CN103894362A - Method for cleaning coating film reworked sheet - Google Patents

Method for cleaning coating film reworked sheet Download PDF

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Publication number
CN103894362A
CN103894362A CN201410011499.6A CN201410011499A CN103894362A CN 103894362 A CN103894362 A CN 103894362A CN 201410011499 A CN201410011499 A CN 201410011499A CN 103894362 A CN103894362 A CN 103894362A
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China
Prior art keywords
silicon chip
normal temperature
sheet
cleaned
deionized water
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Pending
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CN201410011499.6A
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Chinese (zh)
Inventor
苗丽燕
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Zhejiang Jinko Solar Co Ltd
Jinko Solar Co Ltd
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Zhejiang Jinko Solar Co Ltd
Jinko Solar Co Ltd
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Priority to CN201410011499.6A priority Critical patent/CN103894362A/en
Publication of CN103894362A publication Critical patent/CN103894362A/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/048—Overflow-type cleaning, e.g. tanks in which the liquid flows over the tank in which the articles are placed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration

Abstract

The invention discloses a method for cleaning a coating film reworked sheet. The method comprises the following steps that (1) the coating film reworked sheet is placed in an HF solution of 10wt% to 20wt% and soaked for 900 s to 1800 s; (2) a silicon wafer is placed in deionized water at the normal temperature and cleaned for 200 s to 300 s in a bubbling mode; (3) the silicon wafer is placed in a mixed solution of H2O2 and NH4OH, the temperature is controlled between 65 DEG C and 85 DEG C, and the reaction time ranges from 15 s to 200 s; (4) the silicon wafer is placed in the deionized water at the normal temperature and cleaned for 200 s to 300 s in an overflowing mode; (5) the silicon wafer is placed in an HF solution of 5wt%, reacts for 210 s at the normal temperature and is cleaned through the deionized water for 200 s to 300 s twice in an overflowing mode, taken out and spin-dried. The production procedure of the method is simple, remaining particles on the surface of a SiNx thin film and the surface of the silicon wafer can be removed, the appearance and the performance of a battery prepared through the reworked sheet are optimized, and the production efficiency and the quality efficiency can be improved.

