CN115820132A - Chain type alkali polishing process additive and application thereof - Google Patents
Chain type alkali polishing process additive and application thereof Download PDFInfo
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- CN115820132A CN115820132A CN202211474689.2A CN202211474689A CN115820132A CN 115820132 A CN115820132 A CN 115820132A CN 202211474689 A CN202211474689 A CN 202211474689A CN 115820132 A CN115820132 A CN 115820132A
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- 239000000654 additive Substances 0.000 title claims abstract description 50
- 230000000996 additive effect Effects 0.000 title claims abstract description 49
- 239000003513 alkali Substances 0.000 title claims abstract description 40
- 238000007517 polishing process Methods 0.000 title claims abstract description 35
- 238000005498 polishing Methods 0.000 claims abstract description 54
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 52
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 52
- 239000010703 silicon Substances 0.000 claims abstract description 52
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000008367 deionised water Substances 0.000 claims abstract description 29
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 29
- 239000000243 solution Substances 0.000 claims abstract description 28
- 238000006243 chemical reaction Methods 0.000 claims abstract description 20
- 239000012670 alkaline solution Substances 0.000 claims abstract description 13
- 239000008139 complexing agent Substances 0.000 claims abstract description 8
- 239000000080 wetting agent Substances 0.000 claims abstract description 8
- 239000002518 antifoaming agent Substances 0.000 claims abstract description 5
- 239000002585 base Substances 0.000 claims abstract 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 54
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 39
- 238000004140 cleaning Methods 0.000 claims description 28
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 21
- 239000002253 acid Substances 0.000 claims description 15
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 15
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 229910001868 water Inorganic materials 0.000 claims description 10
- 229910019142 PO4 Inorganic materials 0.000 claims description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 8
- 229960000583 acetic acid Drugs 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- 239000010452 phosphate Substances 0.000 claims description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 8
- 230000035484 reaction time Effects 0.000 claims description 8
- 238000005406 washing Methods 0.000 claims description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- 229920000289 Polyquaternium Polymers 0.000 claims description 6
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims description 6
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 6
- 229920000136 polysorbate Polymers 0.000 claims description 6
- 235000015165 citric acid Nutrition 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 5
- -1 polyimine Polymers 0.000 claims description 5
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 4
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 4
- 239000001630 malic acid Substances 0.000 claims description 4
- 235000011090 malic acid Nutrition 0.000 claims description 4
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical compound NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 claims description 3
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 3
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims description 3
- 229920002125 Sokalan® Polymers 0.000 claims description 3
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 3
- 239000001361 adipic acid Substances 0.000 claims description 3
- 235000011037 adipic acid Nutrition 0.000 claims description 3
- 150000008051 alkyl sulfates Chemical class 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- 150000001720 carbohydrates Chemical class 0.000 claims description 3
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical class OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 claims description 3
- 239000001913 cellulose Substances 0.000 claims description 3
- 229920002678 cellulose Polymers 0.000 claims description 3
- 150000003983 crown ethers Chemical class 0.000 claims description 3
- 239000012362 glacial acetic acid Substances 0.000 claims description 3
- 150000002460 imidazoles Chemical class 0.000 claims description 3
- 239000004310 lactic acid Substances 0.000 claims description 3
- 235000014655 lactic acid Nutrition 0.000 claims description 3
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims description 3
- 239000004584 polyacrylic acid Substances 0.000 claims description 3
- 239000001508 potassium citrate Substances 0.000 claims description 3
- 229960002635 potassium citrate Drugs 0.000 claims description 3
- QEEAPRPFLLJWCF-UHFFFAOYSA-K potassium citrate (anhydrous) Chemical compound [K+].[K+].[K+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O QEEAPRPFLLJWCF-UHFFFAOYSA-K 0.000 claims description 3
- 235000011082 potassium citrates Nutrition 0.000 claims description 3
- 239000001632 sodium acetate Substances 0.000 claims description 3
- 235000017281 sodium acetate Nutrition 0.000 claims description 3
- 239000001509 sodium citrate Substances 0.000 claims description 3
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 claims description 3
- 239000011975 tartaric acid Substances 0.000 claims description 3
- 235000002906 tartaric acid Nutrition 0.000 claims description 3
- 235000021317 phosphate Nutrition 0.000 claims 3
- 239000003002 pH adjusting agent Substances 0.000 claims 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 claims 1
- 150000003871 sulfonates Chemical class 0.000 claims 1
- 238000002310 reflectometry Methods 0.000 abstract description 10
- 239000000126 substance Substances 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 46
- 238000005303 weighing Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical group [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- UEZVMMHDMIWARA-UHFFFAOYSA-M phosphonate Chemical compound [O-]P(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-M 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 2
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 230000004580 weight loss Effects 0.000 description 2
- 239000013585 weight reducing agent Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000001488 sodium phosphate Substances 0.000 description 1
- 229910000162 sodium phosphate Inorganic materials 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000004065 wastewater treatment Methods 0.000 description 1
Images
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a chain type alkali polishing process additive and application thereof, wherein the chain type alkali polishing process additive comprises 0.1-6% of an accelerant, 0.1-2% of a complexing agent, 0.1-2% of a wetting agent, 0.05-1% of a defoaming agent, 0.1-3% of a pH regulator and deionized water, which are uniformly mixed to form an additive, the additive is added into an alkaline solution, the additive is prepared after uniform mixing, a silicon wafer is put into the polishing solution to complete a polishing reaction, substances which are easy to decompose and generate free radicals are used as the accelerant, so that the additive accelerates the reaction of inorganic alkali and silicon, the polishing capability of the polishing solution is enhanced, higher reflectivity and larger tower base can be obtained, and further the efficiency is improved.
