CN113502163B - Chemical auxiliary agent for forming solar cell back structure, and preparation method and application thereof - Google Patents
Chemical auxiliary agent for forming solar cell back structure, and preparation method and application thereof Download PDFInfo
- Publication number
- CN113502163B CN113502163B CN202111058843.3A CN202111058843A CN113502163B CN 113502163 B CN113502163 B CN 113502163B CN 202111058843 A CN202111058843 A CN 202111058843A CN 113502163 B CN113502163 B CN 113502163B
- Authority
- CN
- China
- Prior art keywords
- component
- solar cell
- alkaline
- auxiliary agent
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000126 substance Substances 0.000 title claims abstract description 45
- 239000012752 auxiliary agent Substances 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 51
- 239000010703 silicon Substances 0.000 claims abstract description 51
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000002994 raw material Substances 0.000 claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 239000000243 solution Substances 0.000 claims description 40
- 238000005530 etching Methods 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 21
- 238000002156 mixing Methods 0.000 claims description 15
- 239000007788 liquid Substances 0.000 claims description 14
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 14
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 14
- 239000007864 aqueous solution Substances 0.000 claims description 11
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 10
- 239000012670 alkaline solution Substances 0.000 claims description 10
- -1 polyhexamethylene guanidine Polymers 0.000 claims description 10
- 229910052708 sodium Inorganic materials 0.000 claims description 10
- 239000011734 sodium Substances 0.000 claims description 10
- 239000001814 pectin Substances 0.000 claims description 9
- 235000010987 pectin Nutrition 0.000 claims description 9
- 229920001277 pectin Polymers 0.000 claims description 9
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 8
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 8
- 229920000161 Locust bean gum Polymers 0.000 claims description 7
- 239000000711 locust bean gum Substances 0.000 claims description 7
- 235000010420 locust bean gum Nutrition 0.000 claims description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 5
- 229920002752 Konjac Polymers 0.000 claims description 4
- 229920002873 Polyethylenimine Polymers 0.000 claims description 4
- 239000000252 konjac Substances 0.000 claims description 4
- 235000019823 konjac gum Nutrition 0.000 claims description 3
- 239000004698 Polyethylene Substances 0.000 claims description 2
- 238000007654 immersion Methods 0.000 claims description 2
- 229920000573 polyethylene Polymers 0.000 claims description 2
- 238000002161 passivation Methods 0.000 abstract description 15
- 238000005260 corrosion Methods 0.000 abstract description 8
- 230000007797 corrosion Effects 0.000 abstract description 8
- 230000031700 light absorption Effects 0.000 abstract description 8
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 abstract description 6
- 239000000084 colloidal system Substances 0.000 abstract description 6
- 229920000642 polymer Polymers 0.000 abstract description 6
- 239000004094 surface-active agent Substances 0.000 abstract description 6
- 230000005641 tunneling Effects 0.000 abstract description 6
- 238000001465 metallisation Methods 0.000 abstract description 5
- 125000003158 alcohol group Chemical group 0.000 abstract description 3
- 150000004676 glycans Chemical class 0.000 abstract description 3
- 229920001282 polysaccharide Polymers 0.000 abstract description 3
- 239000005017 polysaccharide Substances 0.000 abstract description 3
- 230000000052 comparative effect Effects 0.000 description 36
- 235000012431 wafers Nutrition 0.000 description 29
- 238000006243 chemical reaction Methods 0.000 description 23
- 238000012360 testing method Methods 0.000 description 11
- 239000000654 additive Substances 0.000 description 10
- 230000000996 additive effect Effects 0.000 description 9
- 239000010410 layer Substances 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 8
- 238000002310 reflectometry Methods 0.000 description 7
- 238000003756 stirring Methods 0.000 description 6
- XFRVVPUIAFSTFO-UHFFFAOYSA-N 1-Tridecanol Chemical compound CCCCCCCCCCCCCO XFRVVPUIAFSTFO-UHFFFAOYSA-N 0.000 description 5
- 239000002671 adjuvant Substances 0.000 description 5
- 239000003513 alkali Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- IGFHQQFPSIBGKE-UHFFFAOYSA-N Nonylphenol Natural products CCCCCCCCCC1=CC=C(O)C=C1 IGFHQQFPSIBGKE-UHFFFAOYSA-N 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000001913 cellulose Substances 0.000 description 3
- 229920002678 cellulose Polymers 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical compound CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 description 3
- 229920002554 vinyl polymer Polymers 0.000 description 3
- 229920001503 Glucan Polymers 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- LUEWUZLMQUOBSB-FSKGGBMCSA-N (2s,3s,4s,5s,6r)-2-[(2r,3s,4r,5r,6s)-6-[(2r,3s,4r,5s,6s)-4,5-dihydroxy-2-(hydroxymethyl)-6-[(2r,4r,5s,6r)-4,5,6-trihydroxy-2-(hydroxymethyl)oxan-3-yl]oxyoxan-3-yl]oxy-4,5-dihydroxy-2-(hydroxymethyl)oxan-3-yl]oxy-6-(hydroxymethyl)oxane-3,4,5-triol Chemical compound O[C@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@H]1O[C@@H]1[C@@H](CO)O[C@@H](O[C@@H]2[C@H](O[C@@H](OC3[C@H](O[C@@H](O)[C@@H](O)[C@H]3O)CO)[C@@H](O)[C@H]2O)CO)[C@H](O)[C@H]1O LUEWUZLMQUOBSB-FSKGGBMCSA-N 0.000 description 1
- XUJLWPFSUCHPQL-UHFFFAOYSA-N 11-methyldodecan-1-ol Chemical compound CC(C)CCCCCCCCCCO XUJLWPFSUCHPQL-UHFFFAOYSA-N 0.000 description 1
- 244000247812 Amorphophallus rivieri Species 0.000 description 1
- 235000001206 Amorphophallus rivieri Nutrition 0.000 description 1
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229920002307 Dextran Polymers 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229920002581 Glucomannan Polymers 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 229940021013 electrolyte solution Drugs 0.000 description 1
