CN110828611A - Novel groove chain type combined black silicon suede preparation method - Google Patents
Novel groove chain type combined black silicon suede preparation method Download PDFInfo
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- CN110828611A CN110828611A CN201911131950.7A CN201911131950A CN110828611A CN 110828611 A CN110828611 A CN 110828611A CN 201911131950 A CN201911131950 A CN 201911131950A CN 110828611 A CN110828611 A CN 110828611A
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- 229910021418 black silicon Inorganic materials 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 48
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 47
- 239000010703 silicon Substances 0.000 claims abstract description 47
- 238000005406 washing Methods 0.000 claims abstract description 28
- 238000001035 drying Methods 0.000 claims abstract description 26
- 229910052709 silver Inorganic materials 0.000 claims abstract description 21
- 239000004332 silver Substances 0.000 claims abstract description 21
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000007747 plating Methods 0.000 claims abstract description 16
- 239000002253 acid Substances 0.000 claims abstract description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 14
- 239000003513 alkali Substances 0.000 claims abstract description 10
- 238000005498 polishing Methods 0.000 claims abstract description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 24
- 239000007788 liquid Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 22
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 18
- 239000008367 deionised water Substances 0.000 claims description 15
- 229910021641 deionized water Inorganic materials 0.000 claims description 15
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 229910003460 diamond Inorganic materials 0.000 claims description 6
- 239000010432 diamond Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 6
- 150000003841 chloride salts Chemical class 0.000 claims description 3
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 claims description 3
- 150000004673 fluoride salts Chemical class 0.000 claims description 3
- 238000005554 pickling Methods 0.000 claims description 3
- 230000001737 promoting effect Effects 0.000 claims description 3
- -1 silver ions Chemical class 0.000 claims description 3
- 229910001961 silver nitrate Inorganic materials 0.000 claims description 3
- 150000003568 thioethers Chemical class 0.000 claims description 3
- 239000013585 weight reducing agent Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 abstract description 42
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 description 4
- 239000003814 drug Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention relates to the technical field of manufacturing of high-efficiency solar polycrystalline batteries, and discloses a novel preparation method of a black silicon suede with a groove chain type combination, which comprises the following steps: s1: primarily polishing, silver plating and hole digging of the polycrystalline silicon wafer; s2: rinsing; s3: desilverizing; s4: rinsing again; s5: drying; s6: reaming; s7: washing with water; s8: alkali washing; s9: washing with water again; s10: acid washing; s11: and drying again. Wherein S1; s2; s3; s4; s5 is completed in a slot machine, S6; s7; s8; s9; s10; s11 is done in a chain machine. The novel preparation method of the black silicon suede combined with the groove chain type can improve the uniformity of suede structures on the surfaces of silicon wafers, can fully utilize the existing chain type suede making equipment, and greatly shortens the length of the equipment.
Description
Technical Field
The invention relates to the technical field of manufacturing of high-efficiency solar polycrystalline batteries, in particular to a novel preparation method of a black silicon suede with a groove chain type combination.
Background
As is well known, the conventional mortar sheet texturing is generally completed on a chain machine before the popularization of diamond wires, and thus, a chain type texturing device is very popular in battery manufacturing enterprises. With the popularization of diamond wire silicon wafers, the black silicon texturing technology gradually becomes the mainstream of the diamond wire polycrystalline silicon texturing technology by virtue of obvious advantages in efficiency and appearance, however, groove type equipment is required for black silicon texturing, and the characteristics of more equipment groove bodies, longer process flow, larger equipment volume, higher equipment cost and the like restrict the continuous popularization of the black silicon technology.
Disclosure of Invention
Technical problem to be solved
Aiming at the defects of the prior art, the invention provides a novel preparation method of a black silicon suede with a combined slot chain type, which has the advantages of being capable of preparing a micro-nano micro suede structure with uniform suede size and adjustable size and depth and the like, and solves the problems of more slot bodies, longer process flow, larger equipment volume and higher equipment cost of slot type equipment required by black silicon suede preparation.
