CN109750353B - Auxiliary agent for inverted pyramid texturing of monocrystalline silicon wafer and application thereof - Google Patents
Auxiliary agent for inverted pyramid texturing of monocrystalline silicon wafer and application thereof Download PDFInfo
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- CN109750353B CN109750353B CN201910191904.XA CN201910191904A CN109750353B CN 109750353 B CN109750353 B CN 109750353B CN 201910191904 A CN201910191904 A CN 201910191904A CN 109750353 B CN109750353 B CN 109750353B
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Abstract
The invention provides an auxiliary agent for inverted pyramid texturing of a monocrystalline silicon piece and application thereof, wherein the auxiliary agent comprises the following components: polyaspartic acid, betaine, polyvinyl alcohol, gelatin, fluorocarbon surfactant and water. The auxiliary agent can be added with an acidic texturing solution containing metal ions to assist the texturing solution in texturing the monocrystalline silicon wafer; the auxiliary agent can control the direction and speed of hole digging and hole expanding during the wool making, can also improve the defoaming effect and the solution wettability, and can remove the microstructure, thereby obtaining the inverted pyramid suede with good appearance, uniform structure and high wool yield.
Description
Technical Field
The invention relates to an auxiliary agent for inverted pyramid texturing of a monocrystalline silicon wafer and application thereof.
Background
The metal-assisted texturing method is already applied to the polycrystalline silicon wafer to be mature as an effective method for solving the texturing difficulty of the diamond wire silicon wafer, and a plurality of battery manufacturers on the market prepare the polycrystalline black silicon by adopting the method. However, the metal-assisted method has poor effect when being used on the monocrystalline silicon wafer, the monocrystalline silicon wafer textured by the metal-assisted method often has poor appearances such as bubble marks, stuck marks and the like, and the prepared inverted pyramid structure has different sizes and low texturing rate. The monocrystalline silicon wafer prepared by the metal auxiliary method can obtain an inverted pyramid structure, and has the advantages of low reflectivity, high battery efficiency and high CTM compared with the regular pyramid structure obtained by the currently and generally adopted alkali corrosion method. Therefore, it is imperative to solve the structural and appearance problems of inverted pyramids.
Disclosure of Invention
The invention aims to provide an auxiliary agent for texturing a monocrystalline silicon piece in an inverted pyramid manner and application thereof, wherein the auxiliary agent can be added with an acidic texturing solution containing metal ions to assist the texturing solution in texturing the monocrystalline silicon piece; the auxiliary agent can control the direction and speed of hole digging and hole expanding during the wool making, can also improve the defoaming effect and the solution wettability, and can remove the microstructure, thereby obtaining the inverted pyramid suede with good appearance, uniform structure and high wool yield.
In order to achieve the aim, the invention provides an auxiliary agent for texturing a monocrystalline silicon piece by an inverted pyramid, which comprises the following components in percentage by mass: 0.5-1% of polyaspartic acid, 0.2-0.5% of betaine, 1-3% of polyvinyl alcohol, 1-3% of gelatin, 0.2-0.5% of fluorocarbon surfactant and the balance of water.
Preferably, the water is deionized water.
The invention also provides a texturing solution for texturing the inverted pyramid of the monocrystalline silicon wafer, which comprises the following components: acid solution, metal ions, and the above-mentioned adjuvants; the metal ions are one or more of gold, silver, copper, iron and nickel ions.
Preferably, the acid solution is mixed with 5 to 30 percent of HF aqueous solution and 2 to 20 percent of H2O2Aqueous solution of HF containing 49% of HF, H2O2The aqueous solution contained 30% H2O2(ii) a Wherein the percentage is the mass percentage.
Preferably, the mass ratio of the metal ions to the acid solution is 0.5-5: 100.
Preferably, the mass ratio of the adjuvant to the acid solution is 0.3-1.5: 100.
The invention also provides an inverted pyramid texturing method of the monocrystalline silicon piece, which is characterized in that the texturing solution is adopted to carry out surface texturing on the monocrystalline silicon piece, and an inverted pyramid texturing surface is formed on the surface of the monocrystalline silicon piece.
Preferably, the inverted pyramid texturing method for the single crystal silicon wafer includes the following steps:
1) preparing an auxiliary agent: adding 0.5-1% of polyaspartic acid, 0.2-0.5% of betaine, 1-3% of polyvinyl alcohol, 1-3% of gelatin and 0.2-0.5% of fluorocarbon surfactant into the balance of water, and uniformly mixing to prepare an auxiliary agent;
2) preparing a texturing solution: adding the adjuvant prepared in the step 1) into an acid solution containing metal ions, and uniformly mixing to prepare a texturing solution;
3) texturing: immersing the monocrystalline silicon wafer into the texturing solution prepared in the step 2) for surface texturing, and forming an inverted pyramid textured surface on the surface of the monocrystalline silicon wafer.
