CN102962756B - Monocrystal silicon wafer polishing process capable of obtaining high polishing rate - Google Patents
Monocrystal silicon wafer polishing process capable of obtaining high polishing rate Download PDFInfo
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- CN102962756B CN102962756B CN201210534575.2A CN201210534575A CN102962756B CN 102962756 B CN102962756 B CN 102962756B CN 201210534575 A CN201210534575 A CN 201210534575A CN 102962756 B CN102962756 B CN 102962756B
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- 238000005498 polishing Methods 0.000 title claims abstract description 115
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract description 19
- 229910052710 silicon Inorganic materials 0.000 title abstract description 19
- 239000010703 silicon Substances 0.000 title abstract description 18
- 238000007517 polishing process Methods 0.000 title abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000243 solution Substances 0.000 claims description 18
- 239000013078 crystal Substances 0.000 claims description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 11
- 239000012895 dilution Substances 0.000 claims description 8
- 238000010790 dilution Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention relates to a monocrystal silicon wafer polishing process capable of obtaining a high polishing rate. In a coarse polishing process, an American Dupont SR330 coarse polishing solution is adopted, and diluted by pure water according to the ratio of 1:20 to 1:40; the flow is 23.5-24.5 L/min; a Rohm and Haas SUBA600 polishing pad is adopted; and the coarse polishing process comprises the following three steps: 1, using a coarse polishing solution to polish for 10 s, the rotating speed of a big disk being 23-27 rpm, the rotating speed of a central guide wheel being 48-52 rpm, and the pressure being 47-53 kPa; 2, using a coarse polishing solution to polish for 7-13 min, the rotating speed of the big disk being 38-42 rpm, the rotating speed of the central guide wheel being 78-82 rpm, and the pressure being 100-200 kPa; and 3, using pure water to polish for 40 s, the rotating speed of the big disk being 23+/-27 rpm, the rotating speed of the central guide wheel being 48-52 rpm, and the pressure being 47-53 kPa. The polished section processed by the process has the removal rate up to 1.83-2.09 micron/min, which is far higher than the average level of 1 micron/min in the industry, and meanwhile, and has the pass percent up to more than 90% stably. The improvement of the productivity of the polished section can reduce the fixed cost, thereby meeting the requirements of domestic and foreign markets.
Description
Technical field
What the present invention relates to single crystal silicon semiconductor polishing wafer sheet has wax polishing technology, particularly relates to a kind of monocrystalline silicon wafer crystal sheet glossing obtaining high polishing speed.
Background technology
Along with the rapid development of China's economic and the development of domestic IC industry, there is vigorous demand to the backing material monocrystalline silicon wafer crystal polished silicon wafer of semiconductor devices.Polishing production capacity is the key index that monocrystalline silicon wafer crystal polished silicon wafer is produced, and improves polishing production capacity and can to make thinner fixed cost, reduce production cost, be also conducive to meeting growing market demand.
There is wax polishing than without wax polishing, because it to become the mainstream technology of international polished silicon wafer production firm in the advantage of polished surface flatness.This type of polishing machine is generally that paster action is faster than polishing time, and the key that play the maximum production capacity of equipment is just to shorten polishing time.Polishing is generally divided into three steps, be respectively upload, polishing and download, wherein upload and download time substantially fixing, speed is substantially without the space that can promote; Therefore, polishing speed is only had to be one of principal element improving polishing production capacity.The relational expression of polishing time, removal amount and polishing speed three is: polishing time=removal amount ÷ polishing speed.
In addition, in polishing link, rough polishing, middle polishing, finishing polish three step is generally comprised.Rough polishing is mainly used in removing the damage layer produced by preceding working procedure, and it is maximum that it removes speed; It is much lower compared with rough polishing that speed is removed in middle polishing and finishing polish, and middle polishing and finishing polish are mainly used in the stress damage repairing rough polishing, and removing speed can not be too high, so the removal speed of middle polishing and finishing polish is without too large room for promotion.
In sum, improving rough polishing polishing speed is one of main factor improving polishing production capacity.
