CN111394797A - Preparation method of additive with positive pyramid structure for N-type monocrystalline silicon - Google Patents
Preparation method of additive with positive pyramid structure for N-type monocrystalline silicon Download PDFInfo
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- CN111394797A CN111394797A CN202010449785.6A CN202010449785A CN111394797A CN 111394797 A CN111394797 A CN 111394797A CN 202010449785 A CN202010449785 A CN 202010449785A CN 111394797 A CN111394797 A CN 111394797A
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- suede
- monocrystalline silicon
- sodium
- additive
- pyramid structure
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 48
- 239000000654 additive Substances 0.000 title claims abstract description 27
- 230000000996 additive effect Effects 0.000 title claims abstract description 22
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- HJJPJSXJAXAIPN-UHFFFAOYSA-N arecoline Chemical compound COC(=O)C1=CCCN(C)C1 HJJPJSXJAXAIPN-UHFFFAOYSA-N 0.000 claims abstract description 26
- 238000006243 chemical reaction Methods 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000002518 antifoaming agent Substances 0.000 claims abstract description 17
- 238000002310 reflectometry Methods 0.000 claims abstract description 16
- 239000002667 nucleating agent Substances 0.000 claims abstract description 14
- 229920001661 Chitosan Polymers 0.000 claims abstract description 13
- 229920002125 Sokalan® Polymers 0.000 claims abstract description 13
- 125000002057 carboxymethyl group Chemical group [H]OC(=O)C([H])([H])[*] 0.000 claims abstract description 13
- RQFQJYYMBWVMQG-IXDPLRRUSA-N chitotriose Chemical compound O[C@@H]1[C@@H](N)[C@H](O)O[C@H](CO)[C@H]1O[C@H]1[C@H](N)[C@@H](O)[C@H](O[C@H]2[C@@H]([C@@H](O)[C@H](O)[C@@H](CO)O2)N)[C@@H](CO)O1 RQFQJYYMBWVMQG-IXDPLRRUSA-N 0.000 claims abstract description 13
- 239000000284 extract Substances 0.000 claims abstract description 13
- 239000004584 polyacrylic acid Substances 0.000 claims abstract description 13
- 229920005552 sodium lignosulfonate Polymers 0.000 claims abstract description 13
- 239000004372 Polyvinyl alcohol Substances 0.000 claims abstract description 12
- DPXJVFZANSGRMM-UHFFFAOYSA-N acetic acid;2,3,4,5,6-pentahydroxyhexanal;sodium Chemical compound [Na].CC(O)=O.OCC(O)C(O)C(O)C(O)C=O DPXJVFZANSGRMM-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000872 buffer Substances 0.000 claims abstract description 12
- 239000001768 carboxy methyl cellulose Substances 0.000 claims abstract description 12
- 229920002451 polyvinyl alcohol Polymers 0.000 claims abstract description 12
- 235000019812 sodium carboxymethyl cellulose Nutrition 0.000 claims abstract description 12
- 229920001027 sodium carboxymethylcellulose Polymers 0.000 claims abstract description 12
- 239000001509 sodium citrate Substances 0.000 claims abstract description 12
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 6
- 230000003750 conditioning effect Effects 0.000 claims abstract description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 48
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 35
- 239000008367 deionised water Substances 0.000 claims description 30
- 229910021641 deionized water Inorganic materials 0.000 claims description 30
- 239000000243 solution Substances 0.000 claims description 26
- 238000010438 heat treatment Methods 0.000 claims description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 10
- 238000005498 polishing Methods 0.000 claims description 10
- 238000005406 washing Methods 0.000 claims description 10
- 238000002156 mixing Methods 0.000 claims description 9
- 239000011259 mixed solution Substances 0.000 claims description 6
- CDBYLPFSWZWCQE-UHFFFAOYSA-L sodium carbonate Substances [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 5
- 238000000861 blow drying Methods 0.000 claims description 5
- 239000012295 chemical reaction liquid Substances 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- 239000003814 drug Substances 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000011734 sodium Substances 0.000 claims description 5
- 229910052708 sodium Inorganic materials 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- 238000001914 filtration Methods 0.000 claims description 4
