CN104131356A - Polycrystalline silicon battery chip corrosion solution and preparation process thereof - Google Patents
Polycrystalline silicon battery chip corrosion solution and preparation process thereof Download PDFInfo
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- CN104131356A CN104131356A CN201410401981.0A CN201410401981A CN104131356A CN 104131356 A CN104131356 A CN 104131356A CN 201410401981 A CN201410401981 A CN 201410401981A CN 104131356 A CN104131356 A CN 104131356A
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Abstract
The invention relates to a polycrystalline silicon battery chip corrosion solution and a preparation process thereof. The polycrystalline silicon battery chip corrosion solution comprises the following components in parts by weight: 10-12 parts of hydrofluoric acid, 80-82 parts of nitric acid, 1-3 parts of texturing aid and 66 parts of water, wherein the mass percentage concentration of the hydrofluoric acid is 49+/-1%, and the mass percentage concentration of the nitric acid is 78+/-1%. The preparation process for the polycrystalline silicon battery chip corrosion solution is characterized by comprising the steps of injecting 66 parts by weight of water into a texturing tank, cooling the water to 12-15 DEG C, and adding 10-12 parts by weight of hydrofluoric acid, 80-82 parts by weight of nitric acid and 1-3 parts by weight of texturing aid; introducing nitrogen for bubbling, meanwhile, circularly cooling with chilled water to keep the temperature at 5-8 DEG C to obtain the corrosion solution; wherein the flow rate of the nitrogen is 5-15L/min, and the temperature of the circular chilled water is 0-4 DEG C. By adopting the corrosion solution disclosed by the invention, the speed of reaction between a silicon chip and the acidic corrosion solution is easy to control, and a uniform surface morphology structure can be formed.
Description
Technical field
The present invention relates to a kind of polycrystal silicon cell chip corrosive liquid and preparation technology thereof, belong to photovoltaic technology field.
Background technology
The energy is the basis that human society advances, and environment is the prerequisite of human kind sustainable development.Traditional energy growing tension, people constantly seek new clear energy sources.Various new forms of energy have its quality, and photovoltaic generation, as the Yi Ge branch of new forms of energy, more and more causes people's concern.Recent years, the output of solar cell is with unprecedented speed increment, and crystal silicon cell is the main flow of occuping market still.Since polycrystalline silicon material has been used to replace silicon single crystal with since reducing the cost of crystal silicon solar energy battery, prepare high-quality suede structure and just do not stop improving the trial of its absorptivity.Through investigator's exploration, finally selected to prepare matte with acid solution isotropic etch silicon chip.The acid solution here mainly refers to HF/HNO3 system.Acid solution is the autocatalysis of reaction to the shortcoming of silicon slice corrosion maximum, and the repeatability of quality product is difficult to control, and this can bring very large difficulty to scale operation undoubtedly.In being applied to suitability for industrialized production actual procedure, technician controls reaction by auxiliary equipments such as heating/cooling device, circulation devices, and this has increased again process costs.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, a kind of polycrystal silicon cell chip corrosive liquid and preparation technology thereof are provided, this corrosive fluid can form on polysilicon chip surface consistent surface topography uniformly.
According to technical scheme provided by the invention, a kind of polycrystal silicon cell chip corrosive liquid, feature is, comprises following component, component ratio is counted by weight: 10～12 parts of hydrofluoric acid, 80～82 parts of nitric acid, 1～3 part of texturing assistant agent and 66 parts of water; The mass percentage concentration of hydrofluoric acid is 49 ± 1%, and the mass percentage concentration of nitric acid is 78 ± 1%.
The preparation technology of described polycrystal silicon cell chip corrosive liquid, it is characterized in that, comprise the following steps, component ratio is counted by weight: 66 parts of water are injected to texturing slot and be cooled to 12～15 ℃, add 10～12 parts of hydrofluoric acid, 80～82 parts of nitric acid and 1～3 part of texturing assistant agent; Pass into nitrogen bubble, use refrigerated water circulation temperature lowering simultaneously, guarantee that temperature, at 5～8 ℃, obtains described corrosive fluid; Wherein, nitrogen flow is 5～15L/min, and the temperature of circulated refrigerated water is 0～4 ℃.
