CN110524398A - A kind of additive for the polishing of crystalline silicon acidity and acid polishing method - Google Patents
A kind of additive for the polishing of crystalline silicon acidity and acid polishing method Download PDFInfo
- Publication number
- CN110524398A CN110524398A CN201910819927.0A CN201910819927A CN110524398A CN 110524398 A CN110524398 A CN 110524398A CN 201910819927 A CN201910819927 A CN 201910819927A CN 110524398 A CN110524398 A CN 110524398A
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- China
- Prior art keywords
- polishing
- acid
- additive
- acidity
- crystalline silicon
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
Abstract
The present invention provides a kind of additive for the polishing of crystalline silicon acidity and acid polishing methods, polishing additive is by mass percentage, by following raw material components: 0.1%~5% sodium citrate, 0.1%~10% neopelex, 0.01%~1% sodium lignin sulfonate, 0.001%~1% kayexalate, the deionized water of surplus.This additive can promote the nitric acid of low concentration, hydrofluoric acid corrosive liquid to corrode silicon chip back side, can also promote corrosive liquid to the polishing effect of silicon chip back side, obtain more even curface.When being applied to crystal silicon chip polishing, excellent polishing effect is obtained with the acid concentration for throwing technique lower than conventional acid, subsequent acid solution additional amount is reduced, production cost can be greatly lowered.
Description
Technical field
The present invention relates to a kind of crystalline silicon acidity polishing additive and polishing methods, belong to manufacture of solar cells technology
Field.
Background technique
In crystal silicon solar batteries piece production process, in order to further enhance the performance and efficiency of cell piece, it will usually
Silicon chip back side is polished, makes the more smooth even up to mirror effect of silicon wafer back surface, the back side of silicon wafer is flat after back polishing
It is whole, it on the one hand can reinforce the reflection to transmitted light and reduce light transmittance, on the other hand aluminium paste can be made to contact with silicon chip surface
More sufficiently improve passivation effect.Electric current Isc and open-circuit voltage Uoc is set to be improved respectively by back surface polishing, thus
The transfer efficiency of solar battery can be improved.Currently, mainly making in the polishing production of industrialized crystal silicon solar batteries piece
With following three kinds of methods: the polishing of 1. tetramethylammonium hydroxide, the silicon wafer reflectivity that this method is prepared is higher, but medicine
Liquid cost and tail washings processing cost are higher, to the pollution of environment also than more serious.2. inorganic base polishes, the hydrogen of high concentration is used
Potassium oxide, sodium hydroxide are polished, and this method medical fluid is at low cost, and polishing effect is good, and effect on environment is also smaller, still
Its technique is unstable, the bad control of reaction process, while the alkali meeting positive silica of corrosion of silicon, so that front PN junction is destroyed,
Lead to battery failure；.3. nitric acid, hydrofluoric acid polish, this method medical fluid is at low cost, and polishing effect is also preferable, can use simultaneously
In the polishing of monocrystalline silicon and polysilicon solar cell.But it needs to be polished using the acid solution of high concentration in this way, a side
The acid solution of face high concentration was easy to cause quarter, influenced yields；On the other hand, acid concentration height causes the processing cost of tail washings to increase
Add.
Summary of the invention
To solve above-mentioned deficiency in the prior art, the present invention provides one kind to be able to ascend hydrofluoric acid, nitric acid polishing effect
The additive of rate.This additive can promote the nitric acid of low concentration, hydrofluoric acid corrosive liquid to corrode silicon chip back side, also
Corrosive liquid can be promoted to the polishing effect of silicon chip back side, obtain more even curface.It is polished being applied to crystal silicon chip
When, excellent polishing effect is obtained with the acid concentration for throwing technique lower than conventional acid, reduces subsequent acid solution additional amount, Neng Gou great
Amplitude reduction production cost.
To achieve the above object, the present invention is achieved by the following technical solutions:
A kind of additive for the polishing of crystalline silicon acidity, which is characterized in that raw material components content by mass percentage
Are as follows:
With the deionized water of surplus.
A kind of crystalline silicon acidity polishing method, which is characterized in that specific step is as follows:
One, polishing additive is prepared: by mass percentage, by following raw material components: 0.1%~5% citric acid
Sodium, 0.1%~10% neopelex, 0.01%~1% sodium lignin sulfonate, 0.001%~1% it is poly-
Sodium styrene sulfonate is added in the deionized water of surplus, is uniformly mixed and is made into polishing additive；
Two, prepare acid solution: polishing additive being poured into No.1 tempering tank, acid solution is poured into No. two
In tempering tank, the percent by volume of polishing additive and acid solution is 1:100~1:800；
Three, it prepares acid polishing slurry: polishing additive being divided into 3~6 equal portions, is first poured into a polishing additive
In acid solution, rock No. two tempering tanks to solution it is uniform after, then pour into second part, repetitive operation is until all polishing additions
Agent is finished down, and is configured to acid polishing slurry；
Four, acid polishing: the crystal silicon chip back side is immersed in acid polishing slurry and carries out surface polishing.
