CN107217306A - The Chemical composition that of polysilicon chip acid making herbs into wool optimization agent and its application - Google Patents
The Chemical composition that of polysilicon chip acid making herbs into wool optimization agent and its application Download PDFInfo
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- CN107217306A CN107217306A CN201710358791.9A CN201710358791A CN107217306A CN 107217306 A CN107217306 A CN 107217306A CN 201710358791 A CN201710358791 A CN 201710358791A CN 107217306 A CN107217306 A CN 107217306A
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- wool
- making herbs
- chemical composition
- polysilicon chip
- agent
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 54
- 210000002268 wool Anatomy 0.000 title claims abstract description 54
- 235000008216 herbs Nutrition 0.000 title claims abstract description 52
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 45
- 239000000203 mixture Substances 0.000 title claims abstract description 34
- 239000000126 substance Substances 0.000 title claims abstract description 29
- 239000003795 chemical substances by application Substances 0.000 title claims abstract description 26
- 238000005457 optimization Methods 0.000 title claims abstract description 14
- 239000002253 acid Substances 0.000 title claims description 29
- 238000005520 cutting process Methods 0.000 claims abstract description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 27
- 239000010703 silicon Substances 0.000 claims abstract description 27
- 239000004570 mortar (masonry) Substances 0.000 claims abstract description 14
- 150000003839 salts Chemical class 0.000 claims abstract description 9
- 229920000642 polymer Polymers 0.000 claims abstract description 8
- 238000010276 construction Methods 0.000 claims abstract description 7
- 150000004867 thiadiazoles Chemical class 0.000 claims abstract description 7
- 150000005846 sugar alcohols Polymers 0.000 claims abstract description 5
- 239000007864 aqueous solution Substances 0.000 claims abstract description 4
- 239000007788 liquid Substances 0.000 claims description 26
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 17
- 125000000217 alkyl group Chemical group 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical group O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 7
- 229910017604 nitric acid Inorganic materials 0.000 claims description 7
- 239000011259 mixed solution Substances 0.000 claims description 6
- XWROUVVQGRRRMF-UHFFFAOYSA-N F.O[N+]([O-])=O Chemical compound F.O[N+]([O-])=O XWROUVVQGRRRMF-UHFFFAOYSA-N 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 239000002202 Polyethylene glycol Substances 0.000 claims description 2
- 125000003545 alkoxy group Chemical group 0.000 claims description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 2
- 229920001223 polyethylene glycol Polymers 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 claims 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 2
- 238000002310 reflectometry Methods 0.000 abstract description 7
- 238000002360 preparation method Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 239000000243 solution Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 11
- 238000005530 etching Methods 0.000 description 8
- 229910003460 diamond Inorganic materials 0.000 description 7
- 239000010432 diamond Substances 0.000 description 7
- 239000012530 fluid Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000012876 topography Methods 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 230000004075 alteration Effects 0.000 description 4
- 150000001721 carbon Chemical group 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002671 adjuvant Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229960002163 hydrogen peroxide Drugs 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 241001597008 Nomeidae Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical group C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910021418 black silicon Inorganic materials 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 125000003636 chemical group Chemical group 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- OBISXEJSEGNNKL-UHFFFAOYSA-N dinitrogen-n-sulfide Chemical compound [N-]=[N+]=S OBISXEJSEGNNKL-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000013528 metallic particle Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The sour making herbs into wool of polysilicon chip that the present invention is provided optimizes the Chemical composition that of agent, and said composition is the aqueous solution, and solute is：(1) there is the polymer of thiadiazoles drone salt construction unit；(2) polyalcohol or derivatives thereof.Present invention also offers application of the Chemical composition that of the sour making herbs into wool optimization agent of above-mentioned polysilicon chip in mortar line or the sour making herbs into wool of Buddha's warrior attendant wire cutting polysilicon chip.The Chemical composition that preparation and application is simple, easily implement, reproducible, when it is used for mortar line or Buddha's warrior attendant wire cutting polysilicon making herbs into wool, making herbs into wool effect is significantly improved, obtained silicon chip appearance face is uniform and reflectivity is low, appearance color after silicon chip film-coated is uniform, when not adding assistant chemical composition compared with the uniformity of matte be improved significantly.
Description
Technical field
The invention belongs to new energy field, more particularly to a kind of chemical group for optimizing agent for the making herbs into wool of polysilicon chip surface acid
Compound, further relates to the optimization agent Chemical composition that and is preparing the acid system for mortar line or Buddha's warrior attendant wire cutting polycrystalline silicon texturing
Application in suede liquid.
