CN103009234A - Polishing process of heavily arsenic-doped monocrystalline silicon polished wafer with improvement of surface granularity - Google Patents
Polishing process of heavily arsenic-doped monocrystalline silicon polished wafer with improvement of surface granularity Download PDFInfo
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Abstract
The invention relates to a polishing process of heavily arsenic-doped monocrystalline silicon polished wafer with improvement of surface granularity. According to the polishing process, a silicon wafer is attached onto a ceramic tray by a wax chip mounter and is then polished, to be specific, the polishing process comprises a rough polishing stage, an intermediate polishing stage and a fine polishing stage, and the rough polishing stage, the intermediate polishing stage and the fine polishing stages respectively comprise four steps. According to the polishing process, the first-pass yield of the obtained heavily arsenic-doped monocrystalline silicon polished wafer can stably reach more than 90 percent through controlling the parameters, such as polishing pressure, rotating speed, time and flow of each step, therefore the problem of particle exceeding in the traditional production is solved, the purpose of producing the heavily arsenic-doped monocrystalline silicon polished wafers in a large batch is achieved, the cost is reduced and the labor productivity is improved. Meanwhile, the polishing process has an important influence on the electrical properties and the finished-product rate of devices and integrated circuits and has a great significance and an actual value on meeting the higher and higher requirements of the devices and large-scale integrated circuits on substrate silicon wafers.
Description
Technical field
The present invention relates to the processing method of monocrystalline silicon wafer crystal polished silicon wafer, particularly a kind of glossing that improves the heavily As doped silicon crystal polishing wafer sheet of surface particles, the monocrystalline silicon wafer crystal polished silicon wafer is mainly used in power device and integrated circuit epitaxial wafer backing material.
Background technology
Along with the high speed development of integrated circuit processing technique, various new devices and integrated circuit continue to bring out, modern super large-scale integration mainly be adopt vertical pulling heavy doping monocrystalline silicon buffing sheet through outside delay the epitaxial wafer of preparation.Wherein select arsenic as the donor impurity of heavily doped monocrystalline silicon, major advantage has: the solubility of arsenic in silicon is large, easily obtains the more monocrystalline of low-resistivity; Have larger segregation coefficient, the distributing homogeneity in crystal is also better; Diffusion coefficient is little in silicon, can avoid or reduce impurity by the silicon substrate back-diffusion, the very narrow and higher epitaxial loayer of resistivity with assurance acquisition transition zone; Mismatch is less, can improve perfection of crystal and crystal forming rate etc.Therefore arsenic is as desirable dopant material, and its epitaxial wafer more and more is subject to the favor of device producer.
And as the backing material of extension, the surface quality of monocrystalline silicon buffing sheet is directly connected to surface quality and the yield of epitaxial wafer, and is therefore more and more higher to its requirement.Because its doping content of heavy doping silicon chip is higher, the distortion of lattice that contained interstitial impurity and doping cause is relatively many, cause surperficial dangling bonds, interfacial state corresponding also more, easily produce the contamination in surface chemistry or the physical absorption external world, therefore in the heavily doped polishing preparation process, be a technical bottleneck difficult problem that is perplexing manufacturer to the control of particle always.
Summary of the invention
The objective of the invention is to utilize the wax single side polishing machine is arranged, a kind of glossing that improves the heavily As doped silicon crystal polishing wafer sheet of surface particles is provided, and the heavily As doped silicon crystal polishing wafer sheet by this technique manufacturing can obtain the low and few great surface quality of granule number of roughness.
