CN104538486B - A manufacturing process for directly growing silicon oxide film of crystal silicon cell via laughing gas - Google Patents
A manufacturing process for directly growing silicon oxide film of crystal silicon cell via laughing gas Download PDFInfo
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- CN104538486B CN104538486B CN201410662237.6A CN201410662237A CN104538486B CN 104538486 B CN104538486 B CN 104538486B CN 201410662237 A CN201410662237 A CN 201410662237A CN 104538486 B CN104538486 B CN 104538486B
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- oxide film
- silicon oxide
- silicon nitride
- silicon
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- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 title claims abstract description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 229910052814 silicon oxide Inorganic materials 0.000 title claims abstract description 34
- 235000013842 nitrous oxide Nutrition 0.000 title claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 20
- 239000010703 silicon Substances 0.000 title claims abstract description 20
- 239000013078 crystal Substances 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title abstract description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 32
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 32
- 238000004140 cleaning Methods 0.000 claims abstract description 13
- 238000000151 deposition Methods 0.000 claims abstract description 10
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 7
- 238000005516 engineering process Methods 0.000 claims description 21
- 238000002360 preparation method Methods 0.000 claims description 21
- 239000011229 interlayer Substances 0.000 claims description 8
- 238000004062 sedimentation Methods 0.000 claims description 7
- 239000010410 layer Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 9
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000005086 pumping Methods 0.000 abstract 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract 2
- 230000000694 effects Effects 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention discloses a manufacturing process for directly growing silicon oxide film of a crystal silicon cell via laughing gas without increasing equipment, wherein the crystal silicon cells can be produced in a large batch. Specific operational steps thereof comprises: (1) performing vacuum pumping/N2 cleaning; (2) growing a silicon oxide film; (3) depositing an intermediate-layer silicon nitride film; (4) depositing an upper-layer silicon nitride film; and (5) performing vacuum pumping/N2 cleaning: executing vacuum pumping /N2 cleaning circle for one time and exiting from a wafer boat. Beneficial effects of the present invention are: metal ions can be prevented from invading the cell by directly growing a dense silicon oxide film through infusing the laughing gas in the PECVD process on the basis of only improving the PECVD process, so that a component PID phenomenon can be fundamentally solved at a cell end. The method does not need to increase equipment and crystal silicon cell can be produced in a large batch.
Description
Technical field
The present invention relates to the preparation field of single multi- crystal silicon battery, refer in particular to a kind of single multi- crystal silicon battery laughing gas and directly give birth to
The preparation technology of long silicon oxide film.
Background technology
In the world, the manufacture of solar cell and its electricity generation system and application have become since the microelectronics eighties that continues again
The one huge industry developing rapidly.But, photovoltaic module large-scale use for a period of time after, the large-scale light that particularly puts into effect
After overhead utility works several years, photovoltaic module will occur significantly to decay.
Early in 2005, after sunpower has found that the back contacts N-shaped battery of crystal silicon type applies positive high voltage in assembly
There is relaxation phenomenon.2008, evergreen reported that relaxation phenomenon equally appears in the front under high back bias voltage and connects p-type
In battery component.2010, solon se was reported in the polycrystalline of standard and single crystal battery and has had been found that polarity effect.Quickly
The p-type battery standard assembly that solon se and nrel just proposes which kind of technique productions under negative high bias all exists and declines
Subtract the greater risk of phenomenon.This phenomenon by potential difference initiation assembly decay is referred to as current potential induction attenuation effect, abbreviation pid
(potential induced degradation), receives giving more sustained attention of industry.Pid phenomenon is in the practice of power station
Not rarely seen, its direct result is that power station actual power effect declines, thus seriously damaging investor's yield, eventually leads
Cause assembly manufacturer to meet with and complain the even return of goods, reparation.
Some countries and regions have progressively started one of the key request using anti-pid as assembly.A lot of Japanese user are bright
Really require anti-pid characteristic to write contract, and inspect by random samples at random.The buyer in Europe is also eager to have a try and proposes same requirement.This becomes
Gesture also makes domestic increasing photovoltaic plant owner's unit, photovoltaic cell and assembly factory, measuring unit and material supplier
More and more urgent to the requirement solving pid.
