CN109755102B - Silicon wafer laser and alkali liquor combined texturing process - Google Patents
Silicon wafer laser and alkali liquor combined texturing process Download PDFInfo
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- CN109755102B CN109755102B CN201711059127.0A CN201711059127A CN109755102B CN 109755102 B CN109755102 B CN 109755102B CN 201711059127 A CN201711059127 A CN 201711059127A CN 109755102 B CN109755102 B CN 109755102B
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Abstract
The invention provides a silicon wafer laser and alkali liquor combined texturing process, which comprises the following steps: s1: performing laser texturing on the diffused silicon wafer; s2: and (3) texturing the silicon wafer subjected to laser texturing by using an alkaline solution. The invention has the beneficial effects that the phosphorus and borosilicate glass on the surface of the silicon wafer after diffusion treatment is removed by adopting the glass corrosive liquid which is prepared according to a certain proportion, the preparation is prepared for laser texturing, the laser texturing process is adopted, the preparation process is simple, convenient and quick, and the preparation process is not limited by the use environment; the laser texturing is adopted, so that the texturing step is simple, and the equipment investment cost is low; the silicon wafer after laser texturing is subjected to wet etching by using the alkaline solution, so that the roughness of the surface of the silicon wafer is further increased, the protective adhesive is not easy to fall off, and the adhesive force is large.
Description
Technical Field
The invention belongs to the technical field of silicon wafer production, and particularly relates to a silicon wafer laser and alkali liquor combined texturing process.
Background
With the development of semiconductor technology, the demand for passivation of semiconductor surface is higher and higher, and as a passivation material, the passivation material should have good electrical performance, reliability, good chemical stability, operability and economy. According to the requirements, the special glass for semiconductor passivation is taken as a more ideal semiconductor passivation material and starts to be applied in the semiconductor industry. A Chip manufactured by using Glass dedicated for semiconductor passivation is called a Glass passivation process Chip (GPP Chip).
At present, a method adopted by silicon wafer texturing used by GPP chips in the industry is dry sanding texturing, quartz sand is sprayed at a high speed to polish the surface of the silicon wafer, and the roughness of the surface of the silicon wafer is increased. However, the silicon wafer subjected to dry sanding texturing has the obvious defects that the silicon wafer subjected to dry sanding texturing is subjected to large stress, so that the silicon wafer is easy to break, the texturing effect is not obvious, the roughness is small, the process flow is complex, and the investment cost is high.
Disclosure of Invention
In view of the above problems, the invention provides a silicon wafer texturing process combining laser and alkali liquor, which is particularly suitable for being used when a GPP chip is subjected to texturing after diffusion, wherein uneven molten polycrystalline silicon is formed on the smooth surface of the silicon wafer through laser texturing, and the molten polycrystalline silicon on the surface of the silicon wafer is subjected to wet etching through alkaline solution texturing, so that the roughness of the surface of the silicon wafer is improved, and a larger adhesive force is provided for spraying of protective glue in a subsequent silicon wafer glass passivation process.
In order to solve the technical problems, the invention adopts the technical scheme that: a silicon wafer laser and alkali liquor combined texturing process is used for texturing a silicon wafer subjected to laser texturing by using an alkali solution.
Further, the silicon wafer alkaline solution texturing method comprises the following specific steps: and (3) putting the silicon wafer subjected to laser texturing into an alkaline solution for wet etching texturing.
Further, the alkaline solution is potassium hydroxide, an additive and pure water which are mixed according to a certain proportion.
Further, the mixing ratio of the potassium hydroxide, the additive and the pure water is 0.1-1:0.01-1: 1-10.
Further, before the silicon wafer subjected to laser texturing is subjected to alkaline solution texturing, the method also comprises the steps of removing a surface forming layer of the diffused silicon wafer and performing laser texturing on the diffused silicon wafer.
Further, the laser texturing of the silicon wafer comprises the following specific steps: and sequentially carrying out laser scanning on the two sides of the silicon wafer with the surface forming layer removed.
Further, after step S2, the silicon wafer is subjected to post-texturing cleaning.
