CN101367189A - Silicon slice glazed surface scuffing control method - Google Patents
Silicon slice glazed surface scuffing control method Download PDFInfo
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- CN101367189A CN101367189A CNA2007100587491A CN200710058749A CN101367189A CN 101367189 A CN101367189 A CN 101367189A CN A2007100587491 A CNA2007100587491 A CN A2007100587491A CN 200710058749 A CN200710058749 A CN 200710058749A CN 101367189 A CN101367189 A CN 101367189A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 82
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 80
- 239000010703 silicon Substances 0.000 title claims abstract description 80
- 238000000034 method Methods 0.000 title claims abstract description 44
- 238000005498 polishing Methods 0.000 claims abstract description 143
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 26
- 239000004094 surface-active agent Substances 0.000 claims abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000008367 deionised water Substances 0.000 claims abstract description 16
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 16
- 239000000314 lubricant Substances 0.000 claims abstract description 13
- 239000012530 fluid Substances 0.000 claims description 32
- 239000002245 particle Substances 0.000 claims description 22
- 239000003082 abrasive agent Substances 0.000 claims description 20
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 16
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 15
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 14
- 238000006116 polymerization reaction Methods 0.000 claims description 14
- 230000000740 bleeding effect Effects 0.000 claims description 13
- 239000002738 chelating agent Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 230000003750 conditioning effect Effects 0.000 claims description 12
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical group [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- -1 hexahydroxy propyl group Chemical group 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- 235000011187 glycerol Nutrition 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 150000001412 amines Chemical class 0.000 claims description 6
- WGQKYBSKWIADBV-UHFFFAOYSA-N benzylamine Chemical compound NCC1=CC=CC=C1 WGQKYBSKWIADBV-UHFFFAOYSA-N 0.000 claims description 6
- 229960001484 edetic acid Drugs 0.000 claims description 6
- 150000007529 inorganic bases Chemical group 0.000 claims description 6
- 150000007530 organic bases Chemical class 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- WDVWEDIMFKEWMT-UHFFFAOYSA-N 1-amino-2-hydroxytetradecan-3-one Chemical compound CCCCCCCCCCCC(=O)C(O)CN WDVWEDIMFKEWMT-UHFFFAOYSA-N 0.000 claims description 5
- BYACHAOCSIPLCM-UHFFFAOYSA-N 2-[2-[bis(2-hydroxyethyl)amino]ethyl-(2-hydroxyethyl)amino]ethanol Chemical compound OCCN(CCO)CCN(CCO)CCO BYACHAOCSIPLCM-UHFFFAOYSA-N 0.000 claims description 5
- 229910019142 PO4 Inorganic materials 0.000 claims description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 5
- 239000010452 phosphate Substances 0.000 claims description 5
- GGHDAUPFEBTORZ-UHFFFAOYSA-N propane-1,1-diamine Chemical compound CCC(N)N GGHDAUPFEBTORZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 5
- 229910052580 B4C Inorganic materials 0.000 claims description 4
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 4
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 3
- 239000003109 Disodium ethylene diamine tetraacetate Substances 0.000 claims description 3
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 3
- 235000019301 disodium ethylene diamine tetraacetate Nutrition 0.000 claims description 3
- 125000003916 ethylene diamine group Chemical group 0.000 claims description 3
- JVKAWJASTRPFQY-UHFFFAOYSA-N n-(2-aminoethyl)hydroxylamine Chemical group NCCNO JVKAWJASTRPFQY-UHFFFAOYSA-N 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 229940008099 dimethicone Drugs 0.000 claims 1
- 239000004205 dimethyl polysiloxane Substances 0.000 claims 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims 1
- 229920002545 silicone oil Polymers 0.000 claims 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims 1
- 229920002554 vinyl polymer Polymers 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 5
- 238000000227 grinding Methods 0.000 abstract description 2
- 241000212892 Chelon Species 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 6
- 238000007517 polishing process Methods 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000005303 weighing Methods 0.000 description 4
- 229910001141 Ductile iron Inorganic materials 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011268 mixed slurry Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention provides a method for controlling the scuffing of the polishing surface of a silicon chip. The method comprises the following steps: the silicon chips are pasted on polishing discs of a polishing machine; the polishing discs are fixed on a polishing head of the polishing machine; the pressure of the polishing machine and the rotational speeds of the upper polishing disc and the lower polishing disc are controlled; and polishing solution is injected to the polishing discs and between the silicon chips. The method has the improved aspects: the polishing solution comprises a grinding material, a penetrating agent, a lubricant, a PH regulator, a surfactant, a chelon and deionized water; the pressure of the polishing machine is controlled below 50 kilopascal; the rotational speed of the upper polishing disc is controlled below 60 revolutions per minute; and the rotational speed of the lower polishing disc is controlled below 60 revolutions per minute. The method can effectively reduce the scuffing of the surface of the polishing silicon chip, simultaneously ensure high removing velocity of polishing the silicon chip, has low production cost and is suitable for the requirement of scale production.
