CN102851743A - Method for reducing surface reflectivity during polycrystalline silicon texturing - Google Patents

Method for reducing surface reflectivity during polycrystalline silicon texturing Download PDF

Info

Publication number
CN102851743A
CN102851743A CN2012103239369A CN201210323936A CN102851743A CN 102851743 A CN102851743 A CN 102851743A CN 2012103239369 A CN2012103239369 A CN 2012103239369A CN 201210323936 A CN201210323936 A CN 201210323936A CN 102851743 A CN102851743 A CN 102851743A
Authority
CN
China
Prior art keywords
reflectivity
reduced
addition
hno
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2012103239369A
Other languages
Chinese (zh)
Other versions
CN102851743B (en
Inventor
冯晓军
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ZHEJIANG FORTUNE PHOTOVOLTAIC CO Ltd
Original Assignee
ZHEJIANG FORTUNE PHOTOVOLTAIC CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ZHEJIANG FORTUNE PHOTOVOLTAIC CO Ltd filed Critical ZHEJIANG FORTUNE PHOTOVOLTAIC CO Ltd
Priority to CN201210323936.9A priority Critical patent/CN102851743B/en
Publication of CN102851743A publication Critical patent/CN102851743A/en
Application granted granted Critical
Publication of CN102851743B publication Critical patent/CN102851743B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

The present invention discloses a method for reducing surface reflectivity during polycrystalline silicon texturing, and particularly relates to reduction of the surface reflectivity when the surface reflectivity is high during application of polycrystalline silicon to carry out acid texturing. A scheme A comprises that: HNO3 addition is stopped, normal HF addition is ensured, and HNO3 concentration in the solution is reduced after maintaining for a certain time; along with the time lapse, after the reflectivity is reduced to within a required technical parameter range, normal HNO3 addition and normal HF addition are performed. A scheme B comprises that: water is added to reduce the whole concentration of HNO3 and HF, then HF is added, after the reflectivity is reduced to within a required technical parameter range, normal HNO3 addition and normal HF addition are performed. The method of the present invention has the following beneficial effects that: surface reflectivity after polycrystalline silicon texturing can be effectively reduced, bright sheets and color sheets caused by high reflectivity can be reduced, and a purpose of improvement of photoelectric conversion efficiency of the polycrystalline silicon solar cell sheet can be achieved.

Description

A kind of method that reduces polysilicon making herbs into wool surface albedo
Technical field
The present invention relates to the manufacture technology field of crystal silicon solar energy battery, be specifically related to a kind of method that reduces polysilicon making herbs into wool surface albedo in the making herbs into wool operation.
Background technology
In the production technique of crystal silicon solar batteries, silicon chip surface is corroded the surface albedo that the matte of preparing can reduce silicon chip effectively, surface albedo is one of important factor that affects the crystal silicon solar batteries photoelectric transformation efficiency.Because the diversity of polysilicon grain orientation adopts the alkali leather producing process can't obtain uniform matte, therefore can't effectively reduce the surface albedo of polysilicon.At present, in the preparation method of polycrystalline silicon suede, acid corrosion technology (being isotropic etch) can obtain evenly and the lower matte of reflectivity, can realize again the purpose of low cost, large-scale production.
Generally, in actual production process, the ordinary method that reduces silicon wafer wool making rear surface reflectivity is to adopt to promote belt speed or reduce HF and HNO 3Overall density realize.The method can reduce the silicon chip surface reflectivity, and the silicon slice corrosion amount also descends simultaneously, removes unclean so that cause the silicon chip affected layer.In actual production process, flower sheet, paillette also often can appear.These all can affect the photoelectric transformation efficiency of polysilicon solar battery slice.
Summary of the invention
The purpose of this invention is to provide a kind of method that reduces polysilicon making herbs into wool surface albedo, the method can be in the situation that the attenuate amount be constant, reduce polysilicon making herbs into wool surface albedo, the efficiency of conversion of Effective Raise solar cell can reduce the generation of colored sheet, paillette simultaneously.
The present invention solves that to reduce the technical scheme that the polysilicon surface reflectivity takes as follows:
In the situation that adopt polycrystalline silicic acid to prepare matte, surface albedo appears when too high, and adopt two kinds of technical schemes described below to reduce the reflectivity on polysilicon making herbs into wool surface.Concrete scheme is as follows:
Option A: stop to add HNO 3, guarantee that HF normally adds, continue after 60 minutes HNO in the solution 3Density loss, reflectivity reduces; As time goes on, HNO in the solution 3Density loss, reflectivity further descends; Treat that reflectivity is reduced in the technical parameter claimed range, normally adds HNO 3And HF.
Option b: add water and reduce HNO 3With the overall density of HF, and then by adding HF, the concentration that improves HF makes extent of corrosion constant, treats that reflectivity is reduced in the technical parameter claimed range, normally adds HNO 3And HF.
The invention has the beneficial effects as follows: adopt the surface albedo after technical scheme proposed by the invention can reduce polysilicon making herbs into wool effectively, can effectively reduce the paillette, the pattern sheet that cause because reflectivity is too high, reach the minimizing surface reflection, strengthen photoelectric absorption, thereby reach the purpose of the photoelectric transformation efficiency that improves polysilicon solar battery slice.
Embodiment
The below is according to a kind of method that reduces polysilicon making herbs into wool surface albedo provided by the invention, and the specific embodiments below adopting is described further.The present embodiment is to carry out under the technique of making herbs into wool, diffusion, wax spray, etching, each procedure of the silk screen printing condition identical with former technique.Embodiment is as follows:
1. at HN0 3Volume fraction 63%, HF volume fraction 9%, in the solution of pure water volume fraction 28%, temperature is 8 ℃, and etching time is 90 seconds, records polysilicon chip surface albedo 25.5% under this condition, and the attenuate amount is 0.43g.
2. under the condition of step 1, stop to add HNO 3, guarantee that HF normally adds, continue after 60 minutes, record this moment polysilicon chip surface albedo and drop to 23.2%, again through 10 minutes, record the polysilicon chip surface albedo and drop to 22.6%.
3. treat that reflectivity is reduced to 22.6%, when the attenuate amount keeps 0.43g, normally add HNO 3And HF.
To place under the standard test condition through the polysilicon solar battery slice of complete processing procedure processing and detect, and take unit for electrical property parameters that technical scheme provided by the invention and former technical scheme carry out the polysilicon solar battery slice that making herbs into wool processes as shown in Table 1 and Table 2.
Table 1 adopts the unit for electrical property parameters of the polysilicon solar battery slice of technical scheme preparation of the present invention
Uoc Isc Rs Rsh FF NCell
0.626 8.56 0.0028 202.99 78.07 17.21%
The unit for electrical property parameters of the polysilicon solar battery slice of the former technical scheme preparation of table 2
Uoc Isc Rs Rsh FF NCell
0.624 8.52 0.0027 186.16 78.15 17.11%
Can find out from above-mentioned experimental result, the polysilicon solar battery slice identical for the attenuate amount, that reflectivity is different, the cell piece efficient that the cell piece efficient that reflectivity is low is higher than reflectivity exceeds 0.1%.This shows, adopt to the invention provides technical scheme, in the situation that guarantee that extent of corrosion is identical, by reducing HNO in the solution 3Concentration can reach silicon chip with attenuate amount different reflectivity, antiradar reflectivity is conducive to provide the photoelectric transformation efficiency of polysilicon solar battery slice.

