CN105355697A - A light trapping structure and a manufacturing method thereof and a thin-film solar cell having the structure - Google Patents
A light trapping structure and a manufacturing method thereof and a thin-film solar cell having the structure Download PDFInfo
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- CN105355697A CN105355697A CN201510815200.7A CN201510815200A CN105355697A CN 105355697 A CN105355697 A CN 105355697A CN 201510815200 A CN201510815200 A CN 201510815200A CN 105355697 A CN105355697 A CN 105355697A
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Abstract
The invention relates to a light trapping structure and a manufacturing method thereof and a thin-film solar cell having the structure. The light trapping structure comprises a two-dimension right-angle rectangular-pyramid light-trapping silicon layer (4). The two-dimension right-angle rectangular-pyramid light-trapping silicon layer (4) is formed by a two-dimension right-angle rectangular-pyramid array in micro-nano period and non-fully symmetrical, wherein the shape of the two-dimension right-angle rectangular-pyramid of a single period is characterized in that the bottom surface is in a square shape, one edge is vertical to the bottom surface, the two side surfaces adjacent to the edge are vertical to the bottom surface, and the other two side surfaces are inclined to the bottom surface. The light trapping structure has the characteristics of higher coupling property, better broadband spectrum absorption and good angle sensitivity; and absorption enhancement effect is better than that of the structure of a conventional inverted pyramid and the like.
Description
Technical field
The present invention relates to a kind of light trapping structure and its manufacture method and the thin-film solar cells applying this structure.
Background technology
In recent years, along with progress, the expanding economy of science and technology, the demand of various countries to the energy is increasing, and the non-renewable energy resources such as electric power, coal, oil signal for help repeatedly, and facilitate developing rapidly of photovoltaic industry.The core devices of solar energy power generating is solar cell, and silicon solar cell is due to wide material sources, and cost is low, in occupation of the leading position of solar cell.Current solar cell mainly comprises crystal silicon solar batteries and thin-film solar cells.Compared with crystal silicon solar batteries, it is low that thin-film solar cells has cost, can large area produce, the advantages such as the low light level is better.But thin-film solar cells is owing to decreasing absorber thickness, absorption length is corresponding minimizing also, thus causes thin film silicon solar cell photoelectric conversion efficiency not high.Large quantity research shows periodicity, the systematicness nanostructure of preparing certain given shape at silicon chip surface, not only can increase the effective exercise length of sunlight in silicon chip inside, cause the coupling between incident light, incident light can also be reduced from air to the refractive index silicon chip propagation path, thus effectively improve the conversion efficiency of solar cell.
At present, in order to improve the efficiency of silicon-based film solar cells in industrial production, main method adopts interface disorder structure and pyramid structure.The first utilizes the medium texture structure of interface disorder or metallic particles as forward direction or backscatterer.Such as, RahulDewan have studied the sunken luminous energy power of interface disorder light trapping structure.First he utilize atomic force microscope (AFM) to scan the shape of interface disorder structure, in order to more know the structure of display surface, listing range value respectively and increasing three times and reduce the curve of three times.On the basis obtaining curve shape, he uses rigorous coupled wave algorithm (RCWA) method to calculate the sunken luminous energy power of structure further.Although the absorbability of hull cell can be promoted by this structure, as can be seen from this result of study.Disordered structure first makes surface structure to carry out Parameter analysis again.There is certain contingency in the design studies therefore for interface disorder light trapping structure, cannot repeat some good structural plane type, more cannot improve based on certain surface type.The second is that the dielectric structure of periodic or photonic crystal carry out capture light, utilizes grating coupling effectively can promote the photonic absorption of certain bandwidth.Such as, the people such as GangChen use the method for wet etching to prepare inverted pyramid structure in 5 μm of thick silica-based solar cells, and reach the short-circuit current density of 37.1mA/cm2.But wet etching obtains preparation method often also can form structure unordered in a jumble.Increase although light trapping structure unordered at random can obtain in wide spectral range to absorb, be difficult to because structural arrangement is unordered realize maximizing strengthening absorb.What arrange to make nanostructure is in good order, the method that they adopt mask lithography and wet etching to combine, but this method is also only applicable to monocrystaline silicon solar cell.