(II) technical scheme
In order to realize the purpose of preparing the micro-nano micro suede structure with uniform suede size and adjustable size and depth on the premise of simplifying the conventional black silicon suede technology, the invention provides the following technical scheme: a novel preparation method of a black silicon suede with combined slot chain type comprises the following steps:
s1: primary polishing, silver plating and hole digging of the polycrystalline silicon wafer: placing a diamond wire polycrystalline silicon wafer into a functional groove integrated with throwing, plating and digging, wherein the functional groove is filled with etching liquid for promoting the reaction of the silicon wafer, and allowing the silicon wafer to fully react;
s2: rinsing: putting the silicon wafer treated in the step S1 into deionized water for rinsing;
s3: desilverizing: putting the silicon wafer processed in the step S2 into a desilvering tank to remove residual silver ions in the silicon wafer, wherein the desilvering tank is filled with auxiliary liquid;
s4: rinsing: putting the silicon wafer treated in the step S3 into deionized water for rinsing;
s5: drying: putting the silicon wafer processed in the step S4 into a drying groove for drying;
s6: reaming: putting the dried silicon wafer into a chain type machine for reaming treatment, wherein auxiliary liquid is filled in a reaming groove of the chain type machine;
s7: rinsing: putting the silicon wafer treated in the step S6 into deionized water for rinsing;
s8: alkali washing: and (4) putting the silicon wafer treated in the step S7 into an alkali-removing washing tank to rinse and remove the acid liquor remained in the step S6. The auxiliary liquid in the alkaline washing tank comprises but is not limited to hydrogen peroxide, ammonia water, sodium hydroxide or potassium hydroxide and the like;
s9: rinsing: putting the silicon wafer treated in the step S8 into deionized water for rinsing;
s10: acid washing: and (4) putting the silicon wafer treated in the step S9 into an acid washing tank for rinsing. The auxiliary liquid in the pickling tank comprises but is not limited to hydrofluoric acid, hydrochloric acid and hydrogen peroxide;
s11: and (5) drying again: and (4) rinsing the silicon wafer treated in the step S10 in deionized water, taking out, and drying in a drying groove to prepare the black silicon velvet dough sheet.
Preferably, several main functions of the preliminary polishing, silver plating, hole digging and silver removing in the steps of S1 and S3 are performed in a tank type machine, wherein the preliminary polishing, silver plating and hole digging are performed together in one functional tank.
Preferably, the process conditions of the functional tank in the step S1 are 30-82 ℃, the reaction lasts for 2-5min, when the silicon wafer is fully reacted, the weight reduction is controlled to be 0.15-0.6g, and the etching solution contains but is not limited to alkali, fluoride salt, silver nitrate, copper nitrate, chloride salt and sulfide salt.
Preferably, the steps of reaming, rinsing, alkali washing, rinsing, acid washing and the like of the residual polysilicon wafer dried after silver removal are completed on a chain machine.
Preferably, the rinsing time is 2 to 5min and the temperature is 20 to 60 ℃ in the S2 step, the S4 step, the S7 step, the S9 step and the S11 step.
Preferably, the auxiliary liquid in the desilvering tank in the step S3 includes, but is not limited to, hydrogen peroxide and ammonia water. Wherein the concentration of ammonia water is 1-5%, the concentration of hydrogen peroxide is 2-8%, and the time is 1-5 min.
Preferably, the drying time in the S5 step and the drying time in the S11 step are both 2-5min, and the temperature is both 45-80 ℃.
Preferably, the auxiliary liquid of the expanding slot in the step S6 includes, but is not limited to, nitric acid and hydrofluoric acid, wherein the concentration of nitric acid is 15-50%, and the concentration of hydrofluoric acid is 5-10%.
(III) advantageous effects
Compared with the prior art, the invention provides a novel preparation method of the black silicon suede combined with the slot chain type, which has the following beneficial effects:
according to the novel preparation method of the black silicon suede combined with the groove chain type, the existing chain type machine is combined with the groove type machine, the existing chain type texturing equipment is fully utilized, the length of the equipment is greatly shortened, and the investment cost of the equipment is reduced by about 40%. In the groove type machine part, three grooves of primary throwing, silver plating and hole digging are integrated, and the cost of the liquid medicine is reduced by more than 30 percent on the basis of further shortening the length of the equipment and reducing the cost of the equipment. And the desilvering silicon wafer is placed on a chain machine for reaming and acid washing, so that the uniformity of the texture surface structure on the surface of the silicon wafer is improved, the conversion efficiency of a battery is improved, and the fragment rate of the silicon wafer is reduced because the chain machine is relatively stable compared with a groove machine.
