CN106521634A - Auxiliary chemical composition used for monocrystalline silicon or polycrystalline silicon acidic texturization and application thereof - Google Patents
Auxiliary chemical composition used for monocrystalline silicon or polycrystalline silicon acidic texturization and application thereof Download PDFInfo
- Publication number
- CN106521634A CN106521634A CN201610905268.9A CN201610905268A CN106521634A CN 106521634 A CN106521634 A CN 106521634A CN 201610905268 A CN201610905268 A CN 201610905268A CN 106521634 A CN106521634 A CN 106521634A
- Authority
- CN
- China
- Prior art keywords
- compositionss
- wool
- parts
- glycol
- making herbs
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000126 substance Substances 0.000 title claims abstract description 39
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 36
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 5
- 239000000203 mixture Substances 0.000 title abstract description 9
- 230000002378 acidificating effect Effects 0.000 title abstract description 3
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 51
- 239000010703 silicon Substances 0.000 claims abstract description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 50
- 150000004676 glycans Chemical class 0.000 claims abstract description 14
- 229920001282 polysaccharide Polymers 0.000 claims abstract description 14
- 239000005017 polysaccharide Substances 0.000 claims abstract description 14
- 239000002253 acid Substances 0.000 claims description 63
- 210000002268 wool Anatomy 0.000 claims description 47
- 235000008216 herbs Nutrition 0.000 claims description 45
- 239000007788 liquid Substances 0.000 claims description 29
- 229920005591 polysilicon Polymers 0.000 claims description 29
- 239000000243 solution Substances 0.000 claims description 27
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 19
- 229910017604 nitric acid Inorganic materials 0.000 claims description 19
- 229920002153 Hydroxypropyl cellulose Polymers 0.000 claims description 18
- 235000010977 hydroxypropyl cellulose Nutrition 0.000 claims description 18
- 150000005846 sugar alcohols Polymers 0.000 claims description 17
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 16
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 10
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 9
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 6
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 claims description 6
- 229920001515 polyalkylene glycol Polymers 0.000 claims description 6
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 claims description 5
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 claims description 5
- PYMYPHUHKUWMLA-UHFFFAOYSA-N arabinose Natural products OCC(O)C(O)C(O)C=O PYMYPHUHKUWMLA-UHFFFAOYSA-N 0.000 claims description 5
- SRBFZHDQGSBBOR-UHFFFAOYSA-N beta-D-Pyranose-Lyxose Natural products OC1COC(O)C(O)C1O SRBFZHDQGSBBOR-UHFFFAOYSA-N 0.000 claims description 5
- 239000011259 mixed solution Substances 0.000 claims description 5
- IDQBJILTOGBZCR-UHFFFAOYSA-N 1-butoxypropan-1-ol Chemical compound CCCCOC(O)CC IDQBJILTOGBZCR-UHFFFAOYSA-N 0.000 claims description 4
- 229920000945 Amylopectin Polymers 0.000 claims description 4
- SRBFZHDQGSBBOR-IOVATXLUSA-N D-xylopyranose Chemical compound O[C@@H]1COC(O)[C@H](O)[C@H]1O SRBFZHDQGSBBOR-IOVATXLUSA-N 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 241001597008 Nomeidae Species 0.000 claims description 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 4
- 235000010418 carrageenan Nutrition 0.000 claims description 4
- 239000000679 carrageenan Substances 0.000 claims description 4
- 229920001525 carrageenan Polymers 0.000 claims description 4
- 229940113118 carrageenan Drugs 0.000 claims description 4
- 150000004292 cyclic ethers Chemical class 0.000 claims description 4
- -1 dihydroxymethyl Hexamethylene Chemical group 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- UHVMMEOXYDMDKI-JKYCWFKZSA-L zinc;1-(5-cyanopyridin-2-yl)-3-[(1s,2s)-2-(6-fluoro-2-hydroxy-3-propanoylphenyl)cyclopropyl]urea;diacetate Chemical compound [Zn+2].CC([O-])=O.CC([O-])=O.CCC(=O)C1=CC=C(F)C([C@H]2[C@H](C2)NC(=O)NC=2N=CC(=CC=2)C#N)=C1O UHVMMEOXYDMDKI-JKYCWFKZSA-L 0.000 claims description 4
- AIDLAEPHWROGFI-UHFFFAOYSA-N 2-methylbenzene-1,3-dicarboxylic acid Chemical class CC1=C(C(O)=O)C=CC=C1C(O)=O AIDLAEPHWROGFI-UHFFFAOYSA-N 0.000 claims description 3
- 229920001817 Agar Polymers 0.000 claims description 3
- 229920000856 Amylose Polymers 0.000 claims description 3
- 229920002498 Beta-glucan Polymers 0.000 claims description 3
- 229920002134 Carboxymethyl cellulose Polymers 0.000 claims description 3
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 claims description 3
- FBPFZTCFMRRESA-KVTDHHQDSA-N D-Mannitol Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-KVTDHHQDSA-N 0.000 claims description 3
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 claims description 3
- HMFHBZSHGGEWLO-SOOFDHNKSA-N D-ribofuranose Chemical compound OC[C@H]1OC(O)[C@H](O)[C@@H]1O HMFHBZSHGGEWLO-SOOFDHNKSA-N 0.000 claims description 3
- 229920002527 Glycogen Polymers 0.000 claims description 3
- 229930195725 Mannitol Natural products 0.000 claims description 3
- 239000002202 Polyethylene glycol Substances 0.000 claims description 3
- PYMYPHUHKUWMLA-LMVFSUKVSA-N Ribose Natural products OC[C@@H](O)[C@@H](O)[C@@H](O)C=O PYMYPHUHKUWMLA-LMVFSUKVSA-N 0.000 claims description 3
- TVXBFESIOXBWNM-UHFFFAOYSA-N Xylitol Natural products OCCC(O)C(O)C(O)CCO TVXBFESIOXBWNM-UHFFFAOYSA-N 0.000 claims description 3
- 239000008272 agar Substances 0.000 claims description 3
- 235000010419 agar Nutrition 0.000 claims description 3
- HMFHBZSHGGEWLO-UHFFFAOYSA-N alpha-D-Furanose-Ribose Natural products OCC1OC(O)C(O)C1O HMFHBZSHGGEWLO-UHFFFAOYSA-N 0.000 claims description 3
- PYMYPHUHKUWMLA-WDCZJNDASA-N arabinose Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)C=O PYMYPHUHKUWMLA-WDCZJNDASA-N 0.000 claims description 3
- 235000019437 butane-1,3-diol Nutrition 0.000 claims description 3
- 235000010948 carboxy methyl cellulose Nutrition 0.000 claims description 3
- 229920003064 carboxyethyl cellulose Polymers 0.000 claims description 3
- 229960005082 etohexadiol Drugs 0.000 claims description 3
- 229930182830 galactose Natural products 0.000 claims description 3
- 239000000594 mannitol Substances 0.000 claims description 3
- 235000010355 mannitol Nutrition 0.000 claims description 3
- HEBKCHPVOIAQTA-UHFFFAOYSA-N meso ribitol Natural products OCC(O)C(O)C(O)CO HEBKCHPVOIAQTA-UHFFFAOYSA-N 0.000 claims description 3
- 229920000609 methyl cellulose Polymers 0.000 claims description 3
- 239000001923 methylcellulose Substances 0.000 claims description 3