- 150000002191 fatty alcohols Chemical class 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229940046240 glucomannan Drugs 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 235000010485 konjac Nutrition 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007785 strong electrolyte Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
- Weting (AREA)
Abstract
The invention discloses a chemical auxiliary agent for forming a back structure of a solar cell, a preparation method and application thereof, and relates to the technical field of solar cell manufacturing. The raw materials of the chemical auxiliary agent comprise 0.5-10 parts of a first component, 0.5-10 parts of a second component and 0.01-1 part of a third component; the first component is water soluble polysaccharide colloid; the second component is a water-soluble high molecular polymer with strong polarity; the third component is an alcohol ether surfactant. By improving the chemical auxiliary agent adopted by alkaline corrosion and utilizing the matching of the first component, the second component and the third component, the silicon wafer back structure after corrosion presents a novel back surface structure between a pyramid-shaped suede and a flat surface, so as to meet the special requirements of performances such as light absorption, tunneling oxide layer passivation and metallization on the surface structure.
Description
Technical Field
The invention relates to the technical field of solar cell manufacturing, in particular to a chemical auxiliary agent for forming a back structure of a solar cell, and a preparation method and application thereof.
Background
Currently, the mainstream solar cell is based on semiconductor single crystal silicon material, the technology development is rapid, and the conversion efficiency of the industry volume production is over 23% from the conventional aluminum back surface field cell to the double-sided passivated cell (PERC cell). Meanwhile, a new generation of solar cell technology, for example: the tunnel oxide layer passivation contact battery (TOPCon battery) is maturing rapidly, the mass production efficiency exceeds 24%, the highest efficiency reaches 25%, and the TOPCon battery is expected to become a technical route of next-generation industrialization.
The surface structure of the cell has an important influence on the performance of the TOPCon cell, and the back surface of the TOPCon cell at present has two common structures, namely a flat surface and a textured structure with a pyramid appearance.
The advantage of the pyramid structure is: the incident light can be utilized to the maximum extent, and the light absorption is increased; its disadvantages are: the pyramid surface is a silicon (111) surface, has a larger density of states than a (100) surface, and the surface is not completely flat but has microscopic undulations, so that the surface state is not favorable for the passivation effect of the tunneling oxide layer.
In contrast, a flat back surface has the advantages of: better passivation is easily obtained but has the disadvantage of not favouring light absorption. In addition, the flat back surface has a significant technical difficulty, and the contact resistance between the silver grid lines and the flat silicon surface is far higher than a normal value due to the poor matching of the back conductive paste and the flat surface, so that the efficiency of the battery is reduced.
Therefore, neither the pyramid structure nor the flat surface structure can have optical performance, passivation performance, and electrode contact performance.
Disclosure of Invention
The invention aims to provide a chemical auxiliary agent for forming a back structure of a solar cell and a preparation method thereof, and aims to obtain a novel back surface structure between a pyramid-shaped suede and a flat surface, and obtain a better passivation effect and a better silver grid line contact performance.
Another object of the present invention is to provide an alkaline etchant for forming a back structure of a solar cell and a method for preparing the same, which can form a special back structure on the surface of a silicon wafer through an etching reaction to improve the overall performance of the silicon wafer.
The third purpose of the invention is to provide the prepared solar cell based on the novel back structure, wherein the back surface of the cell has a structure between the pyramid-shaped texture surface and the flat surface, and the special requirements of light absorption, passivation of a tunneling oxide layer and metallization on the surface structure can be considered.
The invention is realized by the following steps:
according to a first aspect, the invention provides a chemical auxiliary agent for forming a back structure of a solar cell, which comprises, by mass, 0.5-10 parts of a first component, 0.5-10 parts of a second component and 0.01-1 part of a third component; the first component is water soluble polysaccharide colloid; the second component is a water-soluble high molecular polymer with strong polarity; the third component is an alcohol ether surfactant.
In a second aspect, the present invention provides a method for preparing a chemical assistant for forming a back structure of a solar cell, which is prepared by using the raw materials of the chemical assistant in the foregoing embodiments.
In a third aspect, the present invention provides an alkaline etching solution for forming a back structure of a solar cell, which is obtained by mixing the chemical auxiliary agent prepared by the preparation method in the foregoing embodiment with the alkaline solution.
In a fourth aspect, the present invention provides a method for preparing a back structure of a solar cell, which uses the alkaline etchant in the foregoing embodiment to etch a silicon wafer.
In a fifth aspect, the invention provides a monocrystalline silicon solar cell, which is prepared by adopting the solar cell back structure.
The invention has the following beneficial effects: the inventor improves the chemical auxiliary agent adopted for alkaline corrosion, and utilizes the matching of the first component, the second component and the third component to ensure that the corroded silicon wafer back structure presents a novel back surface structure between a pyramid-shaped suede and a flat surface, so that the silicon wafer back structure is suitable for a TOPCon battery, special requirements of performances such as light absorption, tunneling oxide layer passivation and metallization on the surface structure are considered, and the comprehensive performance is ideal.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
FIG. 1 is a microscopic structure view (a photograph of a front surface of an electron scanning microscope) of the back surface of a sample obtained in examples 1 to 4 of the present invention;
FIG. 2 is a microscopic structure view (cross-sectional photograph of an electron scanning microscope) of the back surface of a sample obtained in examples 1 to 4 of the present invention;
FIG. 3 is a scanning electron microscope photograph of a sample obtained in comparative example 1 of the present invention;
FIG. 4 is a scanning electron microscope photograph of a sample obtained in comparative example 2 of the present invention;
FIG. 5 is a scanning electron microscope photograph of a sample obtained in comparative example 3;
FIG. 6 is a scanning electron microscope photograph of a sample obtained in comparative example 4;
FIG. 7 is an optical photograph of the back surface of the silicon wafer after the etching reaction in example 4 and comparative example 5;
FIG. 8 is a graph showing the results of the spectral reflectance tests of the samples obtained in example 4 and comparative examples 1-2;
FIG. 9 is an optical photograph of the samples obtained in example 4 and comparative examples 1 to 2.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. The examples, in which specific conditions are not specified, were conducted under conventional conditions or conditions recommended by the manufacturer. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products available commercially.
Based on the drawbacks of the two structures on the back surface of the TOPCon cell, the inventor believes that in order to achieve the objectives of combining optical performance, passivation performance and contact performance of the electrodes, and further to achieve the optimal efficiency of the TOPCon cell, a novel back surface structure needs to be developed.
The inventor continuously explores for a long time, improves additives adopted in the corrosive liquid, utilizes the chemical auxiliary agent provided by the embodiment of the invention to be matched with alkali liquor to form the corrosive liquid, can form a novel back surface structure between a pyramid-shaped suede and a flat surface after a silicon wafer is treated, is suitable for a TOPCon battery, and has special requirements of light absorption, passivation of a tunneling oxide layer and metallization on the surface structure.
The embodiment of the invention provides a chemical auxiliary agent for forming a back structure of a solar cell, which comprises the following raw materials of 0.5-10 parts by mass of a first component, 0.5-10 parts by mass of a second component and 0.01-1 part by mass of a third component; the first component is water soluble polysaccharide colloid; the second component is a water-soluble high molecular polymer with strong polarity; the third component is an alcohol ether surfactant.
Specifically, the first component is selected from at least one of locust bean gum, dextran, konjac gum and pectin; the second component is selected from at least one of polyhexamethylene guanidine, polyethyleneimine, sodium poly-p-styrene sulfonate and sodium polyethylene sulfonate; the third component is at least one selected from alkylphenol ethoxylate, fatty alcohol polyoxyethylene ether and isomeric alcohol polyoxyethylene ether.
It should be noted that, the inventors have found that, by using the first component, the second component, and the third component as the effective ingredients of the additive: after the silicon wafer is processed by the alkaline corrosive liquid formed by the chemical auxiliary agent provided by the embodiment of the invention, a novel back surface structure can be formed, and the special requirements of light absorption, passivation of a tunneling oxide layer and metallization on the surface structure can be considered.
It is necessary to supplement that in the chemical assistant formula system, the colloidal molecules in the first component have strong bonding force with silicon surface atoms in the solution. When its concentration in alkaline etching solutions is low and in strong electrolyte solutions, these molecules are "wrapped" by ions and water molecules in the aqueous solution and randomly distributed in isolation in the solution. These isolated molecules will adsorb to bind on the silicon surface when the silicon wafer is reacted in an etching solution. However, these isolated molecules have small particle sizes, similar to isolated "anchor points," and cover only a very small fraction of the surface area, and therefore follow the silicon surface atoms with OH' s-The reaction proceeds and falls off quickly, failing to form a stable bond for a long time. Meanwhile, the colloid molecules contain a large number of hydrophilic groups such as hydroxyl groups, and when the second component is added, the charges of the high-polarity polymer are mutually attracted with the hydrophilic groups of the colloid molecules in the first component. These polymers can link a plurality of colloidal molecules, and thus form network-like adsorption on the surface of the silicon wafer. Therefore, a layer of polymer layer can be uniformly adsorbed on the surface of the silicon chip in a large area, and the protective layer can be kept for a long time in the process of corrosion reaction due to a plurality of anchor points. The effective adsorption area can block silicon and OH-To avoid corrosion, non-adsorbed or weakly adsorbed areas on the silicon surface follow the silicon with OH-Is etched by the reaction of (a). The third component (i.e., the alcoholic surfactant) favors silicon and OH-Reaction of (2)The generated hydrogen bubbles are discharged, so that the surface appearance of the silicon chip obtained by the reaction is uniform and consistent and has no air flow traces. Due to the synergistic effect of the three components, a uniform and specific back surface structure can be formed. The back surface structure exhibits a structure of "peaks" + "basins," the "peak" sidewalls approximating exposed (111) silicon facets, and the "basins" approximating exposed (100) silicon facets. The structure has a high proportion of (100) crystal faces, and is beneficial to obtaining a good passivation effect compared with a pyramid textured structure. Meanwhile, the structure has certain micro roughness, is large in contact area and is easier to contact with conductive silver paste. Therefore, the contact resistance of the material is obviously lower than that of a flat surface structure, and better efficiency is easily obtained.
In order to further improve the comprehensive performance of the silicon wafer after corrosion treatment, the inventor further optimizes the use amount of each component: the raw materials comprise, by mass, 0.5-5 parts of a first component, 0.5-3 parts of a second component and 0.01-0.5 part of a third component. It should be noted that by further optimizing the selection of the raw materials of the three components, the optical performance, passivation performance and contact performance of the electrode after the etching treatment can be further improved, so that the TOPCon battery can obtain the optimal efficiency.
In an alternative embodiment, the method comprises the following steps: mixing the raw materials of the chemical auxiliary agent and water to obtain an aqueous solution, wherein the mass fractions of the first component, the second component and the third component in the aqueous solution are 0.5-10%, 0.5-10% and 0.01-0.5% in sequence. For example, the mass fraction of the first component may be 0.5%, 1.0%, 2.0%, 3.0%, 4.0%, 5.0%, 6.0%, 7.0%, 8.0%, 9.0%, 10%, or the like, or may be any value between the above values. The mass fraction of the second component may be the same as or different from that of the first component, which is also a value in the range of 0.5-10%. The mass fraction of the third component may be 0.01%, 0.05%, 0.1%, 0.2%, 0.3%, 0.4%, 0.5%, etc., and may be any value between the above values.
It should be noted that the chemical auxiliary agent as a product can be in the form of an aqueous solution, or can form an alkaline corrosion solution with alkali liquor to be sold as a product, but the dosage ratio of the three components needs to be controlled. On the premise of accurately controlling the dosage proportion of the three components, the three components can be prepared into an aqueous solution or form an alkaline corrosive solution by adopting a conventional method, and the product form can be various, so that the product falls into the protection scope of the application as long as the mixture ratio of the three components is within the range defined by the application.
The embodiment of the invention provides an alkaline etching solution for forming a back structure of a solar cell, which is obtained by mixing the chemical auxiliary agent prepared by the preparation method in the embodiment with an alkaline solution, and the amount of the total chemical auxiliary agent can be controlled within a conventional range.
In some embodiments, the chemical auxiliary is mixed with the alkaline solution in the form of an aqueous solution, the mass fraction of the alkaline solution is controlled to be 1-2% (e.g., 1%, 1.5%, 2%, etc.), and the volume ratio of the alkaline solution to the chemical auxiliary aqueous solution is 100:0.5-100:2 (100: 0.5, 100:1.0, 100:1.5, 100:2, etc.).
In other embodiments, the chemical auxiliary agent may not be added in the form of an aqueous solution, but the first component, the second component and the third component may be directly added to the alkali solution, and the dosage ratio of the first component, the second component and the third component is controlled within the range defined in the present application.
Specifically, the alkaline solution is a sodium hydroxide solution or a potassium hydroxide solution.
The embodiment of the invention also provides a preparation method of the novel back structure of the solar cell, which is characterized in that the alkaline corrosive liquid is adopted to corrode a silicon wafer, so that a novel back surface structure between a pyramid-shaped suede and a flat surface can be obtained, and the optical performance, the passivation performance and the contact performance of an electrode can be considered at the same time.
In some embodiments, the method of making comprises: reacting the silicon wafer in alkaline corrosive liquid for 120-600 seconds, and controlling the temperature of the alkaline corrosive liquid to be 50-95 ℃. Specifically, the reaction temperature may be 50 ℃, 60 ℃, 70 ℃, 80 ℃, 90 ℃, 95 ℃ or the like, and the reaction time may be 120s, 200s, 300s, 400s, 500s, 600s or the like.
In some embodiments, the silicon wafer is pre-cleaned and then reacted with an alkaline etchant, and the surface impurities are removed by pre-cleaning and then the etching reaction is performed.
In some embodiments, after the reaction with the alkaline corrosive liquid, the silicon wafer is soaked and washed by hydrogen peroxide, and residual organic matters adsorbed on the surface of the silicon wafer are thoroughly removed by the hydrogen peroxide washing. After the washing, the washing may be performed again with water and dried.
The embodiment of the invention provides a preparation method of a novel back structure of a solar cell, which is prepared by adopting the preparation method, so that the solar cell has a special novel back structure, is particularly suitable for TOPCon solar cells, can overcome the defects of the two existing structures, has excellent comprehensive performance and has good market application prospect. However, the TOPCon solar cell is not limited to this.
The features and properties of the present invention are described in further detail below with reference to examples.
Example 1
The embodiment provides a preparation method of a novel back structure of a solar cell, which comprises the following steps:
(1) preparation of chemical adjuvant solution
Mixing and stirring 1.5 parts by mass of locust bean gum and water to obtain a clear colloidal solution, then sequentially adding 0.5 part by mass of polyhexamethylene guanidine and 0.1 part by mass of nonylphenol polyoxyethylene ether, and fully and uniformly mixing to obtain a chemical assistant solution. Wherein, in the chemical additive solution, the mass fraction of the locust bean gum is 1.5 percent, the mass fraction of the polyhexamethylene guanidine is 0.5 percent, and the mass fraction of the polyoxyethylene nonyl phenyl ether is 0.1 percent.