At present, pid can be prevented in terms of system, assembly and three, battery.Solve pid in system end and can bring volume
Outer equipment cost and the decline of efficiency；Solve pid in assembly end, cost is too high, and can not fundamentally solve；Only in electricity
It is practical that Chi Duan solves pid.
Content of the invention
The present invention is above-mentioned in order to overcome the shortcomings of to exist in prior art, there is provided one kind need not increase equipment and can criticize
Quantify the preparation technology of the crystal silicon battery laughing gas direct growth silicon oxide film of production.
To achieve these goals, the present invention employs the following technical solutions:
A kind of preparation technology of crystal silicon battery laughing gas direct growth silicon oxide film, leads to laughing gas direct growth in pecvd operation
Silicon oxide film, to stop metal ion from invading battery, concrete operation step is as follows:
(1) vacuumize/n2Cleaning；
(2) growing silicon oxide film；
(3) depositing inter-layer silicon nitride film；
(4) deposited overlayers silicon nitride film；
(5) vacuumize/n2Cleaning: execution once vacuumizes/n2Clean cycle, and move back boat.
Lead to laughing gas (n in pecvd operation2O) direct growth silicon oxide film, then deposits two-layer silicon nitride film, finally goes out boat.
Compared with existing preparation technology, the preparation technology of the present invention grew the silicon oxide film of densification before silicon nitride film, can
Stop metal ion from invading battery, solve assembly pid in battery-end.So compared with the method for other solution assembly pid, the party
Method need not increase equipment, can mass production.
Preferably, in step (1), vacuumizing/n2The concrete preparation technology of cleaning is as follows: execution once vacuumizes/n2
Clean cycle, temperature 400-470 DEG C, n2Flow is 5000-12000sccm (every point of condition milliliter of mark, volume flow unit).
Preferably, in step (2), the concrete preparation technology of silicon oxide film is as follows: temperature 400-470 DEG C, logical n2O is straight
Deliver a child long silicon oxide film, flow 4000-6000sccm, duration 100-800s, pressure 1400-1800mtorr (millitorr, pressure
Strong unit), radio-frequency power 2500-4000w, refractive index 1.4-1.6, silicon oxide thickness 3-30nm.
Preferably, in step (3), the concrete preparation technology of intermediate layer silicon nitride film is as follows: temperature 400-470 DEG C,
Depositing inter-layer silicon nitride film, sedimentation time 30-100s, pressure 1600-1800mtorr, sih4∶nh3Flow-rate ratio 1: 4 to 1: 5,
Radio-frequency power 2500-4000w, refractive index 2.0-2.05, silicon nitride thickness 3-10nm.
Preferably, in step (4), the concrete preparation technology of upper silicon nitride film is as follows: temperature 400-470 DEG C, sink
Long-pending upper silicon nitride film, sedimentation time 120-300s, pressure 1600-1800mtorr, sih4∶nh3Flow-rate ratio 1: 5 to 1: 10, penetrates
Frequency power 2500-4000w, refractive index 2.05-2.15, silicon nitride thickness 12-40nm.
The invention has the beneficial effects as follows: lead to the fine and close silicon oxide film technique of laughing gas direct growth using in pecvd operation,
On the basis of only improving pecvd technique, metal ion can be stoped to invade battery, fundamentally solve assembly pid phenomenon in battery-end,
The method need not increase equipment, can mass production.
Specific embodiment
With reference to specific embodiment, the present invention will be further described.