Generally, the spectral absorption scope that prior art utilizes disordered structure or pyramid to play increases limited, and absorption efficiency is not high, complex manufacturing technology, and cost is also higher.
Summary of the invention
The object of the present invention is to provide a kind of light trapping structure and its manufacture method and the thin-film solar cells applying this structure, play and not only there is periodically face type coupling strengthen wide spectral absorption efficiency, enhanced spectrum absorbs, and makes without the need to mask plate, simple, fast and the large effect of shaping area.
For solving above-mentioned technical problem, the present invention by the following technical solutions:
A kind of light trapping structure, comprise two-dimentional right angle rectangular pyramid shape and fall into light silicon layer, described two-dimentional right angle rectangular pyramid shape fall into light silicon layer by micro-nano periodically and the two-dimentional right angle rectangular pyramid array of Non-completety symmetry form, wherein the shape of the two-dimentional right angle rectangular pyramid in single cycle is: bottom surface is square, article one, seamed edge is perpendicular to bottom surface, two sides adjacent with this seamed edge are all perpendicular to bottom surface, and two sides favour described bottom surface in addition.
Further, the thickness of described silicon absorbed layer is 1000nm, and the mechanical periodicity scope of described two-dimentional right angle rectangular pyramid is 300nm to 1300nm, and height change scope is 100nm to 1000nm.
Further, the cycle in the single cycle of two-dimentional right angle rectangular pyramid is 700nm, and height is 900nm.
A kind of method preparing light trapping structure, comprise the following steps: scribe on silicon with two-beam interference and make right angle rectangular pyramid shape light trapping structure, the generation type of the two-dimentional right angle rectangular pyramid in single cycle is: two harness have the interference light of same light intensity, when two bundle coherent lights arrive on the tilted substrates face having certain angle of inclination, the light path of described two beam interferometer light is about the integral multiple of wavelength, originally symmetrical cosine interference pattern is made to ream half, become Non-completety symmetry structure, then by the exposure of rotational substrate 90 ° second time, the positive photoresist be exposed forms described two-dimentional right angle rectangular pyramid structure after development.
A kind of thin-film solar cells, comprise metal electrode, the skin of described metal electrode is disposed with the first transparent conductive oxide film layer, silicon absorbed layer, two dimension right angle rectangular pyramid shape falls into light silicon layer and the second transparent conductive oxide film layer, wherein said two-dimentional right angle rectangular pyramid shape fall into light silicon layer by micro-nano periodically and the two-dimentional right angle rectangular pyramid array of Non-completety symmetry form, wherein the shape of the two-dimentional right angle rectangular pyramid in single cycle is: bottom surface is square, article one, seamed edge is perpendicular to bottom surface, two sides adjacent with this seamed edge are all perpendicular to bottom surface, two sides favour described bottom surface in addition.
Compared with prior art, the invention has the beneficial effects as follows: light trapping structure disclosed by the invention is orderly periodicity Non-completety symmetry two-dimensional structure, there is stronger coupled characteristic, have wide spectral influx and translocation, feature that angle sensitivity is good, influx and translocation effect is better than the isostructural effect of traditional inverted pyramid, and directly can be prepared by simple two-beam interference photoetching method, shaping area limits by absorbed layer material greatly, not, without the need to mask plate, can be simple and quick make.
Accompanying drawing explanation
Fig. 1 is the schematic perspective view of a kind of light trapping structure of the present invention single two Dimensional Periodic right angle rectangular pyramid in the battery.
Fig. 2 is the short-circuit current density of a kind of light trapping structure different cycles of the present invention and height.
