CN107623053A - Diamond wire silicon chip based on chain-type texture-etching equipment receives micro- matte preparation method - Google Patents
Diamond wire silicon chip based on chain-type texture-etching equipment receives micro- matte preparation method Download PDFInfo
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Abstract
Micro- matte preparation method is received the invention discloses a kind of diamond wire silicon chip based on chain-type texture-etching equipment, and diamond wire silicon chip is first immersed in AgNO3、HF、HNO3Mixed liquor in react, surface forms nanoscale etch pit of many inside containing Argent grain, is then immersed in salpeter solution and reacts, then is immersed in HF, HNO3Mixed liquor in react, nanoscale etch pit is expanded as submicron order etch pit, finally carry out alkali cleaning and pickling.Preparation method of the present invention can effectively remove the cutting stria of diamond wire silicon chip surface, obtain the homogeneous sub-micron matte of pattern；Easy one-step method, cost is relatively low, process stabilizing, reproducible, without using additive, suitable for industrial-scale volume production；By changing technological temperature and liquid proportion, matte size, reflectivity and outward appearance homogeneity can be adjusted, by coordinating different solar cells subsequently diffusion and coating process, good passivation effect can be obtained, so as to obtain higher cell conversion efficiency.
Description
Technical field
The present invention relates to crystal silicon cell field, particularly a kind of diamond wire silicon wafer suede preparation method.
Background technology
In recent years, the maturation with photovoltaic technology and development, the preparation cost of solar cell is greatly reduced, however with biography
System fossil energy is compared, and the cost of solar cell is still higher.In order to further reduce cost, silicon chip production firm is constantly more
New and improvement crystalline silicon cutting technique.Golden steel wire cutting technique, as a kind of new silicon chip cutting technique, with its cutting efficiency
The high, advantage that cost is low and environmental pollution is small has been obtained for being widely applied in monocrystalline silicon piece.But Buddha's warrior attendant wire cutting
Silicon chip reflectivity is high, damaging layer is small, therefore is difficult to form good matte using the sour etching method of routine on polysilicon chip
Structure, so as to hinder its large-scale application in polysilicon chip.
At present, the method for solving diamond wire silicon wafer wool making mainly has three kinds, the black silicon system of the dry method based on reactive ion etching
Preparation Method, the black silicon method of wet method for combining the method for conventional making herbs into wool using additive and being corroded based on metal catalytic.Use addition
The method that agent combines conventional making herbs into wool, application is more universal, it can be difficult to forming the matte that pattern is homogeneous, reflectivity is relatively low.Metal
The black silicon method of wet method of catalyzed corrosion has that cost is low, carries and imitates high comprehensive advantage, reflectivity can be effectively reduced, in diamond wire
Good matte, most development potentiality are formed on polysilicon chip, but usually requires to complete by two-step method；And current wet method
Black silicon process for etching mainly coordinates slot type etching device, carries silicon chip using the gaily decorated basket, is immersed in decoction and is chemically reacted, whole
Silicon chip remains static during individual, yet with each position solution concentration and non-uniform temperature in cell body, then can cause
Matte prepares heterogeneity.
The etching method and application (country origin of a kind of diamond wire silicon chip：China, publication number：105696084A, publication date：
2016-06-22) disclose using silver nitrate as the first treatment fluid, the mixed solution of hydrofluoric acid and hydrogen peroxide is second processing liquid, is entered
After row two-step method handles and carries out alkali cleaning and pickling, silicon chip surface reflectivity is obtained in 17-18.3%.
The making herbs into wool preprocess method and silicon wafer fine hair making method (country origin of silicon chip based on Buddha's warrior attendant wire cutting：China, publication number：
104962998A, publication date：2015-10-07) disclose and remove cutting for diamond wire silicon chip surface using two kinds of pretreatment fluid A
Cut, carry out reusing the pretreatment matte that pretreatment fluid B forms the uniform micro-nano structure of tool after metallic particles are gone in pickling.
