CN110281408A - A kind of multi-line cutting method and device of silicon rod - Google Patents
A kind of multi-line cutting method and device of silicon rod Download PDFInfo
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- CN110281408A CN110281408A CN201910589187.6A CN201910589187A CN110281408A CN 110281408 A CN110281408 A CN 110281408A CN 201910589187 A CN201910589187 A CN 201910589187A CN 110281408 A CN110281408 A CN 110281408A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/007—Use, recovery or regeneration of abrasive mediums
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0076—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for removing dust, e.g. by spraying liquids; for lubricating, cooling or cleaning tool or work
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
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- Crystallography & Structural Chemistry (AREA)
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- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
The present invention relates to field of semiconductor fabrication more particularly to the cutting methods and device of a kind of silicon rod.The multi-line cutting method of silicon rod, comprising: adhere to mix acid liquor on the cutting line of Multi-wire cutting device, carry mix acid liquor using the cutting line and cutting process is carried out to silicon rod；It is every to pass through a predetermined time during cutting process, cleaning solution, the mix acid liquor on cleaning removal silicon rod cut surface are sprayed on the cut surface of silicon rod；After the sprinkling cleaning solution, if not formed silicon wafer, continues cutting process；If forming silicon wafer, stop cutting process.Multi-wire cutting device includes parallel main axis, and the side of the main shaft is arranged in cutting line, for spraying the first spray assembly of mix acid liquor on the cutting line；The side of silicon wafer cutting region is set, for the second spray assembly to the cut surface of silicon rod sprinkling cleaning solution.Multi-line cutting method cutting speed of the invention is fast, and the Si wafer quality obtained after cutting is high, and cutting loss is small, and noise is small.
Description
Technical field
The present invention relates to field of semiconductor fabrication more particularly to the cutting methods and device of a kind of silicon rod.
Background technique
Silicon chip process technology mainly has multi-thread mortar cutting and two kinds of inner circle cutting.Multi-wire saw comes relative to inner circle cutting
It says, cutting effect is high, and cut quality is good, and piece rate is high, therefore application is than wide.
The process principle of multi-thread mortar cutting is to take abrasive material (i.e. mortar) to cutting region by the movement of cutting line, is being cut
Under the high-speed motion of secant, abrasive material is allowed to crack in silicon crystal surface scrolls, the finished surface for the material that rubs, is embedded into
With broken, the final purpose for realizing material removal.The key of the technology is in the cutting power and cutting process of abrasive material
Thermodynamic behavior selects polyethylene glycol and silicon carbide to be configured to suspension, by mortar pipe in mortar jar in practical applications
Mortar spray on gauze, carry be ground opposite with silicon rod of mortar using steel wire and achieve the purpose that cutting, meanwhile, make in cutting
Used mortar is flow back into mortar jar again by return-flow system, and mortar is recycled until cutting is completed.Fig. 1~3 are existing
There is the structural schematic diagram of multi-thread mortar cutter device.
But multi-thread mortar cutting takes a long time there is also deficiency, cutting speed is only 4um/s or so, is such as cut
300mm silicon rod generally requires more than 20 hours；The silicon chip surface roughness of cutting is larger, generally existing bending, warpage, different silicon
The problems such as consistency of thickness of piece is poor；The problems such as equipment size is big, weight is big, and loud noise and vibration are generated when processing.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of multi-line cutting method of silicon rod and devices, and cutting speed is fast,
The Si wafer quality obtained after cutting is high, and cutting loss is small, and noise is small.
The present invention provides a kind of multi-line cutting methods of silicon rod, comprising the following steps:
Step (1): adhering to mix acid liquor on the cutting line of Multi-wire cutting device, carries mixed acid using the cutting line
Liquid carries out cutting process to silicon rod；
It is every to pass through a predetermined time during cutting process, cleaning solution is sprayed on the cut surface of silicon rod, clearly
It washes away except the mix acid liquor on silicon rod cut surface；
Step (2): after the sprinkling cleaning solution, if not formed silicon wafer, return step (1) continues cutting process；
If forming silicon wafer, stop cutting process.