Fig. 3 be a kind of light trapping structure of the present invention battery in vertical incidence time absorption spectrum.
Fig. 4 is the absorption spectrum that a kind of light trapping structure of the present invention changes with angle.
Fig. 5 is a kind of semi-finished product structure schematic diagram preparing in the method for light trapping structure right angle rectangular pyramid structure when utilizing two-beam interference photoetching making one dimension of invention.
To be that invention is a kind of prepare in the method for light trapping structure the finished product structure schematic diagram utilizing two-beam interference photoetching making two dimension right angle rectangular pyramid structure to Fig. 6.
Fig. 7 is the generalized section of a kind of thin-film solar cells of the present invention.
In figure: 1-metal electrode, 2-first transparent conductive oxide film layer, 3-silicon absorbed layer, 4-two dimension right angle rectangular pyramid shape falls into light silicon layer, 5-second transparent conductive oxide film layer.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
Fig. 1 shows an embodiment of a kind of light trapping structure of the present invention: a kind of light trapping structure, comprise two-dimentional right angle rectangular pyramid shape and fall into light silicon layer 4, described two-dimentional right angle rectangular pyramid shape fall into light silicon layer 4 by micro-nano periodically and the two-dimentional right angle rectangular pyramid array of Non-completety symmetry form, wherein the shape of the two-dimentional right angle rectangular pyramid in single cycle is: bottom surface is square, article one, seamed edge is perpendicular to bottom surface, two sides adjacent with this seamed edge are all perpendicular to bottom surface, and two sides favour described bottom surface in addition.
Two dimension right angle rectangular pyramid shape falls into the assimilation effect of photosphere by embodying with under type: the influx and translocation effect of periodic two-dimensional right angle rectangular pyramid shape light trapping structure can according to short-circuit current density J during vertical incidence
scassess, its expression formula is as follows:
Wherein q is the quantity of electric charge, and λ is lambda1-wavelength, and h is planck constant, and c is the light velocity, I
aM1.5G(λ) be the radiation of AM1.5G solar spectrum, the absorption spectrum that A (λ) is battery, itself and photon structure are closely related, and during calculating, the absorption spectrum A (λ) of battery launches in the solar spectrum of 300nm to 1100nm.
According to a preferred embodiment of a kind of light trapping structure of the present invention, the thickness of described silicon absorbed layer 3 is 1000nm, cycle (width) the P excursion in the single cycle of described two-dimentional right angle rectangular pyramid is 300nm to 1300nm, and height H excursion is 100nm to 1000nm.
Fig. 2 shows a preferred embodiment of a kind of light trapping structure of the present invention, and the cycle P in the single cycle of two-dimentional right angle rectangular pyramid is 700nm, and height H is 900nm, and the short-circuit current density of its correspondence is 31.01mA/cm
2.In like manner, also can obtain a best inverted pyramid light trapping structure by this optimization method, its cycle is 600nm, is highly 700nm, and short-circuit current density is 28.27mA/cm
2.
In order to embody this best light trapping structure to the impact of battery influx and translocation, simultaneously with the battery of traditional pyramid light trapping structure, there is no light trapping structure flat plate cell, and the theoretical absorption limit compares.As shown in Figure 3, the battery with light trapping structure significantly on whole solar energy spectral limit all than the good absorbing effect of flat plate cell, and all level off to the limit.Meanwhile, best right angle rectangular pyramid shape light trapping structure is better than best inverted pyramid light trapping structure at the influx and translocation successful of long-wave band to battery of more than 700nm.
Fig. 4 shows the angular-spectrum analysis embodiment of a kind of light trapping structure of the present invention, incidence angle is when 0 ° to 85 ° change, it is insensitive to angle that the absorption spectrum of best right angle rectangular pyramid shape light trapping structure also show this right angle rectangular pyramid shape light trapping structure, similar with inverted pyramid.Consider process prepared by light trapping structure, the light trapping structure of right angle rectangular pyramid shape can be prepared by simple two-beam interference, and it is long-pending large to be shaped.Therefore, such periodic two-dimensional right angle rectangular pyramid shape light trapping structure is more practical.
