CN107747126A - A kind of monocrystalline silicon is without alcohol flocking additive, Woolen-making liquid and its application method - Google Patents
A kind of monocrystalline silicon is without alcohol flocking additive, Woolen-making liquid and its application method Download PDFInfo
- Publication number
- CN107747126A CN107747126A CN201711067432.4A CN201711067432A CN107747126A CN 107747126 A CN107747126 A CN 107747126A CN 201711067432 A CN201711067432 A CN 201711067432A CN 107747126 A CN107747126 A CN 107747126A
- Authority
- CN
- China
- Prior art keywords
- woolen
- additive
- monocrystalline silicon
- making liquid
- making
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007788 liquid Substances 0.000 title claims abstract description 26
- 239000000654 additive Substances 0.000 title claims abstract description 21
- 230000000996 additive effect Effects 0.000 title claims abstract description 21
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 19
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 title claims abstract description 9
- 235000008216 herbs Nutrition 0.000 claims abstract description 18
- 210000002268 wool Anatomy 0.000 claims abstract description 18
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229920000881 Modified starch Polymers 0.000 claims abstract description 12
- 239000004368 Modified starch Substances 0.000 claims abstract description 12
- 235000019426 modified starch Nutrition 0.000 claims abstract description 12
- 229920001495 poly(sodium acrylate) polymer Polymers 0.000 claims abstract description 10
- NNMHYFLPFNGQFZ-UHFFFAOYSA-M sodium polyacrylate Chemical compound [Na+].[O-]C(=O)C=C NNMHYFLPFNGQFZ-UHFFFAOYSA-M 0.000 claims abstract description 10
- 239000000203 mixture Substances 0.000 claims abstract description 8
- 239000004310 lactic acid Substances 0.000 claims abstract description 7
- 235000014655 lactic acid Nutrition 0.000 claims abstract description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 30
- 239000004094 surface-active agent Substances 0.000 claims description 7
- 229910052911 sodium silicate Inorganic materials 0.000 claims description 6
- 229920002472 Starch Polymers 0.000 claims description 5
- 239000008107 starch Substances 0.000 claims description 5
- 235000019698 starch Nutrition 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 5
- 239000003945 anionic surfactant Substances 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- -1 wherein Substances 0.000 claims description 3
- 239000004115 Sodium Silicate Substances 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- 210000000481 breast Anatomy 0.000 claims description 2
- 235000019795 sodium metasilicate Nutrition 0.000 claims description 2
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 2
- 238000002310 reflectometry Methods 0.000 abstract description 5
- 239000002904 solvent Substances 0.000 abstract description 5
- 230000036632 reaction speed Effects 0.000 abstract description 3
- 231100000331 toxic Toxicity 0.000 abstract description 3
- 230000002588 toxic effect Effects 0.000 abstract description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 229910020489 SiO3 Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 239000002671 adjuvant Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- ZXVOCOLRQJZVBW-UHFFFAOYSA-N azane;ethanol Chemical compound N.CCO ZXVOCOLRQJZVBW-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229910000406 trisodium phosphate Inorganic materials 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Treatments For Attaching Organic Compounds To Fibrous Goods (AREA)
Abstract
It is as follows without alcohol flocking additive, Woolen-making liquid and its application method, weight accounting of each composition of the additive in Woolen-making liquid the invention discloses a kind of monocrystalline silicon：Sodium Polyacrylate 0.6 2.4 ‰, modified starch 0.01 0.02 ‰, lactic acid 0.2 0.4 ‰, when to battery monocrystalline silicon wafer making herbs into wool, it additive disclosed by the invention is added into Woolen-making liquid.Flocking additive provided by the invention, have the advantages that reaction speed is fast, the reflectivity without volatile toxic solvent, product is low, pyramid is evenly distributed, reproducible.
Description
Technical field
Present invention relates particularly to a kind of monocrystalline silicon without alcohol flocking additive, belong to manufacturing battery technical field, the present invention
Another object be to provide the application method of this additive and its Woolen-making liquid.
Background technology
In the matte manufacturing process of monocrystaline silicon solar cell, it is to show in process most that chemical attack is carried out to its surface
Widespread practice, by preparing the surface with pyramid structure, it is produced secondary reflection to light and be remarkably improved photoelectricity
Conversion efficiency.
