CN111607399A - Preparation method of surface corrosive liquid for silicon wafer regeneration technology - Google Patents
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 97
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 97
- 239000010703 silicon Substances 0.000 title claims abstract description 97
- 239000007788 liquid Substances 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 230000008929 regeneration Effects 0.000 title claims abstract description 16
- 238000011069 regeneration method Methods 0.000 title claims abstract description 16
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 100
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 claims abstract description 61
- 239000003054 catalyst Substances 0.000 claims abstract description 60
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 claims abstract description 50
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 25
- 238000007747 plating Methods 0.000 claims abstract description 14
- 235000012431 wafers Nutrition 0.000 claims description 88
- 230000007797 corrosion Effects 0.000 claims description 70
- 238000005260 corrosion Methods 0.000 claims description 70
- 239000008098 formaldehyde solution Substances 0.000 claims description 44
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 30
- 239000000243 solution Substances 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 18
- 239000011259 mixed solution Substances 0.000 claims description 14
- 238000003756 stirring Methods 0.000 claims description 9
- 230000002378 acidificating effect Effects 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 238000011282 treatment Methods 0.000 claims description 5
- 238000005406 washing Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 18
- 230000000694 effects Effects 0.000 abstract description 5
- 229910021578 Iron(III) chloride Inorganic materials 0.000 abstract description 4
- 238000004064 recycling Methods 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 4
- 239000002344 surface layer Substances 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 239000002699 waste material Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000011276 addition treatment Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
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- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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Abstract
The invention provides a preparation method of surface corrosive liquid for silicon wafer regeneration technology, which aims at a surface pure plating silicon wafer and a surface circuit layer silicon wafer, provides corrosive liquid used in the process of recycling the silicon wafer, and can effectively remove surface substances of the silicon wafer so as to obtain a pure silicon wafer which is further put into the market for use; pure water, hydrofluoric acid, ferric trichloride, a catalyst and formaldehyde in different proportions are mixed at different temperatures in a solution, so that the corrosive liquid at normal temperature has weaker removal capability on the surface layer of the silicon wafer and longer time, and the hydrofluoric acid is prepared at the temperature of 45 ℃: catalyst: ferric chloride: formaldehyde: pure water = 1: 1: 1: 1: 50, the effect of the corrosive liquid is optimal.
Description
Technical Field
The invention belongs to the technical field of silicon wafer regeneration, and particularly relates to a preparation method of a surface corrosive liquid for a silicon wafer regeneration technology.
Background
In recent decades, the semiconductor technology has been developed rapidly, the silicon wafer has been developed from 200mm to 300mm, the critical dimension of electronic devices has been continuously reduced, the depth of focus of optical lithography equipment has been reduced, and the requirements of integrated circuit technology on the silicon wafer have been increased to the nanometer level. The smoothness and the flatness of the surface of the silicon wafer are used as important factors for the etching line width of an integrated circuit, have direct influence on the breakdown characteristic and the interface state of the integrated circuit, and also influence the service life of the integrated circuit, the performance of an IC device and the yield of the integrated circuit. Therefore, the scrapped silicon wafers generated in the manufacturing process of the semiconductor integrated circuit can only be scrapped before, and the method becomes a serious disaster area of resource waste in the semiconductor industry.
In the process of manufacturing semiconductor chips in a large scale, researchers focus on the research on the product process, and the use of the control wafer is often ignored. Because semiconductor manufacturing factory requires to expand effective monitoring to equipment in the production process thereby the guarantee satisfies the processing procedure parameter requirement, because numerous tests all can contact the silicon chip surface, consequently, directly utilize product expansion monitoring can greatly destroy product function module, cause the silicon chip can't continue to use, influence the yields of production line, increased manufacturing cost, economic nature is not enough.
