CN111254497B - Additive for preparing porous pyramid structure by secondary texture-making of monocrystalline silicon piece and application of additive - Google Patents
Additive for preparing porous pyramid structure by secondary texture-making of monocrystalline silicon piece and application of additive Download PDFInfo
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- CN111254497B CN111254497B CN202010201512.XA CN202010201512A CN111254497B CN 111254497 B CN111254497 B CN 111254497B CN 202010201512 A CN202010201512 A CN 202010201512A CN 111254497 B CN111254497 B CN 111254497B
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 46
- 239000000654 additive Substances 0.000 title claims abstract description 35
- 230000000996 additive effect Effects 0.000 title claims abstract description 35
- 239000002202 Polyethylene glycol Substances 0.000 claims abstract description 14
- 229910017053 inorganic salt Inorganic materials 0.000 claims abstract description 14
- 229920001223 polyethylene glycol Polymers 0.000 claims abstract description 14
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000004094 surface-active agent Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 10
- 229920001467 poly(styrenesulfonates) Polymers 0.000 claims abstract description 10
- 229940006186 sodium polystyrene sulfonate Drugs 0.000 claims abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000243 solution Substances 0.000 claims description 33
- 239000003513 alkali Substances 0.000 claims description 19
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 12
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 6
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical group [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 6
- 229920000604 Polyethylene Glycol 200 Polymers 0.000 claims description 3
- 229920002556 Polyethylene Glycol 300 Polymers 0.000 claims description 3
- 229920002593 Polyethylene Glycol 800 Polymers 0.000 claims description 3
- 229940113115 polyethylene glycol 200 Drugs 0.000 claims description 3
- 229940068886 polyethylene glycol 300 Drugs 0.000 claims description 3
- 229940085675 polyethylene glycol 800 Drugs 0.000 claims description 3
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Substances [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 claims description 3
- 229910000027 potassium carbonate Inorganic materials 0.000 claims description 3
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 3
- 239000011780 sodium chloride Substances 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 238000005034 decoration Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Weting (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses an additive for preparing a porous pyramid structure by secondary texturing of a monocrystalline silicon wafer, which comprises the following components in percentage by mass: 0.1-10% of sodium polystyrene sulfonate, 2-20% of polyethylene glycol, 1-5% of fluorocarbon surfactant, 20-30% of inorganic salt and the balance of water. The additive is added into the texturing solution for secondary texturing of the monocrystalline silicon piece, so that a porous pyramid structure can be formed on the surface of the monocrystalline silicon piece. The method for preparing the monocrystalline silicon piece porous pyramid structure is lower in cost and simpler in process.
Description
Technical Field
The invention relates to the field of photovoltaics, and in particular relates to an additive for preparing a porous pyramid structure by secondary texture surface making of monocrystalline silicon pieces and application thereof.
Background
The existing monocrystalline silicon wafer is often prepared with a textured surface with a pyramid structure, and in order to further improve the light trapping effect of the textured surface, a porous pyramid structure is a new research direction.
The application number 201110252280.1 discloses a preparation method of a porous pyramid-shaped silicon surface light trapping structure for a solar cell, which mainly comprises the step of carrying out noble metal nanoparticle catalytic etching treatment on a monocrystalline silicon wafer with a pyramid structure after primary texturing to form the porous pyramid structure on the surface of the monocrystalline silicon wafer.
The application number 201310467811.8 discloses a preparation method of a porous pyramid antireflection structure, which mainly comprises the step of performing reactive ion etching treatment on a monocrystalline silicon wafer with a pyramid structure after primary texturing to form a porous pyramid structure on the surface of the monocrystalline silicon wafer.
The Chinese patent with the application number of 201010611615.X discloses a manufacturing method of a porous pyramid structure on a monocrystalline silicon substrate, which is mainly used for carrying out plasma immersion ion implantation treatment on a monocrystalline silicon wafer with the pyramid structure after one-time texturing to enable the surface of the monocrystalline silicon wafer to form the porous pyramid structure.
The above methods for preparing porous pyramid structures all have the defects of high cost and complex process, so that a new method for preparing porous pyramid structures of monocrystalline silicon wafers needs to be further found.
Disclosure of Invention
The invention aims to provide an additive for preparing a porous pyramid structure by secondary texturing of a monocrystalline silicon piece and application thereof.
In order to achieve the purpose, the invention provides an additive for preparing a porous pyramid structure by secondary texture surface making of a monocrystalline silicon piece, which comprises the following components in percentage by mass: 0.1-10% of sodium polystyrene sulfonate, 2-20% of polyethylene glycol, 1-5% of fluorocarbon surfactant, 20-30% of inorganic salt and the balance of water.
Preferably, the additive for preparing the porous pyramid structure by secondary texture surface making of the monocrystalline silicon wafer comprises the following components in percentage by mass: 2-3% of sodium polystyrene sulfonate, 5-8% of polyethylene glycol, 2-3% of fluorocarbon surfactant, 20-25% of inorganic salt and the balance of water.