Existing process for etching is mainly following system：(1) based on NaOH, Isopropanol Solvent, to improve textured surfaces
Uniformity, it can be typically added to a small amount of Na2SiO3, but the isopropanol in corrosive liquid have it is volatile, poisonous, costly the defects of,
Such as China Patent Publication No. CN101962811A；(2) corrosive liquid without alcohols such as isopropanols, with ethanol ammonium, surfactant
Isopropanol is substituted for corrosion solution additive, but organic amine substance be present in this system, it is unfriendly to environment, while product is anti-
It is also higher to penetrate rate, such as China Patent Publication No. CN102312294A；(3) without alcohol system Woolen-making liquid, Na is used2CO3Solution and
Na3PO4Solution etc. without alcohol system as making herbs into wool reaction solution, but these systems still have repeatability it is bad, product reflectivity is not
Such as the shortcomings of NaOH, Isopropanol Solvent.
The present invention is namely based on this thinking, using NaOH and Na2SiO3For base fluid, no alcohol flocking additive is added, preparation
Woolen-making liquid has that reaction speed is fast, the reflectivity without volatile toxic solvent, product is low, pyramid is evenly distributed, repeatability
The advantages that good.
The content of the invention
The present invention is in order to overcome the weak point in existing background technology, the invention provides a kind of monocrystalline silicon without alcohol system
Suede additive, Woolen-making liquid and its application method.
To achieve the above object, the present invention provides following technical scheme：
Without alcohol flocking additive, the additive includes Sodium Polyacrylate, modified starch and lactic acid to a kind of monocrystalline silicon；
Wherein, it is as follows to account for Woolen-making liquid mass ratio for each composition of the additive：
Sodium Polyacrylate 0.6-2.4 ‰
Modified starch 0.01-0.02 ‰
Lactic acid 0.2-0.4 ‰.
Preferably, described modified starch is by starch and surfactant ultrasonic 20-30min in ultrasonic wave, and m
(starch)：M (surfactant) value is 10:0.1-0.2, wherein, surfactant is anion surfactant.
A kind of Woolen-making liquid for Monocrystalline silicon cell piece making herbs into wool, it is formulated by following steps:
1) sodium hydroxide is dissolved in deionized water, then adds sodium metasilicate, stirred, obtain additive-free Woolen-making liquid,
Wherein, NaOH weight/mass percentage compositions are 1-3%；Na2SiO3Weight/mass percentage composition is 0.6-3%；
2) above-mentioned additive is added in Woolen-making liquid, stirring and dissolving is well mixed, and obtains no alcohol Woolen-making liquid.
A kind of method of Monocrystalline silicon cell piece making herbs into wool, comprises the following steps:Battery monocrystalline silicon wafer is immersed in above-mentioned system
Making herbs into wool is carried out in suede liquid, at 80-90 DEG C of temperature, making herbs into wool 10-20min.
Compared with prior art, the beneficial effects of the invention are as follows：
1. in the present invention use alkaline base fluid in addition by Sodium Polyacrylate, modified starch, lactic acid be mixed with without alcohol
The technology of flocking additive, obtaining Woolen-making liquid has that reaction speed is fast, the reflectivity without volatile toxic solvent, product
The advantages that low, pyramid is evenly distributed, is reproducible.
Embodiment
With reference to specific embodiment, the present invention is described in further detail, to make those skilled in the art's reference say
Bright book word can be implemented according to this.
Embodiment 1
It is 10 by mass ratio:1.5 starch and anion surfactant is placed in Ultrasound Instrument, under power 200W, is surpassed
Sound 25min, obtains modified starch, then takes appropriate NaOH to be dissolved in deionized water, and stirring and dissolving is prepared into NaOH mass percentages
Content is 2% solution, then adds Na into the NaOH solution of preparation2SiO3, stirring and dissolving, the Na of addition2SiO3In solution
In weight/mass percentage composition be 3%, then by following weight than add adjuvant, Sodium Polyacrylate 1.2 ‰, above-mentioned modified starch
0.02‰；Lactic acid 0.4 ‰；Stirring and dissolving, it is well mixed, obtains no alcohol Woolen-making liquid.Battery monocrystalline silicon wafer is immersed in above-mentioned nothing
Making herbs into wool is carried out in alcohol Woolen-making liquid, at 90 DEG C of temperature, making herbs into wool 10min.
Embodiment 2
The preparation method of the present embodiment is with embodiment 1, the difference is that Sodium Polyacrylate 0.6 ‰, modified starch 0.01 ‰, breast
Acid 0.2 ‰.
Embodiment 3
The preparation method of the present embodiment is with embodiment 1, the difference is that Sodium Polyacrylate 2.4 ‰.
The scanned Electronic Speculum detection pyramid matte size of monocrystalline silicon piece is 2-4 μm and size after making herbs into wool obtained by embodiment 1-3
Uniformly, there is no space between adjacent pyramid, in 700-900nm wave band internal reflection rates below 11%.