Description
Technical field
The present invention relates to the silicon chip processing method, relate in particular to and a kind of the integrated circuit substrate is processed polishing with monocrystalline silicon piece, and can reduce the control method of the silicon slice glazed surface scuffing of its surface tear degree.
Background technology
Silicon is to have diamond crystal structures, with the hard brittle material of covalent bonds, is a kind of good semi-conducting material between atom, and what constitute the IC semiconductor chip at present all is silicon wafer (silicon chip) more than 90%.For printed IC on silicon chip, and tight with other combination of elements, the surface of silicon chip must be straight, and particularly the degree of integration along with integrated circuit improves constantly, to the stricter requirement of requirement proposition of silicon chip surface glacing flatness and roughness.
After polishing was the silicon chip section, the machining second time of behind grinding step its surface being carried out also was also to be basic working procedure necessary in the silicon chip process technology.The purpose of polishing is in order to reduce damage layer and the surface tear that silicon chip surface occurs in process of lapping, makes Surface Machining damage layer reach consistent and control surface scratches the length depth, makes it in the chemical attack process, and surface corrosion speed reaches uniformity.The polishing of silicon chip comprises light throwing, middle throwing, heavily throwing and water throwing, when polishing usually, at first polished silicon chip is sticked on the polishing machine polishing disk, then polishing disk is fixed on the polishing machine rubbing head, adjust and control the suitable pressure of polishing machine, the suitable rotating speed of polishing disk and the polishing fluid that between polishing disk and silicon chip, injects reasonable flow up and down again, then silicon chip is polished.
In the preparation process of very large scale integration, silicon chip surface polishing degree is one of greatest factor that influences electronic component quality and reliability, and improves the silicon wafer polishing product percent of pass, and the control glazed surface scuffing is vital.At present, most of practitioners remove speed in order to pursue in the polishing process, often adopt the polishing fluid of selecting the big abrasive material preparation of particle diameter, have caused the increase of polishing damage layer and the increase of surface tear quantity.Open to disclose in the 2001-323254 communique the spy and have the alundum (Al polishing fluid that specified particle diameter distributes, this polishing fluid is selected for use and is close to monodispersed colloid boron carbide as abrasive material, and there be a large amount of the scuffing in polishing back silicon chip surface.No. 6143662 communique of United States Patent (USP) discloses a kind of finishing method that uses granule and bulky grain mixed slurry, makes polishing back silicon chip surface have a large amount of the scuffing equally.
In order to improve the silicon wafer polishing quality, reduce the scuffing of silicon chip surface, all different polishing fluids and the control scheme of surface of polished scuffing have also appearred in recent years.As in patent 03155318.4, reached the polishing littler by the control abrasive size and scratched, but because the change of abrasive size has caused the removal speed of polished silicon slice to descend than last two kinds of polishing fluids.In patent 200510055710.5, proposed to adopt the finishing method of preparing spherical SiO 2 abrasive material, though reached the effect that less polishing scratches, this kind method is higher to the abrasive material performance requirement, increased production cost, in large-scale production, be not easy to realize.
Therefore,, be present urgent problem how keeping design a kind of method that reduces monocrystalline silicon piece polishing scuffing under the higher removal speed and prerequisite than low production cost.
