CN102330091A - Additive for polycrystalline silicon wafer acidity texture preparation liquid and use method thereof - Google Patents
Additive for polycrystalline silicon wafer acidity texture preparation liquid and use method thereof Download PDFInfo
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- CN102330091A CN102330091A CN 201110212876 CN201110212876A CN102330091A CN 102330091 A CN102330091 A CN 102330091A CN 201110212876 CN201110212876 CN 201110212876 CN 201110212876 A CN201110212876 A CN 201110212876A CN 102330091 A CN102330091 A CN 102330091A
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- woolen
- wool
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- 239000007788 liquid Substances 0.000 title claims abstract description 47
- 239000000654 additive Substances 0.000 title claims abstract description 37
- 230000000996 additive effect Effects 0.000 title claims abstract description 37
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 19
- 238000002360 preparation method Methods 0.000 title abstract description 9
- 239000002253 acid Substances 0.000 claims description 40
- 210000002268 wool Anatomy 0.000 claims description 36
- 235000008216 herbs Nutrition 0.000 claims description 31
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 24
- 229920005591 polysilicon Polymers 0.000 claims description 23
- 239000008367 deionised water Substances 0.000 claims description 16
- 229910021641 deionized water Inorganic materials 0.000 claims description 16
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 14
- 229910017604 nitric acid Inorganic materials 0.000 claims description 14
- 239000003795 chemical substances by application Substances 0.000 claims description 12
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 claims description 6
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 6
- 229960004418 trolamine Drugs 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- 238000004381 surface treatment Methods 0.000 claims description 2
- 230000004075 alteration Effects 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 5
- 230000007797 corrosion Effects 0.000 abstract description 3
- 238000005260 corrosion Methods 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000004880 explosion Methods 0.000 abstract description 2
- 231100000956 nontoxicity Toxicity 0.000 abstract description 2
- 230000007794 irritation Effects 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 239000003929 acidic solution Substances 0.000 description 2
- 238000002389 environmental scanning electron microscopy Methods 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 239000010985 leather Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
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Abstract
The invention relates an additive for a polycrystalline silicon wafer acidity texture preparation liquid, an acidity texture preparation solution containing the additive and a preparation method thereof, and a method for making texture for the polycrystalline silicon wafer by adding the additive or acidity texture preparation solution. According to the invention, the texture with the advantages of good evenness, small and even suede size can be obtained, and crystal particles do not have obvious chromatic aberration. The additive disclosed by the invention has the advantages of no toxicity, no corrosion, no irritation as well as no burning and explosion danger and is harmless to the human body and the environment. In addition, the solution has the advantages of simplicity in preparation and use technology, simple equipment and good repeatability.
Description
Technical field
The present invention relates to the acid Woolen-making liquid of a kind of polysilicon chip additive, contain acid Wool-making agent of said additive and preparation method thereof, and the method for using this additive or acid Wool-making agent polysilicon chip to be carried out making herbs into wool.
Background technology
Prepare in the process at solar cell piece; For performance and the efficient that improves solar cell; Need make matte at silicon chip surface, effectively suede structure can change the working direction of incident light in silicon so that the incident sunshine carries out multiple reflection and refraction at silicon chip surface.On the one hand, prolonged light path, thereby increased the specific absorption of silicon chip infrared light; On the other hand, make more photon be absorbed the generation photo-generated carrier near near the zone the pn knot, these photo-generated carriers are collected more easily, have therefore increased the collection effciency of photo-generated carrier.
For polycrystalline silicon solar cell, silicon chip surface making herbs into wool is the key link in its manufacturing processed.The effect of making herbs into wool has directly influenced the efficiency of conversion and the yield rate of final battery sheet.Because polysilicon chip is made up of the crystal grain of different crystal orientations, and the crystal orientation of each crystal grain arbitrarily distributes, and therefore, the wet-chemical etching methods of many employing acidic solutions are carried out making herbs into wool to the polysilicon chip surface in general leather producing process.This leather producing process forms similar pit shape matte based on the isotropic etch principle of acidic solution to silicon at the different grain surfaces of silicon chip, and the pattern of matte and grain orientation are irrelevant.