Background technology
The reflection of silicon chip surface incident light greatly reduces the efficiency (electric current) of silicon solar cell.If silicon cell table
Face is handled without antireflective, then, about 40% sunshine will lose.This anti-reflection effect is in whole sun power spectrum
With must be effective in various incident angle of light.
At present, the antireflective on crystal silicon photovoltaic cell passes through several different technologies.For monocrystalline silicon, anisotropy
The reflectivity of (pyramid) matte etching silicon single crystal is reduced to towards 100 single crystal silicons on about 5-15%, but main close
The incident light at 90 ° of angles rather than the reflectivity at low incidence angle.This technology can also consume substantial amounts of silicon materials, make it actual
Applied to thin film silicon solar cell.For polysilicon, pitting shape matte is obtained using acid isotropic etch method, makes table
Face reflectivity is reduced to 15-20%.With the development of silicon chip cutting technique, silicon wafer cut by diamond wire technology is due to its cost and ring
Guarantor's advantage will replace mortar line to turn into the main flow of silicon chip production technology.However, Buddha's warrior attendant wire cutting polycrystalline silicon texturing turns into constraint
The principal element that constraint Buddha's warrior attendant wire cutting polysilicon is promoted in battery manufacture.
Buddha's warrior attendant wire cutting polysilicon chip can not obtain the uniform matte in surface with conventional method.To silicon wafer cut by diamond wire system
Suede once had different trials.
Patent CN104328503A discloses a kind of etching method of the polysilicon of Buddha's warrior attendant wire cutting, is primarily characterized in that
Silicon chip surface is handled using mixed acid solution, makes silicon chip surface formation loose structure.
The A of patent CN 104962998 provide a kind of making herbs into wool preprocess method of the silicon chip based on Buddha's warrior attendant wire cutting, and it includes
Following steps：A) dense hydrofluoric acid solution, hydrogenperoxide steam generator, metal salt and water are mixed to get pretreatment fluid；B) by diamond wire
The silicon chip of cutting is placed in progress pretreatment a in the pretreatment fluid, until removing the cutting line on silicon chip substantially.
Patent CN104576830 is provided at a kind of making herbs into wool pretreatment fluid of Buddha's warrior attendant wire cutting polysilicon chip, the making herbs into wool
Managing liquid includes the first treatment fluid and second processing liquid A or B, and the first treatment fluid is the mixed of dense hydrofluoric acid, hydrogen peroxide, metal salt and water
Solution is closed, the treatment fluid A includes nitric acid and highly basic, and the treatment fluid B is the mixed solution of nitric acid, dense hydrofluoric acid and water；On
State making herbs into wool of the preprocess method to silicon wafer cut by diamond wire and produce significant improvement effect, but obtained silicon chip battery is equal on surface
Still there were significant differences compared with mortar wire cutting polysilicon in terms of even property and drop reflectivity.
Patent CN105304734 provides a kind of polycrystalline silicon texturing adjuvant and its application process, and the adjuvant is by silver
Derivant, oxidant, buffer, dispersant and deionized water composition.The adjuvant is added and mixed by dense hydrofluoric acid and nitric acid
In the traditional isotropism Woolen-making liquid for closing liquid composition, then polysilicon chip is immersed in the Woolen-making liquid, silicon chip surface will occur
Isotropic etch and anisotropic etch, so as to obtain in the same direction etch pit of the reflectivity less than 10% and incorgruous inverted pyramid
The silicon face that pattern coexists.
CN104393114 discloses the black silicon preparation method of polycrystalline that a kind of micro-nano is combined suede structure, first by polysilicon
Piece is inserted in etchant solution, prepares the polysilicon chip with micron suede structure；Then it is put into metal ion chemical combination
In thing solution on micron matte depositing metallic nanoparticles, be then placed in etching solution perform etching acquisition have it is micro-
Receive the polysilicon chip of compound suede structure；Cleaning is removed after the metallic particles of remained on surface, is finally placed on alkaline solution and is entered
Row micro-nano is combined matte structural modifications etching.
However, the above method is in addition to use cost is very high, and has the introducing of metal ion, in uniformity and electricity
There is its limitation in aspect of performance, the aberration (aberration particularly between different interfaces) of matte is big after making herbs into wool, it is impossible to industrialization.