Description

The do over again cleaning method of sheet of a kind of plated film
Technical field
The present invention relates to a kind of cleaning method of plated film sheet, be specifically related to the do over again cleaning method of sheet of a kind of plated film.
Background technology
At present, solar cell is the device of directly realizing opto-electronic conversion, in order effectively to utilize luminous energy, conventionally at its surface deposition SiNx(silicon nitride) as antireflective coating.In conventional crystal silicon solar energy battery production process, adopt PECVD(plasma reinforced chemical vapour deposition) deposition SiNx antireflective film, due to restriction and the processing procedure control problem of filming equipment, all have a certain proportion of plated film sheet (thickness, refractive index anomaly and bad order etc.) of doing over again, the plated film sheet ratio of doing over again is about 1%～5%.
For the do over again processing of sheet of plated film, the general processing step adopting is: (1) sheet of doing over again is immersed in HF solution, removes the SiNx rete of silicon chip surface deposition; (2) silicon chip is put into deionized water, bubbling, overflow are cleaned, cleaning silicon wafer surface; (3) making herbs into wool again; (4) again prepare cell piece via diffusion, PSG, PECVD and silkscreen process.Compared to the cell piece of former preparation, adopt the battery film clips sheet ratio of preparing after the sheet of doing over again after this kind of method cleaned high, poor-performing, will affect and produce line yield.
Trace it to its cause, adopt merely after HF solution removal SiNx film, silicon chip surface still can residual certain foreign ion and particle, forms complex centre, affects battery performance; In addition, the sheet of doing over again becomes large through the matte hole that making herbs into wool forms again, and inhomogeneous, is easy to cause flower sheet.
Summary of the invention
Technical problem to be solved by this invention is to provide the do over again cleaning method of sheet of a kind of plated film, production procedure is simple, can remove the residual particle of SiNx film and silicon chip surface, optimize outward appearance and performance that the sheet of doing over again is prepared battery, improve production efficiency and quality efficiency.
The technical scheme that technical solution problem of the present invention adopts is: the do over again cleaning method of sheet of a kind of plated film, it is characterized in that, and comprise the steps:
(1) plated film is done over again sheet is put into the HF solution of 10wt%～20wt%, soaks 900～1800s, removes the silicon nitride film layer of silicon chip surface deposition;
(2) silicon chip is put into the deionized water of normal temperature, bubbling cleans 200～300s;
(3) silicon chip is put into H 2o 2and NH 4the mixed solution of OH, controls temperature at 65～85 DEG C, and reaction time 15～200s, removes ion and particle that silicon chip surface adheres to, and improve matte pattern;
(4) silicon chip is put into the deionized water of normal temperature, 200～300s is cleaned in overflow;
(5) silicon chip is put into the HF solution of the 5wt% of normal temperature, normal-temperature reaction 210s, removes oxide layer, makes silicon chip surface be hydrophobicity;
(6) silicon chip is put into the de-ionized water tank I of normal temperature, 200～300s is cleaned in overflow;
(7) silicon chip is put into the de-ionized water tank II of normal temperature, 200～300s is cleaned in overflow again;
(8) take out silicon chip, adopt drier to dry, the drying time is 300～400s.
Preferential as one, the H described in step (3) 2o 2and NH 4in the mixed solution of OH, contain 13wt%～25wt%H 2o 2, 5wt%～15wt%NH 4oH, 0.1wt%～5wt% surfactant and 65 wt%～75wt% deionized water.
The present invention adopts the H of proper proportion 2o 2and NH 4the mixed solution of OH can oxide etch silicon chip, because its reaction property is anisotropic reactive, can suitably increase surface roughness, makes silicon chip obtain good matte pattern.Chemical equation is as follows:
Figure 758282DEST_PATH_IMAGE002
Figure 572654DEST_PATH_IMAGE004
Figure 395117DEST_PATH_IMAGE006
At H 2o 2and NH 4in the mixed solution of OH, add a small amount of surfactant to contribute to reduce solution surface tension, improve the uniformity of reaction.Therefore, on doing over again the basis of sheet cleaning method, routine introduces H 2o 2and NH 4oH Aqueous Solution Cleaning Technology, the plated film that the forms a kind of improvement sheet cleaning method of doing over again, solves the plated film sheet of doing over again and again prepares performance and the problem of appearance of cell piece.Adopt the silicon chip of processing of the present invention, without making herbs into wool again again, also simplified production procedure.
The invention has the beneficial effects as follows: adopt the present invention can remove SiNx film and the residual particle of silicon chip surface, optimize outward appearance and performance that the sheet of doing over again is prepared battery, improved yield efficiency and quality efficiency.Solved do over again film clips sheet and the poor problem of battery performance, silicon chip, without making herbs into wool again, has been simplified production procedure.
Detailed description of the invention
Embodiment 1: the do over again cleaning method of sheet of a kind of plated film, comprises the steps:
(1) plated film is done over again sheet is put into the HF solution of 15wt%, soaks 1200s, removes the silicon nitride film layer of silicon chip surface deposition;
(2) silicon chip is put into the deionized water of normal temperature, bubbling cleans 200s;
(3) silicon chip is put into H 2o 2and NH 4the mixed solution of OH, it contains 14wt%H 2o 2, 14wt%NH 4oH, 1wt% surfactant and 71wt% deionized water, control temperature at 75 DEG C, and reaction time 100s, removes ion and particle that silicon chip surface adheres to, and improve matte pattern;
(4) silicon chip is put into the deionized water of normal temperature, 200s is cleaned in overflow;
(5) silicon chip is put into the HF solution of the 5wt% of normal temperature, normal-temperature reaction 210s, removes oxide layer, makes silicon chip surface be hydrophobicity;
(6) silicon chip is put into the de-ionized water tank I of normal temperature, 200s is cleaned in overflow;
(7) silicon chip is put into the de-ionized water tank II of normal temperature, 200s is cleaned in overflow again;
(8) take out silicon chip, adopt drier to dry, the drying time is 300s.
Embodiment 2: the do over again cleaning method of sheet of another kind of plated film, comprises the steps:
(1) plated film is done over again sheet is put into the HF solution of 10wt%, soaks 900s, removes the silicon nitride film layer of silicon chip surface deposition;
(2) silicon chip is put into the deionized water of normal temperature, bubbling cleans 250s;
(3) silicon chip is put into H 2o 2and NH 4the mixed solution of OH, it contains 13wt%H 2o 2, 7wt%NH 4oH, 5wt% surfactant and 75wt% deionized water, control temperature at 85 DEG C, and reaction time 50s, removes ion and particle that silicon chip surface adheres to, and improve matte pattern;
(4) silicon chip is put into the deionized water of normal temperature, 250s is cleaned in overflow;
(5) silicon chip is put into the HF solution of the 5wt% of normal temperature, normal-temperature reaction 210s, removes oxide layer, makes silicon chip surface be hydrophobicity;
(6) silicon chip is put into the de-ionized water tank I of normal temperature, 250s is cleaned in overflow;
(7) silicon chip is put into the de-ionized water tank II of normal temperature, 300s is cleaned in overflow again;
(8) take out silicon chip, adopt drier to dry, the drying time is 400s.
Embodiment 3: the do over again cleaning method of sheet of another plated film, comprises the steps:
(1) plated film is done over again sheet is put into the HF solution of 20wt%, soaks 1800s, removes the silicon nitride film layer of silicon chip surface deposition;
(2) silicon chip is put into the deionized water of normal temperature, bubbling cleans 300s;
(3) silicon chip is put into H 2o 2and NH 4the mixed solution of OH, it contains 20wt%H 2o 2, 12wt%NH 4oH, 3wt% surfactant and 65wt% deionized water, control temperature at 65 DEG C, and reaction time 200s, removes ion and particle that silicon chip surface adheres to, and improve matte pattern;
(4) silicon chip is put into the deionized water of normal temperature, 200s is cleaned in overflow;
(5) silicon chip is put into the HF solution of the 5wt% of normal temperature, normal-temperature reaction 210s, removes oxide layer, makes silicon chip surface be hydrophobicity;
(6) silicon chip is put into the de-ionized water tank I of normal temperature, 300s is cleaned in overflow;
(7) silicon chip is put into the de-ionized water tank II of normal temperature, 250s is cleaned in overflow again;
(8) take out silicon chip, adopt drier to dry, the drying time is 350s.