- -1 polysiloxane Polymers 0.000 claims description 4
- 229920001296 polysiloxane Polymers 0.000 claims description 4
- 238000010992 reflux Methods 0.000 claims description 4
- PYODKQIVQIVELM-UHFFFAOYSA-M sodium;2,3-bis(2-methylpropyl)naphthalene-1-sulfonate Chemical compound [Na+].C1=CC=C2C(S([O-])(=O)=O)=C(CC(C)C)C(CC(C)C)=CC2=C1 PYODKQIVQIVELM-UHFFFAOYSA-M 0.000 claims description 4
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 claims description 3
- 239000004354 Hydroxyethyl cellulose Substances 0.000 claims description 3
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 claims description 3
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 2
- 239000006172 buffering agent Substances 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 11
- 238000005299 abrasion Methods 0.000 abstract description 7
- 230000009471 action Effects 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 238000010248 power generation Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000013530 defoamer Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Silicon Compounds (AREA)
Abstract
The invention relates to the technical field of solar cells, and discloses a preparation method of an additive with a positive pyramid structure for N-type monocrystalline silicon, wherein the component concentration of each part of the additive is as follows: suede nucleating agent: 0.5-1%; defoaming agent: 2% -3%; suede conditioning agent: 5 to 6 percent; suede buffer 2-3%; wherein: the suede nucleating agent comprises sodium lignosulfonate and polyvinyl alcohol; the defoaming agent comprises polyacrylic acid and sodium carboxymethyl cellulose; the suede regulator comprises carboxymethyl chitosan and chitosan oligosaccharide; the suede buffer comprises arecoline extract and sodium citrate; the invention provides a pyramid structure texturing method for N-type monocrystalline silicon, wherein a pyramid textured surface with the diameter of 1-3 microns is textured on the surface of an N-type silicon wafer, edges and the top of a pyramid are smooth structures, the reflectivity is as low as 10-11%, the efficiency loss caused by abrasion of the pyramid structure by a subsequent process can be effectively reduced, and the conversion efficiency of an HIT battery is further improved.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a preparation method of an additive with a positive pyramid structure for N-type monocrystalline silicon.
Background
The crystalline silicon heterojunction solar cell (HIT) is formed by depositing an amorphous silicon film on N-type crystalline silicon, integrates the advantages of crystalline silicon cells and film cells, and has the advantages of simple structure, low process temperature, good passivation effect, high open-circuit voltage, good temperature characteristic, double-sided power generation and the like. Compared with a conventional crystalline silicon battery and a current mainstream P-type single crystal PERC battery, the HIT battery has the advantages of high efficiency, no light attenuation, low temperature coefficient, high weak light response and the like, and the most obvious characteristic brought by the advantages is that the HIT battery has higher power generation capacity.
The texturing of the prior HIT battery is to weave a regular pyramid texture surface on the surface by using an anisotropic reaction under the action of an additive and by using an aqueous solution of KOH or NaOH, wherein the reflectivity is 11-13%. However, the tip of the pyramid is too sharp, and charge recombination caused by abrasion and collapse easily occurs in subsequent process treatment, so that the conversion efficiency of the battery is influenced. The invention provides a pyramid structure texturing method for N-type monocrystalline silicon, wherein a pyramid textured surface with the diameter of 1-3 microns is textured on the surface of an N-type silicon wafer, edges and the top of a pyramid are smooth structures, the reflectivity is as low as 10-11%, the efficiency loss caused by abrasion of the pyramid structure by a subsequent process can be effectively reduced, and the conversion efficiency of an HIT battery is further improved.
