CN111423819A - Polishing solution and preparation method thereof - Google Patents
Polishing solution and preparation method thereof Download PDFInfo
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- CN111423819A CN111423819A CN202010302787.2A CN202010302787A CN111423819A CN 111423819 A CN111423819 A CN 111423819A CN 202010302787 A CN202010302787 A CN 202010302787A CN 111423819 A CN111423819 A CN 111423819A
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
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Abstract
The invention provides a polishing solution and a preparation method thereof. The polishing solution contains an abrasive, an oxidizing agent, a lubricant, a chelating agent and water. The polishing solution has the advantages of high polishing rate and strong universality.
Description
Technical Field
The invention relates to the technical field of semiconductor material polishing, in particular to polishing solution suitable for III-V semiconductor materials and a preparation method thereof.
Background
In 1952, Welker et al discovered compounds (i.e., semiconductors) formed from group III and group V elements. Some semiconductor materials, such as gallium arsenide (GaAs), indium phosphide (InP), gallium nitride (GaN), gallium phosphide (GaP), etc., have superior characteristics that germanium (Ge) and silicon (Si) do not have, and have wide applications in the fields of microwave and optoelectronic devices. Thus, this attracts a wide attention to semiconductor materials.
GaAs is the most important and versatile semiconductor material, and is currently the most mature and productive semiconductor material. GaAs has the advantages of high electron mobility, large forbidden band width, high working temperature, good photoelectric property, low intrinsic carrier concentration, heat resistance, good radiation resistance and the like, is widely applied to the aspects of a microwave diode, an integrated circuit, a photodetector, a phased array radar, a high-efficiency solar cell and the like, and plays a key role in the fields of mobile phones, optical fiber communication, automobile automation, military aviation and the like.
InP has the advantages of high electron drift speed, obvious negative resistance effect and the like. Compared with GaAs, InP also has the advantages of high conversion efficiency, high limit ratio of working frequency, high thermal conductivity, good noise characteristic, high electron mobility and the like. Therefore, the InP can be used for manufacturing photoelectric devices and photoelectric integrated circuits, and is an ideal substrate material for microwave devices and high-speed and high-frequency devices. When used as a solar cell material, InP has not only high conversion efficiency but also superior radiation resistance to GaAs, Si, and the like, and therefore, InP is particularly suitable for space applications.
GaN has the properties of wide direct band gap, strong atomic bond, high thermal conductivity, strong anti-irradiation capability and the like, and can be used not only as a short-wavelength photoelectron material, but also as a replacement material of a high-temperature semiconductor device. In addition, GaN has better luminous performance, can be used as a mainstream material of blue light and white light luminescent devices, and has replaced silicon carbide in the field of blue light luminescence. Meanwhile, in the field of microwave power amplification, the output microwave power of GaN is higher than that of GaAs and Si by more than one order of magnitude.
The light emitting phenomenon of GaP is the best studied in indirect transition materials, red and green common L ED mainly supplied in the market is mainly prepared by GaP as a substrate material, and L ED made of GaP has great significance in saving energy, reducing pollution, improving living environment of people and the like.
With the continuous development and maturation of material technology, new materials are formed in various ways, and the InGaN alloy, the InGaNAlGaN double heterojunction L ED, the InGaN single quantum well L ED, and the InGaN multiple quantum well L D are successively developed.
Obtaining high quality wafers is a prerequisite for the above applications of various semiconductor materials. The wafer is obtained by processing a crystal material by wire cutting, grinding, polishing, cleaning and the like. Polishing is a critical process for obtaining high precision wafers. Currently, the wafer is polished by a chemical mechanical polishing process. Specifically, the chemical etching and mechanical grinding synergistic effect acts on the surface of the wafer to solve the defects of surface damage layer, surface unevenness and the like caused by the previous process, and the surface stress and roughness are obviously reduced, so that an atomic-scale surface is obtained to facilitate the development of the subsequent process.
The polishing liquid is a key element affecting the polishing effect. At present, the polishing liquid for semiconductor materials is basically imported. This is mainly because domestic polishing solutions have the defects of low polishing rate, easy formation of apparent defects, ion contamination and the like. Moreover, domestic polishing solutions also have poor versatility, and one polishing solution is only suitable for polishing a wafer made of a certain material.
Disclosure of Invention
In view of the above problems, the present invention provides a polishing solution and a preparation method thereof, and aims to solve the technical problems of low polishing rate and poor versatility of the polishing solution in the prior art to a certain extent.
In order to solve the above problems, the present invention provides a polishing liquid comprising: abrasive, oxidizing agent, lubricant, chelating agent, and water.
In some embodiments, the polishing solution contains 10 to 20% by weight of an abrasive, 1 to 10% by weight of an oxidizing agent, 1 to 5% by weight of a lubricant, 0.001 to 1% by weight of a chelating agent, and 60 to 85% by weight of water.
In some embodiments, the abrasive is at least one of alumina, ceria, silica, silicon carbide, and diamond; and/or
The grain size of the abrasive is 10-100 nm; and/or
The concentration of the abrasive is 5-50%.
In some embodiments, the oxidizing agent is at least one of hydrogen peroxide, peracetic acid, sodium percarbonate, ammonium persulfate, sodium perborate, ferric nitrate, potassium iodate, aluminum trichloride, sodium hypochlorite, potassium permanganate, hypobromous acid, and hypoiodic acid; and/or
The lubricant is at least one of ethylene glycol, propylene glycol, butanediol, glycerol, diethylene glycol, dipropylene glycol and dibutylene glycol; and/or
The chelating agent is at least one of nitrilotriacetic acid, benzotriazole, benzimidazole, benzothiazole, ethylene diamine tetraacetic acid and salts thereof, diethylene triamine pentaacetic acid and salts thereof, malic acid and salts thereof, tartaric acid and salts thereof, succinic acid and salts thereof, malonic acid and salts thereof, succinic acid and salts thereof, oxalic acid, sodium tripolyphosphate, dihydroxyethyl glycine and tetrasodium iminodisuccinate.
In some embodiments, the polishing solution further contains 0.01 to 2% by mass of a pH adjuster, wherein the pH adjuster is at least one of sulfuric acid and weak alkali salts thereof, nitric acid and weak alkali salts thereof, hydrochloric acid and weak alkali salts thereof, sodium hydroxide and weak acid salts thereof, and potassium hydroxide and weak acid salts thereof; and/or
The pH value of the polishing solution is 10-12.