Preferably, the cutting line is that chemical fibre monofilament or multifilament or silicon carbide coat answering for carbon fiber core formation
Condensation material line；
The chemical fibre is polytetrafluoroethylene fibre or ultra-high molecular weight polyethylene.
Preferably, the mix acid liquor includes nitric acid and hydrofluoric acid, and the volume ratio of the nitric acid and hydrofluoric acid is (1~3):
(5~7)；
The mass concentration of the nitric acid is 70%, and the mass concentration of the hydrofluoric acid is 50%.
Preferably, the mix acid liquor further include: one or more in buffer, additives and catalyst；
The buffer is one of water, boric acid, sulfuric acid, acetic acid and phosphoric acid or a variety of；
The additives are oxidant, reducing agent or metallic salt；
The catalyst is nitrite.
Preferably, the additive amount of the buffer is not more than the 50% of nitric acid and hydrofluoric acid gross mass, the additives
Additive amount is not more than the 10% of nitric acid and hydrofluoric acid gross mass, and the additive amount of the catalyst is not more than nitric acid and the total matter of hydrofluoric acid
The 10% of amount.
Preferably, the mix acid liquor is the mixture of nitric acid, hydrofluoric acid and acetic acid, the body of nitric acid, hydrofluoric acid and acetic acid
Product is than being (1~3): (5~7): (1~2)；
Nitric acid, hydrofluoric acid, acetic acid and sulfuric acid mixture, the volume ratio of nitric acid and hydrofluoric acid is (1~3): (5~7), institute
The gross mass for stating acetic acid and sulfuric acid accounts for the 20% of nitric acid and hydrofluoric acid gross mass；
The volume ratio of the mixture of nitric acid, hydrofluoric acid and hydrogen peroxide, nitric acid and hydrofluoric acid is (1~3): (5~7), described
The quality of hydrogen peroxide accounts for the 0.05~2% of nitric acid and hydrofluoric acid gross mass；Or
Nitric acid, hydrofluoric acid, phosphoric acid and bromine mixture, the nitric acid, hydrofluoric acid, phosphoric acid volume ratio be (1~3): (5
~7): (1~2), the quality of the bromine account for the 1% of nitric acid and hydrofluoric acid gross mass.
Preferably, the temperature when cutting process is 15~80 DEG C.
Preferably, the linear velocity when cutting process is 1~200mm/min.
Preferably, the predetermined time is 0.5~3 minute.
The present invention also provides a kind of Multi-wire cutting devices, including at least a pair of of parallel main axis, and are wound in the master
More parallel cutting lines on axis,
The side of the main shaft is set, for spraying the first spray assembly of mix acid liquor on the cutting line；
The side of silicon wafer cutting region is set, for the second spray assembly to the cut surface of silicon rod sprinkling cleaning solution.
Compared with prior art, the multi-line cutting method of silicon rod of the invention, comprising the following steps:
Spray cutting liquid on the cutting line of Multi-wire cutting device, using the cutting line carry mix acid liquor to silicon rod into
Row cutting process；
It is every to pass through a predetermined time during cutting process, then cleaning solution is sprayed on silicon rod cut surface, with
The acid solution of silicon rod cut surface is removed, cleaning removes the mix acid liquor on erosional surface.
The present invention cooperates multi-thread device to cut silicon rod using mix acid liquor, wherein suiting line carries acid solution in silicon rod
Specific region corroded, to form silicon wafer.The present invention has the advantages that following multiple:
(1) cutting efficiency is high, greatly shortens clipping time, improves production efficiency；
(2) Si wafer quality obtained is good, no cutting mark and damaging layer；Cutting line is avoided to generate deformation；
(3) cutting loss amount is small, and loss amount is controllable；By taking cutting line generallys use diameter 140um as an example, existing wire cutting list
Piece cuts loss late in 250um/pcs or more, and there are also the two-sided about 40um/pcs of mechanical processing trauma layer.Cutting line of the invention
Because stress is small different with material, diameter can be far smaller than 140um or even nanofiber application, and cutting quantity can be in 100~250um/
Pcs, and substantially not damaged layer.