The black silicon of one-step method wet method prepares and surface treatment method (country origin：China, publication number：106024988A, publication date
Phase：2016-10-12) disclose the mixed aqueous solution of dense the hydrofluoric acid oxidant and high molecular polymer using metal ion
Black silicon is made, then is dipped in progress surface optimization processing in the corrosive liquid containing additive, obtains black silicon matte.
The above method can obtain the relatively low black silicon micro-nano matte of reflectivity, but these method courses of reaction are relatively multiple
Miscellaneous, need to use could be made good suede under two step making herbs into wool methods or the auxiliary of use unstable hydrogen peroxide and other additives
Face, and suede structure is difficult to control.These excessively complicated methods make it be difficult to the scale of mass production suitable for solar cell,
Volume production stability is reduced, the use of other additives also adds volume production cost to a certain extent.
The content of the invention
Goal of the invention：In view of the above-mentioned problems, it is an object of the invention to provide a kind of diamond wire based on chain-type texture-etching equipment
Silicon chip receives micro- matte preparation method, coordinates chain-type texture-etching equipment, by the black silicon method of easy one-step method wet method, in diamond wire silicon
Ultra-low reflectance matte is made in piece surface.
Technical scheme：A kind of diamond wire silicon chip based on chain-type texture-etching equipment receives micro- matte preparation method, including following step
Suddenly：
Step 1：Diamond wire silicon chip is immersed in AgNO3、HF、HNO3Mixed liquor in react, while carry out Argent grain and sink
Product and HF-HNO3The surface-texturing of acid corrosion system, Buddha's warrior attendant wire cutting trace is removed, surface forms many inside containing Argent grain
Nanoscale etch pit；
Step 2：The diamond wire silicon chip that step 1 obtains is immersed in salpeter solution and reacted, Argent grain is removed and spends
Ionized water is cleaned；
Step 3：The diamond wire silicon chip that step 2 obtains is immersed in HF, HNO3Mixed liquor in react, make in step 1
Nanoscale etch pit expand as submicron order etch pit；
Step 4：The diamond wire silicon chip that step 3 is obtained carries out alkali cleaning and pickling, removes the porous silicon on surface and other
Impurity, and cleaning, drying.
Further, in step 1, the AgNO3、HF、HNO3Mixed liquor in, AgNO3Molar concentration be 0.0001~
0.01mol/L, calculated with solute, HNO3Volume ratio with HF is 1: (1~5), AgNO3With HF, HNO3The ratio of both quality sums
For 1: (3000~6000).
Further, in step 1, reaction temperature is 10~40 DEG C, and the reaction time is 30~70s.
Further, in step 1, the size of the Argent grain is 60~130nm.
Further, in step 2, the mass concentration of the salpeter solution is 20~67%.
Further, in step 2, reaction temperature is 30~55 DEG C, and the reaction time is 20~50s.
Further, in step 3, described HF, HNO3Mixed liquor in, calculated with solute, HNO3Volume ratio with HF is 1
: (1~5).
Further, in step 3, reaction temperature is 10~40 DEG C, and the reaction time is 20~50s.
Further, in step 3, the size of the submicron order etch pit is 0.6~1.5 μm, its 350~
Reflectivity between 1100nm spectrum is 13~26%.
Further, in step 1, the diamond wire silicon chip is p-type polysilicon piece.
Beneficial effect：Compared with prior art, it is an advantage of the invention that：Preparation method of the present invention can effectively remove diamond wire
The cutting stria of silicon chip surface, obtain the homogeneous sub-micron matte of pattern；Pass through the black silicon method of easy one-step method wet method, cost
Relatively low, process stabilizing is reproducible, and without using additive, used chemicals chemical stability is high, is not easily decomposed,
Suitable for industrial-scale volume production；By changing technological temperature and liquid proportion in preparation method, matte size, anti-can be adjusted
Rate and outward appearance homogeneity are penetrated, by coordinating different solar cells subsequently diffusion and coating process, can be obtained good blunt
Change effect, reduce the compound of carrier, increase open-circuit voltage while short circuit current is improved, turn so as to obtain higher battery
Change efficiency.
