CN106676636A - Chemical additive for texture etching of silicon crystal surface - Google Patents
Chemical additive for texture etching of silicon crystal surface Download PDFInfo
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- CN106676636A CN106676636A CN201710018417.4A CN201710018417A CN106676636A CN 106676636 A CN106676636 A CN 106676636A CN 201710018417 A CN201710018417 A CN 201710018417A CN 106676636 A CN106676636 A CN 106676636A
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- silicon crystal
- crystal surface
- silicon
- water
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 39
- 239000010703 silicon Substances 0.000 title claims abstract description 38
- 239000013078 crystal Substances 0.000 title claims abstract description 27
- 239000000126 substance Substances 0.000 title claims abstract description 20
- 238000005530 etching Methods 0.000 title abstract description 6
- 239000000654 additive Substances 0.000 title abstract 4
- 230000000996 additive effect Effects 0.000 title abstract 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 15
- 238000005260 corrosion Methods 0.000 claims description 15
- 230000007797 corrosion Effects 0.000 claims description 15
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 9
- 239000002202 Polyethylene glycol Substances 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 229920001223 polyethylene glycol Polymers 0.000 claims description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- 150000001346 alkyl aryl ethers Chemical class 0.000 claims description 5
- 229920001515 polyalkylene glycol Polymers 0.000 claims description 5
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 claims description 4
- 241001272567 Hominoidea Species 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 4
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims description 4
- 239000003513 alkali Substances 0.000 claims description 4
- 239000000178 monomer Substances 0.000 claims description 4
- 238000006116 polymerization reaction Methods 0.000 claims description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 3
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 3
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 3
- TUSDEZXZIZRFGC-UHFFFAOYSA-N 1-O-galloyl-3,6-(R)-HHDP-beta-D-glucose Natural products OC1C(O2)COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC1C(O)C2OC(=O)C1=CC(O)=C(O)C(O)=C1 TUSDEZXZIZRFGC-UHFFFAOYSA-N 0.000 claims description 2
- DUIOKRXOKLLURE-UHFFFAOYSA-N 2-octylphenol Chemical compound CCCCCCCCC1=CC=CC=C1O DUIOKRXOKLLURE-UHFFFAOYSA-N 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 239000001263 FEMA 3042 Substances 0.000 claims description 2
- 229920001732 Lignosulfonate Polymers 0.000 claims description 2
- IGFHQQFPSIBGKE-UHFFFAOYSA-N Nonylphenol Natural products CCCCCCCCCC1=CC=C(O)C=C1 IGFHQQFPSIBGKE-UHFFFAOYSA-N 0.000 claims description 2
- LRBQNJMCXXYXIU-PPKXGCFTSA-N Penta-digallate-beta-D-glucose Natural products OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-PPKXGCFTSA-N 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- SVMUEEINWGBIPD-UHFFFAOYSA-N dodecylphosphonic acid Chemical compound CCCCCCCCCCCCP(O)(O)=O SVMUEEINWGBIPD-UHFFFAOYSA-N 0.000 claims description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 2
- LYGJENNIWJXYER-UHFFFAOYSA-N nitromethane Chemical compound C[N+]([O-])=O LYGJENNIWJXYER-UHFFFAOYSA-N 0.000 claims description 2
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical compound CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 claims description 2
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 2
- 150000008442 polyphenolic compounds Chemical class 0.000 claims description 2
- 235000013824 polyphenols Nutrition 0.000 claims description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 claims description 2
- 229920002258 tannic acid Polymers 0.000 claims description 2
- LRBQNJMCXXYXIU-NRMVVENXSA-N tannic acid Chemical compound OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-NRMVVENXSA-N 0.000 claims description 2
- 229940033123 tannic acid Drugs 0.000 claims description 2
- 235000015523 tannic acid Nutrition 0.000 claims description 2
- 229920002554 vinyl polymer Polymers 0.000 claims description 2
- -1 polyoxy Polymers 0.000 claims 2
- 125000000217 alkyl group Chemical group 0.000 claims 1
- YRIUSKIDOIARQF-UHFFFAOYSA-N dodecyl benzenesulfonate Chemical compound CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 YRIUSKIDOIARQF-UHFFFAOYSA-N 0.000 claims 1
- 229940071161 dodecylbenzenesulfonate Drugs 0.000 claims 1
- 229940035044 sorbitan monolaurate Drugs 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 4
- 238000002310 reflectometry Methods 0.000 abstract description 4
- 238000003795 desorption Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 239000004615 ingredient Substances 0.000 abstract 1
- 230000006911 nucleation Effects 0.000 abstract 1
- 238000010899 nucleation Methods 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 abstract 1
