CN105113012A - High-homogeneity monocrystalline silicon piece texture surface making liquid and preparation method thereof - Google Patents
High-homogeneity monocrystalline silicon piece texture surface making liquid and preparation method thereof Download PDFInfo
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- CN105113012A CN105113012A CN201510515149.8A CN201510515149A CN105113012A CN 105113012 A CN105113012 A CN 105113012A CN 201510515149 A CN201510515149 A CN 201510515149A CN 105113012 A CN105113012 A CN 105113012A
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Abstract
The invention discloses high-homogeneity monocrystalline silicon piece texture surface making liquid. The high-homogeneity monocrystalline silicon piece texture surface making liquid is characterized by being prepared from, by weight, 0.5-1 part of sodium hydroxide, 0.3-0.5 part of hydroxypropyl guar gum, 0.1-0.2 part of dipropylene glycol monomethyl ether, 0.3-0.5 part of Turkey red oil, 0.3-0.5 part of disodium monolauryl sulfosuccinate, 0.5-1 part of sodium phytate, 3-5 parts of auxiliaries, 0.05-0.1 part of hydroxyl silicone oil and 80-100 parts of water. By means of the texture surface making liquid, the consistency and repeatability of the texture surface making process are effectively improved, the texture surface density is increased, the uniformity of the size and density of texture faces is effectively improved, and the product quality is improved; no IPA is contained, environment protection and human heath are facilitated, and the high-homogeneity monocrystalline silicon piece texture surface making liquid is safe and environmentally friendly.
Description
Technical field
The present invention relates to silicon wafer wool making technology, be specifically related to a kind of high uniformity wool making solution for monocrystalline silicon pieces and preparation method thereof.
Background technology
Along with energy dilemma is on the rise, sun power has become following most potential substitute energy, and solar cell industry development rapidly.Restrict one of difficult problem of its development is exactly how to improve solar cell photoelectric transformation efficiency, reduce costs.Wherein leather producing process is the important step improving photoelectric transformation efficiency.
Making herbs into wool is also known as " surface-texturing ", and effective suede structure makes incident light in silicon chip surface multiple reflections and refraction, adds the absorption of light, reduces reflectivity, contributes to the performance improving battery.Silicon single crystal leather producing process the most often uses chemical corrosion method, generally uses NaOH/ Virahol (IPA) system.IPA has suitable toxicity, has harm to human body, and IPA is easy to volatilization in making herbs into wool process simultaneously, produces detrimentally affect to environment.And this technique making herbs into wool effect controllability is poor, obtained matte is bigger than normal and uneven, affects photoelectric transformation efficiency and quality product.
Summary of the invention
The object of this invention is to provide a kind of high uniformity wool making solution for monocrystalline silicon pieces.
The present invention is achieved by the following technical solutions:
A kind of high uniformity wool making solution for monocrystalline silicon pieces, it is obtained by the raw material of following weight parts:
Sodium hydroxide 0.5-1, hydroxypropylguar gum 0.3-0.5, dipropylene glycol methyl ether 0.1-0.2, alizarin assistant 0.3-0.5, lauryl sulfosuccinic acid monoester disodium 0.3-0.5, sodium phytate 0.5-1, auxiliary agent 3-5, hydroxy silicon oil 0.05-0.1, water 80-100;
Wherein auxiliary agent is made up of the raw material of following weight part: Chinese honey locust 10-15, nano titanium oxide 0.1-0.15, ammonium persulphate 0.1-0.2, vinyl-acetic ester 1-1.5, sodium bicarbonate 0.2-0.4, Dodecyl Polyglucosides 1-2, water 100-150; The preparation method of auxiliary agent is by spaonin powder comminution powder, the spaonin powder obtained and sodium bicarbonate, Dodecyl Polyglucosides are added to the water jointly 70-80 DEG C, 200-400r/min stirs 4-6h, cooled and filtered, vinyl-acetic ester and nano titanium oxide is added and ultrasonic disperse 5-10min in filtrate, then ammonium persulfate solution 70-80 DEG C that adds 2-5% is stirred 1-2h, cooled and filtered, to obtain final product.
