CN104651949A - Multi-crystalline silicon wafer texturization additive - Google Patents
Multi-crystalline silicon wafer texturization additive Download PDFInfo
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- CN104651949A CN104651949A CN201510072360.7A CN201510072360A CN104651949A CN 104651949 A CN104651949 A CN 104651949A CN 201510072360 A CN201510072360 A CN 201510072360A CN 104651949 A CN104651949 A CN 104651949A
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- wool
- making herbs
- additive
- polycrystalline silicon
- silicon texturing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a multi-crystalline silicon wafer texturization additive, which comprises the following components in percentage by mass: 0.08-0.8% of sodium citrate, 1.0-2.5% of citric acid, 0.03-0.07% of non-ionic surfactant, 0.08-0.8% of polyethylene glycol, 0.1-1% of polyvinylpyrrolidone and the balance of water. After being texturized through using the prepared multi-crystalline silicon wafer texturization additive, the multi-crystalline silicon wafer has an even surface, the reflective rate is reduced by 3-5%, and a battery conversion rate is promoted by 0.1-0.2%.
Description
Technical field
The present invention relates to polycrystalline silicon texturing technical field, particularly relate to a kind of polycrystalline silicon texturing additive.
Background technology
Polysilicon solar cell accounts for about 50% of global PV product population at present, and the market share amount shared by it also will continue to increase steadily, but the general battery conversion efficiency of polysilicon chip is in the market lower than monocrystalline silicon piece battery, one of them major cause is to lack a kind of inexpensive efficient polysilicon making herbs into wool mode, good polysilicon making herbs into wool can improve the specific absorption of sunlight greatly, reduce reflection, improve short-circuit current, realize the high conversion efficiency of cell photoelectric.
Monocrystaline silicon solar cell generally carries out making herbs into wool by each diversity of alkali lye (KOH or NaOH) and obtains random pyramid structure, and the crystalline phase randomness of polysilicon chip makes this technology be difficult to reach same effect on this material.The acid etching of current isotropy is that in polycrystalline etching method, implementation is best, and one that cost is minimum is also a kind of the most widely used method.But the matte that this sour making herbs into wool obtains falls into photosensitiveness difference, and reflectivity is higher, about about 25%, increase pit depth and can bring difficulty to follow-up operation again.And in sour Woolen-making liquid, add suitable additive, greatly can improve making herbs into wool effect, reduce reflectivity (D.H.Macdonald, A.Cuevas, M.J.Kerr, et al, Solar Energy, 2004,76,277-283; Y.T.Cheng, J.J.Ho, S.Y.Tsai, et al, Solar Energy, 2011,85,87-94), will have great importance.
Summary of the invention
The present invention, in order to overcome the deficiency of above-mentioned technical problem, provides a kind of polycrystalline silicon texturing additive, and this polycrystalline silicon texturing additive application makes in the matte of polysilicon chip.The use of this making herbs into wool additive brings splendid surface wettability, and make the bubble that produces in making herbs into wool process many and little, successfully in polycrystalline making herbs into wool corrosion pit, form a large amount of microstructures, improve the sunken photosensitiveness on surface further, reduce reflectivity, improve cell photoelectric efficiency of conversion.
The technical scheme solved the problems of the technologies described above is as follows:
A kind of polycrystalline silicon texturing additive, according to mass percent, comprises following component:
Further, described nonionogenic tenside is fluorine carbon tensio-active agent, polysiloxane-based tensio-active agent.Preferred fluorine carbon tensio-active agent is nonionogenic tenside.
Further, described molecular weight polyethylene glycol is 200 ~ 1000, preferably 600 and 1000.
Described water is deionized water.
A kind of Woolen-making liquid for polycrystalline silicon texturing, comprise polycrystalline silicon texturing additive and making herbs into wool acid solution, the mass ratio of polycrystalline silicon texturing additive and making herbs into wool acid solution is 0.2 ~ 0.7:100, and making herbs into wool acid solution is the mixed aqueous solution of hydrofluoric acid and nitric acid or the mixed aqueous solution of hydrofluoric acid and chromic acid.
A method for polycrystalline silicon texturing, is characterized in that, utilizes Woolen-making liquid to carry out surface wool manufacturing to polysilicon chip.
A kind of polycrystalline silicon texturing method, is characterized in that, comprise the following steps:
1) preparation of polycrystalline silicon texturing additive: the Trisodium Citrate of 0.08 ~ 0.8%, the citric acid of 1.0 ~ 2.5%, nonionogenic tenside, the polyoxyethylene glycol of 0.08 ~ 0.8%, the polyvinylpyrrolidone of 0.1 ~ 1% of 0.03 ~ 0.07% are joined in the water of surplus, mixes to and evenly namely obtain making herbs into wool additive; This making herbs into wool additive is joined making herbs into wool acid solution, and its mass ratio is 0.2 ~ 0.7:100;
2) polysilicon chip surface wool manufacturing: be immersed in by polysilicon chip in the making herbs into wool acid solution containing making herbs into wool additive and carry out making herbs into wool, temperature controls at 8 ~ 20 DEG C, and the making herbs into wool time is 120 ~ 240s.
