CN101851757A - Additive of wool making solution for monocrystalline silicon pieces and using method - Google Patents
Additive of wool making solution for monocrystalline silicon pieces and using method Download PDFInfo
- Publication number
- CN101851757A CN101851757A CN201010195103A CN201010195103A CN101851757A CN 101851757 A CN101851757 A CN 101851757A CN 201010195103 A CN201010195103 A CN 201010195103A CN 201010195103 A CN201010195103 A CN 201010195103A CN 101851757 A CN101851757 A CN 101851757A
- Authority
- CN
- China
- Prior art keywords
- additive
- making
- wool
- woolen
- making liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention relates to an additive of a wool making solution for monocrystalline silicon pieces, containing the components of lactic acid, vitamin and the balance of water. When the monocrystalline silicon pieces for solar cells are subjected to surface wool making, the additive is added in the alkali wool making solution so that an excellent wool making effect is achieved.
Description
Technical field
The present invention relates to a kind of additive and using method of wool making solution for monocrystalline silicon pieces.
Background technology
In the solar cell piece preparation process, for performance and the efficient that improves solar cell, need make matte at silicon chip surface, effectively suede structure can change the working direction of incident light in silicon so that the incident sunlight carries out multiple reflection and refraction at silicon chip surface.On the one hand, prolonged light path, thereby increased the specific absorption of silicon chip infrared light; On the other hand, make more photon be absorbed the generation photo-generated carrier near near the zone the pn knot, these photo-generated carriers are easier to be collected, and has therefore increased the collection effciency of photo-generated carrier.The matte of monocrystalline silicon battery normally utilizes alkaline corrosion liquid (as KOH, NaOH etc.) that silicon chip surface is corroded and forms.Alkaline corrosion liquid has different erosion rates to the different crystal faces of silicon chip, and is slower to the corrosion of (111) crystal face, very fast to the corrosion of (100) crystal face.Therefore, when utilizing alkaline corrosion liquid that silicon chip is corroded, because this anisotropic corrosive property can form pyramid structure at silicon chip surface.
The making herbs into wool effect is mainly reflected in matte (pyramid) size and uniformity coefficient, the matte that general technology is done (pyramid) is of a size of 6～10 μ m, uniformity coefficient is poor, and the use additive of this patent can make matte (pyramid) size reach 1～3 μ m, size evenness is good, does not have big pyramid.The pyramid size is little to have good effect to the battery subsequent technique.
At present, the Woolen-making liquid of using always in the industrial production is by NaOH, Na
2SiO
4, composition such as Virahol, deionized water.The making herbs into wool effect of this Woolen-making liquid is not very good, and the problem of existence comprises: pyramidal size is bigger, is generally 10～15 μ m; The silicon slice corrosion amount is bigger; Making herbs into wool stability is bad; The silicon chip surface homogeneity is bad after the making herbs into wool, often can see tangible finger-marks, hickie etc.Therefore, if can solve the problems referred to above, will have great importance by in Woolen-making liquid, adding the making herbs into wool additive.
Summary of the invention
The invention provides a kind of additive and using method of wool making solution for monocrystalline silicon pieces, it is characterized in that, when solar cell is carried out surface wool manufacturing with monocrystalline silicon piece, additive of the present invention is joined in the alkaline Woolen-making liquid, reach excellent making herbs into wool effect.
The invention provides a kind of additive that is used for wool making solution for monocrystalline silicon pieces, it is characterized in that the component that wherein comprises is: the water of lactic acid, VITAMIN and surplus, wherein said water is preferably deionized water, and wherein said VITAMIN is a vitamins C.
According to a preferred embodiment of the invention, the volume ratio of lactic acid and water is 1-10 in the additive of the present invention: 100, the weight ratio of VITAMIN and water is 1-3: 100, and the volume ratio of preferred lactic acid and water is 1-5: 100, the weight ratio of VITAMIN and water is 0.1-0.5: 100.
