CN103014876A - Processing method for single-cut corrosion slices of monocrystalline silicon wafer - Google Patents
Processing method for single-cut corrosion slices of monocrystalline silicon wafer Download PDFInfo
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- CN103014876A CN103014876A CN2012105082583A CN201210508258A CN103014876A CN 103014876 A CN103014876 A CN 103014876A CN 2012105082583 A CN2012105082583 A CN 2012105082583A CN 201210508258 A CN201210508258 A CN 201210508258A CN 103014876 A CN103014876 A CN 103014876A
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Abstract
The invention relates to a processing method for single-cut corrosion slices of a monocrystalline silicon wafer. The processing method comprises the following steps: 1, controlling the double-sided removal rate of the silicon wafer to be 20 plus (minus) 2 microns; 2, preparing acid corrosion resistant liquid consisting of the following components in percentage by weight: 9.03-12.41% of hydrofluoric acid, 39.9-42.0% of nitric acid, 19.2-23.1% of acetic acid, which are mixed by adding deionized water; 3, adding ammonia water to the acid corrosion resistant liquid as the additive, wherein the adding amount of the ammonia water is 1.08-2.48% of the total amount of the acid corrosion resistant liquid; 4, controlling the surface gloss of the corroded silicon wafer to 2-4Gs; 5, blowing nitrogen gas at the nitrogen gas position of 50-150 mm in an acid corrosion process, wherein the flow rate of the nitrogen gas is 100-300L/min, the pressure of the nitrogen gas is 80-300Pa, and the nitrogen gas blowing lasts in the whole process; 6, enabling the circulation volume of the acid corrosion resistant liquid to 300L, and enabling the discharge volume of the acid corrosion resistant liquid to 1-2L and the compensation amount of the acid corrosion resistant liquid to 0.3-1L after corroding 50 slices every time. The processing method is adopted to replace slice grinding and corroding to prepare the single-cut corrosion slices of the monocrystalline silicon wafer, so that the processing processes from the chamfering to the grinding are saved, the yield is increased, and the cost is greatly reduced. Therefore, the processing method achieves the purpose of replacing slice grinding and corroding to prepare the single-cut corrosion slices of monocrystalline silicon wafer.
Description
Technical field
The present invention relates to single crystal wafers Surface machining of silicon wafer technique, particularly a kind of monocrystalline silicon wafer crystal list working method of cutting etched sheet.
Background technology
Main work flow as the base material of semiconductor device manufacturers-monocrystalline silicon wafer crystal polished section comprises: single crystal growing → barreling → section → chamfering → grinding → corrosion → injury of back → back of the body envelope → trimming → polishing → cleaning → packing etc.Polished section has preferably surface finish, less roughness and high reflectivity, but polished section has relatively high expectations to processing units, processing environment and cleaning way, chemical adjuvant purity etc., so cost also can be higher.In recent years, along with high speed development and the fierce market competition of semicon industry, in order to reduce the semiconductor source material cost, increasing semiconductor manufacturing factory merchant gradually adopts such as the substrate of using silicon single crystal etched sheet substituted single crystal silicon polished section as power device.
Although the silicon single crystal etched sheet has saved the work flow of injury of back to polishing, still more complicated in whole wafer process flow process, wherein the loss of silicon material is still larger, and wherein attrition process need to be removed approximately 70um on the basis of section.If in the less demanding field of surface parameter, use the monocrystalline silicon wafer crystal etched sheet that corrodes after the section to substitute conventional etched sheet even polished section, not only avoid mass excess, and can greatly save cost.
Yet, carry out corrosion processing if utilize in the prior art conventional acid corrosion of open report or caustic corrosion technique and correlation technique, the etched sheet surface that obtains is difficult to reach customer requirement, usually be presented as that geometric parameter such as TTV are larger, fragmentation rate is higher, there is stria etc. in the surface, therefore, is difficult to make product to carry out large batch of stable processing.
Summary of the invention
The objective of the invention is in order to overcome the deficiency of prior art processes existence, provide especially a kind of monocrystalline silicon wafer crystal list to cut the working method of etched sheet, by adopting ammoniacal liquor as corrosive fluid additive, the control two-sided removal amount of silicon chip and every corrosion parameter, realize stable processing in batches, both reduce the product tooling cost, also satisfied service requirements simultaneously.
The technical scheme that the present invention takes is: a kind of monocrystalline silicon wafer crystal list is cut the working method of etched sheet, it is characterized in that, takes following technique:
(1). the two-sided removal amount of silicon chip is controlled at: 20 ± 2 μ m;
(2). acid corrosion liquid is prepared according to the percentage of following component: hydrofluoric acid: 9.03 ~ 12.41%, nitric acid: 39.9 ~ 42.0%, acetic acid: 19.2 ~ 23.1%, all the other components are deionized water;
(3). add ammoniacal liquor as additive in acid corrosion liquid, ammoniacal liquor is 1.08 ~ 2.48% of acid corrosion liquid total amount;
(4). the silicon chip surface glossiness after corrosion is controlled at 2～4Gs;
(5). in the acid corrosion process, being chosen in the nitrogen position is that 50～150mm advertises nitrogen in the acid corrosion liquid bath, and nitrogen flow is 100～300L/min, and nitrogen pressure is 80～300Pa, and the nitrogen time is omnidistance;
(6). acid corrosion liquid internal circulating load is 300L, and after 50 of every corrosion, acid corrosion liquid output is 1～2L, and the acid corrosion liquid amount of filling into is 0.3～1L.
Advantage of the present invention and effect are: react and control removal amount by the ammoniacal liquor that adds and nitric acid, so that silicon chip is difficult for manifesting under luminescent lamp because of the macroscopic irregularitys such as section stria that cause without abrasive disc; Resultant behind ammoniacal liquor and the nitric acid reaction is decomposed to form bubble, has played stirring action, makes the reaction of silicon chip and corrosive fluid more even, effectively the control surface geometric parameter; Ammoniacal liquor has also reduced HF:HNO
3Local proportioning, cooperate the purging of certain nitrogen position, remove the fillet surface loss layer fully, repair fillet surface and reduce fragmentation rate; Mend acid by a certain amount of row and realize in batches stably manufactured.Thereby reach to prepare monocrystalline silicon wafer crystal section etched sheet and substitute the purpose of grinding etched sheet.Prepare the alternative etched sheet that grinds of monocrystalline silicon wafer crystal section etched sheet by the method and not only save chamfering to work flows such as grindings, and can increase piece rate, reduced significantly cost.
Description of drawings
Fig. 1 takes different positions to be blown into the fragmentation rate correlation curve figure that nitrogen produces.
Among the figure :-◆-expression fragmentation rate.
Embodiment
The invention will be further described below in conjunction with example: the present invention takes following technique:
(1). the two-sided removal amount of silicon chip is controlled at: 20 ± 2 μ m.
(2). acid corrosion liquid is prepared according to the percentage of following component: hydrofluoric acid: 9.03 ~ 12.41%, nitric acid: 39.9 ~ 42.0%, acetic acid: 19.2 ~ 23.1%, all the other components are deionized water.
(3). add ammoniacal liquor as additive in acid corrosion liquid, ammoniacal liquor is 1.08 ~ 2.48% of acid corrosion liquid total amount; Resultant behind ammoniacal liquor and the nitric acid reaction, decompose under the strong acid effect:
NH
4OH+HNO
3=NH
4NO
3+H2O-------------（1）
NH
4NO
3=N
2O↑+2H2O----------------------（2）
The N that decomposites
2O forms bubble in corrosive fluid, played the effect of stirring, and makes the reaction of silicon chip and corrosive fluid more even, and common such method is the control surface geometric parameter effectively.
(4). the silicon chip surface glossiness after corrosion is controlled at 2～4Gs; Because added alkaline ammoniacal liquor in the corrosive fluid, removal amount is less in addition so that the silicon chip surface glossiness after corrosion is darker, this so that silicon chip be difficult for manifesting under luminescent lamp because of the macroscopic irregularitys such as section stria that cause without abrasive disc.
(5). in the acid corrosion process, be chosen in the nitrogen position and be 50～150mm nitrogen blowing in the acid corrosion liquid bath, nitrogen flow is 100～300L/min, and nitrogen pressure is 80～300Pa, and the nitrogen time is omnidistance.Owing in corrosive fluid, having added ammoniacal liquor and nitric acid generation chemical reaction, having reduced HF:HNO
3Local proportioning, the purging that cooperates certain nitrogen position, make the reaction of silicon chip and corrosive fluid present anisotropic in the part, so that fillet surface at first is completely removed because of the mechanical loss layer without chamfering, objectively reach the purpose of repairing the fillet surface damage, overcome the too high shortcoming of fragmentation rate that chamfering not causes.
(6). after 50 of every corrosion, acid corrosion liquid output is 1～2L, and the acid corrosion liquid amount of filling into is 0.3～1L, to keep the running balance of acid corrosion liquid concentration, thereby keep the relatively stable of nitration mixture concentration and ratio, effectively dwindle the scattered error of the acid corrosion sheet removal amount of different bouts productions.
Molten P＜111 of mixing, embodiment 1:5 inch district〉the crystal orientation silicon chip, resistivity 0.0034 ± 12% Ω. ㎝, thickness 203 μ m.Take following technique:
1) the two-sided removal amount of silicon chip is controlled at: 20 ± 2 μ m.
2) according to the product specification of silicon chip, acid corrosion liquid is prepared according to the percentage of following component: HF:HNO
3: CH
3COOH=9.03%:39.9%:23.1%, all the other components are deionized water.
3) add ammoniacal liquor as additive in acid corrosion liquid, ammoniacal liquor is 2% of acid corrosion liquid total amount.
4) the silicon chip surface glossiness after corrosion is controlled at 3Gs.
5) in the acid corrosion process, in being 50～150mm scope, the nitrogen position chooses respectively ten different positionss nitrogen blowing in the acid corrosion liquid bath, and Fig. 1 is seen in its result's contrast.
6) select suitable technique to corrode: the temperature of acid corrosion liquid remains on 35 ℃; Autorotation speed is 50rpm, and revolution speed is 10rpm; Acid corrosion liquid internal circulating load is 300L; Nitrogen flow is 300L/min; Nitrogen pressure is 300Pa, and the nitrogen time is omnidistance; Acid corrosion liquid output is 2L, and the acid corrosion liquid amount of filling into is 1L.
7) cylinder that will place silicon chip is put into the acid corrosion machine, begins corrosion.
8) after corrosion finishes, the measurement of testing, its processing fragmentation rate is as shown in Figure 1.
By embodiment 1 explanation, different nitrogen position is different to the fillet surface repair, causes fragmentation rate variant, the condition of low fragmentation rate be nitrogen position=117mm(as shown in Figure 1).
Molten P＜111 of mixing, embodiment 2:5 inch district〉the crystal orientation silicon chip, resistivity 0.0034 ± 12% Ω. ㎝, thickness 203 μ m.Processing step is as follows:
1) the two-sided removal amount of silicon chip is controlled at: 20 ± 2 μ m.
2) according to the product specification of silicon chip, acid corrosion liquid is prepared according to the percentage of following component: HF:HNO
3: CH
3COOH=9.03%:39.9%:23.1%, all the other components are deionized water.
3) add ammoniacal liquor as additive in acid corrosion liquid, ammoniacal liquor is 2% of acid corrosion liquid total amount.
4) the silicon chip surface glossiness after corrosion is controlled at 3Gs.
5) select suitable technique to corrode: the temperature of acid corrosion liquid remains on 35 ℃; Autorotation speed is 50rpm, and revolution speed is 10rpm; Acid corrosion liquid internal circulating load is 300L; The nitrogen position is 117mm; Nitrogen flow is 300L/min; Nitrogen pressure is 300Pa, and the nitrogen time is omnidistance; Acid corrosion liquid output is 2L, and the acid corrosion liquid amount of filling into is 1L.
6) cylinder that will place silicon chip is put into the acid corrosion machine, begins corrosion.
7) after corrosion finishes, the measurement of testing, then packing.
Technique effect detects: adopt the etched sheet of above-mentioned acid corrosion explained hereafter, check is examined entirely to 3058 through ADE7200 type geometric parameter sorter: value ± 10 μ m centered by the thickness scattered error, TTV＜10 μ m, TIR＜10 μ m, test without the inspecting standard of dirty, colored, stroke road, stria in the surface, defective products have 3 broken, 1 collapses the limit, 2 breach, 1 stria, draw the road for 8,4 film clips, 4 stain a stroke road, and all the other are qualified, bad without how much parameters, qualification rate reaches 99.25%.Adopt the slice number of the more traditional abrasive disc etched sheet of the slice number of above-mentioned explained hereafter to increase by 35.9%.
By embodiment 2 explanations, this technique can realize that monocrystalline silicon wafer crystal section etched sheet substitutes the volume production of grinding etched sheet.
Claims (1)
1. the working method that the monocrystalline silicon wafer crystal list is cut etched sheet is characterized in that, takes following technique:
(1). the two-sided removal amount of silicon chip is controlled at: 20 ± 2 μ m;
(2). acid corrosion liquid is prepared according to the percentage of following component: hydrofluoric acid: 9.03 ~ 12.41%, nitric acid: 39.9 ~ 42.0%, acetic acid: 19.2 ~ 23.1%, all the other components are deionized water;
(3). add ammoniacal liquor as additive in acid corrosion liquid, ammoniacal liquor is 1.08 ~ 2.48% of acid corrosion liquid total amount;
(4). the silicon chip surface glossiness after corrosion is controlled at 2～4Gs;
(5). in the acid corrosion process, being chosen in the nitrogen position is that 50～150mm advertises nitrogen in the acid corrosion liquid bath, and nitrogen flow is 100～300L/min, and nitrogen pressure is 80～300Pa, and the nitrogen time is omnidistance;
(6). acid corrosion liquid internal circulating load is 300L, and after 50 of every corrosion, acid corrosion liquid output is 1～2L, and the acid corrosion liquid amount of filling into is 0.3～1L.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103643303A (en) * | 2013-12-05 | 2014-03-19 | 天津中环领先材料技术有限公司 | Processing method of monocrystalline silicon acid corrosion piece |
| CN103681298A (en) * | 2013-12-05 | 2014-03-26 | 天津中环领先材料技术有限公司 | Machining method for high-yield monocrystalline silicon wafer for IGBT |
| CN108179012A (en) * | 2017-12-19 | 2018-06-19 | 中国电子科技集团公司第四十七研究所 | Low stress back side etchant solution and etching process after being thinned for silicon wafer |
| CN109560023A (en) * | 2018-10-26 | 2019-04-02 | 北京亦盛精密半导体有限公司 | A kind of nitration mixture and its cleaning method cleaning monocrystalline silicon piece |
| CN111128714A (en) * | 2019-12-31 | 2020-05-08 | 杭州中欣晶圆半导体股份有限公司 | Acid etching process for reducing heavily boron-doped color spots |
| CN111235578A (en) * | 2020-02-24 | 2020-06-05 | 江苏传艺科技股份有限公司 | Etching solution for GaN millimeter wave power amplifier chip production and preparation method thereof |
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| CN102433563A (en) * | 2011-12-16 | 2012-05-02 | 天津中环领先材料技术有限公司 | Acid corrosion technology for 8-inch single crystal silicon chip for insulated gate bipolar transistor (IGBT) |
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| CN101415866A (en) * | 2006-01-31 | 2009-04-22 | 胜高股份有限公司 | Method for manufacturing epitaxial wafer |
| CN101431120A (en) * | 2007-11-07 | 2009-05-13 | 展丰能源技术（上海）有限公司 | Aqueous alkali wet method corrosion technology for surface structure of solar cell |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103643303A (en) * | 2013-12-05 | 2014-03-19 | 天津中环领先材料技术有限公司 | Processing method of monocrystalline silicon acid corrosion piece |
| CN103681298A (en) * | 2013-12-05 | 2014-03-26 | 天津中环领先材料技术有限公司 | Machining method for high-yield monocrystalline silicon wafer for IGBT |
| CN103681298B (en) * | 2013-12-05 | 2017-07-18 | 天津中环领先材料技术有限公司 | A kind of IGBT is with high production capacity monocrystalline silicon wafer crystal slice processing method |
| CN108179012A (en) * | 2017-12-19 | 2018-06-19 | 中国电子科技集团公司第四十七研究所 | Low stress back side etchant solution and etching process after being thinned for silicon wafer |
| CN109560023A (en) * | 2018-10-26 | 2019-04-02 | 北京亦盛精密半导体有限公司 | A kind of nitration mixture and its cleaning method cleaning monocrystalline silicon piece |
| CN111128714A (en) * | 2019-12-31 | 2020-05-08 | 杭州中欣晶圆半导体股份有限公司 | Acid etching process for reducing heavily boron-doped color spots |
| CN111128714B (en) * | 2019-12-31 | 2022-06-03 | 杭州中欣晶圆半导体股份有限公司 | Acid etching process for reducing heavily boron-doped color spots |
| CN111235578A (en) * | 2020-02-24 | 2020-06-05 | 江苏传艺科技股份有限公司 | Etching solution for GaN millimeter wave power amplifier chip production and preparation method thereof |
| CN111235578B (en) * | 2020-02-24 | 2021-12-10 | 江苏传艺科技股份有限公司 | Etching solution for GaN millimeter wave power amplifier chip production and preparation method thereof |
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Application publication date: 20130403 |