CN103710705A - Additive for acidic texturing liquid of polycrystalline silicon wafers and application thereof - Google Patents
Additive for acidic texturing liquid of polycrystalline silicon wafers and application thereof Download PDFInfo
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- CN103710705A CN103710705A CN201310717249.XA CN201310717249A CN103710705A CN 103710705 A CN103710705 A CN 103710705A CN 201310717249 A CN201310717249 A CN 201310717249A CN 103710705 A CN103710705 A CN 103710705A
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Abstract
The invention relates to an additive for acidic texturing liquid of polycrystalline silicon wafers and an application thereof. The additive comprises the following components: pentaerythritol, anhydrous sodium acetate, polyethylene glycol and deionized water. An acidic texturing method using the additive comprises the following steps: 1) dissolving pentaerythritol, anhydrous sodium acetate and polyethylene glycol in deionized water to prepare the additive; 2) dissolving hydrofluoric acid and nitric acid in deionized water to prepare a mixed acid solution, and then, adding the additive into the mixed acid solution to obtain acidic texturing liquid; 3) soaking a mortar cut polycrystalline silicon wafer or a diamond wire cut polycrystalline silicon wafer in the acidic texturing liquid for texturing. By adopting the additive provided by the invention, after the texturing operation, the reflectivity of the diamond wire cut polycrystalline silicon wafer is about 6% less than the reflectivity of the diamond wire cut polycrystalline silicon wafer in a conventional texturing process, and the reflectivity of the mortar cut polycrystalline silicon wafer is about 3-5% less than the reflectivity of the mortar cut polycrystalline silicon wafer in the conventional texturing process.
Description
Technical field
The present invention relates to a kind of additive and application thereof of polycrystalline silicon wafer acidity texture preparation liquid, be specifically related to a kind of additive of the acid making herbs into wool of polysilicon chip that can simultaneously be applied to mortar cutting and diamond wire cutting and apply the method that this additive carries out sour making herbs into wool.
Background technology
At present in the cutting of photovoltaic field crystal silicon chip used mainly to adopt mortar multi-wire saw technology, but the problem such as this technology exists that cutting technique inefficiency, cutting processing cost are high, the exhaust emission of waste mortar is large after cutting.By contrast, because having, cutting efficiency is high, cutting processing cost is low and the advantage such as clean environment for solid abrasive diamond fretsaw cutting (being called for short diamond wire cutting) technology, receive increasing concern, be expected to become the future thrust of the hard and fragile material microtomies such as crystalline silicon.
Mortar multi-wire saw is to utilize one by one the Stainless Steel Wire of very long copper coating nickel to be looped around on driving wheel and tightening pulley, carries out the cutting technique of high-speed cutting under the drive of the driving wheel that runs up.In cutting process, line of cut does not carry out machining, and its Main Function is to bring at a high speed cutting zone into and to abrasive material applied load, finally by abrasive material, silicon materials are carried out to grinding cutting take the grinding slurry that polyoxyethylene glycol and silicon carbide micro-powder be main body.Diamond fretsaw is normally to electroplate or the fixing method of resin anchors at diamond particles and makes in the nickel base alloy layer on Stainless Steel Wire top layer.In cutting process, diamond fretsaw runs up, and with certain pressure, silicon materials is directly carried out to grinding cutting.Compare with " the trisome processing " of mortar multi-wire saw, diamond fretsaw belongs to " disome processing ", its working (machining) efficiency is the several times of mortar multi-wire saw, and when cutting processing silicon chip without adding the ground slurries such as silicon carbide micro-powder, tooling cost and the environmental pollution that can significantly reduce silicon chip are little.
Because the incision principle of diamond wire cutting is different from the incision principle of mortar multi-wire saw, so the pattern of the silicon chip surface that two kinds of cutting techniques obtain exists very big-difference.The silicon chip surface of mortar multi-wire saw mainly be take pattern that brittle crush breaks to form as main, and silicon chip surface exists a lot of small irregular pits (as shown in Figure 1).And the silicon chip surface of diamond wire cutting is except the irregular pit that exists brittle crush to break to form, also there is the smooth cutting line being formed by ductile grinding cutting in a large number, so the silicon chip surface of final diamond wire cutting presents the mixing pattern (as shown in Figure 2) of fragility and plasticity.