The acid etching solution for the acid isotropism process for etching being widely used at present is by hydrofluoric acid (HF), nitric acid
(HN03) mixed according to a certain percentage with pure water.The effect of nitric acid is silicon oxide surface in this method, and the work of hydrofluoric acid
With the oxide layer for being continuous removal silicon face.The maximum feature of this technique is very simple, but can not be applied directly to gold
On firm wire cutting silicon chip.Subject matter is that making herbs into wool back reflection rate is high, and the uniformity of matte is very poor, and the aberration of matte is (particularly not
With the aberration between interface) greatly, the conversion efficiency of particularly silion cell is not high etc..
The content of the invention
Goal of the invention：The first object of the present invention is to provide a kind of chemistry of the optimization agent for the acid making herbs into wool of polysilicon chip
Composition, it can be used as the surface wool manufacturing of acid polysilicon chip, so as to obtain the uniform matte in surface.
The second object of the present invention is to provide above-mentioned optimization agent Chemical composition that and cut in preparation for mortar line or diamond wire
Cut the application in polycrystalline silicon wafer acidity texture preparation liquid.
Technical scheme：The sour making herbs into wool of polysilicon chip that the present invention is provided optimizes the Chemical composition that of agent, and said composition is water-soluble
Liquid, solute is：(1) there is the polymer of thiadiazoles drone salt construction unit；(2) polyalcohol or derivatives thereof.
Preferably, the percetage by weight of the polymer with thiadiazoles drone salt construction unit is 0.05-5%, it is excellent
Selection of land, is 0.1-3.0%；It is described that there is its structure type of the polymer of thiadiazoles drone salt construction unit such as shown in (I)：
Wherein, R is selected from the alkoxy of 2-8 carbon atom, the alkyl of 1-10 carbon atom or replaces alkyl；N is more than 2
Integer.
It is used as another preferred, alkyl of the R selected from 1-5 carbon atom；R is selected from the alkyl of the hydroxyl of 1-4 carbon atom.
As it is another preferably, the percetage by weight of described polyalcohol or derivatives thereof is 0.0001-15%, it is preferable that
For 0.01-5%.
As it is another preferably, described polyalcohol or derivatives thereof is the polyethylene glycol that molecular weight is 400-20000.
As it is another preferably, the solvent of the aqueous solution is deionized water.
Cut present invention also offers the Chemical composition that of the sour making herbs into wool optimization agent of above-mentioned polysilicon chip in mortar line or diamond wire
Cut the application in the sour making herbs into wool of polysilicon chip.
The application, comprises the following steps：The sour making herbs into wool of polysilicon chip described in claim 1 is optimized to the chemical combination of agent
Thing is added in hydrofluoric acid-nitric acid mixed solution, obtains acid Woolen-making liquid；Mortar line or Buddha's warrior attendant wire cutting polysilicon chip are immersed in this
Making herbs into wool in acid Woolen-making liquid.
The application, comprises the following steps：The sour making herbs into wool of the polysilicon chip optimizes the Chemical composition that and hydrofluoric acid-nitre of agent
The mass ratio of sour mixed solution is (0.5-5):100；In the hydrofluoric acid-nitric acid mixed solution, the mass percent of hydrofluoric acid
Concentration is 5-15%, and the mass percent concentration of nitric acid is 35-75%.
The application, making herbs into wool temperature is 5-20 DEG C, and the making herbs into wool time is 60-300S.
Beneficial effect：Chemical composition that preparation and application that the present invention is provided is simple, easily implement, reproducible,
When it is used for mortar line or Buddha's warrior attendant wire cutting polysilicon making herbs into wool, making herbs into wool effect is significantly improved, and it is uniform simultaneously that obtained silicon chip holds face
And reflectivity is low, it is silicon chip film-coated after appearance color it is uniform, when not adding assistant chemical composition compared with matte uniformity
It is improved significantly.
Brief description of the drawings
Fig. 1 is the microscope plan on the Buddha's warrior attendant wire cutting polysilicon chip surface used for solar batteries of non-making herbs into wool.
Fig. 2 is to carry out gold used for solar batteries using the mixed acid solution for the optimization agent Chemical composition that for not adding the present invention
The microscope plan on firm wire cutting polycrystalline silicon texturing surface.
Fig. 3 is to carrying out Buddha's warrior attendant wire cutting polycrystalline used for solar batteries using the mixed acid solution for adding Woolen-making liquid ZHW04
The microscope plan on the surface of silicon wafer wool making.