The present invention is provided for the compound method that monocrystalline silicon sheet surface is handled the Wool-making agent of usefulness in addition, comprises
(1) be that the NaOH of 0.5-10% and the Virahol of 3-9% are dissolved in the deionized water with weight percentage, obtain alkaline Woolen-making liquid,
(2) with in the alkaline Woolen-making liquid in the additive adding step of the present invention (1), obtain Wool-making agent, the weight ratio of wherein said additive and Woolen-making liquid is 1-2: 100.
The present invention is used for the compound method that monocrystalline silicon sheet surface is handled the Wool-making agent of usefulness, comprises
(1) be that 1.1% NaOH and 6% Virahol are dissolved in the deionized water with weight percentage, obtain alkaline Woolen-making liquid,
(2) with in the alkaline Woolen-making liquid in the additive adding step of the present invention (1), obtain Wool-making agent, the weight ratio of wherein said additive and Woolen-making liquid is 1-2: 100.
The present invention also provides a kind of fine-hair maring using monocrystalline silicon slice method, and additive of the present invention is added in the alkaline Woolen-making liquid, monocrystalline silicon piece is immersed in carries out making herbs into wool in the Woolen-making liquid that is added with additive then, and during making herbs into wool, temperature is 70-80 ℃, and the making herbs into wool time is 720-900s.The weight ratio of wherein said additive and Woolen-making liquid is 1-2: 100.Described alkaline Woolen-making liquid is by being that the Virahol of the NaOH of 0.5-10% and 3-9% is dissolved in the deionized water and makes with weight percentage, and preferred described alkaline Woolen-making liquid is by being that the Virahol of 1.1% NaOH and 6% is dissolved in the deionized water and makes with weight percentage.
After adopting this additive and using method to carry out silicon chip surface making herbs into wool, the pyramid size that forms at silicon chip surface is less than 5 μ m, the whole complexion of silicon chip pool evenly, average reflectance is lower than 15%, the amount of silicon that is corroded is less than 7%.
The invention has the advantages that: after adopting this additive and using method, compare when not adding additive, can reduce the making herbs into wool temperature, shorten the making herbs into wool time, and the making herbs into wool effect is significantly improved.Matte pyramid size is more tiny, and it is more even to distribute, and has reduced the reflectivity of silicon chip significantly.The battery sheet that finally obtains is also had useful effect, improved the yield rate of battery sheet, promoted the short-circuit current of battery sheet and increased the packing factor of battery sheet, improved the photoelectric transformation efficiency of solar cell piece.In addition, catalyzer nontoxicity of the present invention, non-corrosiveness, nonirritant does not have burning and explosion hazard, and human body and environment are not had harm; And the configuration of catalyzer and use technology are simple, and equipment is cheap, good reproducibility.
Description of drawings
Fig. 1 is the scanning electron microscope plane photo of the silicon chip surface matte that obtains of embodiment 1.
Fig. 2 is the reflection spectrum of the silicon chip surface matte that obtains of embodiment 1.
Embodiment
Embodiment 1
Take following processing step: 1) additive preparation: with the 100ml deionized water is solvent, and 5ml lactic acid, 0.5 gram vitamins C are dissolved in the deionized water; 2) dispose alkaline Woolen-making liquid: 11 gram NaOH and 60 gram Virahols are dissolved in the deionized water, to obtain 1000 gram solution; 3) adding weight percentage in the alkaline Woolen-making liquid of 1000 grams is 20 gram additives; 4) solar cell is immersed in the Woolen-making liquid with monocrystalline silicon piece carry out surface wool manufacturing, the making herbs into wool temperature is 75 ℃, and the making herbs into wool time is 900s.
Fig. 1 has provided the scanning electron microscope plane photo of the silicon chip surface matte that obtains, and the pyramid size of Xing Chenging is less as we can see from the figure, is approximately 2-4 μ m, and it is more even to distribute.Fig. 2 has provided the reflection spectrum of the silicon chip surface matte for preparing, and as we can see from the figure, the reflectivity of the silicon chip surface matte that the present invention obtains is lower, and average reflectance is 9.5%.In addition, the amount of silicon that is corroded is about 5.2%.
