CN108231956B - Cleaning tank process for black silicon battery piece - Google Patents
Cleaning tank process for black silicon battery piece Download PDFInfo
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- CN108231956B CN108231956B CN201810020322.0A CN201810020322A CN108231956B CN 108231956 B CN108231956 B CN 108231956B CN 201810020322 A CN201810020322 A CN 201810020322A CN 108231956 B CN108231956 B CN 108231956B
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- 238000004140 cleaning Methods 0.000 title claims abstract description 176
- 229910021418 black silicon Inorganic materials 0.000 title claims abstract description 118
- 238000000034 method Methods 0.000 title claims abstract description 75
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 159
- 238000005406 washing Methods 0.000 claims abstract description 69
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 24
- 238000001035 drying Methods 0.000 claims abstract description 21
- 239000003513 alkali Substances 0.000 claims abstract description 16
- 230000005587 bubbling Effects 0.000 claims description 70
- 239000002253 acid Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 230000018044 dehydration Effects 0.000 claims description 10
- 238000006297 dehydration reaction Methods 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 5
- 238000000605 extraction Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000012530 fluid Substances 0.000 claims 1
- 238000001802 infusion Methods 0.000 claims 1
- 239000012452 mother liquor Substances 0.000 claims 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052681 coesite Inorganic materials 0.000 abstract description 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 4
- 239000000428 dust Substances 0.000 abstract description 4
- 239000012535 impurity Substances 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 150000003839 salts Chemical class 0.000 abstract description 4
- 239000000377 silicon dioxide Substances 0.000 abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 4
- 229910052682 stishovite Inorganic materials 0.000 abstract description 4
- 229910052905 tridymite Inorganic materials 0.000 abstract description 4
- 230000002035 prolonged effect Effects 0.000 abstract description 3
- 238000005554 pickling Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 6
- 239000010413 mother solution Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Hybrid Cells (AREA)
Abstract
The invention discloses a cleaning tank process for a black silicon battery piece, which comprises the following process steps: pre-cleaning; cleaning with pure water for the first time; texturing; cleaning with pure water for the second time; HNO3 cleaning; washing with pure water for the third time; cleaning with HF + HCL + H2O 2; fourth pure water cleaning; alkali washing; fifth pure water cleaning; cleaning with HCL + H2O 2; washing with pure water for the sixth time; pickling with HF and HCL; washing with pure water for the seventh time; pre-dewatering; drying in a groove mode; the black silicon cell is thoroughly cleaned by the cleaning tank process of the black silicon cell, so that impurities such as organic matters, inorganic salts, metal, Si, SiO2 dust and the like are thoroughly removed, the service life of the black silicon cell is prolonged, the overall economic cost is reduced, and convenience is brought to the use of related products.
Description
Technical Field
The invention relates to a cleaning tank process, in particular to a cleaning tank process for a black silicon battery piece.
Background
The black silicon cell plate is not visually different from the conventional blue silicon solar cell except that the color is changed to black, but actually, the black silicon solar cell is much more efficient than the conventional silicon solar cell. The black silicon technology paves the way for large-area popularization of diamond wire cutting in the field of polycrystalline slices. The black silicon technology can also be fused with other silicon chip and battery industrialization technologies, so that the conversion efficiency of the polycrystalline battery is fundamentally improved, and the cost of the photovoltaic module is reduced. The black silicon technology will replace the conventional polycrystalline texturing and become the standard technology of the future polycrystalline cell manufacturing process.
At present, the process of a cleaning tank for the black silicon battery piece is incomplete, the cleaning is incomplete, impurities on the surface of the black silicon battery piece, such as organic matters, inorganic salts, metal, Si, SiO2 dust and the like, are not completely cleaned, and the subsequent use of the black silicon battery piece is inconvenient.
Disclosure of Invention
The invention provides a cleaning tank process for a black silicon battery piece, which can effectively solve the problems in the background technology.