Disclosure of Invention
The invention aims to provide a preparation method of an additive for a positive pyramid structure of N-type monocrystalline silicon, wherein a pyramid suede with the diameter of 1-3 microns is textured on the surface of an N-type silicon wafer, edges and the top of a pyramid are all smooth structures, the reflectivity is as low as 10-11%, the efficiency loss caused by abrasion of a subsequent process to the pyramid structure can be effectively reduced, the conversion efficiency of an HIT battery is further improved, and the problems that the existing pyramid suede is too sharp at the top and is easy to generate charge recombination caused by abrasion and collapse in subsequent process treatment, and the conversion efficiency of the battery is influenced are solved.
In order to achieve the purpose, the invention provides the following technical scheme: a preparation method of an additive with a positive pyramid structure for N-type monocrystalline silicon comprises the following steps:
suede nucleating agent: 0.5-1%;
defoaming agent: 2% -3%;
suede conditioning agent: 5 to 6 percent;
suede buffer 2-3%;
wherein: the suede nucleating agent comprises sodium lignosulfonate and polyvinyl alcohol; the defoaming agent comprises polyacrylic acid and sodium carboxymethyl cellulose; the suede regulator comprises carboxymethyl chitosan and chitosan oligosaccharide; the suede buffer comprises arecoline extract and sodium citrate;
s1 preparation of additives:
adding 5g of sodium lignosulfonate, 3g of polyvinyl alcohol, 20g of sodium carboxymethylcellulose, 10g of polyacrylic acid, 50g of chitosan oligosaccharide and 5g of carboxymethyl chitosan into 1L of deionized water, adding 8g of arecoline extract and 15g of sodium citrate, uniformly mixing, heating and refluxing the mixed solution at the temperature of 70 ℃ for 12 hours, cooling, and filtering to obtain the additive with the pyramid structure for the N-type monocrystalline silicon.
S2 preparing reaction liquid medicine:
the initial polishing solution was prepared by adding 80g NaOH to 8L g of deionized water and heating to 75 ℃.
The pretreatment solution was prepared by adding 40g NaOH and 300ml hydrogen peroxide to 8L g deionized water, and heating to 70 ℃.
The texturing solution was prepared by adding 200g NaOH and 40ml S1 to 8L g deionized water, and heating to 82 deg.C.
S3, texturing:
and (3) placing an N-type monocrystalline silicon wafer with the size of 158mm by 158mm into the primary polishing solution S2 for standing reaction for 3 minutes, taking out the monocrystalline silicon wafer, washing the surface with deionized water, placing the monocrystalline silicon wafer into the pretreatment solution S2 for standing reaction for 2 minutes, taking out the monocrystalline silicon wafer, washing the surface with deionized water, placing the monocrystalline silicon wafer into the texturing liquid S2, and standing reaction for 8 minutes. Taking out, cleaning with pure water, and blow-drying with a nitrogen gun.
Test S4:
and (5) carrying out reflectivity test and scanning electron microscope observation on the silicon wafer prepared in the step S3. As a result, the reflectivity is 10.23%, the size of the suede pyramids is uniform, the arrangement is compact, the size is 1-3 microns, and the lateral edges and the top of the pyramids are smooth.
Preferably, the suede nucleating agent is mainly formed by mixing one or more of sodium lignosulfonate, sodium diisobutylnaphthalenesulfonate, single-branched-chain C10 sodium alcohol sulfate and polyvinyl alcohol.
Preferably, the defoaming agent mainly comprises one or more of polyacrylic acid, polysiloxane defoaming agent, sodium carboxymethyl cellulose and sodium hydroxyethyl cellulose.
Preferably, the suede conditioner is composed of one or a mixture of carboxymethyl chitosan and chitosan oligosaccharide.
