CN110578176A - texture surface making accelerant for single-crystal high-dense-grid solar cell with small texture surface and using method of texture surface making accelerant - Google Patents
texture surface making accelerant for single-crystal high-dense-grid solar cell with small texture surface and using method of texture surface making accelerant Download PDFInfo
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a texturing accelerator for a single-crystal high-dense-grid solar cell with a small textured surface and a using method thereof, aiming at overcoming the defects in the prior art and providing the texturing accelerator for the single-crystal high-dense-grid solar cell with the small textured surface, wherein the accelerator comprises the following components in percentage by weight: 0.8-4.5% of n-butyl orthoacetate, 1-4% of vitamin A, 0.5-4% of vitamin C and 0.5-6% of lactic acid, adding an accelerant into a monocrystalline texturing tank containing a mixed solution of alkali and ethanol, controlling the temperature of the texturing tank at 80 ℃, uniformly stirring, and immersing the monocrystalline silicon piece into the texturing tank for reaction. The pyramid size of the light trapping structure formed by the solar cell texturing of the monocrystalline silicon is stabilized within the range of 1.2-1.5um, so that the formation of a shallow pn junction of the monocrystalline high-square-resistance grid solar cell is facilitated, the surface recombination rate after diffusion is reduced, dead layers are reduced, the optical path of incident light is increased, the luminous flux is increased, and the short-circuit current and the photoelectric conversion efficiency of the monocrystalline solar cell are improved.
Description
Technical Field
the invention relates to the technical field of crystalline silicon solar cells, in particular to a texturing accelerator for a single-crystal high-resistance dense-grid solar cell with a small textured surface and a using method thereof.
Background
With the increase of environmental awareness of people, the traditional polluted fossil energy is gradually disappearing, and people begin to invest a great deal of research in the field of new energy, so that the new energy can replace the traditional fossil energy. With the gradual increase of the electricity consumption of modern large cities, the solar power generation technology with comparative advantages can solve the problem in the field of new energy, and the solar energy has the characteristics of cleanness, safe use and simple conversion and utilization. With the popularization of the photovoltaic flat price internet policy, the first problem to be solved in the solar cell power generation is cost reduction and efficiency improvement, the cost is reduced, meanwhile, the photoelectric conversion efficiency of the cell is continuously improved, and the improvement becomes the focus of research of many scientific research institutions and enterprises at present.
The pyramid structure formed by texturing of the solar cell determines the number of photon-generated carriers excited by incident light, is very important for manufacturing the crystalline silicon cell, and by adding a novel accelerant, a silicon wafer cleaned cleanly is formed into a uniform and stable pyramid, the size of the pyramid is about 1 micrometer, so that high sheet resistance can be matched, a shallow junction solar cell with low surface doping concentration and less recombination can be formed, and then the matching of a small pyramid texture surface and a dense grid structure is favorable for collecting the carriers and reducing contact resistance.
disclosure of Invention
The invention aims to: in order to meet the requirements of reducing cost, improving efficiency and reducing cost in the power generation of a solar cell and continuously improving the photoelectric conversion efficiency of the cell, a novel texturing accelerant is utilized to form a small pyramid which is uniform and stable and has the size of 1-1.5 mu m on the surface of monocrystalline silicon, reduce the reflectivity of incident light in sunlight, increase the optical path of the incident light, facilitate the formation of shallow pn junctions of a monocrystalline high-square-resistance grid solar cell, reduce the surface recombination rate after diffusion, reduce dead layers, improve the short-circuit current and the photoelectric conversion efficiency of the monocrystalline solar cell, reduce the production cost, be compatible with the existing cleaning and texturing equipment, be used for cleaning and texturing a crystalline silicon substrate of the existing perovskite-crystalline silicon laminated cell, be beneficial to the preparation of a perovskite thin film, reduce the size of a texturing pyramid structure and ensure that the texturing pyramids are uniformly and stably distributed, the reflection of incident light is reduced, the utilization rate of light is increased, the efficiency and the short-circuit current of the crystalline silicon solar cell with the single crystal substrate are improved, and the efficiency and the short-circuit current of the cell are improved, so that the method has a great application prospect.
the technical scheme adopted by the invention is as follows:
The texture surface making accelerant for the single crystal high-dense grid solar cell with the small texture surface comprises the following components in percentage by weight: 0.8-4.5% of n-butyl orthoacetate, 0.5-4% of vitamin A1, 0.5-4% of vitamin C and 0.5-6% of lactic acid.