Embodiment 2
Take following processing step: 1) additive preparation: with the 100ml deionized water is solvent, and 3ml lactic acid, 0.3 gram vitamins C are dissolved in the deionized water; 2) dispose alkaline Woolen-making liquid: with weight percentage is that 1.1% NaOH and 6% Virahol are dissolved in the deionized water; 3) adding weight percentage in the alkaline Woolen-making liquid of 1000 grams is 15 gram additives; 4) solar cell is immersed in the Woolen-making liquid with monocrystalline silicon piece carry out surface wool manufacturing, the making herbs into wool temperature is 70 ℃, and the making herbs into wool time is 800s.
Embodiment 3
Take following processing step: 1) additive preparation: with the 100ml deionized water is solvent, and 1ml lactic acid, 0.1 gram vitamins C are dissolved in the deionized water; 2) dispose alkaline Woolen-making liquid: with weight percentage is that 1.1% NaOH and 6% Virahol are dissolved in the deionized water; 3) adding weight percentage in the alkaline Woolen-making liquid of 1000 grams is 10 gram additives; 4) solar cell is immersed in the Woolen-making liquid with monocrystalline silicon piece carry out surface wool manufacturing, the making herbs into wool temperature is 80 ℃, and the making herbs into wool time is 720s.
Claims (9)
1. the additive that is used for wool making solution for monocrystalline silicon pieces, it is characterized in that the component that wherein comprises is: the water of lactic acid, VITAMIN and surplus, wherein said water is preferably deionized water.
2. additive according to claim 1, wherein the volume ratio of lactic acid and water is 1-10: 100, the weight ratio of VITAMIN and water is 1-3: 100, the volume ratio of preferred lactic acid and water is 1-5: 100, the weight ratio of VITAMIN and water is 0.1-0.5: 100.
3. additive according to claim 1 and 2, wherein said VITAMIN are vitamins C.
4. one kind is used for the compound method that monocrystalline silicon sheet surface is handled the Wool-making agent of usefulness, comprises
(1) be that the NaOH of 0.5-10% and the Virahol of 3-9% are dissolved in the deionized water with weight percentage, obtain alkaline Woolen-making liquid,
(2) with in the alkaline Woolen-making liquid in the additive adding step (1) any among the claim 1-3, obtain Wool-making agent, the weight ratio of wherein said additive and Woolen-making liquid is 1-2: 100.
5. one kind is used for the compound method that monocrystalline silicon sheet surface is handled the Wool-making agent of usefulness, comprises
(1) be that 1.1% NaOH and 6% Virahol are dissolved in the deionized water with weight percentage, obtain alkaline Woolen-making liquid,
(2) with in the alkaline Woolen-making liquid in the additive adding step (1) any among the claim 1-3, obtain Wool-making agent, the weight ratio of wherein said additive and Woolen-making liquid is 1-2: 100.
6. a fine-hair maring using monocrystalline silicon slice method is characterized in that, additive any among the claim 1-3 is added in the alkaline Woolen-making liquid, then monocrystalline silicon piece is immersed in and carries out making herbs into wool in the Woolen-making liquid that is added with additive, during making herbs into wool, temperature is 70-80 ℃, and the making herbs into wool time is 720-900s.
7. etching method according to claim 6, the weight ratio of wherein said additive and Woolen-making liquid are 1-2: 100.
8. according to the etching method of claim 7, it is characterized in that described alkaline Woolen-making liquid is by being that the Virahol of the NaOH of 0.5-10% and 3-9% is dissolved in the deionized water and makes with weight percentage.