Fig. 4 is the solar-electricity obtained using the mixed acid solution making herbs into wool for the optimization agent Chemical composition that for not adding the present invention
Microscope plan of the pond after Buddha's warrior attendant wire cutting polysilicon chip plated film.
Fig. 5 is the Buddha's warrior attendant wire cutting used for solar batteries obtained using the mixed acid solution making herbs into wool for adding Woolen-making liquid ZHW04
Microscope plan after polysilicon chip plated film.
Fig. 6 is shown to carrying out mortar wire cutting polycrystalline silicon texturing using the mixed acid solution for adding Woolen-making liquid ZHW09
Surface topography microscope plan.
Bibliographic reference
CN102816297A, polymer based on connection diazosulfide and its preparation method and application
Qian Yanbing, synthesis, structure and the performance of the new conjugated polymer containing thiazole ring,《University Of Ningbo》, 2012
Embodiment
The invention will be further elucidated with reference to specific embodiments.It should be understood that these embodiments are merely to illustrate this hair
Bright rather than limitation the scope of the present invention.In addition, it is to be understood that after present disclosure has been read, those skilled in the art
The present invention can be made various changes or modifications, these equivalent form of values are equally applicable to the application appended claims and limited
Scope.
Embodiment 1
The Chemical composition that the sour making herbs into wool of a collection of polysilicon chip optimizes agent is prepared, its formula is shown in Table 1.
Table 1
In composition above, surplus is deionized water.
Embodiment 2
The acid Woolen-making liquid of configuration：
Embodiment 3
Mortar line or Buddha's warrior attendant wire cutting polysilicon chip are immersed in making herbs into wool in the acid Woolen-making liquid of embodiment 2, making herbs into wool temperature
For 5-20 DEG C, the making herbs into wool time is 60-300S.
For example：
(1) Buddha's warrior attendant wire cutting polysilicon chip used for solar batteries is taken, is immersed in respectively in acid Woolen-making liquid and carries out making herbs into wool, is made
Suede condition：
| Example number | Woolen-making liquid | Making herbs into wool temperature DEG C | Making herbs into wool time S |
| 01 | ZRY01 | 10 | 180 |
| 02 | ZRY02 | 15 | 180 |
| 03 | ZRY03 | 10 | 180 |
| 04 | ZRY04 | 15 | 180 |
| 05 | ZRY05 | 10 | 180 |
| 06 | ZRY06 | 15 | 180 |
| 07 | ZRY07 | 10 | 180 |
| 08 | ZRY08 | 15 | 180 |
| 09 | ZRY09 | 10 | 180 |
| 10 | ZRY10 | 20 | 60 |
| 11 | ZRY11 | 5 | 300 |
| 12 | ZRY12 | 20 | 120 |
| 13 | ZRY13 | 5 | 240 |
Fig. 1 shows the Buddha's warrior attendant wire cutting polysilicon chip surface topography used for solar batteries of non-making herbs into wool, and it is presented very not
Uniform surface topography.
Fig. 2 is shown carries out solar cell using the mixed acid solution for the optimization agent Chemical composition that for not adding the present invention
With the surface topography of Buddha's warrior attendant wire cutting polycrystalline silicon texturing, its surface uniformity is very poor.
Fig. 3 is shown to carrying out Buddha's warrior attendant wire cutting used for solar batteries using the mixed acid solution for adding Woolen-making liquid ZHW04
The surface topography of polycrystalline silicon texturing, its surface uniformity is very good；As being obtained using Woolen-making liquid ZRY01-ZRY13
As a result.
From Fig. 1 to 3, the corrosion matte formed using the Woolen-making liquid making herbs into wool of the present invention is distributed than more uniform.
Fig. 4 shows the sun obtained using the mixed acid solution making herbs into wool for the optimization agent Chemical composition that for not adding the present invention
Can the battery follow-up coating process of Buddha's warrior attendant wire cutting polysilicon chip, it can clearly be seen that the cell piece that conventional process for etching is obtained
There is serious color difference, will be unable to put into production use.
Fig. 5 shows the diamond wire used for solar batteries obtained using the mixed acid solution making herbs into wool for adding Woolen-making liquid ZHW04
Cut the follow-up coating process of polysilicon chip, it is obvious that obtained plated film cell piece surface has good uniformity.