As a further description of the above technical solution:
The use method of the texture surface making accelerant for the single-crystal high-dense-grid solar cell with the small texture surface comprises the following steps:
Step one, adding the accelerant into a single crystal texturing tank containing an alkali and ethanol mixed solution, uniformly stirring, and controlling the temperature at 80 ℃;
Secondly, placing a single wafer into a flower basket, immersing the single wafer into the texturing groove, and reacting, wherein the texturing time is controlled to be 600-800 s;
And step three, washing the single crystal wafer subjected to texturing by using deionized water.
As a further description of the above technical solution:
In the first step, the volume ratio of the accelerator to the mixed solution is 1: 500-1: 800.
As a further description of the above technical solution:
The alkali in the mixed solution is NaOH or KOH, the concentration is 2.5 to 3.2 weight percent, and the ethanol concentration in the mixed solution is 2 to 5 weight percent.
as a further description of the above technical solution:
The accelerant is used for texturing of a single crystal p-type or n-type silicon substrate, and the thickness of a silicon wafer is 150-180 mu m.
As a further description of the above technical solution:
in the third step, the conduction resistance of the deionized water is more than 18M omega.
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:
1. The invention relates to a texture surface making accelerant for a single-crystal high-dense-grid solar cell by utilizing a small textured surface, which comprises the following components in percentage by weight: 0.8-4.5% of n-butyl orthoacetate, 1-4% of vitamin A, 0.5-4% of vitamin C and 0.5-6% of lactic acid, adding an accelerant into a monocrystal texturing tank containing an alkali and ethanol mixed solution, uniformly stirring, controlling the temperature at 80 ℃, putting a monocrystal into a flower basket, immersing the monocrystal into the texturing tank for reaction, controlling the texturing time at 600-800 s, controlling the size range of a textured pyramid to be 1.2-1.5um, wherein the volume ratio of the additive to the mixed solution is 1: 500-1: 800, wherein the alkali in the mixed solution is NaOH or KOH, the concentration is 2.5-3.2 wt%, the ethanol concentration in the mixed solution is 2-5 wt%, the accelerator is used for texturing a monocrystalline p-type or n-type silicon substrate, the thickness of a silicon wafer is 150-180 um, the conduction resistance of the used deionized water is more than 18 MOmega, the weight of the silicon wafer after cleaning and texturing is 0.5-0.65 g, the small textured silicon wafer using the texturing accelerator is matched with the diffused square resistance of 160-180 OMEGA/sq, and the number of fine grid bars of a metallized electrode is 110-120. In order to meet the requirements of reducing cost, improving efficiency and reducing cost in the power generation of a solar cell and continuously improving the photoelectric conversion efficiency of the cell, a novel texturing accelerant is utilized to form a small pyramid which is uniform and stable and has the size of 1-1.5 mu m on the surface of monocrystalline silicon, reduce the reflectivity of incident light in sunlight, increase the optical path of the incident light, facilitate the formation of shallow pn junctions of a monocrystalline high-square-resistance grid solar cell, reduce the surface recombination rate after diffusion, reduce dead layers, improve the short-circuit current and the photoelectric conversion efficiency of the monocrystalline solar cell, reduce the production cost, be compatible with the existing cleaning and texturing equipment, be used for cleaning and texturing a crystalline silicon substrate of the existing perovskite-crystalline silicon laminated cell, be beneficial to the preparation of a perovskite thin film, reduce the size of a texturing pyramid structure and ensure that the texturing pyramids are uniformly and stably distributed, the reflection of incident light is reduced, the utilization rate of light is increased, the efficiency and the short-circuit current of the crystalline silicon solar cell with the single crystal substrate are improved, and the efficiency and the short-circuit current of the cell are improved, so that the method has a great application prospect.
drawings
in order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
FIG. 1 is an SEM image of a textured surface of a single-crystal silicon wafer in example 1;
FIG. 2 is a schematic diagram showing the optical path of incident light in example 1;
FIG. 3 is a graph showing the reflectance of the surface of the single crystal silicon wafer after texturing in example 1.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the detailed description and specific examples, while indicating the preferred embodiment of the invention, are intended for purposes of illustration only and are not intended to limit the scope of the invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
It is noted that relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The features and properties of the present invention are described in further detail below with reference to examples.