9. according to the etching method of claim 7, it is characterized in that described alkaline Woolen-making liquid is by being that the Virahol of 1.1% NaOH and 6% is dissolved in the deionized water and makes with weight percentage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010195103XA CN101851757B (en) | 2010-06-08 | 2010-06-08 | Additive of wool making solution for monocrystalline silicon pieces and using method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010195103XA CN101851757B (en) | 2010-06-08 | 2010-06-08 | Additive of wool making solution for monocrystalline silicon pieces and using method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101851757A true CN101851757A (en) | 2010-10-06 |
| CN101851757B CN101851757B (en) | 2011-03-23 |
Family
ID=42803431
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010195103XA Active CN101851757B (en) | 2010-06-08 | 2010-06-08 | Additive of wool making solution for monocrystalline silicon pieces and using method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101851757B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102181935A (en) * | 2010-10-26 | 2011-09-14 | 江阴浚鑫科技有限公司 | Method and corrosive liquid for making texture surface of monocrystalline silicon |
| CN102220645A (en) * | 2011-04-30 | 2011-10-19 | 常州天合光能有限公司 | Method for texturing silicon wafer cut by diamond wire |
| CN102569499A (en) * | 2010-12-23 | 2012-07-11 | 无锡尚德太阳能电力有限公司 | Etching system and etching method |
| CN102877135A (en) * | 2012-09-07 | 2013-01-16 | 昆山三峰光伏科技有限公司 | Additive for alkali environment-protecting type no-alcoholic felting liquid of mono-crystal silicone chip and using method thereof |
| CN102995126A (en) * | 2011-09-08 | 2013-03-27 | 昊诚光电（太仓）有限公司 | Monocrystalline silicon cell piece texturing reagent and application method thereof |
| CN103643289A (en) * | 2013-12-03 | 2014-03-19 | 上海交通大学 | Single crystal silicon surface structure based on chemical etching, and preparation and application thereof |
| CN104988581A (en) * | 2015-08-04 | 2015-10-21 | 绍兴拓邦电子科技有限公司 | Monocrystalline silicon piece spraying and texturing additive with high boiling point |
| CN110578176A (en) * | 2019-09-05 | 2019-12-17 | 通威太阳能(眉山)有限公司 | texture surface making accelerant for single-crystal high-dense-grid solar cell with small texture surface and using method of texture surface making accelerant |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101431123A (en) * | 2008-12-10 | 2009-05-13 | 宁波尤利卡太阳能科技发展有限公司 | Texture etching method for single crystalline silicon solar cell |
| KR20090081979A (en) * | 2008-01-25 | 2009-07-29 | 소닉스자펜 주식회사 | Etching composition for manufacturing concavo-convex substrate in monocrystalline silicon photovoltaic devices |
-
2010
- 2010-06-08 CN CN201010195103XA patent/CN101851757B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090081979A (en) * | 2008-01-25 | 2009-07-29 | 소닉스자펜 주식회사 | Etching composition for manufacturing concavo-convex substrate in monocrystalline silicon photovoltaic devices |
| CN101431123A (en) * | 2008-12-10 | 2009-05-13 | 宁波尤利卡太阳能科技发展有限公司 | Texture etching method for single crystalline silicon solar cell |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102181935A (en) * | 2010-10-26 | 2011-09-14 | 江阴浚鑫科技有限公司 | Method and corrosive liquid for making texture surface of monocrystalline silicon |
| CN102181935B (en) * | 2010-10-26 | 2012-09-19 | 浚鑫科技股份有限公司 | Method and corrosive liquid for making texture surface of monocrystalline silicon |
| CN102569499A (en) * | 2010-12-23 | 2012-07-11 | 无锡尚德太阳能电力有限公司 | Etching system and etching method |
| CN102220645A (en) * | 2011-04-30 | 2011-10-19 | 常州天合光能有限公司 | Method for texturing silicon wafer cut by diamond wire |
| CN102220645B (en) * | 2011-04-30 | 2013-01-02 | 常州天合光能有限公司 | Method for texturing silicon wafer cut by diamond wire |
| CN102995126A (en) * | 2011-09-08 | 2013-03-27 | 昊诚光电（太仓）有限公司 | Monocrystalline silicon cell piece texturing reagent and application method thereof |
| CN102877135A (en) * | 2012-09-07 | 2013-01-16 | 昆山三峰光伏科技有限公司 | Additive for alkali environment-protecting type no-alcoholic felting liquid of mono-crystal silicone chip and using method thereof |
