CN101367193A - Silicon slice grinding surface scuffing control method - Google Patents
Silicon slice grinding surface scuffing control method Download PDFInfo
- Publication number
- CN101367193A CN101367193A CNA2007100587519A CN200710058751A CN101367193A CN 101367193 A CN101367193 A CN 101367193A CN A2007100587519 A CNA2007100587519 A CN A2007100587519A CN 200710058751 A CN200710058751 A CN 200710058751A CN 101367193 A CN101367193 A CN 101367193A
- Authority
- CN
- China
- Prior art keywords
- grinding
- control method
- agent
- scuffing
- silicon chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention provides a method for controlling lapped face scuffing of a silicon chip, which comprises the following steps: the silicon chip to be lapped is clamped to a lapping plate of a lapper, the surface of the silicon chip to be lapped is supplied with lapping liquid, the lapper is subjected to pressure and the lapping plate of the lapper is controlled to rotate, and the surface of the object to be lapped is lapped; the lapping liquid used comprises abrasive filler, osmotic agent, pH regulator, surface active agent, chelon and deionized water; and the lapping pressure of the lapper is controlled below 75kPa, the rotating speed of an upper lapping plate is controlled below 200 rounds per minute, and the rotating speed of a lower lapping plate is controlled below 200 rounds per minute. The method can effectively reduce the lapped face scuffing of the silicon chip, provides better surface quality, and does not increase the production cost.
Description
Technical field
The present invention relates to the silicon chip processing method, particularly a kind of integrated circuit substrate monocrystalline silicon piece scoring abrasive surface control method.
Background technology
Grinding is the first time machining of silicon chip section back to its surface, also is the most basic operation in the silicon chip process technology.The purpose of grinding is for the relief lines of removing silicon chip surface and uneven, makes Surface Machining damage layer reach consistent also control surface and scratches the length depth, makes it in the chemical attack process, and surface corrosion speed reaches uniformity.
In the silicon chip grinding process, in order to improve product percent of pass, the control scoring abrasive surface is most important.Present most of grinding fluid for silicon chip in order to pursue place to go speed in the process of lapping, often adopts the bigger abrasive material of particle diameter, has caused grinding the increase of damage layer and the increase of surface tear quantity.Open to disclose in the 2001-323254 communique the spy and have the silica lapping liquid that specified particle diameter distributes, this lapping liquid is selected for use and is close to monodispersed cataloid as abrasive material, grinds the back silicon chip surface and has a large amount of the scuffing.No. 6143662 communique of United States Patent (USP) discloses a kind of Ginding process that uses little polishing particles and big polishing particles mixed slurry, and there be a large amount of the scuffing in the same back silicon chip surface that grinds.
In order to improve the silicon chip grinding quality, reduce the scuffing of silicon chip surface, also occur all different lapping liquids in recent years and ground the control scheme that the rear surface scratches.As in patent 03155318.4, reached the grinding littler by the control abrasive size and scratched, but because the change of abrasive size causes the removal speed of grinding silicon chip to descend than last two kinds of lapping liquids.In patent 200510055710.5, proposed to adopt the Ginding process of preparing spherical SiO 2 abrasive material, reached less grinding and scratched, but this kind method has increased production cost to the requirement height of abrasive material, is not easy in the production to realize.
Therefore, under maintenance higher removal speed and the prerequisite than low production cost, inventing a kind of monocrystalline silicon piece that reduces and grind the method that scratches, is present urgent problem.
Summary of the invention
Main purpose of the present invention is to overcome the above-mentioned shortcoming that existing product exists, and provide a kind of silicon slice grinding surface scuffing control method, it is by improving the grinding technics condition of silicon chip, scuffing with effective reduction grinding silicon chip surface, guarantee that simultaneously silicon chip grinding has higher removal speed, improve the silicon chip quality, and production cost is lower.
The objective of the invention is to realize by following technical scheme.
