CN106409983A - Diamond wire slice texturing method - Google Patents
Diamond wire slice texturing method Download PDFInfo
- Publication number
- CN106409983A CN106409983A CN201611085272.1A CN201611085272A CN106409983A CN 106409983 A CN106409983 A CN 106409983A CN 201611085272 A CN201611085272 A CN 201611085272A CN 106409983 A CN106409983 A CN 106409983A
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- China
- Prior art keywords
- diamond wire
- section
- wire section
- minitype particle
- sprayed
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 100
- 239000010432 diamond Substances 0.000 title claims abstract description 100
- 238000000034 method Methods 0.000 title claims abstract description 62
- 230000008569 process Effects 0.000 claims abstract description 14
- 239000012535 impurity Substances 0.000 claims abstract description 10
- 239000002253 acid Substances 0.000 claims abstract description 9
- 238000006243 chemical reaction Methods 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims description 47
- 239000002245 particle Substances 0.000 claims description 39
- 235000008216 herbs Nutrition 0.000 claims description 17
- 210000002268 wool Anatomy 0.000 claims description 17
- 238000002347 injection Methods 0.000 claims description 13
- 239000007924 injection Substances 0.000 claims description 13
- 230000004913 activation Effects 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000003513 alkali Substances 0.000 claims description 6
- 239000000243 solution Substances 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- XWROUVVQGRRRMF-UHFFFAOYSA-N F.O[N+]([O-])=O Chemical compound F.O[N+]([O-])=O XWROUVVQGRRRMF-UHFFFAOYSA-N 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 239000000835 fiber Substances 0.000 claims description 3
- 230000002209 hydrophobic effect Effects 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 229910021426 porous silicon Inorganic materials 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 claims 1
- 229910052708 sodium Inorganic materials 0.000 claims 1
- 239000011734 sodium Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052710 silicon Inorganic materials 0.000 abstract description 8
- 239000010703 silicon Substances 0.000 abstract description 8
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000003912 environmental pollution Methods 0.000 abstract description 2
- 239000011859 microparticle Substances 0.000 abstract 3
- 230000005284 excitation Effects 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 description 5
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 description 2
- -1 Ag ion) Chemical class 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preliminary Treatment Of Fibers (AREA)
Abstract
The invention discloses a diamond wire slice texturing method. The method comprises the steps that microparticles are sprayed onto the surface of a diamond wire slice to form a rough surface to provide reaction excitation points for texturing; and an acid texturing process is used to prepare a textured structure on the surface of the diamond wire slice. Due to the fact that the microparticles are sprayed to form the rough surface, environmental pollution is prevented, and impurities are not introduced into a silicon slice. The surface of the diamond wire slice is constantly hit by the microparticles, so that the surface becomes rough and is beneficial to texturing. A conventional acid texturing technology is used. According to the diamond wire slice texturing method provided by the invention, the introduction of impurities into the process and the introduction of pollution into the environment can be prevented, and the texturing cost is reduced.
Description
Technical field
The invention belongs to photovoltaic apparatus manufacturing technology field, more particularly to a kind of etching method of diamond wire section.
Background technology
Silicon wafer cut by diamond wire gradually substituted for mortar wire cutting mode at present, is because diamond wire low cost, and speed is fast,
Income is high, and cleaning pollution is little.
But, the damage layer on silicon wafer cut by diamond wire surface is few, and silicon chip surface is smooth, and therefore diamond wire cutting sheet cannot profit
Obtain the uniform suede structure of high-quality with conventional acid process for etching, but need to carry out making herbs into wool using RIE or MCT technique.Its
In, RIE is one kind of dry etching technology, i.e. reactive ion etching technology needs using radio-frequency unit and SF6Gas, equipment
High cost, and gas is to environment, and MCT is one kind of wet etching, i.e. metal inducement catalysis technique, needs to utilize
Heavy metal ion (such as Ag ion), thus introduce impurity to processing procedure, to environment.
Content of the invention
For solving the above problems, the invention provides a kind of etching method of diamond wire section, it can be avoided that drawing to processing procedure
Enter impurity and pollution is introduced to environment, and reduce making herbs into wool cost.
A kind of etching method of diamond wire section that the present invention provides, including：
To the surface injection minitype particle of diamond wire section, form coarse surface, provide reaction activation point for making herbs into wool；
Prepare suede structure on the surface of described diamond wire section using sour process for etching.
Preferably, in the etching method of above-mentioned diamond wire section,
Minitype particle is sprayed on the described surface to diamond wire section：
Injecting-unit is fixed, movement described diamond wire section, until all surfaces of described diamond wire section have sprayed
Finish.
Preferably, in the etching method of above-mentioned diamond wire section,
Minitype particle is sprayed on the described surface to diamond wire section：
Minitype particle is sprayed to the surface that described diamond wire is cut into slices with the blast injection pressure of 1.8kg to 2.2kg.
Preferably, in the etching method of above-mentioned diamond wire section,
Minitype particle is sprayed on the described surface to diamond wire section：
The minitype particle being 5 μm to 20 μm to the surface sprayed fiber concrete scope of described diamond wire section.
Preferably, in the etching method of above-mentioned diamond wire section,
Minitype particle is sprayed on the described surface to diamond wire section：
To diamond wire section surface injection aluminum oxide minitype particle, carborundum minitype particle, silica minitype particle or
Sodium carbonate minitype particle.
Preferably, in the etching method of above-mentioned diamond wire section,
The described surface in the section of described diamond wire is prepared suede structure using sour process for etching and is included：
The surface corrosion described diamond wire cut into slices using hydrofluoric acid nitric acid system, forms etch pit；
Acid solution using deionized water cleaning residual；
Alkali cleaning removes porous silicon, and the alkali lye of residual is removed in washing；
Remove metal impurities using hydrofluoride acid system and form surface hydrophobic layer；
Remove remained on surface acid solution using water, and drying described diamond wire section.
Preferably, in the etching method of above-mentioned diamond wire section,
It is to be cut into slices with the described diamond wire of velocity interval movement of 3.0mm/s to 5.0mm/s that described mobile diamond wire is cut into slices.
By foregoing description, the etching method of the above-mentioned diamond wire section that the present invention provides, due to including：To Buddha's warrior attendant
The surface injection minitype particle of line section, forms coarse surface, provides reaction activation point for making herbs into wool；In the section of described diamond wire
Surface prepare suede structure using sour process for etching, therefore, it is possible to avoid to processing procedure introduce impurity and to environment introduce pollution,
And reduce making herbs into wool cost.
Brief description
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
Have technology description in required use accompanying drawing be briefly described it should be apparent that, drawings in the following description be only this
Inventive embodiment, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
The accompanying drawing providing obtains other accompanying drawings.
The schematic diagram of the etching method of the first diamond wire section that Fig. 1 provides for the embodiment of the present application.
Specific embodiment
The core concept of the present invention is to provide a kind of etching method of diamond wire section, it can be avoided that introduce miscellaneous to processing procedure
Matter and to environment introduce pollution, and reduce making herbs into wool cost.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation description is it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of not making creative work
Embodiment, broadly falls into the scope of protection of the invention.
The etching method of the first diamond wire section that the embodiment of the present application provides is as shown in figure 1, Fig. 1 is implemented for the application
The schematic diagram of the etching method of the first diamond wire section that example provides, the method comprises the steps：
S1：To the surface injection minitype particle of diamond wire section, form coarse surface, provide reaction activation for making herbs into wool
Point；
It should be noted that Buddha's warrior attendant wire cutting has semipolish effect, the damage layer of the slice surface obtaining is few, silicon chip table
Face is smooth, therefore cannot obtain uniformly and effectively suede structure, and can only carry out making herbs into wool using RIE and MCT technology, but cost
Higher, and pollute environment, and the embodiment of the present application using injection minitype particle by the way of to form coarse surface, will not bring
Any environmental pollution, also will not be introduced impurity to silicon chip, and constantly be impacted the surface of diamond wire section by minitype particle, make
Surface becomes coarse, just beneficial to making herbs into wool.
S2：Prepare suede structure on the surface of described diamond wire section using sour process for etching.
It should be noted that defining reaction activation point just because of previous step, RIE and MCT skill therefore need not be adopted
Art, but using conventional sour process for etching it becomes possible to prepare suede structure on the surface of diamond wire section, this Technical comparing
Maturation, and low cost.
By foregoing description, the etching method of above-mentioned the first diamond wire section that the embodiment of the present application provides, by
In including the surface injection minitype particle to diamond wire section, form coarse surface, provide reaction activation point for making herbs into wool；Institute
Suede structure is prepared using sour process for etching in the surface stating diamond wire section, therefore, it is possible to avoid processing procedure being introduced with impurity and to ring
Border introduces pollution, and reduces making herbs into wool cost.
