CN102851743B - A kind of method reducing polysilicon making herbs into wool surface reflectivity - Google Patents
A kind of method reducing polysilicon making herbs into wool surface reflectivity Download PDFInfo
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- CN102851743B CN102851743B CN201210323936.9A CN201210323936A CN102851743B CN 102851743 B CN102851743 B CN 102851743B CN 201210323936 A CN201210323936 A CN 201210323936A CN 102851743 B CN102851743 B CN 102851743B
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- surface reflectivity
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- making herbs
- wool
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Abstract
The invention discloses a kind of method reducing polysilicon making herbs into wool surface reflectivity, more particularly to when using polysilicon processed with acid floss to occur that surface reflectivity is too high, reduce the reflectance on polysilicon making herbs into wool surface.Option A: stop adding HNO3, it is ensured that HF normally adds, HNO in solution after certain time3Lowering of concentration；As time goes on, rate to be reflected is reduced in technical parameter claimed range, normally adds HNO3And HF.Option b: add water reduction HNO3With the overall density of HF, then adding HF, rate to be reflected is reduced in technical parameter claimed range, normally adds HNO3And HF.The invention has the beneficial effects as follows the surface reflectivity after can being effectively reduced polysilicon making herbs into wool, reduce paillette, the pattern sheet caused because reflectance is too high, reach to improve the purpose of the photoelectric transformation efficiency of polysilicon solar battery slice.
Description
Technical field
The present invention relates to the manufacture technology field of crystal silicon solar energy battery, be specifically related in making herbs into wool operation a kind of reduction many
The method of crystal silicon making herbs into wool surface reflectivity.
Background technology
In the production technology of crystal silicon solar batteries, silicon chip surface is corroded the matte prepared can be effectively
Reduce silicon chip surface reflectivity, surface reflectivity be affect crystal silicon solar batteries photoelectric transformation efficiency key factor it
One.Due to the multiformity of polysilicon grain orientation, use alkali process for etching cannot obtain uniform matte, therefore cannot be effectively
Reduce the surface reflectivity of polysilicon.At present, in the preparation method of polycrystalline silicon suede, (i.e. isotropism is rotten for acid corrosion technology
Erosion) uniform and that reflectance is relatively low matte can be obtained, the purpose of low cost, large-scale production can be realized again.
Under normal circumstances, in actual production process, the conventional method reducing silicon wafer wool making rear surface reflectance is to use
Promote belt speed or reduce HF and HNO3Overall density realize.The method can reduce silicon chip surface reflectance, simultaneously silicon
Sheet etching extent also declines, so that causing silicon chip damage layer to remove the cleanest.In actual production process, flower also frequently occurs
Sheet, paillette.These all can affect the photoelectric transformation efficiency of polysilicon solar battery slice.
Summary of the invention
It is an object of the invention to provide a kind of method reducing polysilicon making herbs into wool surface reflectivity, the method can be thinning
Measure constant in the case of, reduce polysilicon making herbs into wool surface reflectivity, be effectively improved the conversion efficiency of solaode, simultaneously can
Reduce flower sheet, the generation of paillette.
It is as follows that the present invention solves to reduce the technical scheme taked of polysilicon surface reflectance:
In the case of using polysilicon processed with acid for matte, occur when surface reflectivity is too high, use described below two
Plant technical scheme and reduce the reflectance on polysilicon making herbs into wool surface.Concrete scheme is as follows:
Option A: stop adding HNO3, it is ensured that HF normally adds, HNO in solution after continuing 60 minutes3Lowering of concentration, instead
Rate of penetrating reduces；As time goes on, HNO in solution3Lowering of concentration, reflectance declines further；Rate to be reflected is reduced to
In technical parameter claimed range, normally add HNO3And HF.
Option b: add water reduction HNO3With the overall density of HF, the most again by adding HF, the concentration improving HF makes corruption
Degree of corrosion is constant, and rate to be reflected is reduced in technical parameter claimed range, normally adds HNO3And HF.
The invention has the beneficial effects as follows: use technical scheme proposed by the invention can be effectively reduced polysilicon making herbs into wool
After surface reflectivity, paillette, the pattern sheet caused because reflectance is too high can be efficiently reduced, reach reduce surface reflection,
Strengthen photoelectric absorption, thus reach to improve the purpose of the photoelectric transformation efficiency of polysilicon solar battery slice.