Adding of polysilicon making herbs into wool additive can make to produce more microbubble in making herbs into wool process, little by infection by the position of bubble absorption at silicon chip surface, bubble-free position is large by infection, and the existence of micro-bubble achieves even fine and closely woven concavo-convex making herbs into wool effect.
The invention provides a kind of polysilicon making herbs into wool additive efficiently, it contains the tensio-active agent of specific function, it add the wettability can improving Woolen-making liquid and silicon chip surface, in polycrystalline making herbs into wool corrosion pit, form a large amount of microstructures, thus promote the sunken photosensitiveness on surface further, it can also improve sour making herbs into wool environment simultaneously, reach control speed of reaction, reduce the effect of reflectivity, make reaction more even, male and fomale(M&F) is finer and closely woven.And Controlling Technology condition greatly, reduce technique to the requirement of temperature, make technique more stable, efficiency is improved greatly.
After polycrystalline silicon texturing additive prepared by the application of the invention carries out sour making herbs into wool to polysilicon chip, the silicon chip surface obtained is even, reflectance reduction 3 ~ 5%, and cell conversion rate promotes 0.1 ~ 0.2%.
Embodiment
Below in conjunction with embodiment, the present invention is further detailed explanation.
Embodiment 1:
The polyoxyethylene glycol of the fluorocarbon surfactant of the citric acid of the Trisodium Citrate of 0.5g, 2g, 0.05g, 0.4g, the polyvinylpyrrolidone of 0.6g are joined in the water of surplus, mixes to and evenly namely obtain making herbs into wool additive.This making herbs into wool additive of 100g is joined in 19kg acid Woolen-making liquid, mixing and stirring.
Immersed by polysilicon chip in the above-mentioned sour Woolen-making liquid containing making herbs into wool additive and carry out making herbs into wool, temperature controls at 10 DEG C, and the making herbs into wool time is 200s.
Embodiment 2:
The polyoxyethylene glycol of the fluorocarbon surfactant of the citric acid of the Trisodium Citrate of 0.7g, 2.3g, 0.06g, 0.6g, the polyvinylpyrrolidone of 0.5g are joined the water of surplus, mix to and evenly namely obtain making herbs into wool additive.This making herbs into wool additive of 100g is joined in 22kg acid Woolen-making liquid, mixing and stirring.
Immersed by polysilicon chip in the above-mentioned sour Woolen-making liquid containing making herbs into wool additive and carry out making herbs into wool, temperature controls at 15 DEG C, and the making herbs into wool time is 140s.
Embodiment 3:
The polyoxyethylene glycol of the fluorocarbon surfactant of the citric acid of the Trisodium Citrate of 0.8g, 2g, 0.05g, 0.6g, the polyvinylpyrrolidone of 0.8g are joined the water of surplus, mix to and evenly namely obtain making herbs into wool additive.This making herbs into wool additive of 100g is joined in 15kg acid Woolen-making liquid, mixing and stirring.
Polysilicon chip being immersed above-mentioned having added in the sour Woolen-making liquid of making herbs into wool additive carries out making herbs into wool, and temperature controls at 9 DEG C, and the making herbs into wool time is 160s.
Embodiment 4:
The polyoxyethylene glycol of the fluorocarbon surfactant of the citric acid of the Trisodium Citrate of 0.08g, 1g, 0.03g, 0.08g, the polyvinylpyrrolidone of 0.1g are joined the water of surplus, mix to and evenly namely obtain making herbs into wool additive.This making herbs into wool additive of 100g is joined in 15kg acid Woolen-making liquid, mixing and stirring.
Polysilicon chip being immersed above-mentioned having added in the sour Woolen-making liquid of making herbs into wool additive carries out making herbs into wool, and temperature controls at 8 DEG C, and the making herbs into wool time is 240s.
Result: by the making herbs into wool using this making herbs into wool additive to carry out polysilicon chip, etching extent about 0.35 ~ 0.45, reflectance reduction 3 ~ 5%, current boost 50 ~ 80mA, cell conversion rate promotes 0.1 ~ 0.2%.
The above is only preferred embodiment of the present invention, not does any pro forma restriction to the present invention, every according in technical spirit of the present invention to any simple modification, equivalent variations that above embodiment is done, all fall within protection scope of the present invention.
Claims (8)
1. a polycrystalline silicon texturing additive, is characterized in that, according to mass percent, comprises following component:
2. a kind of polycrystalline silicon texturing additive according to claim 1, is characterized in that, described nonionogenic tenside is fluorine carbon tensio-active agent, polysiloxane-based tensio-active agent.
3. a kind of polycrystalline silicon texturing additive according to claim 1, is characterized in that, described molecular weight polyethylene glycol is 200 ~ 1000.
4. a kind of polycrystalline silicon texturing additive according to claim 1, is characterized in that, described water is deionized water.