Description
Technical Field
The invention relates to the technical field of solar cell silicon wafers, in particular to a chain type alkali polishing process additive and application thereof.
Background
Solar energy is taken as a green, clean and renewable energy source, more and more attention is paid to people, and a crystalline silicon solar cell is the most widely applied field of solar energy at present. In a manufacturing process of a crystalline silicon solar cell, in order to improve photoelectric conversion efficiency of the solar cell, polishing treatment is often performed on the back surface of a diffused silicon wafer, and a PN junction on the front surface of the silicon wafer is required to be not damaged. At present, the mainstream back polishing process mainly comprises an alkali polishing process and an acid polishing process, wherein the acid polishing process uses hydrofluoric acid, nitric acid, sulfuric acid and a water system to corrode a silicon wafer, the silicon wafer horizontally floats on the surface of polishing liquid when polished by the method, only the back of the silicon wafer is in contact reaction with the polishing liquid, and a PN junction on the front side cannot be damaged, but the reflectivity of the surface of the silicon wafer polished by the method is low, and the acid polishing process uses a large amount of acidic substances, so that the production cost and the waste liquid treatment cost are very high, and the method is not environment-friendly. The alkali polishing process mainly utilizes alkali to polish silicon wafers, such as organic alkali tetramethyl ammonium hydroxide and the like, and the method can obtain high back reflectivity, but has high cost and high wastewater treatment difficulty; if inorganic alkali such as potassium hydroxide or sodium hydroxide with low cost is used, the reaction rate difference between the inorganic alkali and silicon oxide is small, so that the silicon oxide protective layer on the front surface of the silicon wafer is corroded very easily during polishing, the PN junction on the front surface is damaged, and finally the battery fails.
The chain type alkali polishing process integrates the advantages of an acid polishing process and an alkali polishing process, the PN junction of the front surface cannot be damaged in the alkali polishing process, and inorganic alkali with low cost can be used to obtain high back surface reflectivity, so that higher efficiency is obtained. However, the chain type alkali polishing tank is not long generally due to the limitation of a field, so that the reaction time of alkali and the silicon wafer is short, and the accelerating capacity of the additive is high. In addition, because the silicon wafer is in a horizontally floating state during polishing, hydrogen generated by corrosion is difficult to timely separate from the silicon wafer, and the problem of bubble printing easily occurs in the appearance.
Disclosure of Invention
In order to solve the defects in the prior art, the invention provides a chain type alkali polishing process additive and application thereof.
In order to achieve the technical effects, the invention adopts the following scheme:
the chain type alkali polishing process additive comprises an accelerator, a complexing agent, a wetting agent, a defoaming machine, a pH regulator and deionized water, and comprises the following components in percentage by mass:
the balance being deionized water.
According to the preferable technical scheme, the accelerant comprises one or a composition of at least two of persulfate, hydrogen peroxide, imidazoles and crown ethers.
According to a preferred technical scheme, the complexing agent comprises one or a combination of at least two of phosphate, alcamines, aminocarboxylate, hydroxycarboxylic acid salt, organic phosphonate and polyacrylic acid.
According to a preferred technical scheme, the wetting agent comprises one or a composition of at least two of alkyl sulfate, sulfonate, phosphate, span and tween.