Preferably, the polyethylene glycol is selected from one or more of polyethylene glycol-200, polyethylene glycol-300 and polyethylene glycol-800.
Preferably, the inorganic salt is selected from NaCl and Na2CO3、KCl、K2CO3One or more of them.
The invention also provides a texturing solution for preparing the porous pyramid structure by secondary texturing of the monocrystalline silicon wafer, which contains an alkali solution and the additive, wherein the mass ratio of the additive to the alkali solution is 1-3: 100, and the alkali solution is an inorganic alkali aqueous solution.
Preferably, the alkali solution is 0.5-3.0 wt% of sodium hydroxide or potassium hydroxide aqueous solution.
The invention also provides a method for preparing the porous pyramid structure by using the monocrystalline silicon wafer, which comprises the steps of firstly, performing primary texture surface making on the monocrystalline silicon wafer to form the pyramid structure on the surface of the monocrystalline silicon wafer; and performing secondary texturing on the monocrystalline silicon wafer subjected to primary texturing by using the texturing solution to form a porous pyramid structure on the surface of the monocrystalline silicon wafer.
Preferably, the secondary texturing specifically comprises the following steps:
1) preparing an additive: adding 0.1-10% of sodium polystyrene sulfonate, 2-20% of polyethylene glycol, 1-5% of fluorocarbon surfactant and 20-30% of inorganic salt into the balance of water, and uniformly mixing to prepare an additive;
2) preparing a texturing solution: adding the additive prepared in the step 1) into an alkali solution, and uniformly mixing to prepare a texturing solution; the mass ratio of the additive to the alkali solution is 1-3: 100; the alkali solution is an inorganic alkali aqueous solution;
3) and (3) immersing the monocrystalline silicon wafer subjected to primary texturing into the texturing solution prepared in the step 2) for secondary texturing, wherein the texturing temperature of the secondary texturing is 72-79 ℃, and the texturing time of the secondary texturing is 120-150 s.
The invention has the advantages and beneficial effects that: the additive is added into the texturing solution for secondary texturing of the monocrystalline silicon wafer, so that the surface of the monocrystalline silicon wafer can form a porous pyramid structure. The method for preparing the monocrystalline silicon piece porous pyramid structure is lower in cost and simpler in process.
When the additive is added into the texturing solution during secondary texturing, the additive has the following effects:
the added fluorocarbon surfactant and polyethylene glycol can reduce the surface tension of the solution, improve the wettability of the solution on the pyramid surface, reduce bubbles on the surface of the silicon wafer, easily fall off from the surface of the silicon wafer, prevent the generation of bubble marks and obtain the silicon wafer with good appearance; the added inorganic salt can change the ion concentration in the solution, effectively control the etching rate of alkali on the suede pyramids, inhibit the occurrence of excessive etching and uneven etching, and obtain the appearance with good appearance; the added sodium polystyrene sulfonate can be directionally adsorbed on the surface of the pyramid to induce and generate a porous structure; the invention can control the aperture size of the porous structure by adjusting the proportion of the fluorocarbon surfactant and the polyethylene glycol, thereby adjusting the reflectivity of the silicon wafer; the added inorganic salt can improve the regularity of the porous structure, improve the uniformity of the microstructure and prevent the silicon wafer from generating local chromatic aberration.
Drawings
FIG. 1 is a scanning electron microscope image of the surface texture of a monocrystalline silicon wafer after one-time texture making;
FIG. 2 is a scanning electron microscope image of the surface texture of the monocrystalline silicon wafer after the secondary texture making.
Detailed Description
The following description of the embodiments of the present invention will be made with reference to the accompanying drawings. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
As shown in fig. 1 and fig. 2, the invention provides a method for preparing a porous pyramid structure from a monocrystalline silicon wafer, which comprises the steps of firstly performing primary texture surface making on the monocrystalline silicon wafer to form a pyramid structure on the surface of the monocrystalline silicon wafer; secondly, carrying out secondary texturing on the monocrystalline silicon wafer subjected to primary texturing by using a texturing solution added with an additive to form a porous pyramid structure on the surface of the monocrystalline silicon wafer;
the secondary texturing comprises the following specific steps:
1) preparing an additive: adding 0.1-10% of sodium polystyrene sulfonate, 2-20% of polyethylene glycol, 1-5% of fluorocarbon surfactant and 20-30% of inorganic salt into the balance of water, and uniformly mixing to prepare an additive;
the polyethylene glycol is selected from one or more of polyethylene glycol-200, polyethylene glycol-300 and polyethylene glycol-800;
the inorganic salt is selected from NaCl and Na2CO3、KCl、K2CO3One or more of the above;
2) preparing a texturing solution: adding the additive prepared in the step 1) into an alkali solution, and uniformly mixing to prepare a texturing solution; the mass ratio of the additive to the alkali solution is 1-3: 100; the aqueous alkali is 0.5-3.0 wt% of sodium hydroxide or potassium hydroxide aqueous solution;
3) and (3) immersing the monocrystalline silicon wafer subjected to primary texturing into the texturing solution prepared in the step 2) for secondary texturing, wherein the texturing temperature of the secondary texturing is 72-79 ℃, and the texturing time of the secondary texturing is 120-150 s.