Summary of the invention
Main purpose of the present invention is to overcome the above-mentioned shortcoming that existing product exists, and provide a kind of control method of silicon slice glazed surface scuffing, it has improved the process conditions of silicon wafer polishing, can effectively reduce the scuffing on polished silicon slice surface, simultaneously can guarantee that silicon wafer polishing has higher removal speed, and production cost is lower, is fit to the large-scale production needs.
The objective of the invention is to realize by following technical scheme.
The control method of silicon slice glazed surface scuffing of the present invention, be included in silicon chip is sticked on the polishing machine polishing disk, then polishing disk is fixed on the polishing machine rubbing head, the pressure and the rotating speed of polishing disk up and down of control polishing machine, and between polishing disk and silicon chip, inject polishing fluid; It is characterized in that described polishing fluid comprises abrasive material, bleeding agent, lubricant, PH conditioning agent, surfactant, chelating agent and deionized water; The pressure of described polishing machine is controlled at below the 50kPa, and the rotating speed of last polishing disk is controlled at below the 60rpm, and the rotating speed of following polishing disk is controlled at below the 60rpm.
The control method of aforesaid silicon slice glazed surface scuffing, it is characterized in that, the shared percentage by weight of various compositions is in the described polishing fluid: abrasive material is 5.0% to 20.0%, bleeding agent is 3% to 5%, lubricant is 0.5% to 1.0%, and the PH conditioning agent is 10% to 20%, and surfactant is 0.1% to 1.0%, chelating agent is 1% to 3%, and deionized water is a surplus; At ambient temperature, in deionized water, add abrasive material, bleeding agent, lubricant, PH conditioning agent, surfactant and chelating agent successively, stir, make polishing fluid.
The control method of aforesaid silicon slice glazed surface scuffing is characterized in that, described abrasive material is that particle diameter is the silica (SiO of 70 to 90 nanometers
2), particle diameter is the alundum (Al (Al of 150 to 200 nanometers
2O
3), particle diameter is the ceria (CeO of 100-150 nanometer
2), particle diameter is the titanium dioxide (TiO of 100 to 150 nanometers
2) or particle diameter be the boron carbide of 150 to 200 nanometers; Described bleeding agent is APEO (JFC) or phosphate; Described PH conditioning agent is inorganic base or organic base; Described chelating agent is a kind of in ethylenediamine tetra-acetic acid (EDTA), disodium ethylene diamine tetraacetate, azanol and the amine or their combination; Described lubricant is a glycerine; Described surfactant is a nonionic surface active agent.
The control method of aforesaid silicon slice glazed surface scuffing is characterized in that, described azanol is triethanolamine, tetrahydroxyethy-lethylenediamine or hexahydroxy propyl group propane diamine; Described amine is ethylenediamine or TMAH.
The control method of aforesaid silicon slice glazed surface scuffing is characterised in that, described nonionic surface active agent is AEO, alkylolamides or the mixture of the two; Described AEO is that the degree of polymerization is that 15 NPE, the degree of polymerization are that 20 OPEO (0-20), the degree of polymerization are that 25 the OPEO (0-25) or the degree of polymerization are 40 OPEO (0-40); Described alkylolamides is lauroyl monoethanolamine, dihydroxy ethyl tridecanoyl amine or dodecanolyacylamine.
The control method of aforesaid silicon slice glazed surface scuffing is characterized in that, described inorganic base is potassium hydroxide, NaOH or ammoniacal liquor; Described organic base is hydroxy-ethylenediamine, benzylamine, monoethanolamine or TMAH.
The control method of aforesaid silicon slice glazed surface scuffing is characterized in that, the pressure of described polishing machine is preferably below the 25kPa, and it is at the uniform velocity to add to required pressure by 0 pressure that pressure applies process, and polishes under steady pressure.
The beneficial effect of the control method of silicon slice glazed surface scuffing of the present invention, utilize the polishing fluid of scientific and reasonable prescription, and adjust the control polishing machine and under pressure that is fit to and speed conditions, carry out operation, effectively reduce the scuffing of silicon chip surface, surface quality and polishing speed preferably faster are provided, and can increase production cost.
