CN107887458A - A kind of method that copper catalysis etching silicon prepares morphology controllable matte - Google Patents
A kind of method that copper catalysis etching silicon prepares morphology controllable matte Download PDFInfo
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- CN107887458A CN107887458A CN201710939709.1A CN201710939709A CN107887458A CN 107887458 A CN107887458 A CN 107887458A CN 201710939709 A CN201710939709 A CN 201710939709A CN 107887458 A CN107887458 A CN 107887458A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 150
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 148
- 239000010703 silicon Substances 0.000 title claims abstract description 148
- 238000005530 etching Methods 0.000 title claims abstract description 97
- 239000010949 copper Substances 0.000 title claims abstract description 49
- 238000000034 method Methods 0.000 title claims abstract description 32
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 238000006555 catalytic reaction Methods 0.000 title claims abstract description 31
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 31
- 238000004140 cleaning Methods 0.000 claims abstract description 66
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 58
- 239000010432 diamond Substances 0.000 claims abstract description 58
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 31
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000008367 deionised water Substances 0.000 claims abstract description 30
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 30
- 239000007788 liquid Substances 0.000 claims abstract description 24
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 16
- 239000000203 mixture Substances 0.000 claims abstract description 10
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 6
- 150000001879 copper Chemical class 0.000 claims abstract description 6
- 239000007800 oxidant agent Substances 0.000 claims abstract description 6
- 230000001590 oxidative effect Effects 0.000 claims abstract description 6
- 238000003486 chemical etching Methods 0.000 claims abstract description 5
- 238000006243 chemical reaction Methods 0.000 claims abstract description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 43
- 229920005591 polysilicon Polymers 0.000 claims description 42
- 238000009940 knitting Methods 0.000 claims description 26
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 26
- 239000002362 mulch Substances 0.000 claims description 15
- 229910017604 nitric acid Inorganic materials 0.000 claims description 10
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 9
- 229910021578 Iron(III) chloride Inorganic materials 0.000 claims description 8
- 229910000366 copper(II) sulfate Inorganic materials 0.000 claims description 7
- 229910021592 Copper(II) chloride Inorganic materials 0.000 claims description 5
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 5
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 5
- PXLIDIMHPNPGMH-UHFFFAOYSA-N sodium chromate Chemical compound [Na+].[Na+].[O-][Cr]([O-])(=O)=O PXLIDIMHPNPGMH-UHFFFAOYSA-N 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 229910021591 Copper(I) chloride Inorganic materials 0.000 claims description 2
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 claims description 2
- 238000007654 immersion Methods 0.000 claims 1
- 235000008216 herbs Nutrition 0.000 abstract description 15
- 210000002268 wool Anatomy 0.000 abstract description 15
- 239000002253 acid Substances 0.000 abstract description 7
- 239000000470 constituent Substances 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 abstract 1
- 238000005520 cutting process Methods 0.000 description 52
- 239000000243 solution Substances 0.000 description 43
- 239000011259 mixed solution Substances 0.000 description 12
- 239000002994 raw material Substances 0.000 description 12
- 230000002000 scavenging effect Effects 0.000 description 11
- 239000004570 mortar (masonry) Substances 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 230000003628 erosive effect Effects 0.000 description 7
- 238000002604 ultrasonography Methods 0.000 description 5
- 239000003513 alkali Substances 0.000 description 3
- 239000010436 fluorite Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Nanotechnology (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses the method that a kind of copper catalysis etching silicon prepares morphology controllable matte,The silicon chip after diamond wire saw is subjected to cleaning pretreatment first,Then the silicon chip after processing is put into containing copper salt,In the etching liquid of oxidant and etching agent,Carry out copper catalysis chemical etching reaction,Pass through the composition for controlling etching liquid and each constituent concentration,So as to prepare the matte of different-shape in silicon chip surface,Then salpeter solution is used successively again,Silicon chip after hydrofluoric acid solution and deionized water etching,Complete the preparation of the different matte of pattern,The problem of causing covered with amorphous silicon layer and a large amount of parallel strias conventional acid etching to be difficult to the effective making herbs into wool in surface present invention is generally directed to diamond wire saw silicon chip surface,The invention has the advantages that it can realize that low cost to diamond wire saw silicon chip surface prepare the matte of morphology controllable.
Description
Technical field
The invention belongs to surface of crystalline silicon making herbs into wool technical field in solar cell industry, and in particular to a kind of copper catalysis is carved
The method that erosion silicon prepares morphology controllable matte.
Background technology
At present, polysilicon chip, monocrystalline silicon piece cutting use mortar multi-wire cutting technology mostly used in silicon solar cell, should
Technology is to drive the silicon-carbide particle in mortar to roll grinding to realize the cutting of silicon chip by the steel wire of high-speed motion, the technology
Exist slice efficiency is low, need chemical coolant, unit mass number of sections is few, silicon carbide abrasive is expensive and cutting caused by it is big
Amount silica flour is difficult to the problems such as separation and recovery utilizes and causes industry to novel dicing technology full of expectation.
New diamond wire saw technology is that diamond is fixed on steel wire, passes through Buddha's warrior attendant in high speed motions
The scraping cutting silicon chip of stone point sword compares common mortar cutting technique, and diamond fretsaw cutting technique has advantages below：（1）
2~3 times faster than mortar wire cutting of diamond wire saw silicon chip speed；（2）Diamond wire saw technology uses water base coolant,
Added without mortars such as carborundum, high-purity silicon powder recovery is easy caused by cutting, and the influence to environment is smaller；（3）Diamond wire
The otch of cutting is smaller, thus unit mass number of sections is more compared with mortar cutting.Therefore, diamond wire saw technology not only can be with
Improve silicon to split the production efficiency of section enterprise, reduce production cost, it is while significant to environmental protection.
In the conventional production process of silicon solar cell, mortar wire cutting silicon chip carries out the wet method of alkali formula/acid first
Chemical process for etching, it is therefore an objective to remove caused damaging layer in cutting process, while there is light trapping effect in silicon chip surface formation
Pyramid shape or pit shape suede structure.Generally, monocrystalline silicon piece is etched using anisotropic KOH alkali lye system so as to obtain
There must be the antireflection structure of pyramid matte, use isotropic HNO3/ HF acid fluid system etches polycrystalline silicon chips are had
There is the antireflection structure of pit shape matte, it is etched generally opens from damaging layer particularly micro-crack and fault location caused by silicon chip cutting
Begin.Due to the difference of cutting mechanism, gather parallel stria for the surface of diamond wire saw silicon chip, while Surface mulch has one layer
Amorphous silicon layer caused by cutting.Therefore, the damage layer thickness on diamond wire saw silicon chip top layer and defect are compared with mortar wire cutting silicon
Piece will lack, and result in current process for etching and be no longer applicable to varying degrees, be embodied in stria and be difficult to be completely eliminated, with
And the hole shape matte that etching is formed is shallower, thus the problem of the more conventional mortar wire cutting silicon chip of making herbs into wool back reflection rate is high.At present, it is golden
Hard rock wire cutting monocrystalline silicon piece is basic in the alkali lye system of optimization to solve the problems, such as making herbs into wool, but still more or less existing line
Trace.However, diamond wire saw polysilicon chip is difficult in original HF/HNO3Solution is optimized in acid fluid system, causes this
New slice process is still unable to large-scale application in polycrystal silicon cell producing line.
The content of the invention
It is an object of the invention to provide the method that a kind of copper catalysis etching silicon prepares morphology controllable matte, the present invention are main
It is the concentration by controlling and allocating etching liquid, the different matte of pattern is prepared on silicon wafer cut by diamond wire, this method is removed
It is outer that cleaning pretreatment is carried out to silicon chip, without handling other surfaces, the making herbs into wool for solving diamond wire saw silicon chip is difficult
Topic.
Technical scheme is as follows：The silicon chip after diamond wire saw is subjected to cleaning pretreatment first, then will
Silicon chip after processing is put into the etching liquid containing copper salt, oxidant and etching agent, carries out copper catalysis chemical etching reaction,
By the composition for controlling etching liquid and each constituent concentration, so as to prepare the matte of different-shape, Ran Houzai in silicon chip surface
The silicon chip after salpeter solution, hydrofluoric acid solution and deionized water etching is used successively, i.e., it is different pattern to be made in silicon face
Matte.
A kind of method that copper catalysis etching silicon prepares morphology controllable matte, concrete operations are as follows：
（1）Silicon chip after diamond wire saw is subjected to cleaning pretreatment, i.e., first surpassed the silicon chip after diamond wire saw
Sound cleans, and is then placed in the HF solution that mass concentration is 1~10% and soaks 60~1800s, is finally surpassed again with deionized water
Sound cleans；
（2）By step（1）Pretreated silicon chip is put into the etching liquid containing copper salt, oxidant and etching agent, is carried out
Copper catalysis chemical etching reacts, and the temperature of etching reaction is 15~95 DEG C, and etch period is 5~600min, wherein copper salt
For Cu (NO3)2、CuCl2、CuSO4In one kind, oxidant H2O2、HNO3、H2CrO4、FeCl3One kind in solution, etching agent
For HF, wherein the etching liquid of positive pyramid structure is HF-Cu (NO3)2-FeCl3Or HF-Cu (NO3)2-H2CrO4, and etching liquid
In the concentration of each composition be HF 0.1 ~ 10 mol/L, Cu (NO3)20.001 ~ 0.2 mol/L, FeCl3Or H2CrO4 0.01~2
Mol/L, the etching liquid of inverted pyramid structure is HF-Cu (NO3)2-H2O2, and in etching liquid each composition concentration for HF 0.1 ~
10 mol/L, Cu (NO3)20.01 ~ 0.4 mol/L, H2O20.5 ~ 5.0 mol/L, the etching liquid of vermiform knitting surface texture
For HF-CuCl2-H2O2, and the concentration of each composition is HF 0.1 ~ 10 mol/L, CuCl in etching liquid2 0.01~5mol/L,
H2O2 0.2 ~ 5.0mol/L, the etching liquid of pit type knitting surface texture are：HF-CuSO4-H2O2, and each composition in etching liquid
Concentration is HF 0.1 ~ 10mol/L, CuSO4 0.01 ~ 5 mol/L, H2O2 0.1~5.0 mol/L；
（3）The silicon chip after salpeter solution, hydrofluoric acid solution and deionized water etching is used successively, and it is residual to remove silicon chip surface respectively
Metallic, oxide layer and the chemical residual stayed, i.e., the different matte of pattern, the wherein mass concentration of nitric acid is made in silicon face
For 5~68%, the time of nitric acid cleaning be 1~30min, and cleaning temperature is 15~90 DEG C, and wherein the mass concentration of hydrofluoric acid is 1
~10%, the time of nitric acid cleaning is 1~30min, and cleaning temperature is 15~90 DEG C.
The silicon chip is monocrystalline silicon piece or polysilicon chip.
The amorphous silicon layer thickness of silicon chip Surface mulch after the diamond wire saw is 1~100nm, the line of silicon chip surface
Trace is highly 1~10 μm.
Advantages of the present invention and technique effect：
1st, the present invention by using metal copper nano granules as catalytic species, compared to other noble metal species（Silver, platinum, palladium
Deng）The etching to silicon chip is realized in catalysis, has the advantages of cost is low, simple to operate.
2nd, the present invention can be realized to the polysilicon chip or monocrystalline silicon after Buddha's warrior attendant wire cutting by choosing suitable etching liquid
The controllable making herbs into wool of piece surface difference nanostructured（Positive pyramid, inverted pyramid, vermiform, pit shape）, reducing surface line marker
While, it is effectively reduced surface light reflectance.
Brief description of the drawings
Fig. 1 is SEM phenograms after Buddha's warrior attendant wire cutting polysilicon surface inverted pyramid structure making herbs into wool of the invention；
Fig. 2 is SEM phenograms after Buddha's warrior attendant wire cutting monocrystalline silicon surface inverted pyramid structure making herbs into wool of the invention；
Fig. 3 is SEM phenograms after Buddha's warrior attendant wire cutting polysilicon surface vermicular texture making herbs into wool of the invention；
Fig. 4 is SEM phenograms after Buddha's warrior attendant wire cutting monocrystalline silicon surface pit shape structure making herbs into wool of the invention；
Fig. 5 is SEM phenograms after the positive pyramid structure making herbs into wool of Buddha's warrior attendant wire cutting polysilicon surface of the invention.
Embodiment
The present invention is described in further detail below by drawings and examples, but the scope of the present invention is not limited to
The content.
Embodiment 1：The method that copper catalysis etching silicon prepares inverted pyramid structure matte, concrete operations are as follows：
Using the polysilicon chip of Buddha's warrior attendant wire cutting as raw material, and the amorphous silicon layer of the polysilicon chip Surface mulch of the diamond wire saw
Thickness is 1nm, and the stria of silicon chip surface is highly 1 μm, and polysilicon chip is carried out into pretreatment cleaning first, i.e., cut diamond wire
The polysilicon chip cut, which is put into the HF solution that mass concentration is 1%, soaks 1800s, then carries out ultrasound clearly with deionized water again
Wash, the diamond wire saw silicon chip after cleaning is put into containing Cu (NO3)2、H2O2With progress surface quarter in HF mixed solution
Erosion, its concentration are respectively：0.01mol/L, 0.5 mol/L, 10 mol/L, etching temperature are 23 DEG C, etch period 600min,
Mass concentration is used to clean 30min to it for 5% salpeter solution after etching, cleaning temperature is 35 DEG C, afterwards using quality
The hydrofluoric acid solution that concentration is 1% cleans to silicon chip, scavenging period 10min, and cleaning temperature is 25 DEG C, deionized water
Silicon chip can obtain the silicon chip of knitting of inverted pyramid structure after etching, and silicon chip average reflectance is 8.3%.
Fig. 1 shows the SEM phenograms after the present embodiment Buddha's warrior attendant wire cutting polysilicon surface inverted pyramid structure making herbs into wool, by
Figure finds out that matte is inverted pyramid structure.
Embodiment 2：The method that copper catalysis etching silicon prepares inverted pyramid structure matte, concrete operations are as follows：
Using the polysilicon chip of Buddha's warrior attendant wire cutting as raw material, and the amorphous silicon layer of the polysilicon chip Surface mulch of the diamond wire saw
Thickness is 50nm, and the stria of silicon chip surface is highly 5 μm, polysilicon chip is carried out into pretreatment cleaning first, i.e., by diamond wire
The polysilicon chip of cutting, which is put into the HF solution that mass concentration is 5%, soaks 1000s, then carries out ultrasound clearly with deionized water again
Wash, the diamond wire saw silicon chip after cleaning is put into containing Cu (NO3)2、H2O2With progress surface quarter in HF mixed solution
Erosion, its concentration are respectively：0.4 mol/L, 3mol/L, 5mol/L, etching temperature are 95 DEG C, etch period 10min, after etching
Mass concentration is used to clean 30min to it for 5% salpeter solution, cleaning temperature is 25 DEG C, afterwards using quality mass concentration
Silicon chip is cleaned for 1% hydrofluoric acid solution, scavenging period 10min, cleaning temperature is 25 DEG C, deionized water cleaning
Silicon chip can obtain the silicon chip of knitting of inverted pyramid structure after etching, and silicon chip average reflectance is 7.3%.
Embodiment 3：The method that copper catalysis etching silicon prepares inverted pyramid structure matte, concrete operations are as follows：
Using the monocrystalline silicon piece of Buddha's warrior attendant wire cutting as raw material, and the amorphous silicon layer of the monocrystalline silicon piece Surface mulch of the diamond wire saw
Thickness is 100nm, and the stria of silicon chip surface is highly 10 μm, monocrystalline silicon piece is carried out into pretreatment cleaning first, i.e., by diamond
The monocrystalline silicon piece of wire cutting, which is put into the HF solution that mass concentration is 10%, soaks 60s, then carries out ultrasound with deionized water again
Cleaning, the diamond wire saw silicon chip after cleaning is put into containing Cu (NO3)2、H2O2With progress surface quarter in HF mixed solution
Erosion, its concentration are respectively：0.2 mol/L, 5mol/L, 0.1mol/L, etching temperature are 50 DEG C, etch period 200min, are carved
Mass concentration is used to clean 10min to it for 1% salpeter solution after erosion, cleaning temperature is 25 DEG C, afterwards using quality quality
The hydrofluoric acid solution that concentration is 1% cleans to silicon chip, scavenging period 10min, and cleaning temperature is 25 DEG C, deionized water
Silicon chip can obtain the silicon chip of knitting of inverted pyramid structure after etching, and silicon chip average reflectance is 7.7%.
SEM is characterized after Fig. 2 shows the Buddha's warrior attendant wire cutting monocrystalline silicon surface inverted pyramid structure making herbs into wool of the present embodiment, in silicon
Piece surface is successfully prepared the matte of inverted pyramid structure.
Embodiment 4：The method that copper catalysis etching silicon prepares the matte of knitting of vermicular texture, concrete operations are as follows：
Using the polysilicon chip of Buddha's warrior attendant wire cutting as raw material, and the amorphous silicon layer of the polysilicon chip Surface mulch of the diamond wire saw
Thickness is 50nm, and the stria of silicon chip surface is highly 5 μm, polysilicon chip is carried out into pretreatment cleaning first, i.e., by diamond wire
The polysilicon chip of cutting, which is put into the HF solution that mass concentration is 10%, soaks 60s, then carries out ultrasound clearly with deionized water again
Wash, by the diamond wire saw silicon chip after cleaning be put into containing
CuCl2、H2O2With surface etch is carried out in HF mixed solution, its concentration is respectively：0.01 mol/L, 5 mol/L, 5.6
Mol/L, etching temperature are 50 DEG C, etch period 30min, use mass concentration clear to its for 25% salpeter solution after etching
Wash 10min, cleaning temperature is 15 DEG C, uses mass concentration to be cleaned for 5% hydrofluoric acid solution to silicon chip afterwards, during cleaning
Between be 5min, cleaning temperature is 45 DEG C, and silicon chip can obtain the silicon chip of knitting of vermicular texture, silicon after deionized water etching
Piece average reflectance is 9.4%.