Compared with the prior art the present invention has the following advantages: (1) is owing to adding texturing assistant agent to do inhibiter, further effectively controlled the speed of reaction of silicon chip and acid solution, when silicon chip is reacted in acid solution, the susceptibility of the factors such as temperature, acid concentration and time has been reduced greatly; (2) due to orientation, effectively controlled the speed of reaction of silicon chip and acid solution, silicon chip is more even with reacting of acid solution, silicon chip surface because of the surperficial suede structure that homogeneous reaction generates also more even, greatly reduce the luminous reflectance factor of silicon chip surface, open-circuit voltage (Uoc), short-circuit current (I
sc) and efficiency of conversion (EFF) have lifting to a certain degree; (3) because reaction is evenly slow, wafer thinning amount is less than traditional technology, and the sinuousness of finished product is very little; (4) surface clean, crystal boundary is fuzzy, bad without staple, speck etc.
Embodiment
Below in conjunction with specific embodiment, the invention will be further described.
Texturing assistant agent used in the present invention is commercially available prod, is not specifically limited, as long as goal of the invention of the present invention is not produced to restriction; The texturing assistant agent for the production of Wuxi City crystallization Chemical Industry Science Co., Ltd adopting in the embodiment of the present invention, the trade mark is: JJ619, main component is: Sodium.alpha.-hydroxypropionate: 0.1%; VITAMIN: 0.2%; Tensio-active agent: 0.5%; Surface cleaning agent: 0.1%; Triammonium citrate: 0.05%.
The mass percentage concentration of hydrofluoric acid used in the present invention is 49 ± 1%, and the mass percentage concentration of nitric acid is 78 ± 1%.
Embodiment mono-: a kind of preparation technology of polycrystal silicon cell chip corrosive liquid, comprise the following steps, and component ratio is counted by weight: 66 parts of water are injected to texturing slot and be cooled to 12 ℃, add 10 parts of hydrofluoric acid, 80 parts of nitric acid and 1 part of texturing assistant agent; Pass into nitrogen bubble, use refrigerated water circulation temperature lowering simultaneously, guarantee that temperature, at 5 ℃, obtains described corrosive fluid; Wherein, nitrogen flow is 5L/min, and the temperature of circulated refrigerated water is 0 ℃.
The corrosion note obtaining in use, by 200 chip sizes, be: 156cm * 156cm, thickness are that the polysilicon chip of the P type doping of 200 ± 20 μ m weighs and puts into the corrosive fluid configuring after weight and react with balance, within 350 seconds, reach best surface effect, surface clean, crystal boundary is fuzzy, substantially without black silk speck, suede structure is uniformly distributed.After reaction finishes, polysilicon chip is taken out, use deionized water rinsing post-drying, again weigh silicon chip weight, the average attenuate amount of monolithic is 0.36g, by the cell piece efficiency of conversion average out to 17.46% of this manufacturing process.
Embodiment bis-: a kind of preparation technology of polycrystal silicon cell chip corrosive liquid, comprise the following steps, and component ratio is counted by weight: 66 parts of water are injected to texturing slot and be cooled to 15 ℃, add 12 parts of hydrofluoric acid, 82 parts of nitric acid and 3 parts of texturing assistant agents; Pass into nitrogen bubble, use refrigerated water circulation temperature lowering simultaneously, guarantee that temperature, at 8 ℃, obtains described corrosive fluid; Wherein, nitrogen flow is 15L/min, and the temperature of circulated refrigerated water is 4 ℃.
The corrosion note obtaining in use, by 200 chip sizes, be: 156cm * 156cm, thickness are that the polysilicon chip of the P type doping of 200 ± 20 μ m weighs and puts into the corrosive fluid configuring after weight and react with balance, within 340 seconds, reach best surface effect, surface clean, crystal boundary is fuzzy, substantially without black silk speck, suede structure is uniformly distributed.After reaction finishes, polysilicon chip is taken out, use deionized water rinsing post-drying, again weigh silicon chip weight, the average attenuate amount of monolithic is 0.38g, by the cell piece efficiency of conversion average out to 17.45% of this manufacturing process.
Embodiment tri-: a kind of preparation technology of polycrystal silicon cell chip corrosive liquid, comprise the following steps, and component ratio is counted by weight: 66 parts of water are injected to texturing slot and be cooled to 13 ℃, add 11 parts of hydrofluoric acid, 81 parts of nitric acid and 2 parts of texturing assistant agents; Pass into nitrogen bubble, use refrigerated water circulation temperature lowering simultaneously, guarantee that temperature, at 6 ℃, obtains described corrosive fluid; Wherein, nitrogen flow is 10L/min, and the temperature of circulated refrigerated water is 2 ℃.