At present, acid Woolen-making liquid commonly used is made up of nitric acid, hydrofluoric acid and deionized water etc. in the industrial production.The making herbs into wool effect of this acid Woolen-making liquid is not very good; The problem that exists comprises: the matte size is big and homogeneity is not good, and different intergranule aberration are apparent in view, has the deep corrosion hole of macro morphology such as black line shape; Surface albedo is higher, and making herbs into wool stability is bad.Therefore, if can solve the problems referred to above, will have great importance through in acid Woolen-making liquid, adding the making herbs into wool additive.
Summary of the invention
The present invention provides a kind of additive that is used for the acid Woolen-making liquid of polysilicon chip, and wherein said additive is made up of the water of trolamine, Vinylpyrrolidone polymer and surplus, and wherein said water is preferably deionized water.The volume ratio of trolamine and water is 0.1～10: 100, and the weight ratio of Vinylpyrrolidone polymer and water is 0.001～0.1: 100.When solar cell is carried out surface wool manufacturing with polysilicon chip, additive of the present invention is joined in the acid Woolen-making liquid, reach excellent making herbs into wool effect.
The present invention provides a kind of Wool-making agent that the polysilicon chip surface treatment is used that is used in addition; It is characterized in that wherein comprising acid Woolen-making liquid and above-mentioned additive; Wherein said acid Woolen-making liquid makes through hydrofluoric acid and nitric acid are dissolved in deionized water; And the weight percentage of hydrofluoric acid is 7～14% in the acid Woolen-making liquid, and the weight percentage of nitric acid is 30～60%, and the weight ratio of wherein said additive and acid Woolen-making liquid is 0.5～2: 100.
The present invention also provides a kind of compound method that polysilicon surface is handled the Wool-making agent of usefulness that is used for, and comprises
(1) hydrofluoric acid and nitric acid are dissolved in the deionized water, obtain acid Woolen-making liquid, wherein the weight percentage of hydrofluoric acid is 7～14%, and the weight percentage of nitric acid is 30～60%.
(2) the above-mentioned additive of the present invention is added in the acid Woolen-making liquid in the step (1), obtain Wool-making agent, the weight ratio of wherein said additive and Woolen-making liquid is 0.5～2: 100.
The present invention provides a kind of polysilicon etching method simultaneously; Comprise additive of the present invention is added in the acid Woolen-making liquid; Then polysilicon is immersed in and carries out making herbs into wool in the Woolen-making liquid that is added with additive, the weight ratio of said additive and Woolen-making liquid is 0.5～2: 100, and the making herbs into wool temperature is 0～25 ℃; The making herbs into wool time is 100～400s, and the making herbs into wool temperature is preferably 2～10 ℃.
After adopting this additive and method of use to carry out silicon chip surface making herbs into wool, the silicon chip surface intergranule does not have obvious aberration, the no black line in surface, and reflectivity is lower.
The invention has the advantages that: after adopting this additive and method of use, can obtain the matte that good uniformity, intercrystalline do not have obvious aberration, the matte size is tiny evenly.Additive nontoxicity of the present invention, non-corrosiveness, nonirritant does not have burning and explosion hazard, and human body and environment are not had harm; And the configuration of solution and use technology are simple, cheap device, good reproducibility.
Description of drawings
Fig. 1 is the ESEM plane photo of the polysilicon chip surface matte that obtains of embodiment 1.
Embodiment
Embodiment 1
Take following process step:
1) additive preparation: with the 100ml deionized water is solvent, and 0.5ml trolamine, 0.1g Vinylpyrrolidone polymer are dissolved in the deionized water;
2) prepare acid Woolen-making liquid: 1L hydrofluoric acid and 4L nitric acid are dissolved in the 5L deionized water, to obtain the acid Woolen-making liquid of 10L;
3) prepare acid Wool-making agent: in the acid Woolen-making liquid of 10L, add the 100ml additive;
4) making herbs into wool: with carrying out surface wool manufacturing in the polysilicon chip immersion Woolen-making liquid, the making herbs into wool temperature is 4 ℃ with solar cell, and the making herbs into wool time is 300 seconds.