The etching method of the second diamond wire section that the embodiment of the present application provides, is in the first diamond wire above-mentioned section
Etching method on the basis of, also include following technical characteristic：
Minitype particle is sprayed on the described surface to diamond wire section：
Injecting-unit is fixed, movement described diamond wire section, until all surfaces of described diamond wire section have sprayed
Finish.
That is, injecting-unit maintains static, silicon chip transverse shifting, translational speed is consistent with etching device, directly
Form matsurface to by all surfaces of whole diamond wire section, be easy to carry out making herbs into wool using common process.
The etching method of the third diamond wire section that the embodiment of the present application provides, is in the section of above-mentioned second diamond wire
Etching method on the basis of, also include following technical characteristic：
Minitype particle is sprayed on the described surface to diamond wire section：
Minitype particle is sprayed to the surface that described diamond wire is cut into slices with the blast injection pressure of 1.8kg to 2.2kg.
It should be noted that being sprayed using this preferred pressure limit, both will not diamond wire section be caused to damage
Wound, ensure that surface has enough roughness again, facilitates making herbs into wool.
The etching method of the 4th kind of diamond wire section that the embodiment of the present application provides, is in the third diamond wire above-mentioned section
Etching method on the basis of, also include following technical characteristic：
Minitype particle is sprayed on the described surface to diamond wire section：
The minitype particle being 5 μm to 20 μm to the surface sprayed fiber concrete scope of described diamond wire section.
The minitype particle of this size range can impact out hole deep enough on the surface of diamond wire section, and after one
It is ensured that the distributing homogeneity in hole after the section time, on the whole, become a coarse surface it becomes possible to provide
The activation point of making herbs into wool, is easy to carry out making herbs into wool using traditional handicraft.
The etching method of the 5th kind of diamond wire section that the embodiment of the present application provides, is in above-mentioned 4th kind of diamond wire section
Etching method on the basis of, also include following technical characteristic：
Minitype particle is sprayed on the described surface to diamond wire section：
To diamond wire section surface injection aluminum oxide minitype particle, carborundum minitype particle, silica minitype particle or
Sodium carbonate minitype particle.
It should be noted that the particle of these species be respectively provided with sufficiently high intensity and rigidity it is ensured that injection after in Buddha's warrior attendant
Line slice surface goes out the high efficiency in hole, and it is relatively low to obtain cost.
The etching method of the 6th kind of diamond wire section that the embodiment of the present application provides, be above-mentioned the first to the 5th kind of gold
In the etching method of just line section on the basis of any one, also include following technical characteristic：
The described surface in the section of described diamond wire is prepared suede structure using sour process for etching and is included：
The surface corrosion described diamond wire cut into slices using hydrofluoric acid nitric acid system, forms etch pit, these etch pits pair
Light has reflecting effect, increased the probability of light double absorption, reduces reflectivity；
Acid solution using deionized water cleaning residual；
Alkali cleaning removes porous silicon, facilitates subsequent technique growth plated film, and the alkali lye of residual is removed in washing；
Remove metal impurities using hydrofluoride acid system and form surface hydrophobic layer, protect silicon chip surface, completely cut off steam
Impact；
Remove remained on surface acid solution using water, and drying described diamond wire section.
These steps above-mentioned are all traditional processing steps, using lower-cost reagent, realize efficient making herbs into wool.
The etching method of the 7th kind of diamond wire section that the embodiment of the present application provides, is in the section of above-mentioned second diamond wire
Etching method on the basis of, also include following technical characteristic：
It is to be cut into slices with the described diamond wire of velocity interval movement of 3.0mm/s to 5.0mm/s that described mobile diamond wire is cut into slices.
It should be noted that this velocity interval is the data mated with producing line roller process for etching, it is easy to producing line volume production
Change is processed.
Described above to the disclosed embodiments, makes professional and technical personnel in the field be capable of or uses the present invention.
Multiple modifications to these embodiments will be apparent from for those skilled in the art, as defined herein
General Principle can be realized without departing from the spirit or scope of the present invention in other embodiments.Therefore, the present invention
It is not intended to be limited to the embodiments shown herein, and be to fit to and principles disclosed herein and features of novelty phase one
The scope the widest causing.
Claims (7)
1. a kind of etching method of diamond wire section is it is characterised in that include：
To the surface injection minitype particle of diamond wire section, form coarse surface, provide reaction activation point for making herbs into wool；
Prepare suede structure on the surface of described diamond wire section using sour process for etching.
2. diamond wire according to claim 1 section etching method it is characterised in that
Minitype particle is sprayed on the described surface to diamond wire section：
Injecting-unit is fixed, movement described diamond wire section, until all surfaces injection of described diamond wire section finishes.