Silicon slice grinding surface scuffing control method of the present invention, comprise and to be clamped on the abrasive disk of grinder by grinding silicon chip, lapping liquid is supplied to ground silicon chip surface, grinder is exerted pressure, and the abrasive disk rotation of control grinder, and to grinding on the grinding charge surface; It is characterized in that: described lapping liquid comprises abrasive material, bleeding agent, PH conditioning agent, surfactant, chelating agent and deionized water; Grinding pressure on the described grinder is controlled at below the 75kPa, and control upper millstone rotating speed be below the 200rpm, the rotating speed of lower millstone is below the 200rpm.
Aforesaid silicon slice grinding surface scuffing control method is characterized in that: described lapping liquid comprises abrasive material, bleeding agent, PH conditioning agent, surfactant, chelating agent and deionized water, and the shared mass percent of various compositions is: abrasive material is 15.0% to 30.0%; Bleeding agent is 3% to 5%; The PH conditioning agent is 5% to 15%; Surfactant is 0.1% to 1.0%; Chelating agent is 1% to 3%; Deionized water is a surplus.
Aforesaid silicon slice grinding surface scuffing control method is characterized in that: described abrasive material is that particle diameter is the silica (SiO of 100 to 150 nanometers
2), particle diameter is 2 to 5 microns ceria (CeO
2), particle diameter is 3 to 6 microns titanium dioxide (TiO
2) or particle diameter be 4 to 8 microns boron carbide; Described bleeding agent is APEO (JFC) or phosphate; Described PH conditioning agent is inorganic base or organic base; Described chelating agent is a kind of or its combination in ethylenediamine tetra-acetic acid (EDTA), disodium EDTA (EDTA disodium), azanol and the amine.
Aforesaid silicon slice grinding surface scuffing control method is characterized in that: described organic base is a kind of in amine or the azanol or their combination; Described amine is ethylenediamine; Described azanol is triethanolamine, tetrahydroxyethy-lethylenediamine, hexahydroxy propyl group propane diamine or TMAH; Described inorganic base is ammoniacal liquor, NaOH or potassium hydroxide.
Aforesaid silicon slice grinding surface scuffing control method is characterized in that: described surfactant is a nonionic surface active agent, and this nonionic surface active agent is AEO, alkylolamides or the mixture of the two; Described AEO is that the degree of polymerization is that 20 the AEO (0-20) or the degree of polymerization are 25 AEO (0-25); Described alkylolamides is a lauroyl monoethanolamine.
Aforesaid silicon slice grinding surface scuffing control method is characterized in that: the grinding pressure of described grinder is preferably below the 50kPa, applies in the process and at the uniform velocity adds to required pressure by 0, keeps stable, grinds under pressure stable.
Aforesaid silicon slice grinding surface scuffing control method is characterized in that: the rotating speed of described grinder top lap is preferably 100 to 150rpm, and the rotating speed of following abrasive disk is preferably 100 to 150rpm.
The beneficial effect of the control method of scoring abrasive surface of silicon chip of the present invention, it is by using the rational lapping liquid of configuration, adjust the method for grinding pressure and control upper millstone, lower millstone rotating speed, effectively reduce the scuffing on grinding silicon chip surface, guarantee that simultaneously silicon chip grinding has higher removal speed, improve the silicon chip quality, and production cost is lower.
The specific embodiment
Silicon slice grinding surface scuffing control method of the present invention, comprise and to be clamped on the abrasive disk of grinder by grinding silicon chip, lapping liquid is supplied to ground silicon chip surface, grinder is exerted pressure, and the abrasive disk rotation of control grinder, and to grinding on the grinding charge surface; Its improvements are: described lapping liquid comprises abrasive material, bleeding agent, PH conditioning agent, surfactant, chelating agent and deionized water; Grinding pressure on the described grinder is controlled at below the 75kPa, and control upper millstone rotating speed be below the 200rpm, the rotating speed of lower millstone is below the 200rpm.
