CN106835288A - A kind of etching method of monocrystalline silicon piece - Google Patents
A kind of etching method of monocrystalline silicon piece Download PDFInfo
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- CN106835288A CN106835288A CN201611255446.4A CN201611255446A CN106835288A CN 106835288 A CN106835288 A CN 106835288A CN 201611255446 A CN201611255446 A CN 201611255446A CN 106835288 A CN106835288 A CN 106835288A
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- CN
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- Prior art keywords
- wool
- monocrystalline silicon
- making herbs
- silicon piece
- making
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000005530 etching Methods 0.000 title claims abstract description 14
- 210000002268 wool Anatomy 0.000 claims abstract description 34
- 235000008216 herbs Nutrition 0.000 claims abstract description 33
- 239000000654 additive Substances 0.000 claims abstract description 17
- 230000000996 additive effect Effects 0.000 claims abstract description 17
- 239000007788 liquid Substances 0.000 claims abstract description 17
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 33
- -1 acrylic acid-maleic acid acid anhydride Chemical class 0.000 claims description 17
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 8
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 8
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- WXMKPNITSTVMEF-UHFFFAOYSA-M sodium benzoate Chemical compound [Na+].[O-]C(=O)C1=CC=CC=C1 WXMKPNITSTVMEF-UHFFFAOYSA-M 0.000 claims description 7
- 235000010234 sodium benzoate Nutrition 0.000 claims description 7
- 229920001577 copolymer Polymers 0.000 claims description 6
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 6
- 239000004094 surface-active agent Substances 0.000 claims description 6
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 239000004299 sodium benzoate Substances 0.000 claims description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- 239000011591 potassium Substances 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- IZPNTDOWOBGHEG-UHFFFAOYSA-M sodium benzene formate Chemical compound [Na+].[O-]C=O.C1=CC=CC=C1 IZPNTDOWOBGHEG-UHFFFAOYSA-M 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 6
- 238000009826 distribution Methods 0.000 abstract description 5
- 230000009466 transformation Effects 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical class CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- 239000003513 alkali Substances 0.000 description 9
- 239000003643 water by type Substances 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- JBJWASZNUJCEKT-UHFFFAOYSA-M sodium;hydroxide;hydrate Chemical compound O.[OH-].[Na+] JBJWASZNUJCEKT-UHFFFAOYSA-M 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 229940043237 diethanolamine Drugs 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- QGTQTQBVAMFOGO-UHFFFAOYSA-N 1,1,2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-heptadecafluorooctane-1-sulfonic acid;potassium Chemical compound [K].OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F QGTQTQBVAMFOGO-UHFFFAOYSA-N 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N 1-nonene Chemical group CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- QQLILYBIARWEIF-UHFFFAOYSA-N 2-(2-hydroxyethylsulfonyl)ethanol Chemical compound OCCS(=O)(=O)CCO QQLILYBIARWEIF-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- LFRJGOFQPHQKKA-UHFFFAOYSA-N [Na].OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F Chemical compound [Na].OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F LFRJGOFQPHQKKA-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 150000002118 epoxides Chemical class 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 231100000956 nontoxicity Toxicity 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- LWHQXUODFPPQTL-UHFFFAOYSA-M sodium;2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-pentadecafluorooctanoate Chemical compound [Na+].[O-]C(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F LWHQXUODFPPQTL-UHFFFAOYSA-M 0.000 description 1
- KVCGISUBCHHTDD-UHFFFAOYSA-M sodium;4-methylbenzenesulfonate Chemical compound [Na+].CC1=CC=C(S([O-])(=O)=O)C=C1 KVCGISUBCHHTDD-UHFFFAOYSA-M 0.000 description 1
- MZSDGDXXBZSFTG-UHFFFAOYSA-M sodium;benzenesulfonate Chemical compound [Na+].[O-]S(=O)(=O)C1=CC=CC=C1 MZSDGDXXBZSFTG-UHFFFAOYSA-M 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention belongs to monocrystalline silicon piece apparatus technical field, more particularly to a kind of etching method of monocrystalline silicon piece.The invention discloses a kind of etching method of monocrystalline silicon piece, by following steps：1) configuration of flocking additive；2) configuration of Woolen-making liquid.3) monocrystalline silicon piece is inserted into step 2) obtained in making herbs into wool is carried out in Woolen-making liquid, making herbs into wool temperature is 80~88 DEG C, and the making herbs into wool time is 600~1200s.The beneficial effects of the invention are as follows：Making herbs into wool excellent effect, the pyramidal size of matte is smaller after making herbs into wool, narrow distribution, can reduce the reflection to light, thus can improve the photoelectric transformation efficiency of the solar battery sheet that assembling is obtained.
