CN110528086A - Flocking additive and its etching method for silicon heterogenous solar battery - Google Patents
Flocking additive and its etching method for silicon heterogenous solar battery Download PDFInfo
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- CN110528086A CN110528086A CN201910819928.5A CN201910819928A CN110528086A CN 110528086 A CN110528086 A CN 110528086A CN 201910819928 A CN201910819928 A CN 201910819928A CN 110528086 A CN110528086 A CN 110528086A
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- Prior art keywords
- solar battery
- silicon
- flocking additive
- etching method
- silicon heterogenous
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 56
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 56
- 239000010703 silicon Substances 0.000 title claims abstract description 56
- 239000000654 additive Substances 0.000 title claims abstract description 45
- 230000000996 additive effect Effects 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 15
- 238000005530 etching Methods 0.000 title claims abstract description 13
- 210000002268 wool Anatomy 0.000 claims abstract description 25
- 239000008367 deionised water Substances 0.000 claims abstract description 21
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 14
- 239000001866 hydroxypropyl methyl cellulose Substances 0.000 claims abstract description 12
- 229920003088 hydroxypropyl methyl cellulose Polymers 0.000 claims abstract description 12
- 235000010979 hydroxypropyl methyl cellulose Nutrition 0.000 claims abstract description 12
- UFVKGYZPFZQRLF-UHFFFAOYSA-N hydroxypropyl methyl cellulose Chemical compound OC1C(O)C(OC)OC(CO)C1OC1C(O)C(O)C(OC2C(C(O)C(OC3C(C(O)C(O)C(CO)O3)O)C(CO)O2)O)C(CO)O1 UFVKGYZPFZQRLF-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229920001495 poly(sodium acrylate) polymer Polymers 0.000 claims abstract description 8
- NNMHYFLPFNGQFZ-UHFFFAOYSA-M sodium polyacrylate Chemical compound [Na+].[O-]C(=O)C=C NNMHYFLPFNGQFZ-UHFFFAOYSA-M 0.000 claims abstract description 8
- 239000007788 liquid Substances 0.000 claims description 33
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 30
- 235000008216 herbs Nutrition 0.000 claims description 21
- 239000012670 alkaline solution Substances 0.000 claims description 11
- 230000035484 reaction time Effects 0.000 claims description 10
- 238000005496 tempering Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000000243 solution Substances 0.000 claims description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 2
- 239000007864 aqueous solution Substances 0.000 claims description 2
- 150000007529 inorganic bases Chemical class 0.000 claims description 2
- 150000007530 organic bases Chemical class 0.000 claims description 2
- 230000003252 repetitive effect Effects 0.000 claims description 2
- 239000011435 rock Substances 0.000 claims description 2
- 238000004090 dissolution Methods 0.000 description 8
- 239000003795 chemical substances by application Substances 0.000 description 6
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 5
- 229920002125 Sokalan® Polymers 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 239000004584 polyacrylic acid Substances 0.000 description 5
- 229910052708 sodium Inorganic materials 0.000 description 5
- 239000011734 sodium Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 208000007578 phototoxic dermatitis Diseases 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- -1 hydroxypropyl methyl Chemical group 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention provides the flocking additives and its etching method of a kind of silicon heterogenous solar battery, the feed components of flocking additive content by mass percentage are as follows: hydroxypropyl methyl cellulose 0.05%~2%, Sodium Polyacrylate 0.01%~10%, neopelex 0.01%~2%, surplus are deionized water.Additive of the invention is added in wool making solution for monocrystalline silicon pieces, can obtain pyramid of the more uniform and size at 3~8 μm, is conducive to the open-circuit voltage and electric current that improve silicon heterogenous battery, to promote battery efficiency.
Description
Technical field
The invention belongs to manufacture of solar cells technical fields, are related to a kind of making herbs into wool for silicon heterogenous solar battery
Additive and its etching method.
Background technique
Silicon based hetero-junction solar battery is as emerging high performance solar batteries technology, with conventional solar cell phase
Than there are many advantages such as high conversion efficiency, good temp characteristic, technological temperature be low, therefore silicon based hetero-junction solar battery has
There is good development prospect.
The key technology core of heterojunction solar battery is the passivation of crystalline silicon substrate and amorphous silicon interface, high quality
Passivation layer effectively can inhibit carrier in the compound of silicon face, while improve minority carrier life time, to improve photoelectric conversion efficiency.It passes
The crystal silicon solar batteries of system have the silicon nitride passivation of 80 nano thickness, and silicon based hetero-junction solar battery is noncrystal
Silicon passivation layer thickness only has 5~10 nanometers.Therefore, the uniform deposition of non-crystalline silicon thin-film is with regard to particularly significant.