The corrosion note obtaining in use, by 200 chip sizes, be: 156cm * 156cm, thickness are that the polysilicon chip of the P type doping of 200 ± 20 μ m weighs and puts into the corrosive fluid configuring after weight and react with balance, within 330 seconds, reach best surface effect, surface clean, crystal boundary is fuzzy, substantially without black silk speck, suede structure is uniformly distributed.After reaction finishes, polysilicon chip is taken out, use deionized water rinsing post-drying, again weigh silicon chip weight, the average attenuate amount of monolithic is 0.4g, by the cell piece efficiency of conversion average out to 17.45% of this manufacturing process.
The present invention is as shown in table 1 compared with the prior art.
Table 1
The polysilicon chip that the present invention obtains is as shown in table 2 with the unit for electrical property parameters of the polysilicon chip that adopts prior art to obtain.
Table 2
Open-circuit voltage (the U of the polycrystalline silicon battery plate that technique of the present invention obtains
oc), short-circuit current (I
sc) and efficiency of conversion (EFF) have lifting to a certain degree.
Claims (2)
1. a polycrystal silicon cell chip corrosive liquid, is characterized in that, comprises following component, and component ratio is counted by weight: 10～12 parts of hydrofluoric acid, 80～82 parts of nitric acid, 1～3 part of texturing assistant agent and 66 parts of water; The mass percentage concentration of hydrofluoric acid is 49 ± 1%, and the mass percentage concentration of nitric acid is 78 ± 1%.
2. the preparation technology of a polycrystal silicon cell chip corrosive liquid, it is characterized in that, comprise the following steps, component ratio is counted by weight: 66 parts of water are injected to texturing slot and be cooled to 12～15 ℃, add 10～12 parts of hydrofluoric acid, 80～82 parts of nitric acid and 1～3 part of texturing assistant agent; Pass into nitrogen bubble, use refrigerated water circulation temperature lowering simultaneously, guarantee that temperature, at 5～8 ℃, obtains described corrosive fluid; Wherein, nitrogen flow is 5～15L/min, and the temperature of circulated refrigerated water is 0～4 ℃.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107245761A (en) * | 2017-08-10 | 2017-10-13 | 常州时创能源科技有限公司 | Diamond wire polycrystalline silicon texturing adjuvant and its application |
| CN108585023A (en) * | 2018-05-03 | 2018-09-28 | 东莞运城制版有限公司 | A kind of unmanned control method in copper chloride corrosive liquid production |
| CN109554762A (en) * | 2018-12-18 | 2019-04-02 | 武汉风帆电化科技股份有限公司 | A kind of polysilicon etch solution additive and its application |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102412338A (en) * | 2011-08-23 | 2012-04-11 | 江西瑞晶太阳能科技有限公司 | Polycrystalline silicon optical mask flocking process |
| CN102586780A (en) * | 2012-02-21 | 2012-07-18 | 上海正帆科技有限公司 | Acidic etching solution, as well as preparation method and application thereof |
| CN103681974A (en) * | 2013-12-27 | 2014-03-26 | 常州时创能源科技有限公司 | Dual-slot polycrystalline silicon chip texturing method |
-
2014
- 2014-08-14 CN CN201410401981.0A patent/CN104131356A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102412338A (en) * | 2011-08-23 | 2012-04-11 | 江西瑞晶太阳能科技有限公司 | Polycrystalline silicon optical mask flocking process |
| CN102586780A (en) * | 2012-02-21 | 2012-07-18 | 上海正帆科技有限公司 | Acidic etching solution, as well as preparation method and application thereof |
| CN103681974A (en) * | 2013-12-27 | 2014-03-26 | 常州时创能源科技有限公司 | Dual-slot polycrystalline silicon chip texturing method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107245761A (en) * | 2017-08-10 | 2017-10-13 | 常州时创能源科技有限公司 | Diamond wire polycrystalline silicon texturing adjuvant and its application |
| CN108585023A (en) * | 2018-05-03 | 2018-09-28 | 东莞运城制版有限公司 | A kind of unmanned control method in copper chloride corrosive liquid production |
| CN109554762A (en) * | 2018-12-18 | 2019-04-02 | 武汉风帆电化科技股份有限公司 | A kind of polysilicon etch solution additive and its application |
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Application publication date: 20141105 |