Embodiment 1: a kind of preparation technology of crystal silicon battery laughing gas direct growth silicon oxide film, lead in pecvd operation and laugh at
Gas direct growth silicon oxide film, to stop metal ion from invading battery, in this embodiment, crystal silicon battery uses monocrystalline silicon
Battery, specifically includes following steps:
(1) vacuumize/n2Cleaning: execution once vacuumizes/n2Clean cycle, 400 DEG C of temperature, n2Flow 5000sccm；
(2) growing silicon oxide film: 400 DEG C of temperature, logical n2O direct growth silicon oxide film, flow 5000sccm, the duration
100s, pressure 1400mtorr, radio-frequency power 2500w, refractive index 1.4, silicon oxide thickness 10nm；
(3) depositing inter-layer silicon nitride film: 400 DEG C of temperature, depositing inter-layer silicon nitride film, sedimentation time 30s, pressure
1600mtorr, sih4∶nh3Flow-rate ratio 1: 4, radio-frequency power 2500w, refractive index 2.0, silicon nitride thickness 3nm；
(4) deposited overlayers silicon nitride film: 400 DEG C of temperature, deposited overlayers silicon nitride film, sedimentation time 200s, pressure
1600mtorr, sih4∶nh3Flow-rate ratio 1: 5, radio-frequency power 2500w, refractive index 2.1, silicon nitride thickness 20nm；
(5) vacuumize/n2Cleaning: execution once vacuumizes/n2Clean cycle, and move back boat.
Embodiment 2: a kind of preparation technology of crystal silicon battery laughing gas direct growth silicon oxide film, lead in pecvd operation and laugh at
Gas direct growth silicon oxide film, to stop metal ion from invading battery, in this embodiment, crystal silicon battery uses polysilicon
Battery, specifically includes following steps:
(1) vacuumize/n2Cleaning: execution once vacuumizes/n2Clean cycle, 450 DEG C of temperature, n2Flow 5000sccm；
(2) growing silicon oxide film: 450 DEG C of temperature, logical n2O direct growth silicon oxide film, flow 5000sccm, the duration
500s, pressure 1400mtorr, radio-frequency power 2500w, refractive index 1.6, silicon oxide thickness 20nm；
(3) depositing inter-layer silicon nitride film: 450 DEG C of temperature, depositing inter-layer silicon nitride film, sedimentation time 30s, pressure
1600mtorr, sih4∶nh3Flow-rate ratio 1: 4, radio-frequency power 2500w, refractive index 2.0, silicon nitride thickness 3nm；
(4) deposited overlayers silicon nitride film: 400 DEG C of temperature, deposited overlayers silicon nitride film, sedimentation time 200s, pressure
1600mtorr, sih4∶nh3Flow-rate ratio 1: 5, radio-frequency power 2500w, refractive index 2.1, silicon nitride thickness 20nm；
(5) vacuumize/n2Cleaning: execution once vacuumizes/n2Clean cycle, and move back boat.
As shown in table 1 below, it leads to laughing gas 100s for monocrystalline silicon battery, and the assembly pid that polycrystal silicon cell leads to laughing gas 500s surveys
Examination result (pid test condition: 85 DEG C of temperature, relative humidity 85%rh, -1000v, 96 hours；Pid criterion of acceptability is: pid
After test, pm conservation rate ＞ 95%).
Table 1
From table 1 it follows that the polysilicon of the assembly made of the monocrystalline silicon battery of logical laughing gas 100s and logical laughing gas 500s
The assembly that battery is made respectively has passed through the pid test under the conditions of double the 85 of 3 wheels.
Claims (4)
1. a kind of preparation technology of crystal silicon battery laughing gas direct growth silicon oxide film, is characterized in that, leads to laughing gas in pecvd operation straight
Deliver a child long silicon oxide film, to stop metal ion from invading battery, concrete operation step is as follows:
(1) vacuumize/n2Cleaning；
(2) growing silicon oxide film；The concrete preparation technology of silicon oxide film is as follows: temperature 400-470 DEG C, logical n2O direct growth aoxidizes
Silicon fiml, flow 4000-6000sccm, duration 100-800s, pressure 1400-1800mtorr, radio-frequency power 2500-
4000w, refractive index 1.4-1.6, silicon oxide thickness 3-30nm；
(3) depositing inter-layer silicon nitride film；
(4) deposited overlayers silicon nitride film；
(5) vacuumize/n2Cleaning: execution once vacuumizes/n2Clean cycle, and move back boat.