In some embodiments, the polishing solution further comprises 0.001-1% by mass of a bactericide which is at least one of 1.2-benzisothiazolin-3-one, octylhexylglycerin, iodopropynyl butyl carbamate, 1.3-dimethylol-5.5-dimethylcaprolactam, 5-chloro-2-methyl-4-isothiazolinone, diazoimidazolidinyl urea, ethylene glycol monophenyl ether, potassium sorbate, methylparaben, sodium dehydroacetate, and calcium propionate; and/or
The polishing solution also contains a dispersant with the mass percent content of 0.1-2%, and the dispersant is a hyper-dispersant; and/or
The polishing solution further comprises a surfactant with the mass percent content of 0.01-2%, wherein the surfactant is at least one of tween, span, fatty alcohol-polyoxyethylene ether sodium sulfate, alkylphenol ethoxylate, lauryl sodium sulfate, dodecyl dimethyl benzyl ammonium chloride, 3-sulfopropyl tetradecyl dimethyl betaine and cocamidopropyl betaine.
The invention also provides a preparation method of the polishing solution, which comprises the following steps:
providing an abrasive;
adding water into the grinding material to obtain a grinding material concentrated solution; and
and diluting the abrasive concentrated solution by using water, and adding an oxidant, a lubricant and a chelating agent into the diluted abrasive concentrated solution to prepare the polishing solution.
In some embodiments, the abrasive concentrate has an abrasive to water mass ratio of 1: 1.5-2.5; and/or
The abrasive is at least one of aluminum oxide, cerium oxide, silicon dioxide, silicon carbide and diamond; and/or
The grain size of the abrasive is 10-100 nm; and/or
The concentration of the abrasive is 5-50%; and/or
The mass ratio of the grinding material to the water in the diluted grinding material concentrated solution is 1: 3 to 8.
In some embodiments, the method for preparing the polishing solution further comprises the step of adding at least one of a pH adjuster, a bactericide, a surfactant, and a dispersant to the diluted abrasive concentrated solution.
In some embodiments, the pH adjusting agent is at least one of sulfuric acid and weak alkali salts thereof, nitric acid and weak alkali salts thereof, hydrochloric acid and weak alkali salts thereof, sodium hydroxide and weak acid salts thereof, potassium hydroxide and weak acid salts thereof; and/or
The pH value of the polishing solution is 10-12; and/or
The bactericide is at least one of 1, 2-benzisothiazolin-3-one, octyl hexyl glycerol, iodopropynyl butyl carbamate, 1, 3-dimethylol-5, 5-dimethylcaprolactam, 5-chloro-2-methyl-4-isothiazolinone, diazolidinyl urea, ethylene glycol monophenyl ether, potassium sorbate, nipagin methyl ester, sodium dehydroacetate and calcium propionate; and/or
The dispersant is a hyper-dispersant; and/or
The surfactant is at least one of tween, span, fatty alcohol-polyoxyethylene ether sodium sulfate, alkylphenol polyoxyethylene, sodium dodecyl sulfate, dodecyl dimethyl benzyl ammonium chloride, 3-sulfopropyl tetradecyl dimethyl betaine and cocamidopropyl betaine.
In the technical scheme of the invention, the polishing solution contains an abrasive, a chelating agent, an oxidizing agent, a lubricant and water. The abrasive can be used to polish the surface of a substrate. The chelating agent can reduce ion staining and increase the polishing rate. The oxidizing agent can enhance chemical etching of the substrate surface to enhance polishing effect and polishing rate. The lubricant is useful for reducing surface scratches that may result to improve polishing performance. The abrasive, the chelating agent, the oxidant and the lubricant act together, so that the polishing rate of the surface of the base material can be improved, the universality is high, and the base materials made of different materials can be polished.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.
FIG. 1 is a graph illustrating the relationship between the abrasive concentration and the removal rate according to an embodiment of the present invention.
FIG. 2 is a graph showing the relationship between the amount of oxidant added and the removal rate in an embodiment of the present invention.
FIG. 3 is a graph illustrating the effect of the process on polishing in one embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making an invasive task, are within the scope of the present invention.
It will be understood that the terms "comprises" and/or "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It is also to be understood that the terminology used in the description of the embodiments of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the embodiments of the invention. As used in the description of the embodiments of the present invention and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
The invention provides a polishing solution. The polishing solution contains: abrasive, oxidant, lubricant, chelating agent and water.
In some embodiments, the water is ultrapure water.
In the technical scheme of the invention, the polishing solution contains an abrasive, a chelating agent, an oxidizing agent, a lubricant and water. The abrasive can be used to polish the surface of a substrate. The chelating agent can reduce ion staining and increase the polishing rate. The oxidizing agent can enhance chemical etching of the substrate surface to enhance polishing effect and polishing rate. The lubricant is useful for reducing surface scratches that may result to improve polishing performance. The abrasive, the chelating agent, the oxidant and the lubricant act together, so that the polishing rate of the surface of the base material can be improved, the universality is high, and the base materials made of different materials can be polished.
It is understood that the substrate may be a III-V material. Wherein the base material contains two or more elements selected from Al, Ga, In, N, P and As, such As gallium arsenide (GaAs), indium phosphide (InP), gallium nitride (GaN), gallium phosphide (GaP), etc.
In some embodiments, the polishing solution contains 10 to 20% by mass of an abrasive, 1 to 10% by mass of an oxidizing agent, 1 to 5% by mass of a lubricant, 0.001 to 1% by mass of a chelating agent, and 60 to 85% by mass of water.
It is understood that the abrasive may be present in an amount of 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19%, or 20% by mass.
It is understood that the oxidant may be present in an amount of 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, or 10% by mass.
It is understood that the lubricant may be present in an amount of 1%, 2%, 3%, 4%, or 5% by mass.
It is understood that the chelating agent may be present in an amount of 0.001%, 0.002%, 0.003%, 0.004%, 0.005%, 0.006%, 0.007%, 0.008%, 0.009%, 0.01%, 0.02%, 0.03%, 0.04%, 0.05%, 0.06%, 0.07%, 0.08%, 0.09%, 0.1%, 0.2%, 0.3%, 0.4%, 0.5%, 0.6%, 0.7%, 0.8%, 0.9%, or 1% by mass.
It is understood that the water may be present in an amount of 60%, 65%, 70%, 75%, 80%, or 85% by mass.
In the technical scheme of the invention, the polishing solution contains 10-20% by mass of abrasive, 1-10% by mass of oxidant, 1-5% by mass of lubricant, 0.001-1% by mass of chelating agent and 60-85% by mass of water. The mass percentage of each component in the polishing solution can be adjusted according to actual requirements so as to polish substrates made of different materials.
In some embodiments, the abrasive is at least one of alumina, ceria, silica, silicon carbide, and diamond.