Brief description of the drawings
Silicon chip surface reflectivity comparison diagram after the making herbs into wool that Fig. 1 is embodiment 1, embodiment 2, comparative example 1 measure, from bottom to top
It is corresponding in turn in embodiment 1, embodiment 2, comparative example 1；
Fig. 2 is silicon chip surface electron microscope picture after the making herbs into wool of embodiment 2.
Embodiment
Below in conjunction with the accompanying drawings and specific embodiment, the present invention is furture elucidated, it should be understood that these embodiments are merely to illustrate
The present invention rather than limitation the scope of the present invention, after the present invention has been read, those skilled in the art are each to the present invention's
The modification of the kind equivalent form of value falls within the application appended claims limited range.
Embodiment 1
A kind of diamond wire silicon chip based on chain-type texture-etching equipment receives micro- matte preparation method, more from Buddha's warrior attendant wire cutting p-type
Crystal silicon chip is standby, 156.75 × 156.75mm of size2, about 185 μm of thickness, using chain-type texture-etching equipment, preparation method is specifically wrapped
Include following steps：
Step 1：Diamond wire silicon chip is immersed in AgNO3、HF、HNO3Mixed liquor in react, reaction temperature be 28 DEG C, instead
It is 50s between seasonable, while carries out Argent grain deposition and HF-HNO3The surface-texturing of acid corrosion system, remove Buddha's warrior attendant wire cutting
Trace, diamond wire silicon chip surface is formed nanoscale etch pit of many inside containing Argent grain, the size of Argent grain for 60~
130nm。
The AgNO3、HF、HNO3Mixed liquor in, AgNO3Molar concentration is 0.001mol/L, is calculated with solute, HNO3With
HF volume ratio is 1: 2, AgNO3With HF, HNO3The ratio of both quality sums is 1: 5000.
Step 2：The diamond wire silicon chip that step 1 obtains is immersed in mass concentration to be reacted in 67% salpeter solution, instead
It is 36 DEG C, reaction time 30s to answer temperature, removes Argent grain and is cleaned with deionized water.
Step 3：The diamond wire silicon chip that step 2 obtains is immersed in HF, HNO3Mixed liquor in react, reaction temperature is
22 DEG C, reaction time 30s, making herbs into wool reaming is carried out, the nanoscale etch pit in step 1 is expanded as submicron order etch pit,
The size of submicron order etch pit is 0.6~1.5 μm.
HF, the HNO3Mixed liquor in, calculated with solute, HNO3Volume ratio with HF is 1: 4.
Above step completes making herbs into wool, produces silicon chip after making herbs into wool.
Step 4：The diamond wire silicon chip that step 3 is obtained carries out alkali cleaning and pickling, removes the porous silicon on surface and other
Impurity, and cleaning, drying.
It is anti-between 350~1100nm spectrum using D8 reflectometer test surfaces reflectivity by silicon chip obtained above
Rate is penetrated as 17.8%.With reference to reflectivity size, the further batteries such as cell piece diffusion, etching, plated film and silk-screen printing are coordinated to prepare
Technique, the silicon chip is prepared into cell piece and detects its unit for electrical property parameters.
Embodiment 2
A kind of diamond wire silicon chip based on chain-type texture-etching equipment receives micro- matte preparation method, more from Buddha's warrior attendant wire cutting p-type
Crystal silicon chip is standby, 156.75 × 156.75mm of size2, about 185 μm of thickness, using chain-type texture-etching equipment, preparation method is specifically wrapped
Include following steps：
Step 1：Diamond wire silicon chip is immersed in AgNO3、HF、HNO3Mixed liquor in react, reaction temperature be 24 DEG C, instead
It is 30s between seasonable, while carries out Argent grain deposition and HF-HNO3The surface-texturing of acid corrosion system, remove Buddha's warrior attendant wire cutting
Trace, diamond wire silicon chip surface is formed nanoscale etch pit of many inside containing Argent grain, the size of Argent grain for 60~
130nm。
The AgNO3、HF、HNO3Mixed liquor in, AgNO3Molar concentration is 0.001mol/L, is calculated with solute, HNO3With
HF volume ratio is 1: 1, AgNO3With HF, HNO3The ratio of both quality sums is 1: 3000.