- 235000010981 methylcellulose Nutrition 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 239000001814 pectin Substances 0.000 claims description 3
- 235000010987 pectin Nutrition 0.000 claims description 3
- 229920001277 pectin Polymers 0.000 claims description 3
- JYVLIDXNZAXMDK-UHFFFAOYSA-N pentan-2-ol Chemical compound CCCC(C)O JYVLIDXNZAXMDK-UHFFFAOYSA-N 0.000 claims description 3
- 229920001223 polyethylene glycol Polymers 0.000 claims description 3
- 229920000151 polyglycol Polymers 0.000 claims description 3
- 239000010695 polyglycol Substances 0.000 claims description 3
- 229920001451 polypropylene glycol Polymers 0.000 claims description 3
- 235000010413 sodium alginate Nutrition 0.000 claims description 3
- 239000000600 sorbitol Substances 0.000 claims description 3
- QXJQHYBHAIHNGG-UHFFFAOYSA-N trimethylolethane Chemical compound OCC(C)(CO)CO QXJQHYBHAIHNGG-UHFFFAOYSA-N 0.000 claims description 3
- 239000000811 xylitol Substances 0.000 claims description 3
- HEBKCHPVOIAQTA-SCDXWVJYSA-N xylitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)CO HEBKCHPVOIAQTA-SCDXWVJYSA-N 0.000 claims description 3
- 235000010447 xylitol Nutrition 0.000 claims description 3
- 229960002675 xylitol Drugs 0.000 claims description 3
- FYGDTMLNYKFZSV-URKRLVJHSA-N (2s,3r,4s,5s,6r)-2-[(2r,4r,5r,6s)-4,5-dihydroxy-2-(hydroxymethyl)-6-[(2r,4r,5r,6s)-4,5,6-trihydroxy-2-(hydroxymethyl)oxan-3-yl]oxyoxan-3-yl]oxy-6-(hydroxymethyl)oxane-3,4,5-triol Chemical compound O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@H]1OC1[C@@H](CO)O[C@@H](OC2[C@H](O[C@H](O)[C@H](O)[C@H]2O)CO)[C@H](O)[C@H]1O FYGDTMLNYKFZSV-URKRLVJHSA-N 0.000 claims description 2
- 229940058015 1,3-butylene glycol Drugs 0.000 claims description 2
- IXPNQXFRVYWDDI-UHFFFAOYSA-N 1-methyl-2,4-dioxo-1,3-diazinane-5-carboximidamide Chemical compound CN1CC(C(N)=N)C(=O)NC1=O IXPNQXFRVYWDDI-UHFFFAOYSA-N 0.000 claims description 2
- GTACSIONMHMRPD-UHFFFAOYSA-N 2-[4-[2-(benzenesulfonamido)ethylsulfanyl]-2,6-difluorophenoxy]acetamide Chemical compound C1=C(F)C(OCC(=O)N)=C(F)C=C1SCCNS(=O)(=O)C1=CC=CC=C1 GTACSIONMHMRPD-UHFFFAOYSA-N 0.000 claims description 2
- 101710130081 Aspergillopepsin-1 Proteins 0.000 claims description 2
- 229920002101 Chitin Polymers 0.000 claims description 2
- 102100031007 Cytosolic non-specific dipeptidase Human genes 0.000 claims description 2
- 229940023476 agar Drugs 0.000 claims description 2
- 150000001298 alcohols Chemical class 0.000 claims description 2
- 150000004703 alkoxides Chemical class 0.000 claims description 2
- 229940106691 bisphenol a Drugs 0.000 claims description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 claims description 2
- 239000001768 carboxy methyl cellulose Substances 0.000 claims description 2
- 239000008112 carboxymethyl-cellulose Substances 0.000 claims description 2
- 230000008859 change Effects 0.000 claims description 2
- FBPFZTCFMRRESA-GUCUJZIJSA-N galactitol Chemical compound OC[C@H](O)[C@@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-GUCUJZIJSA-N 0.000 claims description 2
- 229940096919 glycogen Drugs 0.000 claims description 2
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 claims description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 2
- 239000001863 hydroxypropyl cellulose Substances 0.000 claims description 2
- 229940071676 hydroxypropylcellulose Drugs 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 229960000292 pectin Drugs 0.000 claims description 2
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 claims description 2
- UWJJYHHHVWZFEP-UHFFFAOYSA-N pentane-1,1-diol Chemical compound CCCCC(O)O UWJJYHHHVWZFEP-UHFFFAOYSA-N 0.000 claims description 2
- 229920000909 polytetrahydrofuran Polymers 0.000 claims description 2
- 230000003252 repetitive effect Effects 0.000 claims description 2
- 239000000661 sodium alginate Substances 0.000 claims description 2
- 229940005550 sodium alginate Drugs 0.000 claims description 2
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 claims description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims 2
- LNAZSHAWQACDHT-XIYTZBAFSA-N (2r,3r,4s,5r,6s)-4,5-dimethoxy-2-(methoxymethyl)-3-[(2s,3r,4s,5r,6r)-3,4,5-trimethoxy-6-(methoxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6r)-4,5,6-trimethoxy-2-(methoxymethyl)oxan-3-yl]oxyoxane Chemical compound CO[C@@H]1[C@@H](OC)[C@H](OC)[C@@H](COC)O[C@H]1O[C@H]1[C@H](OC)[C@@H](OC)[C@H](O[C@H]2[C@@H]([C@@H](OC)[C@H](OC)O[C@@H]2COC)OC)O[C@@H]1COC LNAZSHAWQACDHT-XIYTZBAFSA-N 0.000 claims 1
- 150000001720 carbohydrates Chemical class 0.000 claims 1
- 235000014633 carbohydrates Nutrition 0.000 claims 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 claims 1
- 235000013399 edible fruits Nutrition 0.000 claims 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 claims 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 1
- 229940059574 pentaerithrityl Drugs 0.000 claims 1
- 239000001294 propane Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 13
- 229910003460 diamond Inorganic materials 0.000 abstract description 5
- 239000010432 diamond Substances 0.000 abstract description 5
- 238000002360 preparation method Methods 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000013467 fragmentation Methods 0.000 abstract 1
- 238000006062 fragmentation reaction Methods 0.000 abstract 1
- 229920005862 polyol Polymers 0.000 abstract 1
- 150000003077 polyols Chemical class 0.000 abstract 1
- 238000002310 reflectometry Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 35
- 239000008367 deionised water Substances 0.000 description 30
- 229910021641 deionized water Inorganic materials 0.000 description 30
- 238000005520 cutting process Methods 0.000 description 19
- 238000005530 etching Methods 0.000 description 7
- 239000012530 fluid Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 230000004075 alteration Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002671 adjuvant Substances 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000004375 Dextrin Substances 0.000 description 2
- 229920001353 Dextrin Polymers 0.000 description 2
- 241000628997 Flos Species 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229930091371 Fructose Natural products 0.000 description 2
- RFSUNEUAIZKAJO-ARQDHWQXSA-N Fructose Chemical compound OC[C@H]1O[C@](O)(CO)[C@@H](O)[C@@H]1O RFSUNEUAIZKAJO-ARQDHWQXSA-N 0.000 description 2
- 239000005715 Fructose Substances 0.000 description 2
- 229920002472 Starch Polymers 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- VSSAZBXXNIABDN-UHFFFAOYSA-N cyclohexylmethanol Chemical compound OCC1CCCCC1 VSSAZBXXNIABDN-UHFFFAOYSA-N 0.000 description 2
- 235000019425 dextrin Nutrition 0.000 description 2
- 229960002163 hydrogen peroxide Drugs 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004570 mortar (masonry) Substances 0.000 description 2
