CN107245761B - Diamond wire polycrystalline silicon slice texturing auxiliary agent and application thereof - Google Patents
Diamond wire polycrystalline silicon slice texturing auxiliary agent and application thereof Download PDFInfo
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- CN107245761B CN107245761B CN201710679711.XA CN201710679711A CN107245761B CN 107245761 B CN107245761 B CN 107245761B CN 201710679711 A CN201710679711 A CN 201710679711A CN 107245761 B CN107245761 B CN 107245761B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The invention provides a texturing auxiliary agent for texturing a diamond wire polycrystalline silicon wafer. The invention also provides a texturing solution for texturing the diamond wire polycrystalline silicon wafer, which contains an acid solution and the diamond wire polycrystalline silicon wafer texturing auxiliary agent. The invention also provides a texturing method of the diamond wire polycrystalline silicon wafer, which is used for texturing the surface of the diamond wire polycrystalline silicon wafer by using the texturing liquid. The diamond wire polycrystalline silicon wafer texturing auxiliary agent influences the texturing reaction process, improves the texturing rate, reduces the texturing difference between a wire mark area and a non-wire mark area, effectively improves the appearance of the diamond wire polycrystalline silicon wafer, greatly weakens the light reflection and the wire mark on the surface of the silicon wafer, can reduce the reflectivity, improves the battery efficiency, is equal to or higher than the efficiency of a mortar sheet, and accordingly solves the application problem of the diamond wire polycrystalline silicon wafer.
Description
Technical Field
The invention relates to a diamond wire polycrystalline silicon slice texturing auxiliary agent and application thereof, belonging to the technical field of polycrystalline silicon slice texturing.
Background
The cutting cost of the diamond wire cutting polycrystalline silicon wafer is 0.3-0.7 yuan lower than that of a mortar wafer, so that the mortar polycrystalline wafer is urgently switched to a diamond wire polycrystalline wafer in the market. However, texturing of diamond wire polycrystalline silicon wafers is a great problem. Because the damaged layer of the diamond wire polycrystalline silicon wafer is shallow, the difference between the line mark area and the non-line mark area is large, the silicon wafer surface is seriously reflected and has low wool output rate and high reflectivity after being subjected to wool etching by adopting conventional acid, the efficiency is low after the battery piece is manufactured, and the appearance cannot pass. Other methods such as plasma dry etching (RIE), metal induced wet black silicon (MCCE), mechanical damage, etc. can solve the appearance and efficiency problems of diamond wire chips, but all have the problems of high manufacturing cost, complex process and equipment replacement.
Based on the above problems, if the texturing auxiliary agent can be directly added into the acid solution to solve the problems of appearance, efficiency and the like of the diamond wire polycrystalline silicon wafer, the method is not only most convenient, but also has the lowest cost increase, and has important significance for the development of polycrystalline batteries.
Disclosure of Invention
The invention aims to provide a texturing auxiliary agent for a diamond wire polycrystalline silicon wafer and application thereof, wherein the texturing auxiliary agent is applied to the texturing manufacture of the diamond wire polycrystalline silicon wafer, so that a silicon wafer with high texturing rate and unobvious reflection and line marks can be obtained, the appearance of the diamond wire polycrystalline silicon wafer is effectively improved, and meanwhile, the reflectivity is reduced; the diamond wire polycrystalline silicon wafer texturing auxiliary agent influences the texturing reaction process, reduces the reaction difference between the wire mark area and the non-wire mark area, can effectively improve the appearance of a silicon wafer, effectively reduces the reflectivity, and improves the battery efficiency, thereby solving the application problem of diamond wire polycrystalline silicon wafers.
In order to achieve the purpose, the invention provides a diamond wire polycrystalline silicon wafer texturing auxiliary agent which comprises the following components in percentage by mass: polyacrylic acid: 0.5-2%, polyoxyethylene lauryl ether: 0.1% -0.5%, ammonium citrate: 1 to 3 percent of the total weight of the paint, and the balance of water.