Example 1
as shown in the figure, the texture surface making accelerant for the single-crystal high-dense-grid solar cell with the small texture surface comprises the following components in percentage by weight: 0.8-4.5% of n-butyl orthoacetate, 0.5-4% of vitamin A1, 0.5-4% of vitamin C and 0.5-6% of lactic acid.
The use method of the texture surface making accelerant for the single-crystal high-dense-grid solar cell with the small texture surface comprises the following steps:
Step one, adding the accelerant into a single crystal texturing tank containing an alkali and ethanol mixed solution, uniformly stirring, and controlling the temperature at 80 ℃;
secondly, placing a single wafer into a flower basket, immersing the single wafer into the texturing groove, and reacting, wherein the texturing time is controlled to be 600-800 s;
and step three, washing the single crystal wafer subjected to texturing by using deionized water. In the first step, the volume ratio of the accelerator to the mixed solution is 1: 500-1: 800. The alkali in the mixed solution is NaOH or KOH, the concentration is 2.5 to 3.2 weight percent, and the ethanol concentration in the mixed solution is 2 to 5 weight percent. The accelerant is used for texturing of a single crystal p-type or n-type silicon substrate, and the thickness of a silicon wafer is 150-180 mu m. In the third step, the conduction resistance of the deionized water is more than 18M omega.
The working principle of the embodiment is as follows:
With the increase of environmental awareness of people, the traditional polluted fossil energy is gradually disappearing, and people begin to invest a great deal of research in the field of new energy, so that the new energy can replace the traditional fossil energy. With the gradual increase of the electricity consumption of modern large cities, the solar power generation technology with comparative advantages can solve the problem in the field of new energy, and the solar energy has the characteristics of cleanness, safe use and simple conversion and utilization. With the popularization of the photovoltaic flat price internet policy, the first problem to be solved in the solar cell power generation is cost reduction and efficiency improvement, the cost is reduced, meanwhile, the photoelectric conversion efficiency of the cell is continuously improved, and the improvement becomes the focus of research of many scientific research institutions and enterprises at present. The pyramid structure formed by texturing of the solar cell determines the number of photon-generated carriers excited by incident light, is very important for manufacturing the crystalline silicon cell, and by adding a novel accelerant, a silicon wafer cleaned cleanly is formed into a uniform and stable pyramid, the size of the pyramid is about 1 micrometer, so that high sheet resistance can be matched, a shallow junction solar cell with low surface doping concentration and less recombination can be formed, and then the matching of a small pyramid texture surface and a dense grid structure is favorable for collecting the carriers and reducing contact resistance. The texture surface making accelerant for the single crystal high-dense grid solar cell with the small texture surface comprises the following components in percentage by weight: 0.8-4.5% of n-butyl orthoacetate, 1-4% of vitamin A, 0.5-4% of vitamin C and 0.5-6% of lactic acid, adding an accelerant into a monocrystal texturing tank containing an alkali and ethanol mixed solution, uniformly stirring, controlling the temperature at 80 ℃, putting a monocrystal into a flower basket, immersing the monocrystal into the texturing tank for reaction, controlling the texturing time at 600-800 s, controlling the size range of a textured pyramid to be 1.2-1.5um, wherein the volume ratio of the additive to the mixed solution is 1: 500-1: 800, wherein the alkali in the mixed solution is NaOH or KOH, the concentration is 2.5-3.2 wt%, the ethanol concentration in the mixed solution is 2-5 wt%, the accelerator is used for texturing a monocrystalline p-type or n-type silicon substrate, the thickness of a silicon wafer is 150-180 um, the conduction resistance of the used deionized water is more than 18 MOmega, the weight of the silicon wafer after cleaning and texturing is 0.5-0.65 g, the small textured silicon wafer using the texturing accelerator is matched with the diffused square resistance of 160-180 OMEGA/sq, and the number of fine grid bars of a metallized electrode is 110-120. In order to meet the requirements of reducing cost, improving efficiency and reducing cost in the power generation of a solar cell and continuously improving the photoelectric conversion efficiency of the cell, a novel texturing accelerant is utilized to form a small pyramid which is uniform and stable and has the size of 1-1.5 mu m on the surface of monocrystalline silicon, reduce the reflectivity of incident light in sunlight, increase the optical path of the incident light, facilitate the formation of shallow pn junctions of a monocrystalline high-square-resistance grid solar cell, reduce the surface recombination rate after diffusion, reduce dead layers, improve the short-circuit current and the photoelectric conversion efficiency of the monocrystalline solar cell, reduce the production cost, be compatible with the existing cleaning and texturing equipment, be used for cleaning and texturing a crystalline silicon substrate of the existing perovskite-crystalline silicon laminated cell, be beneficial to the preparation of a perovskite thin film, reduce the size of a texturing pyramid structure and ensure that the texturing pyramids are uniformly and stably distributed, the reflection of incident light is reduced, the utilization rate of light is increased, the efficiency and the short-circuit current of the crystalline silicon solar cell with the single crystal substrate are improved, and the efficiency and the short-circuit current of the cell are improved, so that the method has a great application prospect.