(4) equipment that this method uses is simple, noiseless and vibration.
Detailed description of the invention
Fig. 1 shows the side structure schematic views of existing multi-thread mortar cutter device；
Fig. 2 indicates the overlooking structure diagram of existing multi-thread mortar cutter device；
Fig. 3 indicates the top view of the cut surface of existing multi-thread mortar cutter device；
Fig. 4 indicates the structural schematic diagram of Multi-wire cutting device of the present invention；
Diagram is explained:
1 is main shaft, and 2 be new spool, and 3 be old spool, and 4 be silicon rod to be cut, and 5 be mortar nozzle, and 6 be cutting line, and 7 are
Mortar, 8 be the first spray assembly, and 9 be the second spray assembly.
Specific embodiment
For a further understanding of the present invention, the preferred embodiment of the invention is described below with reference to embodiment, still
It should be appreciated that these descriptions are only further explanation the features and advantages of the present invention, rather than limiting the invention.
It is 70% that be related to nitric acid in the present invention, which be mass percentage concentration, and the mass percentage concentration of hydrofluoric acid is 50%, sulphur
The mass percentage concentration of acid is 30%~80%, and the mass percentage concentration of phosphoric acid is 20%~85%.
Embodiment of the invention discloses a kind of multi-line cutting methods of silicon rod, comprising the following steps:
Step (1): adhering to mix acid liquor on the cutting line of Multi-wire cutting device, carries mixed acid using the cutting line
Liquid carries out cutting process to silicon rod；
It is every to pass through a predetermined time during cutting process, cleaning solution is sprayed on silicon rod cut surface, is cleaned
Remove the mix acid liquor on silicon rod cut surface；
Step (2): after the sprinkling cleaning solution, if not formed silicon wafer, return step (1) continues cutting process；
If forming silicon wafer, stop cutting process.
The present invention cuts silicon rod using multi-thread device cooperation mix acid liquor, and cutting line carries mix acid liquor and silicon rod
Contact, mix acid liquor carries out chemical attack effect to the silicon of the contact position of cutting line and silicon rod, to form silicon wafer.It overcomes more
The number of drawbacks of line mortar cutting.
Wherein, the cutting line more preferably uses material that is acidproof, hydrophilic and being able to bear some strength and temperature.It is excellent
Selection of land, the cutting line is chemical fibre monofilament or multifilament or silicon carbide coats the composite material line that carbon fiber core is formed；
The chemical fibre is polytetrafluoroethylene fibre or ultra-high molecular weight polyethylene.
Preferably, the diameter of the cutting line is less than 140um, can reduce cutting loss late.
The mix acid liquor includes nitric acid and hydrofluoric acid, and the volume ratio of the nitric acid and hydrofluoric acid is (1~3): (5~7)；
The mass concentration of the nitric acid is 70%, and the mass concentration of the hydrofluoric acid is 50%.
Nitric acid is oxidant in the mix acid liquor, silicon can be oxidized to silica, forms one layer of cause on silicon rod surface
Close silica coating, both not soluble in water to be also insoluble in nitric acid, silica coating silicon below for film layer plays guarantor
Shield effect, tissue nitric acid further corrode silicon rod.Hydrofluoric acid is complexing agent, is mainly used for dissolving and removes silica.
So silicon is constantly oxidized by nitric acid under the action of mix acid liquor, the silica of generation is again constantly molten by hydrofluoric acid
Solution, so that cutting process be made continuously to carry out.It chemically reacts as follows:
Si+2HNO3→SiO2+2HNO2
2HNO2→NO+NO2+H2O
SiO2+6HF→H2SiF6+2H2O
The mix acid liquor cutting silicon rod is isotropic etch, and each crystal phase of silicon rod is by stepless action, cutting speed
Degree is fast, and the silicon chip surface of formation is more bright, and surface is not easy adsorbing contaminant.