Step 2：The diamond wire silicon chip that step 1 obtains is immersed in mass concentration to be reacted in 50% salpeter solution, instead
It is 46 DEG C, reaction time 40s to answer temperature, removes Argent grain and is cleaned with deionized water.
Step 3：The diamond wire silicon chip that step 2 obtains is immersed in HF, HNO3Mixed liquor in react, reaction temperature is
25 DEG C, reaction time 20s, making herbs into wool reaming is carried out, the nanoscale etch pit in step 1 is expanded as submicron order etch pit,
The size of submicron order etch pit is 0.6~1.5 μm.
HF, the HNO3Mixed liquor in, calculated with solute, HNO3Volume ratio with HF is 1: 2.
Above step completes making herbs into wool, produces silicon chip after making herbs into wool.
Step 4：The diamond wire silicon chip that step 3 is obtained carries out alkali cleaning and pickling, removes the porous silicon on surface and other
Impurity, and cleaning, drying.
It is anti-between 350~1100nm spectrum using D8 reflectometer test surfaces reflectivity by silicon chip obtained above
Rate is penetrated as 21%.With reference to reflectivity size, the further batteries such as cell piece diffusion, etching, plated film and silk-screen printing are coordinated to prepare work
Skill, the silicon chip is prepared into cell piece and detects its unit for electrical property parameters.
Embodiment 3
A kind of diamond wire silicon chip based on chain-type texture-etching equipment receives micro- matte preparation method, more from Buddha's warrior attendant wire cutting p-type
Crystal silicon chip is standby, 156.75 × 156.75mm of size2, about 185 μm of thickness, using chain-type texture-etching equipment, preparation method is specifically wrapped
Include following steps：
Step 1：Diamond wire silicon chip is immersed in AgNO3、HF、HNO3Mixed liquor in react, reaction temperature be 26 DEG C, instead
It is 70s between seasonable, while carries out Argent grain deposition and HF-HNO3The surface-texturing of acid corrosion system, remove Buddha's warrior attendant wire cutting
Trace, diamond wire silicon chip surface is formed nanoscale etch pit of many inside containing Argent grain, the size of Argent grain for 60~
130nm。
The AgNO3、HF、HNO3Mixed liquor in, AgNO3Molar concentration is 0.0001mol/L, is calculated with solute, HNO3With
HF volume ratio is 1: 5, AgNO3With HF, HNO3The ratio of both quality sums is 1: 6000.
Step 2：The diamond wire silicon chip that step 1 obtains is immersed in mass concentration to be reacted in 30% salpeter solution, instead
It is 55 DEG C, reaction time 20s to answer temperature, removes Argent grain and is cleaned with deionized water.
Step 3：The diamond wire silicon chip that step 2 obtains is immersed in HF, HNO3Mixed liquor in react, reaction temperature is
34 DEG C, reaction time 50s, making herbs into wool reaming is carried out, the nanoscale etch pit in step 1 is expanded as submicron order etch pit,
The size of submicron order etch pit is 0.6~1.5 μm.
HF, the HNO3Mixed liquor in, calculated with solute, HNO3Volume ratio with HF is 1: 5.
Above step completes making herbs into wool, produces silicon chip after making herbs into wool.
Step 4：The diamond wire silicon chip that step 3 is obtained carries out alkali cleaning and pickling, removes the porous silicon on surface and other
Impurity, and cleaning, drying.