The technical scheme that the present invention takes for achieving the above object is: a kind of glossing that improves the heavily As doped silicon crystal polishing wafer sheet of surface particles, it is characterized in that, and this process using has the wax chip mounter that silicon chip is attached on the ceramic disk to polish; Polishing process is divided into three phases: rough polishing stage, middle polishing stage and finishing polish stage, rough polishing stage, middle polishing stage and finishing polish stage are undertaken by four steps respectively again, and the burnishing parameters that each step in each stage is set is as follows:
The rough polishing stage:
Step 1, setting polishing time: 10 ~ 20s; Pressure 40 ~ 60kpa; Deep bid rotating speed 25rpm; Center guide wheel rotating speed 50rpm; Use deionized water to polish; Flow is 2 ~ 4L/min; Cooling water temperature is set 18 ℃;
Step 2, setting polishing time: 8 ~ 12min; Pressure 100 ~ 200kpa; Deep bid rotating speed 35rpm; Center guide wheel rotating speed 70rpm; Use rough polishing solution to polish; Flow is 4 ~ 8L/min; Cooling water temperature is set 18 ℃;
Step 3, setting polishing time: 20 ~ 40s; Pressure 40 ~ 60kpa; Deep bid rotating speed 25rpm; Center guide wheel rotating speed 50rpm; Use deionized water to polish; Flow is 2 ~ 4L/min; Cooling water temperature is set 18 ℃;
Step 4, setting polishing time: 10 ~ 20s; Pressure 40 ~ 60kpa; Deep bid rotating speed 25rpm; Center guide wheel rotating speed 50rpm; Use deionized water to polish; Flow is 2 ~ 4L/min; Cooling water temperature is set 18 ℃;
The middle polishing stage:
Step 1, setting polishing time: 10 ~ 20s; Pressure 470 ~ 560kpa; Deep bid rotating speed 200rpm; Center guide wheel rotating speed 350rpm; Use deionized water to polish; Flow is 12 ~ 14L/min; Cooling water temperature is set 28 ℃;
Step 2, setting polishing time: 5 ~ 8min; Pressure 800 ~ 1200kpa; Deep bid rotating speed 300rpm; Center guide wheel rotating speed 470rpm; Polishing fluid polishes in the use; Flow is 24 ~ 28L/min; Cooling water temperature is set 28 ℃;
Step 3, setting polishing time: 20 ~ 40s; Pressure 470 ~ 560kpa; Deep bid rotating speed 200rpm; Center guide wheel rotating speed 350rpm; Use deionized water to polish; Flow is 12 ~ 14L/min; Cooling water temperature is set 28 ℃;
Step 4, setting polishing time: 10 ~ 20s; Pressure 470 ~ 560kpa; Deep bid rotating speed 200rpm; Center guide wheel rotating speed 350rpm; Use deionized water to polish; Flow is 12 ~ 14L/min; Cooling water temperature is set 28 ℃;
The finishing polish stage:
Step 1, setting polishing time: 10 ~ 20s; Pressure 8 ~ 12kpa; Deep bid rotating speed 13rpm; Center guide wheel rotating speed 27rpm; Use deionized water to polish; Flow is 0.8 ~ 1.4L/min; Cooling water temperature is set 6 ℃;
Step 2, setting polishing time: 3 ~ 5min; Pressure 22 ~ 47kpa; Deep bid rotating speed 18rpm; Center guide wheel rotating speed 32rpm; Use precise polishing solution to polish; Flow is 1 ~ 2L/min; Cooling water temperature is set 6 ℃;
Step 3, setting polishing time: 20 ~ 40s; Pressure 8 ~ 12kpa; Deep bid rotating speed 13rpm; Center guide wheel rotating speed 27rpm; Use deionized water to polish; Flow is 0.8 ~ 1.4L/min; Cooling water temperature is set 6 ℃;
Step 4, setting polishing time: 10 ~ 20s; Pressure 8 ~ 12kpa; Deep bid rotating speed 13rpm; Center guide wheel rotating speed 27rpm; Use deionized water to polish; Flow is 0.8 ~ 1.4L/min; Cooling water temperature is set 6 ℃.
Draw above-mentioned technique by a large amount of tests study analysis, adding persistent erection by the rotating speed that pressurizes, adds, intensification throws the physical action of polishing process and strengthens chemical action by adding flow, realizing that its polishing process physical chemistry balance reaches adds persistent erection polishing and repairs surface action, helps to improve surface roughness; Simultaneously by step-down, rotating speed falls, cooling weakens the physical action of middle throwing polishing process and reduces chemical action by subtracting flow, realize its polishing process physical chemistry balance, reach and weaken the effect of finishing polish reparation surface etch, make silicon chip after polishing, can form passivation layer, make rear road be easy to clean, help particle control.
Beneficial effect of the present invention is: this technique is by the isoparametric control of polish pressure, rotating speed, time and flow to each step, the heavily As doped silicon crystal polishing wafer sheet first-time qualification rate that obtains can be stablized and reaches more than 90%, thereby solved a difficult problem that exists particle to exceed standard in the past producing, large-scale production heavily As doped silicon crystal polishing wafer sheet is become a reality, reduce cost, improved labor productivity.Simultaneously electric property and the yield rate of device and integrated circuit are had important impact, more and more higher requirement is significant and practical value this technology to silicon substrate to satisfying device and large scale integrated circuit.