Silicon slice grinding surface scuffing control method of the present invention, wherein, lapping liquid comprises abrasive material, bleeding agent, PH conditioning agent, surfactant, chelating agent and deionized water, the shared mass percent of various compositions is: abrasive material is 15.0% to 30.0%; Bleeding agent is 3% to 5%; The PH conditioning agent is 5% to 15%; Surfactant is 0.1% to 1.0%; Chelating agent is 1% to 3%; Deionized water is a surplus.Described abrasive material is that particle diameter is the silica (SiO of 100 to 150 nanometers
2), particle diameter is 2 to 5 microns ceria (CeO
2), particle diameter is 3 to 6 microns titanium dioxide (TiO
2) or particle diameter be 4 to 8 microns boron carbide; Described bleeding agent is APEO (JFC) or phosphate; Described PH conditioning agent is inorganic base or organic base; Described chelating agent is a kind of or its combination in ethylenediamine tetra-acetic acid (EDTA), disodium EDTA (EDTA disodium), azanol and the amine; Described organic base is a kind of in amine or the azanol or their combination; Described amine is ethylenediamine; Azanol is triethanolamine, tetrahydroxyethy-lethylenediamine, hexahydroxy propyl group propane diamine or TMAH; Described inorganic base is ammoniacal liquor, NaOH or potassium hydroxide; Described surfactant is a nonionic surface active agent, and this nonionic surface active agent is AEO, alkylolamides or the mixture of the two; Described AEO is that the degree of polymerization is that 20 the AEO (0-20) or the degree of polymerization are 25 AEO (0-25); Described alkylolamides is a lauroyl monoethanolamine.
Silicon slice grinding surface scuffing control method of the present invention, the grinding pressure of its grinder is preferably below the 50kPa, applies in the process and at the uniform velocity adds to required pressure by 0, keeps stable, grinds under pressure stable; The rotating speed of grinder top lap is preferably 100 to 150rpm, and the rotating speed of following abrasive disk is preferably 100 to 150rpm.
The invention has the advantages that, utilize described lapping liquid, under above-mentioned grinding technics condition, can effectively reduce the scuffing of silicon chip surface, surface quality preferably is provided, and does not increase production cost.
Embodiment 1:
2 kilograms of preparation grinding fluid for silicon chip.
Grinding fluid for silicon chip, form by boron carbide abrasive material, NaOH, lauroyl monoethanolamine, phosphate, disodium EDTA and deionized water, take by weighing 15% boron carbide of preparation lapping liquid weight respectively, the particle diameter of boron carbide is 4 microns, 12% NaOH, 0.5% lauroyl monoethanolamine, 3.5% phosphate, 1% disodium EDTA, deionized water are surplus.
The boron carbide abrasive material, NaOH, lauroyl monoethanolamine, phosphate, the disodium EDTA that take by weighing are joined in the deionized water successively, and it is standby at room temperature to stir.
Adopt twin grinder during grinding, the abrasive disk material is a graphite cast iron, grinding pressure 25kPa, top lap rotating speed 120rpm, following lap speed 120rpm.
Experiment effect is analyzed: utilizes above-mentioned lapping liquid, press 1:100 with deionized water and dilute, under these conditions, with constant rate of speed grinding silicon chip 15 minutes.Detect silicon chip surface by 50 power microscopes, measurement result does not have scuffing, and the silicon wafer thickness of measuring before and after grinding is poor, divided by milling time, obtains removing the speed size and is 490nm/min, and surface roughness value is 1.3nm.
Embodiment 2:
1 kilogram of preparation grinding fluid for silicon chip.
Grinding fluid for silicon chip, by abrasive silica, TMAH, the degree of polymerization is that 20 AEO, APEO (JFC), ethylenediamine tetra-acetic acid and deionized water are formed, take by weighing 20% abrasive silica of preparation lapping liquid weight respectively, the particle diameter of silica is 100 nanometers; 8% TMAH; 0.3% the degree of polymerization is 20 AEO; 5% JFC; 2% ethylenediamine tetra-acetic acid; Deionized water is a surplus.
With abrasive silica, TMAH, the degree of polymerization that takes by weighing is that 20 AEO, APEO (JFC), ethylenediamine tetra-acetic acid join in the deionized water successively, and it is standby at room temperature to stir.
Adopt twin grinder during grinding, the abrasive disk material is a graphite cast iron, grinding pressure 20kPa, top lap rotating speed 100rpm, following lap speed 100rpm.