It is anti-between 350~1100nm spectrum using D8 reflectometer test surfaces reflectivity by silicon chip obtained above
Rate is penetrated as 22.1%.With reference to reflectivity size, the further batteries such as cell piece diffusion, etching, plated film and silk-screen printing are coordinated to prepare
Technique, the silicon chip is prepared into cell piece and detects its unit for electrical property parameters.
Embodiment 4
A kind of diamond wire silicon chip based on chain-type texture-etching equipment receives micro- matte preparation method, more from Buddha's warrior attendant wire cutting p-type
Crystal silicon chip is standby, 156.75 × 156.75mm of size2, about 185 μm of thickness, using chain-type texture-etching equipment, preparation method is specifically wrapped
Include following steps：
Step 1：Diamond wire silicon chip is immersed in AgNO3、HF、HNO3Mixed liquor in react, reaction temperature be 57 DEG C, instead
It is 40s between seasonable, while carries out Argent grain deposition and HF-HNO3The surface-texturing of acid corrosion system, remove Buddha's warrior attendant wire cutting
Trace, diamond wire silicon chip surface is formed nanoscale etch pit of many inside containing Argent grain, the size of Argent grain for 60~
130nm。
The AgNO3、HF、HNO3Mixed liquor in, AgNO3Molar concentration is 0.01mol/L, is calculated with solute, HNO3With HF
Volume ratio be 1: 2, AgNO3With HF, HNO3The ratio of both quality sums is 1: 4000.
Step 2：The diamond wire silicon chip that step 1 obtains is immersed in mass concentration to be reacted in 42% salpeter solution, instead
It is 15 DEG C, reaction time 45s to answer temperature, removes Argent grain and is cleaned with deionized water.
Step 3：The diamond wire silicon chip that step 2 obtains is immersed in HF, HNO3Mixed liquor in react, reaction temperature is
10 DEG C, reaction time 35s, making herbs into wool reaming is carried out, the nanoscale etch pit in step 1 is expanded as submicron order etch pit,
The size of submicron order etch pit is 0.6~1.5 μm.
HF, the HNO3Mixed liquor in, calculated with solute, HNO3Volume ratio with HF is 1: 4.
Above step completes making herbs into wool, produces silicon chip after making herbs into wool.
Step 4：The diamond wire silicon chip that step 3 is obtained carries out alkali cleaning and pickling, removes the porous silicon on surface and other
Impurity, and cleaning, drying.
It is anti-between 350~1100nm spectrum using D8 reflectometer test surfaces reflectivity by silicon chip obtained above
Rate is penetrated as 26%.With reference to reflectivity size, the further batteries such as cell piece diffusion, etching, plated film and silk-screen printing are coordinated to prepare work
Skill, the silicon chip is prepared into cell piece and detects its unit for electrical property parameters.
Embodiment 5
A kind of diamond wire silicon chip based on chain-type texture-etching equipment receives micro- matte preparation method, more from Buddha's warrior attendant wire cutting p-type
Crystal silicon chip is standby, 156.75 × 156.75mm of size2, about 185 μm of thickness, using chain-type texture-etching equipment, preparation method is specifically wrapped
Include following steps：
Step 1：Diamond wire silicon chip is immersed in AgNO3、HF、HNO3Mixed liquor in react, reaction temperature be 10 DEG C, instead
It is 60s between seasonable, while carries out Argent grain deposition and HF-HNO3The surface-texturing of acid corrosion system, remove Buddha's warrior attendant wire cutting
Trace, diamond wire silicon chip surface is formed nanoscale etch pit of many inside containing Argent grain, the size of Argent grain for 60~
130nm。
The AgNO3、HF、HNO3Mixed liquor in, AgNO3Molar concentration is 0.008mol/L, is calculated with solute, HNO3With
HF volume ratio is 1: 4, AgNO3With HF, HNO3The ratio of both quality sums is 1: 5000.
Step 2：The diamond wire silicon chip that step 1 obtains is immersed in mass concentration to be reacted in 42% salpeter solution, instead
It is 30 DEG C, reaction time 50s to answer temperature, removes Argent grain and is cleaned with deionized water.