Further, the acid solution is that mass fraction is 2~6% hydrofluoric acid and mass fraction is 30~55%
Nitric acid.
Further, the temperature of the acid polishing slurry is 5 DEG C~15 DEG C.
Further, reaction time of the crystal silicon chip in acid polishing slurry is 30s~90s.
Compared with prior art, this has for the additive of crystalline silicon acidity polishing and acid polishing method with bet
Meaning point and advantage:
Lime light:, can be according to the feelings of loss of weight and reflectivity after every batch of polishing when being applied to large-scale industrial production
Condition adds polishing additive in right amount.It, can be according to loss of weight and reflection after every batch of polishing when being applied to large-scale industrial production
The case where rate, adds nitric acid and hydrofluoric acid in right amount.
Advantage one: the medical fluid of this acidity polishing method is at low cost, and polishing effect is preferable, can be used for simultaneously monocrystalline silicon and
The polishing of polysilicon solar cell.
Advantage two: it is rotten that the additive can promote the nitric acid of low concentration, hydrofluoric acid corrosive liquid to carry out silicon chip back side
Erosion can also promote corrosive liquid to the polishing effect of silicon chip back side, obtain more even curface.
Advantage three: when being applied to crystal silicon chip polishing, excellent throwing is obtained with the acid concentration for throwing technique lower than conventional acid
Light effect reduces subsequent acid solution additional amount, production cost can be greatly lowered.
Detailed description of the invention
Fig. 1 is the microscope photo of silicon chip surface burnishing surface obtained in embodiment 1,2；
Fig. 2 is the microscope photo of silicon chip surface burnishing surface obtained in embodiment 2；
Fig. 3 is the reflectance spectrum of silicon chip surface burnishing surface obtained in embodiment 1.
Specific embodiment
The present invention is further explained in the light of specific embodiments, but the scope of protection of the present invention is not limited thereto.
Embodiment 1
As shown in Figure 1 and Figure 2, crystalline silicon polishing additive is prepared, by 5g sodium citrate, 50g neopelex,
5g sodium lignin sulfonate, 2mL kayexalate are dissolved into 1L deionized water, obtain crystalline silicon polishing additive.It will
The nitric acid that 130L mass fraction is 67%, the hydrofluoric acid that 35L mass fraction is 49%, 74L deionized water and 1L are without crystalline silicon
It polishes solution additive to be uniformly mixed, obtains polishing fluid.Polishing fluid is cooled to 12 DEG C, then PSG silicon wafer will be gone to soak after diffusion
Entering in polishing fluid and polishes, polishing time 60s, resulting silicon wafer is 5~25 μm through scanning electron microscope detection etch pit width, and
Without other pattern impurity.
Embodiment 2
As shown in Figure 1, crystalline silicon polishing additive is prepared, and by 2.5g sodium citrate, 25g neopelex,
2.5g sodium lignin sulfonate, 1mL kayexalate are dissolved into 1L deionized water, obtain crystalline silicon polishing additive.It will
The nitric acid that 270L mass fraction is 67%, the hydrofluoric acid that 57L mass fraction is 49%, 64L deionized water and 1L are without crystalline silicon
It polishes solution additive to be uniformly mixed, obtains polishing fluid.Polishing fluid is cooled to 12 DEG C, then PSG silicon wafer will be gone to soak after diffusion
Entering in polishing fluid and polishes, polishing time 50s, resulting silicon wafer is 5~25 μm through scanning electron microscope detection etch pit width, and
Without other pattern impurity.
Embodiment 3
On the basis of embodiment 1, changing nitric acid dosage is 150L.
Embodiment 4
On the basis of embodiment 1, changing the edge polishing time is 80s.
Embodiment 5
On the basis of embodiment 1, changing polish temperature is 15 DEG C.
Embodiment 6
On the basis of embodiment 2, changing nitric acid dosage is 200L.
Embodiment 7
On the basis of embodiment 2, changing polishing time is 90s.
Embodiment 8
On the basis of embodiment 2, changing edge polishing temperature is 10 DEG C.
Performance test
Monocrystalline silicon piece obtained in above-described embodiment 1~8 is subjected to reflectivity and corrosion thickness test, test method is such as
Under:
Reflectivity is tested on 8 degree of flannelette integration type reflectivity measurement instruments of standard of model Raditech D8；
It first weighs a lower silicon slice before making herbs into wool in the balance, claims a lower silicon slice after making herbs into wool again, obtain loss of weight amount, then with loss of weight amount
Corrosion thickness is obtained multiplied by original thickness divided by original weight amount；
Test result see the table below
| Embodiment | Reflectivity (%) | Corrosion thickness (μm) |
| Embodiment 1 | 40.2 | 9.9 |
| Embodiment 2 | 40.5 | 10.1 |
| Embodiment 3 | 40.7 | 9.8 |
| Embodiment 4 | 40.3 | 10.2 |
| Embodiment 5 | 40.1 | 10.0 |
| Embodiment 6 | 40.4 | 9.9 |
| Embodiment 7 | 40.6 | 10.1 |
| Embodiment 8 | 40.5 | 10.2 |
In conclusion crystalline silicon acidity polishing additive raw material dosage of the invention is few, simple process, and it is obtained outer
It sees and Erosion Width is good.