- 230000009103 reabsorption Effects 0.000 abstract 1
- 239000012752 auxiliary agent Substances 0.000 description 7
- 210000004027 cell Anatomy 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000012670 alkaline solution Substances 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229920001213 Polysorbate 20 Polymers 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229920000151 polyglycol Polymers 0.000 description 2
- 239000010695 polyglycol Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- NKJOXAZJBOMXID-UHFFFAOYSA-N 1,1'-Oxybisoctane Chemical compound CCCCCCCCOCCCCCCCC NKJOXAZJBOMXID-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- YDEXUEFDPVHGHE-GGMCWBHBSA-L disodium;(2r)-3-(2-hydroxy-3-methoxyphenyl)-2-[2-methoxy-4-(3-sulfonatopropyl)phenoxy]propane-1-sulfonate Chemical compound [Na+].[Na+].COC1=CC=CC(C[C@H](CS([O-])(=O)=O)OC=2C(=CC(CCCS([O-])(=O)=O)=CC=2)OC)=C1O YDEXUEFDPVHGHE-GGMCWBHBSA-L 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention belongs to the technical field of semiconductor silicon crystal surface etching, and particularly relates to a chemical additive for texture etching of the silicon crystal surface. In an etching process of preparation of texture graphs from crystalline silicon, the nucleation density, the desorption rate of reactive bubbles on the surface of a silicon wafer and reabsorption of the silicon wafer by the bubbles in a removal process are very important for texture uniformity. The chemical additive is characterized in that ingredients and proportioning are designed according to the several important functions, and the obtained chemical additive can help the crystal wafer form the texture surface with the uniform appearance and low reflectivity in an alkaline etching solution, and can significantly improve the photoelectric conversion efficiency when used for solar cells.
Description
Technical field
It is rotten the invention belongs to semiconductor silicon plane of crystal corrosion technology field, more particularly to a kind of monocrystalline silicon surface texturing
The chemical assistant of erosion.
Background technology
Solar energy because of its safety non-pollution, without geographical restrictions the advantages of greatly developed in recent years, especially with crystalline substance
Body silicon solar cell is that the photovoltaic application production development of representative is swift and violent, and more than 80% share is accounted in whole photovoltaic industry.
High efficiency, low cost are always pursuit constant during solar battery technology develops, and surface reflectivity is influence solar-electricity
One of direct factor of pond photoelectric transformation efficiency.Solar cell surface texturing techniques can effectively reduce solar cell
Surface reflectivity.For monocrystalline silicon, the monocrystalline silicon piece of current industrial circle selection (100) crystal orientation is matrix, using monocrystalline silicon
It is the Surface Texture of architectural feature that anisotropic etching characteristic of the piece in alkaline solution builds random pyramid in silicon chip surface
Change light trapping structure.
In the reaction with alkaline solution, if surface does not exist local annealing point, (100) crystal face is each for silicon chip
Equalization ground is corroded at place, it is impossible to realize pyramidal texture figure.If existed in reaction system made with silicon atom
Some auxiliary components, then these compositions can be randomly formed local annealing point on silicon wafer face, hinder the region by alkali
Corrosion；And the region not being passivated by auxiliary component, then with alkali reaction constantly to silicon chip internal corrosion.Due to the corruption of (111) crystal face
Erosion speed ratio (100) slow hundreds times of crystal face, therefore silicon chip can be formed with annealing point as top, four (111) crystal faces enclose after reaction
Into pyramidal texture figure.Pyramidal size and density are mainly determined by local passivation dot density.Silicon chip exists simultaneously
Can constantly there is hydrogen to separate out in corrosion process in alkaline solution, and bubble hydrogen is formed in silicon chip surface, bubble hydrogen is in silicon chip table
The desorption rate in face can produce influence to the uniformity of Surface Texture figure.Bubble is vertical along silicon chip surface during row's bubble in addition
Also contact of the corrosive liquid with silicon chip can be hindered during floating, so as to the uniformity to Surface Texture is impacted.The present invention
Preferably go out three kinds of components on the basis of many experiments, control respectively local passivation promote pyramid forming core, desorbing gas and
Exclude the influence corroded to surface-texturing during bubbly flow, the final pyramidal texturing for obtaining high homogeneity
Surface.
The content of the invention
A kind of chemical assistant of silicon crystal surface-texturing corrosion.
