CN104362184B - Based on the thin film amorphous silicon solar cell of antireflection structure and guided mode resonance - Google Patents
Based on the thin film amorphous silicon solar cell of antireflection structure and guided mode resonance Download PDFInfo
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Abstract
A kind of thin film amorphous silicon solar cell based on antireflection structure and guided mode resonance for visible light wave range (300-800nm), the top anti-reflection film thickness of this solar cell is 55～60 nanometers, the middle grating absorbed layer cycle is that 505～515 nanometers, thickness and dutycycle are respectively 95～105 nanometers, 0.7～0.75, and the thickness of waveguide absorbed layer is 45～55 nanometers. In the time of light vertical incidence, its average integral absorption efficiency at 300-800nm wave band is higher than 66%, and average integral absorption efficiency has very large angle independence, its in the ranges of incidence angles of 0-66 ° higher than 60%. The thin film amorphous silicon solar cell that the present invention is based on antireflection structure and guided mode resonance is formed in conjunction with microelectronics deep etching processes by electron-beam direct writing device, draws materials conveniently, and cost is little, can produce in enormous quantities, has important practical prospect.
Description
Technical field
This patent relates to thin film amorphous silicon solar cell, particularly a kind of for visible light wave range based on antireflection structure and leadingThe thin film amorphous silicon solar cell of mould resonance.
Background technology
Generally, there are two kinds of perfect absorbers: a kind of is within the scope of wider wavestrip, all to have very high absorption,Be called broad band absorber, it is mainly used in area of solar cell; Another kind is in narrower bandwidth, to have perfect suctionReceive, be called selective absorber, be mainly used in designing highly sensitive detector, heat imaging device and arrowband absorption/hot spokeEmitter. At present, the research of thin-film solar cells has been become to a study hotspot, it is following photovoltaic device developmentAn important directions. Its main advantage can effectively reduce exactly cost and can be deposited in flexible substrate, stillAt present, the absorption efficiency of the thin film amorphous silicon material using in solar cell is very low, thereby enhancing non-crystalline silicon absorbed layerAbsorption efficiency is very important. At present, people have proposed to adopt micro-nano structure to strengthen the scheme of absorption, these micro-nano knotsStructure mainly comprises periodically grating, metal nanoparticle and metamaterial structure etc. In all these structures, the week of one dimensionPhase property grating is as a kind of important and simple device, and the light that can effectively increase in thin film amorphous silicon solar cell is inhaledReceive.
The wavelength selectivity that the people such as Sheng have proposed in the thin-film solar cells based on optical grating construction at first strengthens one of absorptionAs principle [formerly technology 1:P.Shengetal., Appl.Phys.Lett.43,579 – 581 (1983)]. The people such as Park have proposedIn absorbed layer, etching 1-D photon crystal strengthens the concept of absorption, and has drawn the theoretical integration suction of S polarization and P polarizationThe rate of producing effects (45%) [formerly technology 2:Y.Parketal., Opt.Express17,14312 – 14321 (2009)]. The people such as DaifFrom theoretical and experimentally verified the one dimension amorphous silicon flat panel photonic crystal of hydrogenation absorption [formerly technology 3:O.ElDaifetal.,Opt.Express18, A293 – A299 (2010) .]. The people such as Khaleque have reported that the periodicity non-crystalline silicon based on guided mode resonance is thinThe enhancing of film absorbs, and in the wave-length coverage of concurrent present 400-950nm, its integration absorbs enhancer and can reach 50%, butThat they do not analyze angle-dependence [formerly technology 4:T.Khalequeetal., inIntegrated that integration absorbsPhotonicsResearch,SiliconandNanophotonics,OSATechnicalDigest(CD)(2011),paperITuD3.]. The people such as Wu have designed the grating based solar battery based on guided mode resonance of absorber thickness in 360nm left and right,It is formerly technology 5:W.Wuetal. of 66%[, Opt.Lett.37,2103-2105 that its integration is absorbed in 300-750nm bandwidth(2012)]. Adopt thicker absorbed layer can realize higher absorption, but it is desired much larger than obtaining optimum electrical characteristicsAbsorber thickness (< 200nm).