- 239000008107 starch Substances 0.000 description 2
- 235000019698 starch Nutrition 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 description 1
- 239000004258 Ethoxyquin Substances 0.000 description 1
- DJOWTWWHMWQATC-KYHIUUMWSA-N Karpoxanthin Natural products CC(=C/C=C/C=C(C)/C=C/C=C(C)/C=C/C1(O)C(C)(C)CC(O)CC1(C)O)C=CC=C(/C)C=CC2=C(C)CC(O)CC2(C)C DJOWTWWHMWQATC-KYHIUUMWSA-N 0.000 description 1
- 101000905241 Mus musculus Heart- and neural crest derivatives-expressed protein 1 Proteins 0.000 description 1
- 208000031481 Pathologic Constriction Diseases 0.000 description 1
- DUFKCOQISQKSAV-UHFFFAOYSA-N Polypropylene glycol (m w 1,200-3,000) Chemical class CC(O)COC(C)CO DUFKCOQISQKSAV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- FRYDSOYOHWGSMD-UHFFFAOYSA-N [C].O Chemical compound [C].O FRYDSOYOHWGSMD-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- WQZGKKKJIJFFOK-PHYPRBDBSA-N alpha-D-galactose Chemical compound OC[C@H]1O[C@H](O)[C@H](O)[C@@H](O)[C@H]1O WQZGKKKJIJFFOK-PHYPRBDBSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910021418 black silicon Inorganic materials 0.000 description 1
- GZSSFSARCMSPPW-UHFFFAOYSA-N butane-2,2-diol Chemical class CCC(C)(O)O GZSSFSARCMSPPW-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229940093500 ethoxyquin Drugs 0.000 description 1
- DECIPOUIJURFOJ-UHFFFAOYSA-N ethoxyquin Chemical compound N1C(C)(C)C=C(C)C2=CC(OCC)=CC=C21 DECIPOUIJURFOJ-UHFFFAOYSA-N 0.000 description 1
- 235000019285 ethoxyquin Nutrition 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 239000013528 metallic particle Substances 0.000 description 1
- VUZPPFZMUPKLLV-UHFFFAOYSA-N methane;hydrate Chemical compound C.O VUZPPFZMUPKLLV-UHFFFAOYSA-N 0.000 description 1
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical group CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 210000001215 vagina Anatomy 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Treatments For Attaching Organic Compounds To Fibrous Goods (AREA)
Abstract
The invention provides an auxiliary chemical composition used for monocrystalline silicon or polycrystalline silicon acidic texturization. The auxiliary chemical composition includes: polysaccharide or its derivative, polyol or its derivative. The preparation and use method of the auxiliary chemical composition is simple and easy to implement, and has good repeatability. When used for diamond wire-cut monocrystalline silicon or polycrystalline silicon texturization, the auxiliary chemical composition can increase the texturization temperature, and at the same time can greatly improve the surface texturization uniformity, and the prepared silicon chip has the characteristics of low reflectivity, clean surface, low fragmentation rate, and uniform color after coating, thus greatly improving the photoelectric conversion efficiency of silicon cells.
Description
Technical field
The invention belongs to new energy field, more particularly to a kind of monocrystal silicon or polysilicon surface system for Buddha's warrior attendant wire cutting
The assistant chemical compositionss of floss, further relate to the assistant chemical compositionss and are preparing for Buddha's warrior attendant wire cutting monocrystal silicon or polysilicon system
Application in the acid Woolen-making liquid of floss.
Background technology
The reflection of silicon chip surface incident illumination greatly reduces the efficiency (electric current) of silicon solar cell.If silicon cell table
Face does not carry out antireflective process, then about 40% sunlight will lose, and antireflective treatment effect is in whole sun power spectrum
With must be effective in various incident angle of light.
At present, the antireflective on crystal silicon photovoltaic cell is by several different technologies.For monocrystal silicon, anisotropy
The reflectance of (pyramid) texture etching silicon single crystal is reduced to towards 100 single crystal silicons on about 5-15%, but main close
The incident illumination at 90 ° of angles rather than the reflectance at low incidence angle;This technology can also consume substantial amounts of silicon materials, make it actual
It is applied to thin film silicon solar cell.For polysilicon, pitting shape matte is obtained using acid isotropic etch method, table is made
Face reflectance is reduced to 15-20%.With the development of silicon chip cutting technique, silicon wafer cut by diamond wire technology is due to its cost and ring
Replacement mortar line is become guarantor's advantage the main flow of silicon chip production technology;However, Buddha's warrior attendant wire cutting polycrystalline silicon texturing becomes constraint
The principal element that constraint Buddha's warrior attendant wire cutting polysilicon is promoted in battery manufacture.
The monocrystal silicon or polysilicon of Buddha's warrior attendant wire cutting cannot obtain the uniform matte in surface with conventional method.Diamond wire is cut
Cutting silicon wafer wool making once had different trials.
Patent CN104328503A discloses a kind of etching method of the polysilicon of Buddha's warrior attendant wire cutting, and which is mainly using mixing
Acid solution is processed to silicon chip surface, makes silicon chip surface form loose structure.
Patent CN104962998A provides a kind of making herbs into wool preprocess method of the silicon chip based on Buddha's warrior attendant wire cutting, it include as
Lower step:A) dense hydrofluoric acid solution, hydrogenperoxide steam generator, slaine and water are mixed to get into pretreatment fluid;B) diamond wire is cut
The silicon chip for cutting is placed in the pretreatment fluid carries out pretreatment a, until the basic cutting stricture of vagina removed on silicon chip.
Patent CN104576830 provides a kind of making herbs into wool pretreatment fluid of Buddha's warrior attendant wire cutting polysilicon chip, at the making herbs into wool
Reason liquid includes the first treatment fluid and second processing liquid A or B, and the first treatment fluid is the mixed of dense Fluohydric acid., hydrogen peroxide, slaine and water
Solution is closed, the treatment fluid A includes nitric acid and highly basic, mixed solutions of the treatment fluid B for nitric acid, dense Fluohydric acid. and water;On
State making herbs into wool of the preprocess method to silicon wafer cut by diamond wire and produce significant improvement effect, but the silicon chip battery for obtaining is equal on surface
In terms of even property and drop reflectance, compared with mortar wire cutting polysilicon, still there were significant differences.