In order to improve cutting after silicon wafer surface quality, it is preferable that the mix acid liquor further include: buffer, additives
With one of catalyst or a variety of；
The effect of the buffer is to slow down corrosion rate, reduce silicon face roughness, with effectively control rate of cutting and
Cutting effect.The buffer is preferably one of water, boric acid, sulfuric acid, acetic acid and phosphoric acid or a variety of；Especially phosphoric acid and sulphur
Corrosive liquid viscosity also can be improved in acid, is easy to bring silicon rod by cutting line.The additive amount of the buffer is not more than nitric acid and hydrogen fluorine
The 20% of sour gross mass 50%, preferably nitric acid and hydrofluoric acid gross mass.
The effect of the additives is to speed up or slows down reaction rate, as interfacial agent or improves surface roughness,
Improve the properties such as corrosive liquid viscosity, protection equipment axis, line etc. are not easy the effects of being corroded.The additives be preferably oxidant,
Reducing agent or metallic salt.The additive amount of the additives is not more than the 10% of nitric acid and hydrofluoric acid gross mass, preferably nitre
The 0.05~2% of acid and hydrofluoric acid gross mass.
The catalyst can induce reaction, accelerate reaction speed, it is therefore desirable to be optionally added into.The catalyst is preferably
Nitrite, such as ammonium nilrite, sodium nitrite.The additive amount of the catalyst is no more than nitric acid and hydrofluoric acid gross mass
10%, preferably the 1% of nitric acid and hydrofluoric acid gross mass.
The reaction that nitrite induces is as follows:
Anode reaction are as follows: Si+2e+→Si2+；H2O→(OH)-+H+；
Si(OH)2→SiO2+H2↑
Si2++2(OH)-→Si(OH)2；
It can be seen that hole is needed to participate in.This hole is by HNO3Generation is reduced in local micro cathode.
Cathode reaction are as follows: HNO2+HNO3→N2O4+H2O；N2O4→2NO2；
NO2→NO2 -+e+
NO2 -+H+→HNO2
Catalyst contains NO2-Induce and be catalyzed above-mentioned reaction.
The principle of multi-thread device cooperation mix acid liquor cutting is extremely complex and is different, and the minor change of stoicheiometry is all
It will cause the larger impact of cutting speed.Rate of cutting and cut quality are related with multiple influence factors, interact, common to make
With.
The factor of rate of cutting and cut quality is influenced in addition to above-mentioned mix acid liquor ingredient, ratio, concentration etc., temperature pair
Cutting speed also has direct influence, and as the temperature rises, corrosion rate is accelerated.For safety and surface quality and it is easy to
Temperature when control, the generally cutting process is 15~80 DEG C.
In addition, the movement rate of cutting line, also directly affects rate of cutting, cutting line can carry more new mixing
To cutting region, the line of movement simultaneously disturbs cutting region acid solution, and quickening, which reacts to obtain, to be carried out, and linear velocity is preferably 1~
200mm/min.Impurity content, the crystal defect (COP, twin, dislocation, stacking, vacancy, microdefect etc.), resistivity of silicon rod, ginseng
Miscellaneous element and content difference correspond to P-, P+, P++, N-, N+, N++, can all influence chemical reaction process, and then influence this cutting speed
Rate and cut quality.
In addition, the physical properties such as the viscosity of mix acid liquor, infiltration adhesive ability also directly affect processing efficiency, a certain range
Interior, viscosity is bigger, and wetting capacity is stronger, and processing efficiency is higher.Diameter, construction, surface hydrophilicity, the band sour ability, bullet of cutting line
Property coefficient, tensile strength, corrosion resistance, high temperature resistant property, wearing coefficient etc. equally affect rate of cutting and cut quality.