| CN102877135B (en) * | 2012-09-07 | 2015-11-25 | 湖州三峰能源科技有限公司 | Monocrystalline silicon piece alkalescence environment-friendly type is without the additive of alcohol Woolen-making liquid and using method thereof |
| CN103643289A (en) * | 2013-12-03 | 2014-03-19 | 上海交通大学 | Single crystal silicon surface structure based on chemical etching, and preparation and application thereof |
| CN103643289B (en) * | 2013-12-03 | 2016-07-06 | 上海交通大学 | The monocrystalline silicon surface structure of chemically based etching and preparation thereof and application |
| CN104988581A (en) * | 2015-08-04 | 2015-10-21 | 绍兴拓邦电子科技有限公司 | Monocrystalline silicon piece spraying and texturing additive with high boiling point |
| CN110578176A (en) * | 2019-09-05 | 2019-12-17 | 通威太阳能(眉山)有限公司 | texture surface making accelerant for single-crystal high-dense-grid solar cell with small texture surface and using method of texture surface making accelerant |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101851757B (en) | 2011-03-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101851757B (en) | Additive of wool making solution for monocrystalline silicon pieces and using method | |
| CN101851756B (en) | Additive of alkali wool making solution for monocrystalline silicon pieces and using method | |
| CN103451739B (en) | Fine-hair maring using monocrystalline silicon slice additive and using method thereof | |
| CN104576831B (en) | A kind of monocrystalline silicon piece is without alcohol process for etching and flocking additive thereof | |
| CN102181935B (en) | Method and corrosive liquid for making texture surface of monocrystalline silicon | |
| CN102912451B (en) | A kind of fine-hair maring using monocrystalline silicon slice additive | |
| CN101937946B (en) | Surface texture method of solar battery silicon slice | |
| CN102877135B (en) | Monocrystalline silicon piece alkalescence environment-friendly type is without the additive of alcohol Woolen-making liquid and using method thereof | |
| CN102330091B (en) | Additive for polycrystalline silicon wafer acidity texture preparation liquid and use method thereof | |
| CN103647000B (en) | A kind of crystal-silicon solar cell Surface Texture metallization processes | |
| EP3047524B1 (en) | Solar cell and method of fabricating solar cells | |
| CN105405755B (en) | For the acid Woolen-making liquid of silicon chip pyramid making herbs into wool, etching method and the silicon chip made of the etching method making herbs into wool | |
| CN104562011A (en) | Texturing auxiliary agent for polycrystalline silicon wafer and texturing process thereof | |
| CN103378212A (en) | Texturing method for solar cell | |
| CN102644121A (en) | Alcohol-free etching liquid for monocrystalline silicon solar cells | |
| CN102337595B (en) | Small-texture monocrystal silicon solar cell texture-manufacturing promoter and application thereof | |
| CN103258918A (en) | Silicon wafer texturing method, solar battery piece and manufacturing method of solar battery piece | |
| CN102330155B (en) | Monocrystalline silicon wafer etching assistant, as well as preparation and using method thereof | |
| CN102912450B (en) | Monocrystalline silicon flocking additive | |
| CN205194713U (en) | A silicon chip for solar cell | |
| CN102747426B (en) | Texture liquid for preparing submicron suede-like monocrystalline silicon wafer and preparation method thereof | |
| CN102646758A (en) | Modification method of mono-crystalline silicon wafer surfaces for solar batteries | |
| CN202189816U (en) | Device for etching surface of solar silicon wafer and structure of solar silicon wafer | |
| CN102403377A (en) | N-type substrate silicon solar cell and production method thereof | |
| CN109273559A (en) | Application of the polishing treatment crystal silicon chip sufacing in solar cell preparation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: Liyang City, Jiangsu province 213300 Li Cheng Zhen Wu Changzhou city Tandu Road No. 8 Patentee after: Changzhou Shichuang Energy Co., Ltd Address before: 902 room 58, 213300 South Street, Jiangsu, Liyang Patentee before: CHANGZHOU SHICHUANG ENERGY TECHNOLOGY Co.,Ltd. |
|
| CP03 | Change of name, title or address |