In some embodiments, the abrasive has a particle size of 10 to 100 nm. The grinding material with centralized particle size distribution and excellent appearance is preferred.
In some embodiments, the abrasive has a particle size of 30 to 60 nm.
It will be appreciated that the abrasive may have a particle size of 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, 50nm, 55nm, 60nm, 65nm, 70nm, 75nm, 80nm, 85nm, 90nm, 95nm, or 100 nm.
In some embodiments, the abrasive has a concentration of 5 to 50%.
In some embodiments, the abrasive has a concentration of 10 to 20%.
The concentration of the grinding material is the mass ratio of the grinding material to the total mass of the polishing solution.
It is understood that the abrasive concentration is 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, or 50%.
The oxidant is at least one of hydrogen peroxide, peracetic acid, sodium percarbonate, ammonium persulfate, sodium perborate, ferric nitrate, potassium iodate, aluminum trichloride, sodium hypochlorite, potassium permanganate, hypobromous acid and hypoiodic acid.
In the technical scheme of the invention, the polishing solution also contains an oxidant, and the oxidant is at least one of hydrogen peroxide, peracetic acid, sodium percarbonate, ammonium persulfate, sodium perborate, ferric nitrate, potassium iodate, aluminum trichloride, sodium hypochlorite, potassium permanganate, hypobromous acid and hypoiodic acid. The oxidizing agent can enhance the chemical corrosion effect on the surface of the substrate to improve the polishing effect.
The lubricant is at least one of ethylene glycol, propylene glycol, butylene glycol, glycerol, diethylene glycol, dipropylene glycol and dibutylene glycol.
It is understood that the abrasive or other component may scratch the surface of the substrate during polishing of the substrate.
In the technical scheme of the invention, the polishing solution also contains a lubricant, and the lubricant is selected from at least one of ethylene glycol, propylene glycol, butanediol, glycerol, diethylene glycol, dipropylene glycol and dibutylene glycol, so that surface scratches possibly caused can be reduced.
The chelating agent is at least one of nitrilotriacetic acid, benzotriazole, benzimidazole, benzothiazole, ethylene diamine tetraacetic acid and salts thereof, diethylene triamine pentaacetic acid and salts thereof, malic acid and salts thereof, tartaric acid and salts thereof, succinic acid and salts thereof, malonic acid and salts thereof, succinic acid and salts thereof, oxalic acid, sodium tripolyphosphate, dihydroxyethyl glycine and tetrasodium iminodisuccinate.
In the technical scheme of the invention, the polishing solution further comprises a chelating agent, wherein the chelating agent is at least one of nitrilotriacetic acid, benzotriazole, benzimidazole, benzothiazole, ethylene diamine tetraacetic acid and salts thereof, diethylenetriamine pentaacetic acid and salts thereof, malic acid and salts thereof, tartaric acid and salts thereof, succinic acid and salts thereof, malonic acid and salts thereof, succinic acid and salts thereof, oxalic acid, sodium tripolyphosphate, dihydroxyethylglycine and tetrasodium iminodisuccinate. The chelating agent can reduce the degree of ion contamination of the substrate surface and increase the polishing rate.
The polishing solution also contains a pH regulator with the mass percent content of 0.01-2%, wherein the pH regulator is at least one of sulfuric acid and weak alkali salt thereof, nitric acid and weak alkali salt thereof, hydrochloric acid and weak alkali salt thereof, sodium hydroxide and weak acid salt thereof, and potassium hydroxide and weak acid salt thereof.
The pH value of the polishing solution is 10-12.
It is understood that the polishing solution has a pH of 10, 11, or 12.
In the technical scheme of the invention, the polishing solution also contains a pH regulator. The pH regulator is at least one of sulfuric acid and its weak alkali salt, nitric acid and its weak alkali salt, hydrochloric acid and its weak alkali salt, sodium hydroxide and its weak acid salt, potassium hydroxide and its weak acid salt. The pH regulator can stabilize the chemical action of the polishing solution.
The polishing solution also contains 0.001-1% of a bactericide by mass, wherein the bactericide is at least one of 1.2-benzisothiazolin-3-one, octyl hexyl glycerol, iodopropynyl butyl carbamate, 1.3-dimethylol-5.5-dimethylcaprolactam, 5-chloro-2-methyl-4-isothiazolinone, diazoimidazolidinyl urea, ethylene glycol monophenyl ether, potassium sorbate, nipagin methyl ester, sodium dehydroacetate and calcium propionate.
In the technical scheme of the invention, the polishing solution also contains a bactericide. The bactericide is at least one of 1, 2-benzisothiazoline-3-one, octyl hexyl glycerol, iodopropynyl butyl carbamate, 1, 3-dimethylol-5, 5-dimethyl caprolactam, 5-chlorine-2-methyl-4-isothiazolinone, diazo imidazolidinyl urea, ethylene glycol monophenyl ether, potassium sorbate, methylparaben, sodium dehydroacetate and calcium propionate. The bactericide can prevent the growth of fungi and mould.
The polishing solution also contains a dispersant with the mass percent content of 0.1-2%, and the dispersant is a hyper-dispersant.
The hyperdispersant is a high molecular compound with surface activity and the molecular weight of more than thousands of the high molecular compound, and essentially belongs to a surfactant.
The dispersant may be one or more of oleic acid, stearic acid, sodium petroleum sulfonate, octadecylamine oleate, EFKA series dispersants (manufactured by EFKA chemical Co., Netherlands), acrylic acid-styrene-butyl acrylate copolymer, Solsperse series hyperdispersant (manufactured by ICI Co., British), Hypersol series hyperdispersant (manufactured by Tomba KVK Co., Ltd.).
In the technical scheme of the invention, the polishing solution also contains a dispersing agent. The dispersing agent can prevent the abrasive from agglomerating, and prevent the abrasive from scratching the surface of the base material due to agglomeration.
The polishing solution further comprises a surfactant with the mass percent content of 0.01-2%, wherein the surfactant is at least one of tween, span, fatty alcohol-polyoxyethylene ether sodium sulfate, alkylphenol ethoxylate, lauryl sodium sulfate, dodecyl dimethyl benzyl ammonium chloride, 3-sulfopropyl tetradecyl dimethyl betaine and cocamidopropyl betaine.
In the technical scheme of the invention, the polishing solution also contains a surfactant. The surfactant is at least one of Tween, span, fatty alcohol-polyoxyethylene ether sodium sulfate, alkylphenol polyoxyethylene, sodium dodecyl sulfate, dodecyl dimethyl benzyl ammonium chloride, 3-sulfopropyl tetradecyl dimethyl betaine and cocamidopropyl betaine. The surfactant can facilitate cleaning of the substrate after polishing and reduce ion contamination.