Description
Technical field
The invention belongs to monocrystalline silicon piece apparatus technical field, more particularly to a kind of etching method of monocrystalline silicon piece.
Background technology
In the preparation process of solar battery sheet, reflection of the silicon chip to light is reduced as far as, improves silicon chip to light
Absorb, will effectively lift conversion efficiency of solar cell.It is conventional increase crystal that wherein silicon chip surface carries out texturing treatment
Approach of the silicon to the absorption of light.Often a large amount of isopropanols or ethanol are added in alkaline Woolen-making liquid in industrial production to improve making herbs into wool effect
Really.As Chinese invention patent CN201010195103.X and CN201010195095.9 report two kinds of fine-hair maring using monocrystalline silicon slices respectively
Additive and its application method.It is to be noted that isopropanol and ethanol belong to low boiling alcohols, making herbs into wool process temperature compared with
Height is, it is necessary to often add, operation is inconvenient and increases production cost；Meanwhile, a large amount of uses of isopropanol and ethanol can cause system
COD (COD) severe overweight of suede raffinate, brings environmental pollution.As can be seen here, got rid of during fine-hair maring using monocrystalline silicon slice
Isopropanol or ethanol are abandoned, facility is both operated, again can reduces cost, reduction pollution.Making herbs into wool effect is mainly big by pyramidal size
The influence of small and distributed degrees.And the pyramidal size that common process is prepared is about 6~10 μm, and wider distribution.
The content of the invention
It is an object of the invention to solve the problems, such as techniques discussed above, there is provided a kind of making herbs into wool excellent effect, suede after making herbs into wool
The pyramidal size in face is smaller, narrow distribution, can reduce the reflection to light, thus can improve the solar battery sheet that assembling is obtained
Photoelectric transformation efficiency monocrystalline silicon piece etching method, its technical scheme is as follows：
A kind of etching method of monocrystalline silicon piece, it is characterised in that by following steps：
1) configuration of flocking additive：Successively by fluorocarbon surfactant, polyvinylpyrrolidone, acrylic acid-maleic acid
Anhydride copolymer, propylene glycol monomethyl ether, Sodium Benzoate, paratoluenesulfonic acid sodium salt is dissolved into water, is well mixed；
2) configuration of Woolen-making liquid：By step 1) obtained in flocking additive be added in aqueous slkali, be well mixed；Described system
Suede additive is 0.1~3 with the mass ratio of aqueous slkali:100, described aqueous slkali is NaOH or hydrogen that concentration is 1~3%
Oxidation aqueous solutions of potassium.
3) monocrystalline silicon piece is inserted into step 2) obtained in making herbs into wool is carried out in Woolen-making liquid, making herbs into wool temperature is 80~88 DEG C, making herbs into wool
Time is 600~1200s.
Preferred embodiment is, described fluorocarbon surfactant 0.01-1%, polyvinylpyrrolidone 1-5%, acrylic acid-horse
Come acid anhydride copolymer 0.1-3%, propylene glycol monomethyl ether 1-5%, Sodium Benzoate 0.05-0.5%, paratoluenesulfonic acid sodium salt 0.1-2% is remaining
It is water to measure, and above-mentioned percentage is mass percent.
Described fluorocarbon surfactant is perfluorinated nonene epoxide benzene sulfonic acid sodium salt, perfluoro octyl sulfonic acid potassium, perfluoro capryl sulphur
One or more in acyl diethanol amine, perfluorinated octyl sulfuryl amine, Sodium perfluorooctanoate.
Preferred embodiment is that described water is deionized water, deionized water electrical conductivity<1μs/cm.
The surface tension of final making herbs into wool alkali lye can be reduced to below 30mN/m by present invention addition fluorocarbon surfactant,
Extremely superior making herbs into wool effect can be obtained.
The present invention to monocrystalline silicon piece during surface wool manufacturing is carried out, and the active principle boiling point in flocking additive is high, difficult
Volatilization, without adding, convenient operation reduces cost.Meanwhile, the flocking additive nontoxicity of this patent, non-corrosiveness, to human body
With environment non-hazardous, compared with the Woolen-making liquid of traditional use isopropanol or ethanol, organic matter consumption in the Woolen-making liquid of this patent
An order of magnitude is at least reduced, environmental pollution is reduced
The beneficial effects of the invention are as follows：Making herbs into wool excellent effect, the pyramidal size of matte is smaller after making herbs into wool, narrow distribution,
The reflection to light can be reduced, thus the photoelectric transformation efficiency of the solar battery sheet that assembling is obtained can be improved.