Rectangular raster is to utilize Microelectronic etching technique, the grating with rectangle flute profile processing in substrate. Sub-wavelength squareShape grating diffration theory, can not be explained by simple scalar optical grating diffraction equation, and must adopt the Mike of vector formThis Wei Fangcheng in conjunction with boundary condition, accurately calculates result by the computer program of coding. The people such as Moharam giveAlgorithm [formerly technology 6:M.G.Moharametal., J.Opt.Soc.Am.A.12,1077 of rigorous coupled wave theory are gone out(1995)], can solve the Diffraction Problems of this class sub-wave length grating.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of thin based on antireflection structure and guided mode resonance for visible light wave rangeFilm non-crystal silicon solar cell. In the time of light vertical incidence, its average integral absorption efficiency at 300-800nm wave band higher than66%, and average integral absorption efficiency has very large angle independence, its in the ranges of incidence angles of 0-66 ° higher than 60%.Therefore the thin film amorphous silicon solar battery structure, proposing has important practical value.
Technical solution of the present invention is as follows:
A kind of thin film amorphous silicon solar-electricity based on antireflection structure and guided mode resonance for visible light wave range (300-800nm)Pond, its feature is, comprises anti-reflection film, grating absorbed layer and waveguide absorbed layer from top to bottom, described anti-reflection filmThickness be 55～60 nanometers, the cycle of described grating absorbed layer be 505～515 nanometers, thickness be 95～105 nanometers,Dutycycle is 0.7～0.75, and the thickness of described waveguide absorbed layer is 45～55 nanometers.
Preferably, the thickness of described anti-reflection film is 57.4 nanometers, and the cycle of grating absorbed layer is that 509 nanometers, thickness are100 nanometers, dutycycle are 0.724, and the thickness of waveguide absorbed layer is 50 nanometers.
The material of described anti-reflection film is tin indium oxide (hereinafter to be referred as ITO), and the material of grating absorbed layer grating ridge is amorphousThe material of silicon, grating groove is ITO, and the material of waveguide absorbed layer is non-crystalline silicon.
Compared with prior art, technique effect of the present invention is as follows:
(1) when the light vertical incidence of 300-800nm wave band then, its average integral absorption efficiency is higher than 66%, and averageIntegration absorption efficiency has very large angle independence, its in the ranges of incidence angles of 0-66 ° higher than 60%, 0-74 ° enterElevation range is interior higher than 50%.
(2) there is the advantages such as angle independence flexible and convenient to use, that integration absorption efficiency is higher and integration absorbs is larger, beAn ideal film photovoltaic device, utilizes electron-beam direct writing device in conjunction with Microelectronic etching technique, can be in enormous quantities,Produce at low cost, the solar cell properties after etching is stable, reliable, has important practical prospect.
Brief description of the drawings
Fig. 1 is the thin film amorphous silicon solar cell based on antireflection structure and guided mode resonance for visible light wave range of the present inventionGeometry.
In figure, 1 represents that (refractive index is n in region 11), 2 represent anti-reflection film, conventionally also for transparency electrode, material is(ITO, refractive index is 2), 3 represent grating absorbed layer, the material of grating ridge is non-crystalline silicon (a-Si), the material of grating grooveFor ITO, 4 represent waveguide absorbed layer, and material is a-Si, and 5 represent that (refractive index is n in region 52), 6 represent sunshine incident,Comprise TE and TM polarised light. D is the grating cycle, and f is grating dutycycle, h1、h2And h3Be respectively anti-reflection film, lightThe thickness of grid absorbed layer and waveguide absorbed layer, n1<2。
Average absorption efficiency when Fig. 2 is the sunshine vertical incidence of an embodiment in claimed range of the present invention is with wavelength variationsCurve.
Fig. 3 is that the average integral absorption efficiency of embodiment in Fig. 2 is with the variation of incidence angle.
Detailed description of the invention
Below in conjunction with embodiment and accompanying drawing, the invention will be further described, but should not limit the scope of the invention with this.
First refer to Fig. 1, Fig. 1 is that the film based on antireflection structure and guided mode resonance for visible light wave range of the present invention is non-The geometry of crystal silicon solar batteries. In figure, region 1,5 is all uniformly, is respectively air (refractive index n1=1) andVitreous silica (refractive index n2=1.46). Sunshine (comprising TE and TM polarised light) at a certain angle θ incides this devicePart, TE polarised light is corresponding to the direction of vibration of electric field intensity perpendicular to the plane of incidence, and TM polarised light shakes corresponding to electric field intensityMoving direction is parallel to the plane of incidence. As seen from the figure, the present invention is for thin based on antireflection structure and guided mode resonance of visible light wave rangeFilm non-crystal silicon solar cell, anti-reflection film thickness in top is 55～60 nanometers, the middle grating absorbed layer cycle is 505～It is 95～105 nanometers, 0.7～0.75 that 515 nanometers, thickness and dutycycle are respectively, and the thickness of waveguide absorbed layer is 45～55Nanometer.