The invention has the advantages and positive effects that: by adopting the technical scheme, the phosphorus and borosilicate glass on the surface of the silicon wafer after diffusion treatment is removed by adopting the glass corrosive liquid which is prepared according to a certain proportion, so that the preparation is prepared for laser texturing, and the laser texturing process is adopted, so that the preparation process is simple, convenient and quick, and is not limited by the use environment; toxic gas is not generated in the texturing process, so that adverse effects on the physical health of workers and the environment are avoided; the method can greatly improve the speed of the process and has good industrialization prospect; the laser texturing is adopted, so that the texturing step is simple, and the equipment investment cost is low; the silicon wafer after laser texturing is subjected to wet etching by using the alkaline solution, so that the roughness of the surface of the silicon wafer is further increased, the protective adhesive is not easy to fall off, and the adhesive force is large.
Drawings
FIG. 1 is a process flow diagram of the present invention.
Detailed Description
The invention is further described with reference to the following figures and specific embodiments.
As shown in figure 1, the invention relates to a silicon wafer laser and alkali liquor combined texturing process, which specifically comprises the following steps:
s1: performing laser texturing on the diffused silicon wafer;
s2: and (3) texturing the silicon wafer subjected to laser texturing by using an alkaline solution.
Namely, laser texturing and alkaline solution texturing are sequentially carried out on the diffused silicon wafer, a smooth polycrystalline silicon surface is formed on the surface of the silicon wafer through the laser texturing, the alkaline solution texturing is to corrode the smooth polycrystalline silicon surface of the silicon wafer subjected to the laser texturing into a rugged textured surface, and a large adhesive force is provided for spraying of protective glue in a subsequent silicon wafer glass passivation process.
The silicon wafer laser and alkali liquor combined texturing process specifically comprises the following steps:
the method comprises the following steps: removing the forming layer on the surface of the diffused silicon wafer: the method comprises the following steps of forming a layer of forming layer on the surface of a diffused silicon wafer, wherein the forming layer is made of phosphorus and borosilicate glass, removing the phosphorus and borosilicate glass on the surface of the diffused silicon wafer by using glass corrosive liquid, corroding the phosphorus and borosilicate glass formed after the liquid diffusion source of the silicon wafer is diffused by using the glass corrosive liquid, and preparing for next laser texturing, and specifically comprises the following steps:
s10: soaking the diffused silicon wafer in a glass corrosion solution for 0.5-4h, wherein the glass corrosion solution reacts and corrodes phosphorus and borosilicate glass on the surface of the silicon wafer to remove the phosphorus and borosilicate glass on the surface of the diffused silicon wafer, the glass corrosion solution is prepared by mixing ammonium hydrofluoric acid, oxalic acid, ammonium sulfate, glycerol, barium sulfate and hot pure water according to a certain proportion, and the mixing proportion is 20-30% by weight: 10-20%: 10-20%: 0-10%: 20-30%: mixing at a ratio of 10-20%.
S11: ultrasonic cleaning is carried out on the silicon wafer soaked with the glass corrosive liquid, the glass corrosive liquid on the surface of the silicon wafer is removed, meanwhile, phosphorus and borosilicate glass on the surface of the silicon wafer, which are incompletely reacted with the glass corrosive liquid, are removed by ultrasonic waves, wherein the ultrasonic cleaning is carried out on the silicon wafer soaked with the corrosive liquid for one time, and the ultrasonic cleaning time is generally 5-30 min;
s12: washing the silicon wafer subjected to ultrasonic cleaning with water, further washing the glass corrosive liquid possibly remained on the surface of the silicon wafer, wherein only one-time overflow washing is carried out, namely, the silicon wafer subjected to ultrasonic cleaning is placed in a water tank for one-time flushing, and is taken out after the flushing, and the one-time overflow washing time is generally 5-30 min;
s13: cleaning the silicon wafer after the overflow cleaning in the previous step with nitric acid to further remove residual impurities on the surface of the silicon wafer, namely, cleaning the silicon wafer in nitric acid, wherein the time for cleaning with nitric acid is generally 5-30 min;
s14: washing the silicon wafer cleaned by nitric acid with water, diluting and washing the nitric acid on the surface of the silicon wafer in the previous step to remove the nitric acid, and performing four-time overflow washing on the silicon wafer cleaned by nitric acid, namely sequentially putting the silicon wafer cleaned by nitric acid into four water tanks for flushing, wherein the four-stage overflow washing time is generally 5-30 min;
s15: and (5) drying the silicon wafer after the overflow cleaning by using a drying machine.
Step two: carrying out laser texturing on the two sides of the silicon wafer with the surface forming layer removed in sequence: the laser texturing is to respectively perform laser texturing on two sides of a silicon wafer, wherein the cleaned silicon wafer is scanned on the surface of the silicon wafer in a whole manner by using laser, and the method comprises the following specific steps: the cleaned silicon wafer is placed on a working platform of a laser, the laser is applied to scan the surface of the silicon wafer, when the laser scans, the laser beam of the laser linearly scans from left to right, and the laser beam is sequentially linearly and linearly scanned on the surface of the silicon wafer from top to bottom, and the whole surface of the silicon wafer is completely scanned once, namely, when the laser beam of the laser is scanned on the surface of the silicon wafer, controlling the diameter of a light spot formed by a laser beam to be 10-80 mu m, firstly carrying out linear scanning on the surface of the silicon wafer in the transverse direction, after one transverse scanning is finished, the laser beam moves downwards, and transverse linear scanning is continuously carried out next to the transverse direction which is finished by scanning, namely, the laser beam sequentially carries out a plurality of times of transverse scanning in the longitudinal direction, and a scanning track is formed on the surface of the silicon wafer; after one surface of the silicon wafer is scanned, the silicon wafer is turned over, and the other surface of the silicon wafer is scanned and subjected to texturing, namely, the two surfaces of the silicon wafer are both subjected to laser scanning, and the two surfaces of the silicon wafer are subjected to texturing.
The principle of laser texturing is as follows: the laser beam irradiates on the silicon wafer, the surface of the silicon wafer is in a molten state due to the high-temperature action of the facula of the laser beam and the high-temperature action of the laser beam, and after the silicon wafer is scanned, the silicon wafer is cooled to form molten polysilicon crystals on the surface of the silicon wafer.
The silicon chip is when through laser scanning, the laser beam of laser instrument assembles on the laser surface, because the high temperature effect of laser, make the phenomenon of silicon chip surface emergence melting, the back is scanned to the light beam of laser instrument, silicon chip surface melting state forms melting polycrystalline silicon through the cooling, make the silicon chip through the scanning back, make unevenness's melting polycrystalline silicon on the silicon chip surface, and the shape of this unevenness's melting polycrystalline silicon is continuous smooth curve form, make the roughness on silicon chip surface increase, make smooth silicon chip surface coarse surface, coating that the protection glued in the process of the follow-up glass of silicon chip provides the coating basis, make the protection glue adhesive force increase when the coating, be difficult for droing.
The silicon wafer is scanned by laser, the surface of the silicon wafer forms a molten state due to the action of high temperature, so that the removal amount of the silicon wafer reaches 4-5 mu m, and the monocrystalline silicon on the surface of the whole silicon wafer is made into rugged molten polycrystalline silicon by laser. Meanwhile, laser scanning can remove phosphorus and borosilicate glass on the surface of the silicon wafer, which are not removed by the glass etching solution.
During laser scanning, the used laser is an infrared laser or other lasers, and can be selected according to production requirements, the laser frequency of the laser is 0.1MHz-1MHz, the power is 10-50W, the scanning speed of the laser is 3-40m/s, the smooth surface of the silicon wafer is made into a rough surface, and the roughness of the surface of the silicon wafer is improved from 0.3m to 0.5-1.5 mu m; and when the silicon wafer is subjected to laser scanning, the silicon wafer is placed on a working platform of a laser, the silicon wafer is fixed and placed, the silicon wafer is placed in the air at normal temperature and normal pressure, the laser is applied to scan the surface of the silicon wafer, namely, the silicon wafer is not limited by the environment by applying the laser scanning, so that the silicon wafer texturing process is simplified, the equipment investment is reduced, and the silicon wafer texturing process is simple, convenient to operate and simple in texturing.
Step three: the silicon wafer after the laser texturing is subjected to alkaline solution texturing, so that the roughness of the surface of the silicon wafer is further increased, and a larger adhesive force is provided for coating of protective glue in the subsequent glass passivation process of the silicon wafer. The alkaline solution texturing method comprises the following specific steps: and (3) placing the silicon wafer subjected to laser texturing in an alkaline solution for wet etching texturing, and etching the smooth polycrystalline silicon surface of the silicon wafer subjected to laser texturing into an uneven textured surface to increase the roughness of the surface of the silicon wafer. The alkaline solution is potassium hydroxide, an additive and pure water are mixed according to a certain proportion, the mixing proportion is that the mixture is mixed according to the weight proportion of 0.1-1:001-1:1-10 to prepare the alkaline solution, the silicon wafer after laser texturing is placed in the alkaline solution to be subjected to wet etching, so that polycrystalline silicon on the surface of the silicon wafer reacts with the alkaline solution, the etching is further carried out, the roughness of the surface of the silicon wafer is further increased, a large adhesive force is provided for coating protective glue in a subsequent glass passivation process, and the roughness of the surface of the silicon wafer after the alkaline solution texturing reaches 0.5-1.5 mu m.
Step four: cleaning the silicon wafer after texturing by using the silicon wafer alkaline solution, and cleaning the alkaline solution on the surface of the silicon wafer and impurities generated during wet etching, wherein the method comprises the following specific steps: the silicon wafer surface cleaning method comprises the steps of soaking and cleaning with an acid solution, performing two-stage overflow cleaning after the acid solution cleaning, and spin-drying, wherein the acid solution is a hydrofluoric acid solution, and the cleaning aims at cleaning impurities generated on the surface of a silicon wafer subjected to texturing with an alkaline solution and cleaning the alkaline solution on the surface of the silicon wafer.
After the laser texturing and alkaline solution texturing processes, a layer of rugged polycrystalline silicon is respectively attached to two surfaces of the silicon wafer, so that the monocrystalline silicon wafer with the polycrystalline silicon attached to the surfaces is formed, and the roughness of the two surfaces of the silicon wafer is large.
After the steps, phosphorus and borosilicate glass on the surface of the silicon wafer after diffusion treatment are removed by using a glass corrosive liquid prepared according to a certain proportion, the surface of the silicon wafer is subjected to texturing by using a laser texturing and alkaline solution texturing method, and the surface of the silicon wafer is subjected to roughness test after texturing is finished, so that the surface roughness of the silicon wafer before texturing is 0.3m, the surface roughness of the silicon wafer after texturing is 0.3-1.5 mu m, and the fact that the texturing effect is obvious can be known, and the silicon wafer surface roughness is uniform, so that preparation is prepared for coating a protective adhesive of a subsequent silicon wafer glass passivation process.
The invention has the advantages and positive effects that: by adopting the technical scheme, the phosphorus and borosilicate glass on the surface of the silicon wafer after diffusion treatment is removed by adopting the glass corrosive liquid which is prepared according to a certain proportion, so that the preparation is prepared for laser texturing, and the laser texturing process is adopted, so that the preparation process is simple, convenient and quick, and is not limited by the use environment; toxic gas is not generated in the texturing process, so that adverse effects on the physical health of workers and the environment are avoided; the method can greatly improve the speed of the process and has good industrialization prospect; the laser texturing is adopted, so that the texturing step is simple, and the equipment investment cost is low; the silicon wafer after laser texturing is subjected to wet etching by using the alkaline solution, so that the roughness of the surface of the silicon wafer is further increased, the protective adhesive is not easy to fall off, and the adhesive force is large.
While one embodiment of the present invention has been described in detail, the description is only a preferred embodiment of the present invention and should not be taken as limiting the scope of the invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.
Claims (4)
1. A silicon wafer laser and alkali liquor combined texturing process is characterized by comprising the following steps: carrying out alkaline solution texturing on the silicon wafer subjected to laser texturing, and putting the silicon wafer subjected to laser texturing into an alkaline solution for wet etching texturing, wherein the temperature of the alkaline solution is normal temperature;
the method also comprises the following steps of removing the diffused surface forming layer of the silicon wafer before laser texturing: the method comprises the following steps:
s10: soaking the diffused silicon wafer in a glass corrosive liquid for 0.5-4h to remove phosphorus and borosilicate glass on the surface of the diffused silicon wafer, wherein the glass corrosive liquid is prepared by mixing ammonium hydrofluoride, oxalic acid, ammonium sulfate, glycerol, barium sulfate and hot pure water according to a certain proportion, and the mixing proportion is 20-30% by weight: 10-20%: 10-20%: 0-10%: 20-30%: mixing at a ratio of 10-20%;
s11: carrying out ultrasonic cleaning on the silicon wafer soaked with the glass corrosion liquid to remove the glass corrosion liquid on the surface of the silicon wafer, wherein the ultrasonic cleaning time is generally 5-30 min;
s12: carrying out water cleaning on the silicon wafer subjected to ultrasonic cleaning, wherein the water cleaning is primary overflow cleaning, and the primary overflow cleaning time is 5-30 min;
s13: cleaning the silicon wafer subjected to overflow cleaning in the step S12 with nitric acid for 5-30 min;
s14: carrying out four times of overflow cleaning on the silicon wafer cleaned by the nitric acid, wherein the four-stage overflow cleaning time is 5-30 min;
s15: spin-drying the silicon wafer after the overflow cleaning by using a spin dryer;
the laser texturing method for the silicon wafer comprises the following specific steps: the method comprises the steps of sequentially carrying out laser scanning on two sides of a silicon wafer with a surface forming layer removed, placing the silicon wafer in air at normal temperature and normal pressure when carrying out laser scanning on the silicon wafer, placing the cleaned silicon wafer on a working platform of a laser, and scanning the surface of the silicon wafer by using the laser.
2. The silicon wafer laser and alkali liquor combined texturing process according to claim 1, characterized in that: the alkaline solution is potassium hydroxide, an additive and pure water which are mixed according to a certain proportion.
3. The silicon wafer laser and alkali liquor combined texturing process according to claim 2, characterized in that: the mixing ratio of the potassium hydroxide, the additive and the pure water is 0.1-1:0.01-1: 1-10.
4. The silicon wafer laser and alkali liquor combined texturing process according to claim 1, characterized in that: and after the silicon wafer is subjected to texturing by the silicon wafer alkaline solution, cleaning the silicon wafer after the texturing.
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| CN113523576A (en) * | 2021-07-15 | 2021-10-22 | 浙江爱旭太阳能科技有限公司 | Suede manufacturing method, laminated battery manufacturing method and laminated battery |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110041201A (en) * | 2009-10-15 | 2011-04-21 | 주식회사 효성 | Texturing method using laser, method for manufacturing solar cell using the texturing and solar cell manufactured the same |
| CN102115915A (en) * | 2010-12-31 | 2011-07-06 | 百力达太阳能股份有限公司 | Single crystal silicon texture-making additive and single crystal silicon texture-making technology |
| CN102709163A (en) * | 2012-05-24 | 2012-10-03 | 中山大学 | Wool preparing process by crystalline silicon based on laser interference induced reaction |
| CN102891210A (en) * | 2011-07-18 | 2013-01-23 | 刘莹 | Making method of single-side electrode crystalline silicon solar cell |
| JP2015088712A (en) * | 2013-11-01 | 2015-05-07 | 日本酢ビ・ポバール株式会社 | Texture etchant, liquid additive agent for texture etchant, texture-formed substrate, method for manufacturing texture-formed substrate, and solar battery |
| KR101561455B1 (en) * | 2013-01-30 | 2015-10-20 | 주식회사 이앤알솔라 | Producing method of solar cell |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101604711A (en) * | 2009-06-08 | 2009-12-16 | 无锡尚德太阳能电力有限公司 | A kind of preparation method of solar cell and the solar cell for preparing by this method |
| KR101414570B1 (en) * | 2012-07-25 | 2014-07-03 | 한국에너지기술연구원 | Silicon solar cell having selective emitter structure and manufacturing method thereof |
-
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- 2017-11-01 CN CN201711059127.0A patent/CN109755102B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110041201A (en) * | 2009-10-15 | 2011-04-21 | 주식회사 효성 | Texturing method using laser, method for manufacturing solar cell using the texturing and solar cell manufactured the same |
| CN102115915A (en) * | 2010-12-31 | 2011-07-06 | 百力达太阳能股份有限公司 | Single crystal silicon texture-making additive and single crystal silicon texture-making technology |
| CN102891210A (en) * | 2011-07-18 | 2013-01-23 | 刘莹 | Making method of single-side electrode crystalline silicon solar cell |
| CN102709163A (en) * | 2012-05-24 | 2012-10-03 | 中山大学 | Wool preparing process by crystalline silicon based on laser interference induced reaction |
| KR101561455B1 (en) * | 2013-01-30 | 2015-10-20 | 주식회사 이앤알솔라 | Producing method of solar cell |
| JP2015088712A (en) * | 2013-11-01 | 2015-05-07 | 日本酢ビ・ポバール株式会社 | Texture etchant, liquid additive agent for texture etchant, texture-formed substrate, method for manufacturing texture-formed substrate, and solar battery |
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