A preparation method for high uniformity wool making solution for monocrystalline silicon pieces, comprises the following steps:
(1) add in the water of 1/3-1/2 weight by lauryl sulfosuccinic acid monoester disodium, first 400-600r/min stirs 5-10min, then add alizarin assistant, hydroxy silicon oil 70-80 DEG C, 400-600r/min stir 10-20min, must component A after cooling;
(2) first sodium hydroxide is dissolved in remaining water, then adds all the other raw materials 40-60 DEG C, 200-400r/min stirs 2-4h, obtain B component;
(3) by mixed to component A and B component be incorporated in 70-80 DEG C, stir 10-15min under 1000-1500r/min condition, namely obtain high uniformity wool making solution for monocrystalline silicon pieces after filtration.
Advantage of the present invention is:
The present invention adopts the composite of the raw materials such as lauryl sulfosuccinic acid monoester disodium, the surface tension of effective hierarchy of control, the system of formation is made to have good surface property, stability and dispersive ability, there is good clean clean effect simultaneously, and in conjunction with auxiliary agent, surface modification is carried out to silicon chip, increase the nucleation site of silicon chip surface, promote the anisotropy of silicon single crystal, improve pyramidal density, by silicon chip surface film forming, control silicon chip corrosion speed in alkali lye, effectively improve consistence and the repeatability of leather producing process, improve matte density, the homogeneity of effective raising matte size and density, improve quality product, not containing IPA, be conducive to environment protection and HUMAN HEALTH, safety and environmental protection.
Embodiment
Non-limiting examples of the present invention is as follows:
A kind of high uniformity wool making solution for monocrystalline silicon pieces, is prepared from by the component raw material of following weight (kg):
Sodium hydroxide 0.5, hydroxypropylguar gum 0.3, dipropylene glycol methyl ether 0.1, alizarin assistant 0.3, lauryl sulfosuccinic acid monoester disodium 0.3, sodium phytate 0.5, auxiliary agent 3, hydroxy silicon oil 0.05, water 80;
Wherein, auxiliary agent is made up of the raw material of following weight (kg): Chinese honey locust 10, nano titanium oxide 0.1, ammonium persulphate 0.1, vinyl-acetic ester 1, sodium bicarbonate 0.2, Dodecyl Polyglucosides 1, water 100; The preparation method of auxiliary agent is by spaonin powder comminution powder, the spaonin powder obtained and sodium bicarbonate, Dodecyl Polyglucosides are added to the water jointly 80 DEG C, 200r/min stirs 4h, cooled and filtered, vinyl-acetic ester and nano titanium oxide is added and ultrasonic disperse 5min in filtrate, then the ammonium persulfate solution 70 DEG C adding 2% stirs 1h, cooled and filtered, to obtain final product.
The preparation method of high uniformity wool making solution for monocrystalline silicon pieces comprises the following steps:
(1) add in the water of 1/3 weight by lauryl sulfosuccinic acid monoester disodium, first 400r/min stirs 5min, then add alizarin assistant, hydroxy silicon oil 80 DEG C, 400r/min stir 10min, must component A after cooling;
(2) first sodium hydroxide is dissolved in remaining water, then adds all the other raw materials 60 DEG C, 400r/min stirs 2h, obtain B component;
(3) by mixed to component A and B component be incorporated in 80 DEG C, stir 15min under 1000r/min condition, namely obtain high uniformity wool making solution for monocrystalline silicon pieces after filtration.
Monocrystalline silicon piece is put into above-mentioned obtained Woolen-making liquid, under 80 DEG C of condition of water bath heating, carry out making herbs into wool, the making herbs into wool time is 15min, and the surface albedo of monocrystalline silicon piece is 8.9%, and matte pyramid is of a size of 2-3 μm, and size is even.
Claims (2)
1. a high uniformity wool making solution for monocrystalline silicon pieces, is characterized in that, it is obtained by the raw material of following weight parts:
Sodium hydroxide 0.5-1, hydroxypropylguar gum 0.3-0.5, dipropylene glycol methyl ether 0.1-0.2, alizarin assistant 0.3-0.5, lauryl sulfosuccinic acid monoester disodium 0.3-0.5, sodium phytate 0.5-1, auxiliary agent 3-5, hydroxy silicon oil 0.05-0.1, water 80-100;
Described auxiliary agent is made up of the raw material of following weight part: Chinese honey locust 10-15, nano titanium oxide 0.1-0.15, ammonium persulphate 0.1-0.2, vinyl-acetic ester 1-1.5, sodium bicarbonate 0.2-0.4, Dodecyl Polyglucosides 1-2, water 100-150; The preparation method of auxiliary agent is by spaonin powder comminution powder, the spaonin powder obtained and sodium bicarbonate, Dodecyl Polyglucosides are added to the water jointly 70-80 DEG C, 200-400r/min stirs 4-6h, cooled and filtered, vinyl-acetic ester and nano titanium oxide is added and ultrasonic disperse 5-10min in filtrate, then ammonium persulfate solution 70-80 DEG C that adds 2-5% is stirred 1-2h, cooled and filtered, to obtain final product.