Patent CN105304734 provides a kind of polycrystalline silicon texturing adjuvant and its application process, and the adjuvant is by silver
Derivant, oxidant, buffer agent, dispersant and deionized water composition.The adjuvant is added and is mixed by dense Fluohydric acid. and nitric acid
Close in traditional isotropism Woolen-making liquid of liquid composition, then immerse polysilicon chip in the Woolen-making liquid, silicon chip surface will occur
Isotropic etch and anisotropic etch, so that obtained in the same direction etch pit of the reflectance less than 10% and incorgruous inverted pyramid
The silicon face that pattern coexists.
CN104393114 discloses a kind of black silicon preparation method of polycrystalline of the compound suede structure of micro-nano, first by polysilicon
Piece is inserted in etchant solution, prepares the polysilicon chip with micron suede structure;Then it is put into metal ion chemical combination
In thing solution on micron matte depositing metallic nanoparticles, perform etching acquisition in being then placed on etching solution with micro-
Receive the polysilicon chip of compound suede structure;After cleaning removes the metallic particles of remained on surface, finally it is placed on alkaline solution and enters
The compound matte structural modifications etching of row micro-nano.
However, the above method is in addition to use cost is very high, metal ion is also introduced, and in uniformity and electrically
There is its limitation in energy aspect, the aberration of matte big (aberration between particularly different interfaces) after making herbs into wool, it is impossible to industrialization.
The acid etching solution of the acid isotropism process for etching being widely used at present is by Fluohydric acid. (HF), nitric acid
(HN03) mixed with pure water according to a certain percentage.In the method, the effect of nitric acid is silicon oxide surface, and the work of Fluohydric acid.
With the oxide layer for being constantly removal silicon face.The maximum feature of this technique be it is very simple, but gold cannot be applied directly to
On just wire cutting silicon chip;Its subject matter is that making herbs into wool back reflection rate is high, and the uniformity of matte is very poor, and the aberration of matte is big (especially
It is the aberration between different interfaces), the conversion efficiency of particularly silion cell is not high etc..
The content of the invention
Technical problem:In order to solve the defect of prior art, the invention provides a kind of be used for monocrystal silicon or polycrystalline silicic acid
The assistant chemical compositionss of property making herbs into wool.
Technical scheme:The present invention provide it is a kind of for monocrystal silicon or polysilicon acidity making herbs into wool assistant chemical compositionss,
At least include:Polysaccharide or derivatives thereof, polyhydric alcohol or derivatives thereof.
Preferably, including 0.05-75 part polysaccharide or derivatives thereof, 0.0001-25 part polyhydric alcohol or derivatives thereof, with weight
Part meter.
It is highly preferred that be 0.1-35 part polysaccharide or derivatives thereof including percetage by weight, 0.01-10 parts polyhydric alcohol or its spread out
Biology, in parts by weight.
As another kind of preferred, the macromolecule carbon water that the polysaccharide is joined together to form by glycosidic bond for repetitives
Compound;These structures are probably linear, it is also possible to containing different degrees of branch;Polysaccharide may include non-carbon hydrate
Thing unit;The polysaccharide at least includes amylose, amylopectin, pectin, glycogen, agar, sodium alginate, carrageenan, carapace
Element, beta glucan, dextrin, carboxymethyl cellulose, carboxyethyl cellulose, hydroxy propyl cellulose, methylcellulose, ribose, wood
One or more in sugar, arabinose, Fructose, galactose;The combination of one typical above-mentioned polysaccharide is propping up for starch composition
Chain starch and amylose;The molecular weight of the polysaccharide is more than 20000, preferably 20,000 to 1, between 000,000.
As another kind of preferred, one or more combination of the polyhydric alcohol at least including binary to hexahydroxylic alcohols;It is preferred that
Ground, polyhydric alcohol include ethylene glycol, 1,2-PD, 1,3-PD, BDO, 1,3 butylene glycol, neopentyl glycol, penta 2
Alcohol, ethylene glycol, 1,8- ethohexadiol, Isosorbide-5-Nitrae-butynediols, bisphenol-A, diglycol, triethylene-glycol, a contracting dipropyl two
Alcohol, tripropylene glycol, Propylene Glycol, 2- ethyls-BDO, 1,5-PD, 2- methyl isophthalic acids, 5- pentanediols, 1,6- oneself
Glycol, hydroxymethyl-cyclohexane, neopentyl glycol, trimethylolethane, tri hydroxy methyl butane, trimethylolpropane, glycerol, season penta
Tetrol, double trimethylolpropane, erithritol, xylitol, Mannitol, butoxypropanol, galactitol and Sorbitol;It is described many
Addition polymers of the derivant of first alcohol for the alkoxide, poly alkylene glycol and cyclic ethers of polyhydric alcohol;Preferably, polyhydric alcohol is derivative
Thing includes that the addition polymers of ethoxyquin, the polyhydric alcohol of the third oxidation and PEPA, the poly alkylene glycol and cyclic ethers include gathering
Tetrahydrofuran;The poly alkylene glycol includes Polyethylene Glycol, polypropylene glycol and Polyglycol 166-450.
Present invention also offers application of the above-mentioned assistant chemical compositionss in monocrystal silicon or polysilicon making herbs into wool.
The application, assistant chemical compositionss are added in Fluohydric acid., the mixed solution of nitric acid, acid Woolen-making liquid is obtained;Again
Monocrystalline silicon piece or polysilicon chip are immersed in acid Woolen-making liquid carries out making herbs into wool.
Preferably, the assistant chemical compositionss are (0.05-15) with the mass ratio of Fluohydric acid., the mixed solution of nitric acid:
100;In the Fluohydric acid., the mixed solution of nitric acid, the mass percent concentration of Fluohydric acid. is 5-30%, the quality percentage of nitric acid
Specific concentration is 25-75%;Making herbs into wool temperature is 5-30 DEG C, and the making herbs into wool time is 60-300S.
Beneficial effect:The assistant chemical compositionss preparation and application that the present invention is provided simply, is easily implemented, repeatability
It is good;Which can improve making herbs into wool temperature, while being greatly improved surface when for Buddha's warrior attendant wire cutting monocrystal silicon or polysilicon making herbs into wool
Making herbs into wool uniformity, obtained silicon chip reflectance is low, surface cleaning, fragment rate are low, and the color even after plated film can be greatly improved
The photoelectric transformation efficiency of silion cell.
Specifically, carried out after silicon chip surface making herbs into wool using the assistant chemical compositionss, the whole face uniform color of silicon chip, silicon chip
Surface formed be evenly distributed, it is narrow and " etch pit " of depth;Compared with when assistant chemical compositionss are not added, etch pit size is more
Tiny, distribution is more uniform, and the amount of silicon being corroded is less.The use of the assistant chemical compositionss can significantly reduce silicon chip
Reflectance, average reflectance be less than 20%.Obtained silicon chip is used in solaode, it is possible to increase the finished product of cell piece
Rate, while can lift the short circuit current of cell piece and increase the fill factor, curve factor of cell piece, and then greatly improves solaode
The photoelectric transformation efficiency of piece.
Description of the drawings
Fig. 1 is the scanning electron microscope plane graph before Buddha's warrior attendant wire cutting polycrystalline silicon surface wool manufacturing.