Specific embodiment
Embodiment is specifically described below：
Embodiment 1
Processing step is as follows：
1. flocking additive is configured：By 0.05g perfluoro octyl sulfonic acid sodium, 1g PVPs, 0.5g acrylic acid-
Copolymer-maleic anhydride, 5g propylene glycol monomethyl ethers, 0.1g Sodium Benzoates and 0.25g paratoluenesulfonic acid sodium salts are dissolved into 100ml and go successively
In ionized water.
2. alkali lye is configured：10g NaOH is dissolved in 990g deionized waters, the NaOH water that concentration is 1% is obtained
Solution.
3. alkaline Woolen-making liquid is configured：It is with mass ratio by the alkali lye that the flocking additive and step 2 of step 1 gained are obtained
0.5:100 are well mixed.
4. process for etching：Monocrystalline silicon piece used for solar batteries is submerged into alkaline Woolen-making liquid prepared by step 3 carries out surface
Making herbs into wool, making herbs into wool temperature is 85 DEG C, and the making herbs into wool time is 900s.
The pyramid size of formation is smaller, about 0.8~2 μm, and narrow distribution.Additionally, the silicon chip weight for etching away is about
It is 5.5%.
Embodiment 2
Processing step is as follows：
1. flocking additive is configured：By 0.1g Sodium perfluorooctanoates, 5g PVPs, 1g acrylic acid-maleic acids
Anhydride copolymer, 3g propylene glycol monomethyl ethers, 0.2g Sodium Benzoates and 0.5g paratoluenesulfonic acid sodium salts are dissolved into 100ml deionized waters successively
In.
2. alkali lye is configured：15g potassium hydroxide is dissolved in 985g deionized waters, the potassium hydroxide that concentration is 1.5% is obtained
The aqueous solution.
3. alkaline Woolen-making liquid is configured：By the flocking additive and the alkali lye that obtains of step 2 of step 1 gained with mass ratio be 1:
100 are well mixed.
4. process for etching：Monocrystalline silicon piece used for solar batteries is submerged into alkaline Woolen-making liquid prepared by step 3 carries out surface
Making herbs into wool, making herbs into wool temperature is 80 DEG C, and the making herbs into wool time is 1200s.
Embodiment 3
Processing step is as follows：
1. flocking additive is configured：By 0.2g perfluorinated nonene epoxide benzene sulfonic acid sodium salts, 0.3g perfluoro capryl sulphonyl diethanol amine,
1g PVPs, 0.1g acrylic acid-maleic anhydride copolymers, 2g propylene glycol monomethyl ethers, 0.2g Sodium Benzoates and 2g pairs
Toluenesulfonic acid sodium salt is dissolved into 100ml deionized waters successively.
2. alkali lye is configured：20g NaOH is dissolved in 980g deionized waters, the NaOH water that concentration is 2% is obtained
Solution.
3. alkaline Woolen-making liquid is configured：It is with mass ratio by the alkali lye that the flocking additive and step 2 of step 1 gained are obtained
0.1:100 are well mixed.
4. process for etching：Monocrystalline silicon piece used for solar batteries is submerged into alkaline Woolen-making liquid prepared by step 3 carries out surface
Making herbs into wool, making herbs into wool temperature is 88 DEG C, and the making herbs into wool time is 600s.
Embodiment 4
Processing step is as follows：
1. flocking additive is configured：By 0.05g perfluorinated nonene epoxide benzene sulfonic acid sodium salts, 0.2g perfluoro capryl acid amides amine oxides,
5g PVPs, 0.1g acrylic acid-maleic anhydride copolymers, 1g propylene glycol monomethyl ethers, 0.25g Sodium Benzoates and 0.5g
Paratoluenesulfonic acid sodium salt is dissolved into 100ml deionized waters successively.
2. alkali lye is configured：30g NaOH is dissolved in 970g deionized waters, the NaOH water that concentration is 3% is obtained
Solution.
3. alkaline Woolen-making liquid is configured：It is with mass ratio by the alkali lye that the flocking additive and step 2 of step 1 gained are obtained
0.2:100 are well mixed.
