CN108615776A - Deflection surfaces structure and corresponding preparation method - Google Patents
Deflection surfaces structure and corresponding preparation method Download PDFInfo
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- CN108615776A CN108615776A CN201810384786.XA CN201810384786A CN108615776A CN 108615776 A CN108615776 A CN 108615776A CN 201810384786 A CN201810384786 A CN 201810384786A CN 108615776 A CN108615776 A CN 108615776A
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- inverted pyramid
- deflection surfaces
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- surfaces structure
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- 238000002360 preparation method Methods 0.000 title claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 28
- 239000010703 silicon Substances 0.000 claims description 28
- 239000002253 acid Substances 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 4
- 238000002310 reflectometry Methods 0.000 abstract description 28
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 12
- 239000013078 crystal Substances 0.000 description 12
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 11
- 238000004140 cleaning Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000013528 metallic particle Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Weting (AREA)
Abstract
The present invention provides a kind of deflection surfaces structure, including multiple parallel inverted pyramid chains, wherein two inverted pyramid structure units adjacent to each other are overlapped in each inverted pyramid chain.The ratio that four secondary reflection opticpaths of the deflection surfaces structure account for is higher, substantially reduces the reflectivity of surface texture.
Description
Technical field
The invention belongs to semiconductor photovoltaic fields, and in particular to a kind of deflection surfaces structure and corresponding preparation side
Method.
Background technology
Smooth silicon face can be such that about 30% solar energy is reflected back in air, this seriously constrains sunlight
Producing level, so that the raising of limitation solar battery efficiency.In order to improve the producing level of sunlight, surface prepares micro- knot
Structure and coated with antireflection film both methods are widely used on silica-based solar cell.
Currently, using the anisotropic etching principle of alkali, random positive pyramid structure is prepared on a silicon surface in work
It is widely used in industry.In addition, the regular inverted pyramid structure prepared using technologies such as photoetching often in the lab by with
In the preparation of high performance solar batteries.But both structures are still undesirable to the reflectivity of light, reduce the suction of sunlight
It receives, meanwhile, either positive pyramid or inverted pyramid structure, the big rise and fall of body structure surface are unfavorable for front metal grid line
Preparation be unfavorable for further increasing for solar cell properties to reduce the collection of electric current.
Invention content
Therefore, it is an object of the invention to overcome the defect of the above-mentioned prior art, a kind of deflection surfaces structure is provided, is wrapped
Include multiple parallel inverted pyramid chains, wherein two inverted pyramid structure unit phases adjacent to each other in each inverted pyramid chain
Mutually overlapping.
Deflection surfaces structure according to the present invention, it is preferable that the spacing between the inverted pyramid chain is zero.
Deflection surfaces structure according to the present invention, it is preferable that two inverted pyramid structure units adjacent to each other along
The diagonal of the top surface of the inverted pyramid structure unit is overlapped.
Deflection surfaces structure according to the present invention, it is preferable that the area of overlapping region and single inverted pyramid structure list
The ratio of first top surface area is 0.04 to 0.36.
Deflection surfaces structure according to the present invention, it is preferable that the area of overlapping region and single inverted pyramid structure list
The ratio of first top surface area is 0.16.
Deflection surfaces structure according to the present invention, it is preferable that the top of two inverted pyramid structure units adjacent to each other
The diagonal line overlap in face is mutually parallel.
On the other hand, the present invention also provides a kind of preparation methods of deflection surfaces structure comprising following steps：
Step 1：Silicon chip is obtained using Buddha's warrior attendant line cutting technology；
Step 2：Clean the silicon chip；And
Step 3：Suede structure is prepared on the silicon chip.
The preparation method of deflection surfaces structure according to the present invention, it is preferable that further include to the obtained sample of step 3
The step of product are cleaned.
The preparation method of deflection surfaces structure according to the present invention, it is preferable that in the step 3, by the silicon chip
It is put into acid Woolen-making liquid and prepares suede structure.