The specific embodiment
The control method of silicon slice glazed surface scuffing of the present invention, be included in silicon chip is sticked on the polishing machine polishing disk, then polishing disk is fixed on the polishing machine rubbing head, the pressure and the rotating speed of polishing disk up and down of control polishing machine, and between polishing disk and silicon chip, inject polishing fluid; Its improvements are that described polishing fluid comprises abrasive material, bleeding agent, lubricant, PH conditioning agent, surfactant, chelating agent and deionized water; The pressure of described polishing machine is controlled at below the 50kPa, and the rotating speed of last polishing disk is controlled at below the 60rpm, and the rotating speed of following polishing disk is controlled at below the 60rpm.
The control method of silicon slice glazed surface scuffing of the present invention, it is characterized in that, the shared percentage by weight of various compositions is in the described polishing fluid: abrasive material is 5.0% to 20.0%, bleeding agent is 3% to 5%, lubricant is 0.5% to 1.0%, and the PH conditioning agent is 10% to 20%, and surfactant is 0.1% to 1.0%, chelating agent is 1% to 3%, and deionized water is a surplus; At ambient temperature, in deionized water, add abrasive material, bleeding agent, lubricant, PH conditioning agent, surfactant and chelating agent successively, stir, make polishing fluid.
The control method of silicon slice glazed surface scuffing of the present invention is characterized in that, described abrasive material is that particle diameter is the silica (SiO of 70 to 90 nanometers
2), particle diameter is the alundum (Al (Al of 150 to 200 nanometers
2O
3), particle diameter is the ceria (CeO of 100-150 nanometer
2), particle diameter is the titanium dioxide (TiO of 100 to 150 nanometers
2) or particle diameter be the boron carbide of 150 to 200 nanometers; Described bleeding agent is APEO (JFC) or phosphate; Described PH conditioning agent is inorganic base or organic base; Described chelating agent is a kind of in ethylenediamine tetra-acetic acid (EDTA), disodium ethylene diamine tetraacetate, azanol and the amine or their combination; Described lubricant is a glycerine; Described surfactant is a nonionic surface active agent.Wherein, described azanol is triethanolamine, tetrahydroxyethy-lethylenediamine or hexahydroxy propyl group propane diamine; Described amine is ethylenediamine or TMAH; Described nonionic surface active agent is AEO, alkylolamides or the mixture of the two; Described AEO is that the degree of polymerization is that 15 NPE, the degree of polymerization are that 20 OPEO (0-20), the degree of polymerization are that 25 the OPEO (0-25) or the degree of polymerization are 40 OPEO (0-40); Described alkylolamides is lauroyl monoethanolamine, dihydroxy ethyl tridecanoyl amine or dodecanolyacylamine; Described inorganic base is potassium hydroxide, NaOH or ammoniacal liquor; Described organic base is hydroxy-ethylenediamine, benzylamine, monoethanolamine or TMAH.
The control method of silicon slice glazed surface scuffing of the present invention, the pressure of its polishing machine is preferably below the 25kPa, and it is at the uniform velocity to add to required pressure by 0 pressure that pressure applies process, and polishes under steady pressure.
The control method of silicon slice glazed surface scuffing of the present invention, it mainly is by improving the process conditions of silicon wafer polishing, reaching the purpose that reduces the surface tear in the silicon wafer polishing technology.At first, prescription to polishing fluid improves, the abrasive material of selecting for use in the polishing fluid is a nano-size abrasive materials, compare with conventional abrasives, it has that particle diameter is little, fineness is high, granule stability is good and characteristics such as particle is firm, therefore the surface roughness after polishing is the end more, and can effectively reduce the appearance of surface tear; The effect of adding chelating agent in polishing fluid is the heavy metal ion that chelating exerts an influence to the silicon chip following process, the effect of adding bleeding agent is to increase infiltration and the circulation of polishing fluid in polishing cloth, makes the mass exchange effect of polishing fluid in the polishing process better; Select for use AEO or alkylolamides as nonionic surface active agent in the polishing fluid of the present invention; can use wherein a kind of among both during use separately; or the mixture of the two arbitrary proportion; these two kinds of surfactants can play the effect of the cut of effective minimizing surface of polished; mainly be because the two plays the effect of wetting particle in polishing process; they can be adsorbed on the surface of solids in polishing process; the protection silicon chip surface also reduces surface stress; make that the silicon chip surface in the polishing process is not easy to crack; form fragment, scratch thereby reduce surface of polished.Secondly, the polishing machine pressure reasonable in design and the rotating speed of polishing disk, the polishing function reaches the service efficiency of valency under this pressure and rotating speed, scratches thereby reduce.