Claims (1)

1. method that reduces polysilicon making herbs into wool surface albedo, it is characterized in that: in the situation that adopt polycrystalline silicic acid to prepare matte, when the appearance surface albedo is too high, adopt two kinds of technical schemes described below to reduce the reflectivity on polysilicon making herbs into wool surface, the concrete technology step is as follows: option A: stop to add HNO 3, guarantee that HF normally adds HNO in the solution after the certain time 3Density loss, reflectivity reduces, As time goes on, HNO in the solution 3Density loss, reflectivity further descends, and treats that reflectivity is reduced in the technical parameter claimed range, normally adds HNO 3And HF; Option b: add water and reduce HNO 3With the overall density of HF, and then by adding HF, the concentration that improves HF makes extent of corrosion constant, treats that reflectivity is reduced in the technical parameter claimed range, normally adds HNO 3And HF.
CN201210323936.9A 2012-09-05 2012-09-05 A kind of method reducing polysilicon making herbs into wool surface reflectivity Active CN102851743B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210323936.9A CN102851743B (en) 2012-09-05 2012-09-05 A kind of method reducing polysilicon making herbs into wool surface reflectivity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210323936.9A CN102851743B (en) 2012-09-05 2012-09-05 A kind of method reducing polysilicon making herbs into wool surface reflectivity

Publications (2)

Publication Number Publication Date
CN102851743A true CN102851743A (en) 2013-01-02
CN102851743B CN102851743B (en) 2016-12-21

Family

ID=47398702

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210323936.9A Active CN102851743B (en) 2012-09-05 2012-09-05 A kind of method reducing polysilicon making herbs into wool surface reflectivity

Country Status (1)

Country Link
CN (1) CN102851743B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105696083A (en) * 2016-01-29 2016-06-22 盐城阿特斯协鑫阳光电力科技有限公司 Preparation method of solar cell textured structure

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101876088A (en) * 2010-03-19 2010-11-03 常州亿晶光电科技有限公司 Polycrystalline silicon texturing method
CN101935884A (en) * 2009-07-02 2011-01-05 比亚迪股份有限公司 Method for preparing textured polycrystalline silicon wafer
CN102181940A (en) * 2011-04-08 2011-09-14 光为绿色新能源有限公司 Preparation method of multicrystalline silicon texture
CN102212885A (en) * 2011-04-27 2011-10-12 江阴浚鑫科技有限公司 Texturing method for polycrystalline silicon solar cells
CN102259864A (en) * 2010-05-31 2011-11-30 比亚迪股份有限公司 Preparation method of solar polycrystalline silicon wafer
CN102296369A (en) * 2011-09-13 2011-12-28 江阴鑫辉太阳能有限公司 Polycrystalline silicon acid texturing process
CN102330156A (en) * 2011-08-12 2012-01-25 无锡尚品太阳能电力科技有限公司 Polycrystalline silicon etching solution in solar cell and polycrystalline silicon etching process
CN102544199A (en) * 2011-12-15 2012-07-04 浙江鸿禧光伏科技股份有限公司 Method for acid-etching honeycomb structure of crystalline silicon cell