Fig. 1 has provided the ESEM plane photo of the polysilicon chip surface matte that obtains, and from figure, can see after the making herbs into wool matte that has formed the pit shape on the polysilicon chip surface, and the matte size is tiny and distribute more even.
Embodiment 2
Take following process step:
1) additive preparation: with the 100ml deionized water is solvent, and 2ml trolamine, 0.01g Vinylpyrrolidone polymer are dissolved in the deionized water;
2) prepare acid Woolen-making liquid: 2L hydrofluoric acid and 6L nitric acid are dissolved in the 5L deionized water, to obtain the acid Woolen-making liquid of 13L;
3) prepare acid Wool-making agent: in the acid Woolen-making liquid of 13L, add the 65ml additive;
4) making herbs into wool: with carrying out surface wool manufacturing in the polysilicon chip immersion Woolen-making liquid, the making herbs into wool temperature is 7 ℃ with solar cell, and the making herbs into wool time is 150 seconds.
Embodiment 3 (contrast)
Take following process step:
1) prepares acid Woolen-making liquid: 1L hydrofluoric acid and 4L nitric acid are dissolved in the 5L deionized water, to obtain the acid Woolen-making liquid of 10L;
2) making herbs into wool: with carrying out surface wool manufacturing in the polysilicon chip immersion Woolen-making liquid, the making herbs into wool temperature is 7 ℃ with solar cell, and the making herbs into wool time is 150 seconds.
Embodiment 4 (contrast)
Take following process step:
1) prepares acid Woolen-making liquid: 2L hydrofluoric acid and 6L nitric acid are dissolved in the 5L deionized water, to obtain the acid Woolen-making liquid of 13L;
2) making herbs into wool: with carrying out surface wool manufacturing in the polysilicon chip immersion Woolen-making liquid, the making herbs into wool temperature is 7 ℃ with solar cell, and the making herbs into wool time is 300 seconds.
The present invention adds the comparative result of acid Woolen-making liquid of later acid Wool-making agent of additive and current use referring to table 1
Table 1
| Embodiment 1 | Embodiment 2 | Embodiment 3 | Embodiment 4 | |
| The pyramid size | About 2.5 microns | About 3 microns | About 8 microns | About 9 microns |
| Pyramid distributes | Evenly, rule | Evenly, rule | Inhomogeneous, mixed and disorderly | Inhomogeneous, mixed and disorderly |
Acid Woolen-making liquid commonly used in the industrial production is made up of nitric acid, hydrofluoric acid and deionized water etc.The making herbs into wool effect of this acid Woolen-making liquid is not very good; The problem that exists comprises: the matte size is big and homogeneity is not good, and different intergranule aberration are apparent in view, has the deep corrosion hole of macro morphology such as black line shape; Surface albedo is higher, and making herbs into wool stability is bad.
Claims (7)
1. additive that is used for the acid Woolen-making liquid of polysilicon chip, it is characterized in that the component that wherein comprises is: the water of trolamine, Vinylpyrrolidone polymer and surplus, wherein said water is preferably deionized water.
2. additive according to claim 1, wherein the volume ratio of trolamine and water is 0.1～10: 100, the weight ratio of Vinylpyrrolidone polymer and water is 0.001～0.1: 100.
3. one kind is used for the Wool-making agent that the polysilicon chip surface treatment is used; It is characterized in that wherein comprising any described additive among acid Woolen-making liquid and the claim 1-2; Wherein said acid Woolen-making liquid makes through hydrofluoric acid and nitric acid are dissolved in deionized water; And the weight percentage of hydrofluoric acid is 7～14% in the acid Woolen-making liquid, and the weight percentage of nitric acid is 30～60%.
4. Wool-making agent according to claim 3, the weight ratio of wherein said additive and acid Woolen-making liquid are 0.5～2: 100.
5. one kind is used for the compound method that polysilicon surface is handled the Wool-making agent of usefulness, comprises
(1) hydrofluoric acid and nitric acid are dissolved in the deionized water, obtain acid Woolen-making liquid, wherein the weight percentage of hydrofluoric acid is 7～14%, and the weight percentage of nitric acid is 30～60%.
