CN102163549A - Treating fluid for bad chip after crystalline silicon film coating and treating method thereof - Google Patents
Treating fluid for bad chip after crystalline silicon film coating and treating method thereof Download PDFInfo
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- CN102163549A CN102163549A CN2011100286236A CN201110028623A CN102163549A CN 102163549 A CN102163549 A CN 102163549A CN 2011100286236 A CN2011100286236 A CN 2011100286236A CN 201110028623 A CN201110028623 A CN 201110028623A CN 102163549 A CN102163549 A CN 102163549A
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- crystalline silicon
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a treating fluid for a bad chip after crystalline silicon film coating and a treating method thereof. The treating fluid is a hydrofluoric acid aqueous solution with the concentration of 2-30% confected by deionized water and a hydrofluoric acid aqueous solution with the concentration of 50%. The treating method comprises the following steps of: 1) confecting the treating fluid in a fluff preparation slot; 2) heating the treating fluid in the fluff preparation slot to the temperature of 30-70 DEG C; and 3) placing the bad chip after crystalline silicon film coating into the fluff preparation slot to be soaked for 5-30 minutes, then taking the bad chip out of the slot, washing and drying. The bad chip after the crystalline silicon film coating is placed in the treating fluid heated to the temperature of 30-70 DEG C, and a silicon nitride 'rainbow' on the bad chip is completely removed by corrosion with the treating fluid, thus the bad chip is changed into a qualified product, the rejection rate of crystal silicon wafers is reduced, and the production cost is saved.
Description
Technical field
The present invention relates to a kind of solar cell technology of preparing, relate in particular to behind a kind of crystalline silicon plated film bad treatment fluid and processing method thereof.
Background technology
In recent years, because the problem that is becoming tight energy and environment day has been impelled the develop rapidly of solar cell photovoltaic industry.The efficient that reduces production costs, improves solar cell is the most important thing of studying at present.Owing to equipment or technological problems, each operation all can produce underproof product in process of production, if these substandard products are not handled, directly scraps and can cause very big loss to company, thereby increase production cost.This just needs us to formulate corresponding technology to make up, make it qualified, to reduce production costs.In PECVD crystalline silicon filming process, often occur surface attachment as the bad of colorful silicon nitride film of rainbow, we are referred to as " rainbow sheet "." rainbow sheet " this bad utilizes general corrosion treatment liquid to be difficult to silicon nitride " rainbow " bubble of surface of crystalline silicon is fallen, and causes a lot of crystalline silicon slice, thin pieces to become waste product, caused waste, increased production cost.
Summary of the invention
Purpose of the present invention solves the above-mentioned problems in the prior art exactly, bad treatment fluid and processing method thereof are provided behind a kind of crystalline silicon plated film, adopt this treatment fluid and processing method can well remove the silicon nitride " rainbow " on bad behind the crystalline silicon plated film, make it to become qualified products.
For achieving the above object, the technical solution that the present invention adopts is: bad treatment fluid behind a kind of crystalline silicon plated film, it is to be that concentration that 50% hydrofluoric acid aqueous solution and deionized water are mixed with is 2%～30% hydrofluoric acid aqueous solution by concentration.
A kind ofly adopt above-mentioned treatment fluid to handle behind the crystalline silicon plated film bad processing method, it may further comprise the steps: 1) the above-mentioned described treatment fluid of configuration in texturing slot; 2) treatment fluid in the texturing slot is warmed up to 30～70 ℃; 3) put into this texturing slot with bad behind the crystalline silicon plated film, soak 5～30min, then it is taken out washing, oven dry.
Because the present invention has taked such scheme, bad behind the crystalline silicon plated film places and is warmed up to 30～70 ℃ treatment fluid, and the complete processed corrosion of silicon nitride " rainbow " on bad falls, and makes useless sheet become qualified products, reduce the scrappage of crystal silicon chip, saved production cost.
Embodiment
Below in conjunction with specific embodiment the present invention is described further.
Embodiment 1, and the treatment fluid of present embodiment is to be that concentration that 50% hydrofluoric acid aqueous solution and deionized water are mixed with is 2% hydrofluoric acid aqueous solution by concentration.Its processing method is: 1) the above-mentioned described treatment fluid of configuration in texturing slot; 2) treatment fluid in the texturing slot is warmed up to 70 ℃; 3) put into this texturing slot with bad behind the crystalline silicon plated film, soak 25min, then it is taken out washing, oven dry.
