CN105133024A - Low-residue monocrystalline silicon slice texturing solution and preparation method thereof - Google Patents
Low-residue monocrystalline silicon slice texturing solution and preparation method thereof Download PDFInfo
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- CN105133024A CN105133024A CN201510515178.4A CN201510515178A CN105133024A CN 105133024 A CN105133024 A CN 105133024A CN 201510515178 A CN201510515178 A CN 201510515178A CN 105133024 A CN105133024 A CN 105133024A
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Abstract
The invention discloses a low-residue monocrystalline silicon slice texturing solution which is characterized by being prepared from the following raw materials in parts by weight: 0.5-1 part of sodium hydroxide, 3-5 parts of an auxiliary agent, 0.3-0.5 part of petroleum sodium sulfonate, 2-4 parts of potassium sodium tartrate, 3-5 parts of sorbitol, 0.3-0.5 part of nonylphenol polyoxyethylene ether, 0.2-0.4 part of dioctyl sodium sulfosuccinate, 0.2-0.4 part of hydroxypropyl starch ether, and 80-100 parts of water. The texturing solution improves the consistency and repeatability of a texturing technology, increases the textured surface density, thereby increasing the efficiency of solar cells and improving the quality of the product; the texturing solution does not contain IPA, is beneficial to environmental protection and human health, and is safe and environmentally friendly; and silicon slice surface residues are less in amount and easy to remove, and do not affect the surface processing and product performance of the silicon slice.
Description
Technical field
The present invention relates to silicon wafer wool making technology, be specifically related to a kind of low residue wool making solution for monocrystalline silicon pieces and preparation method thereof.
Background technology
Along with energy dilemma is on the rise, sun power has become following most potential substitute energy, and solar cell industry development rapidly.Restrict one of difficult problem of its development is exactly how to improve solar cell photoelectric transformation efficiency, reduce costs.Wherein leather producing process is the important step improving photoelectric transformation efficiency.
Making herbs into wool is also known as " surface-texturing ", and effective suede structure makes incident light in silicon chip surface multiple reflections and refraction, adds the absorption of light, reduces reflectivity, contributes to the performance improving battery.Silicon single crystal leather producing process the most often uses chemical corrosion method, generally uses NaOH/ Virahol (IPA) system.IPA has suitable toxicity, has harm to human body, and IPA is easy to volatilization in making herbs into wool process simultaneously, produces detrimentally affect to environment.Woolen-making liquid is also unfavorable for the process of subsequent technique and the quality stability of silicon chip the residual of silicon chip surface.
Summary of the invention
The object of this invention is to provide a kind of low residue wool making solution for monocrystalline silicon pieces.
The present invention is achieved by the following technical solutions:
A kind of low residue wool making solution for monocrystalline silicon pieces, it is obtained by the raw material of following weight parts:
Sodium hydroxide 0.5-1, auxiliary agent 3-5, petroleum sodium sulfonate 0.3-0.5, Seignette salt 2-4, sorbyl alcohol 3-5, polyoxyethylene nonylphenol ether 0.3-0.5, Dioctyl Sodium Sulfosuccinate 0.2-0.4, hydroxypropyl starch ether 0.2-0.4, water 80-100;
Wherein auxiliary agent is made up of the raw material of following weight part: Chinese honey locust 10-15, nano titanium oxide 0.1-0.15, ammonium persulphate 0.1-0.2, vinyl-acetic ester 1-1.5, sodium bicarbonate 0.2-0.4, Dodecyl Polyglucosides 1-2, water 100-150; The preparation method of auxiliary agent is by spaonin powder comminution powder, the spaonin powder obtained and sodium bicarbonate, Dodecyl Polyglucosides are added to the water jointly 70-80 DEG C, 200-400r/min stirs 4-6h, cooled and filtered, vinyl-acetic ester and nano titanium oxide is added and ultrasonic disperse 5-10min in filtrate, then ammonium persulfate solution 70-80 DEG C that adds 2-5% is stirred 1-2h, cooled and filtered, to obtain final product.