(2) additive among the claim 1-2 is added in the acid Woolen-making liquid in the step (1), obtain Wool-making agent, the weight ratio of wherein said additive and Woolen-making liquid is 0.5～2: 100.
6. polysilicon etching method; It is characterized in that; Any described additive among the claim 1-2 is added in the acid Woolen-making liquid, polysilicon is immersed in carries out making herbs into wool in the Woolen-making liquid that is added with additive then, the making herbs into wool temperature is 0～25 ℃; Preferred 2-10 ℃, the making herbs into wool time is 100～400s.
7. etching method according to claim 6, the weight ratio that it is characterized in that said additive and Woolen-making liquid is 0.5～2: 100.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102128769A CN102330091B (en) | 2011-07-27 | 2011-07-27 | Additive for polycrystalline silicon wafer acidity texture preparation liquid and use method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102128769A CN102330091B (en) | 2011-07-27 | 2011-07-27 | Additive for polycrystalline silicon wafer acidity texture preparation liquid and use method thereof |
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| Publication Number | Publication Date |
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| CN102330091A true CN102330091A (en) | 2012-01-25 |
| CN102330091B CN102330091B (en) | 2012-07-04 |
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| CN2011102128769A Expired - Fee Related CN102330091B (en) | 2011-07-27 | 2011-07-27 | Additive for polycrystalline silicon wafer acidity texture preparation liquid and use method thereof |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102787361A (en) * | 2012-09-07 | 2012-11-21 | 中国船舶重工集团公司第七一八研究所 | Additive for texturing solution of monocrystalline silicon |
| CN102969397A (en) * | 2012-11-13 | 2013-03-13 | 国电光伏(江苏)有限公司 | Flocking method for reducing flocking dark fringes of polycrystalline silicon |
| CN102978710A (en) * | 2012-08-13 | 2013-03-20 | 杭州道乐太阳能技术有限公司 | Silicon solar cell surface light trapping structure and preparation method thereof |
| CN103409808A (en) * | 2013-09-04 | 2013-11-27 | 常州时创能源科技有限公司 | Texturization additive for polycrystalline silicon slices and use method of texturization additive |
| CN103993360A (en) * | 2014-06-09 | 2014-08-20 | 常州时创能源科技有限公司 | Polysilicon wafer etching assistant and application thereof |
| CN104060325A (en) * | 2014-06-20 | 2014-09-24 | 润峰电力有限公司 | Polycrystalline silicon texturing solution and texturing method thereof |
| CN104342702A (en) * | 2013-08-05 | 2015-02-11 | 南京科乃迪科环保科技有限公司 | Auxiliary chemical composition for monocrystalline silicon or polycrystalline silicon acidic wool making |
| CN104651949A (en) * | 2015-02-11 | 2015-05-27 | 常州君合科技股份有限公司 | Multi-crystalline silicon wafer texturization additive |
| CN105040108A (en) * | 2015-08-21 | 2015-11-11 | 浙江启鑫新能源科技股份有限公司 | Texture surface making method for polycrystalline silicon solar battery |
| CN105140348A (en) * | 2015-09-25 | 2015-12-09 | 山西潞安太阳能科技有限责任公司 | Backside passivation technology of polycrystal solar cell |
| CN105304734A (en) * | 2015-11-03 | 2016-02-03 | 苏州旭环光伏科技有限公司 | Polycrystalline silicon wafer texturing auxiliary and application method thereof |
| CN108103584A (en) * | 2017-11-13 | 2018-06-01 | 德清丽晶能源科技有限公司 | A kind of acid flocking additive and its application method that silicon chip surface processing is cut for polycrystalline diamond line |
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2011
- 2011-07-27 CN CN2011102128769A patent/CN102330091B/en not_active Expired - Fee Related