Fig. 3 shows SEM phenograms after the Buddha's warrior attendant wire cutting polysilicon surface vermicular texture making herbs into wool of the present embodiment, by scheming
Find out, the structure of matte is vermiform.
Embodiment 5：The method that copper catalysis etching silicon prepares the matte of knitting of vermicular texture, concrete operations are as follows：
Using the monocrystalline silicon piece of Buddha's warrior attendant wire cutting as raw material, and the amorphous silicon layer of the monocrystalline silicon piece Surface mulch of the diamond wire saw
Thickness is 30nm, and the stria of silicon chip surface is highly 3 μm, monocrystalline silicon piece is carried out into pretreatment cleaning first, i.e., by diamond wire
The monocrystalline silicon piece of cutting, which is put into the HF solution that mass concentration is 10%, soaks 60s, then carries out ultrasound clearly with deionized water again
Wash, the diamond wire saw silicon chip after cleaning is put into containing CuCl2、H2O2With surface etch is carried out in HF mixed solution, its
Concentration is respectively：0.5mol/L, 0.2mol/L, 10mol/L, etching temperature are 15 DEG C, etch period 600min, are adopted after etching
10min is cleaned to it with the salpeter solution that mass concentration is 25%, cleaning temperature is 40 DEG C, uses mass concentration afterwards as 10%
Hydrofluoric acid solution silicon chip is cleaned, scavenging period 5min, cleaning temperature is 60 DEG C, silicon after deionized water etching
Piece can obtain the silicon chip of knitting of vermicular texture, and silicon chip average reflectance is 8.9%.
Embodiment 6：The method that copper catalysis etching silicon prepares the matte of knitting of vermicular texture, concrete operations are as follows：
Using the monocrystalline silicon piece of Buddha's warrior attendant wire cutting as raw material, and the amorphous silicon layer of the monocrystalline silicon piece Surface mulch of the diamond wire saw
Thickness is 20nm, and the stria of silicon chip surface is highly 2 μm, monocrystalline silicon piece is carried out into pretreatment cleaning first, i.e., by diamond wire
The monocrystalline silicon piece of cutting, which is put into the HF solution of mass concentration 10%, soaks 60s, is then cleaned by ultrasonic again with deionized water,
Diamond wire saw silicon chip after cleaning is put into containing CuCl2、H2O2With surface etch is carried out in HF mixed solution, its is dense
Degree is respectively：5mol/L, 0.3mol/L, 0.1mol/L, etching temperature are 95 DEG C, etch period 5min, and matter is used after etching
The salpeter solution that amount concentration is 25% cleans 10min to it, and cleaning temperature is 40 DEG C, use afterwards mass concentration for 10% hydrogen
Fluorspar acid solution cleans to silicon chip, scavenging period 1min, and cleaning temperature is 15 DEG C, and silicon chip is after deionized water etching
The silicon chip of knitting of vermicular texture can be obtained, silicon chip average reflectance is 8.5%.
Embodiment 7：The method that copper catalysis etching silicon prepares the matte of pit shape knitting of structure, concrete operations are as follows：
Using the polysilicon chip of Buddha's warrior attendant wire cutting as raw material, and the amorphous silicon layer of the polysilicon chip Surface mulch of the diamond wire saw
Thickness is 50nm, and the stria of silicon chip surface is highly 5 μm, polysilicon chip is carried out into pretreatment cleaning first, i.e., by diamond wire
The polysilicon chip of cutting, which is put into the HF solution of mass concentration 5%, soaks 1200s, is then cleaned by ultrasonic again with deionized water,
Diamond wire saw silicon chip after cleaning is put into containing CuSO4、H2O2With surface etch is carried out in HF mixed solution, its is dense
Degree is respectively：5.0 mol/L, 2.0 mol/L, 5mol/L, etching temperature are 90 DEG C, etch period 10min, are used after etching
The salpeter solution that mass concentration is 68% cleans 1min to it, and cleaning temperature is 90 DEG C, use afterwards mass concentration for 5% hydrogen
Fluorspar acid solution cleans to silicon chip, scavenging period 5min, and cleaning temperature is 90 DEG C, silicon chip after deionized water etching
The silicon chip of pit shape knitting of structure can be obtained, silicon chip average reflectance is 6.7%.