Another aspect, the present invention also provides a kind of deflection surfaces structures, use preparation in accordance with the present invention
It prepares.
In another aspect, the present invention also provides a kind of silicon chip, with deflection surfaces structure according to the present invention.
Compared with prior art, the ratio that four secondary reflection opticpaths of deflection surfaces structure of the invention account for is higher,
The reflectivity of surface texture can thus be substantially reduced and improve the electric property that battery is prepared in the silicon chip with the structure,
To improve the efficiency of solar cell.
Description of the drawings
Embodiments of the present invention is further illustrated referring to the drawings, wherein：
Fig. 1 shows four kinds of common opticpaths；
Fig. 2 shows the reflectivity of four kinds of opticpaths in Fig. 1 with the situation of change of wavelength；
Fig. 3 schematically shows the top-level view of two underlapped inverted pyramid structure units and is implemented according to the present invention
The top-level view of two inverted pyramid structure units to overlap each other of example；
Fig. 4 schematically shows the top-level view of inverted pyramid chain according to the ... of the embodiment of the present invention；
Fig. 5 schematically shows the top-level view of regular inverted pyramid structure according to the ... of the embodiment of the present invention；
Fig. 6 shows the stereoscopic schematic diagram of two inverted pyramids splicing；
Fig. 7 shows the reflectivity of different surfaces structure and the relational graph of wavelength；And
Fig. 8 is the scanning electron microscope sem figure of crystal shaped inverted pyramid structure prepared by first embodiment according to the present invention.
Specific implementation mode
In order to make the purpose of the present invention, technical solution and advantage be more clearly understood, pass through below in conjunction with attached drawing specific real
Applying example, the present invention is described in more detail.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention,
It is not intended to limit the present invention.
Sunlight can have different reflection characteristics on different surface textures.According to the reflection law of light, sunlight
Vertical irradiation is to anti-reflection structures surfaces such as the positive pyramid of rule, the inverted pyramid of rule, random positive pyramids, it may appear that
All or part in these four common opticpaths of A, B, C, D as shown in Figure 1.A opticpaths surface reflection twice,
B and C opticpaths surface reflection three times, since the angle of reflection of the third secondary reflection of B opticpaths is very big, third time
The reflectivity of reflection is higher, and D opticpaths are in surface reflection four times.Enter because a light refraction can once be increased by often reflecting
The chance of surface texture, to reduce the reflectivity on surface.
According to the reflection law of light, it can be deduced that the reflectivity of tetra- kinds of opticpaths of A, B, C, D in Fig. 1 shown in Fig. 2
With the situation of change of wavelength, it is apparent that four secondary reflection opticpath D have low-down reflectivity, and it is secondary
Reflection light path A has higher reflectivity, in addition, the reflectivity of triple reflection opticpath B is anti-three times higher than another
The reflectivity of opticpath C is penetrated, this is because the reflectivity of the third secondary reflection of opticpath B is higher than the third of opticpath C
The reflectivity of secondary reflection.Based on this, the present inventor expects designing a kind of surface texture so that sunlight is on the surface texture
In opticpath, two kinds of opticpaths of C, D, the ratio that especially D opticpaths account for is higher, can thus substantially reduce surface knot
The reflectivity of structure, to improve the efficiency of solar cell.