Claims (2)

1. the plated film cleaning method for sheet of doing over again, is characterized in that, in turn includes the following steps:
(1) plated film is done over again sheet is put into the HF solution of 10wt%～20wt%, soaks 900～1800s, removes the silicon nitride film layer of silicon chip surface deposition;
(2) silicon chip is put into the deionized water of normal temperature, bubbling cleans 200～300s;
(3) silicon chip is put into H 2o 2and NH 4the mixed solution of OH, controls temperature at 65～85 DEG C, and reaction time 15～200s, removes ion and particle that silicon chip surface adheres to, and improve matte pattern;
(4) silicon chip is put into the deionized water of normal temperature, 200～300s is cleaned in overflow;
(5) silicon chip is put into the HF solution of the 5wt% of normal temperature, normal-temperature reaction 210s, removes oxide layer, makes silicon chip surface be hydrophobicity;
(6) silicon chip is put into the de-ionized water tank I of normal temperature, 200～300s is cleaned in overflow;
(7) silicon chip is put into the de-ionized water tank II of normal temperature, 200～300s is cleaned in overflow again;
(8) take out silicon chip, adopt drier to dry, the drying time is 300～400s.
2. a kind of plated film as claimed in claim 1 cleaning method of sheet of doing over again, is characterized in that: the H described in step (3) 2o 2and NH 4in the mixed solution of OH, contain 13wt%～25wt%H 2o 2, 5wt%～15wt%NH 4oH, 0.1wt%～5wt% surfactant and 65wt%～75wt% deionized water.
CN201410011499.6A 2014-01-10 2014-01-10 Method for cleaning coating film reworked sheet Pending CN103894362A (en)