Step 3：The diamond wire silicon chip that step 2 obtains is immersed in HF, HNO3Mixed liquor in react, reaction temperature is
40 DEG C, reaction time 30s, making herbs into wool reaming is carried out, the nanoscale etch pit in step 1 is expanded as submicron order etch pit,
The size of submicron order etch pit is 0.6~1.5 μm.
HF, the HNO3Mixed liquor in, calculated with solute, HNO3Volume ratio with HF is 1: 3.
Above step completes making herbs into wool, produces silicon chip after making herbs into wool.
Step 4：The diamond wire silicon chip that step 3 is obtained carries out alkali cleaning and pickling, removes the porous silicon on surface and other
Impurity, and cleaning, drying.
It is anti-between 350~1100nm spectrum using D8 reflectometer test surfaces reflectivity by silicon chip obtained above
Rate is penetrated as 13%.With reference to reflectivity size, the further batteries such as cell piece diffusion, etching, plated film and silk-screen printing are coordinated to prepare work
Skill, the silicon chip is prepared into cell piece and detects its unit for electrical property parameters.
Embodiment 6
A kind of diamond wire silicon chip based on chain-type texture-etching equipment receives micro- matte preparation method, more from Buddha's warrior attendant wire cutting p-type
Crystal silicon chip is standby, 156.75 × 156.75mm of size2, about 185 μm of thickness, using chain-type texture-etching equipment, preparation method is specifically wrapped
Include following steps：
Step 1：Diamond wire silicon chip is immersed in AgNO3、HF、HNO3Mixed liquor in react, reaction temperature be 40 DEG C, instead
It is 40s between seasonable, while carries out Argent grain deposition and HF-HNO3The surface-texturing of acid corrosion system, remove Buddha's warrior attendant wire cutting
Trace, diamond wire silicon chip surface is formed nanoscale etch pit of many inside containing Argent grain, the size of Argent grain for 60~
130nm。
The AgNO3、HF、HNO3Mixed liquor in, AgNO3Molar concentration is 0.005mol/L, is calculated with solute, HNO3With
HF volume ratio is 1: 3, AgNO3With HF, HNO3The ratio of both quality sums is 1: 4000.
Step 2：The diamond wire silicon chip that step 1 obtains is immersed in mass concentration to be reacted in 20% salpeter solution, instead
It is 47 DEG C, reaction time 35s to answer temperature, removes Argent grain and is cleaned with deionized water.
Step 3：The diamond wire silicon chip that step 2 obtains is immersed in HF, HNO3Mixed liquor in react, reaction temperature is
30 DEG C, reaction time 40s, making herbs into wool reaming is carried out, the nanoscale etch pit in step 1 is expanded as submicron order etch pit,
The size of submicron order etch pit is 0.6~1.5 μm.
HF, the HNO3Mixed liquor in, calculated with solute, HNO3Volume ratio with HF is 1: 1.
Above step completes making herbs into wool, produces silicon chip after making herbs into wool.
Step 4：The diamond wire silicon chip that step 3 is obtained carries out alkali cleaning and pickling, removes the porous silicon on surface and other
Impurity, and cleaning, drying.
It is anti-between 350~1100nm spectrum using D8 reflectometer test surfaces reflectivity by silicon chip obtained above
Rate is penetrated as 16.1%.With reference to reflectivity size, the further batteries such as cell piece diffusion, etching, plated film and silk-screen printing are coordinated to prepare
Technique, the silicon chip is prepared into cell piece and detects its unit for electrical property parameters.
Comparative example 1
Diamond wire silicon wafer suede preparation, size standby from Buddha's warrior attendant wire cutting p-type polysilicon piece are carried out using additive
156.75×156.75mm2, about 185 μm of thickness, diamond wire silicon wafer suede preparation is carried out using additive, set using groove type etching
Standby, preparation method specifically includes following steps：
Step 1：Diamond wire silicon chip is put into the texturing slot for prepare Woolen-making liquid and reacted, 7 DEG C of reaction temperature, the reaction time
90s.Hydrofluoric acid, nitric acid and additive are included in Woolen-making liquid, the wherein mol ratio of hydrofluoric acid and nitric acid is 1: 5, and additive includes
Polyvinyl alcohol, polyethylene glycol and deionized water.