The specific embodiment
The invention will be further described below in conjunction with embodiment:
Experiment silicon chip: 6 inches rotten sheets of adulterating vertical pulling arsenic siliconization, resistivity: 0.002-0.003 Ω .cm, thickness: 625 μ m, quantity: 200.
Process equipment: the wax chip mounter is arranged, single side polishing machine, dewax cleaning machine.
Auxiliary material: wax, ceramic disk, rough polishing solution, middle polishing fluid, precise polishing solution, rough polishing cloth, middle polishing cloth, precision polishing cloth, dewax agent, ammoniacal liquor, hydrogen peroxide, hydrochloric acid, pure water etc.
Technological parameter: the temperature of polishing fluid is 25 ℃, and polishing machine deep bid temperature is at 45 ℃.The burnishing parameters that each step in rough polishing stage is set is as follows:
Step 1, pressure 50kpa; Deep bid rotating speed 25rpm; Center guide wheel rotating speed 50rpm; Polishing time 10s; Use deionized water to polish; Flow 2.3L/min; Cooling water temperature is set 18 ℃ (transient process of boosting).
Step 2, pressure 130kpa; Deep bid rotating speed 35rpm; Center guide wheel rotating speed 70rpm; Polishing time 10min; Use rough polishing solution to polish; Flow 4.5L/min; Cooling water temperature is set 18 ℃ (polishing process).
Step 3, pressure 50kpa; Deep bid rotating speed 25rpm; Center guide wheel rotating speed 50rpm; Polishing time 30s; Use deionized water to polish; Flow 2.3L/min; Cooling water temperature is set 18 ℃ (step-down transient process).
Step 4, pressure: 50kpa, deep bid rotating speed 25rpm; Center guide wheel rotating speed 50rpm; Polishing time 10s; Use deionized water to polish; Flow 2.3L/min; Cooling water temperature is set 18 ℃ (opening shower water flushing rubbing head).
The burnishing parameters that each step in middle polishing stage is set is as follows:
Step 1, pressure 510kpa; Deep bid rotating speed 200rpm; Center guide wheel rotating speed 350rpm; Polishing time 10s; Use deionized water to polish; Flow is 12.7L/min; Cooling water temperature is set 28 ℃ (transient process of boosting).
Step 2, pressure 1130kpa; Deep bid rotating speed 300rpm; Center guide wheel rotating speed 470rpm; Polishing time 7min; Polishing fluid polishes in the use; Flow is 24.7L/min; Cooling water temperature is set 28 ℃ (polishing process).
Step 3, pressure 500kpa; Deep bid rotating speed 200rpm; Center guide wheel rotating speed 350rpm; Polishing time 30s; Use deionized water to polish; Flow is 12.7L/min; Cooling water temperature is set 28 ℃ (step-down transient process).
Step 4, pressure 510kpa; Deep bid rotating speed 200rpm; Center guide wheel rotating speed 350rpm; Polishing time 10s; Use deionized water to polish; Flow is 12.7L/min; Cooling water temperature is set 28 ℃ (opening shower water flushing rubbing head).
The burnishing parameters that each step in finishing polish stage is set is as follows:
Step 1, pressure 11kpa; Deep bid rotating speed 13rpm; Center guide wheel rotating speed 27rpm; Polishing time 10s; Use deionized water to polish; Flow is 1.1L/min; Cooling water temperature is set 6 ℃ (transient process of boosting).
Step 2, pressure 45kpa; Deep bid rotating speed 18rpm; Center guide wheel rotating speed 32rpm; Polishing time 5min; Use precise polishing solution to polish; Flow is 1.0L/min; Cooling water temperature is set 6 ℃ (polishing process).
Step 3, pressure 11kpa; Deep bid rotating speed 13rpm; Center guide wheel rotating speed 27rpm; Polishing time 30s; Use deionized water to polish; Flow is 1.1L/min; Cooling water temperature is set 6 ℃ (step-down transient process).
Step 4, pressure 11kpa; Deep bid rotating speed 13rpm; Center guide wheel rotating speed 27rpm; Polishing time 10s; Use deionized water to polish; Flow is 1.1L/min; Cooling water temperature is set 6 ℃ (opening shower water flushing rubbing head).
Process: the rotten sheet of clean adulterating vertical pulling arsenic siliconization is packed in the chip mounter, and chip mounter be that the rotten sheet of heavily doped arsenic silication pastes waxes automatically, and the end of ceramic disk paster enters the throwing state for the treatment of.Single side polishing machine carries out uploading of ceramic disk, polishes.After the rotten sheet polishing of adulterating vertical pulling arsenic siliconization, need manually peel off heavily doped arsenic is silicon polished, silicon polishedly carry out dewax after lower from the ceramic disk shovel and clean.
Test to cleaning rear silicon chip: under major light the visual inspection surface have or not draw a road, to collapse limit etc. bad; Detect geometric parameter with ADE7200; With granule detecting instrument check surface cleanliness; Measure the silicon chip surface roughness with microscope.Through checking in 200 qualified 197, qualification rate is 98.5%, greater than 95% yield criterion of conventional.The present embodiment sees Table 1 by technical indicator and the required technical indicator that detects.
Table 1
As can be seen from Table 1: technical indicator, particularly roughness that the technical indicator of taking the adulterating vertical pulling arsenic silicon polished silicon wafer of this processes to reach has surpassed demand are controlled at lower level, are conducive to the control of particle.
The equipment of this process using is in the industry known equipment, according to the above description, can realize the solution of the present invention in conjunction with art technology.
Claims (1)
1. a glossing that improves the heavily As doped silicon crystal polishing wafer sheet of surface particles is characterized in that, this technique is used to be had the wax chip mounter that silicon chip is attached on the ceramic disk to polish; Polishing process is divided into three phases: rough polishing stage, middle polishing stage and finishing polish stage, rough polishing stage, middle polishing stage and finishing polish stage are undertaken by four steps respectively again, and the burnishing parameters that each step in each stage is set is as follows:
The rough polishing stage:
Step 1, setting polishing time: 10 ~ 20s; Pressure 40 ~ 60kpa; Deep bid rotating speed 25rpm; Center guide wheel rotating speed 50rpm; Use deionized water to polish; Flow is 2 ~ 4L/min; Cooling water temperature is set 18 ℃;
Step 2, setting polishing time: 8 ~ 12min; Pressure 100 ~ 200kpa; Deep bid rotating speed 35rpm; Center guide wheel rotating speed 70rpm; Use rough polishing solution to polish; Flow is 4 ~ 8L/min; Cooling water temperature is set 18 ℃;
Step 3, setting polishing time: 20 ~ 40s; Pressure 40 ~ 60kpa; Deep bid rotating speed 25rpm; Center guide wheel rotating speed 50rpm; Use deionized water to polish; Flow is 2 ~ 4L/min; Cooling water temperature is set 18 ℃;
Step 4, setting polishing time: 10 ~ 20s; Pressure 40 ~ 60kpa; Deep bid rotating speed 25rpm; Center guide wheel rotating speed 50rpm; Use deionized water to polish; Flow is 2 ~ 4L/min; Cooling water temperature is set 18 ℃;
The middle polishing stage:
Step 1, setting polishing time: 10 ~ 20s; Pressure 470 ~ 560kpa; Deep bid rotating speed 200rpm; Center guide wheel rotating speed 350rpm; Use deionized water to polish; Flow is 12 ~ 14L/min; Cooling water temperature is set 28 ℃;
Step 2, setting polishing time: 5 ~ 8min; Pressure 800 ~ 1200kpa; Deep bid rotating speed 300rpm; Center guide wheel rotating speed 470rpm; Polishing fluid polishes in the use; Flow is 24 ~ 28L/min; Cooling water temperature is set 28 ℃;