3. diamond wire according to claim 2 section etching method it is characterised in that
Minitype particle is sprayed on the described surface to diamond wire section：
Minitype particle is sprayed to the surface that described diamond wire is cut into slices with the blast injection pressure of 1.8kg to 2.2kg.
4. diamond wire according to claim 3 section etching method it is characterised in that
Minitype particle is sprayed on the described surface to diamond wire section：
The minitype particle being 5 μm to 20 μm to the surface sprayed fiber concrete scope of described diamond wire section.
5. diamond wire according to claim 4 section etching method it is characterised in that
Minitype particle is sprayed on the described surface to diamond wire section：
Aluminum oxide minitype particle, carborundum minitype particle, silica minitype particle or carbonic acid are sprayed in surface to diamond wire section
Sodium minitype particle.
6. according to any one of claim 1-5 diamond wire section etching method it is characterised in that
The described surface in the section of described diamond wire is prepared suede structure using sour process for etching and is included：
The surface corrosion described diamond wire cut into slices using hydrofluoric acid nitric acid system, forms etch pit；
Acid solution using deionized water cleaning residual；
Alkali cleaning removes porous silicon, and the alkali lye of residual is removed in washing；
Remove metal impurities using hydrofluoride acid system and form surface hydrophobic layer；
Remove remained on surface acid solution using water, and drying described diamond wire section.
7. diamond wire according to claim 2 section etching method it is characterised in that
It is to be cut into slices with the described diamond wire of velocity interval movement of 3.0mm/s to 5.0mm/s that described mobile diamond wire is cut into slices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611085272.1A CN106409983A (en) | 2016-11-30 | 2016-11-30 | Diamond wire slice texturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611085272.1A CN106409983A (en) | 2016-11-30 | 2016-11-30 | Diamond wire slice texturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106409983A true CN106409983A (en) | 2017-02-15 |
Family
ID=58083911
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611085272.1A Pending CN106409983A (en) | 2016-11-30 | 2016-11-30 | Diamond wire slice texturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106409983A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107623053A (en) * | 2017-09-11 | 2018-01-23 | 中节能太阳能科技（镇江）有限公司 | Diamond wire silicon chip based on chain-type texture-etching equipment receives micro- matte preparation method |
| CN109888030A (en) * | 2019-03-04 | 2019-06-14 | 常州时创能源科技有限公司 | The preparation method of surface of crystalline silicon class inverted pyramid suede structure |
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| CN103361738A (en) * | 2012-03-29 | 2013-10-23 | 无锡尚德太阳能电力有限公司 | Polycrystalline silicon solar battery and solar battery polycrystalline silicon slice flocking method |
| CN105932078A (en) * | 2016-01-15 | 2016-09-07 | 北京创世捷能机器人有限公司 | Texturing method of polycrystalline silicon wafer cut by diamond wire |
| CN106005886A (en) * | 2016-07-11 | 2016-10-12 | 北京创世捷能机器人有限公司 | Silicon wafer conveying device for silicon wafer sand blasting machine |
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2016
- 2016-11-30 CN CN201611085272.1A patent/CN106409983A/en active Pending
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|---|---|---|---|---|
| CN103339738A (en) * | 2011-01-31 | 2013-10-02 | 株式会社不二制作所 | Method for fabricating substrate for solar cell and solar cell |
| CN103361738A (en) * | 2012-03-29 | 2013-10-23 | 无锡尚德太阳能电力有限公司 | Polycrystalline silicon solar battery and solar battery polycrystalline silicon slice flocking method |
| CN102832291A (en) * | 2012-08-16 | 2012-12-19 | 常州天合光能有限公司 | Felting method of solar cell |
| CN105932078A (en) * | 2016-01-15 | 2016-09-07 | 北京创世捷能机器人有限公司 | Texturing method of polycrystalline silicon wafer cut by diamond wire |
| CN106005886A (en) * | 2016-07-11 | 2016-10-12 | 北京创世捷能机器人有限公司 | Silicon wafer conveying device for silicon wafer sand blasting machine |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107623053A (en) * | 2017-09-11 | 2018-01-23 | 中节能太阳能科技（镇江）有限公司 | Diamond wire silicon chip based on chain-type texture-etching equipment receives micro- matte preparation method |
| CN109888030A (en) * | 2019-03-04 | 2019-06-14 | 常州时创能源科技有限公司 | The preparation method of surface of crystalline silicon class inverted pyramid suede structure |
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Application publication date: 20170215 |