Step 2：The diamond wire silicon chip that step 1 is obtained carries out alkali cleaning and pickling, removes the porous silicon on surface and other
Impurity, and cleaning, drying.
It is anti-between 350~1100nm spectrum using D8 reflectometer test surfaces reflectivity by silicon chip obtained above
Rate is penetrated as 25.4%.With reference to reflectivity size, the further batteries such as cell piece diffusion, etching, plated film and silk-screen printing are coordinated to prepare
Technique, the silicon chip is prepared into cell piece and detects its unit for electrical property parameters.
Silicon chip surface reflectivity is contrasted after the making herbs into wool that embodiment 1, embodiment 2, comparative example 1 are measured, and forms Fig. 1,
Three curves are corresponding in turn in embodiment 1, embodiment 2, comparative example 1 from bottom to top.
It is listed in Table for embodiment 1, embodiment 2, comparative example 1 making herbs into wool after silicon chip and battery sheet data：
| Reflectivity (%) | Open-circuit voltage (V) | Short circuit current (A) | Battery efficiency (%) | |
| Embodiment 1 | 17.8 | 0.633 | 9.024 | 18.80 |
| Embodiment 2 | 21 | 0.634 | 8.949 | 18.70 |
| Embodiment 3 | 22.1 | 0.635 | 9.033 | 18.92 |
| Embodiment 4 | 26 | 0.634 | 8.901 | 18.63 |
| Embodiment 5 | 13 | 0.629 | 8.950 | 18.55 |
| Embodiment 6 | 16.1 | 0.630 | 8.993 | 18.72 |
| Comparative example 1 | 25.4 | 0.632 | 8.872 | 18.44 |
It can be seen that by the inventive method it is prepared by diamond wire silicon chip receive micro- matte reflectivity it is significant lower, preparation side
By changing technological temperature and liquid proportion in method, suede structure size, reflectivity and outward appearance homogeneity can be adjusted, is prepared
Equipment uses chain-type texture-etching equipment, carries out diamond wire silicon chip transmission with corrosion-resistant roller, diamond wire silicon chip in whole course of reaction
Constantly travel forward, make decoction contact with diamond wire silicon chip more abundant using chain equipment, every diamond wire silicon chip
Between homogeneity it is more preferable, there is more optimal effect.By coordinating different solar cells subsequently diffusion and coating process,
Good passivation effect can be obtained, reduces the compound of carrier, increases open-circuit voltage while short circuit current is improved, so as to obtain
Obtain higher cell conversion efficiency.
Fig. 2 is silicon chip surface electron microscope picture after the making herbs into wool of embodiment 2, it is seen that preparation method of the present invention can be removed effectively
The cutting stria of diamond wire silicon chip surface, obtain the homogeneous sub-micron matte of pattern.
Preparation method of the present invention is substantially the black silicon method of wet method, but only needs a step to complete, without using additive, cost
Relatively low, process stabilizing is reproducible, and used chemicals chemical stability is high, is not easily decomposed, suitable for industrial-scale
Volume production.
Claims (10)
1. a kind of diamond wire silicon chip based on chain-type texture-etching equipment receives micro- matte preparation method, it is characterised in that including following step
Suddenly：
Step 1：Diamond wire silicon chip is immersed in AgNO3、HF、HNO3Mixed liquor in react, while carry out Argent grain deposition and
HF-HNO3The surface-texturing of acid corrosion system, Buddha's warrior attendant wire cutting trace is removed, surface forms nanometer of many inside containing Argent grain
Level etch pit；
Step 2：The diamond wire silicon chip that step 1 obtains is immersed in salpeter solution and reacted, Argent grain is removed and uses deionization
Water is cleaned；
Step 3：The diamond wire silicon chip that step 2 obtains is immersed in HF, HNO3Mixed liquor in react, make receiving in step 1
Meter level etch pit expands as submicron order etch pit；
Step 4：The diamond wire silicon chip that step 3 is obtained carries out alkali cleaning and pickling, removes the porous silicon on surface and other impurity,
And cleaning, drying.