Embodiment 8：The method that copper catalysis etching silicon prepares the matte of pit shape knitting of structure, concrete operations are as follows：
Using the polysilicon chip of Buddha's warrior attendant wire cutting as raw material, and the amorphous silicon layer of the polysilicon chip Surface mulch of the diamond wire saw
Thickness is 50nm, and the stria of silicon chip surface is highly 5 μm, polysilicon chip is carried out into pretreatment cleaning first, i.e., by diamond wire
The polysilicon chip of cutting, which is put into the HF solution of mass concentration 5%, soaks 1200s, is then cleaned by ultrasonic again with deionized water,
Diamond wire saw silicon chip after cleaning is put into containing CuSO4、H2O2With surface etch is carried out in HF mixed solution, its is dense
Degree is respectively：0.01mol/L, 5.0mol/L, 0.1mol/L, etching temperature are 90 DEG C, etch period 10min, are adopted after etching
10min is cleaned to it with the salpeter solution that mass concentration is 68%, cleaning temperature is 20 DEG C, uses mass concentration afterwards as 5%
Hydrofluoric acid solution cleans to silicon chip, scavenging period 5min, and cleaning temperature is 45 DEG C, silicon after deionized water etching
Piece can obtain the silicon chip of pit shape knitting of structure, and silicon chip average reflectance is 9.1%.
Embodiment 9：The method that copper catalysis etching silicon prepares the matte of pit shape knitting of structure, concrete operations are as follows：
Using the monocrystalline silicon piece of Buddha's warrior attendant wire cutting as raw material, and the amorphous silicon layer of the monocrystalline silicon piece Surface mulch of the diamond wire saw
Thickness is 40nm, and the stria of silicon chip surface is highly 5 μm, monocrystalline silicon piece is carried out into pretreatment cleaning first, i.e., by diamond wire
The monocrystalline silicon piece of cutting, which is put into the HF solution of mass concentration 8%, soaks 800s, is then cleaned by ultrasonic again with deionized water,
Diamond wire saw silicon chip after cleaning is put into containing CuSO4、H2O2With surface etch is carried out in HF mixed solution, its is dense
Degree is respectively：2mol/L, 0.1mol/L, 10mol/L, etching temperature are 95 DEG C, etch period 5min, and quality is used after etching
The salpeter solution that concentration is 25% cleans 10min to it, and cleaning temperature is 90 DEG C, use afterwards mass concentration for 5% hydrofluoric acid
Solution cleans to silicon chip, scavenging period 5min, and cleaning temperature is 90 DEG C, and silicon chip can obtain after deionized water etching
The silicon chip of pit shape knitting of structure is obtained, silicon chip average reflectance is 7.1%.
Fig. 4 is shown as SEM phenograms after the Buddha's warrior attendant wire cutting monocrystalline silicon surface pit shape structure making herbs into wool of the present embodiment, by scheming
The structure for finding out matte is pit shape.
Embodiment 10：The method that copper catalysis etching silicon prepares the matte of positive knitting of pyramid structure, concrete operations are as follows：
Using the polysilicon chip of Buddha's warrior attendant wire cutting as raw material, and the amorphous silicon layer of the polysilicon chip Surface mulch of the diamond wire saw
Thickness is 40nm, and the stria of silicon chip surface is highly 5 μm, polysilicon chip is carried out into pretreatment cleaning first, i.e., by diamond wire
The polysilicon chip of cutting, which is put into the HF solution of mass concentration 6%, soaks 900s, is then cleaned by ultrasonic again with deionized water,
Diamond wire saw silicon chip after cleaning is put into containing Cu (NO3)2、FeCl3With surface etch is carried out in HF mixed solution,
Its concentration is respectively：0.001 mol/L, 0.2 mol/L, 10mol/L, etching temperature are 45 DEG C, etch period 30min, are carved
Mass concentration is used to clean 10min to it for 25% salpeter solution after erosion, cleaning temperature is 20 DEG C, afterwards using mass concentration
Silicon chip is cleaned for 5% hydrofluoric acid solution, scavenging period 5min, cleaning temperature is 45 DEG C, and deionized water cleaning is carved
Silicon chip can obtain the silicon chip of positive knitting of pyramid structure after erosion, and silicon chip average reflectance is 9.4%.
Fig. 5 shows the SEM phenograms of the matte of positive knitting of pyramid structure prepared by the silicon chip surface of the present embodiment.
Embodiment 11：The method that copper catalysis etching silicon prepares the matte of positive knitting of pyramid structure, concrete operations are as follows：
Using the polysilicon chip of Buddha's warrior attendant wire cutting as raw material, and the amorphous silicon layer of the polysilicon chip Surface mulch of the diamond wire saw
Thickness is 40nm, and the stria of silicon chip surface is highly 5 μm, polysilicon chip is carried out into pretreatment cleaning first, i.e., by diamond wire
The polysilicon chip of cutting, which is put into the HF solution of mass concentration 6%, soaks 900s, is then cleaned by ultrasonic again with deionized water,
Diamond wire saw silicon chip after cleaning is put into containing Cu (NO3)2、FeCl3With surface etch is carried out in HF mixed solution,
Its concentration is respectively：0.2mol/L, 2mol/L, 5mol/L, etching temperature are 95 DEG C, etch period 30min, are used after etching
The salpeter solution that mass concentration is 25% cleans 10min to it, and cleaning temperature is 25 DEG C, use afterwards mass concentration for 5% hydrogen
Fluorspar acid solution cleans to silicon chip, scavenging period 5min, and cleaning temperature is 80 DEG C, silicon chip after deionized water etching
The silicon chip of positive knitting of pyramid structure can be obtained, silicon chip average reflectance is 8.2%.
