CN107747131A - A kind of fine-hair maring using monocrystalline silicon slice additive - Google Patents
A kind of fine-hair maring using monocrystalline silicon slice additive Download PDFInfo
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- CN107747131A CN107747131A CN201711023941.7A CN201711023941A CN107747131A CN 107747131 A CN107747131 A CN 107747131A CN 201711023941 A CN201711023941 A CN 201711023941A CN 107747131 A CN107747131 A CN 107747131A
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- China
- Prior art keywords
- monocrystalline silicon
- additive
- fine
- silicon slice
- copolymer
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- 239000000654 additive Substances 0.000 title claims abstract description 30
- 230000000996 additive effect Effects 0.000 title claims abstract description 30
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 24
- 229920001577 copolymer Polymers 0.000 claims abstract description 14
- -1 paratoluenesulfonic acid sodium salt Chemical class 0.000 claims abstract description 9
- WXMKPNITSTVMEF-UHFFFAOYSA-M sodium benzoate Chemical compound [Na+].[O-]C(=O)C1=CC=CC=C1 WXMKPNITSTVMEF-UHFFFAOYSA-M 0.000 claims abstract description 7
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims abstract description 6
- 235000010234 sodium benzoate Nutrition 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000004299 sodium benzoate Substances 0.000 claims abstract description 5
- 229920001223 polyethylene glycol Polymers 0.000 claims abstract description 4
- 239000002202 Polyethylene glycol Substances 0.000 claims abstract 2
- 229920002554 vinyl polymer Polymers 0.000 claims description 6
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 5
- 229920000463 Poly(ethylene glycol)-block-poly(propylene glycol)-block-poly(ethylene glycol) Polymers 0.000 claims description 4
- OSSNTDFYBPYIEC-UHFFFAOYSA-N 1-ethenylimidazole Chemical compound C=CN1C=CN=C1 OSSNTDFYBPYIEC-UHFFFAOYSA-N 0.000 claims 1
- MRZRUDQSTIEYBV-UHFFFAOYSA-N 2-ethenyl-1h-imidazole;pyrrolidin-2-one Chemical compound O=C1CCCN1.C=CC1=NC=CN1 MRZRUDQSTIEYBV-UHFFFAOYSA-N 0.000 claims 1
- KGIGUEBEKRSTEW-UHFFFAOYSA-N 2-vinylpyridine Chemical compound C=CC1=CC=CC=N1 KGIGUEBEKRSTEW-UHFFFAOYSA-N 0.000 claims 1
- 150000001412 amines Chemical class 0.000 claims 1
- 210000002268 wool Anatomy 0.000 abstract description 25
- 235000008216 herbs Nutrition 0.000 abstract description 24
- 239000003513 alkali Substances 0.000 abstract description 14
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 abstract description 4
- 229960001484 edetic acid Drugs 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 4
- DBBAUITUQRZERI-UHFFFAOYSA-N 2-ethenyl-1h-imidazole;1-ethenylpyrrolidin-2-one Chemical compound C=CC1=NC=CN1.C=CN1CCCC1=O DBBAUITUQRZERI-UHFFFAOYSA-N 0.000 abstract description 2
- 229920001451 polypropylene glycol Polymers 0.000 abstract 1
- HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Substances [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 16
- 235000011121 sodium hydroxide Nutrition 0.000 description 16
- 238000000034 method Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 239000007788 liquid Substances 0.000 description 8
- 239000003643 water by type Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- FRTNIYVUDIHXPG-UHFFFAOYSA-N acetic acid;ethane-1,2-diamine Chemical class CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.NCCN FRTNIYVUDIHXPG-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- MZSDGDXXBZSFTG-UHFFFAOYSA-M sodium;benzenesulfonate Chemical compound [Na+].[O-]S(=O)(=O)C1=CC=CC=C1 MZSDGDXXBZSFTG-UHFFFAOYSA-M 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention provides a kind of fine-hair maring using monocrystalline silicon slice additive, the additive is added in alkali lye according to a certain percentage, you can realize quick making herbs into wool effect, the making herbs into wool time is 300s 420s.The fine-hair maring using monocrystalline silicon slice additive, is made up of following parts by weight of component：The copolymer 0.05 3% of vinyl pyrrolidone vinyl imidazole, polyethylene glycol polypropylene glycol ethylene glycol copolymer 0.05 3%, ethylenediamine tetra-acetic acid 0.05 1%, MEA 0.1 5%, the water of sodium benzoate 0.05 0.5%, paratoluenesulfonic acid sodium salt 0.1 2% and surplus.
Description
Technical field
The present invention relates to solar cell technology neck, more particularly to a kind of fine-hair maring using monocrystalline silicon slice additive.