Step 3, setting polishing time: 20 ~ 40s; Pressure 470 ~ 560kpa; Deep bid rotating speed 200rpm; Center guide wheel rotating speed 350rpm; Use deionized water to polish; Flow is 12 ~ 14L/min; Cooling water temperature is set 28 ℃;
Step 4, setting polishing time: 10 ~ 20s; Pressure 470 ~ 560kpa; Deep bid rotating speed 200rpm; Center guide wheel rotating speed 350rpm; Use deionized water to polish; Flow is 12 ~ 14L/min; Cooling water temperature is set 28 ℃;
The finishing polish stage:
Step 1, setting polishing time: 10 ~ 20s; Pressure 8 ~ 12kpa; Deep bid rotating speed 13rpm; Center guide wheel rotating speed 27rpm; Use deionized water to polish; Flow is 0.8 ~ 1.4L/min; Cooling water temperature is set 6 ℃;
Step 2, setting polishing time: 3 ~ 5min; Pressure 22 ~ 47kpa; Deep bid rotating speed 18rpm; Center guide wheel rotating speed 32rpm; Use precise polishing solution to polish; Flow is 1 ~ 2L/min; Cooling water temperature is set 6 ℃;
Step 3, setting polishing time: 20 ~ 40s; Pressure 8 ~ 12kpa; Deep bid rotating speed 13rpm; Center guide wheel rotating speed 27rpm; Use deionized water to polish; Flow is 0.8 ~ 1.4L/min; Cooling water temperature is set 6 ℃;
Step 4, setting polishing time: 10 ~ 20s; Pressure 8 ~ 12kpa; Deep bid rotating speed 13rpm; Center guide wheel rotating speed 27rpm; Use deionized water to polish; Flow is 0.8 ~ 1.4L/min; Cooling water temperature is set 6 ℃.
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| CN103659468A (en) * | 2013-12-09 | 2014-03-26 | 天津中环领先材料技术有限公司 | Waxed polishing method for reducing chemical burns of single crystal silicon polished wafer |
| CN107052984A (en) * | 2017-06-14 | 2017-08-18 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Crystal round fringes site flatness optimization method in CMP process |
| CN107344304A (en) * | 2017-06-30 | 2017-11-14 | 天津中环领先材料技术有限公司 | A kind of silicon chip polishing method for extending rough polishing solution service life |
| CN107378747A (en) * | 2017-07-11 | 2017-11-24 | 天津华海清科机电科技有限公司 | CMP process for MEMS |
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| CN103659468B (en) * | 2013-12-09 | 2016-06-29 | 天津中环领先材料技术有限公司 | A kind of reduce monocrystalline silicon wafer crystal polished silicon wafer chemical burn have wax polishing method |
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| CN108242396A (en) * | 2016-12-23 | 2018-07-03 | 有研半导体材料有限公司 | A kind of processing method for reducing silicon polished surface roughness |
| CN107052984A (en) * | 2017-06-14 | 2017-08-18 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Crystal round fringes site flatness optimization method in CMP process |
| CN107344304A (en) * | 2017-06-30 | 2017-11-14 | 天津中环领先材料技术有限公司 | A kind of silicon chip polishing method for extending rough polishing solution service life |
| CN107378747A (en) * | 2017-07-11 | 2017-11-24 | 天津华海清科机电科技有限公司 | CMP process for MEMS |
| CN107378747B (en) * | 2017-07-11 | 2019-04-02 | 天津华海清科机电科技有限公司 | CMP process for MEMS device |
| CN107855922A (en) * | 2017-10-31 | 2018-03-30 | 天津中环领先材料技术有限公司 | A kind of technique for lifting 8 inches of silicon wafer geometric parameters |
| CN110281082A (en) * | 2019-05-28 | 2019-09-27 | 天津中环领先材料技术有限公司 | A kind of polishing process of 8 inch silicon wafer of high-flatness |
| CN112975578A (en) * | 2019-12-12 | 2021-06-18 | 有研半导体材料有限公司 | Polishing method for improving surface roughness of silicon polished wafer |
| CN112975578B (en) * | 2019-12-12 | 2022-06-24 | 有研半导体硅材料股份公司 | Polishing method for improving surface roughness of silicon polished wafer |
| CN111730418A (en) * | 2020-05-11 | 2020-10-02 | 中环领先半导体材料有限公司 | Single-side polishing process for large-diameter semiconductor silicon wafer |
| CN112701037A (en) * | 2020-12-29 | 2021-04-23 | 苏州焜原光电有限公司 | Polishing method of semiconductor material and polishing solution for polishing gallium antimonide substrate |
| CN115446726A (en) * | 2022-08-03 | 2022-12-09 | 天津中环领先材料技术有限公司 | Polishing method for improving flatness of silicon wafer |
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Application publication date: 20130403 |