Summary of the invention
The chemically mechanical polishing of silicon chip is a complicated multinomial course of reaction, there are two dynamic processes: first polishing is carried out, make the oxidant, catalyst etc. be adsorbed in the polishing fluid on polishing cloth carry out redox dynamic process with the silicon atom on single-chip (silicon chip) surface at silicon chip surface.Secondly, polished surface reactant departs from the desorption process of single crystal surfaces, even if unreacted silicon single crystal exposed dynamic process out again.It is another significant process controlling polishing speed.In polishing fluid silicon dioxide colloid and quick rotation soft polishing cloth between mechanical friction effect, established for silicon chip surface mensuration dissolubility silicic salt deposit is wiped, enter the polishing fluid of flowing and be discharged, thus silicon chip exposes new superficial layer, continue to react with NaOH to generate silicate.In polishing process, chemical attack and mechanical friction two kinds act on and replace like this, cyclically carry out, when chemical attack and mechanical friction two kinds of effects are tending towards dynamic equilibrium, reach and remove the stress damage of silicon chip surface because of front operation remnants, thus obtain smooth, bright a, not damaged, the minute surface that geometric accuracy is high.Affect the many factors of polishing speed and polished silicon wafer surface quality, flow, pressure and polish temperature etc. during abrasive concentration and granularity, polishing machine platform as the oxidant of polishing fluid, PH conditioning agent, catalyst, throwing pad.Therefore the key obtaining high polishing speed optimizes glossing to obtain chemical balance.
The present invention carries out analysis of experiments for each factor affecting polishing, makes polishing second step remove maximum in the shortest time, finds out best polishing effect.Therefore, a kind of monocrystalline silicon wafer crystal sheet glossing obtaining high polishing speed is provided especially.
The technical scheme that the present invention takes is: a kind of monocrystalline silicon wafer crystal sheet glossing obtaining high polishing speed, it is characterized in that, Dupont SR330 rough polishing solution is adopted in rough polishing technique, be 1:20 ~ 1:40 by this rough polishing solution and pure water dilution ratio, rough polishing solution flow after dilution is 24.0 ± 0.5L/min, and adopt ROHM AND HAAS SUBA600 polishing pad, described rough polishing technique is divided into three steps and carries out polishing, and the technological parameter of its each step setting is as follows:
Step one: use rough polishing solution to carry out polishing, polishing time 10s; Deep bid rotating speed 25 ± 2rpm; Center guide wheel rotating speed 50 ± 2rpm; Pressure 50 ± 3kPa;
Step 2: use rough polishing solution to carry out polishing, polishing time 10 ± 3 min; Deep bid rotating speed 40 ± 2rpm; Center guide wheel rotating speed 80 ± 2rpm; Pressure 150 ± 50kPa; Step 3: use pure water to carry out polishing, polishing time 40s; Deep bid rotating speed 25 ± 2rpm; Center guide wheel rotating speed 50 ± 2rpm; Pressure 50 ± 3kPa.
In polishing process, work by adopting the rough polishing solution, the polishing pad that cooperatively interact and act in the art with monocrystalline silicon wafer crystal sheet, its polish temperature can reach 52 to 57 DEG C, far above the polish temperature of 30 ~ 35 DEG C between the same industry.Under these conditions, molecular thermalmotion is accelerated, and chemical attack and mechanical friction effect all obtain acceleration, and therefore polishing speed obtains and promotes.
Beneficial effect of the present invention is: the polished silicon wafer adopting this processes, removes speed and can reach 1.83 ~ 2.09 μm/min, and far above the average level of 1 μm/min of the same trade, qualification rate can be stablized and reaches more than 90% simultaneously; The lifting of polished silicon wafer production capacity reduces fixed cost, thus meets the demand of domestic and international market.
Detailed description of the invention
Below in conjunction with embodiment, the invention will be further described:
Embodiment: 6 inches of rotten sheets of (diameter 150mm) vertical pulling silication, resistivity: 15-25 Ω .cm, thickness: 625 μm, quantity: 1024.
Process equipment: have wax chip mounter, single side polishing machine.
Auxiliary material: buffing wax, ceramic disk, rough polishing solution, rough polishing cloth.
Process is as follows:
1. monocrystalline silicon wafer crystal sheet is sent into chip mounter feeding platform, chip mounter carries out wax spray to monocrystalline silicon wafer crystal sheet automatically, and is attached on ceramic disk, and paster terminates rear being automatically sent on polishing machine and prepares polishing.
2. polishing machine carries out polishing, carries out rough polishing successively, middle polishing, finishing polish three phases.
Carrying out in the rough polishing stage, adopt Dupont SR330 rough polishing solution, be 1:30 by this rough polishing solution and pure water dilution ratio, rough polishing solution flow after dilution is 24L/min, and adopt ROHM AND HAAS SUBA600 polishing pad, rough polishing technique is divided into three steps and carries out polishing, and the technological parameter of its each step setting is as follows:
Step one: use rough polishing solution to carry out polishing, polishing time 10s; Deep bid rotating speed 25rpm; Center guide wheel rotating speed 50rpm; Pressure 50kPa.
Step 2: use rough polishing solution to carry out polishing, polishing time 10min; Deep bid rotating speed 40rpm; Center guide wheel rotating speed 80rpm; Pressure 150kPa.
Step 3: use pure water to carry out polishing, polishing time 40s; Deep bid rotating speed 25rpm; Center guide wheel rotating speed 50rpm; Pressure 50kPa.