The present invention provides a kind of deflection surfaces structure comprising regular inverted pyramid structure, the golden word of the rule
Tower structure includes multiple inverted pyramid chains parallel to each other, so-called inverted pyramid chain, refer to just multiple inverted pyramid structures each other
The structure formed is connected, in each inverted pyramid chain, adjacent inverted pyramid structure unit is along inverted pyramid structure unit
The diagonal of rectangular top surface overlaps each other.Two underlapped inverted pyramids are schematically shown referring to Fig. 3-Fig. 5, Fig. 3
The top schematic diagram of the top schematic diagram of structural unit and two inverted pyramid structure units to overlap each other according to the present invention；
Fig. 4 schematically shows the top schematic diagram of inverted pyramid chain according to the ... of the embodiment of the present invention；Fig. 5 is schematically shown according to this
The top schematic diagram of the regular inverted pyramid structure of inventive embodiments.Specifically, single inverted pyramid structure unit in Fig. 3 left figures
The length of side of rectangular top surface be 2 μm, in Fig. 3 right figures in two inverted pyramid structure units and Figure 4 and 5 it is two adjacent fall
The region that the rectangular top surface of pyramid structure unit overlaps each other is the square of 0.8 μm of the length of side, therefore, the area of overlapping region
And the ratio of single inverted pyramid structure unit top surface area is 0.16.The depth of each inverted pyramid structure is 1.414 μm.Work as top
When face overlaps each other, longitudinal direction gradually starts to be overlapped with the increase of overlapping region, and underlapped region is also only each other
It is vertical to exist, it can be appreciated that two inverted pyramids have cut away an angle, the structure that latter two right inverted pyramid is stitched together,
The stereoscopic schematic diagram of two inverted pyramids splicing shown in Figure 6.
In order to embody the effect of the present invention, the present inventor calculates the several of the prior art according to maxwell equation group
Surface texture and the reflection case of the surface texture of the present invention and reflectivity and it is compared, 1 is see the table below, in order to simply rise
See, deflection surfaces structure of the invention is referred to as " crystal shaped inverted pyramid structure ".
Table 1
| A | B | C | D | R | |
| The positive pyramid structure of rule | 88.89% | 11.11% | 0% | 0% | 13.926% |
| Random positive pyramid structure | 68.33% | 3.24% | 22.34% | 6.07% | 11.362% |
| Regular inverted pyramid structure | 59.26% | 0.74% | 40% | 0% | 10.727% |
| Crystal shaped inverted pyramid structure | 58.23% | 0.71% | 30.66% | 10.4% | 10.11% |
A, B, C, D indicate that the accounting of tetra- kinds of opticpaths of A, B, C, D in Fig. 1, R indicate reflectivity respectively in table 1.Rule is just
Pyramid structure has 88.89% path A, therefore average reflectance has 13.926%.Random positive pyramid structure reduces the roads A
Diameter ratio improves the paths C and D ratio, reflectivity is fallen below 11.362%.The paths regular inverted pyramid structure A institute accounting
Example is minimum, although not having the paths D, the paths C proportion has 40%, and reflectivity can also reach 10.727%.Due to falling
Pyramid structure is formed as in etching process, caused by the difference of (111) and (100) crystal face etching speed, therefore
Four faces of inverted pyramid are (111) crystal face, and the angle between each face of the structure has been fixed, therefore secondary reflection rate
Ratio be difficult to reduce again.To want to further decrease reflectivity, mainly by being anti-four times by the regioinvertions of triple reflection
The region penetrated.The paths the A proportion of the crystal shaped inverted pyramid structure of the embodiment of the present invention is reduced to 58.23%, less than rule
Then the 59.26% of inverted pyramid, meanwhile, the paths D proportion reaches 10.4%, is reduced to so as to cause average reflectance
10.11%.
Fig. 7 shows the reflectivity of different surfaces structure and the relational graph of wavelength.As can be seen that the crystal shaped gold of the present invention
Reflectivity of the reflectivity of word tower structure less than three kinds of structures of the prior art.
The present inventor has also carried out other designs and calculating, as a result, it has been found that, deflection surfaces structure of the invention is fallen
The diagonal line of two neighboring inverted pyramid structure unit not strictly overlaps in pyramid chain, as long as being mutually parallel i.e.
Can, when diagonal line is staggered overlapping, the length-width ratio of overlapping region is also possible less than 1.5, it is preferable that the length and width of overlapping region
Than being 1.The size of each inverted pyramid structure is also not necessarily limited to the above situation, as long as meeting certain overlap ratio, it is preferable that
The area of overlapping region and the ratio of single inverted pyramid structure unit top surface area are 0.04 to 0.36.In addition, parallel to each other
Spacing between inverted pyramid chain is the smaller the better, and it is best that spacing, which is zero,.
In order to further verify the present invention design effect, the present inventor by specific embodiment be prepared for it is crystal shaped fall
Pyramid structure.
First embodiment
The first embodiment provides a kind of preparation method of crystal shaped inverted pyramid structure, includes the following steps：
Step 1：Cleaning silicon chip, specifically, by silicon chip be put into the acid solution of hydrofluoric acid or nitric acid to original silicon chip into
Row cleaning；
Step 2：Suede structure is prepared on silicon chip after cleaning, specifically, by silicon chip immerse copper nitrate, hydrofluoric acid and
In the acid Woolen-making liquid of hydrogen peroxide, 15min is etched at a temperature of 10 DEG C, obtains suede structure.Wherein, copper in acid Woolen-making liquid
Ion concentration is 0.01mmol/L, a concentration of 0.5mol/L of hydrofluoric acid, a concentration of 0.1mol/L of hydrogen peroxide.
Step 3：Silicon chip with suede structure is cleaned in salpeter solution, to go metallic particles.
The scanning electron microscope sem figure of crystal shaped inverted pyramid structure prepared by the embodiment is as shown in Figure 8, it can be seen that its
Including multiple inverted pyramid chains, the inverted pyramid structure unit adjacent to each other in each inverted pyramid chain is overlapped.Invention
People is also tested for the reflectivity of the surface texture of embodiment preparation, the results show that the reflectivity 9.56% of the surface texture, this
With aforementioned theoretical calculation the result is that basic identical.Silicon chip and the prior art with surface texture shown in Fig. 8 it is random
Inverted pyramid antireflective silicon chip is compared, and reflectivity reduces by 1%, in addition, since the opening of the structure of the present invention is openr, structure
Step height difference smaller, therefore be more advantageous to subsequent battery and prepare, whereby, the efficiency of the battery with the structure is also carried
It is high.
In the preparation process in accordance with the present invention, the system of suede structure is carried out on the silicon chip of Buddha's warrior attendant wire cutting directly after cleaning
It is standby.Buddha's warrior attendant wire cutting can leave the parallel line cross of a lot of in silicon chip surface, and people think that always this line probably needs to remove
, subsequent preparation otherwise can be influenced, therefore, the micro-structure of the prior art prepares the step that can all have removal line cross, and this hair
A person of good sense has found that these lines are probably available, relies on these lines cross, can prepare the inverted pyramid structure to overlap each other,
This inverted pyramid structure to overlap each other can reduce the reflectivity on surface, and the preparation of subsequent suede structure may be used
Any preparation method well known in the art.
Second embodiment
The embodiment provides the preparation method of another crystal shaped inverted pyramid structure, includes the following steps：
Step 1：Silicon chip is specifically put into the acid solution of hydrofluoric acid or/and hydrogen peroxide to original by cleaning silicon chip
Silicon chip is cleaned；
Step 2：Suede structure is prepared on silicon chip after cleaning, specifically, by silicon chip immerse copper nitrate, hydrofluoric acid and
In the acid Woolen-making liquid of hydrogen peroxide, 30s is etched at a temperature of 80 DEG C, obtains suede structure.Wherein, in acid Woolen-making liquid copper from
Son a concentration of 50mmol/L, a concentration of 10mol/L of hydrofluoric acid, a concentration of 5mol/L of hydrogen peroxide.
Step 3：Silicon chip with suede structure is cleaned in ammonium hydroxide and hydrogen peroxide solution, to remove metal
Grain.
Test find, the second embodiment prepare crystal shaped inverted pyramid structure surface reflectivity be 9.83%, this with
The result of aforementioned theoretical calculation is also substantially identical.
According to other embodiments of the invention, in aforementioned preparation process, cleaning solution may be used well known in the art
What acid solution or alkaline solution.