Fig. 2 is that sweeping for silicon chip surface matte obtained in the acid Woolen-making liquid comprising assistant chemical compositionss of the present invention is not used
Retouch Electronic Speculum plane graph.
Fig. 3 is the scanning using silicon chip surface matte obtained in the acid Woolen-making liquid comprising assistant chemical compositionss of the present invention
Electronic Speculum plane graph.
Fig. 4 be not used comprising assistant chemical compositionss of the present invention acid Woolen-making liquid obtained in it is silicon chip film-coated after outward appearance
Figure.
Fig. 5 be using comprising assistant chemical compositionss of the present invention acid Woolen-making liquid obtained in it is silicon chip film-coated after outward appearance
Figure.
Specific embodiment
With reference to specific embodiment, the present invention is expanded on further.It should be understood that these embodiments are merely to illustrate this
Bright rather than restriction the scope of the present invention.In addition, it is to be understood that after present disclosure has been read, those skilled in the art
The present invention can be made various changes or modifications, these equivalent form of values equally fall within what the application appended claims were limited
Scope.
100 parts of assistant chemical compositionss (in parts by weight) are configured by formula as below:
Compositionss 1:1.5 parts of glycogens, 2.7 parts of agar;3.1 parts of 1,3-PDs, 0.8 part of Sorbitol;Deionized water is mended
Foot stops 100 parts of gross weight
Compositionss 2:1.9 parts of carboxymethyl celluloses;0.3 part of xylitol, 2.5 parts of Mannitol;Deionized water supplies only gross weight
100 parts of amount
Compositionss 3:2.9 parts of sodium alginates, 0.25 part of carrageenan;4.2 parts of methyl propanediols;Deionized water supplies only gross weight
100 parts of amount
Compositionss 4:3.9 parts of beta glucans;1.7 parts of polypropylene glycols;0.7 part of Polyethylene Glycol;Deionized water supplies only gross weight
100 parts of amount
Compositionss 5:7.1 portions of galactose, 1.1 parts of Fructose;0.2 part of glycerol, 0.68 part of BDO;Deionized water is supplied
Only 100 parts of gross weight
Compositionss 6:2.2 parts of ribose, 3.9 portions of arabinose;5.1 parts of butoxypropanols;Deionized water supplies only gross weight
100 parts
Compositionss 7:0.88 part of xylose, 0.7 part of carrageenan;3.3 parts of butoxypropanols, 6.2 parts of ethylene glycol;Deionized water is mended
Foot stops 100 parts of gross weight
Compositionss 8:1.7 parts of amylopectins;4.3 parts of galactitols;Deionized water supplies only 100 parts of gross weight
Compositionss 9:45 parts of amylosies, 30 parts of amylopectins;5 parts of 1,2-PDs, 5 parts of 1,3 butylene glycols, deionization
Water supplies only 100 parts of gross weight
Compositionss 10:0.05 part of pectin, 5 parts of neopentyl glycols, 1 part of pentanediol, deionized water supply only 100 parts of gross weight
Compositionss 11:35 parts of chitins, 0.0001 part of 1,8- ethohexadiol, deionized water supply only 100 parts of gross weight
Compositionss 12:0.1 part of dextrin, 5 parts of Isosorbide-5-Nitrae-butynediols, deionized water supply only 100 parts of gross weight
Compositionss 13:20 parts of carboxyethyl cellulose, 25 parts of bisphenol-As, deionized water supply only 100 parts of gross weight
Compositionss 14:20 parts of methylcellulose, 0.01 part of diglycol, deionized water supply only 100 parts of gross weight
Compositionss 15:20 parts of hydroxy propyl celluloses, 5 parts of triethylene-glycols, deionized water supply only 100 parts of gross weight
Compositionss 16:20 parts of hydroxy propyl celluloses, 5 parts of dipropylene glycols, deionized water supply only 100 parts of gross weight
Compositionss 17:20 parts of hydroxy propyl celluloses, 5 parts of 2- ethyls-BDOs, deionized water supply only gross weight
100 parts
Compositionss 18:20 parts of hydroxy propyl celluloses, 5 parts of 1,5-PDs, deionized water supply only 100 parts of gross weight
Compositionss 19:20 parts of hydroxy propyl celluloses, 5 parts of 2- methyl isophthalic acids, 5- pentanediols, deionized water supply only gross weight
100 parts
Compositionss 20:20 parts of hydroxy propyl celluloses, 5 parts of 1,6- hexanediol, deionized water supply only 100 parts of gross weight
Compositionss 21:20 parts of hydroxy propyl celluloses, 5 parts of hydroxymethyl-cyclohexanes, deionized water supply only gross weight 100
Part
Compositionss 22:20 parts of hydroxy propyl celluloses, 5 parts of neopentyl glycols, deionized water supply only 100 parts of gross weight
Compositionss 23:20 parts of hydroxy propyl celluloses, 5 parts of trimethylolethanes, deionized water supply only 100 parts of gross weight
Compositionss 24:20 parts of hydroxy propyl celluloses, 5 parts of tri hydroxy methyl butanes, deionized water supply only 100 parts of gross weight
Compositionss 25:20 parts of hydroxy propyl celluloses, 5 parts of trimethylolpropanes, deionized water supply only 100 parts of gross weight
Compositionss 26:20 parts of hydroxy propyl celluloses, 5 parts of tetramethylolmethanes, deionized water supply only 100 parts of gross weight
Compositionss 27:20 parts of hydroxy propyl celluloses, 5 parts of double trimethylolpropanes, deionized water supply only gross weight 100
Part
Compositionss 28:20 parts of hydroxy propyl celluloses, 5 parts of erithritols, deionized water supply only 100 parts of gross weight
Compositionss 29:20 parts of hydroxy propyl celluloses, 5 parts of Polyglycol 166-450, deionized water supply only 100 parts of gross weight
Compositionss 30:20 parts of hydroxy propyl celluloses, 5 parts of PolyTHFs, deionized water supply only 100 parts of gross weight
Acid Woolen-making liquid is prepared using combination of the above thing 1 to 30:
(1) mixed acid solution is configured, difference is as follows:
Mixed acid solution 1:The mass percent concentration of Fluohydric acid. is 7%, and the mass percent concentration of nitric acid is 58%.
Mixed acid solution 2:The mass percent concentration of Fluohydric acid. is 30%, and the mass percent concentration of nitric acid is 55%;
Mixed acid solution 3:The mass percent concentration of Fluohydric acid. is 20%, and the mass percent concentration of nitric acid is 75%;
Mixed acid solution 4:The mass percent concentration of Fluohydric acid. is 15%, and the mass percent concentration of nitric acid is 40%;
Mixed acid solution 5:The mass percent concentration of Fluohydric acid. is 5%, and the mass percent concentration of nitric acid is 25%;
(2) configure acid Woolen-making liquid:
Compositionss 1 to 10 are separately added in mixed acid solution 1, wherein the matter of assistant chemical compositionss and mixed acid solution 1
Amount is than being 15:100;
Compositionss 11 to 15 are separately added in mixed acid solution 2, wherein the matter of assistant chemical compositionss and mixed acid solution 2
Amount is than being 5:100;
Compositionss 16 to 20 are separately added in mixed acid solution 3, wherein the matter of assistant chemical compositionss and mixed acid solution 3
Amount is than being 1:100;
Compositionss 21 to 25 are separately added in mixed acid solution 4, wherein the matter of assistant chemical compositionss and mixed acid solution 4
Amount is than being 0.05:100;
During compositionss 26 to 30 add mixed acid solution 5, the wherein mass ratio of assistant chemical compositionss and mixed acid solution 5
For 13:100;
Using said ratio, acidity Woolen-making liquid 1 to 30 is obtained.