In a preferred embodiment, the defoaming agent comprises one or a combination of at least two of polyquaternium, polyimine, cellulose and saccharide.
In a preferred technical scheme, the pH regulator comprises one or a combination of at least two of citric acid, lactic acid, malic acid, tartaric acid, glacial acetic acid and acetic acid, adipic acid, phosphoric acid, hydrochloric acid, sodium citrate, potassium citrate, phosphate, sulfate, sodium acetate, potassium hydroxide and sodium hydroxide.
The application of the chain type alkali polishing process additive is characterized in that a proper amount of the chain type alkali polishing process additive is added into an alkaline solution, a polishing solution is prepared after the chain type alkali polishing process additive is uniformly mixed, and a silicon wafer is placed into the polishing solution to complete a polishing reaction.
According to the preferable technical scheme, the additive accounts for 0.5-2% of the total volume of the polishing solution, the alkaline solution is sodium hydroxide or potassium hydroxide solution, and the content of potassium hydroxide or sodium hydroxide in the polishing solution is 40-100 g/L.
In the preferable technical scheme, the temperature of the polishing reaction is 60-85 ℃, and the reaction time is 30-60 s; the silicon wafer is placed in a manner of floating on the surface of the polishing solution in a horizontal manner.
According to the preferred technical scheme, after the polishing reaction of the silicon wafer is finished, the silicon wafer is sequentially washed by deionized water, post-treated, washed by water, pickled and washed by water and then dried;
the post-treatment process comprises the steps of cleaning the mixture of 0.1-2% of KOH or NaOH and 1-8% of H2O2, wherein the cleaning temperature is 20-70 ℃, and the cleaning time is 30-60 s;
the acid cleaning process comprises the following steps of: HCl: cleaning with a mixed acid solution of H2O = 1.
Compared with the prior art, beneficial effect does:
by using substances which are easy to decompose and generate free radicals as an accelerant, the additive accelerates the reaction of inorganic alkali and silicon, enhances the polishing capacity of the polishing solution, can obtain higher reflectivity and larger tower footing, and further improves the efficiency; the complexing agent can complex the polishing solution and metal ions remained by cutting the silicon wafer, so that a composite center formed by metal doping is reduced; the wetting agent increases the contact between the polishing solution and the silicon wafer, so that the reaction is faster and more uniform; the defoaming agent can take away bubbles generated on the surface of the silicon wafer more quickly, improve the appearance and improve the reflectivity; the pH regulator can regulate the pH value of the additive, so that the additive is stable and safe.
Drawings
FIG. 1 shows a polished silicon wafer (left) of soda chain type alkali and a polished silicon wafer (right) of chain type alkali with additives;
FIG. 2 is an SEM photograph of a polished silicon wafer of soda chain type;
FIG. 3 SEM photograph of chain type alkali polished silicon wafer after additive addition.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
The chain type alkali polishing process additive comprises an accelerator, a complexing agent, a wetting agent, a defoaming machine, a pH regulator and deionized water, and comprises the following components in percentage by mass:
the balance being deionized water.
According to the preferable technical scheme, the accelerant comprises one or a composition of at least two of persulfate, hydrogen peroxide, imidazoles and crown ethers.
According to a preferred technical scheme, the complexing agent comprises one or a combination of at least two of phosphate, alcamines, aminocarboxylate, hydroxycarboxylic acid salt, organic phosphonate and polyacrylic acid.
According to a preferred technical scheme, the wetting agent comprises one or a composition of at least two of alkyl sulfate, sulfonate, phosphate, span and tween.
In a preferred embodiment, the defoaming agent comprises one or a combination of at least two of polyquaternium, polyimine, cellulose and saccharide.
In a preferred technical scheme, the pH regulator comprises one or a combination of at least two of citric acid, lactic acid, malic acid, tartaric acid, glacial acetic acid and acetic acid, adipic acid, phosphoric acid, hydrochloric acid, sodium citrate, potassium citrate, phosphate, sulfate, sodium acetate, potassium hydroxide and sodium hydroxide.
The application of the chain type alkali polishing process additive is characterized in that a proper amount of the chain type alkali polishing process additive is added into an alkaline solution, a polishing solution is prepared after the chain type alkali polishing process additive is uniformly mixed, and a silicon wafer is placed into the polishing solution to complete a polishing reaction.
According to the preferable technical scheme, the additive accounts for 0.5-2% of the total volume of the polishing solution, the alkaline solution is sodium hydroxide or potassium hydroxide solution, and the content of potassium hydroxide or sodium hydroxide in the polishing solution is 40-100 g/L.