Embodiment 2, and the treatment fluid of present embodiment is to be that concentration that 50% hydrofluoric acid aqueous solution and deionized water are mixed with is 30% hydrofluoric acid aqueous solution by concentration.Its processing method is: 1) the above-mentioned described treatment fluid of configuration in texturing slot; 2) treatment fluid in the texturing slot is warmed up to 30 ℃; 3) put into this texturing slot with bad behind the crystalline silicon plated film, soak 5min, then it is taken out washing, oven dry.
Embodiment 3, and the treatment fluid of present embodiment is to be that concentration that 50% hydrofluoric acid aqueous solution and deionized water are mixed with is 8% hydrofluoric acid aqueous solution by concentration.Its processing method is: 1) the above-mentioned described treatment fluid of configuration in texturing slot; 2) treatment fluid in the texturing slot is warmed up to 50 ℃; 3) put into this texturing slot with bad behind the crystalline silicon plated film, soak 15min, then it is taken out washing, oven dry.
Embodiment 4, and the treatment fluid of present embodiment is to be that concentration that 50% hydrofluoric acid aqueous solution and deionized water are mixed with is 5% hydrofluoric acid aqueous solution by concentration.Its processing method is: 1) the above-mentioned described treatment fluid of configuration in texturing slot; 2) treatment fluid in the texturing slot is warmed up to 60 ℃; 3) put into this texturing slot with bad behind the crystalline silicon plated film, soak 23min, then it is taken out washing, oven dry.
Embodiment 5, and the treatment fluid of present embodiment is to be that concentration that 50% hydrofluoric acid aqueous solution and deionized water are mixed with is 3% hydrofluoric acid aqueous solution by concentration.Its processing method is: 1) the above-mentioned described treatment fluid of configuration in texturing slot; 2) treatment fluid in the texturing slot is warmed up to 40 ℃; 3) put into this texturing slot with bad behind the crystalline silicon plated film, soak 30min, then it is taken out washing, oven dry.
Embodiment 6, and the treatment fluid of present embodiment is to be that concentration that 50% hydrofluoric acid aqueous solution and deionized water are mixed with is 14% hydrofluoric acid aqueous solution by concentration.Its processing method is: 1) the above-mentioned described treatment fluid of configuration in texturing slot; 2) treatment fluid in the texturing slot is warmed up to 65 ℃; 3) put into this texturing slot with bad behind the crystalline silicon plated film, soak 13min, then it is taken out washing, oven dry.
Embodiment 7, and the treatment fluid of present embodiment is to be that concentration that 50% hydrofluoric acid aqueous solution and deionized water are mixed with is 10% hydrofluoric acid aqueous solution by concentration.Its processing method is: 1) the above-mentioned described treatment fluid of configuration in texturing slot; 2) treatment fluid in the texturing slot is warmed up to 45 ℃; 3) put into this texturing slot with bad behind the crystalline silicon plated film, soak 10min, then it is taken out washing, oven dry.
Embodiment 8, and the treatment fluid of present embodiment is to be that concentration that 50% hydrofluoric acid aqueous solution and deionized water are mixed with is 20% hydrofluoric acid aqueous solution by concentration.Its processing method is: 1) the above-mentioned described treatment fluid of configuration in texturing slot; 2) treatment fluid in the texturing slot is warmed up to 35 ℃; 3) put into this texturing slot with bad behind the crystalline silicon plated film, soak 7min, then it is taken out washing, oven dry.
Embodiment 9, and the treatment fluid of present embodiment is to be that concentration that 50% hydrofluoric acid aqueous solution and deionized water are mixed with is 15% hydrofluoric acid aqueous solution by concentration.Its processing method is: 1) the above-mentioned described treatment fluid of configuration in texturing slot; 2) treatment fluid in the texturing slot is warmed up to 70 ℃; 3) put into this texturing slot with bad behind the crystalline silicon plated film, soak 28min, then it is taken out washing, oven dry.
Claims (2)
1. bad treatment fluid behind the crystalline silicon plated film is characterized in that: it is to be that concentration that 50% hydrofluoric acid aqueous solution and deionized water are mixed with is 2%～30% hydrofluoric acid aqueous solution by concentration.