The chemical assistant of silicon crystal surface-texturing corrosion of the invention, it is characterised in that its component includes first component, matter
Amount percentage 0.01-40%；Component B, mass percent 0.01-50%；Third component, mass percent 0.01-50%；Fourth group
Part is the water of surplus.Described first component includes the mixing of one or more in polyethylene glycol and polyalkylene glycol monoalkyl ether
Thing；Described component B includes dimethylformamide, aniline, nitromethane, pyridine, 1-METHYLPYRROLIDONE, polyvinyl pyrrole
The mixture of one or more in alkanone, diethylene glycol monobutyl ether, diethylene glycol (DEG)；The third described component includes detergent alkylate sulphur
Hydrochlorate, dodecyl phosphonic acid ester salt, APES, polyoxyethylene 20 sorbitan monolaurate, ethyoxyl change
One or several mixture in property poly- trisiloxanes, Tea Polyphenols, tannic acid and lignosulfonates.
The chemical assistant of silicon crystal surface-texturing corrosion of the invention, polyethylene glycol and polyethyleneglycol in first component
The ethylene glycol monomers degree of polymerization in alkyl ether is 2-20, and the groups in polyalkylene glycol monoalkyl ether are with the increase of carbon number
From methyl to octyl group；
The chemical assistant of silicon crystal surface-texturing corrosion of the invention, the APES in the third component is selected
Octyl phenol or nonyl phenol, the ethylene glycol monomers degree of polymerization are 8-12.
The chemical assistant of silicon crystal surface-texturing corrosion of the invention, the water in fourth component is pure water；Preferably,
The alkali such as NaOH, potassium hydroxide are added in fourth component, the mass ratio of water is accounted for for 0.1-5%, regulation system is alkalescence；As
It is preferred that, the acid such as hydrochloric acid, acetic acid are added in fourth component, the mass ratio of water is accounted for for 0.1-5%, regulation system is acidity..
The present invention has an advantageous effect in that compared with background technology：
Chemical assistant for the corrosion of silicon crystal surface-texturing of the invention, forming core, drop are passivated by silicon chip surface
Low solution system surface tension, raising solution are to the design in terms of silicon chip surface wettability, the height for obtaining silicon crystal surface
Uniform pyramid texture figure is spent, its limit light effect is excellent.When solar cell is manufactured, make the surface of cell piece
Reflectivity is lower compared with like product, finally makes the lifting of solar cell current density, transformation efficiency higher.
Brief description of the drawings
The present invention is further described for embodiment below in conjunction with the accompanying drawings.
Fig. 1 is the scanning electron microscope diagram after silicon crystal corrodes in the aqueous slkali containing auxiliary agent of the present invention.
Fig. 2 is the reflectance curve after silicon crystal corrodes in the aqueous slkali containing auxiliary agent of the present invention.
Specific embodiment
Embodiment 1：
1) first component selects poly glycol monomethyl ether (mass fraction 5%), component B selection dimethylformamide (quality point
Number 10%), the third compositional selecting neopelex (mass fraction 0.1%) and sodium lignin sulfonate (mass fraction
0.5%), balance of deionized water, is well mixed, as a kind of chemical assistant for the corrosion of silicon crystal surface-texturing.Should
The usage of auxiliary agent is illustrated in following steps：
2) configuration concentration be 2% NaOH solution as the textured corrosive liquid of silicon wafer, be heated to 80 degrees Celsius；
3) it is 1% above-mentioned auxiliary agent to addition mass fraction in corrosive liquid, and is well mixed；
4) silicon wafer carries out surface clean first with the mixed solution of NaOH and hydrogen peroxide, with the addition of above-mentioned auxiliary agent afterwards
Corrosive liquid in reacted, 20 minutes reaction time；
5) clean and dry through continuous later after reaction terminates, you can obtain excellent textured surfaces.
As shown in Figure 1, the pyramid covering in gained texturing figure is uniform, and Size Distribution is more consistent, and size is about
3-5 microns.Accompanying drawing 2 show the reflectance curve of gained textured surfaces, the average reflectance of 400-1050nm wave-length coverages
Less than 11%, anti-reflective effect is excellent.
Embodiment 2：
1) first component selects polyethylene glycol monobutyl ether (mass fraction 5%), component B selection 1-METHYLPYRROLIDONE (quality
Fraction 12%) and diethylene glycol (DEG) (mass fraction 8%), the third compositional selecting NPE (mass fraction 0.1%), fourth
Component be dilute solution of sodium hydroxide (mass fraction 2%), be well mixed, it is as a kind of for silicon crystal surface-texturing corrosion
Chemical assistant.In the usage similar embodiment 1 of the auxiliary agent described in step 2-5.