The invention also provides a preparation method of the polishing solution, which comprises the following steps:
providing an abrasive;
adding water into the abrasive, and dispersing for 20-50min to obtain an abrasive concentrated solution; and
diluting the abrasive concentrated solution with water, adding an oxidant, a lubricant and a chelating agent into the diluted abrasive concentrated solution, and dispersing for 20-50min to obtain the polishing solution.
In some embodiments, the water is ultrapure water.
In some embodiments, water is added to the abrasive and subjected to a first dispersion treatment to obtain a highly dispersible abrasive concentrate. In the first dispersion treatment, soft agglomerates among the abrasive grains can be eliminated, and the morphology of the abrasive is also modified to reduce the possibility of scratching the surface of the substrate during polishing.
The first dispersion treatment is one or more of ultrasonic dispersion, magnetic stirring dispersion, electric stirring dispersion, high-speed shearing emulsification dispersion, planetary ball milling dispersion and high-speed sanding dispersion.
And diluting the grinding material concentrated solution by using water so as to enable the grinding material to have a specific concentration, sequentially adding various auxiliary agents into the grinding material concentrated solution, and performing second dispersion treatment.
If the abrasive and various auxiliary agents are added into water at one time and then dispersed, the heat generated in the dispersing process can cause chemical reaction among the components, thereby reducing the chemical efficiency and causing corresponding damage to equipment. For example, in this process, the oxidizing agent is easily decomposed by heat absorption, which leads to a decrease in the chemical action of the polishing liquid, and further leads to problems such as scratching of the substrate surface, a decrease in the flatness of the substrate surface, and the like. Due to the limitation of the specification of high-speed dispersion equipment, the polishing solution is not beneficial to the mass production when being mixed at one time. Therefore, the invention adopts a two-step method, so that the obtained polishing solution not only has chemical stability, but also can realize mass production.
The second dispersion treatment is one or more of ultrasonic dispersion, magnetic stirring dispersion, electric stirring dispersion, high-speed shearing emulsification dispersion and common mechanical stirring dispersion.
In the technical scheme of the invention, the polishing solution contains an abrasive, a chelating agent, an oxidizing agent, a lubricant and water. The abrasive can be used to polish the surface of a substrate. The chelating agent can reduce ion staining and increase the polishing rate. The oxidizing agent can enhance chemical etching of the substrate surface to enhance polishing effect and polishing rate. The lubricant is useful for reducing surface scratches that may result to improve polishing performance. The abrasive, the chelating agent, the oxidant and the lubricant act together, so that the polishing rate of the surface of the base material can be improved, the universality is high, and the base materials made of different materials can be polished.
In some embodiments, the abrasive concentrate has an abrasive to water mass ratio of 1: 1.5 to 2.5.
In some embodiments, the abrasive to water mass ratio is 1: 1.5, 1: 1.6, 1: 1.7, 1: 1.8, 1: 1.9, 1: 2. 1: 2.1, 1: 2.2, 1: 2.3, 1: 2.4, or 1: 2.5.
in some embodiments, the diluted abrasive concentrate has an abrasive to water mass ratio of 1: 3 to 8.
In some embodiments, the diluted abrasive concentrate has an abrasive to water mass ratio of 1: 3. 1: 4. 1: 5. 1: 6. 1: 7. or 1: 8.
the preparation method of the polishing solution further comprises the step of adding at least one of a pH regulator, a bactericide, a surfactant and a dispersant into the diluted abrasive concentrated solution.
In some embodiments, the pH regulator is 0.01-2 wt%, the bactericide is 0.001-1 wt%, the surfactant is 0.01-2 wt%, and the dispersant is 0.1-2 wt%.
In the technical scheme of the invention, the preparation method of the polishing solution further comprises the step of adding at least one of a pH regulator, a bactericide, a surfactant and a dispersing agent into the diluted abrasive concentrated solution. The pH regulator can stabilize the chemical action of the polishing solution. The bactericide can prevent fungi and mold from growing. The dispersing agent can prevent the abrasive from agglomerating, and prevent the abrasive from scratching the surface of the base material due to agglomeration. The surfactant can facilitate cleaning of the substrate after polishing and reduce ionic contamination.
Example one (without abrasive):
providing raw materials: 4622.5g of ultrapure water, 25g of EFKA dispersant, 250g of sodium hypochlorite, 100g of dipropylene glycol, 0.5g of sodium dodecyl sulfate, 0.5g of cocamidopropyl betaine, 0.5g of benzotriazole, 0.5g of iodopropynyl butyl carbamate and 0.5g of hydrochloric acid.
The preparation method comprises the following steps: adding an EFKA series dispersant, sodium hypochlorite, dipropylene glycol, sodium dodecyl sulfate, cocamidopropyl betaine, benzotriazole and iodopropynyl butyl carbamate into ultrapure water under the stirring condition, and adding hydrochloric acid to adjust the pH value to 11.5 to obtain the polishing solution I suitable for the III-V semiconductor material. The stirring time was 20 min.
Example two:
providing raw materials: 500g of alumina powder with the particle size of 50nm, 4122.5g of ultrapure water, 25g of EFKA dispersant, 250g of sodium hypochlorite, 100g of dipropylene glycol, 0.5g of sodium dodecyl sulfate, 0.5g of cocamidopropyl betaine, 0.5g of benzotriazole, 0.5g of iodopropynyl butyl carbamate and 0.5g of hydrochloric acid.
The preparation method comprises the following steps:
adding 1000g of ultrapure water and an EFKA series dispersing agent into the alumina powder, and dispersing for 40min by using a planetary ball mill dispersing machine to obtain an abrasive concentrated solution;
and mixing the abrasive concentrated solution with 3122.5g of ultrapure water, adding sodium hypochlorite, dipropylene glycol, sodium dodecyl sulfate, cocamidopropyl betaine, benzotriazole and iodopropynyl butyl carbamate under the ultrasonic stirring condition, and regulating the pH to 11.5 by using hydrochloric acid to obtain the polishing solution II suitable for the III-V family semiconductor material. The ultrasonic stirring time is 20 min.
Example three:
providing raw materials: 1000g of alumina powder with the particle size of 50nm, 3622.5g of ultrapure water, 25g of EFKA dispersant, 250g of sodium hypochlorite, 100g of dipropylene glycol, 0.5g of sodium dodecyl sulfate, 0.5g of cocamidopropyl betaine, 0.5g of benzotriazole, 0.5g of iodopropynyl butyl carbamate and 0.5g of hydrochloric acid.