Preferably, the water is deionized water.
The invention also provides a texturing solution for texturing the diamond wire polycrystalline silicon wafer, which contains an acid solution and the diamond wire polycrystalline silicon wafer texturing auxiliary agent, wherein the mass ratio of the diamond wire polycrystalline silicon wafer texturing auxiliary agent to the acid solution is 0.1-2: 100; the acid solution is mixed with 5 to 15 percent of HF aqueous solution and 20 to 60 percent of HNO3An aqueous solution; the HF aqueous solution contains 49% of HF and HNO3The aqueous solution contains 69% of HNO3(ii) a Wherein the percentage is mass percent.
The invention also provides a texturing method of the diamond wire polycrystalline silicon wafer, which is used for texturing the surface of the diamond wire polycrystalline silicon wafer by using the texturing liquid.
Preferably, the surface texturing temperature is 5-30 ℃, and the texturing time is 20-150 s.
The texturing method of the diamond wire polycrystalline silicon wafer comprises the following specific steps:
1) preparing a texturing auxiliary agent: adding polyacrylic acid with the mass percentage of 0.5-2%, lauryl alcohol polyoxyethylene ether with the mass percentage of 0.1-0.5% and ammonium citrate with the mass percentage of 1-3% into the rest of water, and uniformly mixing to prepare a texturing auxiliary agent;
2) preparing a texturing solution: adding the texturing auxiliary prepared in the step 1) into an acid solution, and uniformly mixing to prepare a texturing solution; the mass ratio of the texturing auxiliary agent to the acid solution is 0.1-2: 100; the acid solution is mixed with 5 to 15 percent of HF aqueous solution and 20 to 60 percent of HNO3An aqueous solution; the HF aqueous solution contains 49% of HF and HNO3The aqueous solution contains 69% of HNO3(ii) a Wherein the percentage is mass percentage;
3) immersing the diamond wire polycrystalline silicon wafer into the texturing liquid prepared in the step 2) for surface texturing, wherein the texturing temperature is 5-30 ℃, and the texturing time is 20-150 s.
The invention has the advantages and beneficial effects that: the texturing auxiliary agent is applied to the texturing manufacture of the diamond wire polycrystalline silicon wafer, can control the corrosion speed of acid to a line mark area and a non-line mark area, reduces the texturing difference between the line mark area and the non-line mark area, can obtain a silicon wafer with unobvious reflection and line marks, effectively improves the appearance of the silicon wafer, obtains the silicon wafer which meets the requirement of the market on the appearance of a battery, reduces the color difference proportion generated after silicon nitride coating, avoids the problem of bright crystal lattices generated after assembly lamination, and greatly improves the qualified rate of the battery; meanwhile, the reflectivity of the surface of the silicon wafer can be reduced, the conversion efficiency of the battery is improved, and therefore the power generation power of the component is improved.
Drawings
FIG. 1 is an optical microscope image of the surface texture of a diamond wire polycrystalline silicon wafer after texturing is carried out without adding the texturing auxiliary of the invention;
FIG. 2 is an optical microscope photograph of the textured surface of the diamond wire polycrystalline silicon wafer in example 3 of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made with reference to the accompanying drawings. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
Example 1:
the texturing process applying the diamond wire polycrystalline silicon wafer texturing auxiliary agent provided by the invention comprises the following process steps:
1) preparing a texturing auxiliary agent: dissolving 0.5g of polyacrylic acid, 0.1g of polyoxyethylene lauryl ether and 1g of ammonium citrate in deionized water by taking deionized water as a solvent to obtain 100g of the auxiliary texturing agent;
2) preparing a texturing solution: 5kg of HF aqueous solution (the mass percentage of HF in the HF aqueous solution is 49 percent) and 20kg of HNO3Aqueous solution (HNO)3HNO in aqueous solution369%) in deionized water to obtain 100kg of an acid solution; then theAdding 100g of the wool making auxiliary agent prepared in the step 1) into the acid solution to obtain wool making liquid;
3) texturing: and (3) immersing the diamond wire polycrystalline silicon cell into a texturing solution for surface texturing, wherein the texturing temperature is 5 ℃, and the texturing time is 150 s.