Experiment effect is analyzed: utilizes above-mentioned lapping liquid, press 1:100 with deionized water and dilute, under these conditions, with constant rate of speed grinding silicon chip 15 minutes.Detect silicon chip surface by 50 power microscopes, measurement result does not have scuffing, and is poor by the silicon wafer thickness of measuring before and after grinding, and divided by milling time, obtains removing the speed size and is 520nm/min, and surface roughness value is 1.4nm.
The carbon number of fatty alcohol is 12 to 18 in the AEO that relates among the present invention and the embodiment and use; The room temperature that relates to is 20-25 ℃.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, every foundation technical spirit of the present invention all still belongs in the scope of technical solution of the present invention any simple modification, equivalent variations and modification that above embodiment did.
Claims (7)
1. silicon slice grinding surface scuffing control method, comprise and to be clamped on the abrasive disk of grinder by grinding silicon chip, lapping liquid is supplied to ground silicon chip surface, grinder is exerted pressure, and the abrasive disk rotation of control grinder, and to grinding on the grinding charge surface; It is characterized in that: described lapping liquid comprises abrasive material, bleeding agent, PH conditioning agent, surfactant, chelating agent and deionized water; Grinding pressure on the described grinder is controlled at below the 75kPa, and control upper millstone rotating speed be below the 200rpm, the rotating speed of lower millstone is below the 200rpm.
2. silicon slice grinding surface scuffing control method according to claim 1, it is characterized in that: described lapping liquid comprises abrasive material, bleeding agent, PH conditioning agent, surfactant, chelating agent and deionized water, and the shared mass percent of various compositions is: abrasive material is 15.0% to 30.0%; Bleeding agent is 3% to 5%; The PH conditioning agent is 5% to 15%; Surfactant is 0.1% to 1.0%; Chelating agent is 1% to 3%; Deionized water is a surplus.
3. silicon slice grinding surface scuffing control method according to claim 2 is characterized in that: described abrasive material is that particle diameter is the silica (SiO of 100 to 150 nanometers
2), particle diameter is 2 to 5 microns ceria (CeO
2), particle diameter is 3 to 6 microns titanium dioxide (TiO
2) or particle diameter be 4 to 8 microns boron carbide; Described bleeding agent is APEO (JFC) or phosphate; Described PH conditioning agent is inorganic base or organic base; Described chelating agent is a kind of or its combination in ethylenediamine tetra-acetic acid (EDTA), disodium EDTA (EDTA disodium), azanol and the amine.
4. silicon slice grinding surface scuffing control method according to claim 3 is characterized in that: described organic base is a kind of in amine or the azanol or their combination; Described amine is ethylenediamine; Described azanol is triethanolamine, tetrahydroxyethy-lethylenediamine, hexahydroxy propyl group propane diamine or TMAH; Described inorganic base is ammoniacal liquor, NaOH or potassium hydroxide.
5. silicon slice grinding surface scuffing control method according to claim 1, it is characterized in that: described surfactant is a nonionic surface active agent, and this nonionic surface active agent is AEO, alkylolamides or the mixture of the two; Described AEO is that the degree of polymerization is that 20 the AEO (O-20) or the degree of polymerization are 25 AEO (O-25); Described alkylolamides is a lauroyl monoethanolamine.
6. silicon slice grinding surface scuffing control method according to claim 1 is characterized in that: the grinding pressure of described grinder is preferably below the 50kPa, applies in the process and at the uniform velocity adds to required pressure by 0, keeps stable, grinds under pressure stable.
7. silicon slice grinding surface scuffing control method according to claim 1 is characterized in that: the rotating speed of described grinder top lap is preferably 100 to 150rpm, and the rotating speed of following abrasive disk is preferably 100 to 150rpm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100587519A CN101367193A (en) | 2007-08-15 | 2007-08-15 | Silicon slice grinding surface scuffing control method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100587519A CN101367193A (en) | 2007-08-15 | 2007-08-15 | Silicon slice grinding surface scuffing control method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101367193A true CN101367193A (en) | 2009-02-18 |
Family
ID=40411259
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007100587519A Pending CN101367193A (en) | 2007-08-15 | 2007-08-15 | Silicon slice grinding surface scuffing control method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101367193A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105651654A (en) * | 2015-12-30 | 2016-06-08 | 平顶山易成新材料有限公司 | Method for detecting scratch degree of silicon carbide powder for precision grinding |
| CN106318318A (en) * | 2015-06-30 | 2017-01-11 | 优备材料有限公司 | Abrasive particles, polishing slurry and method of fabricating abrasive particles |
| CN106914815A (en) * | 2015-12-24 | 2017-07-04 | 上海超硅半导体有限公司 | The Ginding process of semi-conductor silicon chip |
| CN115477925A (en) * | 2022-09-23 | 2022-12-16 | 珠海市创智成功科技有限公司 | Chemical grinding liquid formula applied to wafer back thinning |
-
2007
- 2007-08-15 CN CNA2007100587519A patent/CN101367193A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106318318A (en) * | 2015-06-30 | 2017-01-11 | 优备材料有限公司 | Abrasive particles, polishing slurry and method of fabricating abrasive particles |
| CN106318318B (en) * | 2015-06-30 | 2019-10-01 | 优备材料有限公司 | Abrasive particle, polishing slurries and the method for manufacturing abrasive particle |
| CN106914815A (en) * | 2015-12-24 | 2017-07-04 | 上海超硅半导体有限公司 | The Ginding process of semi-conductor silicon chip |
| CN105651654A (en) * | 2015-12-30 | 2016-06-08 | 平顶山易成新材料有限公司 | Method for detecting scratch degree of silicon carbide powder for precision grinding |
| CN105651654B (en) * | 2015-12-30 | 2018-08-28 | 平顶山易成新材料有限公司 | A kind of scuffing degree detection method of precise finiss silicon carbide powder |
| CN115477925A (en) * | 2022-09-23 | 2022-12-16 | 珠海市创智成功科技有限公司 | Chemical grinding liquid formula applied to wafer back thinning |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101367189A (en) | Silicon slice glazed surface scuffing control method | |
| CN101049681A (en) | Method for controlling scoring abrasive surface of silicon chip | |
| CN103013345B (en) | Oily diamond grinding liquid and preparation method thereof | |
| CN101451046B (en) | Polishing composition for silicon wafer polishing | |
| CN100478412C (en) | Chemical mechanical polishing pulp for sapphire substrate underlay | |
| CN100579723C (en) | Laser glass mechanical chemical polishing method | |
| CN103240666B (en) | A kind of Ginding process of solaode germanium substrate | |
| CN106086897A (en) | A kind of rustless steel light guide plate polishing fluid and its preparation method and application | |
| CN102172879B (en) | Method for processing soft and crisp LBO crystals based on consolidated abrasive polishing pad | |
| CN101671528A (en) | Polishing liquid for polishing monocrystalline silicon piece chemical machine | |
| CN102343547A (en) | Thermochemistry mechanical polishing method of sapphire substrate material and polishing solution | |
| CN105462504A (en) | C-direction sapphire polishing solution and preparation method thereof | |
| CN101368070A (en) | Nano-silicon dioxide abrasive material polishing solution for processing crystallizing glass | |
| CN102250582A (en) | Method for preparing submicron polycrystalline diamond abrasive with narrow particle size distribution | |
| CN101367193A (en) | Silicon slice grinding surface scuffing control method | |
| CN114231182A (en) | Easy-to-cleave gallium oxide wafer chemical mechanical polishing process, polishing solution and preparation method thereof | |
| CN102172859B (en) | Processing method for ultrathin plain glass based on consolidated abrasive | |
| CN101307211A (en) | Method for preparing nanometer silicon dioxide abradant polishing solution | |
| CN110099977A (en) | The grinding method of composition for polishing and Silicon Wafer | |
| CN101367194A (en) | Silicon slice grinding rate control method | |
| CN102399496A (en) | Abrasive composition for rough polishing of wafers | |
| CN106736875B (en) | A kind of processing method of sapphire dome | |
| CN101353556A (en) | Polishing solution for aluminum alloy | |
| CN102407483A (en) | High-efficiency nano-precision reducing method for semiconductor wafer | |
| CN106272034A (en) | A kind of grinding pad for processing soft brittle crystal material and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20090218 |