CN103014878A - Processing method for low-gloss acid corrosion slice - Google Patents
Processing method for low-gloss acid corrosion slice Download PDFInfo
- Publication number
- CN103014878A CN103014878A CN2012105083336A CN201210508333A CN103014878A CN 103014878 A CN103014878 A CN 103014878A CN 2012105083336 A CN2012105083336 A CN 2012105083336A CN 201210508333 A CN201210508333 A CN 201210508333A CN 103014878 A CN103014878 A CN 103014878A
- Authority
- CN
- China
- Prior art keywords
- acid
- acid corrosion
- corrosion
- corrosion liquid
- slice
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Weting (AREA)
Abstract
The invention relates to a processing method for low-gloss acid corrosion slice. The processing method comprises the following process: 1, controlling the double-faced removal amount of the acid corrosion slice to 32 plus (minus) 2 microns, wherein the service life of the acid corrosion liquid is long enough to corrode 30000-50000 standard slices; 2, preparing the acid corrosion liquid: adding deionized water to mix 7.06-8.07% of hydrofluoric acid, 40.5-42.2% of nitric acid and 22.67-27.96% of acetic acid; 3, keeping the temperature of the acid corrosion liquid to 30 DEG C to 40 DEG C; 4, controlling the discharge amount and compensation amount of the acid corrosion liquid to be 0.75%-1.25% of the total amount of the acid corrosion liquid while corroding 50 slices every time; and 5, using a mechanical hand to shake for reducing the local corrosion temperature, and reducing the surface gloss of the acid corrosion slice by the processes such as a process of controlling the concentration and service life of the acid corrosion liquid, a process of reducing the local corrosion temperature and the like on the condition of ensuring the removal amount of the corroded acid corrosion slices, wherein the surface gloss of the obtained acid corrosion slice reaches 10-25GS and satisfies the requirements of the client to the low-gloss corrosion slice. The process is adopted, so that the appearance of the silicon wafer is not dazzling, the improvement of the product yield is facilitated, and the mass production of the low-gloss corrosion slices is realized.
Description
Technical field
The present invention relates to the monocrystalline silicon sheet surface complete processing, particularly a kind of working method of low-luster sour sheet.
Background technology
The surface working flow process of monocrystalline silicon piece mainly comprises single crystal growing → barreling → section → chamfering → grinding → corrosion → injury of back → back of the body envelope → trimming → polishing → cleaning → packing etc.In recent years, high speed development and fierce market competition along with semicon industry, in order to reduce the semiconductor source material cost, increasing semiconductor device manufacturers adopts through the etched sheet after the corrosion processing and substitutes wafer after the polishing, thereby has saved polishing process that processing units environment, cleaning way, chemical adjuvant purity etc. are had relatively high expectations etc.Wherein, some customer demand requires lower product to the silicon chip surface glossiness, mainly uses the low-luster effect of silicon chip surface, is convenient to brushing when gluing.The etched sheet outward appearance of low-luster seems not " dazzling " in addition, stains, water stain, liquid stain becomes not obvious, is conducive to the raising of yield.
At present, domestic polished section generally is divided into two kinds of caustic corrosion technique and acid corrosion techniques at corrosion process.Adopt the etched sheet glossiness of caustic corrosion usually up to 340Gs, be difficult to realize the low-luster corrosion; And the acid corrosion liquid that adopts conventional proportioning (HF, HNO3, CH3COOH) carries out the etched sheet glossiness of conventional acid etching process processing and usually reaches 50-70GS, is difficult to too realize the low-luster corrosion.
Summary of the invention
Purpose of the present invention is exactly for overcoming the deficiencies in the prior art, a kind of working method of low-luster sour sheet is provided, by concentration and the acid corrosion liquid life-span of the two-sided removal amount of control silicon chip, control acid corrosion liquid, reduce the surface gloss of sour sheet, realize stable processing in batches, both reach client's Application standard, reduced again the product tooling cost.
The glossiness of etched sheet is directly proportional with the two-sided removal amount of acid corrosion, so the less etched sheet glossiness of erosion removal amount is usually lower.If but removal amount is not enough, may causes the stress that the front road such as abrasive disc mechanical workout produces and the mechanical stress affected layer that is formed with certain depth can not be removed totally fully, thereby may cause rear road device to process the decline of yield.Therefore can not realize low-luster sour sheet by simple minimizing removal amount.
