CN108161579A - Liquid thinner ratio is thrown in a kind of adjustment improves the unilateral thick method of polishing - Google Patents
Liquid thinner ratio is thrown in a kind of adjustment improves the unilateral thick method of polishing Download PDFInfo
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- CN108161579A CN108161579A CN201711306917.4A CN201711306917A CN108161579A CN 108161579 A CN108161579 A CN 108161579A CN 201711306917 A CN201711306917 A CN 201711306917A CN 108161579 A CN108161579 A CN 108161579A
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- Prior art keywords
- thrown
- thinner ratio
- liquid thinner
- throwing
- thick method
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The present invention, which provides, throws the unilateral thick method of liquid thinner ratio improvement polishing in a kind of adjustment, middle throwing liquid thinner ratio ratio is promoted, in the case where not reducing yield, larger improvement is achieved to polished silicon wafer surface roughness, liquid thinner ratio is thrown in improving simultaneously and saves material use, also makes not small contribution for company's cost declining.
Description
Technical field
The present invention relates to polishing wafer machining process fields, and in particular to liquid thinner ratio is thrown in a kind of adjustment improves polishing
Unilateral thick method.
Background technology
In actual production demand, the requirement for polished silicon wafer surface roughness is generally required in 5 angstrom levels hereinafter, and using existing
The method of technology, the polished silicon wafer surface roughness after polishing is poor, and bad rate is higher, about between 9%-16.2%, and is produced into
This height.
Invention content
In view of the problems of the existing technology, the present invention, which provides, throws liquid thinner ratio to improve polishing unilateral thick in a kind of adjustment
Middle throwing liquid thinner ratio ratio is promoted, in the case where not reducing yield, larger change is achieved to polished silicon wafer surface roughness by method
It is kind, while liquid thinner ratio is thrown in improving and saves material use, also not small contribution is made for company's cost declining.
The technical scheme is that：Liquid thinner ratio is thrown in a kind of adjustment improves the unilateral thick method of polishing, including as follows
Step：
Step 1: it is 1 that liquid thinner ratio is thrown in adjustment:28~32；
Step 2: rough polishing：It is 2.0 ± 0.5 liters/min that flow quantity is thrown in control, and rough polishing temperature is 32 DEG C -50 DEG C, pH value
It is 11.0 ± 0.1, rotating speed is 45~55 revs/min；
Step 3: middle throwing：It is 0.50 ± 0.2 liter/min that flow quantity is thrown in control, and rough polishing temperature is 30 DEG C -40 DEG C, pH value
For 9-10, rotating speed is 30~40 revs/min；
Step 4: essence is thrown：It is 0.50 ± 0.2 liter/min that flow quantity is thrown in control, and rough polishing temperature is 30 DEG C -40 DEG C, pH value
For rotating speed is 30~40 revs/min.
Further, it is 1 that liquid thinner ratio is thrown in step 1, in adjustment:30.
Further, the rotating speed of rough polishing described in step 2 is 50 revs/min.
Further, the middle throwing rotating speed is 35 revs/min in step 3.
Further, it is 35 revs/min that essence, which throws the rotating speed, in step 4.
Further, the rough polishing time is 25-35 minutes in step 2.
Further, the middle throwing time is 10 minutes or 12 minutes in step 3.
Further, the essence throwing time is 10 minutes or 5 minutes in step 4.
The beneficial effects of the invention are as follows：After adjusting process, silicon chip surface roughness, polished silicon wafer center degree face can be reduced
Roughness can reduce by 28%；Edge degree surface roughness can reduce by 13%；
Monthly usage amount reduces nearly 1/4 to middle throwing liquid, and liquid usage amount is thrown in saving；
Whole fraction defective can be controlled 5% hereinafter, the final yield of chemically mechanical polishing can be improved.
Description of the drawings
Fig. 1 is three group (1 of the experimental group under 50 power microscopes:30) planar condition is significantly better than control group (1:22.5)
Planar condition.
Fig. 2 throws liquid thinner ratio in and is adjusted to 1:When 30, from the point of view of this Experimental comparison results, even if cloth after dilution
When latter stage (opposite slightly influences maximum period) particle (>=0.3 micron, 0.2 micron -0.3 micron, 0.16 micron -0.2 micron)
Can with initial performances are suitable during cloth before dilution.
Fig. 3 throws liquid thinner ratio in and is adjusted to 1:When 30, tenor measures comparison diagram.
Specific embodiment
The present invention is described further below in conjunction with the accompanying drawings.