Patent Citations (3)
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| CN1614789A (en) * | 2004-09-30 | 2005-05-11 | 无锡尚德太阳能电力有限公司 | Method for preparing polycrystalline silicon suede |
| CN1983645A (en) * | 2005-12-13 | 2007-06-20 | 上海太阳能科技有限公司 | Production of polycrystalline silicon solar battery suede |
| WO2007107053A1 (en) * | 2006-03-21 | 2007-09-27 | Wuxi Suntech Power Co., Ltd. | An acid corrosion soluton for preparing polysilicon suede and the applied method of it |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102978710A (en) * | 2012-08-13 | 2013-03-20 | 杭州道乐太阳能技术有限公司 | Silicon solar cell surface light trapping structure and preparation method thereof |
| CN102787361A (en) * | 2012-09-07 | 2012-11-21 | 中国船舶重工集团公司第七一八研究所 | Additive for texturing solution of monocrystalline silicon |
| CN102787361B (en) * | 2012-09-07 | 2015-07-29 | 中国船舶重工集团公司第七一八研究所 | A kind of additive for monocrystalline silicon etching solution |
| CN102969397A (en) * | 2012-11-13 | 2013-03-13 | 国电光伏(江苏)有限公司 | Flocking method for reducing flocking dark fringes of polycrystalline silicon |
| CN104342702A (en) * | 2013-08-05 | 2015-02-11 | 南京科乃迪科环保科技有限公司 | Auxiliary chemical composition for monocrystalline silicon or polycrystalline silicon acidic wool making |
| CN103409808A (en) * | 2013-09-04 | 2013-11-27 | 常州时创能源科技有限公司 | Texturization additive for polycrystalline silicon slices and use method of texturization additive |
| WO2015032154A1 (en) * | 2013-09-04 | 2015-03-12 | 常州时创能源科技有限公司 | Polycrystalline silicon wafer texturizing additive and use thereof |
| CN103409808B (en) * | 2013-09-04 | 2015-10-21 | 常州时创能源科技有限公司 | Polycrystalline silicon texturing additive and using method thereof |
| CN103993360B (en) * | 2014-06-09 | 2016-08-24 | 常州时创能源科技有限公司 | Polycrystalline silicon texturing adjuvant and application thereof |
| CN103993360A (en) * | 2014-06-09 | 2014-08-20 | 常州时创能源科技有限公司 | Polysilicon wafer etching assistant and application thereof |
| CN104060325A (en) * | 2014-06-20 | 2014-09-24 | 润峰电力有限公司 | Polycrystalline silicon texturing solution and texturing method thereof |
| CN104651949A (en) * | 2015-02-11 | 2015-05-27 | 常州君合科技股份有限公司 | Multi-crystalline silicon wafer texturization additive |
| CN105040108A (en) * | 2015-08-21 | 2015-11-11 | 浙江启鑫新能源科技股份有限公司 | Texture surface making method for polycrystalline silicon solar battery |
| CN105040108B (en) * | 2015-08-21 | 2017-11-17 | 浙江启鑫新能源科技股份有限公司 | The etching method of polysilicon solar cell |
| CN105140348A (en) * | 2015-09-25 | 2015-12-09 | 山西潞安太阳能科技有限责任公司 | Backside passivation technology of polycrystal solar cell |
| CN105140348B (en) * | 2015-09-25 | 2017-01-11 | 山西潞安太阳能科技有限责任公司 | Backside passivation technology of polycrystal solar cell |
| CN105304734A (en) * | 2015-11-03 | 2016-02-03 | 苏州旭环光伏科技有限公司 | Polycrystalline silicon wafer texturing auxiliary and application method thereof |
| CN108103584A (en) * | 2017-11-13 | 2018-06-01 | 德清丽晶能源科技有限公司 | A kind of acid flocking additive and its application method that silicon chip surface processing is cut for polycrystalline diamond line |
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Address after: Liyang City, Jiangsu province 213300 Li Cheng Zhen Wu Changzhou city Tandu Road No. 8 Patentee after: Changzhou Shichuang Energy Co.,Ltd. Address before: 213300 Liyang province Jiangsu City Licheng town Wuhu Road No. 168 Patentee before: CHANGZHOU SHICHUANG ENERGY TECHNOLOGY Co.,Ltd. |
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Granted publication date: 20120704 |