Background technology
Alkali lye is very fast to [100] etched-facet of monocrystalline silicon piece, and the etching to [111] crystal face is slower.Produce therefrom
Etching rate difference the monocrystalline silicon sheet surface during being etched using alkali lye to silicon chip will be caused to form pyramid
Structure.The structure can effectively reduce reflection of the silicon chip to light.In the preparation process of solar battery sheet, reflection of the silicon chip to light
Lower, absorption of the silicon chip to light is more, and conversion efficiency of solar cell is also higher.The method etched by above-mentioned alkali lye is to monocrystalline
Silicon chip surface progress texturing processing is conventional increase crystalline silicon to one of effective way of absorption of light.Existing monocrystalline silicon
Process for etching usually requires the 600 s-900 s making herbs into wool time, less efficient, if can shorten the making herbs into wool time, can effectively carry
High efficiency.The flocking additive of this patent can greatly shorten the making herbs into wool time, and after making herbs into wool monocrystalline silicon surface pyramid
Size and distribution approached with common process.
The content of the invention
The present invention provides a kind of fine-hair maring using monocrystalline silicon slice additive, should be when carrying out making herbs into wool to monocrystalline silicon piece, by this patent
Additive is added in alkali lye according to a certain percentage, you can realizes quick making herbs into wool effect, the making herbs into wool time is 300s-420s.The list
Crystal silicon chip flocking additive, it is characterised in that：The additive is made up of following parts by weight of component：Vinyl pyrrolidone-ethene
The copolymer 0.05-3% of base imidazoles, PEO-PPO-PEO 0.05-3%, ethylenediamine tetra-acetic acid
0.05-1%, MEA 0.1-5%, sodium benzoate 0.05-0.5%, paratoluenesulfonic acid sodium salt 0.1-2% and surplus water.
In a preferable technical scheme of the invention, the copolymer of described vinyl pyrrolidone-vinyl imidazole
Number-average molecular weight be about 1,000-10,000.
In presently preferred technical scheme, described PEO-PPO-PEO
Number-average molecular weight be about 5,00-10,000.
In presently preferred technical scheme, the pH of described flocking additive is 8-14.
Compared with prior art, the invention has the advantages that：
Fine-hair maring using monocrystalline silicon slice additive provided by the invention can quickly carry out surface wool manufacturing, system after being mixed with alkali lye to monocrystalline silicon piece
The suede time, more conventional technique shortened more than 50%；And flocking additive need not be added during making herbs into wool, improving making herbs into wool efficiency
Reduce cost simultaneously.Meanwhile the flocking additive of this patent is non-toxic, non-corrosiveness, to human body and environment non-hazardous.
It is also an advantage of the present invention that：The pyramidal size of matte obtained after quick making herbs into wool is smaller, narrow distribution, to light
Reflectivity it is low, the photoelectric transformation efficiency of assembled obtained solar battery sheet is high.The additive cost is relatively low, efficiency compared with
Height, significant effect, there is splendid practical value.
Brief description of the drawings
Fig. 1 is the pyramid 1 for the monocrystalline silicon surface that etching method provided by the invention obtains；
Fig. 2 is the pyramid 2 for the monocrystalline silicon surface that etching method provided by the invention obtains.
Embodiment
Embodiment 1
Processing step is as follows：
1. configure flocking additive：By the copolymer of 0.5 g vinyl pyrrolidones-vinyl imidazole（Number-average molecular weight is）,
1 g PEO-PPO-PEOs, 0.5 g ethylenediamine tetra-acetic acids, 2 g MEAs, 0.1 g benzoic acid
Sodium and 0.25 g paratoluenesulfonic acid sodium salts are dissolved into 100 ml deionized waters successively.
2. configure alkali lye：10 g sodium hydroxides are dissolved in 990 g deionized waters, obtain the hydrogen-oxygen that mass fraction is 1%
Change sodium water solution.
3. the alkaline Woolen-making liquid of configuration：By the alkali lye that the flocking additive obtained by step 1 and step 2 obtain using mass ratio as
0.5:100 is well mixed.
4. process for etching：Monocrystalline silicon piece used for solar batteries is submerged into alkaline Woolen-making liquid prepared by step 3 and carries out surface
Making herbs into wool, making herbs into wool temperature are 85oC, making herbs into wool time are 300 s.
Embodiment 2
Processing step is as follows：
1. configure flocking additive：By the copolymer of 1 g vinyl pyrrolidones-vinyl imidazole, 2 g polyethylene glycols third
Glycol-ethylene glycol copolymer, 0.1 g ethylenediamine tetra-acetic acids, 0.5 g MEAs, 0.05 g sodium benzoates and 0.5 g are to first
Benzene sulfonic acid sodium salt is dissolved into 100 ml deionized waters successively.
2. configure alkali lye：15 g potassium hydroxide are dissolved in 985 g deionized waters, obtain the hydrogen that mass fraction is 1.5%
Aoxidize aqueous solutions of potassium.
3. the alkaline Woolen-making liquid of configuration：By the alkali lye that the flocking additive obtained by step 1 and step 2 obtain using mass ratio as
1:100 is well mixed.