Using above-mentioned acid Woolen-making liquid to polysilicon making herbs into wool:
30 groups of polycrystalline silicon used for solar battery pieces are taken, in being immersed in acid Woolen-making liquid 1 to 30 respectively, making herbs into wool is carried out;
In acid Woolen-making liquid 1-10, making herbs into wool temperature is 15 DEG C, and the making herbs into wool time is 150s.
In acid Woolen-making liquid 11-15, making herbs into wool temperature is 30 DEG C, and the making herbs into wool time is 60s.
In acid Woolen-making liquid 16-20, making herbs into wool temperature is 10 DEG C, and the making herbs into wool time is 100s.
In acid Woolen-making liquid 21-25, making herbs into wool temperature is 15 DEG C, and the making herbs into wool time is 200s.
In acid Woolen-making liquid 26-30, making herbs into wool temperature is 5 DEG C, and the making herbs into wool time is 300s.
Meanwhile, using mixed acid solution making herbs into wool (not adding the present composition):In mixed acid solution, the quality of Fluohydric acid.
Percent concentration is 7%, and the mass percent concentration of nitric acid is 58%.
The Buddha's warrior attendant wire cutting polysilicon chip surface of non-making herbs into wool is presented very uneven surface topography, and the such as Electronic Speculum of Fig. 1 is put down
Shown in the figure of face.
The assistant chemical compositionss of the present invention are not added to carry out Buddha's warrior attendant wire cutting polysilicon making herbs into wool, its Electronic Speculum plane graph is as schemed
2。
To adding polysilicon scanning electron microscope plane Fig. 3 of the acid Woolen-making liquid making herbs into wool of the assistant chemical compositionss of the present invention.
From Fig. 1-3, it is distributed than more uniform by the corrosion matte that method of the present invention making herbs into wool is formed.
There is serious color difference in the cell piece of the follow-up coating process of Jing crystal-silicon battery slices, see Fig. 4, it is impossible to which putting into production makes
With.
The plated film cell piece surface after Buddha's warrior attendant wire cutting polysilicon making herbs into wool is carried out using the assistant chemical compositionss of the present invention
With good uniformity, Fig. 5 is seen.
It is important to note that as the cell piece surface obtained using this patent has good uniformity, reflection
Rate is low, and the electrical property of battery so as to made by is substantially better than makes the electrical of battery with silicon chip made by convention acidic Woolen-making liquid
Can, typical Performance comparision is shown in Table 1.
The electrical property comparative example of 1 solaode of table
Test ID | Voc (is lied prostrate) | Isc (ampere) | FF | Eta (%) |
Conventional making herbs into wool | 0.6345 | 8.61 | 77.74 | 17.45 |
Acid Woolen-making liquid 2 | 0.635 | 8.886 | 79.23 | 18.38 |
Acid Woolen-making liquid 4 | 0.635 | 8.895 | 79.39 | 18.42 |
Acid Woolen-making liquid 6 | 0.635 | 8.928 | 79.25 | 18.41 |
Below the specific embodiment of the present invention has fully been indicated.It is pointed out that being familiar with the technology in the field
Scope of any change that personnel are done to the specific embodiment of the present invention all without departing from claims of the present invention.Accordingly
Ground, the scope of the claim of the present invention are also not limited only to previous embodiment.
Claims (8)
1. it is a kind of for monocrystal silicon or polysilicon acidity making herbs into wool assistant chemical compositionss, it is characterised in that:At least include:Polysaccharide
Or derivatives thereof, polyhydric alcohol or derivatives thereof.
2. according to claim 1 a kind of for monocrystal silicon or the assistant chemical compositionss of polysilicon acidity making herbs into wool, which is special
Levy and be:Including 0.05-75 part polysaccharide or derivatives thereof, 0.0001-25 part polyhydric alcohol or derivatives thereof, in parts by weight.
3. according to claim 1 a kind of for monocrystal silicon or the assistant chemical compositionss of polysilicon acidity making herbs into wool, which is special
Levy and be:It is 0.1-35 part polysaccharide or derivatives thereof including percetage by weight, 0.01-10 part polyhydric alcohol or derivatives thereof, with weight
Amount part meter.
4. according to claim 1 to 5 it is a kind of for monocrystal silicon or polysilicon acidity making herbs into wool assistant chemical compositionss, its
It is characterised by:The polysaccharide is the polymeric carbohydrate that repetitives are joined together to form by glycosidic bond;It is described many
Sugar at least includes amylose, amylopectin, pectin, glycogen, agar, sodium alginate, carrageenan, chitin, beta glucan, paste
Essence, carboxymethyl cellulose, carboxyethyl cellulose, hydroxy propyl cellulose, methylcellulose, ribose, xylose, arabinose, fruit
One or more in sugar, galactose;The molecular weight of the polysaccharide be more than 20000, preferably 20,000 to 1,000,000 it
Between.
5. according to claim 1 to 5 it is a kind of for monocrystal silicon or polysilicon acidity making herbs into wool assistant chemical compositionss, its
It is characterised by:The polyhydric alcohol at least includes binary to the combination of one or more of hexahydroxylic alcohols;Preferably, polyhydric alcohol includes second
Glycol, 1,2-PD, 1,3-PD, BDO, 1,3 butylene glycol, neopentyl glycol, pentanediol, ethylene glycol, 1,8-
Ethohexadiol, Isosorbide-5-Nitrae-butynediols, bisphenol-A, diglycol, triethylene-glycol, dipropylene glycol, two contractings 3 the third two
Alcohol, Propylene Glycol, 2- ethyls-BDO, 1,5-PD, 2- methyl isophthalic acids, 5- pentanediols, 1,6- hexanediol, dihydroxymethyl
Hexamethylene, neopentyl glycol, trimethylolethane, tri hydroxy methyl butane, trimethylolpropane, glycerol, tetramethylolmethane, double three hydroxyls first
Base propane, erithritol, xylitol, Mannitol, butoxypropanol, galactitol and Sorbitol;The derivant of the polyhydric alcohol
For the addition polymers of the alkoxide of polyhydric alcohol, poly alkylene glycol and cyclic ethers;Preferably, the derivant of polyhydric alcohol includes ethoxy
The addition polymers of change, the polyhydric alcohol of the third oxidation and PEPA, the poly alkylene glycol and cyclic ethers include PolyTHF;Institute
Stating poly alkylene glycol includes Polyethylene Glycol, polypropylene glycol and Polyglycol 166-450.
6. application of the assistant chemical compositionss described in any one of claim 1 to 7 in monocrystal silicon or polysilicon making herbs into wool.