Example 2
in this embodiment, the following optimization is performed on the basis of embodiment 1, and the accelerator comprises n-butyl orthoacetate 4%, vitamin a 2.4%, vitamin C3%, lactic acid 6%, and the balance of deionized water. Adding 50mL of accelerator prepared according to the formula into a 100L monocrystal texturing tank, wherein the content of NaOH prepared in the texturing tank is 2.5%, the content of ethanol is 3%, uniformly mixing, controlling the temperature of the texturing tank at 80 ℃, uniformly stirring, soaking the monocrystal silicon wafer into the texturing tank for reaction, and controlling the texturing time at 650s to obtain the pyramid textured surface with the size of 1.2 um. By using the texture surface making accelerant, the size of a texture surface making pyramid structure is reduced, the texture surface making pyramid is uniformly and stably distributed, the reflection of incident light is reduced, the light utilization rate is increased, and the efficiency and the short-circuit current of a battery are improved.
Example 3
In this embodiment, the following optimization is performed on the basis of embodiment 1, and the accelerator comprises n-butyl orthoacetate 4%, vitamin a 2.4%, vitamin C3%, lactic acid 6%, and the balance of deionized water. Adding 50mL of accelerator prepared according to the formula into a 100L monocrystal texturing tank, wherein the prepared NaOH content is 2% and the Isopropanol (IPA) content is 3% in the texturing tank, uniformly mixing, controlling the temperature of the texturing tank at 80 ℃, uniformly stirring, soaking a monocrystal silicon wafer into the texturing tank for reaction, and controlling the texturing time at 700s to obtain the pyramid textured surface with the size of 1.5 um. By using the texture surface making accelerant, the size of a texture surface making pyramid structure is reduced, the texture surface making pyramid is uniformly and stably distributed, the reflection of incident light is reduced, the light utilization rate is increased, and the efficiency and the short-circuit current of a battery are improved.
Example 4
in this embodiment, the following optimization is performed on the basis of embodiment 1, and the accelerator comprises 3.5% of n-butyl orthoacetate, 1% of vitamin a, 4% of vitamin C, 6% of lactic acid, and the balance of deionized water. Adding 50mL of accelerator prepared according to the formula into a 100L monocrystal texturing tank, wherein the content of NaOH prepared in the texturing tank is 2%, the content of ethanol is 2.5%, uniformly mixing, controlling the temperature of the texturing tank at 80 ℃, uniformly stirring, soaking the monocrystal silicon wafer into the texturing tank for reaction, and controlling the texturing time at 800s to obtain the pyramid textured surface with the size of 1 um. By using the texture surface making accelerant, the size of a texture surface making pyramid structure is reduced, the texture surface making pyramid is uniformly and stably distributed, the reflection of incident light is reduced, the light utilization rate is increased, and the efficiency and the short-circuit current of a battery are improved.
example 5
In this embodiment, the following optimization is performed on the basis of embodiment 1, and the accelerator comprises n-butyl orthoacetate 4%, vitamin a 2%, vitamin C4%, lactic acid 1.5%, and the balance of deionized water. Adding 50mL of accelerator prepared according to the formula into a 100L monocrystal texturing tank, wherein the prepared KOH content is 2.5% and the ethanol content is 3%, uniformly mixing, controlling the temperature of the texturing tank at 80 ℃, uniformly stirring, soaking the monocrystal silicon wafer into the texturing tank for reaction, and controlling the texturing time at 600s to obtain the pyramid textured surface with the size of 1 um. By using the texture surface making accelerant, the size of a texture surface making pyramid structure is reduced, the texture surface making pyramid is uniformly and stably distributed, the reflection of incident light is reduced, the light utilization rate is increased, and the efficiency and the short-circuit current of a battery are improved.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principles of the present invention are intended to be included within the scope of the present invention.