Take above technique, the polish temperature in polishing process can reach 55 DEG C.
3., after polishing, unloading platform carries out shovel piece to silicon polished, by silicon polished from pottery
Plate strips down.
4. silicon twin polishing sheet from ceramic disk shovel after carry out dewax cleaning.
5. test after cleaning: under major light visual inspection surface with or without road plan, to collapse limit etc. bad;
Geometric parameter is detected with ADE7200; With granule detecting instrument inspection surface cleanliness.
Technology for detection: in this embodiment, average removal amount is 16.4 μm/min, therefore, polishing speed is 1.93 μm/min(average level of the same trade is 1 μm/min).In 1024 qualified 988, qualification rate is 96.48%, is greater than the yield criterion of 90%.
According to the above description, the solution of the present invention can be reproduced in conjunction with techniques well known.
Claims (1)
1. one kind can obtain the monocrystalline silicon wafer crystal sheet glossing of high polishing speed, it is characterized in that, Dupont SR330 rough polishing solution is adopted in rough polishing technique, be 1:20 ~ 1:40 by this rough polishing solution and pure water dilution ratio, rough polishing solution flow after dilution is 24.0 ± 0.5L/min, and adopt ROHM AND HAAS SUBA600 polishing pad, described rough polishing technique is divided into three steps and carries out polishing, and the technological parameter of its each step setting is as follows:
Step one: use the rough polishing solution after dilution to carry out polishing, polishing time 10s; Deep bid rotating speed 25 ± 2rpm; Center guide wheel rotating speed 50 ± 2rpm; Pressure 50 ± 3kPa;
Step 2: use the rough polishing solution after dilution to carry out polishing, polishing time 10 ± 3 min; Deep bid rotating speed 40 ± 2rpm; Center guide wheel rotating speed 80 ± 2rpm; Pressure 150 ± 50kPa;
Step 3: use pure water to carry out polishing, polishing time 40s; Deep bid rotating speed 25 ± 2rpm; Center guide wheel rotating speed 50 ± 2rpm; Pressure 50 ± 3kP.
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| CN102962756B true CN102962756B (en) | 2015-01-21 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107344304A (en) * | 2017-06-30 | 2017-11-14 | 天津中环领先材料技术有限公司 | A kind of silicon chip polishing method for extending rough polishing solution service life |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107378747B (en) * | 2017-07-11 | 2019-04-02 | 天津华海清科机电科技有限公司 | CMP process for MEMS device |
| CN107855922B (en) * | 2017-10-31 | 2019-12-17 | 天津中环领先材料技术有限公司 | Process for improving geometric parameters of 8-inch silicon wafer |
| CN108161579A (en) * | 2017-12-11 | 2018-06-15 | 上海申和热磁电子有限公司 | Liquid thinner ratio is thrown in a kind of adjustment improves the unilateral thick method of polishing |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US5245790A (en) * | 1992-02-14 | 1993-09-21 | Lsi Logic Corporation | Ultrasonic energy enhanced chemi-mechanical polishing of silicon wafers |
| CN100383209C (en) * | 2006-05-31 | 2008-04-23 | 河北工业大学 | Chemical and mechanical water-free polishing liquid for lithium-cessium borate crystal and leveling method |
| US20080125018A1 (en) * | 2006-11-27 | 2008-05-29 | United Microelectronics Corp. | Solution for fixed abrasive chemical mechanical polishing process and fixed abrasive chemical mechanical polishing method |
| CN101195729A (en) * | 2006-12-08 | 2008-06-11 | 安集微电子（上海）有限公司 | Application of non-ionic polyalcohol in producing and using self-stopping polysilicon polishing solution |
| CN102117746A (en) * | 2010-01-05 | 2011-07-06 | 上海华虹Nec电子有限公司 | Chemical mechanical polishing (CMP) stepwise polishing method |
| CN102240926B (en) * | 2010-05-13 | 2013-06-05 | 鸿富锦精密工业（深圳）有限公司 | Method for grinding surface of zirconium base bulk amorphous alloy |
| CN102019582B (en) * | 2010-12-10 | 2012-05-09 | 天津中环领先材料技术有限公司 | Polishing process of 8-inch polished wafers doped with silicon lightly |
| CN102019574B (en) * | 2010-12-10 | 2011-09-14 | 天津中环领先材料技术有限公司 | Wax-free polishing process of ultrathin zone-melting silicon polished slice |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107344304A (en) * | 2017-06-30 | 2017-11-14 | 天津中环领先材料技术有限公司 | A kind of silicon chip polishing method for extending rough polishing solution service life |
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Effective date of registration: 20191220 Address after: 214200 Dongfen Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Co-patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 300384 Tianjin Huayuan Technology Industry Park Xiqing district (outer ring) Haitai Road No. 12 Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
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Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
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