The pyramidal uniformity of the making herbs into wool of surface of crystalline silicon and pyramidal size are deposited with significantly amorphous silicon membrane
Influence, too small pyramid since its bottom curvature radius is smaller, amorphous silicon membrane be difficult to have here uniform deposition and by
In the effect of stress, it is easy to produce micro-crack, passivation effect is caused to be deteriorated.Therefore, increasing pyramidal size can be effective
Improve the open-circuit voltage of silicon heterogenous battery, and good pyramid uniformity, sunken photosensitiveness can be improved, promote silicon heterogenous electricity
The electric current in pond, to improve the incident photon-to-electron conversion efficiency of silicon heterogenous solar battery.
The pyramid size of traditional silicon wafer flocking additive generally only has 1~3 μm, and pyramid is not uniform enough, reflectivity
It is higher, it is not able to satisfy the demand of silicon heterogenous manufacture of solar cells and development.Therefore, a pyramid is bigger and more equal
Even flocking additive is then particularly significant for the development of silicon heterogenous solar battery.
Summary of the invention
The purpose of the present invention is there is the above problem in view of the prior art, a kind of silicon heterogenous solar battery is provided
Flocking additive and its etching method, additive of the invention is added in wool making solution for monocrystalline silicon pieces, can obtain more
Pyramid of the even and size at 3~8 μm is conducive to the open-circuit voltage and electric current that improve silicon heterogenous battery, to promote battery
Efficiency.
Object of the invention can be realized by the following technical scheme: the making herbs into wool for silicon heterogenous solar battery is added
Agent, which is characterized in that
Feed components content by mass percentage are as follows:
Hydroxypropyl methyl cellulose 0.05%~2%,
Sodium Polyacrylate 0.01%~10%,
Neopelex 0.01%~2%,
Surplus is deionized water.
The present invention also provides a kind of etching methods for silicon heterogenous solar battery, which is characterized in that the making herbs into wool side
Method includes the following steps:
One, flocking additive is prepared: the hydroxypropyl methyl cellulose for being 0.05%~2% by mass percent, 0.01%
~10% Sodium Polyacrylate, 0.01%~2% neopelex, is added in the deionized water of surplus, mixing
Uniformly it is made into flocking additive；
Two, prepare alkaline solution: flocking additive is poured into No.1 tempering tank, alkaline solution is poured into No. two and is mixed
It closes in bucket, the percent by volume of flocking additive and alkaline solution is 0.25~5:100；
Three, it prepares Woolen-making liquid: flocking additive is divided into 3~6 equal portions, it is molten that a flocking additive is first poured into alkalinity
In liquid, rock No. two tempering tanks to solution it is uniform after, then pour into second part, repetitive operation until whole flocking additives are finished down,
It is configured to Woolen-making liquid；
Four, making herbs into wool: monocrystalline silicon piece being immersed in Woolen-making liquid and carries out surface wool manufacturing, forms positive golden word in monocrystalline silicon sheet surface
Tower flannelette.
Further, the alkaline solution is the sodium hydroxide or potassium hydroxide solution of concentration 0.5%~10%.
Further, the alkaline solution is the aqueous solution of inorganic base or organic base.
Further, the temperature of the Woolen-making liquid is 70~85 DEG C.
Further, the reaction time is 500s~1500s.
Compared with prior art, this for silicon heterogenous solar battery flocking additive and its etching method have with
Lower advantage:
1. pyramid of the more uniform and size at 3~8 μm can be obtained, be conducive to the open circuit for improving silicon heterogenous battery
Voltage and current, to promote battery efficiency.
2. the open-circuit voltage of silicon heterogenous battery can effectively be improved by increasing pyramidal size, and good pyramid
Sunken photosensitiveness can be improved in uniformity.
Detailed description of the invention
Fig. 1 is the pyramidal SEM front view of silicon wafer obtained in embodiment 1.
Fig. 2 is the pyramidal SEM top view of silicon wafer obtained in embodiment 1.
Specific embodiment
Following is a specific embodiment of the present invention in conjunction with the accompanying drawings, technical scheme of the present invention will be further described,
However, the present invention is not limited to these examples.
Embodiment 1
As shown in Figure 1 and Figure 2, the flocking additive for configuring silicon heterogenous solar battery, by 1g hydroxypropyl methyl fiber
Element, 0.5g Sodium Polyacrylate, 0.5g neopelex mixed dissolution obtain the silicon heterogenous sun into 1L deionized water
The flocking additive of energy battery.The flocking additive of 2000g sodium hydroxide, the silicon heterogenous solar battery of 1L is added to 160L
In deionized water, Woolen-making liquid is obtained.Woolen-making liquid temperature is risen to 80 ° DEG C, monocrystalline silicon piece is then immersed into Woolen-making liquid making herbs into wool, reaction
Time is 900s, and gained pyramid pedestal size is 3~8 μm.