2. one kind is adopted the described treatment fluid of claim 1 to handle behind the crystalline silicon plated film bad processing method, and it is characterized in that: it may further comprise the steps: 1) the above-mentioned described treatment fluid of configuration in texturing slot; 2) treatment fluid in the texturing slot is warmed up to 30～70 ℃; 3) put into this texturing slot with bad behind the crystalline silicon plated film, soak 5～30min, then it is taken out washing, oven dry.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100286236A CN102163549A (en) | 2011-01-27 | 2011-01-27 | Treating fluid for bad chip after crystalline silicon film coating and treating method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011100286236A CN102163549A (en) | 2011-01-27 | 2011-01-27 | Treating fluid for bad chip after crystalline silicon film coating and treating method thereof |
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| CN102163549A true CN102163549A (en) | 2011-08-24 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102412340A (en) * | 2011-10-31 | 2012-04-11 | 浙江宝利特新能源股份有限公司 | Treatment method of rainbow pieces caused by film-growing abnormity of solar battery |
| CN102709390A (en) * | 2012-05-29 | 2012-10-03 | 奥特斯维能源（太仓）有限公司 | Treatment method for removal of PN (P-type semiconductor and N-type P-type semiconductor) junction on abnormal silicon chip before single crystal semi-finished product printing |
| CN102768952A (en) * | 2012-08-01 | 2012-11-07 | 宁波尤利卡太阳能科技发展有限公司 | Method for reprocessing unqualified monocrystalline silicon wafers after diffusion |
| CN102921665A (en) * | 2012-09-27 | 2013-02-13 | 英利能源（中国）有限公司 | Cleaning solution and cleaning method for silicon nitride film on surface of silicon chip |
| CN103915329A (en) * | 2014-03-07 | 2014-07-09 | 晶澳太阳能有限公司 | Method for processing abnormal wafers before printing of monocrystalline silicon battery wire mesh |
| CN104716206A (en) * | 2015-03-23 | 2015-06-17 | 中建材浚鑫科技股份有限公司 | Method for improving defective product reworking conversion efficiency after battery is plated with antireflection film |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1588640A (en) * | 2004-08-19 | 2005-03-02 | 中国科学院物理研究所 | Method for preparing high quality GaN base material on specific saphire pattern substrate |
| CN1696349A (en) * | 2004-05-15 | 2005-11-16 | 三星电子株式会社 | Etching liquid for removing oxyde film, and its prepn. method and method of mfg. semiconductor device |
-
2011
- 2011-01-27 CN CN2011100286236A patent/CN102163549A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1696349A (en) * | 2004-05-15 | 2005-11-16 | 三星电子株式会社 | Etching liquid for removing oxyde film, and its prepn. method and method of mfg. semiconductor device |
| CN1588640A (en) * | 2004-08-19 | 2005-03-02 | 中国科学院物理研究所 | Method for preparing high quality GaN base material on specific saphire pattern substrate |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102412340A (en) * | 2011-10-31 | 2012-04-11 | 浙江宝利特新能源股份有限公司 | Treatment method of rainbow pieces caused by film-growing abnormity of solar battery |
| CN102709390A (en) * | 2012-05-29 | 2012-10-03 | 奥特斯维能源（太仓）有限公司 | Treatment method for removal of PN (P-type semiconductor and N-type P-type semiconductor) junction on abnormal silicon chip before single crystal semi-finished product printing |
| CN102768952A (en) * | 2012-08-01 | 2012-11-07 | 宁波尤利卡太阳能科技发展有限公司 | Method for reprocessing unqualified monocrystalline silicon wafers after diffusion |
| CN102768952B (en) * | 2012-08-01 | 2014-12-17 | 宁波尤利卡太阳能科技发展有限公司 | Method for reprocessing unqualified monocrystalline silicon wafers after diffusion |
| CN102921665A (en) * | 2012-09-27 | 2013-02-13 | 英利能源（中国）有限公司 | Cleaning solution and cleaning method for silicon nitride film on surface of silicon chip |
| CN103915329A (en) * | 2014-03-07 | 2014-07-09 | 晶澳太阳能有限公司 | Method for processing abnormal wafers before printing of monocrystalline silicon battery wire mesh |
| CN104716206A (en) * | 2015-03-23 | 2015-06-17 | 中建材浚鑫科技股份有限公司 | Method for improving defective product reworking conversion efficiency after battery is plated with antireflection film |
| CN104716206B (en) * | 2015-03-23 | 2017-06-16 | 中建材浚鑫科技股份有限公司 | A kind of method of cell piece reworks conversion efficiency after raising coated with antireflection film |
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Application publication date: 20110824 |