Preferably, the surface texturing temperature in the step 3) is 10-40 ℃, and the texturing time is 50-200 s.
The invention has the advantages and beneficial effects that: the auxiliary agent for texturing the inverted pyramid of the monocrystalline silicon piece and the application thereof are provided, the auxiliary agent can be added with an acidic texturing solution containing metal ions, and the texturing solution is assisted to perform texturing on the monocrystalline silicon piece; the auxiliary agent can control the direction and speed of hole digging and hole expanding during the wool making, can also improve the defoaming effect and the solution wettability, and can remove the microstructure, thereby obtaining the inverted pyramid suede with good appearance, uniform structure and high wool yield.
The auxiliary agent of the invention has the following characteristics:
1) the auxiliary agent can influence the texturing reaction process, control the direction and speed of hole digging and hole expanding, and obtain the inverted pyramid textured surface with uniformity and high texturing rate.
2) The auxiliary agent can effectively improve the appearance of the textured monocrystalline silicon piece, avoid the appearance defects of bubble marks, stuck point marks and the like of the textured monocrystalline silicon piece, ensure that the overall appearance of the monocrystalline silicon piece is uniform and has no color difference, reduce the reflectivity and improve the current and the battery efficiency. Through production line verification, the battery efficiency is higher than that of the current positive pyramid by more than 0.1%.
The polyaspartic acid and the gelatin can react with metal to reduce the potential difference between the metal and the electrode on the silicon surface, thereby reducing the speed of hole digging and hole expanding of the metal. Meanwhile, polyvinyl alcohol has a dispersing effect on metal, and the occurrence of connecting holes and deep holes is avoided. The combined action of the three components can ensure that the inverted pyramid structure is uniform and the fluff yield is high. The betaine and the fluorocarbon surfactant reduce the surface tension of the solution, increase the wettability of the solution, reduce bubbles on the surface of the silicon wafer, and are easy to fall off from the surface of the silicon wafer, so that the generation of bubble marks and latch marks is avoided, and the silicon wafer with uniform and good appearance is obtained.
Drawings
FIG. 1 is a scanning electron microscope image of a textured surface of a monocrystalline silicon wafer after texturing;
FIG. 2 is a photograph showing the appearance of a single crystal silicon wafer after texturing.
Detailed Description
The following description of the embodiments of the present invention will be made with reference to the accompanying drawings. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
The technical scheme of the specific implementation of the invention is as follows:
an inverted pyramid texturing method of a monocrystalline silicon wafer comprises the following specific steps:
1) preparing an auxiliary agent: adding 0.5-1% of polyaspartic acid, 0.2-0.5% of betaine, 1-3% of polyvinyl alcohol, 1-3% of gelatin and 0.2-0.5% of fluorocarbon surfactant into the balance of water, and uniformly mixing to prepare an auxiliary agent;
2) preparing a texturing solution: adding the adjuvant prepared in the step 1) into an acid solution containing metal ions, and uniformly mixing to prepare a texturing solution;
the acid solution is mixed with 5 to 30 percent of HF aqueous solution and 2 to 20 percent of H2O2Aqueous solution of HF containing 49% of HF, H2O2The aqueous solution contained 30% H2O2(ii) a Wherein, the percentage is the mass percentage;
the metal ions are one or more of gold, silver, copper, iron and nickel ions;
the mass ratio of the metal ions to the acid solution is 0.5-5: 100;
the mass ratio of the auxiliary agent to the acid solution is 0.3-1.5: 100;
3) texturing: immersing the monocrystalline silicon wafer into the texturing solution prepared in the step 2) for surface texturing, and forming an inverted pyramid textured surface on the surface of the monocrystalline silicon wafer; the surface texturing temperature is 10-40 ℃, and the texturing time is 50-200 s.
Preferably, the water in step 1) is deionized water.
FIG. 1 is a scanning electron microscope image of a textured surface of a monocrystalline silicon wafer after texturing; FIG. 2 is a photograph showing the appearance of a single crystal silicon wafer after texturing; as can be seen from FIGS. 1 and 2, the textured monocrystalline silicon wafer has good appearance (no bubble mark or click mark), uniform structure, and high texture yield.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the technical principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (9)
1. The auxiliary agent for the inverted pyramid texturing of the monocrystalline silicon piece is characterized by comprising the following components in percentage by mass: 0.5-1% of polyaspartic acid, 0.2-0.5% of betaine, 1-3% of polyvinyl alcohol, 1-3% of gelatin, 0.2-0.5% of fluorocarbon surfactant and the balance of water.
2. The auxiliary for reverse pyramidal texturing of a single-crystal silicon wafer according to claim 1, wherein said water is deionized water.