In the preferable technical scheme, the temperature of the polishing reaction is 60-85 ℃, and the reaction time is 30-60 s; the silicon wafer is placed in a manner of floating on the surface of the polishing solution in a horizontal manner.
According to the preferred technical scheme, after the polishing reaction of the silicon wafer is finished, the silicon wafer is sequentially washed by deionized water, post-treated, washed by water, pickled and washed by water and then dried;
the post-treatment process comprises the steps of cleaning the mixture of 0.1-2% of KOH or NaOH and 1-8% of H2O2, wherein the cleaning temperature is 20-70 ℃, and the cleaning time is 30-60 s;
the acid cleaning process comprises the following steps of: HC l: cleaning with a mixed acid solution of H2O = 1.
Example 1
S1, preparing 2000mL of additive, wherein the additive comprises the following components: 5.0% of potassium persulfate, 0.5% of triethanolamine, 0.5% of tween, 2.0% of citric acid, 0.2% of polyquaternium and the balance of deionized water;
s2, weighing 6000g of potassium hydroxide, adding the potassium hydroxide into 100L of deionized water, and preparing an alkaline solution with the alkali concentration of 60 g/L;
s3, adding 2000mL of the additive obtained in the step S1 into the alkaline solution obtained in the step S2, and stirring and mixing uniformly to form a polishing solution;
s4, horizontally placing the silicon wafer on a small chain type alkali polishing machine with the back surface facing downwards, enabling a roller to drive the silicon wafer to advance, and controlling the temperature of a polishing reaction to be 70 ℃ and the reaction time to be 40S;
and S5, taking out the silicon wafer obtained in the step S4, and drying the silicon wafer after deionized water cleaning, post-treatment, deionized water cleaning, acid washing and deionized water cleaning in sequence.
Example 2
S1, preparing 2000mL of additive, wherein the additive comprises the following components: 4.0% of sodium persulfate, 0.5% of sodium phosphate, 0.5% of tween, 2.0% of citric acid, 1% of acetic acid, 0.2% of polyquaternium and the balance of deionized water;
s2, adding 6000g of sodium hydroxide into 100L of deionized water to prepare an alkaline solution with the alkali concentration of 60 g/L;
s3, adding 1500mL of the additive obtained in the step S1 into the alkaline solution obtained in the step S2, and stirring and mixing uniformly to form a polishing solution;
s4, horizontally placing the silicon wafer on a small chain type alkali polishing machine with the back surface facing downwards, enabling a roller to drive the silicon wafer to advance, and controlling the temperature of a polishing reaction to be 75 ℃ and the reaction time to be 40S;
and S5, taking out the silicon wafer obtained in the step S4, and drying the silicon wafer after deionized water cleaning, post-treatment, deionized water cleaning, acid washing and deionized water cleaning in sequence.
Example 3:
s1, preparing 2000mL of additive, wherein the additive comprises the following components: 3.0% of sodium persulfate, 0.2% of hydrogen peroxide, 0.5% of diethanolamine, 0.5% of tween, 2.0% of malic acid, 1% of acetic acid, 0.2% of polyquaternium and the balance of deionized water;
s2, weighing 5000g of sodium hydroxide, adding the sodium hydroxide into 100L of deionized water, and preparing an alkaline solution with the alkali concentration of 50 g/L;
s3, adding 1500mL of the additive obtained in the step S1 into the alkaline solution obtained in the step S2, and stirring and mixing uniformly to form a polishing solution;
s4, horizontally placing the silicon wafer on a small chain type alkali polishing machine with the back surface facing downwards, enabling a roller to drive the silicon wafer to move forward, and controlling the temperature of a polishing reaction to be 80 ℃ and the reaction time to be 35S;
and S5, taking out the silicon wafer obtained in the step S4, and drying the silicon wafer after deionized water cleaning, post-treatment, deionized water cleaning, acid washing and deionized water cleaning in sequence.
Control group 1
S1, weighing 5000g of sodium hydroxide, adding the sodium hydroxide into 100L of deionized water, and preparing alkaline polishing solution with the alkali concentration of 50 g/L;
s2, horizontally placing the silicon wafer on a small chain type alkali polishing machine with the back surface facing downwards, enabling a roller to drive the silicon wafer to advance, and controlling the temperature of a polishing reaction to be 80 ℃ and the reaction time to be 35S;
and S3, taking out the silicon wafer obtained in the step S2, and drying the silicon wafer after deionized water cleaning, post-treatment, deionized water cleaning, acid washing and deionized water cleaning in sequence.