Claims (6)
1. the texture surface making accelerant for the single crystal high-dense grid solar cell with the small texture surface is characterized by comprising the following components in percentage by weight: 0.8-4.5% of n-butyl orthoacetate, 0.5-4% of vitamin A1, 0.5-4% of vitamin C and 0.5-6% of lactic acid.
2. The use method of the texture surface making accelerant for the single-crystal high-density grid solar cell with the small textured surface as claimed in claim 1, characterized by comprising the following steps:
Step one, adding the accelerant into a single crystal texturing tank containing an alkali and ethanol mixed solution, uniformly stirring, and controlling the temperature at 80 ℃;
Secondly, placing a single wafer into a flower basket, immersing the single wafer into the texturing groove, and reacting, wherein the texturing time is controlled to be 600-800 s;
and step three, washing the single crystal wafer subjected to texturing by using deionized water.
3. The use method of the texture surface making accelerant for the single-crystal high-density grid solar cell with the small textured surface as claimed in claim 2, is characterized in that: in the first step, the volume ratio of the accelerator to the mixed solution is 1: 500-1: 800.
4. The use method of the texture surface making accelerant for the single-crystal high-density grid solar cell with the small textured surface as claimed in claim 2, is characterized in that: the alkali in the mixed solution is NaOH or KOH, the concentration is 2.5 to 3.2 weight percent, and the ethanol concentration in the mixed solution is 2 to 5 weight percent.
5. The use method of the texture surface making accelerant for the single-crystal high-density grid solar cell with the small textured surface as claimed in claim 2, is characterized in that: the accelerant is used for texturing of a single crystal p-type or n-type silicon substrate, and the thickness of a silicon wafer is 150-180 mu m.
6. The use method of the texture surface making accelerant for the single-crystal high-density grid solar cell with the small textured surface as claimed in claim 2, is characterized in that: in the third step, the conduction resistance of the deionized water is more than 18M omega.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112813502A (en) * | 2020-12-30 | 2021-05-18 | 常州高特新材料股份有限公司 | Monocrystalline silicon etching texturing additive and application thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101851757A (en) * | 2010-06-08 | 2010-10-06 | 常州时创能源科技有限公司 | Additive of wool making solution for monocrystalline silicon pieces and using method |
| CN102337595A (en) * | 2011-04-19 | 2012-02-01 | 上海晶太光伏科技有限公司 | Small-texture monocrystal silicon solar cell texture-manufacturing promoter and application thereof |
| CN102337596A (en) * | 2011-04-19 | 2012-02-01 | 上海晶太光伏科技有限公司 | Monocrystalline silicon solar cell alkali texturing assistant agent and its application |
| CN103510160A (en) * | 2012-06-29 | 2014-01-15 | 上海汉遥新材料科技有限公司 | Monocrystalline silicon system flocking additive for crystalline silicon solar battery |
| CN107858752A (en) * | 2017-11-03 | 2018-03-30 | 通威太阳能（安徽）有限公司 | A kind of crystal silicon Woolen-making liquid and preparation method thereof |
-
2019
- 2019-09-05 CN CN201910835141.8A patent/CN110578176A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101851757A (en) * | 2010-06-08 | 2010-10-06 | 常州时创能源科技有限公司 | Additive of wool making solution for monocrystalline silicon pieces and using method |
| CN102337595A (en) * | 2011-04-19 | 2012-02-01 | 上海晶太光伏科技有限公司 | Small-texture monocrystal silicon solar cell texture-manufacturing promoter and application thereof |
| CN102337596A (en) * | 2011-04-19 | 2012-02-01 | 上海晶太光伏科技有限公司 | Monocrystalline silicon solar cell alkali texturing assistant agent and its application |
| CN103510160A (en) * | 2012-06-29 | 2014-01-15 | 上海汉遥新材料科技有限公司 | Monocrystalline silicon system flocking additive for crystalline silicon solar battery |
| CN107858752A (en) * | 2017-11-03 | 2018-03-30 | 通威太阳能（安徽）有限公司 | A kind of crystal silicon Woolen-making liquid and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112813502A (en) * | 2020-12-30 | 2021-05-18 | 常州高特新材料股份有限公司 | Monocrystalline silicon etching texturing additive and application thereof |
| CN112813502B (en) * | 2020-12-30 | 2022-05-20 | 常州高特新材料股份有限公司 | Monocrystalline silicon etching texturing additive and application thereof |
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