A preparation method for low residue wool making solution for monocrystalline silicon pieces, comprises the following steps:
(1) petroleum sodium sulfonate, polyoxyethylene nonylphenol ether are added jointly in the water of 1/3-1/2 weight, first 400-600r/min stirs 5-10min, add Dioctyl Sodium Sulfosuccinate 70-80 DEG C again, 400-600r/min stir 10-20min, after cooling component A;
(2) first sodium hydroxide is dissolved in remaining water, then adds all the other raw materials 40-60 DEG C, 200-400r/min stirs 2-4h, obtain B component;
(3) by mixed to component A and B component be incorporated in 70-80 DEG C, stir 10-15min under 1000-1500r/min condition, namely obtain low residue wool making solution for monocrystalline silicon pieces after filtration.
Advantage of the present invention is:
The present invention adopts the composite of the raw materials such as polyoxyethylene nonylphenol ether, the surface tension of effective hierarchy of control, the system of formation is made to have good surface property, stability and dispersive ability, there is good clean clean effect simultaneously, and in conjunction with auxiliary agent, surface modification is carried out to silicon chip, increase the nucleation site of silicon chip surface, promote the anisotropy of silicon single crystal, improve pyramidal density, by silicon chip surface film forming, control silicon chip corrosion speed in alkali lye, effectively improve consistence and the repeatability of leather producing process, improve matte density, thus improve solar battery efficiency, improve quality product, not containing IPA, be conducive to environment protection and HUMAN HEALTH, safety and environmental protection, and at silicon chip surface less residue, be easy to remove, do not affect surface treatment and the product performance of silicon chip.
Embodiment
Non-limiting examples of the present invention is as follows:
A kind of low residue wool making solution for monocrystalline silicon pieces, is prepared from by the component raw material of following weight (kg):
Sodium hydroxide 0.5, auxiliary agent 3, petroleum sodium sulfonate 0.3, Seignette salt 2, sorbyl alcohol 3, polyoxyethylene nonylphenol ether 0.3, Dioctyl Sodium Sulfosuccinate 0.2, hydroxypropyl starch ether 0.2, water 80;
Wherein, auxiliary agent is made up of the raw material of following weight (kg): Chinese honey locust 10, nano titanium oxide 0.1, ammonium persulphate 0.1, vinyl-acetic ester 1, sodium bicarbonate 0.2, Dodecyl Polyglucosides 1, water 100; The preparation method of auxiliary agent is by spaonin powder comminution powder, the spaonin powder obtained and sodium bicarbonate, Dodecyl Polyglucosides are added to the water jointly 80 DEG C, 200r/min stirs 4h, cooled and filtered, vinyl-acetic ester and nano titanium oxide is added and ultrasonic disperse 5min in filtrate, then the ammonium persulfate solution 70 DEG C adding 2% stirs 1h, cooled and filtered, to obtain final product.
The preparation method of low residue wool making solution for monocrystalline silicon pieces comprises the following steps:
(1) petroleum sodium sulfonate, polyoxyethylene nonylphenol ether are jointly added in the water of 1/3 weight, first 400r/min stirs 5min, then add Dioctyl Sodium Sulfosuccinate 80 DEG C, 600r/min stirs 10min, must component A after cooling;
(2) first sodium hydroxide is dissolved in remaining water, then adds all the other raw materials 60 DEG C, 400r/min stirs 2h, obtain B component;
(3) by mixed to component A and B component be incorporated in 80 DEG C, stir 15min under 1000r/min condition, namely obtain low residue wool making solution for monocrystalline silicon pieces after filtration.
Monocrystalline silicon piece is put into above-mentioned obtained Woolen-making liquid, under 80 DEG C of condition of water bath heating, carry out making herbs into wool, the making herbs into wool time is 15min, and the surface albedo of monocrystalline silicon piece is 10.9%, and matte pyramid is of a size of 1.5-3 μm, and size is even.