Monocrystalline silicon piece qualification rate and the performance test results are as follows after making herbs into wool obtained by embodiment 1-3：Each embodiment uses 500
Individual battery monocrystalline silicon wafer is tested, each 5 groups of experiment point, every group 100, is as a result gained of averaging, embodiment 1-3 systems
More additive-free excellent of performance after suede, the performance of integrated embodiment 1 is more excellent.
| Performance indications | Additive-free contrast | Embodiment 1 | Embodiment 2 | Embodiment 3 |
| Qualification rate | 92.11% | 99.23% | 97.36% | 96.32% |
| Reflectivity | 13.50% | 10.2% | 10.6% | 10.9% |
| Open-circuit voltage (V) | 0.631 | 0.628 | 0.631 | 0.629 |
| Open-circuit current (A) | 5.62 | 5.61 | 5.66 | 5.63 |
Sodium Polyacrylate plays regulation OH in system-With the effect of Si reaction rates, the increase of polyacrylic acid na concn
Make OH-It is more prone to be diffused into silicon chip surface participation reaction, improves making herbs into wool speed, the lactic acid of addition can adsorb the table in silicon
Face, increase raising effect is played, nucleation density is improved, initial reaction stage is formed pyramidal increasing number, pyramid size subtracts
It is small, lower the etching extent of silicon, reduce the making herbs into wool time, the addition of modified starch, prevent from producing hickie during making herbs into wool, make making herbs into wool
Effect it is more preferable.
Although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
A variety of changes, modification can be carried out to these embodiments, replace without departing from the principles and spirit of the present invention by understanding
And modification, the scope of the present invention is by appended claims and its is equal.
Claims (4)
1. a kind of monocrystalline silicon is without alcohol flocking additive, it is characterised in that：The additive includes Sodium Polyacrylate, modified starch and breast
Acid；
Wherein, it is as follows to account for Woolen-making liquid mass ratio for each composition of the additive：
Sodium Polyacrylate 0.6-2.4 ‰
Modified starch 0.01-0.02 ‰
Lactic acid 0.2-0.4 ‰.
2. a kind of monocrystalline silicon according to claim 1 is without alcohol flocking additive, it is characterised in that：Described modified starch is
By starch and surfactant ultrasonic 20-30min in ultrasonic wave, and m (starch)：M (surfactant) value is 10:0.1-
0.2, wherein, surfactant is anion surfactant.
3. a kind of Woolen-making liquid for Monocrystalline silicon cell piece making herbs into wool, it is characterised in that be formulated by following steps:
1) sodium hydroxide is dissolved in deionized water, then adds sodium metasilicate, stirred, obtain additive-free Woolen-making liquid, wherein,
NaOH weight/mass percentage compositions are 1-3%；Na2SiO3Weight/mass percentage composition is 0.6-3%；
2) any one additive in claim 1-2 is added in Woolen-making liquid, stirring and dissolving is well mixed, and obtains no alcohol system
Suede liquid.
A kind of 4. method of Monocrystalline silicon cell piece making herbs into wool, it is characterised in that comprise the following steps:Battery monocrystalline silicon wafer is immersed in
Making herbs into wool is carried out in the Woolen-making liquid of claim 3, at 80-90 DEG C of temperature, making herbs into wool 10-20min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711067432.4A CN107747126A (en) | 2017-11-03 | 2017-11-03 | A kind of monocrystalline silicon is without alcohol flocking additive, Woolen-making liquid and its application method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711067432.4A CN107747126A (en) | 2017-11-03 | 2017-11-03 | A kind of monocrystalline silicon is without alcohol flocking additive, Woolen-making liquid and its application method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107747126A true CN107747126A (en) | 2018-03-02 |
Family
ID=61253471
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711067432.4A Pending CN107747126A (en) | 2017-11-03 | 2017-11-03 | A kind of monocrystalline silicon is without alcohol flocking additive, Woolen-making liquid and its application method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107747126A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110528086A (en) * | 2019-08-31 | 2019-12-03 | 绍兴拓邦电子科技有限公司 | Flocking additive and its etching method for silicon heterogenous solar battery |
| CN110644056A (en) * | 2019-10-12 | 2020-01-03 | 湖南理工学院 | Formula of composite texturing solution additive for preparing fine and dense pyramid monocrystalline silicon textured surface |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102337596A (en) * | 2011-04-19 | 2012-02-01 | 上海晶太光伏科技有限公司 | Monocrystalline silicon solar cell alkali texturing assistant agent and its application |