Embodiment 2
The flocking additive for configuring silicon heterogenous solar battery, by 2g hydroxypropyl methyl cellulose, 1g Sodium Polyacrylate,
1g neopelex mixed dissolution obtains the flocking additive of silicon heterogenous solar battery into 1L deionized water.
The flocking additive of 2500g sodium hydroxide, the silicon heterogenous solar battery of 1L is added in 160L deionized water, making herbs into wool is obtained
Liquid.Woolen-making liquid temperature is risen to 80 ° DEG C, monocrystalline silicon piece is then immersed into Woolen-making liquid making herbs into wool, reaction time 1200s, gained gold
Word tower base size is 3~8 μm.
Embodiment 3
The flocking additive for configuring silicon heterogenous solar battery, by 1g hydroxypropyl methyl cellulose, 50g polyacrylic acid
Sodium, 5g neopelex mixed dissolution obtain the making herbs into wool addition of silicon heterogenous solar battery into 1L deionized water
Agent.The flocking additive of 1500g sodium hydroxide, the silicon heterogenous solar battery of 1L is added in 160L deionized water, is obtained
Woolen-making liquid.Woolen-making liquid temperature is risen to 84 ° DEG C, monocrystalline silicon piece is then immersed into Woolen-making liquid making herbs into wool, reaction time 600s, gained
Pyramid pedestal size is 3~8 μm.
Embodiment 4
The flocking additive for configuring silicon heterogenous solar battery, by 2g hydroxypropyl methyl cellulose, 10g polyacrylic acid
Sodium, 1g neopelex mixed dissolution obtain the making herbs into wool addition of silicon heterogenous solar battery into 1L deionized water
Agent.The flocking additive of 1000g sodium hydroxide, the silicon heterogenous solar battery of 1L is added in 160L deionized water, is obtained
Woolen-making liquid.Woolen-making liquid temperature is risen to 78 ° DEG C, monocrystalline silicon piece is then immersed into Woolen-making liquid making herbs into wool, reaction time 1500s, institute
Obtaining pyramid pedestal size is 3~8 μm.
Embodiment 5
The flocking additive for configuring silicon heterogenous solar battery, by 1g hydroxypropyl methyl cellulose, 1g Sodium Polyacrylate,
1g neopelex mixed dissolution obtains the flocking additive of silicon heterogenous solar battery into 1L deionized water.
The flocking additive of 2500g sodium hydroxide, the silicon heterogenous solar battery of 1L is added in 160L deionized water, making herbs into wool is obtained
Liquid.Woolen-making liquid temperature is risen to 82 ° DEG C, monocrystalline silicon piece is then immersed into Woolen-making liquid making herbs into wool, reaction time 1000s, gained gold
Word tower base size is 3~8 μm.
Embodiment 6
The flocking additive for configuring silicon heterogenous solar battery, by 10g hydroxypropyl methyl cellulose, 5g polyacrylic acid
Sodium, 1g neopelex mixed dissolution obtain the making herbs into wool addition of silicon heterogenous solar battery into 1L deionized water
Agent.The flocking additive of 2500g sodium hydroxide, the silicon heterogenous solar battery of 1L is added in 160L deionized water, is obtained
Woolen-making liquid.Woolen-making liquid temperature is risen to 82 ° DEG C, monocrystalline silicon piece is then immersed into Woolen-making liquid making herbs into wool, reaction time 1000s, institute
Obtaining pyramid pedestal size is 3~8 μm.
Embodiment 7
The flocking additive for configuring silicon heterogenous solar battery, by 10g hydroxypropyl methyl cellulose, 10g polyacrylic acid
Sodium, 10g neopelex mixed dissolution obtain the making herbs into wool addition of silicon heterogenous solar battery into 1L deionized water
Agent.The flocking additive of 2500g sodium hydroxide, the silicon heterogenous solar battery of 1L is added in 160L deionized water, is obtained
Woolen-making liquid.Woolen-making liquid temperature is risen to 82 ° DEG C, monocrystalline silicon piece is then immersed into Woolen-making liquid making herbs into wool, reaction time 1000s, institute
Obtaining pyramid pedestal size is 3~8 μm.
Embodiment 8
The flocking additive for configuring silicon heterogenous solar battery, by 5g hydroxypropyl methyl cellulose, 80g polyacrylic acid
Sodium, 1g neopelex mixed dissolution obtain the making herbs into wool addition of silicon heterogenous solar battery into 1L deionized water
Agent.The flocking additive of 2500g sodium hydroxide, the silicon heterogenous solar battery of 1L is added in 160L deionized water, is obtained
Woolen-making liquid.Woolen-making liquid temperature is risen to 82 ° DEG C, monocrystalline silicon piece is then immersed into Woolen-making liquid making herbs into wool, reaction time 1000s, institute
Obtaining pyramid pedestal size is 3~8 μm.