According to other embodiments of the invention, the arbitrary method for preparing suede structure well known in the art may be used.
Although the present invention has been described by means of preferred embodiments, the present invention is not limited to described here
Embodiment, further include made various changes and variation without departing from the present invention.
Claims (10)
1. a kind of deflection surfaces structure, including multiple parallel inverted pyramid chains, wherein phase each other in each inverted pyramid chain
Two adjacent inverted pyramid structure units are overlapped.
2. deflection surfaces structure according to claim 1, wherein the spacing between the inverted pyramid chain is zero.
3. deflection surfaces structure according to claim 1, wherein two inverted pyramid structure unit edges adjacent to each other
The diagonal overlapping of the top surface of the inverted pyramid structure unit.
4. deflection surfaces structure according to claim 3, wherein the area of overlapping region and single inverted pyramid structure
The ratio of unit top surface area is 0.04 to 0.36.
5. deflection surfaces structure according to claim 4, wherein the area of overlapping region and single inverted pyramid structure
The ratio of unit top surface area is 0.16.
6. deflection surfaces structure according to claim 3, wherein two inverted pyramid structure units adjacent to each other
The diagonal line overlap of top surface is mutually parallel.
7. a kind of preparation method of deflection surfaces structure comprising following steps：
Step 1：Silicon chip is obtained using Buddha's warrior attendant line cutting technology；
Step 2：Clean the silicon chip；And
Step 3：Suede structure is prepared on the silicon chip.
8. the preparation method of deflection surfaces structure according to claim 7, wherein further include obtained to step 3
The step of sample is cleaned.
9. the preparation method of deflection surfaces structure according to claim 7, wherein, will be described in the step 3
Silicon chip is put into acid Woolen-making liquid and prepares suede structure.
10. a kind of deflection surfaces structure uses the preparation method described in any one of claim 7-9 to prepare.
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| CN201810384786.XA CN108615776B (en) | 2018-04-26 | 2018-04-26 | Anti-reflection surface structure and corresponding production method |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101681950A (en) * | 2007-05-31 | 2010-03-24 | 法国圣戈班玻璃厂 | Method for obtaining a textured substrate for a photovoltaic panel |
| CN102220645A (en) * | 2011-04-30 | 2011-10-19 | 常州天合光能有限公司 | Method for texturing silicon wafer cut by diamond wire |
| CN103928538A (en) * | 2014-04-04 | 2014-07-16 | 常州时创能源科技有限公司 | Single crystalline silicon solar cell |
| CN107190316A (en) * | 2017-05-17 | 2017-09-22 | 北京普扬科技有限公司 | Include polysilicon chip, its preparation method and the application of the superposition suede structure of falling rectangular pyramid |
| CN107546284A (en) * | 2017-07-13 | 2018-01-05 | 电子科技大学 | A kind of reverse wedge body light trapping structure and preparation method thereof |
-
2018
- 2018-04-26 CN CN201810384786.XA patent/CN108615776B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101681950A (en) * | 2007-05-31 | 2010-03-24 | 法国圣戈班玻璃厂 | Method for obtaining a textured substrate for a photovoltaic panel |
| CN102220645A (en) * | 2011-04-30 | 2011-10-19 | 常州天合光能有限公司 | Method for texturing silicon wafer cut by diamond wire |
| CN103928538A (en) * | 2014-04-04 | 2014-07-16 | 常州时创能源科技有限公司 | Single crystalline silicon solar cell |
| CN107190316A (en) * | 2017-05-17 | 2017-09-22 | 北京普扬科技有限公司 | Include polysilicon chip, its preparation method and the application of the superposition suede structure of falling rectangular pyramid |
| CN107546284A (en) * | 2017-07-13 | 2018-01-05 | 电子科技大学 | A kind of reverse wedge body light trapping structure and preparation method thereof |
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| CN108615776B (en) | 2021-04-27 |
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