The present invention, which provides, throws the unilateral thick method of liquid thinner ratio improvement polishing in a kind of adjustment, include the following steps：
Step 1: it is 1 that liquid thinner ratio is thrown in adjustment:30；
Step 2: rough polishing：It is 2.0 ± 0.5 liters/min that flow quantity is thrown in control, and rough polishing temperature is 32 DEG C -50 DEG C, pH value
It is 11.0 ± 0.1, rotating speed is 50 revs/min, and the time is 25-35 points：It is related with dopant and crystal orientation.
Step 3: middle throwing：It is 0.50 ± 0.2 liter/min that flow quantity is thrown in control, and rough polishing temperature is 30 DEG C -40 DEG C, pH value
For 9-10, rotating speed is 35 revs/min, and the time is 10 minutes or 12 minutes：With whether forming a film and resistivity is related.
Step 4: essence is thrown：It is 0.50 ± 0.2 liter/min that flow quantity is thrown in control, and rough polishing temperature is 30 DEG C -40 DEG C, pH value
For 9.1-9.5, rotating speed is 35 revs/min, and the time is 10 minutes or 5 minutes：With whether forming a film and resistivity is related.
When above each process conditions reach balance, the burnishing surface of preferable minute surface could be obtained.
When rotating speed is too low, chemical action is better than mechanism, and serious dotted face caused by meeting is coarse, when rotating speed is excessively high
When, mechanism is better than chemical action, causes strip-shaped surface coarse.
When the temperature is excessively high, chemical action is better than mechanism, serious birds-eye view shallow hole caused by, and dotted face is thick
Rough, when the temperature is too low, mechanical work is better than chemical action, can cause burnishing surface stain, and strip-shaped surface is coarse.
When PH is too low, mechanical work is better than chemical action, and strip-shaped surface can be caused coarse, burnishing surface mist,
When PH is excessively high, chemical action is better than mechanism, and serious dotted face caused by meeting is coarse.
When flow is too low, mechanical work is better than chemical action, and strip-shaped surface can be caused coarse, burnishing surface mist,
When the flow rate is excessively high, chemical action is better than mechanism, can caused by serious dotted face it is coarse, flatness compared with
Difference.
Through experiment, as shown in Figure 1, under 50 power microscopes, three group (1 of experimental group:30) planar condition is significantly better than control
Group (1:22.5) planar condition.The surface roughness of control group is right for 7 Izods, and the surface roughness of three groups of test group 3 angstroms with
Under.
Liquid thinner ratio is thrown in the middle is adjusted to 1:When 30, from the point of view of this Experimental comparison results, even if Bu Shimo after dilution
The particle (>=0.3 micron, 0.2 micron -0.3 micron, 0.16 micron -0.2 micron) of phase (opposite slightly influences maximum period) can be with
With initial performances are suitable during cloth before dilution.Specific test data is as shown in Figure 2.
As shown in table 1, conventional group yield is 91%, and experimental group yield is more than 95%, better than conventional product.
Table one
Wherein, the coarse incidence in face is 0, and surface roughness is below 3 angstroms.
As shown in figure 3, throwing liquid thinner ratio in the middle is adjusted to 1:When 30, tenor measures, and works as with conventional condition.
As shown in table 2, through experiment, polished silicon wafer center and edge have clear improvement.
Table two
From user feedback, it can be seen that face slightly can be improved significantly, judge OK.
Measured data result is good, judges OK.
Using liquid is thrown in the present invention, monthly usage amount reduces nearly 1/4, monthly saves Material Cost about 280000pcs*
(0.00770kg/pcs-0.00578kg/pcs) * 48.4015 yuan/kg=26020.65 members.(monthly produce 280K calculating) is cut
52041.3 yuan are saved altogether only on December 31st, 2016
After adjusting process, polished silicon wafer center degree face is coarse to reduce by 28%, and edge degree face is coarse to reduce by 13%,It is horizontal
It is interior, it is on close level with other producers of the country.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (8)
- Unilateral thick method is polished 1. throwing liquid thinner ratio in a kind of adjustment and improving, it is characterised in that：Include the following steps：Step 1: it is 1 that liquid thinner ratio is thrown in adjustment:28~32；Step 2: rough polishing：It is 2.0 ± 0.5 liters/min that flow quantity is thrown in control, and rough polishing temperature is 32 DEG C -50 DEG C, and pH value is 11.0 ± 0.1, rotating speed is 45~55 revs/min；Step 3: middle throwing：It is 0.50 ± 0.2 liter/min that flow quantity is thrown in control, and rough polishing temperature is 30 DEG C -40 DEG C, pH value 9- 10, rotating speed is 30~40 revs/min；Step 4: essence is thrown：It is 0.50 ± 0.2 liter/min that flow quantity is thrown in control, and rough polishing temperature is 30 DEG C -40 DEG C, and pH value is, Rotating speed is 30~40 revs/min.