The preparation method comprises the following steps:
adding 2000g of ultrapure water and EFKA series dispersing agent into the alumina powder, and dispersing for 40min by using a planetary ball mill dispersing machine to obtain an abrasive concentrated solution;
and mixing the abrasive concentrated solution with 1622.5g of ultrapure water, adding sodium hypochlorite, dipropylene glycol, sodium dodecyl sulfate, cocamidopropyl betaine, benzotriazole and iodopropynyl butyl carbamate under the ultrasonic stirring condition, and regulating the pH to 11.5 by using hydrochloric acid to obtain polishing solution III suitable for the III-V family semiconductor material. The ultrasonic stirring time is 20 min.
Example four:
providing raw materials: 1500g of alumina powder with the particle size of 50nm, 3122.5g of ultrapure water, 25g of EFKA dispersant, 250g of sodium hypochlorite, 100g of dipropylene glycol, 0.5g of sodium dodecyl sulfate, 0.5g of cocamidopropyl betaine, 0.5g of benzotriazole, 0.5g of iodopropynyl butyl carbamate and 0.5g of hydrochloric acid.
The preparation method comprises the following steps:
adding 3000g of ultrapure water and an EFKA series dispersing agent into the alumina powder, and dispersing for 40min by using a planetary ball mill dispersing machine to obtain an abrasive concentrated solution;
and mixing the abrasive concentrated solution with 122.5g of ultrapure water, adding sodium hypochlorite, dipropylene glycol, sodium dodecyl sulfate, cocamidopropyl betaine, benzotriazole and iodopropynyl butyl carbamate under the ultrasonic stirring condition, and regulating the pH to 11.5 by using hydrochloric acid to obtain the polishing solution IV suitable for the III-V family semiconductor material. The ultrasonic stirring time is 20 min.
6-inch gallium arsenide (GaAs) wafers and indium phosphide (InP) wafers were polished with the prepared polishing solutions one to four using a desktop polishing machine manufactured by Roche technologies, Inc. (L g tech) to observe the influence of the abrasive concentration on the removal rate, the flow rate of the polishing solution was 200m L/min, and the pressure was 100g/cm2The table rotation speed was 60rpm, the gripper head rotation speed was 50rpm, and the polishing time was 20 min.
Referring to fig. 1, the removal rate increases with increasing abrasive concentration. However, as the abrasive concentration increases, the polished surface is scratched. That is, there is an optimum range of abrasive concentration in order to obtain a good polishing surface effect.
Example five:
providing raw materials: 500g of cerium oxide powder with the particle size of 50nm, 500g of high-purity silica sol with the particle size of 60nm, 3622.9g of ultrapure water, 25g of EFKA dispersant, 250g of hydrogen peroxide, 50g of ethylene glycol, 50g of diethylene glycol, 0.1g of alkylphenol polyoxyethylene, 0.5g of 3-sulfopropyltetradecyldimethyl betaine, 0.5g of potassium hydroxide, 0.5g of malonic acid and 0.5g of diazoimidazolidinyl urea.
The preparation method comprises the following steps:
adding 1000g of ultrapure water and Hypersol series dispersant into cerium oxide powder, and dispersing for 30min by using a high-speed shearing disperser to obtain an abrasive concentrated solution;
mixing the abrasive concentrated solution with 2622.9g of ultrapure water, adding high-purity silica sol, hydrogen peroxide, ferric nitrate, ethylene glycol, diethylene glycol, alkylphenol polyoxyethylene, 3-sulfopropyl tetradecyl dimethyl betaine, malonic acid and diazoimidazolidinyl urea under the stirring condition, and adjusting the pH to 11 by using potassium hydroxide to obtain polishing solution V suitable for III-V semiconductor materials. The stirring time was 30 min.
Example six:
providing raw materials: 500g of cerium oxide powder with the particle size of 50nm, 500g of high-purity silica sol with the particle size of 60nm, 3622.4g of ultrapure water, 25g of Hypersol series dispersant, 250g of hydrogen peroxide, 0.5g of ferric nitrate, 50g of ethylene glycol, 50g of diethylene glycol, 0.1g of alkylphenol polyoxyethylene ether, 0.5g of 3-sulfopropyltetradecyl dimethyl betaine, 0.5g of potassium hydroxide, 0.5g of malonic acid and 0.5g of diazolidinyl urea.
The preparation method comprises the following steps:
adding 1000g of ultrapure water and Hypersol series dispersant into cerium oxide powder, and dispersing for 30min by using a high-speed shearing disperser to obtain an abrasive concentrated solution;
mixing the abrasive concentrated solution with 2622.4g of ultrapure water, adding high-purity silica sol, hydrogen peroxide, ferric nitrate, ethylene glycol, diethylene glycol, alkylphenol polyoxyethylene, 3-sulfopropyl tetradecyl dimethyl betaine, malonic acid and diazoimidazolidinyl urea under the stirring condition, and adjusting the pH to 11 by using potassium hydroxide to obtain polishing solution six suitable for III-V semiconductor materials. The stirring time was 30 min.
Example seven:
providing raw materials: 500g of cerium oxide powder with the particle size of 50nm, 500g of high-purity silica sol with the particle size of 60nm, 3621.9g of ultrapure water, 25g of Hypersol series dispersant, 250g of hydrogen peroxide, 1g of ferric nitrate, 50g of ethylene glycol, 50g of diethylene glycol, 0.1g of alkylphenol polyoxyethylene ether, 0.5g of 3-sulfopropyltetradecyldimethyl betaine, 0.5g of potassium hydroxide, 0.5g of malonic acid and 0.5g of diazolidinyl urea.
The preparation method comprises the following steps:
adding 1000g of ultrapure water and Hypersol series dispersant into cerium oxide powder, and dispersing for 30min by using a high-speed shearing disperser to obtain an abrasive concentrated solution;
mixing the abrasive concentrated solution with 2621.9g of ultrapure water, adding high-purity silica sol, hydrogen peroxide, ferric nitrate, ethylene glycol, diethylene glycol, alkylphenol polyoxyethylene, 3-sulfopropyl tetradecyl dimethyl betaine, malonic acid and diazoimidazolidinyl urea under the stirring condition, and adjusting the pH to 11 by using potassium hydroxide to obtain polishing solution seven suitable for III-V semiconductor materials. The stirring time was 30 min.
