CN102220645A - Method for texturing silicon wafer cut by diamond wire - Google Patents

Method for texturing silicon wafer cut by diamond wire Download PDF

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Publication number
CN102220645A
CN102220645A CN2011101121851A CN201110112185A CN102220645A CN 102220645 A CN102220645 A CN 102220645A CN 2011101121851 A CN2011101121851 A CN 2011101121851A CN 201110112185 A CN201110112185 A CN 201110112185A CN 102220645 A CN102220645 A CN 102220645A
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silicon chip
silicon wafer
buddha
hno
warrior attendant
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CN102220645B (en
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李毕武
刘振淮
黄振飞
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Trina Solar Co Ltd
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Changzhou Trina Solar Energy Co Ltd
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention belongs to the technical field of the texturing of silicon wafers, and particularly relates to a method for texturing a silicon wafer cut by a diamond wire, which comprises the following steps of: 1, cleaning the silicon wafer cut by the diamond wire; 2, performing acidic corrosion reaction on the cleaned silicon wafer in H2SO4 or H3PO4-HF-HNO3 mixed acidic solution for 30 to 70 seconds, wherein a volume ratio of the H2SO4 or the H3PO4 to the HF to the HNO3 is (2-10):(1-4):(1-4), the concentration of the H2SO4 is 98 percent, the concentration of the HF is 49 percent, the concentration of the HNO3 is 63 percent, and the concentration of the H3PO4 is 85 percent; 3, soaking the silicon wafer which reacts with the acids in alkali texturing liquid, and reacting for 10 to 30 seconds; 4, soaking the silicon wafer which reacts with alkali in HCL-HF solution for 30 to 120 seconds; and 5, drying the reacted silicon wafer, and performing subsequent cell process manufacturing. Compared with the conventional texturing process, the optimized method for texturing the silicon wafer cut by the diamond wire has the advantages that: the reflectivity of the textured silicon wafer is reduced by about 6 percent, and the cell efficiency is improved greatly.