4. process for etching：Monocrystalline silicon piece used for solar batteries is submerged into alkaline Woolen-making liquid prepared by step 3 and carries out surface
Making herbs into wool, making herbs into wool temperature are 75oC, making herbs into wool time are 420 s.
Embodiment 3
Processing step is as follows：
1. configure flocking additive：By the copolymer of 2 g vinyl pyrrolidones-vinyl imidazole, 1 g polyethylene glycols third
Glycol-ethylene glycol copolymer, ethylenediamine tetra-acetic acid 0.5, MEA 3, sodium benzoate 0.1, paratoluenesulfonic acid sodium salt 0.5g
It is dissolved into successively in 100 ml deionized waters.
2. configure alkali lye：20 g sodium hydroxides are dissolved in 980 g deionized waters, obtain the hydrogen-oxygen that mass fraction is 2%
Change sodium water solution.
3. the alkaline Woolen-making liquid of configuration：By the alkali lye that the flocking additive obtained by step 1 and step 2 obtain using mass ratio as
0.1:100 is well mixed.
4. process for etching：Monocrystalline silicon piece used for solar batteries is submerged into alkaline Woolen-making liquid prepared by step 3 and carries out surface
Making herbs into wool, making herbs into wool temperature are 88oC, making herbs into wool time are 300 s.
Embodiment 4
Processing step is as follows：
1. configure flocking additive：By the copolymer of 1.5 g vinyl pyrrolidones-vinyl imidazole, 1.5 g polyethylene glycol-
Polypropylene glycol-ethylene glycol copolymer, ethylenediamine tetra-acetic acid 0.3, MEA 2, sodium benzoate 0.2, paratoluenesulfonic acid sodium salt
0.5 is dissolved into 100 ml deionized waters successively.
2. configure alkali lye：30 g sodium hydroxides are dissolved in 970 g deionized waters, obtain the hydrogen-oxygen that mass fraction is 3%
Change sodium water solution.
3. the alkaline Woolen-making liquid of configuration：By the alkali lye that the flocking additive obtained by step 1 and step 2 obtain using mass ratio as
0.2:100 is well mixed.
4. process for etching：Monocrystalline silicon piece used for solar batteries is submerged into alkaline Woolen-making liquid prepared by step 3 and carries out surface
Making herbs into wool, making herbs into wool temperature are 83oC, making herbs into wool time are 400 s.
The technical scheme provided using the present embodiment can quickly obtain tiny, uniform matte pyramid.Such as Fig. 1 and Fig. 2
Shown, obtained size reaches 10um；The method cost is relatively low, and efficiency is higher, significant effect, has splendid practical value.
Claims (4)
- A kind of 1. fine-hair maring using monocrystalline silicon slice additive, it is characterised in that：The additive is made up of following parts by weight of component：Vinylpyridine The copolymer 0.05-3% of pyrrolidone-vinyl imidazole, PEO-PPO-PEO 0.05-3%, second two Amine tetraacethyl 0.05-1%, MEA 0.1-5%, sodium benzoate 0.05-0.5%, paratoluenesulfonic acid sodium salt 0.1-2% and surplus Water.
- 2. fine-hair maring using monocrystalline silicon slice additive according to claim 1, it is characterised in that：Described vinyl pyrrolidone- The number-average molecular weight of the copolymer of vinyl imidazole is about 1,000-10,000.
- 3. fine-hair maring using monocrystalline silicon slice additive according to claim 1, it is characterised in that：Described polyethylene glycol the third two The number-average molecular weight of alcohol-ethylene glycol copolymer is about 5,00-10,000.
- 4. fine-hair maring using monocrystalline silicon slice additive according to claim 1, it is characterised in that：The pH of described flocking additive is 8-14。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711023941.7A CN107747131A (en) | 2017-10-27 | 2017-10-27 | A kind of fine-hair maring using monocrystalline silicon slice additive |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711023941.7A CN107747131A (en) | 2017-10-27 | 2017-10-27 | A kind of fine-hair maring using monocrystalline silicon slice additive |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107747131A true CN107747131A (en) | 2018-03-02 |
Family
ID=61253259
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711023941.7A Pending CN107747131A (en) | 2017-10-27 | 2017-10-27 | A kind of fine-hair maring using monocrystalline silicon slice additive |
Country Status (1)
| Country | Link |
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| CN (1) | CN107747131A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108103584A (en) * | 2017-11-13 | 2018-06-01 | 德清丽晶能源科技有限公司 | A kind of acid flocking additive and its application method that silicon chip surface processing is cut for polycrystalline diamond line |
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| CN1902292A (en) * | 2003-11-14 | 2007-01-24 | 昭和电工株式会社 | Polishing composition and polishing method |
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| CN108103584A (en) * | 2017-11-13 | 2018-06-01 | 德清丽晶能源科技有限公司 | A kind of acid flocking additive and its application method that silicon chip surface processing is cut for polycrystalline diamond line |
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Application publication date: 20180302 |