Embodiment 3：
2) first component selects polyethylene glycol (mass fraction 2%), poly glycol monomethyl ether (mass fraction 1%) and poly- second two
The mixture of alcohol list octyl ether (mass fraction 1%), component B selects diethylene glycol monobutyl ether (mass fraction 5%) and nitro first
Alkane (mass fraction 5%), the third compositional selecting polyoxyethylene 20 sorbitan monolaurate (mass fraction 0.1%) is balance of
Deionized water, is well mixed and is a kind of chemical assistant for the corrosion of silicon crystal surface-texturing.The usage of the auxiliary agent is similar to
In embodiment 1 described in step 2-5.
Above-described embodiment is the preferred embodiment of the present invention, in order that more clearly illustrating technical scheme,
Protection scope of the present invention is not restricted with this.
Claims (4)
1. it is a kind of for silicon crystal surface-texturing corrosion chemical assistant, it is characterised in that its component include first component, quality
Percentage 0.01-40%；Component B, mass percent 0.01-50%；Third component, mass percent 0.01-50%；Fourth component
It is the water of surplus；
Described first component includes the mixture of one or more in polyethylene glycol and polyalkylene glycol monoalkyl ether；
Described component B includes dimethylformamide, aniline, nitromethane, pyridine, 1-METHYLPYRROLIDONE, polyvinyl pyrrole
The mixture of one or more in alkanone, diethylene glycol monobutyl ether, diethylene glycol (DEG).
The third described component includes dodecyl benzene sulfonate, dodecyl phosphonic acid ester salt, APES, polyoxy second
Alkene sorbitan mono-laurate, ethyoxyl are modified the one kind in poly- trisiloxanes, Tea Polyphenols, tannic acid and lignosulfonates
Or several mixtures.
2. the chemical assistant that silicon crystal surface-texturing according to claim 1 corrodes, it is characterised in that in first component
The ethylene glycol monomers degree of polymerization in polyethylene glycol and polyalkylene glycol monoalkyl ether is 2-20, the alkyl in polyalkylene glycol monoalkyl ether
Group is as the increase of carbon number is from methyl to octyl group.
3. the chemical assistant that silicon crystal surface-texturing according to claim 1 corrodes, it is characterised in that in the third component
APES selects octyl phenol or nonyl phenol, and the ethylene glycol monomers degree of polymerization is 8-12.
4. the chemical assistant that silicon crystal surface-texturing according to claim 1 corrodes, it is characterised in that in fourth component
Water be pure water；Preferably, adding the alkali such as NaOH, potassium hydroxide in fourth component, the mass ratio for accounting for water is 0.1-
5%, regulation system is alkalescence；Preferably, adding the acid such as hydrochloric acid, acetic acid in fourth component, the mass ratio for accounting for water is 0.1-
5%, regulation system is acidity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710018417.4A CN106676636A (en) | 2017-01-10 | 2017-01-10 | Chemical additive for texture etching of silicon crystal surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710018417.4A CN106676636A (en) | 2017-01-10 | 2017-01-10 | Chemical additive for texture etching of silicon crystal surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106676636A true CN106676636A (en) | 2017-05-17 |
Family
ID=58849418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710018417.4A Pending CN106676636A (en) | 2017-01-10 | 2017-01-10 | Chemical additive for texture etching of silicon crystal surface |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106676636A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108103584A (en) * | 2017-11-13 | 2018-06-01 | 德清丽晶能源科技有限公司 | A kind of acid flocking additive and its application method that silicon chip surface processing is cut for polycrystalline diamond line |
| CN108193280A (en) * | 2017-12-11 | 2018-06-22 | 杭州飞鹿新能源科技有限公司 | The additive of diamond wire polycrystalline silicon wafer acidity texture preparation liquid and its application |
| CN109554762A (en) * | 2018-12-18 | 2019-04-02 | 武汉风帆电化科技股份有限公司 | A kind of polysilicon etch solution additive and its application |
| CN111876831A (en) * | 2020-06-30 | 2020-11-03 | 杭州聚力氢能科技有限公司 | Texturing additive capable of regulating and controlling hydrophilicity and hydrophobicity of silicon wafer and texturing method |
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| CN113416547A (en) * | 2021-06-18 | 2021-09-21 | 常州时创能源股份有限公司 | Alkali corrosion auxiliary agent for cleaning winding-plated polycrystalline silicon and application thereof |
| WO2022262340A1 (en) * | 2021-06-18 | 2022-12-22 | 常州时创能源股份有限公司 | Alkali corrosion adjuvant for cleaning winding-plated polysilicon and application thereof |
| CN113502163A (en) * | 2021-09-10 | 2021-10-15 | 杭州晶宝新能源科技有限公司 | Chemical auxiliary agent for forming solar cell back structure, and preparation method and application thereof |
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