Description

A kind of etching method of Buddha's warrior attendant line cutting silicon chip
Technical field
The invention belongs to silicon chip making herbs into wool technical field, particularly a kind of etching method of Buddha's warrior attendant line cutting silicon chip.
Background technology
Multi-line cutting machine is generally used in the cutting of solar silicon wafers at present, that occupation rate is many on the market is MB, HCT, NTC etc. but because this cutting technique inefficiency, one cutter needs 7～8h, and in cutting, need to use the mixed mortar of SiC and PEG, the emission of serious pollution of environment of its waste mortar of cutting back. at the problems referred to above, developed novel cutting technique at present in the world, the diamond wire cutting, its cutting speed in feet per minute is 2～3 times of ordinary lines cutting, do not need to use SiC in the cutting process, use the water-based cutting fluid of environmentally safe.But because its incision principle difference, cause the surface topography influence of silicon chip also differently, compare with normal mortar cutting silicon chip, the silicon chip surface that the Buddha's warrior attendant line cutting technology obtains is Paint Gloss, and few surface defects as illustrated in fig. 1 and 2.The acid leather producing process is exactly to utilize the defective of silicon chip surface to carry out isotropic etch, thereby reduces the reflectivity of silicon chip, if be HF-HNO by normal silicon chip acid leather producing process 3-H 2O acid leather producing process, the silicon chip that the cutting of Buddha's warrior attendant line obtains can't obtain the ideal matte because surface imperfection is less after the making herbs into wool, and reflectivity is much higher than normal silicon wafer horizontal, its cell conversion efficiency is also lower, makes this novel cutting technique silicon chip can't scale operation.The chemical equation of silicon chip acid leather producing process is: 4HNO 3+ 3Si=SiO 2+ 4NO 2+ 2H 2O (1); SiO 2+ HF=H 2SiF 6+ 2H 2O (2).
Summary of the invention
Technical problem to be solved by this invention is: a kind of etching method that adapts to Buddha's warrior attendant line cutting silicon chip is provided, can improves matte topographic profile after the silicon chip making herbs into wool greatly, reduce the reflectivity of matte, finally improve its battery efficiency.
The technical solution adopted for the present invention to solve the technical problems is: a kind of etching method of Buddha's warrior attendant line cutting silicon chip, and step is as follows:
(1), the silicon chip of Buddha's warrior attendant line cutting cleans;
(2), pass through cleaned silicon chip at H 2SO 4Or H 3PO 4-HF-HNO 3Mixed acid solution in carry out acid corrosion reaction, the volume ratio of various acid is: H 2SO 4Or H 3PO 4: HF: HNO 3=1-10: 1-8: 1-6, wherein, H 2SO 4Concentration expressed in percentage by weight be 98%,, the concentration expressed in percentage by weight of HF is 49%, HNO 3Concentration expressed in percentage by weight be 63%, H 3PO 4Concentration expressed in percentage by weight be 85%, reaction times 30-70s;
(3), silicon chip above-mentioned and that acid-respons is good is immersed in the alkali Woolen-making liquid, the reaction times is at 10s-30s;
(4), the silicon chip that above-mentioned reaction is good carries out washed with de-ionized water;
(5), above-mentioned cleaned silicon chip is immersed in 30s-120s in the HCl-HF solution, clean up with deionized water again;
(6), will react the oven dry of cleaned silicon chip, carry out follow-up battery process again and make.
H 2SO 4Or H 3PO 4-HF-HNO 3Mixed acid solution in the volume ratio of various acid be optimized for: H 2SO 4Or H 3PO 4: HF: HNO 3=2-10: 1-4: 1-4.
The alkali Woolen-making liquid is alkaline dilute solutions such as NaOH or KOH.
The basic innovation of leather producing process method of this Buddha's warrior attendant line cutting silicon chip is: by to the adjustment of silicon slice corrosion acid fluid system material and the optimization of sour ratio; its core is to add to have oxidizing substance sulfuric acid or phosphoric acid; make its Buddha's warrior attendant line cutting silicon chip to make the silicon chip that obtains under the novel cutting technique of this kind can adapt to the battery production processing requirement of mass-producing by obtaining ideal matte topographic profile and lower reflectivity after the acid corrosion.H 2SO 4And H 3PO 4The catalyzer and the buffer reagent that mainly react are controlled speed of reaction, itself do not participate in reaction.
The invention has the beneficial effects as follows: the present invention compares with present leather producing process by the optimization to Buddha's warrior attendant line cutting silicon chip etching method, and the reflectivity after this silicon chip making herbs into wool has been reduced about 6%.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples;
Fig. 1 is the surperficial SEM figure of common steel wire cutting silicon chip;
Fig. 2 is the surperficial SEM figure of the silicon chip of Buddha's warrior attendant line cutting;
Fig. 3 is the matte effect SEM figure that normal silicon chip leather producing process obtains;
The matte effect SEM figure that Fig. 4 is to use silicon chip leather producing process of the present invention to obtain;
Embodiment
A kind of etching method of Buddha's warrior attendant line cutting silicon chip, this production method is as follows:
(1), the silicon chip of Buddha's warrior attendant line cutting carries out thickness and fine purifiation, silicon chip process oven dry, sorting and packing after the cleaning;
(2), pass through cleaned silicon chip at H 2SO 4Or H 3PO 4-HF-HNO 3System is carried out the acid corrosion reaction:
(3), the volume ratio of the acid in the step (two) is: H 2SO 4Or H 3PO 4: HF: HNO 3=2-10: 1-4: 1-4, wherein H 2SO 4Concentration expressed in percentage by weight be 98%,, the concentration expressed in percentage by weight of HF is 49%, HNO 3Concentration expressed in percentage by weight be 63%, H 3PO 4Concentration expressed in percentage by weight be 85%, reaction times 30-70s;
(4), silicon chip above-mentioned and that acid-respons is good is immersed in the 5%NaOH solution reaction times 15s;
(5), above-mentioned and silicon chip alkali reaction are immersed in 60s in the HCl-HF solution, clean up with deionized water again;
(6), will react good silicon chip oven dry, the test reflectivity, the average reflectance of testing under the 400nm-1000nm wave band is 21.1%.
Adopt making herbs into wool of normal silicon chip leather producing process and the comparison of adopting silicon chip leather producing process of the present invention rear surface SEM figure as Fig. 3 and 4 silicon chips by the cutting of Buddha's warrior attendant line, can clearly find out, under normal sour leather producing process, the silicon wafer suede corrosion pit heterogeneity of Buddha's warrior attendant line cutting, the position corrosion pit that silicon chip surface has can not occur, cause the reflectivity of silicon chip higher, battery efficiency is on the low side.Using under the leather producing process of the present invention, silicon wafer suede distributes and compares homogeneous, and corrosion pit is tiny, and reflectivity is low, helps the raising of battery efficiency.
By method of the present invention Buddha's warrior attendant line cutting silicon chip is carried out making herbs into wool and can obtain better matte effect.