It is 7. as claimed in claim 8 to apply, it is characterised in that:Assistant chemical compositionss are added into the mixing of Fluohydric acid., nitric acid
In solution, acid Woolen-making liquid is obtained;Again monocrystalline silicon piece or polysilicon chip are immersed in acid Woolen-making liquid carries out making herbs into wool.
It is 8. as claimed in claim 8 to apply, it is characterised in that:The assistant chemical compositionss and Fluohydric acid., the mixing of nitric acid
The mass ratio of solution is (0.05-15):100;In the Fluohydric acid., the mixed solution of nitric acid, the mass percent of Fluohydric acid. is dense
Spend for 5-30%, the mass percent concentration of nitric acid is 25-75%;Making herbs into wool temperature is 5-30 DEG C, and the making herbs into wool time is 60-300S.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610905268.9A CN106521634A (en) | 2016-10-18 | 2016-10-18 | Auxiliary chemical composition used for monocrystalline silicon or polycrystalline silicon acidic texturization and application thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610905268.9A CN106521634A (en) | 2016-10-18 | 2016-10-18 | Auxiliary chemical composition used for monocrystalline silicon or polycrystalline silicon acidic texturization and application thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
CN106521634A true CN106521634A (en) | 2017-03-22 |
Family
ID=58332191
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610905268.9A Pending CN106521634A (en) | 2016-10-18 | 2016-10-18 | Auxiliary chemical composition used for monocrystalline silicon or polycrystalline silicon acidic texturization and application thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN106521634A (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107217306A (en) * | 2017-05-19 | 2017-09-29 | 湖州三峰能源科技有限公司 | The Chemical composition that of polysilicon chip acid making herbs into wool optimization agent and its application |
CN108193281A (en) * | 2018-03-09 | 2018-06-22 | 常州时创能源科技有限公司 | The black silicon process for etching of polycrystalline |
CN108221057A (en) * | 2018-01-18 | 2018-06-29 | 西安润威光电科技有限公司 | A kind of graphite oxide alkenyl crystal silicon flocking additive and preparation method and prepare the method for silicon solar battery pile face using it |
CN108251894A (en) * | 2018-01-19 | 2018-07-06 | 温岭汉德高分子科技有限公司 | A kind of etching method of monocrystalline silicon piece |
CN108360072A (en) * | 2018-02-25 | 2018-08-03 | 温岭汉德高分子科技有限公司 | A kind of monocrystalline silicon flocking additive based on the poly- 2- acrylamide-2-methylpro panesulfonic acids sodium copolymer of chitosan- |
CN109943888A (en) * | 2019-03-06 | 2019-06-28 | 东华大学 | It is a kind of reduce the black silicon making herbs into wool of polycrystalline after flannelette difference borehole acid additive and its application |
CN110644055A (en) * | 2019-10-12 | 2020-01-03 | 湖南理工学院 | Monocrystalline silicon texturing additive formula containing polysaccharide and alcohols |
CN112813502A (en) * | 2020-12-30 | 2021-05-18 | 常州高特新材料股份有限公司 | Monocrystalline silicon etching texturing additive and application thereof |
CN113502163A (en) * | 2021-09-10 | 2021-10-15 | 杭州晶宝新能源科技有限公司 | Chemical auxiliary agent for forming solar cell back structure, and preparation method and application thereof |
CN113817472A (en) * | 2021-11-23 | 2021-12-21 | 绍兴拓邦电子科技有限公司 | Texturing process of solar cell silicon wafer |
Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101962811A (en) * | 2010-11-01 | 2011-02-02 | 浙江晶科能源有限公司 | Monocrystalline silicon piece texturizing liquid and texturizing method thereof |
CN102787361A (en) * | 2012-09-07 | 2012-11-21 | 中国船舶重工集团公司第七一八研究所 | Additive for texturing solution of monocrystalline silicon |
CN102888656A (en) * | 2012-09-28 | 2013-01-23 | 绍兴拓邦电子科技有限公司 | High-boiling point monocrystalline silicon wafer surface texturing additive and using method thereof |
CN103184454A (en) * | 2011-12-31 | 2013-07-03 | 上海晶太光伏科技有限公司 | Polycrystal alkaline method for making texture surface |
CN103890139A (en) * | 2011-10-19 | 2014-06-25 | 东友精细化工有限公司 | Texture etching solution composition and texture etching method of crystalline silicon wafers |
CN104120495A (en) * | 2014-07-10 | 2014-10-29 | 上海应用技术学院 | A texturing liquid used for monocrystalline silicon surface texturing and a preparing method thereof |
CN104294368A (en) * | 2013-07-19 | 2015-01-21 | 东友精细化工有限公司 | Texture etching solution composition and texture etching method of crystalline silicon wafers |
CN104342702A (en) * | 2013-08-05 | 2015-02-11 | 南京科乃迪科环保科技有限公司 | Auxiliary chemical composition for monocrystalline silicon or polycrystalline silicon acidic wool making |
CN105113009A (en) * | 2015-08-21 | 2015-12-02 | 合肥中南光电有限公司 | Environment-friendly monocrystalline silicon piece texturing liquid and preparation method thereof |
CN105113010A (en) * | 2015-08-21 | 2015-12-02 | 合肥中南光电有限公司 | Environmentally-friendly monocrystalline silicon wafer texturing liquor and preparation method thereof |
CN105133034A (en) * | 2015-08-27 | 2015-12-09 | 安徽祈艾特电子科技有限公司 | Antibacterial silicon wafer texturing agent and preparation method therefor |
CN105133026A (en) * | 2015-08-21 | 2015-12-09 | 合肥中南光电有限公司 | Low-damage monocrystalline silicon slice texturing solution and preparation method thereof |
CN105133030A (en) * | 2015-08-25 | 2015-12-09 | 合肥中南光电有限公司 | Long-acting silicon wafer texture-etchant and preparation method therefor |
CN106087068A (en) * | 2016-07-08 | 2016-11-09 | 合肥中南光电有限公司 | A kind of amino of chitosan sulfonic acid monocrystaline silicon solar cell sheet surface texture liquid and preparation method thereof |
-
2016
- 2016-10-18 CN CN201610905268.9A patent/CN106521634A/en active Pending
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101962811A (en) * | 2010-11-01 | 2011-02-02 | 浙江晶科能源有限公司 | Monocrystalline silicon piece texturizing liquid and texturizing method thereof |
CN103890139A (en) * | 2011-10-19 | 2014-06-25 | 东友精细化工有限公司 | Texture etching solution composition and texture etching method of crystalline silicon wafers |
CN103184454A (en) * | 2011-12-31 | 2013-07-03 | 上海晶太光伏科技有限公司 | Polycrystal alkaline method for making texture surface |
CN102787361A (en) * | 2012-09-07 | 2012-11-21 | 中国船舶重工集团公司第七一八研究所 | Additive for texturing solution of monocrystalline silicon |
CN102888656A (en) * | 2012-09-28 | 2013-01-23 | 绍兴拓邦电子科技有限公司 | High-boiling point monocrystalline silicon wafer surface texturing additive and using method thereof |
CN104294368A (en) * | 2013-07-19 | 2015-01-21 | 东友精细化工有限公司 | Texture etching solution composition and texture etching method of crystalline silicon wafers |