The technical scheme of the invention is summarized as follows:
a cleaning tank process for a black silicon cell comprises the following process steps:
step 1, pre-cleaning: firstly, loading black silicon battery pieces to be cleaned, and after loading, processing the black silicon battery pieces for 1min at a certain temperature in a circulating and bubbling manner by using a processing liquid for assistance, wherein circulating air draft is continuously performed in the process;
step 2, cleaning with pure water for the first time: carrying out pure water cleaning on the cleaned black silicon cell, and cleaning for 2min in an overflow and bubbling manner by using DI water for assistance;
step 3, texturing: processing the black silicon battery piece subjected to the first pure water cleaning for 3.5min at a certain temperature in a circulating, cooling, heating and bubbling manner by using the processing liquid for assistance, wherein the processing is performed twice in the process, and comprises continuously performing circulating air draft;
and 4, cleaning with pure water for the second time: cleaning the textured black silicon cell with pure water, and cleaning for 2min in an overflow and bubbling manner by using DI water for assistance, wherein the cleaning process is carried out twice;
step 5, HNO3 cleaning: cleaning the black silicon cell piece subjected to the secondary pure water cleaning by HNO3, processing for 3min in a bubbling manner by using HNO3 as an assistant, processing twice in the process, and continuously performing air draft;
step 6, washing with pure water for the third time: cleaning the black silicon cell piece subjected to the HNO3 cleaning treatment by pure water, and cleaning for 2min in an overflow and bubbling manner by using DI water for assistance;
step 7, cleaning by using HF + HCL + H2O 2: cleaning the black silicon battery piece subjected to pure water cleaning for the third time by using HF + HCL + H2O2, and treating for 2min in a bubbling manner by using the assistance of HF + HCL + H2O2, wherein air draft is continuously performed in the process;
step 8, washing with pure water for the fourth time: cleaning the black silicon battery piece cleaned by HF + HCL + H2O2 with pure water, and cleaning for 2min in an overflow and bubbling manner by using DI water;
step 9, alkali washing: performing alkali washing on the black silicon battery piece subjected to pure water washing for the fourth time, treating for 1min at a certain temperature in a bubbling manner by using KOH for assistance, and continuously performing air draft in the process;
step 10, fifth pure water cleaning: washing the black silicon battery piece subjected to alkali washing with pure water, and washing for 2min in an overflow and bubbling manner by using DI water as an auxiliary material;
step 11, cleaning with HCl + H2O 2: cleaning the black silicon cell piece subjected to the fifth pure water cleaning by using HCL + H2O2, and treating for 1min in a bubbling manner by using HCL + H2O2 as an assistant, wherein air draft is continuously performed in the process;
step 12, washing with pure water for the sixth time: cleaning the black silicon cell piece cleaned by HCL + H2O2 with pure water, and cleaning for 2min in an overflow and bubbling manner by using DI water as an auxiliary material;
step 13, acid washing with HF + HCL: carrying out HF + HCL acid washing on the black silicon battery piece subjected to the sixth pure water washing, carrying out bubbling treatment for 2min by using HF + HCL assistance, and continuously carrying out air draft in the process;
step 14, washing with pure water for the seventh time: cleaning the black silicon battery piece subjected to HF + HCL acid cleaning by pure water, and cleaning for 2min in an overflow and bubbling manner by using DI water as an auxiliary material;
step 15, pre-dehydration: carrying out pre-dehydration on the black silicon cell after the seventh pure water cleaning, treating for 2min at a certain temperature in a slow-extraction mode by using DI water for assistance, and continuously exhausting air in the process;
step 16, groove type drying: performing slot type drying on the pre-dehydrated black silicon battery piece, and performing on-line drying for 6min at a certain temperature by using hot nitrogen for assistance, wherein the process is performed twice and air draft is continuously performed;
step 17, blanking: and (5) carrying out blanking on the black silicon battery piece subjected to groove type drying treatment.
Preferably, the treatment solution in the step 1 is HF + HNO3, and the temperature in the step 1 is 7-9 ℃.
Preferably, the treatment solution in the step 3 is HF + H2O2+ ADD mother solution + ADD supplementary solution, and the temperature in the step 3 is 25-30 ℃.
Preferably, the temperature in said step 9 does not exceed 30 ℃.
Preferably, the temperature in said step 15 is 50-80 ℃.
Preferably, the temperature in said step 16 is not more than 80 ℃.
Compared with the prior art, the invention has the beneficial effects that: the cleaning tank process for the black silicon battery piece is complete and compact in technical design, and the cleaning tank process for the black silicon battery piece can thoroughly clean the black silicon battery piece, so that impurities such as organic matters, inorganic salts, metal, Si, SiO2 dust and the like can be thoroughly removed, the service life of the cleaning tank process is prolonged, the overall economic cost is reduced, and convenience is brought to the use of related products.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, rather than all embodiments, and all other embodiments obtained by those skilled in the art without any creative work based on the embodiments of the present invention belong to the protection scope of the present invention.