Embodiment 12：The method that copper catalysis etching silicon prepares the matte of positive knitting of pyramid structure, concrete operations are as follows：
Using the polysilicon chip of Buddha's warrior attendant wire cutting as raw material, and the amorphous silicon layer of the polysilicon chip Surface mulch of the diamond wire saw
Thickness is 40nm, and the stria of silicon chip surface is highly 5 μm, polysilicon chip is carried out into pretreatment cleaning first, i.e., by diamond wire
The polysilicon chip of cutting, which is put into the HF solution of mass concentration 6%, soaks 900s, is then cleaned by ultrasonic again with deionized water,
Diamond wire saw silicon chip after cleaning is put into containing Cu (NO3)2、H2CrO4With surface etch is carried out in HF mixed solution,
Its concentration is respectively：0.1mol/L, 0.01mol/L, 10mol/L, etching temperature are 95 DEG C, etch period 30min, after etching
Mass concentration is used to clean 10min to it for 25% salpeter solution, cleaning temperature is 25 DEG C, uses mass concentration afterwards as 5%
Hydrofluoric acid solution silicon chip is cleaned, scavenging period 5min, cleaning temperature is 80 DEG C, after deionized water etching
Silicon chip can obtain the silicon chip of positive knitting of pyramid structure, and silicon chip average reflectance is 8.0%.
Claims (7)
1. a kind of method that copper catalysis etching silicon prepares morphology controllable matte, it is characterised in that specifically include following steps：
（1）Silicon chip after diamond wire saw is subjected to cleaning pretreatment；
（2）By step（1）Pretreated silicon chip is put into the etching liquid containing copper salt, oxidant and etching agent, is carried out
Copper catalysis chemical etching reacts, and etches the matte of different structure in silicon chip surface, wherein copper salt is Cu (NO3)2、
CuCl2、CuSO4In one kind, oxidant H2O2、HNO3、H2CrO4、FeCl3One kind in solution, etching agent HF, wherein just
The etching liquid of pyramid structure is HF-Cu (NO3)2-FeCl3Or HF-Cu (NO3)2-H2CrO4, and in etching liquid each composition it is dense
Spend for HF 0.1 ~ 10 mol/L, Cu (NO3)20.001 ~ 0.2 mol/L, FeCl3Or H2CrO40.01 ~ 2 mol/L, golden word
The etching liquid of tower structure is HF-Cu (NO3)2-H2O2, and the concentration of each composition is HF 0.1 ~ 10 mol/L, Cu in etching liquid
(NO3)20.01 ~ 0.4 mol/L, H2O20.5 ~ 5.0 mol/L, the etching liquid of vermiform knitting surface texture is HF-CuCl2-
H2O2, and the concentration of each composition is HF 0.1 ~ 10 mol/L, CuCl in etching liquid2 0.01~5mol/L, H2O2 0.2~
5.0mol/L, the etching liquid of pit type knitting surface texture is HF-CuSO4-H2O2, and the concentration of each composition is HF in etching liquid
0.1 ~ 10mol/L, CuSO4 0.01 ~ 5 mol/L, H2O2 0.1~5.0 mol/L；
（3）The silicon chip after salpeter solution, hydrofluoric acid solution and deionized water etching is used successively, and it is residual to remove silicon chip surface respectively
Metallic, oxide layer and the chemical residual stayed, i.e., the different matte of pattern is made in silicon face.
2. the method that copper catalysis etching silicon according to claim 1 prepares morphology controllable matte, it is characterised in that：Step
（1）Silicon chip be monocrystalline silicon piece or polysilicon chip.
3. the method that copper catalysis etching silicon according to claim 1 prepares morphology controllable matte, it is characterised in that：Step
（1）The amorphous silicon layer thickness of silicon chip Surface mulch after middle diamond wire saw silicon chip is 1~100nm, the stria of silicon chip surface
Highly it is 1~10 μm.