Above-described embodiment is only used for illustrating inventive concept of the invention, rather than the restriction to rights protection of the present invention,
It is all to be made a non-material change to the present invention using this design, protection scope of the present invention should all be fallen into.
Claims (5)
1. a kind of additive for the polishing of crystalline silicon acidity, which is characterized in that raw material components content by mass percentage are as follows:
With the deionized water of surplus.
2. a kind of crystalline silicon acidity polishing method, which is characterized in that specific step is as follows:
One, polishing additive is prepared: by mass percentage, by following raw material components: 0.1%~5% sodium citrate,
0.1%~10% neopelex, 0.01%~1% sodium lignin sulfonate, 0.001%~1% polyphenyl second
Alkene sodium sulfonate, is added in the deionized water of surplus, is uniformly mixed and is made into polishing additive；
Two, prepare acid solution: polishing additive being poured into No.1 tempering tank, acid solution is poured into No. two tempering tanks
Interior, the percent by volume of polishing additive and acid solution is 1:100~1:800；
Three, it prepares acid polishing slurry: polishing additive is divided into 3~6 equal portions, be first poured into a polishing additive acid molten
In liquid, rock No. two tempering tanks to solution it is uniform after, then pour into second part, repetitive operation until whole polishing additives are finished down,
It is configured to acid polishing slurry；
Four, acid polishing: the crystal silicon chip back side is immersed in acid polishing slurry and carries out surface polishing.
3. a kind of crystalline silicon acidity polishing method according to claim 2, which is characterized in that the acid solution is matter
Amount score is 2~6% hydrofluoric acid and mass fraction is 30~55% nitric acid.
4. a kind of crystalline silicon acidity polishing method according to claim 2, which is characterized in that the acid polishing slurry
Temperature is 5 DEG C~15 DEG C.
5. a kind of crystalline silicon acidity polishing method according to claim 2, which is characterized in that crystal silicon chip is polished in acidity
Reaction time in liquid is 30s~90s.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910819927.0A CN110524398A (en) | 2019-08-31 | 2019-08-31 | A kind of additive for the polishing of crystalline silicon acidity and acid polishing method |
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| CN201910819927.0A CN110524398A (en) | 2019-08-31 | 2019-08-31 | A kind of additive for the polishing of crystalline silicon acidity and acid polishing method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111254497A (en) * | 2020-03-20 | 2020-06-09 | 常州时创能源股份有限公司 | Additive for preparing porous pyramid structure by secondary texture-making of monocrystalline silicon piece and application of additive |
| CN112877784A (en) * | 2019-12-24 | 2021-06-01 | 武汉宜田科技发展有限公司 | Additive for silicon wafer texturing by alkali liquor |
| CN114351258A (en) * | 2022-01-11 | 2022-04-15 | 江苏捷捷半导体新材料有限公司 | High-reflectivity monocrystalline silicon wafer alkali polishing additive, preparation method and application thereof |
| CN114262941B (en) * | 2022-03-01 | 2022-05-17 | 北京通美晶体技术股份有限公司 | Etching method for single-side germanium wafer |
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| CN102586888A (en) * | 2012-03-15 | 2012-07-18 | 苏州先拓光伏科技有限公司 | Non-alcoholic monocrystalline silicon flock making additive |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112877784A (en) * | 2019-12-24 | 2021-06-01 | 武汉宜田科技发展有限公司 | Additive for silicon wafer texturing by alkali liquor |
| CN111254497A (en) * | 2020-03-20 | 2020-06-09 | 常州时创能源股份有限公司 | Additive for preparing porous pyramid structure by secondary texture-making of monocrystalline silicon piece and application of additive |
| CN111254497B (en) * | 2020-03-20 | 2021-06-25 | 常州时创能源股份有限公司 | Additive for preparing porous pyramid structure by secondary texture-making of monocrystalline silicon piece and application of additive |
| CN114351258A (en) * | 2022-01-11 | 2022-04-15 | 江苏捷捷半导体新材料有限公司 | High-reflectivity monocrystalline silicon wafer alkali polishing additive, preparation method and application thereof |
| CN114262941B (en) * | 2022-03-01 | 2022-05-17 | 北京通美晶体技术股份有限公司 | Etching method for single-side germanium wafer |
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Application publication date: 20191203 |