Example eight:
providing raw materials: 500g of cerium oxide powder with the particle size of 50nm, 500g of high-purity silica sol with the particle size of 60nm, 3621.4g of ultrapure water, 25g of Hypersol series dispersant, 250g of hydrogen peroxide, 1.5g of ferric nitrate, 50g of ethylene glycol, 50g of diethylene glycol, 0.1g of alkylphenol polyoxyethylene ether, 0.5g of 3-sulfopropyltetradecyl dimethyl betaine, 0.5g of potassium hydroxide, 0.5g of malonic acid and 0.5g of diazolidinyl urea.
The preparation method comprises the following steps:
adding 1000g of ultrapure water and Hypersol series dispersant into cerium oxide powder, and dispersing for 30min by using a high-speed shearing disperser to obtain an abrasive concentrated solution;
mixing the abrasive concentrated solution with 2621.9g of ultrapure water, adding high-purity silica sol, hydrogen peroxide, ferric nitrate, ethylene glycol, diethylene glycol, alkylphenol polyoxyethylene, 3-sulfopropyl tetradecyl dimethyl betaine, malonic acid and diazoimidazolidinyl urea under the stirring condition, and adjusting the pH to 11 by using potassium hydroxide to obtain the polishing solution eight suitable for the III-V semiconductor material. The stirring time was 30 min.
6-inch gallium arsenide (GaAs) wafers and indium phosphide (InP) wafers were polished with the prepared polishing solutions of five to eight and a desktop polisher manufactured by Roche technologies, Inc. (L g itech), to observe the influence of the abrasive concentration on the removal rate, the flow rate of the polishing solution was 200m L/min, the pressure was 100g/cm2, the rotation speed of the platen was 60rpm, the rotation speed of the chuck head was 50rpm, and the polishing time was 20 min.
Referring to fig. 2, the addition of ferric nitrate in the presence of hydrogen peroxide increases the removal rate. However, as the concentration of ferric nitrate increases, the stability of the slurry decreases, and a yellow substance is formed. In order to avoid the ion contamination, the amount of ferric nitrate to be added should be controlled within a certain range.
Example nine:
providing raw materials: 1000g of silicon dioxide powder with the particle size of 40nm, 3712g of ultrapure water, 30g of octadecylamine, 250g of ammonium persulfate, 5g of fatty alcohol-polyoxyethylene ether sodium sulfate, 0.5g of disodium ethylene diamine tetraacetate, 0.5g of sodium dehydroacetate and 2g of sodium hydroxide.
The preparation method comprises the following steps:
adding 2100g of ultrapure water and octadecylamine into the silicon dioxide powder, and dispersing for 40min by using a high-speed shearing emulsifying machine to obtain an abrasive concentrated solution;
mixing the abrasive concentrated solution with 1612g of ultrapure water, adding ammonium persulfate, fatty alcohol polyoxyethylene ether sodium sulfate, alkylphenol polyoxyethylene, disodium ethylene diamine tetraacetate and sodium dehydroacetate under the condition of ultrasonic stirring, and adjusting the pH to 11.3 by using sodium hydroxide to obtain the polishing solution nine suitable for the III-V group semiconductor material. The stirring time was 25 min.
Example ten:
providing raw materials: 1000g of silicon dioxide powder with the particle size of 40nm, 3452g of ultrapure water, 30g of octadecylamine, 250g of ammonium persulfate, 5g of fatty alcohol-polyoxyethylene ether sodium sulfate, 10g of alkylphenol polyoxyethylene, 0.5g of ethylenediamine tetraacetic acid disodium, 0.5g of sodium dehydroacetate, 250g of ethylene glycol and 2g of sodium hydroxide.
The preparation method comprises the following steps:
adding 2100g of ultrapure water and octadecylamine into the silicon dioxide powder, and dispersing for 40min by using a high-speed shearing emulsifying machine to obtain an abrasive concentrated solution;
and mixing the abrasive concentrated solution with 1352g of ultrapure water, adding ammonium persulfate, fatty alcohol polyoxyethylene ether sodium sulfate, alkylphenol polyoxyethylene, disodium ethylene diamine tetraacetate, sodium dehydroacetate and ethylene glycol under the ultrasonic stirring condition, and adjusting the pH value to 11.3 by using sodium hydroxide to obtain the polishing solution applicable to the III-V group semiconductor material. The stirring time was 25 min.
Example eleven:
providing raw materials: 1000g of silicon dioxide powder with the particle size of 40nm, 3452g of ultrapure water, 30g of octadecylamine, 250g of ammonium persulfate, 250g of glycerol, 5g of fatty alcohol-polyoxyethylene ether sodium sulfate, 10g of alkylphenol polyoxyethylene, 0.5g of disodium ethylene diamine tetraacetate, 0.5g of sodium dehydroacetate and 2g of sodium hydroxide.
The preparation method comprises the following steps:
adding 2100g of ultrapure water and octadecylamine into the silicon dioxide powder, and dispersing for 40min by using a high-speed shearing emulsifying machine to obtain an abrasive concentrated solution;
and mixing the abrasive concentrated solution with 1352g of ultrapure water, adding ammonium persulfate, glycerol, fatty alcohol-polyoxyethylene ether sodium sulfate, alkylphenol ethoxylates, disodium ethylene diamine tetraacetate and sodium dehydroacetate under the ultrasonic stirring condition, and adjusting the pH value to 11.3 by using sodium hydroxide to obtain polishing solution eleven suitable for the III-V group semiconductor material. The stirring time was 25 min.
Example twelve:
providing raw materials: 1000g of silicon dioxide powder with the particle size of 40nm, 3452g of ultrapure water, 30g of octadecylamine, 250g of ammonium persulfate, 250g of diethylene glycol, 5g of fatty alcohol-polyoxyethylene ether sodium sulfate, 10g of alkylphenol polyoxyethylene, 0.5g of disodium ethylene diamine tetraacetate, 0.5g of sodium dehydroacetate and 2g of sodium hydroxide.
The preparation method comprises the following steps:
adding 2100g of ultrapure water and octadecylamine into the silicon dioxide powder, and dispersing for 40min by using a high-speed shearing emulsifying machine to obtain an abrasive concentrated solution;
and mixing the abrasive concentrated solution with 1352g of ultrapure water, adding ammonium persulfate, diethylene glycol, fatty alcohol-polyoxyethylene ether sodium sulfate, alkylphenol ethoxylates, disodium ethylene diamine tetraacetate and sodium dehydroacetate under the ultrasonic stirring condition, and adjusting the pH value to 11.3 by using sodium hydroxide to obtain the polishing solution twelve suitable for the III-V family semiconductor material. The stirring time was 25 min.
6-inch gallium arsenide (GaAs) wafers and indium phosphide (InP) wafers were polished with the prepared polishing solutions of nine to twelve and a table-top polisher manufactured by Robotic technologies, Inc. (L g tech) to observe the influence of the abrasive concentration on the removal rate, the flow rate of the polishing solution was 200m L/min, the pressure was 100g/cm2, the rotation speed of the platen was 60rpm, the rotation speed of the chuck head was 50rpm, and the polishing time was 20 min.
The effect of the lubricant on the polishing effect is shown in table 1, and the lubricant can reduce scratches on the surface of the substrate after polishing and obtain a good polished surface.
TABLE 1
| Lubricant agent | Content (wt.) | Polishing effect | |
| Example nine | Is free of | 0g | Scratch on the surface of the substrate |
| Example ten | Ethylene glycol | 250g | No obvious scratch |
| EXAMPLE eleven | Glycerol | 250g | No obvious scratch |
| Example twelve | Diethylene glycol | 250g | No obvious scratch |
Example thirteen:
providing raw materials: 750g of silicon carbide powder with the particle size of 100nm, 3690.75g of ultrapure water, 50g of octadecylamine oleate, 400g of sodium hypochlorite, 5g of hypoiodic acid, 50g of propylene glycol, 50g of dipropylene glycol, 1g of fatty alcohol polyoxyethylene ether, 1g of dodecyl dimethyl benzyl ammonium chloride, 1g of 3-sulfopropyl tetradecyl dimethyl betaine, 0.5g of disodium ethylene diamine tetraacetate, 0.25g of potassium sorbate and 0.5g of potassium hydroxide.
The preparation method comprises the following steps:
adding 1500g of ultrapure water and octadecylamine oleate into the silicon carbide powder, and circularly dispersing for 20min by using a sand mill to obtain an abrasive concentrated solution;
mixing the abrasive concentrated solution with 2190.75g of ultrapure water, adding sodium hypochlorite, hypoiodic acid, propylene glycol, dipropylene glycol, fatty alcohol-polyoxyethylene ether, dodecyl dimethyl benzyl ammonium chloride, 3-sulfopropyl tetradecyl dimethyl betaine, disodium ethylene diamine tetraacetate and potassium sorbate under the ultrasonic stirring condition, and adjusting the pH value to 12 by using sodium hydroxide to obtain the polishing solution thirteen suitable for the III-V semiconductor material. The stirring time was 35 min.
Example fourteen:
providing raw materials: 750g of silicon carbide powder with the particle size of 100nm, 3690.75g of ultrapure water, 50g of octadecylamine oleate, 400g of sodium hypochlorite, 5g of hypoiodic acid, 50g of propylene glycol, 50g of dipropylene glycol, 1g of fatty alcohol polyoxyethylene ether, 1g of dodecyl dimethyl benzyl ammonium chloride, 1g of 3-sulfopropyl tetradecyl dimethyl betaine, 0.5g of disodium ethylene diamine tetraacetate, 0.25g of potassium sorbate and 0.5g of potassium hydroxide.
The preparation method comprises the following steps:
adding 3000g of ultrapure water and octadecylamine oleate into the silicon carbide powder, and circularly dispersing for 20min by using a sand mill to obtain an abrasive concentrated solution;
mixing the abrasive concentrated solution with 690.75g of ultrapure water, adding sodium hypochlorite, hypoiodic acid, propylene glycol, dipropylene glycol, fatty alcohol-polyoxyethylene ether, dodecyl dimethyl benzyl ammonium chloride, 3-sulfopropyl tetradecyl dimethyl betaine, disodium ethylene diamine tetraacetate and potassium sorbate under the ultrasonic stirring condition, and adjusting the pH value to 12 by using sodium hydroxide to obtain the polishing solution fourteen suitable for the III-V semiconductor material. The stirring time was 35 min.
Example fifteen:
providing raw materials: 750g of silicon carbide powder with the particle size of 100nm, 3690.75g of ultrapure water, 50g of octadecylamine oleate, 400g of sodium hypochlorite, 5g of hypoiodic acid, 50g of propylene glycol, 50g of dipropylene glycol, 1g of fatty alcohol polyoxyethylene ether, 1g of dodecyl dimethyl benzyl ammonium chloride, 1g of 3-sulfopropyl tetradecyl dimethyl betaine, 0.5g of disodium ethylene diamine tetraacetate, 0.25g of potassium sorbate and 0.5g of potassium hydroxide.
The preparation method comprises the following steps:
adding octadecylamine oleate, 3690.75g ultrapure water, sodium hypochlorite, hypoiodic acid, propylene glycol, dipropylene glycol, fatty alcohol-polyoxyethylene ether, dodecyl dimethyl benzyl ammonium chloride, 3-sulfopropyl tetradecyl dimethyl betaine, disodium ethylene diamine tetraacetate and potassium sorbate into silicon carbide powder, adjusting the pH value to 12 by using sodium hydroxide, and stirring for 35min by using a sand mill to obtain the polishing solution fifteen suitable for the III-V semiconductor material.
6-inch gallium arsenide (GaAs) wafers and indium phosphide (InP) wafers were polished with the prepared slurries thirteen to fifteen and a table-top polisher manufactured by Robotic technologies (L g tech) to observe the influence of the abrasive concentration on the removal rate, the slurry flow rate was 200m L/min, the pressure was 100g/cm2, the platen rotation speed was 60rpm, the chuck rotation speed was 50rpm, and the polishing time was 20 min.
The effect of the process on the polishing effect is shown in fig. 3, the removal rate of the polishing solution fourteen is slightly higher than that of the polishing solution thirteen, and the removal rate of the polishing solution fifteen is obviously lower than that of the polishing solutions thirteen and fourteen, which indicates that: the polishing solution is not suitable to be prepared by adopting a one-step feeding method. In the mass production stage of the polishing solution, it is more preferable to prepare the abrasive concentrate first, and then dilute and add the relevant additives.
Example sixteen:
providing raw materials: 100g of diamond with the particle size of 90nm, 50g of ammonium persulfate, 20g of ethylene glycol, 5g of petroleum sodium sulfonate, 0.05g of alkylphenol polyoxyethylene, 0.1g of potassium hydroxide, 0.1g of malonic acid, 0.1g of bactericide and 824.65g of ultrapure water.
The preparation method comprises the following steps:
adding ultrapure water, ammonium persulfate, ethylene glycol, petroleum sodium sulfonate, alkylphenol polyoxyethylene ether, malonic acid and a bactericide into the diamond; and regulating the pH value to 11 by using potassium hydroxide, and dispersing by using a high-speed stirrer for 30min to obtain sixteen polishing solution suitable for the III-V semiconductor material.
