CN102820223A - Chemical-mechanical polishing method for simultaneously polishing phase-change material and tungsten - Google Patents
Chemical-mechanical polishing method for simultaneously polishing phase-change material and tungsten Download PDFInfo
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- CN102820223A CN102820223A CN 201110153101 CN201110153101A CN102820223A CN 102820223 A CN102820223 A CN 102820223A CN 201110153101 CN201110153101 CN 201110153101 CN 201110153101 A CN201110153101 A CN 201110153101A CN 102820223 A CN102820223 A CN 102820223A
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Abstract
The invention provides a method for chemically and mechanically polishing tungsten and a phase-change material (PCM) such as germanium, antimony and tellurium (Ge, Sb and Te). The method includes placing the to-be-polished phase-change material and the to-be-polished tungsten on a polishing pad; mixing and blending grinding agents, selective oxidants containing monopersulfate composite salt and materials containing ferric ions into polishing solution; and applying the polishing solution to the surfaces of the phase-change material and the tungsten to simultaneously polish the surfaces of the phase-change material and the tungsten by the aid of polishing equipment. The method has the advantages that a polishing process can be quickly and effectively completed, damage to the polished surfaces is low, the polished surfaces are free of residual polishing solution, and requirements of storage devices made of phase-change materials to chemical-mechanical polishing can be met.
Description
Technical field
The present invention relates to a kind of cmp method, relate in particular to a kind of cmp method that polishes phase-change material and tungsten simultaneously.
Background technology
Phase transition storage is to utilize material to become crystal state by non-crystal state; Become again again in the process of non-crystal state; It is noncrystal to present different reflective characteristic and resistance characteristic with crystal state, utilizes amorphous state and crystalline state to represent " 0 " and " 1 " to store data respectively.Phase transition storage is as a kind of very promising data storage technology.It has faster than flash memory speed, and nerve is better, can realize the characteristic such as erasable more than 100,000,000 times.
Phase-change memory cell is made up of a kind of minimum sulfur family alloying pellet, concentrates under the situation of heating through the form of electric pulse, and it can be unordered amorphous state (resistance high state) from orderly crystalline state (resistance hangs down state) fast transition.The difference of the crystalline state of these alloy materials and amorphous state resistivity size can stores binary data.At present the PCM material of application prospect being arranged most is GST (germanium, antimony and tellurium) alloy.
In the actual course of processing of chip, (mainly be Ge with GST
2Sb
2Te
5) arrive silicon chip surface through chemical vapour deposition (CVD), need carry out planarization to silicon chip surface.(Chemical Mechanical Polishing/Planarization, CMP) technology is considered to the effective method of present overall planarization in chemico-mechanical polishing.Chemico-mechanical polishing is that chemical action, mechanism are combined the surface that is applied in silicon chip, and the process of carrying out oxidation and polishing on the surface of silicon chip simultaneously realizes the overall planarization of silicon chip under such double action.
Chemico-mechanical polishing about phase-change material; At present existing part prior art report uses oxidant (for example: hydrogen peroxide solution) add complexing agents such as oxalic acid, malonic acid, butanedioic acid, citric acid and carry out the GST polishing like U.S. Pat 7897061B2, US20070178700A1; US20100190339A1 use oxidant adds lysine and carries out the GST polishing; US7678605B2, US20090057834A1 add corrosion inhibitor (derivative of asparatate) with oxidant and carry out the GST polishing; US20090001339A1 reduces the metal attack (erosion) in the GST polishing process with triethylamine, quaternary ammonium salt oxidizer; US20100112906A1 carries out the GST polishing with quaternary ammonium base.
And for example to provide a kind of be that oxidant, organic acid are mixed the chemical mechanical polishing liquid that abrasive grains is a main component as chelating agent with the hydrogen peroxide to Chinese patent CN101370897A; Chinese patent CN101333420A provides the chemical mechanical polishing slurry of a kind of nitrogen-containing compound, abrasive grains, oxidant or abrasive grains and oxidant; Chinese patent CN101765647A provides a kind of composition that comprises particulate abrasive material and lysine oxidant; One kind of Chinese patent CN101333421A is used for the paste compound of chemico-mechanical polishing and is main component with deionized water and iron or iron compound, removes abrasive grains, thereby improves the profile pattern for the GST material.