Claims (2)
1. a low residue wool making solution for monocrystalline silicon pieces, is characterized in that, it is obtained by the raw material of following weight parts:
Sodium hydroxide 0.5-1, auxiliary agent 3-5, petroleum sodium sulfonate 0.3-0.5, Seignette salt 2-4, sorbyl alcohol 3-5, polyoxyethylene nonylphenol ether 0.3-0.5, Dioctyl Sodium Sulfosuccinate 0.2-0.4, hydroxypropyl starch ether 0.2-0.4, water 80-100;
Described auxiliary agent is made up of the raw material of following weight part: Chinese honey locust 10-15, nano titanium oxide 0.1-0.15, ammonium persulphate 0.1-0.2, vinyl-acetic ester 1-1.5, sodium bicarbonate 0.2-0.4, Dodecyl Polyglucosides 1-2, water 100-150; The preparation method of auxiliary agent is by spaonin powder comminution powder, the spaonin powder obtained and sodium bicarbonate, Dodecyl Polyglucosides are added to the water jointly 70-80 DEG C, 200-400r/min stirs 4-6h, cooled and filtered, vinyl-acetic ester and nano titanium oxide is added and ultrasonic disperse 5-10min in filtrate, then ammonium persulfate solution 70-80 DEG C that adds 2-5% is stirred 1-2h, cooled and filtered, to obtain final product.
2. the preparation method of a kind of low residue wool making solution for monocrystalline silicon pieces according to claim 1, is characterized in that, comprise the following steps:
(1) petroleum sodium sulfonate, polyoxyethylene nonylphenol ether are added jointly in the water of 1/3-1/2 weight, first 400-600r/min stirs 5-10min, add Dioctyl Sodium Sulfosuccinate 70-80 DEG C again, 400-600r/min stir 10-20min, after cooling component A;
(2) first sodium hydroxide is dissolved in remaining water, then adds all the other raw materials 40-60 DEG C, 200-400r/min stirs 2-4h, obtain B component;
(3) by mixed to component A and B component be incorporated in 70-80 DEG C, stir 10-15min under 1000-1500r/min condition, namely obtain low residue wool making solution for monocrystalline silicon pieces after filtration.
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102181935A (en) * | 2010-10-26 | 2011-09-14 | 江阴浚鑫科技有限公司 | Method and corrosive liquid for making texture surface of monocrystalline silicon |
CN102586888A (en) * | 2012-03-15 | 2012-07-18 | 苏州先拓光伏科技有限公司 | Non-alcoholic monocrystalline silicon flock making additive |
CN102787361A (en) * | 2012-09-07 | 2012-11-21 | 中国船舶重工集团公司第七一八研究所 | Additive for texturing solution of monocrystalline silicon |
CN103614778A (en) * | 2013-11-25 | 2014-03-05 | 英利能源(中国)有限公司 | Alcohol-free alkaline texturing solution for mono-crystalline silicon wafer, texturing method for mono-crystalline silicon wafer, solar cell and manufacturing method for solar cell |
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- 2015-08-21 CN CN201510515178.4A patent/CN105133024A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102181935A (en) * | 2010-10-26 | 2011-09-14 | 江阴浚鑫科技有限公司 | Method and corrosive liquid for making texture surface of monocrystalline silicon |
CN102586888A (en) * | 2012-03-15 | 2012-07-18 | 苏州先拓光伏科技有限公司 | Non-alcoholic monocrystalline silicon flock making additive |
CN102787361A (en) * | 2012-09-07 | 2012-11-21 | 中国船舶重工集团公司第七一八研究所 | Additive for texturing solution of monocrystalline silicon |
CN103614778A (en) * | 2013-11-25 | 2014-03-05 | 英利能源(中国)有限公司 | Alcohol-free alkaline texturing solution for mono-crystalline silicon wafer, texturing method for mono-crystalline silicon wafer, solar cell and manufacturing method for solar cell |
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Application publication date: 20151209 |