Claims (3)

1. the etching method of Buddha's warrior attendant line cutting silicon chip, it is characterized in that: step is as follows:
(1), the silicon chip of Buddha's warrior attendant line cutting cleans;
(2), pass through cleaned silicon chip at H 2SO 4Or H 3PO 4-HF-HNO 3Mixed acid solution in carry out acid corrosion reaction, the volume ratio of various acid is: H 2SO 4Or H 3PO 4: HF: HNO 3=1-10: 1-8: 1-6, wherein, H 2SO 4Concentration expressed in percentage by weight be 98%,, the concentration expressed in percentage by weight of HF is 49%, HNO 3Concentration expressed in percentage by weight be 63%, H 3PO 4Concentration expressed in percentage by weight be 85%, reaction times 30-70s;
(3), silicon chip above-mentioned and that acid-respons is good is immersed in the alkali Woolen-making liquid, the reaction times is at 10s-30s;
(4), the silicon chip that above-mentioned reaction is good carries out washed with de-ionized water;
(5), above-mentioned cleaned silicon chip is immersed in 30s-120s in the HCl-HF solution, clean up with deionized water again;
(6), will react the oven dry of cleaned silicon chip, carry out follow-up battery process again and make.
2. the etching method of Buddha's warrior attendant line cutting silicon chip according to claim 1 is characterized in that: described H 2SO 4Or H 3PO 4-HF-HNO 3Mixed acid solution in the volume ratio of various acid be: H 2SO 4Or H 3PO 4: HF: HNO 3=2-10: 1-4: 1-4.
3. the etching method of Buddha's warrior attendant line cutting silicon chip according to claim 1 is characterized in that: described alkali Woolen-making liquid is NaOH or KOH alkalescence dilute solution.
CN2011101121851A 2011-04-30 2011-04-30 Method for texturing silicon wafer cut by diamond wire Active CN102220645B (en)

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102373474A (en) * 2011-10-31 2012-03-14 合肥晶澳太阳能科技有限公司 Method for recycling wool making/etching solution
CN102560685A (en) * 2012-02-13 2012-07-11 浙江大学 Method of preparing fleece through wet process based on monocrystalline silicon wafer cut by diamond wire
CN103022253A (en) * 2012-12-21 2013-04-03 浙江正泰太阳能科技有限公司 Solar battery and manufacturing method thereof
CN103924305A (en) * 2013-01-14 2014-07-16 东莞市长安东阳光铝业研发有限公司 Making method of quasi-monocrystalline silicon wafer suede
CN104480532A (en) * 2014-12-30 2015-04-01 江西赛维Ldk太阳能高科技有限公司 Texturing preprocessing method of diamond wire cut polycrystalline silicon chip, textured preprocessed silicon chip and application thereof
CN104505437A (en) * 2014-12-30 2015-04-08 江西赛维Ldk太阳能高科技有限公司 Texturing preprocessing solution and method of diamond wire cutting polycrystalline silicon wafer, texturing preprocessing silicon wafer and application of texturing preprocessing silicon wafer
CN106935669A (en) * 2017-05-23 2017-07-07 江苏福吉食品有限公司 A kind of etching method of the diamond wire section black silicon of polycrystalline
CN108615776A (en) * 2018-04-26 2018-10-02 中国科学院物理研究所 Deflection surfaces structure and corresponding preparation method
WO2022016742A1 (en) * 2020-07-22 2022-01-27 宁夏隆基乐叶科技有限公司 Back polishing method of perc battery

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WO2019013706A1 (en) * 2017-07-11 2019-01-17 National University Of Singapore A method of texturing photovoltaic silicon wafers