2. the diamond wire silicon chip according to claim 1 based on chain-type texture-etching equipment receives micro- matte preparation method, its feature
It is：In step 1, the AgNO3、HF、HNO3Mixed liquor in, AgNO3Molar concentration is 0.0001~0.01mol/L, with
Solute calculates, HNO3Volume ratio with HF is 1: (1~5), AgNO3With HF, HNO3The ratio of both quality sums is 1: (3000~
6000)。
3. the diamond wire silicon chip according to claim 1 based on chain-type texture-etching equipment receives micro- matte preparation method, its feature
It is：In step 1, reaction temperature is 10~40 DEG C, and the reaction time is 30~70s.
4. the diamond wire silicon chip according to claim 1 based on chain-type texture-etching equipment receives micro- matte preparation method, its feature
It is：In step 1, the size of the Argent grain is 60~130nm.
5. the diamond wire silicon chip according to claim 1 based on chain-type texture-etching equipment receives micro- matte preparation method, its feature
It is：In step 2, the mass concentration of the salpeter solution is 20~67%.
6. the diamond wire silicon chip according to claim 1 based on chain-type texture-etching equipment receives micro- matte preparation method, its feature
It is：In step 2, reaction temperature is 30~55 DEG C, and the reaction time is 20~50s.
7. the diamond wire silicon chip according to claim 1 based on chain-type texture-etching equipment receives micro- matte preparation method, its feature
It is：In step 3, described HF, HNO3Mixed liquor in, calculated with solute, HNO3Volume ratio with HF is 1: (1~5).
8. the diamond wire silicon chip according to claim 1 based on chain-type texture-etching equipment receives micro- matte preparation method, its feature
It is：In step 3, reaction temperature is 10~40 DEG C, and the reaction time is 20~50s.
9. the diamond wire silicon chip according to claim 1 based on chain-type texture-etching equipment receives micro- matte preparation method, its feature
It is：In step 3, the size of the submicron order etch pit is 0.6~1.5 μm, and it is between 350~1100nm spectrum
Reflectivity is 13~26%.
10. the diamond wire silicon chip according to claim 1 based on chain-type texture-etching equipment receives micro- matte preparation method, its feature
It is：In step 1, the diamond wire silicon chip is p-type polysilicon piece.
Priority Applications (1)
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| CN108336166A (en) * | 2018-04-11 | 2018-07-27 | 维科诚（苏州）光伏科技有限公司 | A kind of pre- fluff making device of diamond wire silicon chip |
| CN108447942A (en) * | 2018-03-09 | 2018-08-24 | 常州时创能源科技有限公司 | The polishing process for etching of the black silicon PERC batteries of polycrystalline |
| CN109659380A (en) * | 2018-12-17 | 2019-04-19 | 中节能太阳能科技（镇江）有限公司 | The preparation method of inverted pyramid flannelette and solar battery |
| CN110438571A (en) * | 2019-08-14 | 2019-11-12 | 中节能太阳能科技有限公司 | A kind of efficient monocrystalline process for etching and its equipment |
| CN110828611A (en) * | 2019-11-19 | 2020-02-21 | 南京纳鑫新材料有限公司 | Novel groove chain type combined black silicon suede preparation method |
| CN110846721A (en) * | 2019-10-12 | 2020-02-28 | 湖南理工学院 | Monocrystalline silicon texturing additive formula containing polyalcohol and PEG |
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| CN110828611A (en) * | 2019-11-19 | 2020-02-21 | 南京纳鑫新材料有限公司 | Novel groove chain type combined black silicon suede preparation method |
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