Drawings
FIG. 1 is a process flow diagram of the present invention;
FIG. 2 is an SEM photograph of the microstructure of the invention after slot machine processing;
FIG. 3 is an SEM micrograph of a microstructure of the present invention after chain machining;
FIG. 4 is an external view of a battery made of a black silicon matte of the present invention;
fig. 5 is a graph comparing the efficiency of cells prepared from the black silicon texturing sheet of the present invention with conventional black silicon cells.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-5, a novel method for preparing a black silicon suede with a combination of a slot chain type comprises the following steps:
s1: primary polishing, silver plating and hole digging of the polycrystalline silicon wafer: placing a diamond wire polycrystalline silicon wafer into a functional groove integrated with throwing, plating and digging, wherein the functional groove is filled with etching liquid for promoting the reaction of the silicon wafer, and allowing the silicon wafer to fully react;
s2: rinsing: putting the silicon wafer treated in the step S1 into deionized water for rinsing;
s3: desilverizing: putting the silicon wafer processed in the step S2 into a desilvering tank to remove residual silver ions in the silicon wafer, wherein the desilvering tank is filled with auxiliary liquid;
s4: rinsing: putting the silicon wafer treated in the step S3 into deionized water for rinsing;
s5: drying: putting the silicon wafer processed in the step S4 into a drying groove for drying;
s6: reaming: putting the dried silicon wafer into a chain type machine for reaming treatment, wherein auxiliary liquid is filled in a reaming groove of the chain type machine;
s7: rinsing: putting the silicon wafer treated in the step S6 into deionized water for rinsing;
s8: alkali washing: and (4) putting the silicon wafer treated in the step S7 into an alkali-removing washing tank to rinse and remove the acid liquor remained in the step S6. The auxiliary liquid in the alkaline washing tank comprises but is not limited to hydrogen peroxide, ammonia water, sodium hydroxide or potassium hydroxide and the like;
s9: rinsing: putting the silicon wafer treated in the step S8 into deionized water for rinsing;
s10: acid washing: and (4) putting the silicon wafer treated in the step S9 into an acid washing tank for rinsing. The auxiliary liquid in the pickling tank comprises but is not limited to hydrofluoric acid, hydrochloric acid and hydrogen peroxide;
s11: and (5) drying again: and (4) rinsing the silicon wafer treated in the step S10 in deionized water, taking out, and drying in a drying groove to prepare the black silicon velvet dough sheet.
The primary throwing, silver plating, hole digging and desilvering in the step S1 and the step S3 are completed in a tank type machine, so that the equipment cost and the liquid medicine cost are greatly reduced, wherein the primary throwing, silver plating and hole digging are completed in one functional tank.
And the process condition of the functional groove in the step S1 is that the reaction is carried out for 2-5min at the temperature of 30-82 ℃, the silicon wafer is fully reacted, the weight reduction is controlled to be 0.15-0.6g, and the etching solution contains but is not limited to alkali, fluoride salt, silver nitrate, copper nitrate, chloride salt and sulfide salt.
The steps of reaming, rinsing, alkaline washing, rinsing, acid washing and the like of the residual polycrystalline silicon chips dried after silver removal are completed on the chain machine, the functions of the chain machine are fully utilized, the uniformity of the aperture is improved, and the conversion efficiency of the battery is effectively improved.
In the step S2, the step S4, the step S7, the step S9 and the step S11, the rinsing time is 2-5min, and the temperature is 20-60 ℃.
The auxiliary liquid in the desilvering tank in the step S3 includes, but is not limited to, hydrogen peroxide and ammonia water. Wherein the concentration of ammonia water is 1-5%, the concentration of hydrogen peroxide is 2-8%, and the time is 1-5 min.
The drying time in the step S5 and the drying time in the step S11 are both 2-5min, and the temperature is both 45-80 ℃.
The auxiliary liquid of the reaming tank in the step S6 includes, but is not limited to, nitric acid and hydrofluoric acid, wherein the concentration of nitric acid is 15-50%, and the concentration of hydrofluoric acid is 5-10%.
In summary, the novel preparation method of the black silicon suede with the combination of the slot chain type completes the whole black silicon suede making by two sections, and the main functions of primary polishing, silver plating, hole digging and silver removing are completed in the slot type machine. And after the desilverized polycrystalline silicon wafer is dried, the polycrystalline silicon wafer enters a chain machine to complete the working procedures of reaming, rinsing, alkali washing, rinsing, acid washing and the like. And three functions of primary throwing, silver plating and hole digging are realized in the groove type machine by placing one functional groove, so that the length of the equipment is greatly reduced, the equipment cost is reduced, and in addition, along with the great reduction of the number of the groove bodies, the consumed chemicals in the groove bodies are also greatly reduced. On the basis of reducing the cost, the environmental pollution caused by chemicals is reduced. The chain machine has the advantages that the chain machine is relatively stable, and the water consumption is small, so that the chip rate of the polycrystalline silicon wafer and the efficiency of a subsequent battery piece are improved obviously.