Table 1 has provided a series of embodiment of the present invention, and in table, d is the grating cycle, and f is grating dutycycle, h1、h2And h3Be respectively the thickness of anti-reflection film, grating absorbed layer and waveguide absorbed layer. In order to assess the optical property of device, we utilizeIntegration absorbs as quality factor, and in studied wavelength band, the integration absorption efficiency of TM and TE polarization defines respectivelyFor:
Wherein, αTM(λ)(αTE(λ)) be the absorption spectrum of TM (TE) polarization, they are to calculate by rigorous coupled wave theoryGo out, S (λ) is solar radiation spectrum, is chosen as AM1.5g solar spectral radiancy. The limit of integration be from 300nm to800nm is the strongest wave band of solar radiation. Average integration absorption efficiency Ave is defined as TE and TM polarization integration absorbsThe mean value of efficiency. As seen from table, particularly when the top anti-reflection film thickness of solar cell is 57.4 nanometers, middleGrating absorbed layer cycle, thickness and dutycycle are respectively 509 nanometers, 100 nanometers and 0.724, and the thickness of waveguide absorbed layer isWhen 50 nanometer, in the time that the light of 300-800nm wave band impinges perpendicularly on this solar cell, its average integral absorption efficiency higher than68%, and average integral absorption efficiency has very large angle independence, its in the ranges of incidence angles of 0-66 ° higher than 60%,In the ranges of incidence angles of 0-74 ° higher than 50%. In making, the present invention is used for the humorous based on antireflection structure and guided mode of visible light wave rangeIn the thin film amorphous silicon solar cell shaking, suitably select grating cycle, dutycycle, thickness, anti-reflection film thickness andGuided wave absorber thickness just can obtain the solar battery structure of high average integral absorption efficiency in certain bandwidth.
Average absorption efficiency when Fig. 2 is the TE of an embodiment in claimed range of the present invention and TM polarised light vertical incidenceWith the curve of wavelength variations.
Fig. 3 is the curve that the average integral absorption efficiency of embodiment in Fig. 2 changes with incidence angle.
Thin film amorphous silicon solar cell based on antireflection structure and guided mode resonance of the present invention, has flexible and convenient to use, long-pendingDividing the advantages such as absorption efficiency angle independence higher and that integration absorbs is larger, is a kind of ideal film photovoltaic device,Utilize electron-beam direct writing device in conjunction with microelectronics deep etching technique, can be in enormous quantities, produce at low cost the device after etchingStable performance, reliable, has important practical prospect.
TE polarization, TM polarization integration absorption efficiency and average integral absorption efficiency when table 1 different incidence angles
Claims (3)
1. for the thin film amorphous silicon solar cell based on antireflection structure and guided mode resonance of visible light wave range,It is characterized in that, comprise anti-reflection film (2), grating absorbed layer (3) and waveguide absorbed layer (4) from top to bottom,The thickness of described anti-reflection film is 55～60 nanometers, the cycle of described grating absorbed layer be 505～515 nanometers,Thickness is that 95～105 nanometers, dutycycle are 0.7～0.75, and the thickness of described waveguide absorbed layer is 45～55 to receiveRice.
2. the film based on antireflection structure and guided mode resonance for visible light wave range according to claim 1 is non-Crystal silicon solar batteries, is characterized in that, the thickness of described anti-reflection film is 57.4 nanometers, grating absorbed layerCycle is that 509 nanometers, thickness are that 100 nanometers, dutycycle are 0.724, and the thickness of waveguide absorbed layer is 50 nanometers.
3. the film based on antireflection structure and guided mode resonance for visible light wave range according to claim 1 is non-Crystal silicon solar batteries, is characterized in that, the material of described anti-reflection film is ITO, grating absorbed layer grating ridgeMaterial be that the material of non-crystalline silicon, grating groove is ITO, the material of waveguide absorbed layer is non-crystalline silicon.
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| CN109270609B (en) * | 2018-10-17 | 2020-08-04 | 江南大学 | Method for realizing selective wave absorption by utilizing hyperbolic metamaterial grating and wave absorber |
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