In manufacture of solar cells process, silicon chip surface texturing (making herbs into wool) is reducing surface albedo important role, is also one of effective means improving solar cell photoelectric transformation efficiency.The leather producing process of polysilicon chip adopts HF-HNO more at present
3-H
2the wet-chemical etching technique of the acidic solution of O system, this acidic solution utilization be that the various defects of silicon chip surface are carried out to isotropic etch, thereby reduce silicon chip surface reflectivity.Mortar multiline cut silicon chips surface is mainly irregular pit, and defect distribution good uniformity, therefore pass through HF-HNO
3-H
2the leather producing process of O system can obtain whole corrosion uniform matte (as shown in Figure 3).But silicon wafer cut by diamond wire surface is the mixing pattern that irregular pit and smooth cutting line form, surface imperfection skewness, therefore by conventional HF-HNO
3-H
2the leather producing process of O system cannot obtain whole corrosion uniform matte (as shown in Figure 4).
Application number is the etching method that 201110112185.1 Chinese patent has been announced a kind of silicon wafer cut by diamond wire.This patent is at HF-HNO
3in system, add H
2sO
4or H
3pO
4, pass through H
2sO
4or H
3pO
4catalysis and shock absorption control speed of reaction, thereby reduce the surface albedo of silicon chip after making herbs into wool, but this patent need add a large amount of H
2sO
4or H
3pO
4reach the target that reduces reflectivity, making herbs into wool cost is higher, and the making herbs into wool system of this patent is rich HF system, and after making herbs into wool, silicon chip surface is prone to the dark line being formed by deep corrosion hole, can have a negative impact to the electricity conversion of solar cell.Application number is the additive that 201010540761.8 and 201110212876.9 Chinese patent discloses respectively two kinds of polycrystalline silicon wafer acidity texture preparation liquids, and the additive component described in the patent that wherein application number is 201010540761.8 is H
2sO
4, H
3pO
4and H
2o, the additive component described in the patent that application number is 201110212876.9 is polyvinylpyrrolidone, trolamine and water.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of additive of the acid making herbs into wool of polysilicon chip that can simultaneously be applied to mortar cutting and diamond wire cutting and applies the method that this additive carries out sour making herbs into wool.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of additive of polycrystalline silicon wafer acidity texture preparation liquid, comprises following component: tetramethylolmethane, sodium acetate, anhydrous, polyoxyethylene glycol and deionized water.
Wherein, the weight percentage of described tetramethylolmethane is 0.5～2%, and the weight percent of described sodium acetate, anhydrous is 0.5～2%, and the weight percentage of described polyoxyethylene glycol is 0.5～2%, and the weight percentage of described deionized water is 94～98.5%.
The invention has the beneficial effects as follows: additive nontoxicity of the present invention, non-corrosiveness, preparation and operation are simple, have good actual application value.
On the basis of technique scheme, the present invention can also do following improvement.
Further, the molecular weight of described polyoxyethylene glycol is 200～5000, is preferably 400～1000.
Further, described polyoxyethylene glycol be the polyoxyethylene glycol of molecular weight 200, the polyoxyethylene glycol of the polyoxyethylene glycol of molecular weight 300, molecular weight 400, the polyoxyethylene glycol of the polyoxyethylene glycol of molecular weight 600, molecular weight 1000, the polyoxyethylene glycol of the polyoxyethylene glycol of molecular weight 1500, molecular weight 2000, any one in the polyoxyethylene glycol of the polyoxyethylene glycol of molecular weight 4000 or molecular weight 5000.Be preferably any one in the polyoxyethylene glycol of the polyoxyethylene glycol of molecular weight 400, the polyoxyethylene glycol of molecular weight 600 or molecular weight 1000.
Another technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind ofly apply the method that above-mentioned additive carries out sour making herbs into wool, comprise the following steps:
1), by tetramethylolmethane, sodium acetate, anhydrous and polyoxyethylene glycol are dissolved in deionized water, make additive, wherein,
The weight percentage of described tetramethylolmethane is 0.5～2%, and the weight percent of described sodium acetate, anhydrous is 0.5～2%, and the weight percentage of described polyoxyethylene glycol is 0.5～2%, and the weight percentage of described deionized water is 94～98.5%;
2) hydrofluoric acid and nitric acid are dissolved in deionized water and make sour mixing solutions, then the additive making in step 1) is joined in described sour mixing solutions, obtain acid Woolen-making liquid, wherein,
The weight percentage of described hydrofluoric acid is 5～10%, and the weight percentage of described nitric acid is 35～50%, and the weight percentage of additive is 0.2～1%, and the weight percentage of described deionized water is 39～59.8%;
3) mortar is cut to polysilicon chip or diamond wire cutting polysilicon chip and is immersed in step 2) in carry out making herbs into wool in the acid Woolen-making liquid that makes.