(2) Preparation and corrosion reaction of alkaline corrosive liquid
Preparing a potassium hydroxide solution with the mass fraction of 1.5% as an alkaline corrosive solution, and keeping the temperature of the solution at 70 ℃. And (2) adding the chemical additive solution prepared in the step (1) into the alkaline corrosive liquid, controlling the volume ratio of the alkaline corrosive liquid to the chemical additive solution to be 100:1, and uniformly stirring.
The silicon wafer after the front surface diffusion (boron diffusion is a common technique in TOPCon solar cell manufacturing process) was pre-cleaned and put into the above alkaline etching solution to react for 200 seconds.
(3) Post-treatment
And taking out the silicon wafer after reaction, immediately washing the silicon wafer by using deionized water, and fully diluting the corrosive solution attached to the surface. Immersing the silicon wafer after immersion in a hydrogen peroxide solution with the mass fraction of 1.5%, maintaining the temperature of the hydrogen peroxide solution at 60 ℃, and adding potassium hydroxide with the mass fraction of 0.5%. And cleaning and drying the silicon wafer again to obtain a test sample.
Example 2
The embodiment provides a method for preparing a novel back structure of a solar cell, which is different from embodiment 1 only in step (1), and specifically comprises the following steps:
mixing and stirring 2.0 parts by mass of glucan and water, then sequentially adding 0.5 part by mass of polyethyleneimine and 0.2 part by mass of fatty alcohol-polyoxyethylene ether, and fully and uniformly mixing to obtain a chemical assistant solution. Wherein, in the chemical auxiliary solution, the mass fraction of glucan is 2.0%, the mass fraction of polyethyleneimine is 0.5%, and the mass fraction of fatty alcohol-polyoxyethylene ether is 0.2%.
Example 3
The embodiment provides a method for preparing a novel back structure of a solar cell, which is different from embodiment 1 only in step (1), and specifically comprises the following steps:
mixing 1.0 part by mass of konjac glucomannan and water, stirring, then sequentially adding 0.5 part by mass of sodium poly-p-styrene sulfonate and 0.1 part by mass of isomeric tridecanol polyoxyethylene ether, and fully and uniformly mixing to obtain a chemical assistant solution. Wherein, in the chemical auxiliary agent solution, the mass fraction of konjac gum is 1.0%, the mass fraction of sodium poly-p-styrene sulfonate is 0.5%, and the mass fraction of isomeric tridecanol polyoxyethylene ether is 0.1%.
Example 4
The embodiment provides a method for preparing a novel back structure of a solar cell, which is different from embodiment 1 only in step (1), and specifically comprises the following steps:
mixing and stirring 3.0 parts by mass of pectin and water, then sequentially adding 1.0 part by mass of sodium polyvinyl sulfonate and 0.1 part by mass of isomeric tridecanol polyoxyethylene ether, and fully and uniformly mixing to obtain a chemical assistant solution. Wherein, in the chemical auxiliary agent solution, the mass fraction of pectin is 3.0%, the mass fraction of sodium polyvinyl sulfonate is 1.0%, and the mass fraction of isotridecanol polyoxyethylene ether is 0.1%.
Example 5
The embodiment provides a method for preparing a novel back structure of a solar cell, which is different from embodiment 1 only in step (1), and specifically comprises the following steps: mixing and stirring 10 parts by mass of locust bean gum and water to obtain a clear colloidal solution, then sequentially adding 10 parts by mass of polyhexamethylene guanidine and 5 parts by mass of nonylphenol polyoxyethylene ether, and fully and uniformly mixing to obtain a chemical assistant solution. Wherein, in the chemical additive solution, the mass fraction of the locust bean gum is 10 percent, the mass fraction of the polyhexamethylene guanidine is 10 percent, and the mass fraction of the nonylphenol polyoxyethylene ether is 0.5 percent.
Comparative example 1
The comparative example provides a conventional texturing additive, and the back of a silicon wafer is subjected to secondary texturing to obtain a pyramid-shaped textured structure.
The etching process comprises preparing 1% potassium hydroxide solution as alkaline etching solution, adding texturing additive (commercially available), maintaining the solution temperature at 80 deg.C, and reacting according to conventional texturing procedure. And cleaning and drying the textured silicon wafer to obtain a test sample.
Comparative example 2
And (3) selecting the existing alkaline polishing additive in the industry, and chemically polishing the back surface of the silicon wafer to obtain an approximately flat surface structure.
The etching process comprises preparing 1% potassium hydroxide solution as alkaline etching solution, adding alkaline polishing additive (commercially available), maintaining the solution temperature at 65 deg.C for 200s, and reacting according to etching and polishing procedure. And cleaning and drying the polished silicon wafer to obtain a test sample.
Comparative example 3
The present comparative example provides a method for preparing a novel back structure of a solar cell, which is different from example 4 only in that: the pectin in the first component is replaced by water-soluble cellulose. The other components remained the same.
Comparative example 4
The present comparative example provides a method for preparing a novel back structure of a solar cell, which is different from example 4 only in that: no second component (sodium polyvinyl sulfonate) was added to the chemical adjuvant.