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101935884A (en) * 2009-07-02 2011-01-05 比亚迪股份有限公司 Method for preparing textured polycrystalline silicon wafer
CN101876088A (en) * 2010-03-19 2010-11-03 常州亿晶光电科技有限公司 Polycrystalline silicon texturing method
CN102259864A (en) * 2010-05-31 2011-11-30 比亚迪股份有限公司 Preparation method of solar polycrystalline silicon wafer
CN102181940A (en) * 2011-04-08 2011-09-14 光为绿色新能源有限公司 Preparation method of multicrystalline silicon texture
CN102212885A (en) * 2011-04-27 2011-10-12 江阴浚鑫科技有限公司 Texturing method for polycrystalline silicon solar cells
CN102330156A (en) * 2011-08-12 2012-01-25 无锡尚品太阳能电力科技有限公司 Polycrystalline silicon etching solution in solar cell and polycrystalline silicon etching process
CN102296369A (en) * 2011-09-13 2011-12-28 江阴鑫辉太阳能有限公司 Polycrystalline silicon acid texturing process
CN102544199A (en) * 2011-12-15 2012-07-04 浙江鸿禧光伏科技股份有限公司 Method for acid-etching honeycomb structure of crystalline silicon cell

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
吕肖前等: ""多晶Si太阳电池新型制绒工艺研究"", 《光电子.激光》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105696083A (en) * 2016-01-29 2016-06-22 盐城阿特斯协鑫阳光电力科技有限公司 Preparation method of solar cell textured structure
CN105696083B (en) * 2016-01-29 2018-03-09 盐城阿特斯协鑫阳光电力科技有限公司 A kind of preparation method of solar battery pile face

Also Published As

Publication number Publication date
CN102851743B (en) 2016-12-21

Similar Documents

Publication Publication Date Title
CN102181935B (en) Method and corrosive liquid for making texture surface of monocrystalline silicon
CN103614778A (en) Alcohol-free alkaline texturing solution for mono-crystalline silicon wafer, texturing method for mono-crystalline silicon wafer, solar cell and manufacturing method for solar cell
CN102931290A (en) Polycrystalline silicon solar cell reworking method without damaging suede
CN103378212B (en) Texturing method for solar cell
CN104362221A (en) Method for preparing polycrystalline silicon solar cell by RIE texturing
CN102296369A (en) Polycrystalline silicon acid texturing process
CN103981575B (en) Annealing and wool-making method for monocrystalline silicon wafer
CN102034900A (en) Texture etching method for quasi-monocrystalline silicon wafer
CN104562211A (en) Texture surface making method capable of improving conversion efficiency of monocrystal cell
CN102703903A (en) Alkali texture making technology
CN104505425A (en) Method for preparing solar monocrystal back polished cell piece
CN102569502A (en) Wet method etching process
CN101976704B (en) Laser and acid etching combined texturing process
CN107393818B (en) Acid-base secondary texturing method of polycrystalline silicon solar cell and polycrystalline silicon thereof
CN104060325A (en) Polycrystalline silicon texturing solution and texturing method thereof
CN1983644A (en) Production of monocrystalline silicon solar battery suede
CN101609862A (en) A kind of method that reduces surface reflectivity of texture mono-crystalline silicon chip
CN102163549A (en) Treating fluid for bad chip after crystalline silicon film coating and treating method thereof
CN102496660A (en) Acid-base combined monocrystalline silicon solar cell texturing method
CN109980043A (en) A kind of efficient volume production preparation method of the black silicon wafer of wet process
CN102332501B (en) Washing method for removing flower basket mark in process of producing solar cell
CN101447530B (en) Process for cleaning sizing agent used for etching silicon dioxide mask
CN102263154A (en) Method for improving texture-making surface conditions of solar cells
CN102851743A (en) Method for reducing surface reflectivity during polycrystalline silicon texturing
CN204167329U (en) Metallurgy polycrystalline silicon solar battery sheet and solar panel

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C53 Correction of patent of invention or patent application
CB02 Change of applicant information

Address after: The new warehouse Town Pinghu Road, Jiaxing City, 314206 children in Zhejiang Province

Applicant after: ZHEJIANG FORTUNE ENERGY CO., LTD.

Address before: The new warehouse Town Pinghu Road, Jiaxing City, 314206 children in Zhejiang Province

Applicant before: Zhejiang Fortune Photovoltaic Co.,Ltd.

COR Change of bibliographic data

Free format text: CORRECT: APPLICANT; FROM: ZHEJIANG FORTUNE PHOTOVOLTAIC CO.,LTD. TO: ZHEJIANG HONGXI ENERGY CO., LTD.

C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant