CN101367194A - Silicon slice grinding rate control method - Google Patents
Silicon slice grinding rate control method Download PDFInfo
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- CN101367194A CN101367194A CNA2007100587612A CN200710058761A CN101367194A CN 101367194 A CN101367194 A CN 101367194A CN A2007100587612 A CNA2007100587612 A CN A2007100587612A CN 200710058761 A CN200710058761 A CN 200710058761A CN 101367194 A CN101367194 A CN 101367194A
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- grinding rate
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Abstract
The invention provides a method for controlling the lapping speed of a silicon chip, which comprises the following steps: the silicon chip to be lapped is clamped to a lapping plate of a lapper, the surface of the silicon chip to be lapped is supplied with lapping liquid, the lapper is subjected to pressure and the lapping plate of the lapper is controlled to rotate, and the surface of the object to be lapped is lapped; the improvement of the method is that the lapping liquid used comprises abrasive filler, osmotic agent, pH regulator, surface active agent and deionized water; and the lapping pressure of the lapper is controlled below 50kPa, the rotating speed of an upper lapping plate is controlled below 200 rounds per minute, and the rotating speed of a lower lapping plate is controlled below 200 rounds per minute. The method can effectively improve the lapping speed for lapping the silicon chip, guarantee that the silicon chip has better surface quality after lapping, improve the production efficiency, and reduce the production cost.
Description
Technical field
The present invention relates to the silicon chip processing method, relate in particular to a kind of silicon slice grinding rate control method that the integrated circuit substrate is ground with monocrystalline silicon piece.
Background technology
Silicon is to have diamond crystal structures, with the hard brittle material of covalent bonds, is a kind of good semi-conducting material between atom, and what constitute the IC semiconductor chip at present all is silicon wafer (silicon chip) more than 90%.For printed IC on silicon chip, and tight with other combination of elements, the surface of silicon chip must be straight, and particularly the degree of integration along with integrated circuit improves constantly, to the stricter requirement of requirement proposition of silicon chip surface glacing flatness.
Grinding is the first time machining of silicon chip section back to its surface, also is the most basic operation in the silicon chip process technology.The purpose of grinding is for the relief lines of removing silicon chip surface and uneven, makes the Surface Machining damage reach consistent, makes it in the chemical attack process, and surface corrosion speed reaches uniformity.Usually grinding step comprises and being pressed onto on the abrasive disk by the anchor clamps of grinding silicon chip supporting, or will be clamped on the abrasive disk by grinding silicon chip, lapping liquid is supplied to by the grinding silicon chip surface, grinder is exerted pressure, and adjust control at suitable pressures, the abrasive disk of grinder is rotated, thereby grinding operation is carried out on the grinding charge surface.
In the silicon chip grinding process, suitable grinding rate is the key link of enhancing productivity.Must use lapping liquid in the silicon chip grinding, the practitioner of present most of silicon chip processing industries in order to pursue the low surface roughness in the process of lapping, often adopts the grinding fluid for silicon chip of the less abrasive material of particle diameter, has caused the decline of grinding rate like this.Open to disclose in the 2001-323254 communique the spy and have the silica lapping liquid that specified particle diameter distributes, this lapping liquid is selected for use and is close to monodispersed cataloid as abrasive material, and grinding rate is slow.No. 6143662 communique of United States Patent (USP) discloses a kind of Ginding process that uses little polishing particles and big polishing particles mixed slurry, and same grinding rate is low, and its grinding rate has only 30-100nm/min.
In order to improve silicon chip grinding speed, all different lapping liquids and grinding rate control scheme has also appearred in recent years.As in patent 03155318.4, reached than last two kinds of lapping liquids grinding rate faster by the control abrasive size, rapid rate can reach 230nm/min, but because the change of abrasive size causes the grinding silicon chip surface quality to descend.In patent 200510055710.5, proposed to adopt the Ginding process of preparing spherical SiO 2 abrasive material, reached grinding rate faster; maximum grinding rate can reach 600nm/min; but this kind method has increased production cost to the requirement height of abrasive material, is not easy to realize in large-scale production.
Therefore, design can be present urgent problem keeping preferably improving the method for monocrystalline silicon piece grinding rate under the silicon chip surface quality and the prerequisite than low production cost.
Summary of the invention
Main purpose of the present invention is to overcome the above-mentioned shortcoming that existing product exists, and a kind of silicon slice grinding rate control method is provided, and can effectively improve the grinding rate of grinding silicon chip, guarantee to grind the back silicon chip simultaneously and have surface quality preferably, promote production efficiency, reduce production costs.
The objective of the invention is to realize by following technical scheme.
Silicon slice grinding rate control method of the present invention, comprise and to be clamped on the abrasive disk of grinder by grinding silicon chip, lapping liquid is supplied to ground silicon chip surface, grinder is exerted pressure, and the abrasive disk rotation of control grinder, and to grinding on the grinding charge surface; It is characterized in that: described lapping liquid comprises abrasive material, bleeding agent, lubricant, PH conditioning agent, surfactant and deionized water; Grinding pressure on the described grinder is controlled at below the 50kPa, and control upper millstone rotating speed be below the 200rpm, the rotating speed of lower millstone is below the 200rpm.
Aforesaid silicon slice grinding rate control method is characterized in that: described grinding fluid for silicon chip comprises abrasive material, bleeding agent, lubricant, PH conditioning agent, surfactant and deionized water; The shared percentage by weight of various compositions is: abrasive material is 5.0% to 20.0%; The PH conditioning agent is 10% to 20%; Bleeding agent is 3% to 5%; Lubricant is 1% to 3%; Surfactant is 0.1% to 1.0%; Deionized water is a surplus; At ambient temperature, abrasive material, bleeding agent, lubricant, PH conditioning agent and surfactant are joined in the deionized water successively, stir.
Aforesaid silicon slice grinding rate control method is characterized in that: described abrasive material is silica (SiO
2), alundum (Al (Al
2O
3), ceria (CeO
2), titanium dioxide (TiO
2) or boron carbide; The particle size range of described abrasive material is 0 to 50 μ m.
Aforesaid silicon slice grinding rate control method is characterized in that: described bleeding agent is APEO (JFC) or phosphate.
Aforesaid silicon slice grinding rate control method is characterized in that: described lubricant is a glycerine.
Aforesaid silicon slice grinding rate control method is characterized in that: described PH conditioning agent is inorganic base, organic base or their combination.
Aforesaid silicon slice grinding rate control method is characterized in that: described inorganic base is potassium hydroxide or NaOH; Described organic base is a kind of in amine or the many hydroxyls polyamines or their combination; Described amine is ethylenediamine, TMAH; Many hydroxyls polyamines is triethanolamine, tetrahydroxyethy-lethylenediamine or hexahydroxy propyl group propane diamine.
Aforesaid silicon slice grinding rate control method is characterized in that: described surfactant is a nonionic surface active agent, and this nonionic surface active agent is AEO, alkylolamides or the mixture of the two; Described AEO is that the degree of polymerization is that 20 the AEO (O-20) or the degree of polymerization are 25 AEO (O-25); Described alkylolamides is a lauroyl monoethanolamine.
Aforesaid silicon slice grinding rate control method is characterized in that: described grinding pressure is preferably below the 25kPa, and the process of exerting pressure is at the uniform velocity to add to required pressure by 0 kPa, and remains under the steady pressure and grind.
Aforesaid silicon slice grinding rate control method is characterized in that: described grinder top lap rotating speed is preferably below the 100rpm, and following lap speed is preferably below the 100rpm.
The beneficial effect of silicon slice grinding rate control method of the present invention, it is by using the rational lapping liquid of configuration, adjust the method for grinding pressure and control upper millstone, lower millstone rotating speed, effectively improve the grinding rate of grinding silicon chip, guarantee to grind the back silicon chip simultaneously and have surface quality preferably, promote production efficiency, reduce production costs.
The specific embodiment
Silicon slice grinding rate control method of the present invention, comprise and to be clamped on the abrasive disk of grinder by grinding silicon chip, lapping liquid is supplied to ground silicon chip surface, grinder is exerted pressure, and the abrasive disk rotation of control grinder, and to grinding on the grinding charge surface; Its improvements are: it uses the lapping liquid that is made of abrasive material, bleeding agent, lubricant, PH conditioning agent, surfactant and deionized water, on grinder, silicon chip is ground, the control grinding pressure is below the 50kPa, and control upper millstone rotating speed be below the 200rpm, the rotating speed of lower millstone is below the 200rpm.
Silicon slice grinding rate control method of the present invention, wherein, grinding fluid for silicon chip comprises abrasive material, bleeding agent, lubricant, PH conditioning agent, surfactant and deionized water; The shared percentage by weight of various compositions is: abrasive material is 5.0% to 20.0%; The PH conditioning agent is 10% to 20%; Bleeding agent is 3% to 5%; Lubricant is 1% to 3%; Surfactant is 0.1% to 1.0%; Deionized water is a surplus.Abrasive material can be silica (SiO
2), alundum (Al (Al
2O
3), ceria (CeO
2), titanium dioxide (TiO
2) or boron carbide; The particle size range of this abrasive material is 0 to 50 μ m; Bleeding agent is APEO (JFC) or phosphate; Lubricant is a glycerine; The PH conditioning agent is inorganic base, organic base or their combination, and this inorganic base is potassium hydroxide or NaOH; This organic base be amine or or many hydroxyls polyamines in a kind of or their combination; Amine is ethylenediamine, TMAH; Many hydroxyls polyamines is triethanolamine, tetrahydroxyethy-lethylenediamine or hexahydroxy propyl group propane diamine; Surfactant is a nonionic surface active agent, and this nonionic surface active agent is AEO, alkylolamides or the mixture of the two; This AEO can be that the degree of polymerization is that 20 the AEO (O-20) or the degree of polymerization are 25 AEO (O-25); Alkylolamides can be a lauroyl monoethanolamine.
The preparation method of this lapping liquid is at ambient temperature, and abrasive material, bleeding agent, lubricant, PH conditioning agent and surfactant are joined in the deionized water successively, and stirring gets final product.
Silicon slice grinding rate control method of the present invention, its grinding pressure is preferably below the 25kPa, and the process of exerting pressure is at the uniform velocity to add to required pressure by 0kPa, and remains under the steady pressure and grind; Grinder top lap rotating speed is preferably below the 100rpm, and following lap speed is preferably below the 100rpm.
By lapping liquid of the present invention, and the grinding condition of setting, very fast grinding rate can be provided, and have surface quality preferably.Its principle is that the present invention reaches the fast effect of wetting solid particle and dispersion solid particle group by selecting suitable surfactant for use.In process of lapping, surfactant can be adsorbed on the surface of solids, and penetrates in the microcrack that grinds generation, makes that the solid mass particle in the process of lapping splits easy the branch, forms fragment, and grinding rate is accelerated; Surfactant can be adsorbed on the surface of solids and form the space barrier potential simultaneously, hinders the second adsorption of particle, and the surface is fully contacted with abrasive material, further improves grinding rate.That the lubricant that the present invention selects for use, bleeding agent can play is lubricated, the effect of protection lapped face.In addition, the present invention is controlled at grinding pressure in the reasonable range, can be under the situation that guarantees the silicon chip surface Grinding Quality, accelerate grinding rate, because generally speaking, grinding rate is to increase along with the increase of pressure, yet therefore the too fast mechanical damage that causes the grinding silicon chip surface easily of pressure need be controlled at pressure in the reasonable range; The present invention need control the process of exerting pressure, pressure is at the uniform velocity increased earlier, keep stable again, can make the abrasive uniformly dispersing so on the one hand, can remove the high point on the wafer on the other hand earlier, be applied to the every bit on the abrasive sheet with guaranteeing the pressure uniform balance again, make every bit that grinding rate faster all be arranged, thereby improved the overall rate of grinding, and reduced damage, improved surface quality.By the control lap speed, can control the intensity of mechanism, improve the surface quality of abrasive sheet.The present invention does not have special requirement to the particle size of abrasive material, and selected chemical reagent is comparatively common, and the preparation process of lapping liquid is simple, so low production cost.
Embodiment 1:
At first, the grinding fluid for silicon chip of configuration 2L.Take by weighing weight respectively and be 10% 10 μ m boron carbide abrasive materials, 3.5% phosphate, 2% glycerine, 12% NaOH, 0.4% hexahydroxy propyl group propane diamine, 0.5% the degree of polymerization and be 20 AEO, deionized water and be surplus, standby.
At ambient temperature, abrasive material, bleeding agent, lubricant, PH conditioning agent and the surfactant of above-mentioned percentage by weight joined in the deionized water successively, stirring gets final product.
During grinding, the grinding block that is stained with silicon chip is fixed on the abrasive disk with wax, above-mentioned lapping liquid is diluted with deionized water in the ratio of 1:100, supply to by the grinding silicon chip surface, grinder is exerted pressure, the abrasive disk that makes grinder simultaneously of exerting pressure rotates, thereby to being ground by the grinding silicon chip surface.The process of exerting pressure is at the uniform velocity to add to 10kPa by 0kPa, and remains under the pressure of 10kPa and carry out grinding operation, control top lap rotating speed 50rpm in the process of lapping, following lap speed 50rpm.Grind and adopt the single face grinder, the abrasive disk material is a graphite cast iron.
Experiment effect is analyzed: utilize above-mentioned lapping liquid, under these conditions, with constant rate of speed grinding silicon chip 15 minutes.Utilize micrometer caliper to measure the silicon wafer thickness that grinds front and back, divided by milling time, obtain removing the speed size and be 490nm/min, measuring surface roughness value with Zego contourgraph (the Newview6000 series of Zego company) is 1.3nm.
Embodiment 2:
At first, the grinding fluid for silicon chip of configuration 2L.Take by weighing weight respectively and be 12% 20 μ m alundum (Al abrasive materials, 5% APEO (JFC), 1.5% glycerine, 8% TMAH, 2.5% tetrahydroxyethy-lethylenediamine, 0.3% lauroyl monoethanolamine, deionized water and be surplus, standby.
The preparation of this lapping liquid is at ambient temperature, and abrasive material, bleeding agent, lubricant, PH conditioning agent and surfactant are joined in the deionized water successively, and stirring gets final product.
During grinding, the grinding block that is stained with silicon chip is adhered on the abrasive disk with wax, lapping liquid is diluted with the deionized water dilution in the ratio of 1:100, supply to the grinding charge surface, when grinder is exerted pressure, the abrasive disk of grinder is rotated, thereby to being ground by the grinding silicon chip surface.The process of exerting pressure is at the uniform velocity to add to 12kPa by 0kPa, and remains on the pressure grinding down of 12kPa, control top lap rotating speed 50rpm in the process of lapping, following lap speed 50rpm.Grind and adopt the single face grinder, the abrasive disk material is a graphite cast iron.
Experiment effect is analyzed: utilize above-mentioned lapping liquid, under these conditions, with constant rate of speed grinding silicon chip 15 minutes.By measuring the silicon wafer thickness before and after grinding, divided by milling time, obtain removing the speed size and be 520nm/min, measuring surface roughness value with Zego contourgraph (the Newview6000 series of Zego company) is 1.4nm.
The grinder model that the embodiment of the invention is used is UNIPOL1502 (brilliant company of Shenyang section).
The carbon number of fatty alcohol is 12 to 18 in the AEO that uses in the embodiment of the invention; The room temperature that relates to is 20-25 ℃.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, every foundation technical spirit of the present invention all still belongs in the scope of technical solution of the present invention any simple modification, equivalent variations and modification that above embodiment did.
Claims (10)
1. silicon slice grinding rate control method, comprise and to be clamped on the abrasive disk of grinder by grinding silicon chip, lapping liquid is supplied to ground silicon chip surface, grinder is exerted pressure, and the abrasive disk rotation of control grinder, and to grinding on the grinding charge surface; It is characterized in that: described lapping liquid comprises abrasive material, bleeding agent, lubricant, PH conditioning agent, surfactant and deionized water; Grinding pressure on the described grinder is controlled at below the 50kPa, and control upper millstone rotating speed be below the 200rpm, the rotating speed of lower millstone is below the 200rpm.
2. silicon slice grinding rate control method according to claim 1 is characterized in that: described grinding fluid for silicon chip comprises abrasive material, bleeding agent, lubricant, PH conditioning agent, surfactant and deionized water; The shared percentage by weight of various compositions is: abrasive material is 5.0% to 20.0%; The PH conditioning agent is 10% to 20%; Bleeding agent is 3% to 5%; Lubricant is 1% to 3%; Surfactant is 0.1% to 1.0%; Deionized water is a surplus; At ambient temperature, abrasive material, bleeding agent, lubricant, PH conditioning agent and surfactant are joined in the deionized water successively, stir.
3. silicon slice grinding rate control method according to claim 1 and 2 is characterized in that: described abrasive material is silica (SiO
2), alundum (Al (Al
2O
3), ceria (CeO
2), titanium dioxide (TiO
2) or boron carbide; The particle size range of described abrasive material is 10 to 50 μ m.
4. silicon slice grinding rate control method according to claim 1 and 2 is characterized in that: described bleeding agent is APEO (JFC) or phosphate.
5. silicon slice grinding rate control method according to claim 1 and 2 is characterized in that: described lubricant is a glycerine.
6. silicon slice grinding rate control method according to claim 1 and 2 is characterized in that: described PH conditioning agent is inorganic base, organic base or their combination.
7. silicon slice grinding rate control method according to claim 6 is characterized in that: described inorganic base is potassium hydroxide or NaOH; Described organic base is a kind of in amine or the many hydroxyls polyamines or their combination; Described amine is ethylenediamine, TMAH; Many hydroxyls polyamines is triethanolamine, tetrahydroxyethy-lethylenediamine or hexahydroxy propyl group propane diamine.
8. silicon slice grinding rate control method according to claim 1 and 2, it is characterized in that: described surfactant is a nonionic surface active agent, and this nonionic surface active agent is AEO, alkylolamides or the mixture of the two; Described AEO is that the degree of polymerization is that 20 the AEO (O-20) or the degree of polymerization are 25 AEO (O-25); Described alkylolamides is a lauroyl monoethanolamine.
9. silicon slice grinding rate control method according to claim 1 is characterized in that: described grinding pressure is preferably below the 25kPa, and the process of exerting pressure is at the uniform velocity to add to required pressure by 0kPa, and remains under the steady pressure and grind.
10. silicon slice grinding rate control method according to claim 1 is characterized in that: described grinder top lap rotating speed is preferably below the 100rpm, and following lap speed is preferably below the 100rpm.
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|---|---|---|---|
| CNA2007100587612A CN101367194A (en) | 2007-08-15 | 2007-08-15 | Silicon slice grinding rate control method |
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|---|---|---|---|
| CNA2007100587612A CN101367194A (en) | 2007-08-15 | 2007-08-15 | Silicon slice grinding rate control method |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103459089A (en) * | 2011-04-11 | 2013-12-18 | 旭硝子株式会社 | Polishing agent and polishing method |
| CN106914815A (en) * | 2015-12-24 | 2017-07-04 | 上海超硅半导体有限公司 | The Ginding process of semi-conductor silicon chip |
| CN109679757A (en) * | 2019-01-03 | 2019-04-26 | 长江存储科技有限责任公司 | Silicon wafer cutting protection liquid and preparation method thereof, method for cutting silicon chips |
| CN110872484A (en) * | 2018-08-30 | 2020-03-10 | 洛阳阿特斯光伏科技有限公司 | Diamond grinding fluid for diamond wire cutting silicon rod and preparation method and application thereof |
| CN116082961A (en) * | 2022-12-01 | 2023-05-09 | 宁波平恒电子材料有限公司 | Silicon wafer retaining ring grinding fluid and preparation method thereof |
-
2007
- 2007-08-15 CN CNA2007100587612A patent/CN101367194A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103459089A (en) * | 2011-04-11 | 2013-12-18 | 旭硝子株式会社 | Polishing agent and polishing method |
| CN106914815A (en) * | 2015-12-24 | 2017-07-04 | 上海超硅半导体有限公司 | The Ginding process of semi-conductor silicon chip |
| CN106914815B (en) * | 2015-12-24 | 2020-06-26 | 上海超硅半导体有限公司 | Grinding method of semiconductor silicon wafer |
| CN110872484A (en) * | 2018-08-30 | 2020-03-10 | 洛阳阿特斯光伏科技有限公司 | Diamond grinding fluid for diamond wire cutting silicon rod and preparation method and application thereof |
| CN110872484B (en) * | 2018-08-30 | 2021-07-02 | 洛阳阿特斯光伏科技有限公司 | Diamond grinding fluid for diamond wire cutting silicon rod and preparation method and application thereof |
| CN109679757A (en) * | 2019-01-03 | 2019-04-26 | 长江存储科技有限责任公司 | Silicon wafer cutting protection liquid and preparation method thereof, method for cutting silicon chips |
| CN116082961A (en) * | 2022-12-01 | 2023-05-09 | 宁波平恒电子材料有限公司 | Silicon wafer retaining ring grinding fluid and preparation method thereof |
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Open date: 20090218 |