And respectively putting 100g of sixteen polishing solutions into 6 reagent bottles, and respectively adding different bactericides into the 6 reagent bottles, wherein the bactericide is not added into the reagent bottle 1.
TABLE 2
The effect of the biocide on the polishing slurry mildew is shown in table 2. As is clear from table 2, the inhibitory effects of different bactericidal substances on mildew are different. If the stability of the polishing solution is to be ensured, a proper bactericide is selected.
Referring to table 3, the polishing solutions of examples one to four were compared with the commercially available polishing solutions, and the results showed that the polishing solutions of the present invention have better polishing effects.
TABLE 3
Example seventeen:
providing raw materials: 50g of diamond with the particle size of 100nm, 60g of silicon carbide with the particle size of 50nm, 10g of hypobromous acid, 30g of hypoiodic acid, 50g of butanediol, 5g of benzothiazole and 795g of ultrapure water.
The preparation method comprises the following steps:
and adding hypobromous acid, hypoiodic acid, butanediol, benzothiazole and ultrapure water into the diamond and the silicon carbide, and stirring by using a high-speed stirrer for 50min to obtain the polishing solution seventeen suitable for the III-V semiconductor material.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
While the invention has been described with reference to specific embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. The polishing solution is characterized by comprising an abrasive, an oxidizing agent, a lubricant, a chelating agent and water.
2. The polishing solution according to claim 1, wherein the polishing solution contains 10 to 20% by mass of an abrasive, 1 to 10% by mass of an oxidizing agent, 1 to 5% by mass of a lubricant, 0.001 to 1% by mass of a chelating agent, and 60 to 85% by mass of water.
3. The polishing solution according to claim 1, wherein the abrasive is at least one of alumina, ceria, silica, silicon carbide, and diamond; and/or
The grain size of the abrasive is 10-100 nm; and/or
The concentration of the abrasive is 5-50%.
4. The polishing solution according to any one of claims 1 to 3, wherein the oxidizing agent is at least one of hydrogen peroxide, peracetic acid, sodium percarbonate, ammonium persulfate, sodium perborate, ferric nitrate, potassium iodate, aluminum trichloride, sodium hypochlorite, potassium permanganate, hypobromous acid, and hypoiodic acid; and/or
The lubricant is at least one of ethylene glycol, propylene glycol, butanediol, glycerol, diethylene glycol, dipropylene glycol and dibutylene glycol; and/or
The chelating agent is at least one of nitrilotriacetic acid, benzotriazole, benzimidazole, benzothiazole, ethylene diamine tetraacetic acid and salts thereof, diethylene triamine pentaacetic acid and salts thereof, malic acid and salts thereof, tartaric acid and salts thereof, succinic acid and salts thereof, malonic acid and salts thereof, succinic acid and salts thereof, oxalic acid, sodium tripolyphosphate, dihydroxyethyl glycine and tetrasodium iminodisuccinate.
5. The polishing solution according to any one of claims 1 to 3, further comprising 0.01 to 2% by mass of a pH adjusting agent, wherein the pH adjusting agent is at least one of sulfuric acid and a weak alkali salt thereof, nitric acid and a weak alkali salt thereof, hydrochloric acid and a weak alkali salt thereof, sodium hydroxide and a weak acid salt thereof, and potassium hydroxide and a weak acid salt thereof; and/or
The pH value of the polishing solution is 10-12.
6. The polishing solution according to any one of claims 1 to 3, further comprising 0.001 to 1% by mass of a bactericide which is at least one of 1.2-benzisothiazolin-3-one, octylhexylglycerin, iodopropynyl butyl carbamate, 1.3-dimethylol-5.5-dimethylcaprolactam, 5-chloro-2-methyl-4-isothiazolinone, diazolidinyl urea, ethylene glycol monophenyl ether, potassium sorbate, nipagin methyl ester, sodium dehydroacetate, and calcium propionate; and/or
The polishing solution also contains a dispersant with the mass percent content of 0.1-2%, and the dispersant is a hyper-dispersant; and/or
The polishing solution further contains a surfactant with the mass percentage content of 0.01-2%, wherein the surfactant is at least one of tween, span, fatty alcohol-polyoxyethylene ether sodium sulfate, alkylphenol ethoxylate, lauryl sodium sulfate, dodecyl dimethyl benzyl ammonium chloride, 3-sulfopropyl tetradecyl dimethyl betaine and cocamidopropyl betaine.
7. A preparation method of polishing solution comprises the following steps:
providing an abrasive;
adding water into the grinding material to obtain a grinding material concentrated solution; and
and diluting the abrasive concentrated solution by using water, and adding an oxidant, a lubricant and a chelating agent into the diluted abrasive concentrated solution to prepare the polishing solution.
8. The method for preparing the polishing solution according to claim 7, wherein the abrasive concentrated solution comprises the abrasive and water in a mass ratio of 1: 1.5-2.5; and/or
The abrasive is at least one of aluminum oxide, cerium oxide, silicon dioxide, silicon carbide and diamond; and/or
The grain size of the abrasive is 10-100 nm; and/or
The concentration of the abrasive is 5-50%; and/or
The mass ratio of the grinding material to the water in the diluted grinding material concentrated solution is 1: 3 to 8.
9. The method according to claim 7, further comprising a step of adding at least one of a pH adjuster, a bactericide, a surfactant, and a dispersant to the diluted abrasive concentrated solution.
10. The method of claim 9, wherein the pH adjuster is at least one of sulfuric acid and a weak alkali salt thereof, nitric acid and a weak alkali salt thereof, hydrochloric acid and a weak alkali salt thereof, sodium hydroxide and a weak acid salt thereof, and potassium hydroxide and a weak acid salt thereof; and/or
The pH value of the polishing solution is 10-12; and/or
The bactericide is at least one of 1, 2-benzisothiazolin-3-one, octyl hexyl glycerol, iodopropynyl butyl carbamate, 1, 3-dimethylol-5, 5-dimethylolamide, 5-chloro-2-methyl-4-isothiazolinone, diazo imidazolidinyl urea, ethylene glycol monophenyl ether, potassium sorbate, nipagin methyl ester, sodium dehydroacetate and calcium propionate; and/or
The dispersant is a hyper-dispersant; and/or
The surfactant is at least one of tween, span, fatty alcohol-polyoxyethylene ether sodium sulfate, alkylphenol polyoxyethylene, sodium dodecyl sulfate, dodecyl dimethyl benzyl ammonium chloride, 3-sulfopropyl tetradecyl dimethyl betaine and cocamidopropyl betaine.
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Application publication date: 20200717 |