Preferably, the mix acid liquor is the mixture of nitric acid, hydrofluoric acid and acetic acid, the body of nitric acid, hydrofluoric acid and acetic acid
Product is than being (1~3): (5~7): (1~2)；
Nitric acid, hydrofluoric acid, acetic acid and sulfuric acid mixture, the volume ratio of nitric acid and hydrofluoric acid is (1~3): (5~7), institute
The gross mass for stating acetic acid and sulfuric acid accounts for the 20% of nitric acid and hydrofluoric acid gross mass；
The volume ratio of the mixture of nitric acid, hydrofluoric acid and hydrogen peroxide, nitric acid and hydrofluoric acid is (1~3): (5~7), described
The quality of hydrogen peroxide accounts for the 0.05~2% of nitric acid and hydrofluoric acid gross mass；Or
Nitric acid, hydrofluoric acid, phosphoric acid and bromine mixture, the nitric acid, hydrofluoric acid, phosphoric acid volume ratio be (1~3): (5
~7): (1~2), the quality of the bromine account for the 1% of nitric acid and hydrofluoric acid gross mass.
It is every to pass through a predetermined time during cutting process according to the present invention, then it is sprayed on silicon rod cut surface
Spill cleaning solution, the mix acid liquor on cleaning removal silicon rod cut surface.
By spraying cleaning solution on silicon rod cut surface, silicon chip surface can reduce because acid solution residual continues what corrosion generated
The problem of flatness difference by flatness control in reasonable range, while removing mix acid liquor to prevent excessive corrosion from damaging
It loses and increases the rate of output.The cleaning solution is preferably water.
Preferably, the predetermined time is 0.5~3 minute.Can be according to practical cutting process the case where, appropriate adjustment are predetermined
Time, the i.e. opportunity of control sprinkling cleaning solution.
The embodiment of the present invention also discloses a kind of Multi-wire cutting device, as shown in figure 3, including at least a pair of of parallel main axis
And more parallel cutting lines (6) being wound on the main shaft, the first spray assembly (8) and the second spray assembly (1),
(9)；
The side of the main shaft is set, for spraying the first spray assembly of mix acid liquor on the cutting line；
The side of silicon wafer cutting region is set, for the second spray assembly to the cut surface of silicon rod sprinkling cleaning solution.
The present invention is to act on mix acid liquor and silicon wafer specific region, and buffer, additives, catalyst is added etc., with
Enhance the viscosity and adhesive force of mix acid liquor, balances cutting efficiency and cut quality.Meanwhile by the sand of original multi-wire saw equipment
Slurry stirring, feeding mechanism and mortar circulation and stress device change into acid solution supply relevant apparatus, can also especially change cutting
Material, surface state and the reduction linear velocity of line, such as high molecular material, composite material, coating means are utilized, to reach cutting
Line is acidproof, the sour ability of band is strong, so that cut quality is good, speed is fast, line is used multiple times.
For a further understanding of the present invention, below with reference to embodiment to the multi-line cutting method of silicon rod provided by the invention and
Device is described in detail, and protection scope of the present invention is not limited by the following examples.
Embodiment 1
Step (1): adhering to mix acid liquor on the cutting line of Multi-wire cutting device, carries mixed acid using the cutting line
Liquid carries out cutting process to silicon rod；
The mix acid liquor includes nitric acid, hydrofluoric acid, acetic acid, and the volume ratio of nitric acid, hydrofluoric acid and acetic acid is 3:7:2.
The temperature of cutting process is 30 DEG C, linear velocity 50mm/min.
It is every to pass through 2 minutes during the cutting process, then it is sprayed on the cutting line for carry mix acid liquor
Water, cleaning remove the mix acid liquor on cut surface；
Step (2): after the spray water, if not formed silicon wafer, if return step (1), continues cutting process；If shape
At silicon wafer, then stop cutting process.
Embodiment 2
Step (1): adhering to mix acid liquor on the cutting line of Multi-wire cutting device, carries mixed acid using the cutting line
Liquid carries out cutting process to silicon rod；
The mix acid liquor includes nitric acid, hydrofluoric acid, acetic acid and sulfuric acid, the volume ratio of nitric acid, hydrofluoric acid, acetic acid and sulfuric acid
For 4:8:2:1.