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CN101851757A (en) * 2010-06-08 2010-10-06 常州时创能源科技有限公司 Additive of wool making solution for monocrystalline silicon pieces and using method
CN101864599A (en) * 2010-05-31 2010-10-20 江西赛维Ldk太阳能高科技有限公司 Preparation method of suede of silicon wafer
CN101876088A (en) * 2010-03-19 2010-11-03 常州亿晶光电科技有限公司 Polycrystalline silicon texturing method
CN101935884A (en) * 2009-07-02 2011-01-05 比亚迪股份有限公司 Method for preparing textured polycrystalline silicon wafer

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CN101752450A (en) * 2008-12-08 2010-06-23 湖南天利恩泽太阳能科技有限公司 Multiplex velvet making method for crystalline silicon solar battery slice
CN101515611A (en) * 2009-03-31 2009-08-26 常州天合光能有限公司 Process for etching solar cells by combining acid and alkali
CN101935884A (en) * 2009-07-02 2011-01-05 比亚迪股份有限公司 Method for preparing textured polycrystalline silicon wafer
CN101634026A (en) * 2009-08-26 2010-01-27 北京市太阳能研究所有限公司 Corrosive liquid for preparing monocrystal silicon textured surface and method thereof
CN101671850A (en) * 2009-09-29 2010-03-17 欧贝黎新能源科技股份有限公司 Mixed phosphate and caustic alkali solution for preparing monocrystal silicon textured surfaces
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CN101805929A (en) * 2010-04-02 2010-08-18 日强光伏科技有限公司 Polycrystalline silicon surface wool manufacturing method
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CN101851757A (en) * 2010-06-08 2010-10-06 常州时创能源科技有限公司 Additive of wool making solution for monocrystalline silicon pieces and using method

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102373474A (en) * 2011-10-31 2012-03-14 合肥晶澳太阳能科技有限公司 Method for recycling wool making/etching solution
CN102560685A (en) * 2012-02-13 2012-07-11 浙江大学 Method of preparing fleece through wet process based on monocrystalline silicon wafer cut by diamond wire
CN102560685B (en) * 2012-02-13 2014-11-05 浙江大学 Method of preparing fleece through wet process based on monocrystalline silicon wafer cut by diamond wire
CN103022253A (en) * 2012-12-21 2013-04-03 浙江正泰太阳能科技有限公司 Solar battery and manufacturing method thereof
CN103022253B (en) * 2012-12-21 2015-11-04 浙江正泰太阳能科技有限公司 A kind of solar cell and preparation method thereof
CN103924305A (en) * 2013-01-14 2014-07-16 东莞市长安东阳光铝业研发有限公司 Making method of quasi-monocrystalline silicon wafer suede
CN104505437A (en) * 2014-12-30 2015-04-08 江西赛维Ldk太阳能高科技有限公司 Texturing preprocessing solution and method of diamond wire cutting polycrystalline silicon wafer, texturing preprocessing silicon wafer and application of texturing preprocessing silicon wafer
CN104480532A (en) * 2014-12-30 2015-04-01 江西赛维Ldk太阳能高科技有限公司 Texturing preprocessing method of diamond wire cut polycrystalline silicon chip, textured preprocessed silicon chip and application thereof
CN104505437B (en) * 2014-12-30 2016-10-05 江西赛维Ldk太阳能高科技有限公司 A kind of diamond wire cutting making herbs into wool pretreatment fluid of polysilicon chip, making herbs into wool preprocess method and making herbs into wool pretreatment silicon chip and application thereof
CN104480532B (en) * 2014-12-30 2017-03-15 江西赛维Ldk太阳能高科技有限公司 A kind of making herbs into wool preprocess method of Buddha's warrior attendant wire cutting polysilicon chip and making herbs into wool pretreatment silicon chip and its application
CN106935669A (en) * 2017-05-23 2017-07-07 江苏福吉食品有限公司 A kind of etching method of the diamond wire section black silicon of polycrystalline
CN108615776A (en) * 2018-04-26 2018-10-02 中国科学院物理研究所 Deflection surfaces structure and corresponding preparation method
WO2022016742A1 (en) * 2020-07-22 2022-01-27 宁夏隆基乐叶科技有限公司 Back polishing method of perc battery

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Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou

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