It is to be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (8)
1. A novel preparation method of a black silicon suede with combined slot chain type is characterized in that: the method comprises the following steps:
s1: primary polishing, silver plating and hole digging of the polycrystalline silicon wafer: placing a diamond wire polycrystalline silicon wafer into a functional groove integrated with throwing, plating and digging, wherein the functional groove is filled with etching liquid for promoting the reaction of the silicon wafer, and allowing the silicon wafer to fully react;
s2: rinsing: putting the silicon wafer treated in the step S1 into deionized water for rinsing;
s3: desilverizing: putting the silicon wafer processed in the step S2 into a desilvering tank to remove residual silver ions in the silicon wafer, wherein the desilvering tank is filled with auxiliary liquid;
s4: rinsing: putting the silicon wafer treated in the step S3 into deionized water for rinsing;
s5: drying: putting the silicon wafer processed in the step S4 into a drying groove for drying;
s6: reaming: putting the dried silicon wafer into a chain type machine for reaming treatment, wherein auxiliary liquid is filled in a reaming groove of the chain type machine;
s7: rinsing: putting the silicon wafer treated in the step S6 into deionized water for rinsing;
s8: alkali washing: and (4) putting the silicon wafer treated in the step S7 into an alkali-removing washing tank to rinse and remove the acid liquor remained in the step S6. The auxiliary liquid in the alkaline washing tank comprises but is not limited to hydrogen peroxide, ammonia water, sodium hydroxide or potassium hydroxide and the like;
s9: rinsing: putting the silicon wafer treated in the step S8 into deionized water for rinsing;
s10: acid washing: and (4) putting the silicon wafer treated in the step S9 into an acid washing tank for rinsing. The auxiliary liquid in the pickling tank comprises but is not limited to hydrofluoric acid, hydrochloric acid and hydrogen peroxide;
s11: and (5) drying again: and (4) rinsing the silicon wafer treated in the step S10 in deionized water, taking out, and drying in a drying groove to prepare the black silicon velvet dough sheet.
2. The novel preparation method of the black silicon suede combined with the chain type of the slot as claimed in claim 1, wherein the method comprises the following steps: the primary throwing, silver plating, hole digging and desilvering in the step S1 and the step S3 are mainly carried out in a tank type machine, wherein the primary throwing, silver plating and hole digging are carried out together in one functional tank.
3. The novel preparation method of the black silicon suede combined with the chain type of the slot as claimed in claim 1, wherein the method comprises the following steps: and the process condition of the functional groove in the step S1 is that the reaction is carried out for 2-5min at the temperature of 30-82 ℃, the silicon wafer is fully reacted, the weight reduction is controlled to be 0.15-0.6g, and the etching solution contains but is not limited to alkali, fluoride salt, silver nitrate, copper nitrate, chloride salt and sulfide salt.
4. The novel preparation method of the black silicon suede combined with the chain type of the slot as claimed in claim 1, wherein the method comprises the following steps: and the steps of reaming, rinsing, alkali washing, rinsing, acid washing and the like of the rest of the polycrystalline silicon wafer dried after silver removal are finished on a chain machine.
5. The novel preparation method of the black silicon suede combined with the chain type of the slot as claimed in claim 1, wherein the method comprises the following steps: in the step S2, the step S4, the step S7, the step S9 and the step S11, the rinsing time is 2-5min, and the temperature is 20-60 ℃.
6. The novel preparation method of the black silicon suede combined with the chain type of the slot as claimed in claim 1, wherein the method comprises the following steps: the auxiliary liquid in the desilvering tank in the step S3 includes, but is not limited to, hydrogen peroxide and ammonia water. Wherein the concentration of ammonia water is 1-5%, the concentration of hydrogen peroxide is 2-8%, and the time is 1-5 min.
7. The novel preparation method of the black silicon suede combined with the chain type of the slot as claimed in claim 1, wherein the method comprises the following steps: the drying time in the step S5 and the drying time in the step S11 are both 2-5min, and the temperature is both 45-80 ℃.
8. The novel preparation method of the black silicon suede combined with the chain type of the slot as claimed in claim 1, wherein the method comprises the following steps: the auxiliary liquid of the reaming tank in the step S6 includes, but is not limited to, nitric acid and hydrofluoric acid, wherein the concentration of nitric acid is 15-50%, and the concentration of hydrofluoric acid is 5-10%.
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| CN114551644A (en) * | 2022-02-22 | 2022-05-27 | 江西中弘晶能科技有限公司 | Design of surface micron-nano composite structure for improving conversion efficiency of high-efficiency battery piece |
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