The temperature of cutting process is 40 DEG C, linear velocity 100mm/min.
It is every to pass through 2.5 minutes during the cutting process, then it is sprayed on the cutting line for carry mix acid liquor
Water, cleaning remove the mix acid liquor on cut surface；
Step (2): after the spray water, if not formed silicon wafer, if return step (1), continues cutting process；If shape
At silicon wafer, then stop cutting process.
Embodiment 3
Step (1): adhering to mix acid liquor on the cutting line of Multi-wire cutting device, carries mixed acid using the cutting line
Liquid carries out cutting process to silicon rod；
The mix acid liquor includes nitric acid, hydrofluoric acid and hydrogen peroxide, nitric acid, hydrofluoric acid volume ratio be 5:7, the dioxygen
The quality of water accounts for the 1% of nitric acid and hydrofluoric acid gross mass.
The temperature of cutting process is 50 DEG C, linear velocity 100mm/min.
It is every to pass through 2 minutes during the cutting process, then it is sprayed on the cutting line for carry mix acid liquor
Water, cleaning remove the mix acid liquor on cut surface；
Step (2): after the spray water, if not formed silicon wafer, if return step (1), continues cutting process；If shape
At silicon wafer, then stop cutting process.
Embodiment 4
Step (1): adhering to mix acid liquor on the cutting line of Multi-wire cutting device, carries mixed acid using the cutting line
Liquid carries out cutting process to silicon rod；
The mix acid liquor includes nitric acid, hydrofluoric acid, potassium iodide and ammonium nilrite, and the volume ratio of nitric acid and hydrofluoric acid is 4:
9.The additive amount of the potassium iodide is the 1% of nitric acid and hydrofluoric acid gross mass, and the additive amount of the ammonium nilrite is nitric acid and hydrogen
The 1% of fluoric acid gross mass.
The temperature of cutting process is 50 DEG C, linear velocity 30mm/min.
It is every to pass through 1 minute during the cutting process, then it is sprayed on the cutting line for carry mix acid liquor
Water, cleaning remove the mix acid liquor on cut surface；
Step (2): after the spray water, if not formed silicon wafer, if return step (1), continues cutting process；If shape
At silicon wafer, then stop cutting process.
Embodiment 5
Step (1): adhering to mix acid liquor on the cutting line of Multi-wire cutting device, carries mixed acid using the cutting line
Liquid carries out cutting process to silicon rod；
The mix acid liquor includes nitric acid and hydrofluoric acid, and the volume ratio of nitric acid and hydrofluoric acid is 3:7.The temperature of cutting process
It is 50 DEG C, linear velocity 20mm/min.
It is every to pass through 1 minute during the cutting process, then it is sprayed on the cutting line for carry mix acid liquor
Water, cleaning remove the mix acid liquor on cut surface；
Step (2): after the spray water, if not formed silicon wafer, if return step (1), continues cutting process；If shape
At silicon wafer, then stop cutting process.
Multi-line cutting method of the present invention and existing mortar multi-line cutting method are compared, as a result referring to table 1.
Table 1
The above description of the embodiment is only used to help understand the method for the present invention and its core ideas.It should be pointed out that pair
For those skilled in the art, without departing from the principle of the present invention, the present invention can also be carried out
Some improvements and modifications, these improvements and modifications also fall within the scope of protection of the claims of the present invention.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (10)
1. a kind of multi-line cutting method of silicon rod, which comprises the following steps:
Step (1): adhering to mix acid liquor on the cutting line of Multi-wire cutting device, carries mix acid liquor pair using the cutting line
Silicon rod carries out cutting process；
It is every to pass through a predetermined time during cutting process, cleaning solution is sprayed on the cut surface of silicon rod, cleaning is gone
Except the mix acid liquor on silicon rod cut surface；
Step (2): after the sprinkling cleaning solution, if not formed silicon wafer, return step (1) continues cutting process；If shape
At silicon wafer, then stop cutting process.