Example one
A cleaning tank process for a black silicon cell comprises the following process steps:
step 1, pre-cleaning: firstly, loading black silicon battery pieces to be cleaned, and after loading, processing the black silicon battery pieces for 1min at a certain temperature in a circulating and bubbling manner by using a processing liquid for assistance, wherein circulating air draft is continuously performed in the process;
step 2, cleaning with pure water for the first time: carrying out pure water cleaning on the cleaned black silicon cell, and cleaning for 2min in an overflow and bubbling manner by using DI water for assistance;
step 3, texturing: processing the black silicon battery piece subjected to the first pure water cleaning for 3.5min at a certain temperature in a circulating, cooling, heating and bubbling manner by using the processing liquid for assistance, wherein the processing is performed twice in the process, and comprises continuously performing circulating air draft;
and 4, cleaning with pure water for the second time: cleaning the textured black silicon cell with pure water, and cleaning for 2min in an overflow and bubbling manner by using DI water for assistance, wherein the cleaning process is carried out twice;
step 5, HNO3 cleaning: cleaning the black silicon cell piece subjected to the secondary pure water cleaning by HNO3, processing for 3min in a bubbling manner by using HNO3 as an assistant, processing twice in the process, and continuously performing air draft;
step 6, washing with pure water for the third time: cleaning the black silicon cell piece subjected to the HNO3 cleaning treatment by pure water, and cleaning for 2min in an overflow and bubbling manner by using DI water for assistance;
step 7, cleaning by using HF + HCL + H2O 2: cleaning the black silicon battery piece subjected to pure water cleaning for the third time by using HF + HCL + H2O2, and treating for 2min in a bubbling manner by using the assistance of HF + HCL + H2O2, wherein air draft is continuously performed in the process;
step 8, washing with pure water for the fourth time: cleaning the black silicon battery piece cleaned by HF + HCL + H2O2 with pure water, and cleaning for 2min in an overflow and bubbling manner by using DI water;
step 9, alkali washing: performing alkali washing on the black silicon battery piece subjected to pure water washing for the fourth time, treating for 1min at a certain temperature in a bubbling manner by using KOH for assistance, and continuously performing air draft in the process;
step 10, fifth pure water cleaning: washing the black silicon battery piece subjected to alkali washing with pure water, and washing for 2min in an overflow and bubbling manner by using DI water as an auxiliary material;
step 11, cleaning with HCl + H2O 2: cleaning the black silicon cell piece subjected to the fifth pure water cleaning by using HCL + H2O2, and treating for 1min in a bubbling manner by using HCL + H2O2 as an assistant, wherein air draft is continuously performed in the process;
step 12, washing with pure water for the sixth time: cleaning the black silicon cell piece cleaned by HCL + H2O2 with pure water, and cleaning for 2min in an overflow and bubbling manner by using DI water as an auxiliary material;
step 13, acid washing with HF + HCL: carrying out HF + HCL acid washing on the black silicon battery piece subjected to the sixth pure water washing, carrying out bubbling treatment for 2min by using HF + HCL assistance, and continuously carrying out air draft in the process;
step 14, washing with pure water for the seventh time: cleaning the black silicon battery piece subjected to HF + HCL acid cleaning by pure water, and cleaning for 2min in an overflow and bubbling manner by using DI water as an auxiliary material;
step 15, pre-dehydration: carrying out pre-dehydration on the black silicon cell after the seventh pure water cleaning, treating for 2min at a certain temperature in a slow-extraction mode by using DI water for assistance, and continuously exhausting air in the process;
step 16, groove type drying: performing slot type drying on the pre-dehydrated black silicon battery piece, and performing on-line drying for 6min at a certain temperature by using hot nitrogen for assistance, wherein the process is performed twice and air draft is continuously performed;
step 17, blanking: and (5) carrying out blanking on the black silicon battery piece subjected to groove type drying treatment.
In this example, the treatment solution in step 1 was HF + HNO3, and the temperature in step 1 was 7 ℃.
In this example, the treatment solution in step 3 was HF + H2O2+ ADD mother solution + ADD make-up solution, and the temperature in step 3 was 25 ℃.
In this example, the temperature in step 9 does not exceed 30 ℃.
In this example, the temperature in step 15 was 50 ℃.
In this example, the temperature in step 16 is not more than 80 ℃.
Example two
A cleaning tank process for a black silicon cell comprises the following process steps:
step 1, pre-cleaning: firstly, loading black silicon battery pieces to be cleaned, and after loading, processing the black silicon battery pieces for 1min at a certain temperature in a circulating and bubbling manner by using a processing liquid for assistance, wherein circulating air draft is continuously performed in the process;
step 2, cleaning with pure water for the first time: carrying out pure water cleaning on the cleaned black silicon cell, and cleaning for 2min in an overflow and bubbling manner by using DI water for assistance;
step 3, texturing: processing the black silicon battery piece subjected to the first pure water cleaning for 3.5min at a certain temperature in a circulating, cooling, heating and bubbling manner by using the processing liquid for assistance, wherein the processing is performed twice in the process, and comprises continuously performing circulating air draft;
and 4, cleaning with pure water for the second time: cleaning the textured black silicon cell with pure water, and cleaning for 2min in an overflow and bubbling manner by using DI water for assistance, wherein the cleaning process is carried out twice;
step 5, HNO3 cleaning: cleaning the black silicon cell piece subjected to the secondary pure water cleaning by HNO3, processing for 3min in a bubbling manner by using HNO3 as an assistant, processing twice in the process, and continuously performing air draft;
step 6, washing with pure water for the third time: cleaning the black silicon cell piece subjected to the HNO3 cleaning treatment by pure water, and cleaning for 2min in an overflow and bubbling manner by using DI water for assistance;
step 7, cleaning by using HF + HCL + H2O 2: cleaning the black silicon battery piece subjected to pure water cleaning for the third time by using HF + HCL + H2O2, and treating for 2min in a bubbling manner by using the assistance of HF + HCL + H2O2, wherein air draft is continuously performed in the process;
step 8, washing with pure water for the fourth time: cleaning the black silicon battery piece cleaned by HF + HCL + H2O2 with pure water, and cleaning for 2min in an overflow and bubbling manner by using DI water;
step 9, alkali washing: performing alkali washing on the black silicon battery piece subjected to pure water washing for the fourth time, treating for 1min at a certain temperature in a bubbling manner by using KOH for assistance, and continuously performing air draft in the process;
step 10, fifth pure water cleaning: washing the black silicon battery piece subjected to alkali washing with pure water, and washing for 2min in an overflow and bubbling manner by using DI water as an auxiliary material;
step 11, cleaning with HCl + H2O 2: cleaning the black silicon cell piece subjected to the fifth pure water cleaning by using HCL + H2O2, and treating for 1min in a bubbling manner by using HCL + H2O2 as an assistant, wherein air draft is continuously performed in the process;
step 12, washing with pure water for the sixth time: cleaning the black silicon cell piece cleaned by HCL + H2O2 with pure water, and cleaning for 2min in an overflow and bubbling manner by using DI water as an auxiliary material;
step 13, acid washing with HF + HCL: carrying out HF + HCL acid washing on the black silicon battery piece subjected to the sixth pure water washing, carrying out bubbling treatment for 2min by using HF + HCL assistance, and continuously carrying out air draft in the process;
step 14, washing with pure water for the seventh time: cleaning the black silicon battery piece subjected to HF + HCL acid cleaning by pure water, and cleaning for 2min in an overflow and bubbling manner by using DI water as an auxiliary material;
step 15, pre-dehydration: carrying out pre-dehydration on the black silicon cell after the seventh pure water cleaning, treating for 2min at a certain temperature in a slow-extraction mode by using DI water for assistance, and continuously exhausting air in the process;
step 16, groove type drying: performing slot type drying on the pre-dehydrated black silicon battery piece, and performing on-line drying for 6min at a certain temperature by using hot nitrogen for assistance, wherein the process is performed twice and air draft is continuously performed;
step 17, blanking: and (5) carrying out blanking on the black silicon battery piece subjected to groove type drying treatment.
In this example, the treatment solution in step 1 was HF + HNO3, and the temperature in step 1 was 9 ℃.
In the embodiment, the treatment solution in the step 3 is HF + H2O2+ ADD mother solution + ADD supplementary solution, and the temperature in the step 3 is 25-30 ℃.
In this example, the temperature in step 9 does not exceed 30 ℃.
In this example, the temperature in step 15 was 80 ℃.
In this example, the temperature in step 16 is not more than 80 ℃.
EXAMPLE III
A cleaning tank process for a black silicon cell comprises the following process steps:
step 1, pre-cleaning: firstly, loading black silicon battery pieces to be cleaned, and after loading, processing the black silicon battery pieces for 1min at a certain temperature in a circulating and bubbling manner by using a processing liquid for assistance, wherein circulating air draft is continuously performed in the process;
step 2, cleaning with pure water for the first time: carrying out pure water cleaning on the cleaned black silicon cell, and cleaning for 2min in an overflow and bubbling manner by using DI water for assistance;
step 3, texturing: processing the black silicon battery piece subjected to the first pure water cleaning for 3.5min at a certain temperature in a circulating, cooling, heating and bubbling manner by using the processing liquid for assistance, wherein the processing is performed twice in the process, and comprises continuously performing circulating air draft;
and 4, cleaning with pure water for the second time: cleaning the textured black silicon cell with pure water, and cleaning for 2min in an overflow and bubbling manner by using DI water for assistance, wherein the cleaning process is carried out twice;
step 5, HNO3 cleaning: cleaning the black silicon cell piece subjected to the secondary pure water cleaning by HNO3, processing for 3min in a bubbling manner by using HNO3 as an assistant, processing twice in the process, and continuously performing air draft;
step 6, washing with pure water for the third time: cleaning the black silicon cell piece subjected to the HNO3 cleaning treatment by pure water, and cleaning for 2min in an overflow and bubbling manner by using DI water for assistance;
step 7, cleaning by using HF + HCL + H2O 2: cleaning the black silicon battery piece subjected to pure water cleaning for the third time by using HF + HCL + H2O2, and treating for 2min in a bubbling manner by using the assistance of HF + HCL + H2O2, wherein air draft is continuously performed in the process;
step 8, washing with pure water for the fourth time: cleaning the black silicon battery piece cleaned by HF + HCL + H2O2 with pure water, and cleaning for 2min in an overflow and bubbling manner by using DI water;
step 9, alkali washing: performing alkali washing on the black silicon battery piece subjected to pure water washing for the fourth time, treating for 1min at a certain temperature in a bubbling manner by using KOH for assistance, and continuously performing air draft in the process;
step 10, fifth pure water cleaning: washing the black silicon battery piece subjected to alkali washing with pure water, and washing for 2min in an overflow and bubbling manner by using DI water as an auxiliary material;
step 11, cleaning with HCl + H2O 2: cleaning the black silicon cell piece subjected to the fifth pure water cleaning by using HCL + H2O2, and treating for 1min in a bubbling manner by using HCL + H2O2 as an assistant, wherein air draft is continuously performed in the process;
step 12, washing with pure water for the sixth time: cleaning the black silicon cell piece cleaned by HCL + H2O2 with pure water, and cleaning for 2min in an overflow and bubbling manner by using DI water as an auxiliary material;
step 13, acid washing with HF + HCL: carrying out HF + HCL acid washing on the black silicon battery piece subjected to the sixth pure water washing, carrying out bubbling treatment for 2min by using HF + HCL assistance, and continuously carrying out air draft in the process;
step 14, washing with pure water for the seventh time: cleaning the black silicon battery piece subjected to HF + HCL acid cleaning by pure water, and cleaning for 2min in an overflow and bubbling manner by using DI water as an auxiliary material;
step 15, pre-dehydration: carrying out pre-dehydration on the black silicon cell after the seventh pure water cleaning, treating for 2min at a certain temperature in a slow-extraction mode by using DI water for assistance, and continuously exhausting air in the process;
step 16, groove type drying: performing slot type drying on the pre-dehydrated black silicon battery piece, and performing on-line drying for 6min at a certain temperature by using hot nitrogen for assistance, wherein the process is performed twice and air draft is continuously performed;
step 17, blanking: and (5) carrying out blanking on the black silicon battery piece subjected to groove type drying treatment.
In this example, the treatment solution in step 1 was HF + HNO3, and the temperature in step 1 was 8 ℃.
In this example, the treatment solution in step 3 was HF + H2O2+ ADD mother solution + ADD make-up solution, and the temperature in step 3 was 27.5 ℃.
In this example, the temperature in step 9 does not exceed 30 ℃.
In this example, the temperature in step 15 was 65 ℃.
In this example, the temperature in step 16 is not more than 80 ℃.
The cleaning tank process for the black silicon battery piece is complete and compact in technical design, and the cleaning tank process for the black silicon battery piece can thoroughly clean the black silicon battery piece, so that impurities such as organic matters, inorganic salts, metal, Si, SiO2 dust and the like can be thoroughly removed, the service life of the cleaning tank process is prolonged, the overall economic cost is reduced, and convenience is brought to the use of related products.