Preferably, the suede buffering agent is composed of one or two of arecoline extract, sodium citrate and sodium carbonate.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a pyramid structure texturing method for N-type monocrystalline silicon, wherein a pyramid textured surface with the diameter of 1-3 microns is textured on the surface of an N-type silicon wafer, edges and the top of a pyramid are smooth structures, the reflectivity is as low as 10-11%, the efficiency loss caused by abrasion of the pyramid structure by a subsequent process can be effectively reduced, and the conversion efficiency of an HIT battery is further improved.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The first embodiment is as follows:
a preparation method of an additive with a positive pyramid structure for N-type monocrystalline silicon comprises the following steps:
suede nucleating agent: 0.5-1%;
defoaming agent: 2% -3%;
suede conditioning agent: 5 to 6 percent;
suede buffer 2-3%;
wherein: the suede nucleating agent comprises sodium lignosulfonate and polyvinyl alcohol; the defoaming agent comprises polyacrylic acid and sodium carboxymethyl cellulose; the suede regulator comprises carboxymethyl chitosan and chitosan oligosaccharide; the suede buffer comprises arecoline extract and sodium citrate;
s1 preparation of additives:
adding 5g of sodium lignosulfonate, 3g of polyvinyl alcohol, 20g of sodium carboxymethylcellulose, 10g of polyacrylic acid, 50g of chitosan oligosaccharide and 5g of carboxymethyl chitosan into 1L of deionized water, adding 8g of arecoline extract and 15g of sodium citrate, uniformly mixing, heating and refluxing the mixed solution at the temperature of 70 ℃ for 12 hours, cooling, and filtering to obtain the additive with the pyramid structure for the N-type monocrystalline silicon.
S2 preparing reaction liquid medicine:
the initial polishing solution was prepared by adding 80g NaOH to 8L g of deionized water and heating to 75 ℃.
The pretreatment solution was prepared by adding 40g NaOH and 300ml hydrogen peroxide to 8L g deionized water, and heating to 70 ℃.
The texturing solution was prepared by adding 200g NaOH and 40ml S1 to 8L g deionized water, and heating to 82 deg.C.
S3, texturing:
and (3) placing an N-type monocrystalline silicon wafer with the size of 158mm by 158mm into the primary polishing solution S2 for standing reaction for 3 minutes, taking out the monocrystalline silicon wafer, washing the surface with deionized water, placing the monocrystalline silicon wafer into the pretreatment solution S2 for standing reaction for 2 minutes, taking out the monocrystalline silicon wafer, washing the surface with deionized water, placing the monocrystalline silicon wafer into the texturing liquid S2, and standing reaction for 8 minutes. Taking out, cleaning with pure water, and blow-drying with a nitrogen gun.
Test S4:
and (5) carrying out reflectivity test and scanning electron microscope observation on the silicon wafer prepared in the step S3. As a result, the reflectivity is 10.23%, the size of the suede pyramids is uniform, the arrangement is compact, the size is 1-3 microns, and the lateral edges and the top of the pyramids are smooth.
Example two:
a preparation method of an additive with a positive pyramid structure for N-type monocrystalline silicon comprises the following steps:
suede nucleating agent: 0.5-1%;
defoaming agent: 2% -3%;
suede conditioning agent: 5 to 6 percent;
suede buffer 2-3%;
wherein: the suede nucleating agent comprises sodium lignosulfonate and polyvinyl alcohol; the defoaming agent comprises polyacrylic acid and sodium carboxymethyl cellulose; the suede regulator comprises carboxymethyl chitosan and chitosan oligosaccharide; the suede buffer comprises arecoline extract and sodium citrate;
s1 preparation of additives:
adding 7g of sodium lignosulfonate, 1g of polyvinyl alcohol, 2g of sodium diisobutylnaphthalenesulfonate, 15g of sodium carboxymethylcellulose, 2g of polysiloxane defoamer, 5g of polyacrylic acid, 50g of chitosan oligosaccharide and 5g of carboxymethyl chitosan into 1L of deionized water, adding 10g of arecoline extract and 10g of sodium carbonate, uniformly mixing, heating and refluxing the mixed solution at the temperature of 70 ℃ for 12 hours, cooling, and filtering to obtain the additive with the pyramid structure for the N-type monocrystalline silicon.
S2 preparing reaction liquid medicine:
the initial polishing solution was prepared by adding 80g NaOH to 8L g of deionized water and heating to 75 ℃.
The pretreatment solution was prepared by adding 40g NaOH and 300ml hydrogen peroxide to 8L g deionized water, and heating to 70 ℃.