Testing the reflectivity, weight loss and tower footing size change values of the silicon wafers prepared in the above examples 1-3 and the comparison group 1, wherein the reflectivity is measured by using a D8 reflectivity tester; weighing the weight reduction amount of the silicon wafer before and after polishing by using a balance for weight reduction; the size of the tower footing was obtained using a Zeta microscope and the results are shown in Table 1.
Table 1: examples 1-3 silicon wafer test results after polishing.
| Sample (I) | Weight loss per g | Reflectivity/%) | Tower footing/um |
| Example 1 | 0.07 | 43.5 | 3-4 |
| Example 2 | 0.06 | 43.1 | 2.5-3.5 |
| Example 3 | 0.08 | 44.6 | 4.8-5.3 |
| Control group 1 | 0.07 | 43.9 | 4.0-4.5 |
Comparing example 1 with example 2, it can be seen that under the same conditions, the reflectance after polishing is improved and the size of the foundation is increased with the increase of the additive.
As can be seen from comparison of example 3 with control 1, under the same conditions, the use of the additive resulted in an increase in reflectance and an increase in the size of the foundation after polishing compared to the use of no additive.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "top", "bottom", "inner", "outer", and the like, refer to orientations or positional relationships that are based on the orientations or positional relationships shown in the drawings, or the orientations or positional relationships that the products of the present invention are conventionally placed in use, or the orientations or positional relationships that are conventionally understood by those skilled in the art, and are used for convenience in describing and simplifying the description, but do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Claims (10)
1. The chain type alkali polishing process additive is characterized by comprising an accelerator, a complexing agent, a wetting agent, a defoaming machine, a PH regulator and deionized water, and comprises the following components in percentage by mass:
the balance being deionized water.
2. The chain base polishing process additive of claim 1, wherein the accelerator comprises one or a combination of at least two of persulfates, hydrogen peroxide, imidazoles, and crown ethers.
3. The chain base polishing process additive of claim 1, wherein the complexing agent comprises one of a phosphate, an alkanolamine, an aminocarboxylate, a hydroxycarboxylic acid salt, an organophosphonate, a polyacrylic acid, or a combination of at least two thereof.
4. The chain base polishing process additive of claim 1, wherein the wetting agent comprises one or a combination of at least two of alkyl sulfates, sulfonates, phosphates, spans, tweens.
5. The additive for chain base polishing processes according to claim 1 wherein the defoaming agent comprises one or a combination of at least two of polyquaternium, polyimine, cellulose, and saccharide.
6. The chain base polishing process additive of claim 1, wherein the pH adjusting agent comprises one or a combination of at least two of citric acid, lactic acid, malic acid, tartaric acid, glacial acetic acid and acetic acid, adipic acid, phosphoric acid, hydrochloric acid, sodium citrate, potassium citrate, phosphate, sulfate, sodium acetate, potassium hydroxide, sodium hydroxide.
7. The use of the additive for chain type alkaline polishing process according to claim 1, wherein a proper amount of the additive for chain type alkaline polishing process is added into an alkaline solution, the mixture is mixed uniformly to prepare a polishing solution, and a silicon wafer is put into the polishing solution to complete the polishing reaction.
8. The use of the additive for a chain type alkaline polishing process according to claim 7, wherein the additive is used in an amount of 0.5 to 2% based on the total volume of the polishing solution, and the alkaline solution is a sodium hydroxide or potassium hydroxide solution, wherein the content of potassium hydroxide or sodium hydroxide in the polishing solution is 40 to 100g/L.
9. The use of the additive for a chain-type base polishing process according to claim 7, wherein the temperature of the polishing reaction is 60-85 ℃ and the reaction time is 30-60 s; the silicon wafer is placed in a manner of floating on the surface of the polishing solution in a horizontal manner.
10. The use of the additive for a chain-type alkaline polishing process of claim 7, wherein after completion of the polishing reaction, the silicon wafer is sequentially subjected to deionized water cleaning, post-treatment, water washing, acid washing, water washing and then drying;
the post-treatment process comprises the steps of cleaning the mixture of 0.1-2% of KOH or NaOH and 1-8% of H2O2, wherein the cleaning temperature is 20-70 ℃, and the cleaning time is 30-60 s;
the acid cleaning process comprises the following steps of: HCl: cleaning with a mixed acid solution of H2O = 1.
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