Comparative example 5
The present comparative example provides a method for preparing a novel back structure of a solar cell, which is different from example 4 only in that: isomeric tridecanol polyoxyethylene ether is not added.
Test example 1
The back structures of the silicon wafers obtained after the etching reactions in examples 1 to 4 and comparative examples 1 to 2 were tested by scanning electron microscopy, and the results are shown in fig. 1 to 4.
The microstructures (scanning electron microscope front photographs) of the back surfaces of the samples obtained in examples 1 to 4 are shown in (a) to (d) of FIG. 1. The microstructures (scanning electron microscope sectional photographs) of the back surfaces of the samples obtained in examples 1 to 4 are shown in (a) to (d) of FIG. 2. As can be seen from fig. 1-2, these structures exhibit a structure of "peaks" + "basins," the "peak" sidewalls approximating the exposed (111) silicon facets, and the "basins" approximating the exposed (100) silicon facets. The "mountains" and "basins" uniformly cover the entire back surface of the cell in a random manner. In the four embodiments, the proportion of the exposed surface of the "basin" to the total surface area of the back surface is different, thus resulting in different surface reflectivities.
The photograph of the front surface of the sample obtained in comparative example 1 is shown in fig. 3 (a), and the photograph of the cross section is shown in fig. 3 (b). The surface can be seen to be a randomly distributed pyramidal structure, exposing the (111) facets.
The scanning electron micrograph of the sample obtained in comparative example 2 is shown in fig. 4. FIG. 4 is a back surface of a nearly flat structure with slightly square etch pits on the surface, but with very small etch pits (< 1 um) in depth. The surface of the structure is predominantly the (100) plane.
Comparing the examples with comparative examples 1 and 2, it can be seen that the novel backside structure obtained by the examples of the present invention is intermediate between the surfaces of the pyramidal texture structure and the flat structure, and has moderate reflectivity. The structure has a high proportion of (100) crystal faces, and is beneficial to obtaining a good passivation effect compared with a pyramid textured structure. Meanwhile, the structure has certain micro roughness, is large in contact area and is easier to contact with conductive silver paste. Therefore, its contact resistance is significantly lower than that of a flat surface structure, and it is easy to obtain more excellent efficiency.
Test example 2
In comparative example 3, the locust bean gum in the first component of the adjuvant was replaced with water-soluble cellulose, and the rest was the same as in example 4. The back surface of the silicon wafer after the etching reaction was observed by a scanning electron microscope, and the results are shown in FIG. 5, in which (a) is a front view of the sample and (b) is a side view of the cross section. Although water-soluble cellulose is also a water-soluble colloid, it has a weak force with the silicon surface, and cannot effectively inhibit the reaction of silicon atoms with alkali, forming random fluctuations, and does not form the more regular structure of "mountain peak" + "basin" shape as embodied in examples 1-4.
In comparative example 4, the sodium polyvinylsulfonate of the second component of the adjuvant was eliminated and the first component was still pectin, the rest being the same as in example 4. The back surface of the silicon wafer after the etching reaction was observed by a scanning electron microscope, and the results are shown in FIG. 6, in which (a) is a front view of the sample and (b) is a side view of the cross section. It can be seen that the pectin molecules in the etching solution are randomly and in isolated association with the atoms of the surface of the single crystal silicon. During the etching process, the areas where pectin molecules bind are protected and become the tips of the pyramids. The silicon atoms of the unbound regions are gradually replaced by OH-And (111) surfaces which are etched downwards and have slow etching rate are exposed, and a pyramid structure is formed. Due to the absence of the second component, pectin molecules cannot form a network-like adsorption layer but isolated adsorption points, so that the surface state after the final reaction is that pyramids are randomly distributed on a plane, and the more regular structures of 'mountain peak' + 'basin' embodied in examples 1-4 are not formed.
In comparative example 5, the surfactant isomeric tridecanol polyoxyethylene in the adjuvant third component was eliminated, leaving the first and second components, and the remainder was the same as in example 4. FIG. 7 shows optical photographs of the back surfaces of the silicon wafers after etching reaction in example 4 and comparative example 5, wherein (a) is example 4 and (b) is comparative example 5. As can be seen from the photographs, the appearance of the back surface was uniform in example 4, while the back surface in comparative example 5, although having a similar effect, had uneven spots on the surface due to adsorption of hydrogen bubbles generated during etching on the surface, which blocked the reaction of silicon and alkali. After the addition of the third component, the surfactant aids in the desorption of the bubbles from the surface, thereby obtaining a surface with a uniform appearance.
Test example 3
As can be seen from examples 1-4, different reflectivities can be obtained for different ratios of "mountain" and "basin". Samples obtained in example 4 and comparative examples 1 and 2 were selected and tested for spectral reflectance, and the results are shown in fig. 8. Meanwhile, the optical photographs of the three back surface samples are shown in fig. 9, (a) is the pyramidal textured structure in comparative example 1, (b) is the novel structure in example 4, and (c) is the flat surface structure in comparative example 2.