The present invention realizes by such technical scheme: a kind of working method of low-luster sour sheet is characterized in that: comprise following technique:
(1). the two-sided removal amount of sour sheet is controlled at 32 ± 2 μ m; The acid corrosion liquid life-span is 30000～50000 mark sheets;
(2). the preparation of acid corrosion liquid: the shared percentage of each chemical ingredients is: hydrofluoric acid: 7.06～8.07%, nitric acid: 40.5～42.2%, acetic acid: 22.67～27.96%, add deionized water and mix;
(3). in processing sour sheet process, the temperature of acid corrosion liquid remains in the 30-40 ℃ of scope;
(4). after 50 sour sheets of every corrosion, discharge a part of acid corrosion liquid, each output is 0.75%～1.25% of acid corrosion liquid total amount, then, replenishes the concentration running balance that equivalent amount acid corrosion liquid is kept acid corrosion liquid again;
(5). in corrosion process, adopt mechanical manipulator to shake, the heat that is gathered in sour sheet surface when making corrosion is in time discharged, with reduction local corrosion temperature, and then the glossiness of reduction sour sheet.
The invention has the beneficial effects as follows: under the prerequisite that guarantees corrosion sour sheet removal amount, concentration and acid corrosion liquid life-span by control acid corrosion liquid and reduce the surface gloss that the techniques such as local corrosion temperature reduce the sour sheet, the surface gloss of the sour sheet that obtains reaches 10-25GS, thereby satisfies the client to the demand of low-luster etched sheet.By adopting this technique, the silicon chip outward appearance seems not " dazzling ", is conducive to the raising of product yield, thereby has realized the volume production of low-luster sour sheet simultaneously.
Description of drawings
Fig. 1 is the change trend curve figure of glossiness with the acid corrosion liquid life-span.
Embodiment
The invention will be further described below in conjunction with embodiment:
Embodiment 1:5 inch is mixed N＜111〉the crystal orientation silicon chip, resistivity 60 ~ 90 Ω. ㎝, its processing step is as follows:
1) corrosion of silicon for the treatment of that utilizes rewinder to clean is poured in the cylinder from the sheet basket.
2) according to the product specification of silicon chip, acid corrosion liquid is prepared according to weight by following component: HF:7.52%; HNO
3: 41.2%; CH
3COOH:24.5% adds deionized water and mixes.
3) in processing sour sheet process, the temperature of acid corrosion liquid remains 34 ℃; Autorotation speed is 50rpm; Revolution speed is 10rpm; Acid corrosion liquid internal circulating load is 400L; The nitrogen position is 100mm; Nitrogen flow is 300L/min; Nitrogen pressure is 300Pa; The nitrogen time is omnidistance.
4) keeping the two-sided removal amount of silicon chip is total removal amount: 32 ± 2 μ m.
Corrode first a slice when 5) renewing acid, keep sample; Be respectively to extract a slice at 5000,10000,15000,20000,25000,30000,35000,40000,45000,50000 o'clock at the etched sheet number afterwards, totally 10 keep sample.Take a sample altogether 11.
6) add man-hour, it is 4L that the acid corrosion liquid measure is discharged in 50 of every corrosion, and mending the corrosion liquid measure is 4L.
7) measurement of testing.Adopt MN-60 type glossiness to detect the silicon chip surface glossiness, and check the silicon chip surface state of appearance.
The silicon chip glossiness variation tendency of the acid corrosion corrosion in different life-spans as shown in Figure 1.As can be seen from Figure 1 the glossiness of acid corrosion sheet descends with the life-span rising, and when the acid corrosion liquid life-span was 30000 mark sheet, glossiness was lower than 25Gs, meets the processing request of low-luster sour flake products.
Embodiment 2:5 inch is mixed N＜111〉the crystal orientation silicon chip, resistivity 60 ~ 90 Ω. ㎝, totally 2500 are carried out batch machining.Its processing step is as follows:
1) corrosion of silicon for the treatment of that utilizes rewinder to clean is poured in the cylinder from the sheet basket, more than 2500 silicon chips process 50 on each cylinder take cylinder as unit.
2) according to the product specification of silicon chip, acid corrosion liquid is prepared according to percentage by following component: HF:7.38%; HNO
3: 41.6%; CH
3COOH:25.32% adds deionized water and mixes.
3) in processing sour sheet process, it is 30 ℃ that the temperature of acid corrosion liquid remains on corrosion temperature; Autorotation speed is 50rpm, and revolution speed is 10rpm; Acid corrosion liquid internal circulating load is 400L; The nitrogen position is 100mm; Nitrogen flow is 300L/min; Nitrogen pressure is 300Pa; The nitrogen time is omnidistance.
4) keep the silicon chip removal amount: 32 μ m, the acid corrosion liquid life-span is 32000 mark sheets.
5) cylinder that will place silicon chip is put into the acid corrosion machine, begins corrosion.
6) add man-hour, it is 4L that the acid corrosion liquid measure is discharged in 50 of every corrosion, and mending the corrosion liquid measure is 4L.
7) measurement of testing.Adopt MN-60 type glossiness to detect the silicon chip surface glossiness, and check the silicon chip surface state of appearance.
Technique effect detects: process 2500, glossiness is at 12-16GS, and all in the 10-25GS scope, yield is 99.48%, is higher than conventional 98% sour yield mean level (ML).
Can verify from the technique effect of embodiment 2: the present invention can realize the volume production of low-luster acid corrosion sheet, and yield is higher than normal level.
Claims (1)
1. the working method of a low-luster sour sheet is characterized in that: comprise following technique:
(1). the two-sided removal amount of sour sheet is controlled at 32 ± 2 μ m; The acid corrosion liquid life-span is 30000～50000 mark sheets;
(2). the preparation of acid corrosion liquid: the shared percentage of each chemical ingredients is: hydrofluoric acid: 7.06～8.07%, nitric acid: 40.5～42.2%, acetic acid: 22.67～27.96%, add deionized water and mix;
(3). in processing sour sheet process, the temperature of acid corrosion liquid remains in the 30-40 ℃ of scope;
(4). after 50 sour sheets of every corrosion, discharge a part of acid corrosion liquid, each output is 0.75%～1.25% of acid corrosion liquid total amount, then, replenishes the running balance that equivalent amount acid corrosion liquid is kept acid corrosion liquid concentration again;
(5). in corrosion process, adopt mechanical manipulator to shake, the heat that is gathered in sour sheet surface when making corrosion is in time discharged, with reduction local corrosion temperature, and then the glossiness of reduction sour sheet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105083336A CN103014878A (en) | 2012-12-03 | 2012-12-03 | Processing method for low-gloss acid corrosion slice |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105083336A CN103014878A (en) | 2012-12-03 | 2012-12-03 | Processing method for low-gloss acid corrosion slice |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103014878A true CN103014878A (en) | 2013-04-03 |
Family
ID=47963976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012105083336A Pending CN103014878A (en) | 2012-12-03 | 2012-12-03 | Processing method for low-gloss acid corrosion slice |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103014878A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103643303A (en) * | 2013-12-05 | 2014-03-19 | 天津中环领先材料技术有限公司 | Processing method of monocrystalline silicon acid corrosion piece |
| CN103681298A (en) * | 2013-12-05 | 2014-03-26 | 天津中环领先材料技术有限公司 | Machining method for high-yield monocrystalline silicon wafer for IGBT |
| CN104746146A (en) * | 2013-12-25 | 2015-07-01 | 新奥光伏能源有限公司 | Monocrystalline silicon slice texturing method |
| CN109560023A (en) * | 2018-10-26 | 2019-04-02 | 北京亦盛精密半导体有限公司 | A kind of nitration mixture and its cleaning method cleaning monocrystalline silicon piece |
| CN111128714A (en) * | 2019-12-31 | 2020-05-08 | 杭州中欣晶圆半导体股份有限公司 | Acid etching process for reducing heavily boron-doped color spots |
| CN111180325A (en) * | 2019-12-31 | 2020-05-19 | 杭州中欣晶圆半导体股份有限公司 | Method for improving operating efficiency of etching machine |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102517584A (en) * | 2011-12-15 | 2012-06-27 | 天津中环领先材料技术有限公司 | Processing method for high reflectivity acid corrosion chip |
-
2012
- 2012-12-03 CN CN2012105083336A patent/CN103014878A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102517584A (en) * | 2011-12-15 | 2012-06-27 | 天津中环领先材料技术有限公司 | Processing method for high reflectivity acid corrosion chip |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103643303A (en) * | 2013-12-05 | 2014-03-19 | 天津中环领先材料技术有限公司 | Processing method of monocrystalline silicon acid corrosion piece |
| CN103681298A (en) * | 2013-12-05 | 2014-03-26 | 天津中环领先材料技术有限公司 | Machining method for high-yield monocrystalline silicon wafer for IGBT |
| CN103681298B (en) * | 2013-12-05 | 2017-07-18 | 天津中环领先材料技术有限公司 | A kind of IGBT is with high production capacity monocrystalline silicon wafer crystal slice processing method |
| CN104746146A (en) * | 2013-12-25 | 2015-07-01 | 新奥光伏能源有限公司 | Monocrystalline silicon slice texturing method |
| CN109560023A (en) * | 2018-10-26 | 2019-04-02 | 北京亦盛精密半导体有限公司 | A kind of nitration mixture and its cleaning method cleaning monocrystalline silicon piece |
| CN111128714A (en) * | 2019-12-31 | 2020-05-08 | 杭州中欣晶圆半导体股份有限公司 | Acid etching process for reducing heavily boron-doped color spots |
| CN111180325A (en) * | 2019-12-31 | 2020-05-19 | 杭州中欣晶圆半导体股份有限公司 | Method for improving operating efficiency of etching machine |
| CN111128714B (en) * | 2019-12-31 | 2022-06-03 | 杭州中欣晶圆半导体股份有限公司 | Acid etching process for reducing heavily boron-doped color spots |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103014878A (en) | Processing method for low-gloss acid corrosion slice | |
| CN101656193B (en) | Technique for processing silicon chip | |
| CN103014877A (en) | Processing method of monocrystalline silicon wafer etched sheet with different glossiness at two sides | |
| CN102093820B (en) | Silicon wafer chemical and mechanical polishing composition with high stability | |
| CN103072073B (en) | Polishing process capable of maintaining long service life of silicon wafer polished section minority carrier | |
| CN104559798B (en) | A kind of alumina base chemical mechanical polishing liquid | |
| CN101367189A (en) | Silicon slice glazed surface scuffing control method | |
| CN102019582B (en) | Polishing process of 8-inch polished wafers doped with silicon lightly | |
| CN105086837B (en) | A kind of sapphire Liquid diamond | |
| CN101656195A (en) | Method for manufacturing large-diameter silicon wafer | |
| CN101671528A (en) | Polishing liquid for polishing monocrystalline silicon piece chemical machine | |
| CN102628009A (en) | Cleaning liquid and cleaning method | |
| CN102021658A (en) | Heavily doped monocrystalline silicon wafer corrosion technique by alkali corrosion before acid corrosion | |
| CN103009234A (en) | Polishing process of heavily arsenic-doped monocrystalline silicon polished wafer with improvement of surface granularity | |
| CN109943237A (en) | A kind of polishing fluid | |
| CN107686776A (en) | Solar energy level silicon section cleaning agent and preparation method thereof | |
| CN103681298B (en) | A kind of IGBT is with high production capacity monocrystalline silicon wafer crystal slice processing method | |
| CN103014876A (en) | Processing method for single-cut corrosion slices of monocrystalline silicon wafer | |
| CN110072956A (en) | Polishing liquid and polishing method | |
| CN102433563A (en) | Acid corrosion technology for 8-inch single crystal silicon chip for insulated gate bipolar transistor (IGBT) | |
| CN107398780A (en) | A kind of twin polishing method of wafer | |
| CN102021659A (en) | Acid corrosion technology of 8-inch light-doped monocrystalline silicon wafers | |
| CN104280279A (en) | Preparation method of SA213-Super304H austenitic stainless steel metallographic specimen | |
| CN102965668B (en) | Polishing solution for processing stainless steel plate material 8K mirror surface | |
| CN102399496A (en) | Abrasive composition for rough polishing of wafers |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130403 |