4. process for etching：Monocrystalline silicon piece used for solar batteries is submerged into alkaline Woolen-making liquid prepared by step 3 carries out surface
Making herbs into wool, making herbs into wool temperature is 83 DEG C, and the making herbs into wool time is 800s.
Claims (2)
1. a kind of etching method of monocrystalline silicon piece, it is characterised in that by following steps：
1) configuration of flocking additive：Successively by fluorocarbon surfactant, polyvinylpyrrolidone, acrylic acid-maleic acid acid anhydride is total to
Polymers, propylene glycol monomethyl ether, Sodium Benzoate, paratoluenesulfonic acid sodium salt is dissolved into water, is well mixed；
2) configuration of Woolen-making liquid：By step 1) obtained in flocking additive be added in aqueous slkali, be well mixed；Described making herbs into wool adds
Plus agent and the mass ratio of aqueous slkali are 0.1~3:100, described aqueous slkali is NaOH or hydroxide that concentration is 1~3%
Aqueous solutions of potassium.
3) monocrystalline silicon piece is inserted into step 2) obtained in making herbs into wool is carried out in Woolen-making liquid, making herbs into wool temperature is 80~88 DEG C, making herbs into wool time
It is 600~1200s.
2. the etching method of monocrystalline silicon piece as claimed in claim 1, it is characterised in that described fluorocarbon surfactant
0.01-1%, polyvinylpyrrolidone 1-5%, acrylic acid-maleic anhydride copolymer 0.1-3%, propylene glycol monomethyl ether 1-5%, benzene
Sodium formate 0.05-0.5%, paratoluenesulfonic acid sodium salt 0.1-2%, balance of water, above-mentioned percentage is mass percent.
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| CN201611255446.4A CN106835288A (en) | 2016-12-30 | 2016-12-30 | A kind of etching method of monocrystalline silicon piece |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611255446.4A CN106835288A (en) | 2016-12-30 | 2016-12-30 | A kind of etching method of monocrystalline silicon piece |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106835288A true CN106835288A (en) | 2017-06-13 |
Family
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| CN201611255446.4A Pending CN106835288A (en) | 2016-12-30 | 2016-12-30 | A kind of etching method of monocrystalline silicon piece |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107747132A (en) * | 2017-10-27 | 2018-03-02 | 德清丽晶能源科技有限公司 | A kind of etching method of monocrystalline silicon chip of solar cell |
| CN107747133A (en) * | 2017-10-27 | 2018-03-02 | 德清丽晶能源科技有限公司 | A kind of etching method of battery monocrystalline silicon wafer |
| CN107747131A (en) * | 2017-10-27 | 2018-03-02 | 德清丽晶能源科技有限公司 | A kind of fine-hair maring using monocrystalline silicon slice additive |
| CN107955973A (en) * | 2017-10-27 | 2018-04-24 | 德清丽晶能源科技有限公司 | A kind of etching method of battery monocrystalline silicon piece |
| CN107964686A (en) * | 2017-10-27 | 2018-04-27 | 德清丽晶能源科技有限公司 | A kind of Woolen-making liquid for fine-hair maring using monocrystalline silicon slice |
| CN107964685A (en) * | 2017-10-27 | 2018-04-27 | 德清丽晶能源科技有限公司 | A kind of etching method of monocrystalline silicon piece |
| CN107964684A (en) * | 2017-10-27 | 2018-04-27 | 德清丽晶能源科技有限公司 | A kind of etching method of monocrystalline silicon piece used for solar batteries |
| CN108219071A (en) * | 2018-01-19 | 2018-06-29 | 温岭汉德高分子科技有限公司 | A kind of chondroitin sulfate of fine-hair maring using monocrystalline silicon slice-poly-（Vinyl pyrrolidone-vinylpyridine）The preparation method of copolymer |
| CN108221057A (en) * | 2018-01-18 | 2018-06-29 | 西安润威光电科技有限公司 | A kind of graphite oxide alkenyl crystal silicon flocking additive and preparation method and prepare the method for silicon solar battery pile face using it |
| CN108251894A (en) * | 2018-01-19 | 2018-07-06 | 温岭汉德高分子科技有限公司 | A kind of etching method of monocrystalline silicon piece |
| CN112813502A (en) * | 2020-12-30 | 2021-05-18 | 常州高特新材料股份有限公司 | Monocrystalline silicon etching texturing additive and application thereof |
| CN113322008A (en) * | 2021-05-10 | 2021-08-31 | 南京卓胜自动化设备有限公司 | Single crystal alkali polishing additive, polishing solution and polishing method |
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