Fig. 5 and Fig. 6 also show a kind of method preparing light trapping structure of the present invention, comprise the following steps: scribe on silicon with two-beam interference and make right angle rectangular pyramid shape light trapping structure, the generation type of the two-dimentional right angle rectangular pyramid in single cycle is: two harness have the interference light of same light intensity, when two bundle coherent lights arrive on the tilted substrates face having certain angle of inclination, the light path of described two beam interferometer light is about the integral multiple of wavelength, originally symmetrical cosine interference pattern is made to ream half, become unsymmetric structure, then by the exposure of rotational substrate 90 ° second time, the positive photoresist be exposed forms described two-dimentional right angle rectangular pyramid structure after development.
Fig. 7 shows an embodiment of a kind of thin-film solar cells of the present invention, composition graphs 1 is known: a kind of thin-film solar cells, comprise metal electrode 1, it is characterized in that: the skin of described metal electrode 1 is disposed with the first transparent conductive oxide film layer 2, silicon absorbed layer 3, two dimension right angle rectangular pyramid shape falls into light silicon layer 4 and the second transparent conductive oxide film layer 5, wherein said two-dimentional right angle rectangular pyramid shape fall into light silicon layer 4 by micro-nano periodically and the two-dimentional right angle rectangular pyramid array of Non-completety symmetry form, wherein the shape of the two-dimentional right angle rectangular pyramid in single cycle is: bottom surface is square, article one, seamed edge is perpendicular to bottom surface, two sides adjacent with this seamed edge are all perpendicular to bottom surface, two sides favour described bottom surface in addition.
Although with reference to multiple explanatory embodiment of the present invention, invention has been described here, but, should be appreciated that, those skilled in the art can design a lot of other amendment and execution mode, these amendments and execution mode will drop within spirit disclosed in the present application and spirit.More particularly, in the scope of, accompanying drawing open in the application and claim, multiple modification and improvement can be carried out to the building block of subject combination layout and/or layout.Except the distortion carried out building block and/or layout and improving, to those skilled in the art, other purposes also will be obvious.
Claims (5)
1. a light trapping structure, it is characterized in that: comprise two-dimentional right angle rectangular pyramid shape and fall into light silicon layer (4), described two-dimentional right angle rectangular pyramid shape fall into light silicon layer (4) by micro-nano periodically and the two-dimentional right angle rectangular pyramid array of Non-completety symmetry form, wherein the shape of the two-dimentional right angle rectangular pyramid in single cycle is: bottom surface is square, article one, seamed edge is perpendicular to bottom surface, two sides adjacent with this seamed edge are all perpendicular to bottom surface, and two sides favour described bottom surface in addition.
2. a kind of light trapping structure according to claim 1, it is characterized in that: the thickness of described silicon absorbed layer (3) is 1000nm, the mechanical periodicity scope in the single cycle of described two-dimentional right angle rectangular pyramid is 300nm to 1300nm, and height change scope is 100nm to 1000nm.
3. a kind of light trapping structure according to claim 1, is characterized in that: the cycle in the single cycle of two-dimentional right angle rectangular pyramid is 700nm, and height is 900nm.
4. prepare the method for light trapping structure for one kind, it is characterized in that comprising the following steps: scribe on silicon with two-beam interference and make right angle rectangular pyramid shape light trapping structure, the generation type of the two-dimentional right angle rectangular pyramid in single cycle is: two harness have the interference light of same light intensity, when two bundle coherent lights arrive on the tilted substrates face having certain angle of inclination, the light path of described two beam interferometer light is about the integral multiple of wavelength, originally symmetrical cosine interference pattern is made to ream half, become unsymmetric structure, then by the exposure of rotational substrate 90 ° second time, the positive photoresist be exposed forms described two-dimentional right angle rectangular pyramid structure after development.