Claims (6)
1. being used for the flocking additive of silicon heterogenous solar battery, which is characterized in that
Feed components content by mass percentage are as follows:
Hydroxypropyl methyl cellulose 0.05%~2%,
Sodium Polyacrylate 0.01%~10%,
Neopelex 0.01%~2%,
Surplus is deionized water.
2. a kind of etching method for silicon heterogenous solar battery, which is characterized in that the etching method includes the following steps:
One, flocking additive is prepared: the hydroxypropyl methyl cellulose for being 0.05%~2% by mass percent, 0.01%~
10% Sodium Polyacrylate, 0.01%~2% neopelex, is added in the deionized water of surplus, and mixing is equal
It is even to be made into flocking additive；
Two, prepare alkaline solution: flocking additive being poured into No.1 tempering tank, alkaline solution is poured into No. two tempering tanks
Interior, the percent by volume of flocking additive and alkaline solution is 0.25~5:100；
Three, it prepares Woolen-making liquid: flocking additive being divided into 3~6 equal portions, a flocking additive is first poured into alkaline solution
In, rock No. two tempering tanks to solution it is uniform after, then pour into second part, repetitive operation is matched until whole flocking additives are finished down
It is set to Woolen-making liquid；
Four, making herbs into wool: monocrystalline silicon piece being immersed in Woolen-making liquid and carries out surface wool manufacturing, forms positive pyramid suede in monocrystalline silicon sheet surface
Face.
3. a kind of etching method for silicon heterogenous solar battery according to claim 2, which is characterized in that described
Alkaline solution be concentration 0.5%~10% sodium hydroxide or potassium hydroxide solution.
4. a kind of etching method for silicon heterogenous solar battery according to claim 2, which is characterized in that described
Alkaline solution is the aqueous solution of inorganic base or organic base.
5. a kind of etching method for silicon heterogenous solar battery according to claim 2, which is characterized in that described
Woolen-making liquid temperature be 70~85 DEG C.
6. a kind of etching method for silicon heterogenous solar battery according to claim 2, which is characterized in that reaction
Time is 500s~1500s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910819928.5A CN110528086A (en) | 2019-08-31 | 2019-08-31 | Flocking additive and its etching method for silicon heterogenous solar battery |
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|---|---|---|---|
| CN201910819928.5A CN110528086A (en) | 2019-08-31 | 2019-08-31 | Flocking additive and its etching method for silicon heterogenous solar battery |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111354840A (en) * | 2020-04-22 | 2020-06-30 | 一道新能源科技(衢州)有限公司 | Preparation method of selective emitter double-sided PERC solar cell |
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| CN102115915A (en) * | 2010-12-31 | 2011-07-06 | 百力达太阳能股份有限公司 | Single crystal silicon texture-making additive and single crystal silicon texture-making technology |
| WO2015032153A1 (en) * | 2013-09-04 | 2015-03-12 | 常州时创能源科技有限公司 | Monocrystalline silicon wafer texturizing additive and use thereof |
| CN107747126A (en) * | 2017-11-03 | 2018-03-02 | 通威太阳能（安徽）有限公司 | A kind of monocrystalline silicon is without alcohol flocking additive, Woolen-making liquid and its application method |
-
2019
- 2019-08-31 CN CN201910819928.5A patent/CN110528086A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102115915A (en) * | 2010-12-31 | 2011-07-06 | 百力达太阳能股份有限公司 | Single crystal silicon texture-making additive and single crystal silicon texture-making technology |
| WO2015032153A1 (en) * | 2013-09-04 | 2015-03-12 | 常州时创能源科技有限公司 | Monocrystalline silicon wafer texturizing additive and use thereof |
| CN107747126A (en) * | 2017-11-03 | 2018-03-02 | 通威太阳能（安徽）有限公司 | A kind of monocrystalline silicon is without alcohol flocking additive, Woolen-making liquid and its application method |
Non-Patent Citations (2)
| Title |
|---|
| 汪多仁: "《现代高分子材料生产及应用手册》", 31 May 2002, 中国石化出版社 * |
| 王元良等: "《太阳能材料器件及其在工业交通中的应用》", 30 June 2013, 西南交通大学出版社 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111354840A (en) * | 2020-04-22 | 2020-06-30 | 一道新能源科技(衢州)有限公司 | Preparation method of selective emitter double-sided PERC solar cell |
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Application publication date: 20191203 |