3. The texture etching liquid for inverted pyramid texture etching of the monocrystalline silicon wafer is characterized by comprising the following components in parts by weight: an acid solution, metal ions, and the adjuvant of claim 1 or 2; the metal ions are one or more of gold, silver, copper, iron and nickel ions.
4. The texturing solution for inverse pyramid texturing of a single-crystal silicon wafer according to claim 3, wherein the acid solution is mixed with 5 to 30% of an HF aqueous solution and 2 to 20% of H2O2Aqueous solution of HF containing 49% of HF, H2O2The aqueous solution contained 30% H2O2(ii) a Wherein the percentage is the mass percentage.
5. The texturing solution for inverted pyramid texturing of a single-crystal silicon wafer according to claim 4, wherein the mass ratio of the metal ions to the acid solution is 0.5 to 5: 100.
6. The texturing solution for inverse pyramid texturing of a single-crystal silicon wafer according to claim 5, wherein the mass ratio of the adjuvant to the acid solution is 0.3 to 1.5: 100.
7. An inverted pyramid texturing method of a single crystal silicon wafer, characterized in that the texturing liquid according to any one of claims 3 to 6 is used to perform surface texturing on the single crystal silicon wafer to form an inverted pyramid textured surface on the surface of the single crystal silicon wafer.
8. The inverted pyramid texturing method of a single-crystal silicon wafer according to claim 7, characterized by comprising the steps of:
1) preparing an auxiliary agent: adding 0.5-1% of polyaspartic acid, 0.2-0.5% of betaine, 1-3% of polyvinyl alcohol, 1-3% of gelatin and 0.2-0.5% of fluorocarbon surfactant into the balance of water, and uniformly mixing to prepare an auxiliary agent;
2) preparing a texturing solution: adding the adjuvant prepared in the step 1) into an acid solution containing metal ions, and uniformly mixing to prepare a texturing solution;
3) texturing: immersing the monocrystalline silicon wafer into the texturing solution prepared in the step 2) for surface texturing, and forming an inverted pyramid textured surface on the surface of the monocrystalline silicon wafer.
9. The inverted pyramid texturing method of a single-crystal silicon wafer according to claim 8, wherein the texturing temperature in the step 3) is 10 to 40 ℃ and the texturing time is 50 to 200 seconds.
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| CN110257072A (en) * | 2019-06-13 | 2019-09-20 | 常州时创能源科技有限公司 | Silicon wafer one texture-etching side and etching edge additive and its application |
| CN112251817B (en) * | 2019-07-05 | 2022-08-05 | 松山湖材料实验室 | Inverted pyramid auxiliary texturing additive and application thereof |
| CN111593412B (en) * | 2020-05-25 | 2021-03-30 | 常州时创能源股份有限公司 | Additive for chain type texture surface making of monocrystalline silicon piece and application thereof |
| CN113913188B (en) * | 2021-12-14 | 2022-02-25 | 绍兴拓邦电子科技有限公司 | Monocrystalline silicon texturing agent and preparation method of textured monocrystalline silicon |
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| DE102009007136A1 (en) * | 2009-02-02 | 2010-08-12 | Sovello Ag | Etching mixture for producing a structured surface on silicon substrates |
| CN103132079B (en) * | 2013-02-07 | 2015-07-08 | 睿纳能源科技（上海）有限公司 | Additive for acid texturing of diamond-wire-cutting polycrystalline silicon slices and application method thereof |
| CN103668467B (en) * | 2013-12-20 | 2016-08-31 | 常州时创能源科技有限公司 | A kind of polycrystalline silicon texturing additive and application thereof |
| CN103993360B (en) * | 2014-06-09 | 2016-08-24 | 常州时创能源科技有限公司 | Polycrystalline silicon texturing adjuvant and application thereof |
| CN104120495A (en) * | 2014-07-10 | 2014-10-29 | 上海应用技术学院 | A texturing liquid used for monocrystalline silicon surface texturing and a preparing method thereof |
| CN106119976B (en) * | 2016-08-19 | 2018-08-14 | 常州时创能源科技有限公司 | Additive and its application of the black silicon making herbs into wool of polycrystalline with reaming acid solution |
| CN106119977B (en) * | 2016-08-29 | 2018-10-16 | 常州时创能源科技有限公司 | Fine-hair maring using monocrystalline silicon slice additive and application |
| CN106222756A (en) * | 2016-09-30 | 2016-12-14 | 杭州飞鹿新能源科技有限公司 | Additive and application process thereof for diamond wire cutting fine-hair maring using monocrystalline silicon slice |
| CN107658221B (en) * | 2017-09-19 | 2020-12-08 | 南京纳鑫新材料有限公司 | Texturing method for diamond wire cutting polycrystalline silicon wafer |
| CN108193281B (en) * | 2018-03-09 | 2020-06-09 | 常州时创能源股份有限公司 | Polycrystalline black silicon texturing process |
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