Example 2:
the texturing process applying the diamond wire polycrystalline silicon wafer texturing auxiliary agent provided by the invention comprises the following process steps:
1) preparing a texturing auxiliary agent: dissolving 40g of polyacrylic acid, 10g of polyoxyethylene lauryl ether and 60g of ammonium citrate in deionized water by taking the deionized water as a solvent to obtain 2kg of the auxiliary texturing agent;
2) preparing a texturing solution: 15kg of HF aqueous solution (the mass percentage of HF in the HF aqueous solution is 49%) and 60kg of HNO3Aqueous solution (HNO)3HNO in aqueous solution369%) in deionized water to obtain 100kg of an acid solution; then adding 2kg of the wool making auxiliary agent prepared in the step 1) into the acid solution to obtain wool making liquid;
3) texturing: and (3) immersing the diamond wire polycrystalline silicon cell into a texturing solution for surface texturing, wherein the texturing temperature is 30 ℃, and the texturing time is 20 s.
Example 3:
the texturing process applying the diamond wire polycrystalline silicon wafer texturing auxiliary agent provided by the invention comprises the following process steps:
1) preparing a texturing auxiliary agent: dissolving 10g of polyacrylic acid, 3g of polyoxyethylene lauryl ether and 20g of ammonium citrate in deionized water by taking the deionized water as a solvent to obtain 1kg of texturing auxiliary agent;
2) preparing a texturing solution: 10kg of HF aqueous solution (the mass percentage of HF in the HF aqueous solution is 49 percent) and 40kg of HNO3Aqueous solution (HNO)3HNO in aqueous solution369%) in deionized water to obtain 100kg of an acid solution; then adding 1kg of the wool making auxiliary agent prepared in the step 1) into the acid solution to obtain wool making liquid;
3) texturing: and (3) immersing the diamond wire polycrystalline silicon cell into a texturing solution for surface texturing, wherein the texturing temperature is 25 ℃, and the texturing time is 60 s.
FIG. 1 is an optical microscope image of the surface texture of a diamond wire polycrystalline silicon wafer after texturing is carried out without adding the texturing auxiliary of the invention; FIG. 2 is an optical microscope photograph of the textured surface of the diamond wire polycrystalline silicon wafer in example 3 of the present invention. Comparing fig. 1 and fig. 2, it can be seen that after texturing, the difference between the texturing areas of the diamond wire polycrystalline silicon wafer surface line-mark area and the non-line-mark area is reduced, and a silicon wafer with inconspicuous reflection and line marks can be obtained.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the technical principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (6)
1. The diamond wire polycrystalline silicon wafer texturing auxiliary agent is characterized by comprising the following components in percentage by mass: polyacrylic acid: 0.5-2%, polyoxyethylene lauryl ether: 0.1% -0.5%, ammonium citrate: 1 to 3 percent of the total weight of the paint, and the balance of water.
2. The diamond wire polycrystalline silicon wafer texturing aid according to claim 1, wherein the water is deionized water.
3. The texturing solution for texturing the diamond wire polycrystalline silicon wafer is characterized by comprising an acid solution and the diamond wire polycrystalline silicon wafer texturing auxiliary agent of any one of claims 1-2, wherein the mass ratio of the diamond wire polycrystalline silicon wafer texturing auxiliary agent to the acid solution is 0.1-2: 100; the acid solution is mixed with 5 to 15 percent of HF aqueous solution and 20 to 60 percent of HNO3An aqueous solution; the HF aqueous solution contains 49% of HF and HNO3The aqueous solution contains 69% of HNO3(ii) a Wherein the percentage is mass percent.