2. a kind of preparation technology of crystal silicon battery laughing gas direct growth silicon oxide film according to claim 1, is characterized in that,
In step (1), vacuumize/n2The concrete preparation technology of cleaning is as follows: execution once vacuumizes/n2Clean cycle, temperature 400-
470 DEG C, n2Flow is 5000-12000sccm.
3. a kind of preparation technology of crystal silicon battery laughing gas direct growth silicon oxide film according to claim 1, is characterized in that,
In step (3), the concrete preparation technology of intermediate layer silicon nitride film is as follows: temperature 400-470 DEG C, depositing inter-layer silicon nitride
Film, sedimentation time 30-100s, pressure 1600-1800mtorr, sih4∶nh3Flow-rate ratio 1: 4 to 1: 5, radio-frequency power 2500-
4000w, refractive index 2.0-2.05, silicon nitride thickness 3-10nm.
4. a kind of preparation technology of crystal silicon battery laughing gas direct growth silicon oxide film according to claim 1, is characterized in that,
In step (4), the concrete preparation technology of upper silicon nitride film is as follows: temperature 400-470 DEG C, deposited overlayers silicon nitride film, sinks
Long-pending time 120-300s, pressure 1600-1800mtorr, sih4∶nh3Flow-rate ratio 1: 5 to 1: 10, radio-frequency power 2500-4000w,
Refractive index 2.05-2.15, silicon nitride thickness 12-40nm.
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| CN201410662237.6A CN104538486B (en) | 2014-11-19 | 2014-11-19 | A manufacturing process for directly growing silicon oxide film of crystal silicon cell via laughing gas |
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| CN108598212B (en) * | 2018-03-30 | 2020-03-20 | 横店集团东磁股份有限公司 | Method for passivating solar cell |
| CN111697110A (en) * | 2020-06-12 | 2020-09-22 | 上海理想万里晖薄膜设备有限公司 | Heterojunction solar cell and manufacturing method thereof |
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| WO2013124394A3 (en) * | 2012-02-23 | 2013-10-17 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for producing a solar cell |
| CN103367467A (en) * | 2013-08-02 | 2013-10-23 | 浙江正泰太阳能科技有限公司 | Solar cell |
| CN103943718A (en) * | 2014-03-19 | 2014-07-23 | 晶澳（扬州）太阳能科技有限公司 | Method for preparing PID-resisting film |
| CN103943717A (en) * | 2014-03-19 | 2014-07-23 | 晶澳（扬州）太阳能科技有限公司 | Method for manufacturing solar cell laminated antireflective film through tubular PECVD |
| CN104091838A (en) * | 2014-06-18 | 2014-10-08 | 镇江大全太阳能有限公司 | High-conversion-efficiency PID-resisting crystalline silicon solar cell and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102864439B (en) * | 2012-09-03 | 2014-04-02 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | Method for preparing antireflection film with potential induced degradation (PID) effect resistance |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013124394A3 (en) * | 2012-02-23 | 2013-10-17 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for producing a solar cell |
| CN103367467A (en) * | 2013-08-02 | 2013-10-23 | 浙江正泰太阳能科技有限公司 | Solar cell |
| CN103943718A (en) * | 2014-03-19 | 2014-07-23 | 晶澳（扬州）太阳能科技有限公司 | Method for preparing PID-resisting film |
| CN103943717A (en) * | 2014-03-19 | 2014-07-23 | 晶澳（扬州）太阳能科技有限公司 | Method for manufacturing solar cell laminated antireflective film through tubular PECVD |
| CN104091838A (en) * | 2014-06-18 | 2014-10-08 | 镇江大全太阳能有限公司 | High-conversion-efficiency PID-resisting crystalline silicon solar cell and manufacturing method thereof |
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Denomination of invention: A preparation process for direct growth of silicon oxide film using laughing gas in crystalline silicon batteries Effective date of registration: 20230522 Granted publication date: 20170125 Pledgee: Dongyang Branch of China Construction Bank Co.,Ltd. Pledgor: HENGDIAN GROUP DMEGC MAGNETICS Co.,Ltd. Registration number: Y2023330000949 |
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