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105470108A (en) * 2015-09-28 2016-04-06 阳光大地（福建）新能源有限公司 Rework processing method of solar cell diffusion-blackened sheet
CN106299023A (en) * 2016-08-26 2017-01-04 奥特斯维能源（太仓）有限公司 A kind of anti-PID solaode is done over again the processing method of sheet
CN106847991A (en) * 2016-12-28 2017-06-13 东方环晟光伏（江苏）有限公司 The minimizing technology of blue-black point after a kind of photovoltaic silicon wafer diffusion
CN108655089A (en) * 2018-03-27 2018-10-16 上海申和热磁电子有限公司 The cleaning minimizing technology of 12 inches of monocrystalline silicon tray surface aluminium nitride films of semiconductor
CN109513677A (en) * 2018-10-09 2019-03-26 东莞市希尔金属材料有限公司 Silk-screen sapphire strip cleaning method
CN109713079A (en) * 2018-12-12 2019-05-03 苏州润阳光伏科技有限公司 A kind of monocrystalline PERC plated film is done over again the cleaning method of piece
CN110993485A (en) * 2019-11-27 2020-04-10 江苏富乐德半导体科技有限公司 Surface passivation method of silicon nitride ceramic copper-clad substrate
CN112563372A (en) * 2020-12-11 2021-03-26 山东力诺太阳能电力股份有限公司 Surface passivation process for crystalline silicon solar cell

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CN103400890A (en) * 2013-07-08 2013-11-20 浙江晶科能源有限公司 Reworking technology for striping re-plating of crystal silicon solar cell PECVD (plasma enhanced chemical vapor deposition) chromatic aberration slice

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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105470108A (en) * 2015-09-28 2016-04-06 阳光大地（福建）新能源有限公司 Rework processing method of solar cell diffusion-blackened sheet
CN106299023A (en) * 2016-08-26 2017-01-04 奥特斯维能源（太仓）有限公司 A kind of anti-PID solaode is done over again the processing method of sheet
CN106299023B (en) * 2016-08-26 2017-12-22 奥特斯维能源（太仓）有限公司 A kind of anti-PID solar cells are done over again the processing method of piece
CN106847991A (en) * 2016-12-28 2017-06-13 东方环晟光伏（江苏）有限公司 The minimizing technology of blue-black point after a kind of photovoltaic silicon wafer diffusion
CN106847991B (en) * 2016-12-28 2018-05-11 东方环晟光伏（江苏）有限公司 The minimizing technology of blue-black point after a kind of photovoltaic silicon wafer diffusion
CN108655089A (en) * 2018-03-27 2018-10-16 上海申和热磁电子有限公司 The cleaning minimizing technology of 12 inches of monocrystalline silicon tray surface aluminium nitride films of semiconductor
CN109513677A (en) * 2018-10-09 2019-03-26 东莞市希尔金属材料有限公司 Silk-screen sapphire strip cleaning method
CN109513677B (en) * 2018-10-09 2020-06-19 东莞市希尔金属材料有限公司 Screen printing sapphire deplating and cleaning method
CN109713079A (en) * 2018-12-12 2019-05-03 苏州润阳光伏科技有限公司 A kind of monocrystalline PERC plated film is done over again the cleaning method of piece
CN110993485A (en) * 2019-11-27 2020-04-10 江苏富乐德半导体科技有限公司 Surface passivation method of silicon nitride ceramic copper-clad substrate
CN112563372A (en) * 2020-12-11 2021-03-26 山东力诺太阳能电力股份有限公司 Surface passivation process for crystalline silicon solar cell

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Application publication date: 20140702