The waste value of the chip wafer in 2017 in the market of the semiconductor silicon chip is 5.1 hundred million dollars, and the total amount of the waste reaches 5.6 hundred million dollars in 2019. Accordingly, there is a continuing effort in the industry to effectively reduce such costs. At present, the methods for recycling and treating the silicon wafer mainly comprise corrosion and chemical mechanical polishing.
Wet etching has been used in semiconductor manufacturing for a long time, but wet etching techniques are not mature, and numerous problems are caused due to incomplete etching, excessive etching, residue and the like in the etching process, so that the development of ULSL is greatly restricted, and the development of the wet etching process is very slow. The process stability needs to be further improved, and has certain research significance.
Therefore, it is necessary to design a method for preparing a surface etching solution for silicon wafer regeneration technology to solve the above technical problems.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention aims to provide a preparation method of a surface corrosive liquid for a silicon wafer regeneration technology.
In order to achieve the above objects and other related objects, the present invention provides the following technical solutions: a preparation method of surface corrosive liquid for a silicon wafer regeneration technology comprises a silicon wafer to be corroded, and comprises the following specific preparation steps:
the method comprises the following steps: preparing a corrosion-resistant tank, injecting 20L of pure water into the corrosion-resistant tank, adding 200mL of hydrofluoric acid, 200g of ferric trichloride, 200g of catalyst and 200mL of formaldehyde solution into the pure water, uniformly stirring, then placing the silicon wafer to be corroded, observing a reaction, and recording the specific corrosion time of the silicon wafer to be corroded;
step two: preparing a plurality of corrosion-resistant tanks, injecting 20L of pure water into each corrosion-resistant tank, adding 200mL of hydrofluoric acid, 200g of ferric trichloride, 200g of catalyst and 200mL of formaldehyde solution into the pure water, uniformly stirring, then placing the silicon wafers to be corroded, heating the solutions in the corrosion-resistant tanks one by one, wherein the heating temperatures of the solutions in the corrosion-resistant tanks are different, and respectively recording the specific corrosion time of the silicon wafers to be corroded at different temperatures;
step three: preparing a plurality of corrosion-resistant grooves, injecting 20L of pure water into each corrosion-resistant groove, adding hydrofluoric acid, ferric trichloride, a catalyst and a formaldehyde solution into each corrosion-resistant groove, increasing the amount of the hydrofluoric acid, the ferric trichloride, the catalyst and the formaldehyde solution one by taking 200mL of hydrofluoric acid, 200g of ferric trichloride, 200g of the catalyst and 200mL of the formaldehyde solution as a standard, observing a reaction, and respectively recording the specific corrosion time of the pure plating silicon wafer under the condition that one of the four materials of the hydrofluoric acid, the ferric trichloride, the catalyst and the formaldehyde solution is increased;
step four: preparing a plurality of corrosion-resistant grooves, injecting 20L of pure water into each corrosion-resistant groove, adding hydrofluoric acid, ferric trichloride, a catalyst and a formaldehyde solution into each corrosion-resistant groove, and increasing the amount of the hydrofluoric acid, ferric trichloride, the catalyst and the formaldehyde solution one by taking 200mL of hydrofluoric acid, 200g of ferric trichloride, 200g of the catalyst and 200mL of the formaldehyde solution as a standard, simultaneously heating the solutions in the corrosion-resistant grooves one by one, wherein the heating temperatures of the solutions in each corrosion-resistant groove are different, and respectively recording the specific corrosion time of the pure-coated silicon wafer under the condition that one of the four materials of the hydrofluoric acid, the ferric trichloride, the catalyst and the formaldehyde solution is increased at different temperatures
Preferably, the silicon wafer to be corroded is specifically divided into a surface pure plating silicon wafer and a surface circuit layer silicon wafer, and the preparation method of the corrosive liquid of the surface pure plating silicon wafer comprises the four steps; the preparation method of the corrosive liquid for the surface circuit layer silicon wafer is characterized in that a small step is added in each of the four steps, and specifically comprises the following steps: and (2) taking one or more corrosion-resistant tanks, injecting 20L of pure water into the corrosion tank, adding 200g of alkaline catalyst and 200g of sodium hydroxide into the pure water, fully dissolving and uniformly stirring, taking out the silicon wafer from an acidic mixed solution of the pure water, hydrofluoric acid, ferric trichloride, catalyst and formaldehyde solution, washing, then putting into an alkaline mixed solution of the pure water, the alkaline catalyst and the sodium hydroxide, and observing and recording corrosion time.
Preferably, the heating temperature in the second step is 23 degrees centigrade, 45 degrees centigrade and 65 degrees centigrade respectively.
Preferably, the amount of hydrofluoric acid, ferric trichloride, the catalyst and the formaldehyde solution added in the third step is equal to the original amount of hydrofluoric acid, ferric trichloride, the catalyst and the formaldehyde solution.
Preferably, when preparing an etching solution for etching a surface circuit layer silicon wafer, the heating treatment and the addition treatment of an acidic mixed solution composed of pure water, hydrofluoric acid, ferric trichloride, a catalyst and a formaldehyde solution correspond to an alkaline mixed solution composed of pure water, an alkaline catalyst and sodium hydroxide.
The invention provides a preparation method of surface corrosive liquid for silicon wafer regeneration technology, which aims at a surface pure plating silicon wafer and a surface circuit layer silicon wafer, provides corrosive liquid used in the process of recycling the silicon wafer, and can effectively remove surface substances of the silicon wafer so as to obtain a pure silicon wafer which is further put into the market for use; pure water, hydrofluoric acid, ferric trichloride, a catalyst and formaldehyde in different proportions are mixed at different temperatures in a solution, so that the corrosive liquid at normal temperature has weaker removal capability on the surface layer of the silicon wafer and longer time, and the hydrofluoric acid is prepared at the temperature of 45 ℃: catalyst: ferric chloride: formaldehyde: pure water 1: 1: 1: 1: 50, the effect of the corrosive liquid is optimal.
Drawings
FIG. 1 shows the original surface state of a surface pure-plated silicon wafer
FIG. 2 shows the surface state of a silicon wafer with a pure plating layer on the surface after etching.
FIG. 3 shows the original surface state of the silicon wafer with the surface circuit layer.
FIG. 4 shows the surface state of the surface circuit layer silicon wafer after etching
Detailed Description
The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will become apparent to those skilled in the art from the present disclosure.
Please refer to fig. 1 to 4. It should be understood that the structures, ratios, sizes, and the like shown in the drawings and described in the specification are only used for matching with the disclosure of the specification, so as to be understood and read by those skilled in the art, and are not used to limit the conditions under which the present invention can be implemented, so that the present invention has no technical significance, and any structural modification, ratio relationship change, or size adjustment should still fall within the scope of the present invention without affecting the efficacy and the achievable purpose of the present invention. In addition, the terms "upper", "lower", "left", "right", "middle" and "one" used in the present specification are for clarity of description, and are not intended to limit the scope of the present invention, and the relative relationship between the terms and the terms is not to be construed as a scope of the present invention.
Example (b): a preparation method of surface corrosive liquid for a silicon wafer regeneration technology comprises a silicon wafer to be corroded, and comprises the following specific preparation steps:
the method comprises the following steps: preparing a corrosion-resistant tank, injecting 20L of pure water into the corrosion-resistant tank, adding 200mL of hydrofluoric acid, 200g of ferric trichloride, 200g of catalyst and 200mL of formaldehyde solution into the pure water, uniformly stirring, then placing a silicon wafer to be corroded, observing reaction, and recording the specific corrosion time of the silicon wafer to be corroded;
step two: preparing a plurality of corrosion-resistant tanks, injecting 20L of pure water into each corrosion-resistant tank, adding 200mL of hydrofluoric acid, 200g of ferric trichloride, 200g of catalyst and 200mL of formaldehyde solution into the pure water, uniformly stirring, then placing the silicon wafers to be corroded, heating the solutions in the corrosion-resistant tanks one by one, wherein the heating temperatures of the solutions in the corrosion-resistant tanks are different, and respectively recording the specific corrosion time of the silicon wafers to be corroded at different temperatures;
step three: preparing a plurality of corrosion-resistant grooves, injecting 20L of pure water into each corrosion-resistant groove, adding hydrofluoric acid, ferric trichloride, a catalyst and a formaldehyde solution into each corrosion-resistant groove, increasing the amount of the hydrofluoric acid, the ferric trichloride, the catalyst and the formaldehyde solution one by taking 200mL of hydrofluoric acid, 200g of ferric trichloride, 200g of the catalyst and 200mL of the formaldehyde solution as a standard, observing the reaction, and respectively recording the specific corrosion time of the pure-coated silicon wafer under the condition that one of the four materials of the hydrofluoric acid, the ferric trichloride, the catalyst and the formaldehyde solution is increased;
step four: preparing a plurality of corrosion-resistant grooves, injecting 20L of pure water into each corrosion-resistant groove, adding hydrofluoric acid, ferric trichloride, a catalyst and a formaldehyde solution into each corrosion-resistant groove, increasing the amount of the hydrofluoric acid, ferric trichloride, the catalyst and the formaldehyde solution one by taking 200mL of hydrofluoric acid, 200g of ferric trichloride, 200g of the catalyst and 200mL of the formaldehyde solution as a standard, heating the solutions in the corrosion-resistant grooves one by one, wherein the heating temperatures of the solutions in the corrosion-resistant grooves are different, and recording the specific corrosion time of the pure-plated silicon wafer under the condition that one of the four materials, namely the hydrofluoric acid, the ferric trichloride, the catalyst and the formaldehyde solution is increased at different temperatures;
the invention provides a preparation method of a surface corrosive liquid for a silicon wafer regeneration technology, which aims at a surface pure plating silicon wafer and a surface circuit layer silicon wafer, provides a corrosive liquid used in the silicon wafer recycling process, and can effectively remove substances on the surface of the silicon wafer so as to obtain a pure silicon wafer, as shown in figures 1-4, the pure silicon wafer has the comparison effect of the surface states of the surface pure plating silicon wafer and the surface circuit layer silicon wafer before the pure silicon wafer is corroded and after the pure silicon wafer is corroded by the optimal corrosive liquid.
The experimental specific data are as follows:
| serial number | Pure water | Hydrofluoric acid | Catalyst and process for preparing same | Ferric chloride | Formaldehyde (I) | Temperature of | Time of day |
| 1 | 20L | 200mL | 200g | 200g | 200mL | 23℃ | 3.5h |
| 2 | 20L | 200mL | 200g | 200g | 200mL | 45℃ | 3h |
| 3 | 20L | 200mL | 200g | 200g | 200mL | 65℃ | 2h (surface damage) |
| 4 | 20L | 400mL | 200g | 200g | 200mL | 23℃ | 3.2h |
| 5 | 20L | 200mL | 400g | 200g | 200mL | 23℃ | 3.25h |
| 6 | 20L | 200mL | 200g | 400g | 200mL | 23℃ | 3.36h |
| 7 | 20L | 200mL | 200g | 200g | 400mL | 23℃ | 3.56h |
| 8 | 20L | 400mL | 200g | 200g | 200mL | 45℃ | 3.1h |
| 9 | 20L | 200mL | 400g | 200g | 200mL | 45℃ | 3.15h |
| 10 | 20L | 200mL | 200g | 400g | 200mL | 45℃ | 3.13h |
| 11 | 20L | 200mL | 200g | 200g | 400mL | 45℃ | 3.19h |
| 12 | 20L | 400mL | 200g | 200g | 200mL | 65℃ | 2.12h (surface damage) |
| 13 | 20L | 200mL | 400g | 200g | 200mL | 65℃ | 2.21h (surface damage) |
| 14 | 20L | 200mL | 200g | 400g | 200mL | 65℃ | 2.17h (surface damage) |
| 15 | 20L | 200mL | 200g | 200g | 400mL | 65℃ | 2.39h (surface damage) |
The preferred embodiment is as follows:
the silicon wafers to be corroded are specifically divided into surface pure plating silicon wafers and surface circuit layer silicon wafers, wherein the surface states of the surface pure plating silicon wafers before corrosion and after corrosion are compared in the graph of fig. 1 and fig. 2, and the surface states of the surface circuit layer silicon wafers before corrosion and after corrosion are compared in the graph of fig. 3 and fig. 4; the preparation method of the corrosive liquid of the surface pure plating silicon wafer comprises the four steps; the preparation method of the corrosive liquid for the surface circuit layer silicon wafer is characterized in that a small step is added in each of the four steps, and specifically comprises the following steps: taking one or more corrosion-resistant tanks, injecting 20L of pure water into the corrosion tank, adding 200g of alkaline catalyst and 200g of sodium hydroxide into the pure water, fully dissolving and uniformly stirring, taking out the silicon wafer from an acidic mixed solution of the pure water, hydrofluoric acid, ferric trichloride, a catalyst and a formaldehyde solution, washing, then putting into an alkaline mixed solution of the pure water, the alkaline catalyst and the sodium hydroxide, and observing and recording corrosion time; the silicon wafer with the surface circuit layer and the silicon wafer with the pure plating layer are different in preparation, and the silicon wafer with the surface circuit layer contains metal components on the surface, so that the silicon wafer with the surface circuit layer is required to be put into an acidic mixed solution composed of pure water, hydrofluoric acid, ferric trichloride, a catalyst and a formaldehyde solution for corrosion when a solution is prepared, and then the silicon wafer is taken out, washed completely and then put into an alkaline mixed solution composed of pure water, an alkaline catalyst and sodium hydroxide for corrosion.
The heating temperature in the second step is 23 ℃, 45 ℃ and 65 ℃.
Increasing the amount of hydrofluoric acid, ferric trichloride, a catalyst and a formaldehyde solution to be equal to the original amount of hydrofluoric acid, a ferric trichloride catalyst and a formaldehyde solution; the amount of hydrofluoric acid, ferric trichloride, catalyst and formaldehyde solution was doubled.
When preparing the etching solution for etching the silicon wafer with the surface circuit layer, the heating treatment and the adding treatment of the acidic mixed solution consisting of pure water, hydrofluoric acid, ferric trichloride, a catalyst and a formaldehyde solution correspond to the alkaline mixed solution consisting of pure water, an alkaline catalyst and sodium hydroxide.
Finally, after a plurality of tests and preparations, the corrosive liquid at normal temperature has weak capability of removing the surface layer of the silicon wafer and has long time, so that hydrofluoric acid is prepared at the temperature of 45 ℃: catalyst: ferric chloride: formaldehyde: pure water 1: 1: 1: 1: 50, the effect of the corrosive liquid is optimal.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (5)
1. A preparation method of surface corrosive liquid for silicon wafer regeneration technology is characterized by comprising the following steps: the method comprises a silicon wafer to be corroded, and comprises the following specific preparation steps:
the method comprises the following steps: preparing a corrosion-resistant tank, injecting 20L of pure water into the corrosion-resistant tank, adding 200mL of hydrofluoric acid, 200g of ferric trichloride, 200g of catalyst and 200mL of formaldehyde solution into the pure water, uniformly stirring, then placing the silicon wafer to be corroded, observing a reaction, and recording the specific corrosion time of the silicon wafer to be corroded;
step two: preparing a plurality of corrosion-resistant tanks, injecting 20L of pure water into each corrosion-resistant tank, adding 200mL of hydrofluoric acid, 200g of ferric trichloride, 200g of catalyst and 200mL of formaldehyde solution into the pure water, uniformly stirring, then placing the silicon wafers to be corroded, heating the solutions in the corrosion-resistant tanks one by one, wherein the heating temperatures of the solutions in the corrosion-resistant tanks are different, and respectively recording the specific corrosion time of the silicon wafers to be corroded at different temperatures;
step three: preparing a plurality of corrosion-resistant grooves, injecting 20L of pure water into each corrosion-resistant groove, adding hydrofluoric acid, ferric trichloride, a catalyst and a formaldehyde solution into each corrosion-resistant groove, increasing the amount of the hydrofluoric acid, the ferric trichloride, the catalyst and the formaldehyde solution one by taking 200mL of hydrofluoric acid, 200g of ferric trichloride, 200g of the catalyst and 200mL of the formaldehyde solution as a standard, observing a reaction, and respectively recording the specific corrosion time of the pure plating silicon wafer under the condition that one of the four materials of the hydrofluoric acid, the ferric trichloride, the catalyst and the formaldehyde solution is increased;
step four: preparing a plurality of corrosion-resistant grooves, injecting 20L of pure water into each corrosion-resistant groove, adding hydrofluoric acid, ferric trichloride, a catalyst and a formaldehyde solution into each corrosion-resistant groove, and increasing the amount of the hydrofluoric acid, ferric trichloride, the catalyst and the formaldehyde solution one by taking 200mL of hydrofluoric acid, 200g of ferric trichloride, 200g of the catalyst and 200mL of the formaldehyde solution as a standard, simultaneously heating the solutions in the corrosion-resistant grooves one by one, wherein the heating temperatures of the solutions in each corrosion-resistant groove are different, and recording the specific corrosion time of the pure plating silicon wafer under the condition that one of the four materials of the hydrofluoric acid, the ferric trichloride, the catalyst and the formaldehyde solution is increased at different temperatures respectively.
2. The method for preparing the surface etching solution for the silicon wafer regeneration technology according to claim 1, wherein the method comprises the following steps: the preparation method of the etching solution for the surface pure coating silicon wafer comprises the four steps; the preparation method of the corrosive liquid for the surface circuit layer silicon wafer is characterized in that a small step is added in each of the four steps, and specifically comprises the following steps: and (2) taking one or more corrosion-resistant tanks, injecting 20L of pure water into the corrosion tank, adding 200g of alkaline catalyst and 200g of sodium hydroxide into the pure water, fully dissolving and uniformly stirring, taking out the silicon wafer from an acidic mixed solution of the pure water, hydrofluoric acid, ferric trichloride, catalyst and formaldehyde solution, washing, then putting into an alkaline mixed solution of the pure water, the alkaline catalyst and the sodium hydroxide, and observing and recording corrosion time.
3. The method for preparing the surface etching solution for the silicon wafer regeneration technology according to claim 1, wherein the method comprises the following steps: and the heating temperature in the second step is 23 ℃, 45 ℃ and 65 ℃ respectively.
4. The method for preparing the surface etching solution for the silicon wafer regeneration technology according to claim 1, wherein the method comprises the following steps: and in the third step, the amounts of the hydrofluoric acid, the ferric trichloride, the catalyst and the formaldehyde solution are increased to be equal to the original amounts of the hydrofluoric acid, the ferric trichloride catalyst and the formaldehyde solution.
5. The method for preparing the surface etching solution for the silicon wafer regeneration technology according to claim 2, wherein the method comprises the following steps: when preparing the etching solution for etching the silicon wafer with the surface circuit layer, the heating treatment and the adding treatment of the acidic mixed solution consisting of pure water, hydrofluoric acid, ferric trichloride, a catalyst and a formaldehyde solution correspond to the alkaline mixed solution consisting of pure water, an alkaline catalyst and sodium hydroxide.
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