The results of the spectral testing showed that the pyramidal textured structure of comparative example 1 had the lowest reflectivity, with an average reflectivity of 11.1%. The flat surface structure in comparative example 2 had the highest reflectance, and the average reflectance at 300-1000nm was 47.8%. The average reflectivity of the novel structure obtained in the embodiment 4 of the invention is 32.8%. As can be seen from the photograph of fig. 9, comparative example 1 exhibited a bluish black color due to significant light absorption, comparative example 2 was a mirror-like bright light effect, and the sample obtained in example 4 exhibited a uniformly uniform light gray color, which was shown to correspond to the test results of spectral reflectance.
Therefore, the novel back surface structure obtained by the invention mixes the (100) crystal face and the (111) crystal face, the more uniform 'mountain peak' and 'basin' structures are between the pyramid texture structure and the flat surface structure, and the reflectivity is between the two structures.
Test example 4
Solar cells were prepared based on the novel back structure of single-crystal silicon obtained in example 4 and the back structures in comparative examples 1 and 2, and electrical parameters thereof were tested as shown in table 1.
Table 1 solar cell efficiency test results
As can be seen from table 1: the conversion efficiency of the solar cell with the flat back surface in the comparative example 2 is 23.42%, the conversion efficiency of the cell with the back pyramid textured structure in the comparative example 1 is 23.59%, and the conversion efficiency of the cell with the back structure treated by the embodiment 4 of the invention is 23.64%.
The contact resistance Rs is reduced from 0.0037 Ω to 0.0016 Ω compared to a flat surface structure, improving the fill factor FF. The efficiency is obviously improved by combining with the improvement of the short-circuit current, and the efficiency is increased by 0.22 percent.
Compared with the back structure of the pyramid texture, the method is mainly characterized in that the open-circuit voltage is improved, so that the efficiency is improved by 0.05%. Therefore, from the efficiency comparison of the solar cell, the chemical composition and the technical scheme for manufacturing the novel back surface structure of the solar cell are suitable for the TOPCon solar cell and have obvious technical advantages.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (9)
1. The chemical auxiliary agent for forming the back structure of the solar cell is characterized in that the raw materials comprise, by mass, 0.5-10 parts of a first component, 0.5-10 parts of a second component and 0.01-1 part of a third component;
the first component is selected from at least one of locust bean gum, konjac gum and pectin; the second component is selected from at least one of polyhexamethylene guanidine, polyethyleneimine, sodium polytereene sulfonate and sodium polyethylene sulfonate; the third component is at least one selected from alkylphenol ethoxylates, fatty alcohol-polyoxyethylene ether and isomeric alcohol-polyoxyethylene ether.
2. The chemical auxiliary agent according to claim 1, wherein the raw materials comprise, by mass, 0.5-5 parts of the first component, 0.5-3 parts of the second component, and 0.01-0.5 part of the third component.
3. A method for preparing a chemical assistant for forming a back structure of a solar cell, which is prepared by using the raw material of the chemical assistant according to any one of claims 1 to 2.
4. The method of claim 3, comprising: mixing the raw materials of the chemical auxiliary agent and water to obtain an aqueous solution, wherein the mass fractions of the first component, the second component and the third component in the aqueous solution are 0.5-10%, 0.5-10% and 0.01-0.5% in sequence.
5. An alkaline etching solution for forming a back structure of a solar cell, which is obtained by mixing the chemical auxiliary agent prepared by the preparation method of claim 3 or 4 with an alkaline solution.
6. The alkaline etching solution of claim 5, wherein the mass fraction of the alkaline solution is controlled to be 1-2%, and the volume ratio of the alkaline solution to the aqueous solution of the chemical auxiliary agent is 100:0.5-100: 2;
the alkaline solution is sodium hydroxide solution or potassium hydroxide solution.
7. A preparation method of a solar cell back structure is characterized in that the alkaline etchant of claim 5 or 6 is used for etching a silicon wafer.
8. The method of manufacturing according to claim 7, comprising: reacting the silicon chip in the alkaline corrosive liquid for 120-600s, wherein the temperature of the alkaline corrosive liquid is 50-95 ℃;
firstly, pre-cleaning the silicon wafer, and then reacting the silicon wafer with the alkaline corrosive liquid;
after reacting with the alkaline corrosive liquid, adopting hydrogen peroxide to perform immersion cleaning to remove residual organic matters on the surface.