In the step 1), the preferable formula of the additive is as follows: adding 2-3% of sodium polystyrene sulfonate, 5-8% of polyethylene glycol, 2-3% of fluorocarbon surfactant and 20-25% of inorganic salt into the balance of water, and uniformly mixing to prepare the additive.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the technical principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (4)
1. The additive for preparing the porous pyramid structure by secondary texture surface making of the monocrystalline silicon piece is characterized by comprising the following components in percentage by mass: 0.1-10% of sodium polystyrene sulfonate, 2-20% of polyethylene glycol, 1-5% of fluorocarbon surfactant, 20-30% of inorganic salt and the balance of water;
the polyethylene glycol is selected from one or more of polyethylene glycol-200, polyethylene glycol-300 and polyethylene glycol-800;
the inorganic salt is selected from NaCl and Na2CO3、KCl、K2CO3One or more of them.
2. The additive for preparing the porous pyramid structure by secondary texturing of the monocrystalline silicon wafer according to claim 1 is characterized by comprising the following components in percentage by mass: 2-3% of sodium polystyrene sulfonate, 5-8% of polyethylene glycol, 2-3% of fluorocarbon surfactant, 20-25% of inorganic salt and the balance of water.
3. The texture-making liquid for preparing the porous pyramid structure by secondary texture-making of the monocrystalline silicon piece is characterized by comprising an alkali solution and the additive disclosed by claim 1 or 2, wherein the mass ratio of the additive to the alkali solution is 1-3: 100; the alkali solution is 0.5-3.0 wt% sodium hydroxide or potassium hydroxide aqueous solution.
4. The method for preparing the porous pyramid structure by using the monocrystalline silicon wafer is characterized in that the monocrystalline silicon wafer is subjected to primary texture surface making to form the pyramid structure on the surface of the monocrystalline silicon wafer; secondly, carrying out secondary texturing on the monocrystalline silicon wafer subjected to primary texturing by using a texturing solution added with an additive to form a porous pyramid structure on the surface of the monocrystalline silicon wafer;
the secondary texturing comprises the following specific steps:
1) preparing an additive: adding 0.1-10% of sodium polystyrene sulfonate, 2-20% of polyethylene glycol, 1-5% of fluorocarbon surfactant and 20-30% of inorganic salt into the balance of water, and uniformly mixing to prepare an additive;
2) preparing a texturing solution: adding the additive prepared in the step 1) into an alkali solution, and uniformly mixing to prepare a texturing solution; the mass ratio of the additive to the alkali solution is 1-3: 100; the aqueous alkali is 0.5-3.0 wt% of sodium hydroxide or potassium hydroxide aqueous solution;
3) and (3) immersing the monocrystalline silicon wafer subjected to primary texturing into the texturing solution prepared in the step 2) for secondary texturing, wherein the texturing temperature of the secondary texturing is 72-79 ℃, and the texturing time of the secondary texturing is 120-150 s.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111663186A (en) * | 2020-06-30 | 2020-09-15 | 常州时创能源股份有限公司 | Additive for texturing of diamond wire cut monocrystalline silicon wafer and application thereof |
| CN112458540A (en) * | 2020-10-27 | 2021-03-09 | 山西潞安太阳能科技有限责任公司 | Solar single crystal texturing process |
| CN113529174A (en) * | 2021-07-01 | 2021-10-22 | 常州时创能源股份有限公司 | Texturing method and application of monocrystalline silicon wafer |
| CN113529173B (en) * | 2021-07-14 | 2023-07-28 | 西安蓝桥新能源科技有限公司 | Two-step texturing additive for preparing multi-layer pyramid monocrystalline silicon suede and application thereof |
| CN114232105B (en) * | 2021-10-29 | 2024-05-07 | 江苏顺风新能源科技有限公司 | P-type monocrystalline silicon texturing method |
| CN114318550A (en) * | 2021-12-15 | 2022-04-12 | 嘉兴市小辰光伏科技有限公司 | Additive for secondary texturing of monocrystalline silicon and texturing process thereof |
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| US9061494B2 (en) * | 2007-07-19 | 2015-06-23 | The Board Of Trustees Of The University Of Illinois | High resolution electrohydrodynamic jet printing for manufacturing systems |
| CN101661972B (en) * | 2009-09-28 | 2011-07-20 | 浙江大学 | Process for manufacturing monocrystalline silicon solar cell texture with low surface reflectivity |
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