5. the Woolen-making liquid for polycrystalline silicon texturing, it is characterized in that, comprise as the polycrystalline silicon texturing additive in Claims 1 to 4 as described in any one and making herbs into wool acid solution, described polycrystalline silicon texturing additive and the mass ratio of making herbs into wool acid solution are 0.2 ~ 0.7:100, and described making herbs into wool acid solution is the mixed aqueous solution of hydrofluoric acid and nitric acid or the mixed aqueous solution of hydrofluoric acid and chromic acid.
6. a method for polycrystalline silicon texturing, is characterized in that, utilizes the Woolen-making liquid described in claim 5 to carry out surface wool manufacturing to polysilicon chip.
7. the method for polycrystalline silicon texturing according to claim 6, is characterized in that, making herbs into wool temperature is 8 ~ 20 DEG C, and the making herbs into wool time is 120 ~ 240s.
8. polycrystalline silicon texturing method according to claim 6, is characterized in that, comprises the following steps:
1) preparation of polycrystalline silicon texturing additive: the Trisodium Citrate of 0.08 ~ 0.8%, the citric acid of 1.0 ~ 2.5%, nonionogenic tenside, the polyoxyethylene glycol of 0.08 ~ 0.8%, the polyvinylpyrrolidone of 0.1 ~ 1% of 0.03 ~ 0.07% are joined in the water of surplus, mixes to and evenly namely obtain making herbs into wool additive; This making herbs into wool additive is joined making herbs into wool acid solution, and its mass ratio is 0.2 ~ 0.7:100;
2) polysilicon chip surface wool manufacturing: be immersed in by polysilicon chip in the making herbs into wool acid solution containing making herbs into wool additive and carry out making herbs into wool, temperature controls at 8 ~ 20 DEG C, and the making herbs into wool time is 120 ~ 240s.
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| CN106119976A (en) * | 2016-08-19 | 2016-11-16 | 常州时创能源科技有限公司 | The additive of polycrystalline black silicon making herbs into wool reaming acid solution and application thereof |
| CN106222755A (en) * | 2016-09-30 | 2016-12-14 | 杭州飞鹿新能源科技有限公司 | Additive and application process thereof for polycrystalline silicon texturing |
| CN106521636A (en) * | 2016-12-30 | 2017-03-22 | 德清丽晶能源科技有限公司 | Single crystal wafer texturing additive |
| CN106676636A (en) * | 2017-01-10 | 2017-05-17 | 何秀英 | Chemical additive for texture etching of silicon crystal surface |
| CN106835288A (en) * | 2016-12-30 | 2017-06-13 | 德清丽晶能源科技有限公司 | A kind of etching method of monocrystalline silicon piece |
| CN107170845A (en) * | 2017-05-12 | 2017-09-15 | 中国科学院宁波材料技术与工程研究所 | A kind of wet method prepares the pyramidal method of corners |
| CN109103297A (en) * | 2018-08-17 | 2018-12-28 | 安徽英发三友新能源科技有限公司 | A kind of monocrystalline solar cells piece process for etching |
| CN110644053A (en) * | 2019-10-12 | 2020-01-03 | 湖南理工学院 | Formula and using method for preparing corn-shaped monocrystalline silicon suede composite texturing additive |
| CN110644049A (en) * | 2018-06-26 | 2020-01-03 | 上海硅洋新能源科技有限公司 | Diamond wire polycrystalline silicon wafer texturing additive and diamond wire polycrystalline silicon wafer texturing etching liquid |
| CN115745419A (en) * | 2022-11-25 | 2023-03-07 | 常州君合科技股份有限公司 | Method for synthesizing high-performance photovoltaic glass antireflection film by segmented hydrolysis of tetraethoxysilane |
| CN115820256A (en) * | 2022-11-25 | 2023-03-21 | 嘉兴市小辰光伏科技有限公司 | Additive for improving uniformity of texture of solar cell and application process thereof |
| CN116004232A (en) * | 2022-11-25 | 2023-04-25 | 常州君合科技股份有限公司 | Monocrystalline silicon polishing alkali etching additive and application thereof |
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| CN110644049A (en) * | 2018-06-26 | 2020-01-03 | 上海硅洋新能源科技有限公司 | Diamond wire polycrystalline silicon wafer texturing additive and diamond wire polycrystalline silicon wafer texturing etching liquid |
| CN109103297A (en) * | 2018-08-17 | 2018-12-28 | 安徽英发三友新能源科技有限公司 | A kind of monocrystalline solar cells piece process for etching |
| CN110644053A (en) * | 2019-10-12 | 2020-01-03 | 湖南理工学院 | Formula and using method for preparing corn-shaped monocrystalline silicon suede composite texturing additive |
| CN115745419A (en) * | 2022-11-25 | 2023-03-07 | 常州君合科技股份有限公司 | Method for synthesizing high-performance photovoltaic glass antireflection film by segmented hydrolysis of tetraethoxysilane |
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| CN116004232A (en) * | 2022-11-25 | 2023-04-25 | 常州君合科技股份有限公司 | Monocrystalline silicon polishing alkali etching additive and application thereof |
| CN115745419B (en) * | 2022-11-25 | 2024-04-12 | 常州君合科技股份有限公司 | Method for synthesizing high-performance photovoltaic glass antireflection film by sectionally hydrolyzing tetraethoxysilane |
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