| CN103510160A (en) * | 2012-06-29 | 2014-01-15 | 上海汉遥新材料科技有限公司 | Monocrystalline silicon system flocking additive for crystalline silicon solar battery |
| EP2891637A1 (en) * | 2013-09-04 | 2015-07-08 | Changzhou Shichuang Energy Technology Co., Ltd. | Monocrystalline silicon wafer texturizing additive and use thereof |
| CN105177719A (en) * | 2015-08-25 | 2015-12-23 | 安徽飞阳能源科技有限公司 | Environment-friendly high-efficient silicon chip texturing agent and preparation method thereof |
-
2017
- 2017-11-03 CN CN201711067432.4A patent/CN107747126A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102337596A (en) * | 2011-04-19 | 2012-02-01 | 上海晶太光伏科技有限公司 | Monocrystalline silicon solar cell alkali texturing assistant agent and its application |
| CN103510160A (en) * | 2012-06-29 | 2014-01-15 | 上海汉遥新材料科技有限公司 | Monocrystalline silicon system flocking additive for crystalline silicon solar battery |
| EP2891637A1 (en) * | 2013-09-04 | 2015-07-08 | Changzhou Shichuang Energy Technology Co., Ltd. | Monocrystalline silicon wafer texturizing additive and use thereof |
| CN105177719A (en) * | 2015-08-25 | 2015-12-23 | 安徽飞阳能源科技有限公司 | Environment-friendly high-efficient silicon chip texturing agent and preparation method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110528086A (en) * | 2019-08-31 | 2019-12-03 | 绍兴拓邦电子科技有限公司 | Flocking additive and its etching method for silicon heterogenous solar battery |
| CN110644056A (en) * | 2019-10-12 | 2020-01-03 | 湖南理工学院 | Formula of composite texturing solution additive for preparing fine and dense pyramid monocrystalline silicon textured surface |
| CN110644056B (en) * | 2019-10-12 | 2022-06-24 | 湖南理工学院 | Formula of composite texturing solution additive for preparing fine and dense pyramid monocrystalline silicon textured surface |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102181935B (en) | Method and corrosive liquid for making texture surface of monocrystalline silicon | |
| CN110042474A (en) | A kind of monocrystaline silicon solar cell flocking additive and its application | |
| CN104562011B (en) | The texturing assistant agent and process for etching of polysilicon chip | |
| CN112309849A (en) | Method for etching and polishing single surface of silicon wafer | |
| CN112226819A (en) | Texturing additive suitable for thin monocrystalline silicon wafer and application | |
| CN107747126A (en) | A kind of monocrystalline silicon is without alcohol flocking additive, Woolen-making liquid and its application method | |
| CN114182356A (en) | Low-reflectivity monocrystalline silicon wafer texturing additive, preparation method and application thereof | |
| CN113668067A (en) | Additive for alkali polishing of monocrystalline silicon piece and application thereof | |
| WO2022083362A1 (en) | Texturing additive, texturing solution, and application suitable for large-size monocrystalline silicon wafer | |
| CN107287597A (en) | Wool-making agent of monocrystalline silicon surface processing and preparation method thereof and application method | |
| CN102337596B (en) | Monocrystalline silicon solar cell alkali texturing assistant agent and its application | |
| CN103981575B (en) | Annealing and wool-making method for monocrystalline silicon wafer | |
| CN110205035A (en) | A kind of additive and its application, application method | |
| CN111394797A (en) | Preparation method of additive with positive pyramid structure for N-type monocrystalline silicon | |
| CN105977343A (en) | Monocrystalline silicon solar cell surface texture liquid having high stability and tannin extract and preparation method thereof | |
| CN113136255A (en) | Cooling liquid for diamond wire cutting solar silicon wafer and preparation method | |
| CN109762646A (en) | A kind of aqueous aluminium antirust agent and preparation method thereof | |
| KR20150109704A (en) | Texture etching solution composition and texture etching method of crystalline silicon wafers | |
| CN114959910A (en) | Efficient monocrystalline silicon solar cell texturing additive solution and application | |
| CN111117623A (en) | Acidic etching auxiliary agent and preparation method thereof | |
| CN115216301B (en) | Texturing solution for monocrystalline silicon and texturing method | |
| CN102191565B (en) | Monocrystalline silicon etching solution and application method thereof | |
| CN116790253A (en) | Alcohol-free monocrystalline silicon stable velvet additive, preparation method and application thereof | |
| CN116005270A (en) | Monocrystalline silicon slice texturing additive with better morphology and monocrystalline silicon slice texturing method | |
| CN116004233A (en) | Etching additive for improving uniformity of textured surface of silicon wafer and use method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180302 |