2. multi-line cutting method according to claim 1, which is characterized in that the cutting line is for chemical fibre monofilament or again
Silk, silicon carbide coat the composite material line or treated wire that carbon fiber core is formed；
The chemical fibre is polytetrafluoroethylene fibre or ultra-high molecular weight polyethylene.
3. multi-line cutting method according to claim 1, which is characterized in that the mix acid liquor includes nitric acid and hydrogen fluorine
The volume ratio of acid, the nitric acid and hydrofluoric acid is (1~5): (5~9)；
The mass concentration of the nitric acid is 70%, and the mass concentration of the hydrofluoric acid is 50%.
4. multi-line cutting method according to claim 3, which is characterized in that the mix acid liquor further include: buffer, attached
Add one or more in agent and catalyst；
The buffer is one of water, boric acid, sulfuric acid, acetic acid and phosphoric acid or a variety of；
The additives are oxidant, reducing agent or metallic salt；
The catalyst is nitrite.
5. multi-line cutting method according to claim 4, which is characterized in that the additive amount of the buffer is not more than nitric acid
With the 50% of hydrofluoric acid gross mass, 10% of the additive amounts of the additives no more than nitric acid and hydrofluoric acid gross mass is described to urge
The additive amount of agent is not more than the 10% of nitric acid and hydrofluoric acid gross mass.
6. multi-line cutting method according to claim 5, which is characterized in that the mix acid liquor be nitric acid, hydrofluoric acid and
The mixture of acetic acid, the volume ratio of nitric acid, hydrofluoric acid and acetic acid are (1~3): (5~7): (1~2)；
Nitric acid, hydrofluoric acid, acetic acid and sulfuric acid mixture, the volume ratio of nitric acid and hydrofluoric acid is (1~3): (5~7), the vinegar
The gross mass of acid and sulfuric acid accounts for the 20% of nitric acid and hydrofluoric acid gross mass；
The volume ratio of the mixture of nitric acid, hydrofluoric acid and hydrogen peroxide, nitric acid and hydrofluoric acid is (1~3): (5~7), the dioxygen
The quality of water accounts for the 0.05~2% of nitric acid and hydrofluoric acid gross mass；Or
Nitric acid, hydrofluoric acid, phosphoric acid and bromine mixture, the nitric acid, hydrofluoric acid, phosphoric acid volume ratio be (1~3): (5~7):
(1~2), the quality of the bromine account for the 1% of nitric acid and hydrofluoric acid gross mass.
7. multi-line cutting method according to claim 1, which is characterized in that the temperature when cutting process is 15~80
℃。
8. multi-line cutting method according to claim 1, which is characterized in that the linear velocity when cutting process is 1~
200mm/min。
9. multi-line cutting method according to claim 1, which is characterized in that the predetermined time is 0.5~5 minute.
10. a kind of Multi-wire cutting device, including at least a pair of of parallel main axis, and be wound on the main shaft more are parallel
Cutting line, which is characterized in that further include:
The side of the main shaft is set, for spraying the first spray assembly of mix acid liquor on the cutting line；
The side of silicon wafer cutting region is set, for the second spray assembly to the cut surface of silicon rod sprinkling cleaning solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910589187.6A CN110281408A (en) | 2019-07-02 | 2019-07-02 | A kind of multi-line cutting method and device of silicon rod |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910589187.6A CN110281408A (en) | 2019-07-02 | 2019-07-02 | A kind of multi-line cutting method and device of silicon rod |
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| CN113451444A (en) * | 2021-06-30 | 2021-09-28 | 安徽华晟新能源科技有限公司 | Method for manufacturing solar cell |
| CN115157378A (en) * | 2022-05-26 | 2022-10-11 | 张家界康华实业股份有限公司 | Method for cutting reed leaves and reed leaves produced by same |
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