- Unilateral thick method is polished 2. throwing liquid thinner ratio in a kind of adjustment according to claim 1 and improving, it is characterised in that： It is 1 that liquid thinner ratio is thrown in step 1, in adjustment:30.
- Unilateral thick method is polished 3. throwing liquid thinner ratio in a kind of adjustment according to claim 1 and improving, it is characterised in that： The rotating speed of rough polishing described in step 2 is 50 revs/min.
- Unilateral thick method is polished 4. throwing liquid thinner ratio in a kind of adjustment according to claim 1 and improving, it is characterised in that： The middle throwing rotating speed is 35 revs/min in step 3.
- Unilateral thick method is polished 5. throwing liquid thinner ratio in a kind of adjustment according to claim 1 and improving, it is characterised in that： It is 35 revs/min that essence, which throws the rotating speed, in step 4.
- Unilateral thick method is polished 6. throwing liquid thinner ratio in a kind of adjustment according to claim 1 and improving, it is characterised in that： The rough polishing time is 25-35 minutes in step 2.
- Unilateral thick method is polished 7. throwing liquid thinner ratio in a kind of adjustment according to claim 1 and improving, it is characterised in that： The middle throwing time is 10 minutes or 12 minutes in step 3.
- Unilateral thick method is polished 8. throwing liquid thinner ratio in a kind of adjustment according to claim 1 and improving, it is characterised in that： The essence throwing time is 10 minutes or 5 minutes in step 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711306917.4A CN108161579A (en) | 2017-12-11 | 2017-12-11 | Liquid thinner ratio is thrown in a kind of adjustment improves the unilateral thick method of polishing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711306917.4A CN108161579A (en) | 2017-12-11 | 2017-12-11 | Liquid thinner ratio is thrown in a kind of adjustment improves the unilateral thick method of polishing |
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| CN108161579A true CN108161579A (en) | 2018-06-15 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102019582A (en) * | 2010-12-10 | 2011-04-20 | 天津中环领先材料技术有限公司 | Polishing process of 8-inch polished wafers doped with silicon lightly |
| CN102962756A (en) * | 2012-12-12 | 2013-03-13 | 天津中环领先材料技术有限公司 | Monocrystal silicon wafer polishing process capable of obtaining high polishing rate |
| CN103072073A (en) * | 2012-12-13 | 2013-05-01 | 天津中环领先材料技术有限公司 | Polishing process capable of maintaining long service life of silicon wafer polished section minority carrier |
| CN104476383A (en) * | 2014-11-21 | 2015-04-01 | 深圳市力合材料有限公司 | Circulation polishing device of silicon wafer and circulation polishing method |
| CN107344304A (en) * | 2017-06-30 | 2017-11-14 | 天津中环领先材料技术有限公司 | A kind of silicon chip polishing method for extending rough polishing solution service life |
-
2017
- 2017-12-11 CN CN201711306917.4A patent/CN108161579A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102019582A (en) * | 2010-12-10 | 2011-04-20 | 天津中环领先材料技术有限公司 | Polishing process of 8-inch polished wafers doped with silicon lightly |
| CN102962756A (en) * | 2012-12-12 | 2013-03-13 | 天津中环领先材料技术有限公司 | Monocrystal silicon wafer polishing process capable of obtaining high polishing rate |
| CN103072073A (en) * | 2012-12-13 | 2013-05-01 | 天津中环领先材料技术有限公司 | Polishing process capable of maintaining long service life of silicon wafer polished section minority carrier |
| CN103072073B (en) * | 2012-12-13 | 2015-01-07 | 天津中环领先材料技术有限公司 | Polishing process capable of maintaining long service life of silicon wafer polished section minority carrier |
| CN104476383A (en) * | 2014-11-21 | 2015-04-01 | 深圳市力合材料有限公司 | Circulation polishing device of silicon wafer and circulation polishing method |
| CN107344304A (en) * | 2017-06-30 | 2017-11-14 | 天津中环领先材料技术有限公司 | A kind of silicon chip polishing method for extending rough polishing solution service life |
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Application publication date: 20180615 |