4. the method that copper catalysis etching silicon according to claim 1 prepares morphology controllable matte, it is characterised in that：Step
（1）Cleaning pretreatment be by silicon chip after diamond wire saw be put into the HF solution that mass concentration is 1~10% immersion 60~
1800s, then it is cleaned by ultrasonic again with deionized water.
5. the method that copper catalysis etching silicon according to claim 1 prepares morphology controllable matte, it is characterised in that：Step
（2）The temperature of middle copper catalysis chemical etching reaction is 15~95 DEG C, and etch period is 5~600min.
6. the method that copper catalysis etching silicon according to claim 1 prepares morphology controllable matte, it is characterised in that：Step
（3）The mass concentration of middle nitric acid is 5~68%, and the time of nitric acid cleaning is 1~30min, and cleaning temperature is 15~90 DEG C.
7. the method that copper catalysis etching silicon according to claim 1 prepares morphology controllable matte, it is characterised in that：Step
（3）The mass concentration of middle hydrofluoric acid is 1~10%, and the time of nitric acid cleaning is 1~30min, and cleaning temperature is 15~90 DEG C.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109087853A (en) * | 2018-07-03 | 2018-12-25 | 昆明理工大学 | A kind of method of the copper catalysis etching round and smooth processing of making herbs into wool silicon chip surface |
| CN109666972A (en) * | 2018-12-25 | 2019-04-23 | 浙江晶科能源有限公司 | A method of preparing monocrystalline silicon inverted pyramid flannelette |
| CN111394796A (en) * | 2020-03-30 | 2020-07-10 | 苏州晶瑞化学股份有限公司 | Monocrystalline silicon piece texturing agent and method for texturing by using same |
| CN111607399A (en) * | 2020-04-29 | 2020-09-01 | 苏州美法光电科技有限公司 | Preparation method of surface corrosive liquid for silicon wafer regeneration technology |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090007127A (en) * | 2007-07-13 | 2009-01-16 | 주식회사 케이피이 | Method of manufacture of tri-crystalline si solar cell with surfactant and acid texture |
| CN103928542A (en) * | 2014-04-30 | 2014-07-16 | 陕西师范大学 | Silicon solar cell, manufacturing method and device of silicon solar cell and surface structure of silicon solar cell |
| CN204311157U (en) * | 2014-08-06 | 2015-05-06 | 中国科学院物理研究所 | For the silicon chip of solar cell |
| CN104900509A (en) * | 2015-06-04 | 2015-09-09 | 苏州旦能光伏科技有限公司 | Surface treatment method and texturing method for diamond wire cutting silicon wafers |
| CN105543979A (en) * | 2015-12-11 | 2016-05-04 | 奥特斯维能源（太仓）有限公司 | Wet texturizing process for diamond wire sawed polycrystalline silicon wafer under catalysis of metal |
-
2017
- 2017-10-11 CN CN201710939709.1A patent/CN107887458A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090007127A (en) * | 2007-07-13 | 2009-01-16 | 주식회사 케이피이 | Method of manufacture of tri-crystalline si solar cell with surfactant and acid texture |
| CN103928542A (en) * | 2014-04-30 | 2014-07-16 | 陕西师范大学 | Silicon solar cell, manufacturing method and device of silicon solar cell and surface structure of silicon solar cell |
| CN204311157U (en) * | 2014-08-06 | 2015-05-06 | 中国科学院物理研究所 | For the silicon chip of solar cell |
| CN104900509A (en) * | 2015-06-04 | 2015-09-09 | 苏州旦能光伏科技有限公司 | Surface treatment method and texturing method for diamond wire cutting silicon wafers |
| CN105543979A (en) * | 2015-12-11 | 2016-05-04 | 奥特斯维能源（太仓）有限公司 | Wet texturizing process for diamond wire sawed polycrystalline silicon wafer under catalysis of metal |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109087853A (en) * | 2018-07-03 | 2018-12-25 | 昆明理工大学 | A kind of method of the copper catalysis etching round and smooth processing of making herbs into wool silicon chip surface |
| CN109666972A (en) * | 2018-12-25 | 2019-04-23 | 浙江晶科能源有限公司 | A method of preparing monocrystalline silicon inverted pyramid flannelette |
| CN111394796A (en) * | 2020-03-30 | 2020-07-10 | 苏州晶瑞化学股份有限公司 | Monocrystalline silicon piece texturing agent and method for texturing by using same |
| CN111394796B (en) * | 2020-03-30 | 2021-04-30 | 苏州晶瑞化学股份有限公司 | Monocrystalline silicon piece texturing agent and method for texturing by using same |
| CN111607399A (en) * | 2020-04-29 | 2020-09-01 | 苏州美法光电科技有限公司 | Preparation method of surface corrosive liquid for silicon wafer regeneration technology |
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