CN104342702A (en) * | 2013-08-05 | 2015-02-11 | 南京科乃迪科环保科技有限公司 | Auxiliary chemical composition for monocrystalline silicon or polycrystalline silicon acidic wool making |
CN104120495A (en) * | 2014-07-10 | 2014-10-29 | 上海应用技术学院 | A texturing liquid used for monocrystalline silicon surface texturing and a preparing method thereof |
CN105113009A (en) * | 2015-08-21 | 2015-12-02 | 合肥中南光电有限公司 | Environment-friendly monocrystalline silicon piece texturing liquid and preparation method thereof |
CN105113010A (en) * | 2015-08-21 | 2015-12-02 | 合肥中南光电有限公司 | Environmentally-friendly monocrystalline silicon wafer texturing liquor and preparation method thereof |
CN105133026A (en) * | 2015-08-21 | 2015-12-09 | 合肥中南光电有限公司 | Low-damage monocrystalline silicon slice texturing solution and preparation method thereof |
CN105133030A (en) * | 2015-08-25 | 2015-12-09 | 合肥中南光电有限公司 | Long-acting silicon wafer texture-etchant and preparation method therefor |
CN105133034A (en) * | 2015-08-27 | 2015-12-09 | 安徽祈艾特电子科技有限公司 | Antibacterial silicon wafer texturing agent and preparation method therefor |
CN106087068A (en) * | 2016-07-08 | 2016-11-09 | 合肥中南光电有限公司 | A kind of amino of chitosan sulfonic acid monocrystaline silicon solar cell sheet surface texture liquid and preparation method thereof |
Non-Patent Citations (1)
Title |
---|
魏启东等: "《第十一届中国光伏大会暨展览会 会议论文集 上册》", 31 October 2011, 东南大学出版社 * |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107217306B (en) * | 2017-05-19 | 2023-07-07 | 湖州三峰能源科技有限公司 | Chemical composition of polycrystalline silicon wafer acid texturing optimizing agent and application thereof |
CN107217306A (en) * | 2017-05-19 | 2017-09-29 | 湖州三峰能源科技有限公司 | The Chemical composition that of polysilicon chip acid making herbs into wool optimization agent and its application |
CN108221057A (en) * | 2018-01-18 | 2018-06-29 | 西安润威光电科技有限公司 | A kind of graphite oxide alkenyl crystal silicon flocking additive and preparation method and prepare the method for silicon solar battery pile face using it |
CN108221057B (en) * | 2018-01-18 | 2020-05-08 | 西安润威光电科技有限公司 | Method for preparing silicon solar cell texture by using graphene oxide-based crystalline silicon texture making additive |
CN108251894A (en) * | 2018-01-19 | 2018-07-06 | 温岭汉德高分子科技有限公司 | A kind of etching method of monocrystalline silicon piece |
CN108360072A (en) * | 2018-02-25 | 2018-08-03 | 温岭汉德高分子科技有限公司 | A kind of monocrystalline silicon flocking additive based on the poly- 2- acrylamide-2-methylpro panesulfonic acids sodium copolymer of chitosan- |
CN108193281A (en) * | 2018-03-09 | 2018-06-22 | 常州时创能源科技有限公司 | The black silicon process for etching of polycrystalline |
CN109943888A (en) * | 2019-03-06 | 2019-06-28 | 东华大学 | It is a kind of reduce the black silicon making herbs into wool of polycrystalline after flannelette difference borehole acid additive and its application |
CN110644055A (en) * | 2019-10-12 | 2020-01-03 | 湖南理工学院 | Monocrystalline silicon texturing additive formula containing polysaccharide and alcohols |
CN112813502B (en) * | 2020-12-30 | 2022-05-20 | 常州高特新材料股份有限公司 | Monocrystalline silicon etching texturing additive and application thereof |
CN112813502A (en) * | 2020-12-30 | 2021-05-18 | 常州高特新材料股份有限公司 | Monocrystalline silicon etching texturing additive and application thereof |
CN113502163A (en) * | 2021-09-10 | 2021-10-15 | 杭州晶宝新能源科技有限公司 | Chemical auxiliary agent for forming solar cell back structure, and preparation method and application thereof |
CN113817472A (en) * | 2021-11-23 | 2021-12-21 | 绍兴拓邦电子科技有限公司 | Texturing process of solar cell silicon wafer |
CN113817472B (en) * | 2021-11-23 | 2022-02-11 | 绍兴拓邦电子科技有限公司 | Texturing process of solar cell silicon wafer |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106521634A (en) | Auxiliary chemical composition used for monocrystalline silicon or polycrystalline silicon acidic texturization and application thereof | |
CN106222756A (en) | Additive and application process thereof for diamond wire cutting fine-hair maring using monocrystalline silicon slice | |
CN106024988B (en) | The black silicon of one-step method wet method prepares and surface treatment method | |
CN101937946B (en) | Surface texture method of solar battery silicon slice | |
CN106098840A (en) | A kind of black silicon preparation method of wet method | |
CN103066160B (en) | A kind of method of solar cell silicon wafer Surface Creation porous silicon | |
CN109473487B (en) | Crystalline silicon solar cell based on composite light trapping structure and preparation method thereof | |
CN102270688A (en) | Solar cell | |
Zhang et al. | An 18.9% efficient black silicon solar cell achieved through control of pretreatment of Ag/Cu MACE | |
CN104393104B (en) | A kind for the treatment of technology for HIT solar cell texture | |
CN104966762A (en) | Preparation method of texturized surface structure of crystalline silicon solar cell | |
CN107287597A (en) | Wool-making agent of monocrystalline silicon surface processing and preparation method thereof and application method | |
CN103022266B (en) | Method for manufacturing novel light-trapping synergetic antireflection structure on basis of LSP (localized surface plasma) effect | |
CN111105995B (en) | Cleaning and texturing method of monocrystalline silicon wafer | |
CN104928680B (en) | The texture etchant and texture etching method of crystallinity silicon chip | |
JP2022545188A (en) | Perovskite/silicon tandem photovoltaic device | |
CN102034901B (en) | Transparent conductive thin film and preparation method thereof | |
CN107316917A (en) | A kind of method for the monocrystalline silicon suede structure for preparing antiradar reflectivity | |
CN106158996A (en) | A kind of monocrystalline silicon-based nano inverted pyramid structure back of the body passivating solar battery and preparation method thereof | |
Kulesza-Matlak et al. | Black silicon obtained in two-step short wet etching as a texture for silicon solar cells-surface microstructure and optical properties studies | |
CN104409564B (en) | N-type nanometer black silicon manufacturing method and solar cell manufacturing method | |
CN113502163B (en) | Chemical auxiliary agent for forming solar cell back structure, and preparation method and application thereof | |
Li et al. | Effect of the anisotropy of etching surface morphology on light-trapping and photovoltaic conversion efficiencies of silicon solar cell | |
Li et al. | A metal-free additive texturization method used for diamond-wire-sawn multi-crystalline silicon wafers | |
Ji et al. | Improvement of the surface structure for the surface passivation of black silicon |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170322 |