The texturing solution was prepared by adding 200g NaOH and 40ml S1 to 8L g deionized water, and heating to 82 deg.C.
S3, texturing:
and (3) placing an N-type monocrystalline silicon wafer with the size of 158mm by 158mm into the primary polishing solution S2 for standing reaction for 3 minutes, taking out the monocrystalline silicon wafer, washing the surface with deionized water, placing the monocrystalline silicon wafer into the pretreatment solution S2 for standing reaction for 2 minutes, taking out the monocrystalline silicon wafer, washing the surface with deionized water, placing the monocrystalline silicon wafer into the texturing liquid S2, and standing reaction for 8 minutes. Taking out, cleaning with pure water, and blow-drying with a nitrogen gun.
Test S4:
and (5) carrying out reflectivity test and scanning electron microscope observation on the silicon wafer prepared in the step S3. As a result, the reflectivity is 10.78%, the size of the suede pyramid is uniform, the arrangement is compact, the size is 1-2 microns, and the side edges and the top of the pyramid are smooth.
And (3) implementation:
a preparation method of an additive with a positive pyramid structure for N-type monocrystalline silicon comprises the following steps:
suede nucleating agent: 0.5-1%;
defoaming agent: 2% -3%;
suede conditioning agent: 5 to 6 percent;
suede buffer 2-3%;
wherein: the suede nucleating agent comprises sodium lignosulfonate and polyvinyl alcohol; the defoaming agent comprises polyacrylic acid and sodium carboxymethyl cellulose; the suede regulator comprises carboxymethyl chitosan and chitosan oligosaccharide; the suede buffer comprises arecoline extract and sodium citrate;
s1 preparation of additives:
1L deionized water is added with 5g of sodium lignosulfonate, 3g of sodium diisobutylnaphthalenesulfonate, 20g of sodium hydroxyethyl cellulose, 5g of polyacrylic acid, 2g of polysiloxane antifoaming agent, 30g of chitosan oligosaccharide and 25g of carboxymethyl chitosan, 8g of arecoline extract and 15g of sodium citrate are added, the mixed solution is heated and refluxed at 70 ℃ for 12 hours after being uniformly mixed, and the mixed solution is cooled and filtered to prepare the additive with the pyramid structure for the N-type monocrystalline silicon.
S2 preparing reaction liquid medicine:
the initial polishing solution was prepared by adding 80g NaOH to 8L g of deionized water and heating to 75 ℃.
The pretreatment solution was prepared by adding 40g NaOH and 300ml hydrogen peroxide to 8L g deionized water, and heating to 70 ℃.
The texturing solution was prepared by adding 200g NaOH and 40ml S1 to 8L g deionized water, and heating to 82 deg.C.
S3, texturing:
and (3) placing an N-type monocrystalline silicon wafer with the size of 158mm by 158mm into the primary polishing solution S2 for standing reaction for 3 minutes, taking out the monocrystalline silicon wafer, washing the surface with deionized water, placing the monocrystalline silicon wafer into the pretreatment solution S2 for standing reaction for 2 minutes, taking out the monocrystalline silicon wafer, washing the surface with deionized water, placing the monocrystalline silicon wafer into the texturing liquid S2, and standing reaction for 8 minutes. Taking out, cleaning with pure water, and blow-drying with a nitrogen gun.
Test S4:
and (5) carrying out reflectivity test and scanning electron microscope observation on the silicon wafer prepared in the step S3. As a result, the reflectivity is 10.53%, the size of the suede pyramid is uniform, the arrangement is compact, the size is 1-3 microns, and the side edges and the top of the pyramid are smooth.