Fig. 6 is shown to carrying out mortar wire cutting polycrystalline silicon texturing using the mixed acid solution for adding Woolen-making liquid ZHW09
Surface topography, its surface uniformity is very good；The same result is obtained using Woolen-making liquid ZRY01-ZRY13.
The embodiment of the present invention has fully been indicated above.It is pointed out that being familiar with the technology in the field
Scope of any change that personnel are done to the embodiment of the present invention all without departing from claims of the present invention.Accordingly
Ground, the scope of claim of the invention is also not limited only to previous embodiment.
Claims (10)
1. polysilicon chip acid making herbs into wool optimizes the Chemical composition that of agent, it is characterised in that：Said composition is the aqueous solution, and solute is：(1)
Polymer with thiadiazoles drone salt construction unit；(2) polyalcohol or derivatives thereof.
2. the sour making herbs into wool of polysilicon chip according to claim 1 optimizes the Chemical composition that of agent, it is characterised in that：It is described to have
The percetage by weight of the polymer of thiadiazoles drone salt construction unit is 0.05-5%, it is preferable that be 0.1-3.0%；
It is described that there is its structure type of the polymer of thiadiazoles drone salt construction unit such as shown in (I)：
Wherein, R is selected from the alkoxy of 2-8 carbon atom, the alkyl of 1-10 carbon atom or replaces alkyl；N for more than 2 it is whole
Number.
3. the sour making herbs into wool of polysilicon chip according to claim 1 optimizes the Chemical composition that of agent, it is characterised in that：R is selected from 1-5
The alkyl of individual carbon atom；R is selected from the alkyl of the hydroxyl of 1-4 carbon atom.
4. the sour making herbs into wool of polysilicon chip according to claim 1 optimizes the Chemical composition that of agent, it is characterised in that：It is described polynary
The percetage by weight of alcohol or derivatives thereof is 0.0001-15%, it is preferable that be 0.01-5%.
5. the sour making herbs into wool of polysilicon chip according to claim 1 optimizes the Chemical composition that of agent, it is characterised in that：It is described polynary
Alcohol or derivatives thereof is the polyethylene glycol that molecular weight is 400-20000.
6. the sour making herbs into wool of polysilicon chip according to claim 1 optimizes the Chemical composition that of agent, it is characterised in that：The aqueous solution
Solvent is deionized water.
7. the Chemical composition that of the sour making herbs into wool optimization agent of polysilicon chip described in claim 1 is in mortar line or Buddha's warrior attendant wire cutting polycrystalline
Application in silicon chip acid making herbs into wool.
8. application as claimed in claim 5, it is characterised in that：Comprise the following steps：By the polysilicon chip described in claim 1
The Chemical composition that of sour making herbs into wool optimization agent is added in hydrofluoric acid-nitric acid mixed solution, obtains acid Woolen-making liquid；By mortar line or Buddha's warrior attendant
Wire cutting polysilicon chip is immersed in making herbs into wool in the acid Woolen-making liquid.
9. application as claimed in claim 5, it is characterised in that：Comprise the following steps：The sour making herbs into wool optimization agent of the polysilicon chip
Chemical composition that and hydrofluoric acid-nitric acid mixed solution mass ratio be (0.5-5):100；The hydrofluoric acid-nitric acid mixing is molten
In liquid, the mass percent concentration of hydrofluoric acid is 5-15%, and the mass percent concentration of nitric acid is 35-75%.
10. application as claimed in claim 5, it is characterised in that：Making herbs into wool temperature is 5-20 DEG C, and the making herbs into wool time is 60-300S.
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| CN201710358791.9A CN107217306B (en) | 2017-05-19 | 2017-05-19 | Chemical composition of polycrystalline silicon wafer acid texturing optimizing agent and application thereof |
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| CN201710358791.9A CN107217306B (en) | 2017-05-19 | 2017-05-19 | Chemical composition of polycrystalline silicon wafer acid texturing optimizing agent and application thereof |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN102330154A (en) * | 2011-07-27 | 2012-01-25 | 常州时创能源科技有限公司 | Acidic texturing solution for texturing of polycrystalline silicon chip and using method thereof |
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| CN101292362A (en) * | 2005-08-12 | 2008-10-22 | 凯博瑞奥斯技术公司 | Nanowires-based transparent conductors |
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| CN103890139A (en) * | 2011-10-19 | 2014-06-25 | 东友精细化工有限公司 | Texture etching solution composition and texture etching method of crystalline silicon wafers |
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