4. A method for texturing a diamond wire polycrystalline silicon wafer, characterized in that the texturing solution according to claim 3 is used to texture the surface of a diamond wire polycrystalline silicon wafer.
5. The texturing method of the diamond wire polycrystalline silicon wafer according to claim 4, wherein the texturing temperature for surface texturing is 5-30 ℃ and the texturing time is 20-150 s.
6. The texturing method of the diamond wire polycrystalline silicon wafer according to claim 5, characterized by comprising the following specific steps:
1) preparing a texturing auxiliary agent: adding polyacrylic acid with the mass percentage of 0.5-2%, lauryl alcohol polyoxyethylene ether with the mass percentage of 0.1-0.5% and ammonium citrate with the mass percentage of 1-3% into the rest of water, and uniformly mixing to prepare a texturing auxiliary agent;
2) preparing a texturing solution: adding the texturing auxiliary prepared in the step 1) into an acid solution, and uniformly mixing to prepare a texturing solution; the mass ratio of the texturing auxiliary agent to the acid solution is 0.1-2: 100; the acid solution is mixed with 5 to 15 percent of HF aqueous solution and 20 to 60 percent of HNO3An aqueous solution; the HF aqueous solution contains 49% of HF and HNO3The aqueous solution contains 69% of HNO3(ii) a Wherein the percentage is mass percentage;
3) immersing the diamond wire polycrystalline silicon wafer into the texturing liquid prepared in the step 2) for surface texturing, wherein the texturing temperature is 5-30 ℃, and the texturing time is 20-150 s.
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| CN108221057B (en) * | 2018-01-18 | 2020-05-08 | 西安润威光电科技有限公司 | Method for preparing silicon solar cell texture by using graphene oxide-based crystalline silicon texture making additive |
| CN108624962A (en) * | 2018-05-03 | 2018-10-09 | 上海汉遥新材料科技有限公司 | A kind of diamond wire polycrystalline slice flocking additive and preparation method thereof, application method |
| CN110644049A (en) * | 2018-06-26 | 2020-01-03 | 上海硅洋新能源科技有限公司 | Diamond wire polycrystalline silicon wafer texturing additive and diamond wire polycrystalline silicon wafer texturing etching liquid |
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| CN103132079B (en) * | 2013-02-07 | 2015-07-08 | 睿纳能源科技（上海）有限公司 | Additive for acid texturing of diamond-wire-cutting polycrystalline silicon slices and application method thereof |
| CN103409808B (en) * | 2013-09-04 | 2015-10-21 | 常州时创能源科技有限公司 | Polycrystalline silicon texturing additive and using method thereof |
| CN103696021A (en) * | 2013-12-23 | 2014-04-02 | 泰通(泰州)工业有限公司 | Polycrystalline velvet additive-matched surface treatment technology after felting |
| CN103993360B (en) * | 2014-06-09 | 2016-08-24 | 常州时创能源科技有限公司 | Polycrystalline silicon texturing adjuvant and application thereof |
| CN104131356A (en) * | 2014-08-14 | 2014-11-05 | 无锡尚品太阳能电力科技有限公司 | Polycrystalline silicon battery chip corrosion solution and preparation process thereof |
| CN106222755A (en) * | 2016-09-30 | 2016-12-14 | 杭州飞鹿新能源科技有限公司 | Additive and application process thereof for polycrystalline silicon texturing |
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Address after: Liyang City, Jiangsu province 213300 Li Cheng Zhen Wu Changzhou city Tandu Road No. 8 Patentee after: Changzhou Shichuang Energy Co., Ltd Address before: Liyang City, Jiangsu province 213300 Li Cheng Zhen Wu Changzhou city Tandu Road No. 8 Patentee before: CHANGZHOU SHICHUANG ENERGY TECHNOLOGY Co.,Ltd. |