While embodiments of the invention have been disclosed above, it is not limited to the applications listed in the description and the embodiments, which are fully applicable in all kinds of fields of adaptation of the invention, and further modifications can be easily implemented by those skilled in the art, so that the invention is not limited to the specific details and the examples shown herein, without departing from the general concept defined by the claims and the scope of equivalents.
Claims (1)
1. A cleaning tank process for a black silicon cell is characterized by comprising the following process steps:
step 1, pre-cleaning: firstly, loading black silicon battery pieces to be cleaned, and utilizing HF + HNO after loading3Treating the black silicon battery piece for 1min at the temperature of 7-9 ℃ in a circulating and bubbling manner with the aid of the mixed liquid, and continuously performing circulating air draft in the process;
step 2, cleaning with pure water for the first time: carrying out pure water cleaning on the cleaned black silicon cell, and cleaning for 2min in an overflow and bubbling manner by using DI water for assistance;
step 3, texturing: the black silicon cell after the first pure water cleaning is cleaned by using HF + H2O2Treating the black silicon battery piece for 3.5min at the temperature of 25-30 ℃ in a circulating, cooling, heating and bubbling mode with the aid of + ADD mother liquor + ADD fluid infusion, wherein the treatment is carried out twice in the process, and comprises continuously carrying out circulating air draft;
and 4, cleaning with pure water for the second time: cleaning the textured black silicon cell with pure water, and cleaning for 2min in an overflow and bubbling manner by using DI water for assistance, wherein the cleaning process is carried out twice;
step 5, HNO3Cleaning: performing HNO on the black silicon cell after the secondary pure water cleaning3Cleaning with HNO3Processing for 3min in a bubbling manner, wherein the processing is carried out twice in the process, and air draft is continuously carried out;
step 6, washing with pure water for the third time: adding HNO3Cleaning the cleaned black silicon cell with pure water, and cleaning for 2min in an overflow and bubbling manner by using DI water;
step 7, HF + HCL + H2O2Cleaning: carrying out HF + HCL + H treatment on the black silicon cell after the third pure water cleaning2O2Cleaning with HF + HCL + H2O2Processing for 2min in bubbling mode, and continuously performing air draft in the process;
step 8, washing with pure water for the fourth time: HF + HCL + H2O2Cleaning the cleaned black silicon cell with pure water, overflowing and bubbling with DI waterCleaning for 2 min;
step 9, alkali washing: performing alkali washing on the black silicon battery piece subjected to pure water washing for the fourth time, treating for 1min at a certain temperature in a bubbling manner by using KOH for assistance, and continuously performing air draft in the process;
step 10, fifth pure water cleaning: washing the black silicon battery piece subjected to alkali washing with pure water, and washing for 2min in an overflow and bubbling manner by using DI water as an auxiliary material;
step 11, HCL + H2O2Cleaning: subjecting the black silicon cell after fifth pure water cleaning to HCL + H2O2Cleaning with HCL + H2O2Processing for 1min in a bubbling manner in an auxiliary manner, and continuously performing air draft in the process;
step 12, washing with pure water for the sixth time: adding HCL + H2O2Cleaning the cleaned black silicon cell by pure water, and cleaning for 2min in an overflow and bubbling manner by using DI water for assistance;
step 13, acid washing with HF + HCL: carrying out HF + HCL acid washing on the black silicon battery piece subjected to the sixth pure water washing, carrying out bubbling treatment for 2min by using HF + HCL assistance, and continuously carrying out air draft in the process;
step 14, washing with pure water for the seventh time: cleaning the black silicon battery piece subjected to HF + HCL acid cleaning by pure water, and cleaning for 2min in an overflow and bubbling manner by using DI water as an auxiliary material;
step 15, pre-dehydration: carrying out pre-dehydration on the black silicon battery piece subjected to pure water cleaning for the seventh time, treating for 2min at the temperature of 50-80 ℃ in a slow-extraction mode by using DI water for assistance, and continuously exhausting air in the process;
step 16, groove type drying: performing slot type drying on the pre-dehydrated black silicon battery piece, processing for 6min at the temperature of no more than 80 ℃ in an online drying mode by using hot nitrogen for assistance, processing twice in the process, and continuously performing air draft;
step 17, blanking: and (5) carrying out blanking on the black silicon battery piece subjected to groove type drying treatment.
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