Detailed description of the invention
A kind of method reducing polysilicon making herbs into wool surface reflectivity provided below according to the present invention, uses following concrete
Embodiment is described further.The present embodiment is in making herbs into wool, diffusion, wax spray, etching, the technique of each procedure of silk screen printing
Carry out under conditions of identical with former technique.Detailed description of the invention is as follows:
1. at HN03Volume fraction 63%, HF volume fraction 9%, in the solution of pure water volume fraction 28%, temperature is 8 DEG C, rotten
The erosion time is 90 seconds, records polysilicon chip surface reflectivity 25.5% under the conditions of this, and Reducing thickness is 0.43g.
2., under conditions of step 1, stop adding HNO3, it is ensured that HF normally adds, and after continuing 60 minutes, records the most
Crystal silicon chip surface reflectivity drops to 23.2%, then through 10 minutes, records polysilicon chip surface reflectivity and drop to 22.6%.
Rate the most to be reflected is reduced to 22.6%, when Reducing thickness keeps 0.43g, normally adds HNO3And HF.
The polysilicon solar battery slice processed through complete processing procedure is placed under standard test condition and detects, take
The technical scheme of present invention offer and former technical scheme carry out the unit for electrical property parameters of the polysilicon solar battery slice of making herbs into wool process
As shown in Table 1 and Table 2.
Table 1 uses the unit for electrical property parameters of polysilicon solar battery slice prepared by technical scheme of the present invention
| Uoc | Isc | Rs | Rsh | FF | NCell |
| 0.626 | 8.56 | 0.0028 | 202.99 | 78.07 | 17.21% |
The unit for electrical property parameters of polysilicon solar battery slice prepared by the former technical scheme of table 2
| Uoc | Isc | Rs | Rsh | FF | NCell |
| 0.624 | 8.52 | 0.0027 | 186.16 | 78.15 | 17.11% |
From above-mentioned experimental result it can be seen that polysilicon solar battery slice identical for Reducing thickness, that reflectance is different,
The cell piece efficiency that cell piece efficiency that reflectance is low is higher than reflectance exceeds 0.1%.As can be seen here, the present invention is used to provide
Technical scheme, in the case of ensureing that extent of corrosion is identical, by reducing HNO in solution3Concentration can reach same Reducing thickness
The silicon chip of different reflectivity, antiradar reflectivity is conducive to provide the photoelectric transformation efficiency of polysilicon solar battery slice.
Claims (1)
1. the method reducing polysilicon making herbs into wool surface reflectivity, it is characterised in that comprise the steps:
Step 1, at HNO3Volume fraction 63%, HF volume fraction 9%, in the solution of pure water volume fraction 28%, temperature is 8 DEG C,
Etching time is 90 seconds, records polysilicon chip surface reflectivity 25.5% under the conditions of this, and Reducing thickness is 0.43g；
Step 2, under conditions of step 1, stop add HNO3, it is ensured that HF normally adds, and after continuing 60 minutes, records the most
Crystal silicon chip surface reflectivity drops to 23.2%, then through 10 minutes, records polysilicon chip surface reflectivity and drop to 22.6%；
Step 3, treat that surface reflectivity is reduced to 22.6%, when Reducing thickness keeps 0.43g, normally add HNO3And HF.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210323936.9A CN102851743B (en) | 2012-09-05 | 2012-09-05 | A kind of method reducing polysilicon making herbs into wool surface reflectivity |
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| CN201210323936.9A CN102851743B (en) | 2012-09-05 | 2012-09-05 | A kind of method reducing polysilicon making herbs into wool surface reflectivity |
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| CN102851743A CN102851743A (en) | 2013-01-02 |
| CN102851743B true CN102851743B (en) | 2016-12-21 |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105696083B (en) * | 2016-01-29 | 2018-03-09 | 盐城阿特斯协鑫阳光电力科技有限公司 | A kind of preparation method of solar battery pile face |
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| CN101935884A (en) * | 2009-07-02 | 2011-01-05 | 比亚迪股份有限公司 | Method for preparing textured polycrystalline silicon wafer |
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Address after: The new warehouse Town Pinghu Road, Jiaxing City, 314206 children in Zhejiang Province Applicant after: ZHEJIANG FORTUNE ENERGY CO., LTD. Address before: The new warehouse Town Pinghu Road, Jiaxing City, 314206 children in Zhejiang Province Applicant before: Zhejiang Fortune Photovoltaic Co.,Ltd. |
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