2. the preparation method of a kind of high uniformity wool making solution for monocrystalline silicon pieces according to claim 1, is characterized in that, comprise the following steps:
(1) add in the water of 1/3-1/2 weight by lauryl sulfosuccinic acid monoester disodium, first 400-600r/min stirs 5-10min, then add alizarin assistant, hydroxy silicon oil 70-80 DEG C, 400-600r/min stir 10-20min, must component A after cooling;
(2) first sodium hydroxide is dissolved in remaining water, then adds all the other raw materials 40-60 DEG C, 200-400r/min stirs 2-4h, obtain B component;
(3) by mixed to component A and B component be incorporated in 70-80 DEG C, stir 10-15min under 1000-1500r/min condition, namely obtain high uniformity wool making solution for monocrystalline silicon pieces after filtration.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106521636A (en) * | 2016-12-30 | 2017-03-22 | 德清丽晶能源科技有限公司 | Single crystal wafer texturing additive |
| CN106835288A (en) * | 2016-12-30 | 2017-06-13 | 德清丽晶能源科技有限公司 | A kind of etching method of monocrystalline silicon piece |
| CN115260326A (en) * | 2022-07-26 | 2022-11-01 | 绍兴拓邦新能源股份有限公司 | Method for texturing surface of monocrystalline silicon by using alkali |
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| CN101717946A (en) * | 2009-12-30 | 2010-06-02 | 江阴市润玛电子材料有限公司 | Liquid and method for etching texture on surfaces of silicon wafers |
| CN103614778A (en) * | 2013-11-25 | 2014-03-05 | 英利能源（中国）有限公司 | Alcohol-free alkaline texturing solution for mono-crystalline silicon wafer, texturing method for mono-crystalline silicon wafer, solar cell and manufacturing method for solar cell |
| CN103938276A (en) * | 2013-01-23 | 2014-07-23 | 尚德太阳能电力有限公司 | Monocrystalline silicon wafer texturing additive, texturing solution and corresponding texturing method |
| CN104988581A (en) * | 2015-08-04 | 2015-10-21 | 绍兴拓邦电子科技有限公司 | Monocrystalline silicon piece spraying and texturing additive with high boiling point |
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2015
- 2015-08-21 CN CN201510515149.8A patent/CN105113012A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101717946A (en) * | 2009-12-30 | 2010-06-02 | 江阴市润玛电子材料有限公司 | Liquid and method for etching texture on surfaces of silicon wafers |
| CN103938276A (en) * | 2013-01-23 | 2014-07-23 | 尚德太阳能电力有限公司 | Monocrystalline silicon wafer texturing additive, texturing solution and corresponding texturing method |
| CN103614778A (en) * | 2013-11-25 | 2014-03-05 | 英利能源（中国）有限公司 | Alcohol-free alkaline texturing solution for mono-crystalline silicon wafer, texturing method for mono-crystalline silicon wafer, solar cell and manufacturing method for solar cell |
| CN104988581A (en) * | 2015-08-04 | 2015-10-21 | 绍兴拓邦电子科技有限公司 | Monocrystalline silicon piece spraying and texturing additive with high boiling point |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106521636A (en) * | 2016-12-30 | 2017-03-22 | 德清丽晶能源科技有限公司 | Single crystal wafer texturing additive |
| CN106835288A (en) * | 2016-12-30 | 2017-06-13 | 德清丽晶能源科技有限公司 | A kind of etching method of monocrystalline silicon piece |
| CN115260326A (en) * | 2022-07-26 | 2022-11-01 | 绍兴拓邦新能源股份有限公司 | Method for texturing surface of monocrystalline silicon by using alkali |
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