The invention provides a pyramid structure texturing method for N-type monocrystalline silicon, wherein a pyramid textured surface with the diameter of 1-3 microns is textured on the surface of an N-type silicon wafer, edges and the top of a pyramid are smooth structures, the reflectivity is as low as 10-11%, the efficiency loss caused by abrasion of the pyramid structure by a subsequent process can be effectively reduced, and the conversion efficiency of an HIT battery is further improved.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (5)
1. A preparation method of an additive with a positive pyramid structure for N-type monocrystalline silicon is characterized by comprising the following steps: the component concentration of each part of additive is as follows:
suede nucleating agent: 0.5-1%;
defoaming agent: 2% -3%;
suede conditioning agent: 5 to 6 percent;
suede buffer 2-3%;
wherein: the suede nucleating agent comprises sodium lignosulfonate and polyvinyl alcohol; the defoaming agent comprises polyacrylic acid and sodium carboxymethyl cellulose; the suede regulator comprises carboxymethyl chitosan and chitosan oligosaccharide; the suede buffer comprises arecoline extract and sodium citrate;
s1 preparation of additives:
adding 5g of sodium lignosulfonate, 3g of polyvinyl alcohol, 20g of sodium carboxymethylcellulose, 10g of polyacrylic acid, 50g of chitosan oligosaccharide and 5g of carboxymethyl chitosan into 1L of deionized water, adding 8g of arecoline extract and 15g of sodium citrate, uniformly mixing, heating and refluxing the mixed solution at the temperature of 70 ℃ for 12 hours, cooling, and filtering to obtain the additive with the pyramid structure for the N-type monocrystalline silicon.
S2 preparing reaction liquid medicine:
the initial polishing solution was prepared by adding 80g NaOH to 8L g of deionized water and heating to 75 ℃.
The pretreatment solution was prepared by adding 40g NaOH and 300ml hydrogen peroxide to 8L g deionized water, and heating to 70 ℃.
The texturing solution was prepared by adding 200g NaOH and 40ml S1 to 8L g deionized water, and heating to 82 deg.C.
S3, texturing:
and (3) placing an N-type monocrystalline silicon wafer with the size of 158mm by 158mm into the primary polishing solution S2 for standing reaction for 3 minutes, taking out the monocrystalline silicon wafer, washing the surface with deionized water, placing the monocrystalline silicon wafer into the pretreatment solution S2 for standing reaction for 2 minutes, taking out the monocrystalline silicon wafer, washing the surface with deionized water, placing the monocrystalline silicon wafer into the texturing liquid S2, and standing reaction for 8 minutes. Taking out, cleaning with pure water, and blow-drying with a nitrogen gun.
Test S4:
and (5) carrying out reflectivity test and scanning electron microscope observation on the silicon wafer prepared in the step S3. As a result, the reflectivity is 10.23%, the size of the suede pyramids is uniform, the arrangement is compact, the size is 1-3 microns, and the lateral edges and the top of the pyramids are smooth.
2. The method for preparing the additive with the positive pyramid structure for N-type monocrystalline silicon, as claimed in claim 1, wherein: the suede nucleating agent is mainly formed by mixing one or more of sodium lignosulphonate, sodium diisobutylnaphthalenesulfonate, single-branched-chain C10 sodium alcohol sulfate and polyvinyl alcohol.
3. The method for preparing the additive with the positive pyramid structure for N-type monocrystalline silicon, as claimed in claim 1, wherein: the defoaming agent is mainly formed by mixing one or more of polyacrylic acid, polysiloxane defoaming agent, sodium carboxymethylcellulose and sodium hydroxyethyl cellulose.
4. The method for preparing the additive with the positive pyramid structure for N-type monocrystalline silicon, as claimed in claim 1, wherein: the suede regulator is formed by mixing one or both of carboxymethyl chitosan and chitosan oligosaccharide.
5. The method for preparing the additive with the positive pyramid structure for N-type monocrystalline silicon, as claimed in claim 1, wherein: the suede buffering agent is prepared by mixing one or two of arecoline extract, sodium citrate and sodium carbonate.
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| CN114351257A (en) * | 2021-12-15 | 2022-04-15 | 嘉兴市小辰光伏科技有限公司 | Additive for rapid texturing of HIT solar cell and texturing process |
| CN115820256A (en) * | 2022-11-25 | 2023-03-21 | 嘉兴市小辰光伏科技有限公司 | Additive for improving uniformity of texture of solar cell and application process thereof |
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