5. a thin-film solar cells, comprise metal electrode (1), it is characterized in that: the skin of described metal electrode (1) is disposed with the first transparent conductive oxide film layer (2), silicon absorbed layer (3), two dimension right angle rectangular pyramid shape falls into light silicon layer (4) and the second transparent conductive oxide film layer (5), wherein said two-dimentional right angle rectangular pyramid shape fall into light silicon layer (4) by micro-nano periodically and the two-dimentional right angle rectangular pyramid array of Non-completety symmetry form, wherein the shape of the two-dimentional right angle rectangular pyramid in single cycle is: bottom surface is square, article one, seamed edge is perpendicular to bottom surface, two sides adjacent with this seamed edge are all perpendicular to bottom surface, two sides favour described bottom surface in addition.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111180539A (en) * | 2020-03-12 | 2020-05-19 | 常州时创能源股份有限公司 | Method for improving power generation capacity of solar cell module and square matrix |
| CN111244208A (en) * | 2020-03-12 | 2020-06-05 | 常州时创能源股份有限公司 | Solar cell and application thereof |
| CN111509060A (en) * | 2020-05-08 | 2020-08-07 | 常州时创能源股份有限公司 | Solar cell and application thereof |
| JP2021520514A (en) * | 2018-04-02 | 2021-08-19 | ノースロップ グラマン システムズ コーポレーション | Control of reflection and diffraction with tilted semiconductor metamaterials |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050109388A1 (en) * | 2003-11-05 | 2005-05-26 | Canon Kabushiki Kaisha | Photovoltaic device and manufacturing method thereof |
| FR2993704A1 (en) * | 2012-07-23 | 2014-01-24 | Commissariat Energie Atomique | Silicon wafer for manufacturing photovoltaic cell, has pattern including base and top part or top edge, where angle is formed in median direction between base and top part, or top edge with respect to normal part at plane |
| CN104867995A (en) * | 2015-04-27 | 2015-08-26 | 电子科技大学 | Two-dimension cosine waveform surface light tripping structure and solar film cell based on same |
-
2015
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050109388A1 (en) * | 2003-11-05 | 2005-05-26 | Canon Kabushiki Kaisha | Photovoltaic device and manufacturing method thereof |
| FR2993704A1 (en) * | 2012-07-23 | 2014-01-24 | Commissariat Energie Atomique | Silicon wafer for manufacturing photovoltaic cell, has pattern including base and top part or top edge, where angle is formed in median direction between base and top part, or top edge with respect to normal part at plane |
| CN104867995A (en) * | 2015-04-27 | 2015-08-26 | 电子科技大学 | Two-dimension cosine waveform surface light tripping structure and solar film cell based on same |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021520514A (en) * | 2018-04-02 | 2021-08-19 | ノースロップ グラマン システムズ コーポレーション | Control of reflection and diffraction with tilted semiconductor metamaterials |
| JP7381486B2 (en) | 2018-04-02 | 2023-11-15 | ノースロップ グラマン システムズ コーポレーション | Controlling reflection and diffraction with graded semiconductor metamaterials |
| CN111180539A (en) * | 2020-03-12 | 2020-05-19 | 常州时创能源股份有限公司 | Method for improving power generation capacity of solar cell module and square matrix |
| CN111244208A (en) * | 2020-03-12 | 2020-06-05 | 常州时创能源股份有限公司 | Solar cell and application thereof |
| CN111244208B (en) * | 2020-03-12 | 2022-02-18 | 常州时创能源股份有限公司 | Solar cell and application thereof |
| CN111509060A (en) * | 2020-05-08 | 2020-08-07 | 常州时创能源股份有限公司 | Solar cell and application thereof |
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