9. A monocrystalline silicon solar cell, characterized in that the solar cell back structure prepared by the preparation method of claim 7 or 8 is used.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111058843.3A CN113502163B (en) | 2021-09-10 | 2021-09-10 | Chemical auxiliary agent for forming solar cell back structure, and preparation method and application thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111058843.3A CN113502163B (en) | 2021-09-10 | 2021-09-10 | Chemical auxiliary agent for forming solar cell back structure, and preparation method and application thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN113502163A CN113502163A (en) | 2021-10-15 |
CN113502163B true CN113502163B (en) | 2021-12-03 |
Family
ID=78017132
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202111058843.3A Active CN113502163B (en) | 2021-09-10 | 2021-09-10 | Chemical auxiliary agent for forming solar cell back structure, and preparation method and application thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN113502163B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115377252B (en) * | 2022-10-24 | 2023-01-13 | 英利能源发展(天津)有限公司 | Method for inhibiting polycrystalline silicon surface explosion film growth by PECVD method |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009028762A1 (en) * | 2009-08-20 | 2011-03-03 | Rena Gmbh | Process for etching silicon surfaces |
US20120295447A1 (en) * | 2010-11-24 | 2012-11-22 | Air Products And Chemicals, Inc. | Compositions and Methods for Texturing of Silicon Wafers |
CN102181941B (en) * | 2011-04-08 | 2013-01-30 | 光为绿色新能源股份有限公司 | Method for preparing textured surface of polycrystalline silicon |
KR20120119796A (en) * | 2011-04-22 | 2012-10-31 | 동우 화인켐 주식회사 | Texture etching solution composition and texture etching method of crystalline silicon wafers |
CN103890139A (en) * | 2011-10-19 | 2014-06-25 | 东友精细化工有限公司 | Texture etching solution composition and texture etching method of crystalline silicon wafers |
KR20140082220A (en) * | 2012-12-24 | 2014-07-02 | 동우 화인켐 주식회사 | Texture etching solution composition and texture etching method of crystalline silicon wafers |
CN104294368A (en) * | 2013-07-19 | 2015-01-21 | 东友精细化工有限公司 | Texture etching solution composition and texture etching method of crystalline silicon wafers |
TWI635160B (en) * | 2014-03-07 | 2018-09-11 | 東友精細化工有限公司 | Texture etching solution composition and texture etching method of crystalline silicon wafers |
CN105088351A (en) * | 2015-08-25 | 2015-11-25 | 安徽飞阳能源科技有限公司 | Low-reflectivity silicon wafer texturing agent and preparation method thereof |
CN106521634A (en) * | 2016-10-18 | 2017-03-22 | 湖州三峰能源科技有限公司 | Auxiliary chemical composition used for monocrystalline silicon or polycrystalline silicon acidic texturization and application thereof |
CN106676636A (en) * | 2017-01-10 | 2017-05-17 | 何秀英 | Chemical additive for texture etching of silicon crystal surface |
CN109713057A (en) * | 2018-12-18 | 2019-05-03 | 武汉风帆电化科技股份有限公司 | A kind of polysilicon wet-method texturing manufacturing process |
CN110257072A (en) * | 2019-06-13 | 2019-09-20 | 常州时创能源科技有限公司 | Silicon wafer one texture-etching side and etching edge additive and its application |
EP3761766A1 (en) * | 2019-07-03 | 2021-01-06 | AT & S Austria Technologie & Systemtechnik Aktiengesellschaft | Anisotropic etching using additives |
CN112812776A (en) * | 2019-11-15 | 2021-05-18 | 苏州阿特斯阳光电力科技有限公司 | Corrosive liquid and preparation method and application thereof |
-
2021
- 2021-09-10 CN CN202111058843.3A patent/CN113502163B/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN113502163A (en) | 2021-10-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR20180001513A (en) | A method for producing a textured structure of a crystalline silicon solar cell | |
CN102185011A (en) | Texturing method for solar cell | |
CN106024988B (en) | The black silicon of one-step method wet method prepares and surface treatment method | |
CN102181935B (en) | Method and corrosive liquid for making texture surface of monocrystalline silicon | |
CN107924836B (en) | Method for texturing surface of monocrystalline silicon wafer | |
CN102356467B (en) | The silicon substrate of matter structure and method | |
CN102212885A (en) | Texturing method for polycrystalline silicon solar cells | |
CN106521634A (en) | Auxiliary chemical composition used for monocrystalline silicon or polycrystalline silicon acidic texturization and application thereof | |
WO2023097973A1 (en) | Silicon wafer and preparation method therefor, and solar cell | |
CN113502163B (en) | Chemical auxiliary agent for forming solar cell back structure, and preparation method and application thereof | |
CN114350265A (en) | Monocrystalline silicon alkali polishing additive and use method thereof | |
CN111455467A (en) | Monocrystalline silicon texturing additive, texturing method and textured monocrystalline silicon piece preparation method | |
JP2022545188A (en) | Perovskite/silicon tandem photovoltaic device | |
Sreejith et al. | An additive-free non-metallic energy efficient industrial texturization process for diamond wire sawn multicrystalline silicon wafers | |
CN110524398A (en) | A kind of additive for the polishing of crystalline silicon acidity and acid polishing method | |
Sreejith et al. | A low cost additive-free acid texturing process for large area commercial diamond-wire-sawn multicrystalline silicon solar cells | |
CN108660510A (en) | A kind of manufacture of novel fine-hair maring using monocrystalline silicon slice additive and simple etching method | |
CN110518075B (en) | Black silicon passivation film, and preparation method and application thereof | |
KR20120119796A (en) | Texture etching solution composition and texture etching method of crystalline silicon wafers | |
Li et al. | Effect of the anisotropy of etching surface morphology on light-trapping and photovoltaic conversion efficiencies of silicon solar cell | |
CN115216301B (en) | Texturing solution for monocrystalline silicon and texturing method | |
Lévy‐Clément et al. | Macropore formation on p‐type multicrystalline silicon and solar cells | |
CN116463723A (en) | Monocrystalline silicon wafer texturing method for reducing light reflection loss | |
CN114823943B (en) | Suede structure, monocrystalline silicon wafer containing same, and texturing method and application | |
CN115506030A (en) | Monocrystalline silicon wet etching texturing additive, monocrystalline silicon wet etching texturing solution containing monocrystalline silicon wet etching texturing additive, and preparation method and application of monocrystalline silicon wet etching texturing solution |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |