CN103710705B - A kind of additive of polycrystalline silicon wafer acidity texture preparation liquid and application thereof - Google Patents
A kind of additive of polycrystalline silicon wafer acidity texture preparation liquid and application thereof Download PDFInfo
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- CN103710705B CN103710705B CN201310717249.XA CN201310717249A CN103710705B CN 103710705 B CN103710705 B CN 103710705B CN 201310717249 A CN201310717249 A CN 201310717249A CN 103710705 B CN103710705 B CN 103710705B
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Abstract
The present invention relates to a kind of additive and application thereof of polycrystalline silicon wafer acidity texture preparation liquid, this additive comprises following component: tetramethylolmethane, sodium acetate, anhydrous, polyoxyethylene glycol and deionized water.Apply the method that above-mentioned additive carries out sour making herbs into wool, comprise the following steps: 1) by tetramethylolmethane, sodium acetate, anhydrous and polyoxyethylene glycol are dissolved in deionized water, obtained additive; 2) hydrofluoric acid and nitric acid are dissolved in obtained sour mixing solutions in deionized water, then additive are joined in described sour mixing solutions, obtain acid Woolen-making liquid; 3) mortar is cut polysilicon chip or diamond wire cutting polysilicon chip is immersed in acid Woolen-making liquid and carries out making herbs into wool.The present invention can make the reflectivity of diamond wire cutting polysilicon chip after the conventional leather producing process making herbs into wool of luminance factor of diamond wire cutting polysilicon chip after making herbs into wool low by about 6%, makes the reflectivity of mortar cutting polysilicon chip after the conventional leather producing process of luminance factor of mortar cutting polysilicon chip after making herbs into wool low by about 3 ~ 5%.
Description
Technical field
The present invention relates to a kind of additive and application thereof of polycrystalline silicon wafer acidity texture preparation liquid, be specifically related to a kind ofly to be applied to the additive of the acid making herbs into wool of polysilicon chip of mortar cutting and diamond wire cutting simultaneously and to apply the method that this additive carries out sour making herbs into wool.
Background technology
At present in the cutting of photovoltaic art crystal silicon chip used mainly to adopt mortar multi-wire saw technology, but the problem such as this technology exists that cutting technique inefficiency, cutting processing cost are high, the exhaust emission of cutting waste mortar is afterwards large.By contrast, because having, cutting efficiency is high, cutting processing cost is low and the advantage such as clean environment for solid abrasive diamond fretsaw cutting (be called for short diamond wire cutting) technology, receive increasing concern, be expected to the future thrust becoming the hard and fragile material microtomies such as crystalline silicon.
Mortar multi-wire saw utilizes the Stainless Steel Wire of copper coating nickel very long to be one by one looped around on driving wheel and tightening pulley, carries out the cutting technique of high-speed cutting under the drive of the driving wheel that runs up.In cutting process, line of cut does not carry out machining, and its Main Function brings cutting zone by based on the grinding slurry of polyoxyethylene glycol and silicon carbide micro-powder into and to abrasive material applied load, finally carry out grinding cutting by abrasive material to silicon materials at a high speed.Diamond particles normally to anchor at plating or the resin method of fixing by diamond fretsaw to be made in the nickel base alloy layer on Stainless Steel Wire top layer.In cutting process, diamond fretsaw runs up, and directly carries out grinding cutting with certain pressure to silicon materials.Compared with " three bodies are processed " of mortar multi-wire saw, diamond fretsaw belongs to " disome processing ", its working (machining) efficiency is the several times of mortar multi-wire saw, and when cutting processing silicon chip without the need to adding the ground slurries such as silicon carbide micro-powder, can significantly reduce the tooling cost of silicon chip and environmental pollution is little.
Because the incision principle of diamond wire cutting is different from the incision principle of mortar multi-wire saw, so there is very big-difference in the pattern of silicon chip surface that two kinds of cutting techniques obtain.The silicon chip surface of mortar multi-wire saw is mainly based on the pattern that brittle crush breaks to form, and silicon chip surface exists much small irregular pit (as shown in Figure 1).And in the silicon chip surface of diamond wire cutting except there is irregular pit that brittle crush breaks to form, also there is the smooth cutting line formed by ductile grinding cutting in a large number, so the silicon chip surface of final diamond wire cutting presents the mixing pattern (as shown in Figure 2) of fragility and plasticity.
In manufacture of solar cells process, silicon chip surface texturing (making herbs into wool), at reduction surface albedo important role, is also one of effective means improving solar cell photoelectric transformation efficiency.Leather producing process many employings HF-HNO of current polysilicon chip
3-H
2the wet-chemical etching technique of the acidic solution of O system, what this acidic solution utilized is carry out isotropic etch to the various defects of silicon chip surface, thus reduces silicon chip surface reflectivity.Mortar multiline cut silicon chips surface is mainly irregular pit, defect distribution good uniformity, therefore passes through HF-HNO
3-H
2the leather producing process of O system can obtain whole the uniform matte of corrosion (as shown in Figure 3).But silicon wafer cut by diamond wire surface is the mixing pattern of irregular pit and smooth cutting line composition, surface imperfection skewness, therefore by conventional HF-HNO
3-H
2the leather producing process of O system cannot obtain whole the uniform matte of corrosion (as shown in Figure 4).
Application number be 201110112185.1 Chinese patent disclose a kind of etching method of silicon wafer cut by diamond wire.This patent is at HF-HNO
3h is added in system
2sO
4or H
3pO
4, pass through H
2sO
4or H
3pO
4catalysis and shock absorption control speed of reaction, thus reduce the surface albedo of silicon chip after making herbs into wool, but this patent need add a large amount of H
2sO
4or H
3pO
4reach the target reducing reflectivity, making herbs into wool cost is higher, and the making herbs into wool system of this patent is rich HF system, and after making herbs into wool, silicon chip surface easily occurs cheating by deep corrosion the dark line formed, and can have a negative impact to the electricity conversion of solar cell.Application number be 201010540761.8 and 201110212876.9 Chinese patent individually disclose the additive of two kinds of polycrystalline silicon wafer acidity texture preparation liquids, wherein application number for the additive component described in the patent of 201010540761.8 be H
2sO
4, H
3pO
4and H
2o, application number for the additive component described in the patent of 201110212876.9 be polyvinylpyrrolidone, trolamine and water.
Summary of the invention
Technical problem to be solved by this invention is to provide and a kind ofly can be applied to the additive of the acid making herbs into wool of polysilicon chip of mortar cutting and diamond wire cutting simultaneously and applies the method that this additive carries out sour making herbs into wool.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of additive of polycrystalline silicon wafer acidity texture preparation liquid, comprises following component: tetramethylolmethane, sodium acetate, anhydrous, polyoxyethylene glycol and deionized water.
Wherein, the weight percentage of described tetramethylolmethane is 0.5 ~ 2%, and the weight percent of described sodium acetate, anhydrous is 0.5 ~ 2%, and the weight percentage of described polyoxyethylene glycol is 0.5 ~ 2%, and the weight percentage of described deionized water is 94 ~ 98.5%.
The invention has the beneficial effects as follows: additive nontoxicity of the present invention, non-corrosiveness, preparation and operation simply, have good actual application value.
On the basis of technique scheme, the present invention can also do following improvement.
Further, the molecular weight of described polyoxyethylene glycol is 200 ~ 5000, is preferably 400 ~ 1000.
Further, described polyoxyethylene glycol is any one in the polyoxyethylene glycol of the polyoxyethylene glycol of molecular weight 200, the polyoxyethylene glycol of molecular weight 300, the polyoxyethylene glycol of molecular weight 400, the polyoxyethylene glycol of molecular weight 600, the polyoxyethylene glycol of molecular weight 1000, the polyoxyethylene glycol of molecular weight 1500, the polyoxyethylene glycol of molecular weight 2000, the polyoxyethylene glycol of molecular weight 4000 or molecular weight 5000.Be preferably the polyoxyethylene glycol of molecular weight 400, the polyoxyethylene glycol of molecular weight 600 or molecular weight 1000 polyoxyethylene glycol in any one.
Another technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind ofly apply the method that above-mentioned additive carries out sour making herbs into wool, comprises the following steps:
1) by tetramethylolmethane, sodium acetate, anhydrous and polyoxyethylene glycol are dissolved in deionized water, obtained additive, wherein,
The weight percentage of described tetramethylolmethane is 0.5 ~ 2%, and the weight percent of described sodium acetate, anhydrous is 0.5 ~ 2%, and the weight percentage of described polyoxyethylene glycol is 0.5 ~ 2%, and the weight percentage of described deionized water is 94 ~ 98.5%;
2) hydrofluoric acid and nitric acid are dissolved in obtained sour mixing solutions in deionized water, then the additive obtained in step 1) are joined in described sour mixing solutions, obtain acid Woolen-making liquid, wherein,
The weight percentage of described hydrofluoric acid is 5 ~ 10%, and the weight percentage of described nitric acid is 35 ~ 50%, and the weight percentage of additive is 0.2 ~ 1%, and the weight percentage of described deionized water is 39 ~ 59.8%;
3) mortar is cut polysilicon chip or diamond wire cutting polysilicon chip is immersed in step 2) in carry out making herbs into wool in obtained acid Woolen-making liquid.
Further, in step 3), described in carry out the processing condition of making herbs into wool as follows: the making herbs into wool temperature of making herbs into wool process is 5 ~ 25 DEG C, is preferably 5 ~ 10 DEG C; The making herbs into wool time is 60 ~ 200 seconds, is preferably 100 ~ 150 seconds.
The present invention is by cutting the sour leather producing process of polysilicon chip in mortar cutting and diamond wire by this additive application, the reflectivity of diamond wire cutting polysilicon chip after the conventional leather producing process making herbs into wool of luminance factor of diamond wire cutting polysilicon chip after making herbs into wool can be made low by about 6%, make the reflectivity of mortar cutting polysilicon chip after the conventional leather producing process of luminance factor of mortar cutting polysilicon chip after making herbs into wool low by about 3 ~ 5%.
Another technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of application of additive of above-mentioned polycrystalline silicon wafer acidity texture preparation liquid, and described additive can be applied to mortar cutting and diamond wire cutting simultaneously.
Accompanying drawing explanation
Fig. 1 is the scanning electron microscope diagram sheet of mortar multi-wire saw polysilicon chip;
Fig. 2 is the scanning electron microscope diagram sheet of diamond wire cutting polysilicon chip;
Fig. 3 is the scanning electron microscope diagram sheet after the conventional making herbs into wool of mortar multi-wire saw polysilicon chip;
Fig. 4 is the scanning electron microscope diagram sheet after the making herbs into wool of mortar polycrystalline cutting polysilicon chip additive;
Fig. 5 is the scanning electron microscope diagram sheet after the conventional making herbs into wool of diamond wire cutting polysilicon chip;
Fig. 6 is the scanning electron microscope diagram sheet after the additive making herbs into wool of the diamond wire cutting polysilicon chip specific embodiment of the invention 2.
Embodiment
Be described principle of the present invention and feature below in conjunction with accompanying drawing, example, only for explaining the present invention, is not intended to limit scope of the present invention.
Embodiment 1
An additive for polycrystalline silicon wafer acidity texture preparation liquid, comprises following component: tetramethylolmethane, sodium acetate, anhydrous, polyoxyethylene glycol and deionized water.
Wherein, the weight percentage of described tetramethylolmethane is 0.5%, and the weight percent of described sodium acetate, anhydrous is 0.5%, and the weight percentage of described polyoxyethylene glycol is 0.5%, and surplus is deionized water.
Described polyoxyethylene glycol is the polyoxyethylene glycol of molecular weight 200.
Apply the method that above-mentioned additive carries out sour making herbs into wool, comprise the following steps:
1) additive preparation: by tetramethylolmethane, sodium acetate, anhydrous and polyoxyethylene glycol are dissolved in deionized water, obtained additive;
2) acid Woolen-making liquid is prepared: hydrofluoric acid and nitric acid are dissolved in obtained sour mixing solutions in deionized water, are then joined in described sour mixing solutions by the additive obtained in step 1), obtain acid Woolen-making liquid, wherein,
The weight percentage of described hydrofluoric acid is 5%, and the weight percentage of described nitric acid is 35%, and the weight percentage of additive is 0.2%, and surplus is deionized water;
3) making herbs into wool: mortar is cut polysilicon chip or diamond wire cutting polysilicon chip is immersed in step 2) in carry out making herbs into wool in obtained acid Woolen-making liquid, the making herbs into wool temperature of making herbs into wool process is 25 DEG C, and the making herbs into wool time is 60 seconds.
Embodiment 2
An additive for polycrystalline silicon wafer acidity texture preparation liquid, comprises following component: tetramethylolmethane, sodium acetate, anhydrous, polyoxyethylene glycol and deionized water.
Wherein, the weight percentage of described tetramethylolmethane is 2%, and the weight percent of described sodium acetate, anhydrous is 2%, and the weight percentage of described polyoxyethylene glycol is 2%, and surplus is deionized water.
Described polyoxyethylene glycol is the polyoxyethylene glycol of molecular weight 400.
Apply the method that above-mentioned additive carries out sour making herbs into wool, comprise the following steps:
1) additive preparation: by tetramethylolmethane, sodium acetate, anhydrous and polyoxyethylene glycol are dissolved in deionized water, obtained additive;
2) acid Woolen-making liquid is prepared: hydrofluoric acid and nitric acid are dissolved in obtained sour mixing solutions in deionized water, are then joined in described sour mixing solutions by the additive obtained in step 1), obtain acid Woolen-making liquid, wherein,
The weight percentage of described hydrofluoric acid is 10%, and the weight percentage of described nitric acid is 50%, and the weight percentage of additive is 1%, and surplus is deionized water;
3) making herbs into wool: mortar is cut polysilicon chip or diamond wire cutting polysilicon chip is immersed in step 2) in carry out making herbs into wool in obtained acid Woolen-making liquid, the making herbs into wool temperature of making herbs into wool process is 5 DEG C, and the making herbs into wool time is 200 seconds.
Embodiment 3
An additive for polycrystalline silicon wafer acidity texture preparation liquid, comprises following component: tetramethylolmethane, sodium acetate, anhydrous, polyoxyethylene glycol and deionized water.
Wherein, the weight percentage of described tetramethylolmethane is 1%, and the weight percent of described sodium acetate, anhydrous is 1%, and the weight percentage of described polyoxyethylene glycol is 1%, and surplus is deionized water.
Described polyoxyethylene glycol is the polyoxyethylene glycol of molecular weight 1000.
Apply the method that above-mentioned additive carries out sour making herbs into wool, comprise the following steps:
1) additive preparation: by tetramethylolmethane, sodium acetate, anhydrous and polyoxyethylene glycol are dissolved in deionized water, obtained additive;
2) acid Woolen-making liquid is prepared: hydrofluoric acid and nitric acid are dissolved in obtained sour mixing solutions in deionized water, are then joined in described sour mixing solutions by the additive obtained in step 1), obtain acid Woolen-making liquid, wherein,
The weight percentage of described hydrofluoric acid is 6%, and the weight percentage of described nitric acid is 40%, and the weight percentage of additive is 0.5%, and surplus is deionized water;
3) making herbs into wool: mortar is cut polysilicon chip or diamond wire cutting polysilicon chip is immersed in step 2) in carry out making herbs into wool in obtained acid Woolen-making liquid, the making herbs into wool temperature of making herbs into wool process is 10 DEG C, and the making herbs into wool time is 100 seconds.
Embodiment 4
An additive for polycrystalline silicon wafer acidity texture preparation liquid, comprises following component: tetramethylolmethane, sodium acetate, anhydrous, polyoxyethylene glycol and deionized water.
Wherein, the weight percentage of described tetramethylolmethane is 1.5%, and the weight percent of described sodium acetate, anhydrous is 1.5%, and the weight percentage of described polyoxyethylene glycol is 1.5%, and surplus is deionized water.
Described polyoxyethylene glycol is the polyoxyethylene glycol of molecular weight 1500.
Apply the method that above-mentioned additive carries out sour making herbs into wool, comprise the following steps:
1) additive preparation: by tetramethylolmethane, sodium acetate, anhydrous and polyoxyethylene glycol are dissolved in deionized water, obtained additive;
2) acid Woolen-making liquid is prepared: hydrofluoric acid and nitric acid are dissolved in obtained sour mixing solutions in deionized water, are then joined in described sour mixing solutions by the additive obtained in step 1), obtain acid Woolen-making liquid, wherein,
The weight percentage of described hydrofluoric acid is 8%, and the weight percentage of described nitric acid is 45%, and the weight percentage of additive is 0.8%, and surplus is deionized water;
3) making herbs into wool: mortar is cut polysilicon chip or diamond wire cutting polysilicon chip is immersed in step 2) in carry out making herbs into wool in obtained acid Woolen-making liquid, the making herbs into wool temperature of making herbs into wool process is 15 DEG C, and the making herbs into wool time is 150 seconds.
Embodiment 5
An additive for polycrystalline silicon wafer acidity texture preparation liquid, comprises following component: tetramethylolmethane, sodium acetate, anhydrous, polyoxyethylene glycol and deionized water.
Wherein, the weight percentage of described tetramethylolmethane is 1.8%, and the weight percent of described sodium acetate, anhydrous is 1.8%, and the weight percentage of described polyoxyethylene glycol is 1.8%, and surplus is deionized water.
Described polyoxyethylene glycol is the polyoxyethylene glycol of molecular weight 5000.
Apply the method that above-mentioned additive carries out sour making herbs into wool, comprise the following steps:
1) additive preparation: by tetramethylolmethane, sodium acetate, anhydrous and polyoxyethylene glycol are dissolved in deionized water, obtained additive;
2) acid Woolen-making liquid is prepared: hydrofluoric acid and nitric acid are dissolved in obtained sour mixing solutions in deionized water, are then joined in described sour mixing solutions by the additive obtained in step 1), obtain acid Woolen-making liquid, wherein,
The weight percentage of described hydrofluoric acid is 9%, and the weight percentage of described nitric acid is 42%, and the weight percentage of additive is 0.9%, and surplus is deionized water;
3) making herbs into wool: mortar is cut polysilicon chip or diamond wire cutting polysilicon chip is immersed in step 2) in carry out making herbs into wool in obtained acid Woolen-making liquid, the making herbs into wool temperature of making herbs into wool process is 20 DEG C, and the making herbs into wool time is 120 seconds.
Below by way of two specific embodiments to be specifically described the present invention.
Specific embodiment 1
Specific embodiment 1 provides a comparative example, for not applying the conventional etching method of additive of the present invention:
Adopt following steps:
1) prepare acid Woolen-making liquid: under stirring, be the hydrofluoric acid of 40% by 2L concentration, 8L concentration be 65 ~ 68% nitric acid and 5L deionized water mix;
2) making herbs into wool: cut by mortar in the above-mentioned acid Woolen-making liquid of polysilicon chip immersion and carry out making herbs into wool, making herbs into wool temperature is 7 DEG C, and the making herbs into wool time is 80s.Cut by diamond wire in the above-mentioned acid Woolen-making liquid of polysilicon chip immersion and carry out making herbs into wool, making herbs into wool temperature is 7 DEG C, and the making herbs into wool time is 90s.
After making herbs into wool, the surface albedo of mortar cutting polysilicon chip is 24.0%, and the diamond wire cutting polysilicon chip surface albedo after making herbs into wool is 27.0%.Fig. 3 gives the scanning electron microscope diagram sheet of the mortar cutting polysilicon chip surface matte obtained, Fig. 5 gives the scanning electron microscope diagram sheet of the diamond wire cutting polysilicon chip surface matte obtained, the known matte obtaining size inequality, skewness from picture.
Specific embodiment 2
Specific embodiment 2 is the etching method applying additive of the present invention, adopts following steps:
1) additive preparation: under stirring, by 0.5g tetramethylolmethane, 1.0g sodium acetate, anhydrous and 1.5g polyoxyethylene glycol (molecular weight 400) to be dissolved in 97g deionized water (that is: in the additive prepared, the weight percentage of described tetramethylolmethane is 0.5%, the weight percentage of described sodium acetate, anhydrous is 1%, and the weight percentage of described polyoxyethylene glycol is 1.5%);
2) acid Woolen-making liquid is prepared: under stirring, be the hydrofluoric acid of 40% by 2L concentration, 8L concentration be 65 ~ 68% nitric acid and 5L deionized water mix, then add the additive that 75mL is above-mentioned, stir (that is: in the acid Woolen-making liquid prepared, the weight percentage of described hydrofluoric acid is 5%, the weight percentage of described nitric acid is 40%, and the weight percentage of described additive is 0.4%);
3) making herbs into wool:
Cut by mortar in the above-mentioned acid Woolen-making liquid of polysilicon chip immersion and carry out making herbs into wool, making herbs into wool temperature is 7 DEG C, and the making herbs into wool time is 100 seconds.
Cut by diamond wire in the above-mentioned acid Woolen-making liquid of polysilicon chip immersion and carry out making herbs into wool, making herbs into wool temperature is 7 DEG C, and the making herbs into wool time is 120 seconds.
Mortar cutting polysilicon chip surface albedo after making herbs into wool is 19.5%, and the diamond wire cutting polysilicon chip surface albedo after making herbs into wool is 20.5%.Fig. 4 gives the scanning electron microscope diagram sheet of the mortar cutting polysilicon chip surface matte obtained, Fig. 6 give obtain diamond wire cutting polysilicon chip surface matte scanning electron microscope diagram sheet, as we know from the figure apply additive of the present invention to the matte size obtained after silicon wafer wool making and distribution all better than conventional making herbs into wool.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (5)
1. an additive for polycrystalline silicon wafer acidity texture preparation liquid, is characterized in that, comprises following component: tetramethylolmethane, sodium acetate, anhydrous, polyoxyethylene glycol and deionized water;
Wherein, the weight percentage of described tetramethylolmethane is 0.5 ~ 2%, and the weight percent of described sodium acetate, anhydrous is 0.5 ~ 2%, and the weight percentage of described polyoxyethylene glycol is 0.5 ~ 2%, and the weight percentage of described deionized water is 94 ~ 98.5%,
Described polyoxyethylene glycol is any one in the polyoxyethylene glycol of the polyoxyethylene glycol of molecular weight 200, the polyoxyethylene glycol of molecular weight 300, the polyoxyethylene glycol of molecular weight 400, the polyoxyethylene glycol of molecular weight 600, the polyoxyethylene glycol of molecular weight 1000, the polyoxyethylene glycol of molecular weight 1500, the polyoxyethylene glycol of molecular weight 2000, the polyoxyethylene glycol of molecular weight 4000 or molecular weight 5000.
2. application rights requires that the additive described in 1 carries out a method for sour making herbs into wool, it is characterized in that, comprises the following steps:
1) by tetramethylolmethane, sodium acetate, anhydrous and polyoxyethylene glycol are dissolved in deionized water, obtained additive, wherein,
The weight percentage of described tetramethylolmethane is 0.5 ~ 2%, and the weight percent of described sodium acetate, anhydrous is 0.5 ~ 2%, and the weight percentage of described polyoxyethylene glycol is 0.5 ~ 2%, and the weight percentage of described deionized water is 94 ~ 98.5%;
2) hydrofluoric acid and nitric acid to be dissolved in deionized water obtained sour mixing solutions, then by step 1) in obtained additive join in described sour mixing solutions, obtain acid Woolen-making liquid, wherein,
The weight percentage of described hydrofluoric acid is 5 ~ 10%, and the weight percentage of described nitric acid is 35 ~ 50%, and the weight percentage of additive is 0.2 ~ 1%, and the weight percentage of described deionized water is 39 ~ 59.8%;
3) mortar is cut polysilicon chip or diamond wire cutting polysilicon chip is immersed in step 2) in carry out making herbs into wool in obtained acid Woolen-making liquid.
3. the method for sour making herbs into wool according to claim 2, is characterized in that, in step 3) in, described in carry out the processing condition of making herbs into wool as follows: the making herbs into wool temperature of making herbs into wool process is 5 ~ 25 DEG C, and the making herbs into wool time is 60 ~ 200 seconds.
4. the method for sour making herbs into wool according to claim 3, is characterized in that, the making herbs into wool temperature of described making herbs into wool process is 5 ~ 10 DEG C, and the making herbs into wool time is 100 ~ 150 seconds.
5. an application for the additive of polycrystalline silicon wafer acidity texture preparation liquid according to claim 1, is characterized in that, described additive can be applied to mortar cutting and diamond wire cutting simultaneously.
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| CN104294369A (en) * | 2014-11-13 | 2015-01-21 | 苏州润阳光伏科技有限公司 | Acid texturing additive for polysilicon film and use method thereof |
| CN104576830B (en) * | 2014-12-30 | 2017-02-22 | 江西赛维Ldk太阳能高科技有限公司 | Texturing pretreatment liquid and texturing pretreatment method for diamond wire cutting polycrystalline silicon sheet, texturing pretreatment silicon sheet and application of texturing pretreatment silicon sheet |
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