Further, in step 3), described in to carry out the processing condition of making herbs into wool as follows: the making herbs into wool temperature of making herbs into wool process is 5～25 ℃, is preferably 5～10 ℃; The making herbs into wool time is 60～200 seconds, is preferably 100～150 seconds.
The present invention is by cutting this additive application the sour leather producing process of polysilicon chip in mortar cutting and diamond wire, can make low 6% left and right of reflectivity of diamond wire cutting polysilicon chip after the conventional leather producing process making herbs into wool of luminance factor of diamond wire cutting polysilicon chip after making herbs into wool, make low 3～5% left and right of reflectivity of mortar cutting polysilicon chip after the conventional leather producing process of luminance factor of mortar cutting polysilicon chip after making herbs into wool.
Another technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of application of additive of above-mentioned polycrystalline silicon wafer acidity texture preparation liquid, described additive can be applied to mortar cutting and diamond wire cutting simultaneously.
Accompanying drawing explanation
Fig. 1 is the scanning electron microscope diagram sheet of mortar multi-wire saw polysilicon chip;
Fig. 2 is the scanning electron microscope diagram sheet of diamond wire cutting polysilicon chip;
Fig. 3 is the scanning electron microscope diagram sheet after the conventional making herbs into wool of mortar multi-wire saw polysilicon chip;
Fig. 4 is the scanning electron microscope diagram sheet after the making herbs into wool of mortar polycrystalline cutting polysilicon chip additive;
Fig. 5 is the scanning electron microscope diagram sheet after the conventional making herbs into wool of diamond wire cutting polysilicon chip;
Fig. 6 is the scanning electron microscope diagram sheet of diamond wire cutting polysilicon chip after the additive making herbs into wool of the specific embodiment of the invention 2.
Embodiment
Below in conjunction with accompanying drawing, principle of the present invention and feature are described, example, only for explaining the present invention, is not intended to limit scope of the present invention.
Embodiment 1
An additive for polycrystalline silicon wafer acidity texture preparation liquid, comprises following component: tetramethylolmethane, sodium acetate, anhydrous, polyoxyethylene glycol and deionized water.
Wherein, the weight percentage of described tetramethylolmethane is 0.5%, and the weight percent of described sodium acetate, anhydrous is 0.5%, and the weight percentage of described polyoxyethylene glycol is 0.5%, and surplus is deionized water.
Described polyoxyethylene glycol is the polyoxyethylene glycol of molecular weight 200.
Apply the method that above-mentioned additive carries out sour making herbs into wool, comprise the following steps:
1) additive preparation: by tetramethylolmethane, sodium acetate, anhydrous and polyoxyethylene glycol are dissolved in deionized water, make additive;
2) prepare acid Woolen-making liquid: hydrofluoric acid and nitric acid are dissolved in deionized water and make sour mixing solutions, then the additive making in step 1) is joined in described sour mixing solutions, obtain acid Woolen-making liquid, wherein,
The weight percentage of described hydrofluoric acid is 5%, and the weight percentage of described nitric acid is 35%, and the weight percentage of additive is 0.2%, and surplus is deionized water;
3) in the acid Woolen-making liquid making making herbs into wool: mortar is cut to polysilicon chip or diamond wire cutting polysilicon chip and be immersed in step 2), carry out making herbs into wool, the making herbs into wool temperature of making herbs into wool process is 25 ℃, and the making herbs into wool time is 60 seconds.
Embodiment 2
An additive for polycrystalline silicon wafer acidity texture preparation liquid, comprises following component: tetramethylolmethane, sodium acetate, anhydrous, polyoxyethylene glycol and deionized water.
Wherein, the weight percentage of described tetramethylolmethane is 2%, and the weight percent of described sodium acetate, anhydrous is 2%, and the weight percentage of described polyoxyethylene glycol is 2%, and surplus is deionized water.
Described polyoxyethylene glycol is the polyoxyethylene glycol of molecular weight 400.
Apply the method that above-mentioned additive carries out sour making herbs into wool, comprise the following steps:
1) additive preparation: by tetramethylolmethane, sodium acetate, anhydrous and polyoxyethylene glycol are dissolved in deionized water, make additive;
2) prepare acid Woolen-making liquid: hydrofluoric acid and nitric acid are dissolved in deionized water and make sour mixing solutions, then the additive making in step 1) is joined in described sour mixing solutions, obtain acid Woolen-making liquid, wherein,
The weight percentage of described hydrofluoric acid is 10%, and the weight percentage of described nitric acid is 50%, and the weight percentage of additive is 1%, and surplus is deionized water;
3) in the acid Woolen-making liquid making making herbs into wool: mortar is cut to polysilicon chip or diamond wire cutting polysilicon chip and be immersed in step 2), carry out making herbs into wool, the making herbs into wool temperature of making herbs into wool process is 5 ℃, and the making herbs into wool time is 200 seconds.
Embodiment 3
An additive for polycrystalline silicon wafer acidity texture preparation liquid, comprises following component: tetramethylolmethane, sodium acetate, anhydrous, polyoxyethylene glycol and deionized water.
Wherein, the weight percentage of described tetramethylolmethane is 1%, and the weight percent of described sodium acetate, anhydrous is 1%, and the weight percentage of described polyoxyethylene glycol is 1%, and surplus is deionized water.
Described polyoxyethylene glycol is the polyoxyethylene glycol of molecular weight 1000.
Apply the method that above-mentioned additive carries out sour making herbs into wool, comprise the following steps:
1) additive preparation: by tetramethylolmethane, sodium acetate, anhydrous and polyoxyethylene glycol are dissolved in deionized water, make additive;
2) prepare acid Woolen-making liquid: hydrofluoric acid and nitric acid are dissolved in deionized water and make sour mixing solutions, then the additive making in step 1) is joined in described sour mixing solutions, obtain acid Woolen-making liquid, wherein,
The weight percentage of described hydrofluoric acid is 6%, and the weight percentage of described nitric acid is 40%, and the weight percentage of additive is 0.5%, and surplus is deionized water;
3) in the acid Woolen-making liquid making making herbs into wool: mortar is cut to polysilicon chip or diamond wire cutting polysilicon chip and be immersed in step 2), carry out making herbs into wool, the making herbs into wool temperature of making herbs into wool process is 10 ℃, and the making herbs into wool time is 100 seconds.
Embodiment 4
An additive for polycrystalline silicon wafer acidity texture preparation liquid, comprises following component: tetramethylolmethane, sodium acetate, anhydrous, polyoxyethylene glycol and deionized water.
Wherein, the weight percentage of described tetramethylolmethane is 1.5%, and the weight percent of described sodium acetate, anhydrous is 1.5%, and the weight percentage of described polyoxyethylene glycol is 1.5%, and surplus is deionized water.
Described polyoxyethylene glycol is the polyoxyethylene glycol of molecular weight 1500.
Apply the method that above-mentioned additive carries out sour making herbs into wool, comprise the following steps:
1) additive preparation: by tetramethylolmethane, sodium acetate, anhydrous and polyoxyethylene glycol are dissolved in deionized water, make additive;
2) prepare acid Woolen-making liquid: hydrofluoric acid and nitric acid are dissolved in deionized water and make sour mixing solutions, then the additive making in step 1) is joined in described sour mixing solutions, obtain acid Woolen-making liquid, wherein,
The weight percentage of described hydrofluoric acid is 8%, and the weight percentage of described nitric acid is 45%, and the weight percentage of additive is 0.8%, and surplus is deionized water;
3) in the acid Woolen-making liquid making making herbs into wool: mortar is cut to polysilicon chip or diamond wire cutting polysilicon chip and be immersed in step 2), carry out making herbs into wool, the making herbs into wool temperature of making herbs into wool process is 15 ℃, and the making herbs into wool time is 150 seconds.
An additive for polycrystalline silicon wafer acidity texture preparation liquid, comprises following component: tetramethylolmethane, sodium acetate, anhydrous, polyoxyethylene glycol and deionized water.
Wherein, the weight percentage of described tetramethylolmethane is 1.8%, and the weight percent of described sodium acetate, anhydrous is 1.8%, and the weight percentage of described polyoxyethylene glycol is 1.8%, and surplus is deionized water.
Described polyoxyethylene glycol is the polyoxyethylene glycol of molecular weight 5000.
Apply the method that above-mentioned additive carries out sour making herbs into wool, comprise the following steps:
1) additive preparation: by tetramethylolmethane, sodium acetate, anhydrous and polyoxyethylene glycol are dissolved in deionized water, make additive;
2) prepare acid Woolen-making liquid: hydrofluoric acid and nitric acid are dissolved in deionized water and make sour mixing solutions, then the additive making in step 1) is joined in described sour mixing solutions, obtain acid Woolen-making liquid, wherein,
The weight percentage of described hydrofluoric acid is 9%, and the weight percentage of described nitric acid is 42%, and the weight percentage of additive is 0.9%, and surplus is deionized water;
3) in the acid Woolen-making liquid making making herbs into wool: mortar is cut to polysilicon chip or diamond wire cutting polysilicon chip and be immersed in step 2), carry out making herbs into wool, the making herbs into wool temperature of making herbs into wool process is 20 ℃, and the making herbs into wool time is 120 seconds.
Below by two specific embodiments so that the present invention is specifically described.
Specific embodiment 1
Specific embodiment 1 provides a comparative example, for not applying the conventional etching method of additive of the present invention:
Adopt following steps:
1) prepare acid Woolen-making liquid: under stirring action, nitric acid and 5L deionized water that the hydrofluoric acid that is 40% by 2L concentration, 8L concentration are 65～68% mix;
2) making herbs into wool: mortar is cut in the above-mentioned acid Woolen-making liquid of polysilicon chip immersion and carries out making herbs into wool, and making herbs into wool temperature is 7 ℃, and the making herbs into wool time is 80s.Diamond wire is cut in the above-mentioned acid Woolen-making liquid of polysilicon chip immersion and carries out making herbs into wool, and making herbs into wool temperature is 7 ℃, and the making herbs into wool time is 90s.
After making herbs into wool, the surface albedo of mortar cutting polysilicon chip is 24.0%, and the diamond wire cutting polysilicon chip surface albedo after making herbs into wool is 27.0%.Fig. 3 has provided the scanning electron microscope diagram sheet of the mortar cutting polysilicon chip surface matte obtaining, Fig. 5 has provided the scanning electron microscope diagram sheet of the diamond wire cutting polysilicon chip surface matte obtaining, and knownly from picture has obtained that size is uneven, the matte of skewness.
Specific embodiment 2
Specific embodiment 2 is the etching method of application additive of the present invention, adopts following steps:
1) additive preparation: under stirring action, by 0.5g tetramethylolmethane, 1.0g sodium acetate, anhydrous and 1.5g polyoxyethylene glycol (molecular weight 400) are dissolved in 97g deionized water (that is: in the additive preparing, the weight percentage of described tetramethylolmethane is 0.5%, the weight percentage of described sodium acetate, anhydrous is 1%, and the weight percentage of described polyoxyethylene glycol is 1.5%);
2) prepare acid Woolen-making liquid: under stirring action, nitric acid and 5L deionized water that the hydrofluoric acid that is 40% by 2L concentration, 8L concentration are 65～68% mix, then add the above-mentioned additive of 75mL, stir (that is: in the acid Woolen-making liquid preparing, the weight percentage of described hydrofluoric acid is 5%, the weight percentage of described nitric acid is 40%, and the weight percentage of described additive is 0.4%);
3) making herbs into wool:
Mortar is cut in the above-mentioned acid Woolen-making liquid of polysilicon chip immersion and carries out making herbs into wool, and making herbs into wool temperature is 7 ℃, and the making herbs into wool time is 100 seconds.
Diamond wire is cut in the above-mentioned acid Woolen-making liquid of polysilicon chip immersion and carries out making herbs into wool, and making herbs into wool temperature is 7 ℃, and the making herbs into wool time is 120 seconds.
Mortar cutting polysilicon chip surface albedo after making herbs into wool is 19.5%, and the diamond wire cutting polysilicon chip surface albedo after making herbs into wool is 20.5%.Fig. 4 has provided the scanning electron microscope diagram sheet of the mortar cutting polysilicon chip surface matte obtaining, Fig. 6 has provided the scanning electron microscope diagram sheet of the diamond wire cutting polysilicon chip surface matte obtaining, and applies as we know from the figure the matte size that additive of the present invention obtains after to silicon wafer wool making and distributes all better than conventional making herbs into wool.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (9)
1. an additive for polycrystalline silicon wafer acidity texture preparation liquid, is characterized in that, comprises following component: tetramethylolmethane, sodium acetate, anhydrous, polyoxyethylene glycol and deionized water;
Wherein, the weight percentage of described tetramethylolmethane is 0.5～2%, and the weight percent of described sodium acetate, anhydrous is 0.5～2%, and the weight percentage of described polyoxyethylene glycol is 0.5～2%, and the weight percentage of described deionized water is 94～98.5%.
2. the additive of polycrystalline silicon wafer acidity texture preparation liquid according to claim 1, is characterized in that, the molecular weight of described polyoxyethylene glycol is 200～5000.
3. the additive of polycrystalline silicon wafer acidity texture preparation liquid according to claim 2, it is characterized in that, described polyoxyethylene glycol be the polyoxyethylene glycol of molecular weight 200, the polyoxyethylene glycol of the polyoxyethylene glycol of molecular weight 300, molecular weight 400, the polyoxyethylene glycol of the polyoxyethylene glycol of molecular weight 600, molecular weight 1000, the polyoxyethylene glycol of the polyoxyethylene glycol of molecular weight 1500, molecular weight 2000, any one in the polyoxyethylene glycol of the polyoxyethylene glycol of molecular weight 4000 or molecular weight 5000.
4. the additive of polycrystalline silicon wafer acidity texture preparation liquid according to claim 2, is characterized in that, the molecular weight of described polyoxyethylene glycol is 400～1000.
5. the additive of polycrystalline silicon wafer acidity texture preparation liquid according to claim 4, is characterized in that, described polyoxyethylene glycol is that the polyoxyethylene glycol of molecular weight 400 is, any one in the polyoxyethylene glycol of the polyoxyethylene glycol of molecular weight 600 or molecular weight 1000.
6. the method that the additive described in application rights requirement 1 to 5 any one carries out sour making herbs into wool, is characterized in that, comprises the following steps:
1), by tetramethylolmethane, sodium acetate, anhydrous and polyoxyethylene glycol are dissolved in deionized water, make additive, wherein,
The weight percentage of described tetramethylolmethane is 0.5～2%, and the weight percent of described sodium acetate, anhydrous is 0.5～2%, and the weight percentage of described polyoxyethylene glycol is 0.5～2%, and the weight percentage of described deionized water is 94～98.5%;
2) hydrofluoric acid and nitric acid are dissolved in deionized water and make sour mixing solutions, then the additive making in step 1) is joined in described sour mixing solutions, obtain acid Woolen-making liquid, wherein,
The weight percentage of described hydrofluoric acid is 5～10%, and the weight percentage of described nitric acid is 35～50%, and the weight percentage of additive is 0.2～1%, and the weight percentage of described deionized water is 39～59.8%;
3) mortar is cut to polysilicon chip or diamond wire cutting polysilicon chip and is immersed in step 2) in carry out making herbs into wool in the acid Woolen-making liquid that makes.
7. the method for sour making herbs into wool according to claim 6, is characterized in that, in step 3), described in to carry out the processing condition of making herbs into wool as follows: the making herbs into wool temperature of making herbs into wool process is 5～25 ℃, and the making herbs into wool time is 60～200 seconds.
8. the method for sour making herbs into wool according to claim 7, is characterized in that, the making herbs into wool temperature of described making herbs into wool process is 5～10 ℃, and the making herbs into wool time is 100～150 seconds.
9. an application for the additive of the polycrystalline silicon wafer acidity texture preparation liquid described in claim 1 to 5 any one, is characterized in that, described additive can be applied to mortar cutting and diamond wire cutting simultaneously.
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| CN104328504A (en) * | 2014-11-13 | 2015-02-04 | 苏州润阳光伏科技有限公司 | Polycrystal texturing auxiliary and application method thereof |
| CN104576830A (en) * | 2014-12-30 | 2015-04-29 | 江西赛维Ldk太阳能高科技有限公司 | Texturing pretreatment liquid and texturing pretreatment method for diamond wire cutting polycrystalline silicon sheet, texturing pretreatment silicon sheet and application of texturing pretreatment silicon sheet |
| CN107217306A (en) * | 2017-05-19 | 2017-09-29 | 湖州三峰能源科技有限公司 | The Chemical composition that of polysilicon chip acid making herbs into wool optimization agent and its application |
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| CN108767025A (en) * | 2017-06-23 | 2018-11-06 | 浙江光隆能源科技股份有限公司 | A kind of process for etching of diamond wire solar battery sheet |
| CN109554762A (en) * | 2018-12-18 | 2019-04-02 | 武汉风帆电化科技股份有限公司 | A kind of polysilicon etch solution additive and its application |
| CN110846721A (en) * | 2019-10-12 | 2020-02-28 | 湖南理工学院 | Monocrystalline silicon texturing additive formula containing polyalcohol and PEG |
| CN111843836A (en) * | 2019-04-29 | 2020-10-30 | 苏州澳京光伏科技有限公司 | Surface treatment method for diamond wire cutting polycrystalline silicon wafer |
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