The polishing machine that uses in the control method of silicon slice glazed surface scuffing of the present invention is existing commercially available prod, and such as being Twp-sided polishing machine, the material of its polishing disk can be nodular cast iron, also can be other, so no longer give unnecessary details.In addition, method of the present invention go for silicon chip light throwing, middle throwing, heavily throw in the technology.
The invention has the advantages that, utilize the polishing fluid of scientific and reasonable prescription, and adjust the control polishing machine and under pressure that is fit to and speed conditions, carry out operation, effectively reduce the scuffing of silicon chip surface, surface quality and polishing speed preferably faster are provided, and do not increase production cost.
Embodiment 1:
Select Lanzhou-Xinjiang 815B Twp-sided polishing machine for use, the material of its polishing disk is a nodular cast iron.
1 kilogram of preparation silicon slice polishing liquid.
Take by weighing 10% abrasive silica of preparation polishing fluid weight respectively, the particle diameter of this silica is 70 nanometers, 12% NaOH, 0.5% lauroyl monoethanolamine, 3.5% phosphate, 1% glycerine, 2% hexahydroxy propyl group propane diamine, surplus is a deionized water.At ambient temperature, add above-mentioned abrasive silica, NaOH, lauroyl monoethanolamine, phosphate, glycerine and the hexahydroxy propyl group propane diamine that takes by weighing successively respectively in deionized water, the back that stirs is standby.
During polishing, polished silicon chip is sticked on the polishing disk of polishing machine, the polishing disk that is stained with silicon chip is fixed on the machine ramming head, adjust polishing machine pressure and rise to 10kPa by 0 pressure equably, and be controlled at about 10kPa, control upthrow CD speed is 50rpm, and following polishing disk rotating speed also is 50rpm, and regulating the polishing fluid flow is 2.5 liters/minute.
Experiment effect is analyzed: utilizes above-mentioned polishing fluid, press 1:100 with deionized water and dilute, under these conditions, with constant rate of speed polished silicon slice 15 minutes.Detect silicon chip surface by 100 power microscopes, measurement result does not have scuffing, measures the silicon wafer thickness of polishing front and back, divided by polishing time, obtains removing the speed size and is 0.9nm/min, and surface roughness value is 0.015nm.
Use existing glossing, the removal speed behind the silicon wafer polishing is generally about 0.5nm/min, and surface roughness value is about 0.03nm.
Embodiment 2:
Select Lanzhou-Xinjiang 815B Twp-sided polishing machine for use, the material of its polishing disk is a nodular cast iron.
2 kilograms of preparation silicon slice polishing liquids.
Take by weighing 12% alundum (Al abrasive material of preparation polishing fluid weight respectively, the particle diameter of this alundum (Al is 200 nanometers, 10% TMAH, 0.3% the degree of polymerization is 25 OPEO, 5% APEO (JFC), 0.7% glycerine, 1.5% tetrahydroxyethy-lethylenediamine, surplus is a deionized water.
At ambient temperature, add above-mentioned alumina abrasive, TMAH, the degree of polymerization take by weighing successively respectively and be 25 OPEO, APEO, glycerine and tetrahydroxyethy-lethylenediamine in deionized water, the back that stirs is standby.
During polishing, polished silicon chip is sticked on the polishing disk, the polishing disk that is stained with silicon chip is fixed on the polishing machine ramming head, adjust polishing machine pressure and rise to 10kPa by 0 pressure equably, and be controlled at about 10kPa, control upthrow CD speed is 50rpm, and following polishing disk rotating speed also is 50rpm, and the polishing fluid flow is 2.5 liters/minute.
Experiment effect is analyzed: utilizes above-mentioned polishing fluid, press 1:100 with deionized water and dilute, under these conditions, with constant rate of speed polished silicon slice 15 minutes.Detect silicon chip surface by 100 power microscopes, measurement result does not have scuffing, measures the silicon wafer thickness of polishing front and back, divided by polishing time, obtains removing the speed size and is 1.1nm/min, and surface roughness value is 0.02nm.
Use existing glossing, the removal speed behind the silicon wafer polishing is generally about 0.5nm/min, and surface roughness value is about 0.03nm.
The room temperature that the present invention relates to is 20-25 ℃.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, every foundation technical spirit of the present invention all still belongs in the scope of technical solution of the present invention any simple modification, equivalent variations and modification that above embodiment did.
Claims (7)
1. the control method of a silicon slice glazed surface scuffing, be included in silicon chip is sticked on the polishing machine polishing disk, then polishing disk is fixed on the polishing machine rubbing head, the pressure and the rotating speed of polishing disk up and down of control polishing machine, and between polishing disk and silicon chip, inject polishing fluid; It is characterized in that described polishing fluid comprises abrasive material, bleeding agent, lubricant, PH conditioning agent, surfactant, chelating agent and deionized water; The pressure of described polishing machine is controlled at below the 50kPa, and the rotating speed of last polishing disk is controlled at below the 60rpm, and the rotating speed of following polishing disk is controlled at below the 60rpm.
2. the control method of silicon slice glazed surface scuffing according to claim 1, it is characterized in that, the shared percentage by weight of various compositions is in the described polishing fluid: abrasive material is 5.0% to 20.0%, bleeding agent is 3% to 5%, lubricant is 0.5% to 1.0%, and the PH conditioning agent is 10% to 20%, and surfactant is 0.1% to 1.0%, chelating agent is 1% to 3%, and deionized water is a surplus; At ambient temperature, in deionized water, add abrasive material, bleeding agent, lubricant, PH conditioning agent, surfactant and chelating agent successively, stir, make polishing fluid.
3. the control method of silicon slice glazed surface scuffing according to claim 1 and 2 is characterized in that, described abrasive material is that particle diameter is the silica (SiO of 70 to 90 nanometers
2), particle diameter is the alundum (Al (Al of 150 to 200 nanometers
2O
3), particle diameter is the ceria (CeO of 100-150 nanometer
2), particle diameter is the titanium dioxide (TiO of 100 to 150 nanometers
2) or particle diameter be the boron carbide of 150 to 200 nanometers; Described bleeding agent is APEO (JFC) or phosphate; Described PH conditioning agent is inorganic base or organic base; Described chelating agent is a kind of in ethylenediamine tetra-acetic acid (EDTA), disodium ethylene diamine tetraacetate, azanol and the amine or their combination; Described lubricant is a kind of in glycerine, dimethicone, the vinyl silicone oil or their combination; Described surfactant is a nonionic surface active agent.
4. the control method of silicon slice glazed surface scuffing according to claim 3 is characterized in that, described azanol is triethanolamine, tetrahydroxyethy-lethylenediamine or hexahydroxy propyl group propane diamine; Described amine is ethylenediamine or TMAH.
5. the control method of silicon slice glazed surface scuffing according to claim 3 is characterized in that, described nonionic surface active agent is AEO, alkylolamides or the mixture of the two; Described AEO is that the degree of polymerization is that 15 NPE, the degree of polymerization are that 20 OPEO, the degree of polymerization are that 25 the OPEO or the degree of polymerization are 40 OPEO; Described alkylolamides is lauroyl monoethanolamine, dihydroxy ethyl tridecanoyl amine or dodecanolyacylamine.
6. the control method of silicon slice glazed surface scuffing according to claim 3 is characterized in that, described inorganic base is potassium hydroxide, NaOH or ammoniacal liquor; Described organic base is hydroxy-ethylenediamine, benzylamine, monoethanolamine or TMAH.
7. the control method of silicon slice glazed surface scuffing according to claim 1 is characterized in that, the pressure of described polishing machine is preferably below the 25kPa, and it is at the uniform velocity to add to required pressure by 0 pressure that pressure applies process, and polishes under steady pressure.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100587491A CN101367189A (en) | 2007-08-15 | 2007-08-15 | Silicon slice glazed surface scuffing control method |
| PCT/CN2007/002754 WO2009021364A1 (en) | 2007-08-15 | 2007-09-18 | The method of controlling scratching of the polished surface of silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100587491A CN101367189A (en) | 2007-08-15 | 2007-08-15 | Silicon slice glazed surface scuffing control method |
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| WO (1) | WO2009021364A1 (en) |
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