The polishing that above-mentioned patent all is directed against the GST material has proposed new polishing fluid scheme; To improve polishing effect for the GST material; Yet we find that main in the existing technology is main oxidant with hydrogen peroxide, and existing oxidant is lower for the polishing speed of GST material; In the wherein above-mentioned patent; The polishing fluid that Chinese patent CN101333420A provides is the highest for GST material polishing speed, but also on average also only reach 2000 dusts/minute, the polishing efficiency of GST can't satisfy existing demand.
Tungsten is an electric conducting material commonly used in the semiconductor production process; Therefore in actual polishing process; Regular meeting runs into the situation that tungsten and phase-change material polish simultaneously; At present polishing phase-change material or tungsten generally use hydrogen peroxide to be oxidant, and as disclosing a kind of sulfur compound phase-change material cerium oxide chemico-mechanical polishing solution prescription among the Chinese patent CN101372606A, oxidant can be selected for use in the prescription just has hydrogen peroxide solution and potassium cyanide.But simple hydrogen peroxide solution is very low to the polishing velocity that tungsten and phase-change material polish, and needs to add catalyst usually.U.S. Pat 5958288 discloses ferric nitrate has been used as catalyst, and hydrogen peroxide is used as oxidant, carries out the method for tungsten chemico-mechanical polishing; U.S. Pat 5980775 and US6068787 add organic acid and make stabilizer on the US5958288 basis.Above-mentioned patented technology has been improved the decomposition rate of hydrogen peroxide to a certain extent, but polish simultaneously under the situation of phase-change material and tungsten, and whether above-mentioned patented technology is also not mentioned has higher polishing velocity.They are not high to the polishing velocity of phase-change material in the actual test.
Therefore, to the CMP process that polishes phase-change material and tungsten in the semiconductor chip production process simultaneously, still need the finishing method of high polishing speed.
Summary of the invention
The object of the present invention is to provide a kind of cmp method to phase-change material and tungsten new the time, can solve the not enough problem of base material polishing speed to containing phase-change material and tungsten simultaneously in the prior art.
In order to realize above-mentioned purpose, the present invention polishes the cmp method of phase-change material and tungsten simultaneously, it is characterized in that comprising following sequential steps:
Step 1: preparation contains the polishing fluid of grinding agent, oxidant, iron content ionic species;
Step 2: need the base material that phase-change material and tungsten polish simultaneously be placed on the polishing pad, the polishing fluid of preparation in the step 1 is polished phase-change material and tungsten simultaneously;
Wherein said oxidant comprises single persulfide, and is preferably monopersulfate salt and complex salt thereof.
Among the present invention, a kind of preferred implementation of cmp method, said oxidant comprises the composition that monopersulfate salt, disulfate and sulfate are formed, said salt can be sylvite, sodium salt, ammonium salt etc.
Among the present invention, the further preferred implementation of cmp method, said oxidant is the composition that Potassium Monopersulfate, potassium acid sulfate and potassium sulfate are formed; In use, the mol ratio of Potassium Monopersulfate, potassium acid sulfate, potassium sulfate consumption is preferably 2～5: 1～3: 1～3, and the optimum molar ratio is 2: 1: 1.
Preferably, the mass percent that the consumption of said oxidant accounts for polishing fluid is 0.05～15wt%, and further the consumption of the preferred oxidant mass percent that accounts for polishing fluid is 1～5wt%.
It can be one or more mixtures in silicon dioxide, aluminium oxide, cerium oxide, iron oxide, silicon nitride and the titanium oxide that the present invention polishes the grinding agent of being mentioned in the cmp method of phase-change material and tungsten simultaneously.The mass percent that grinding agent accounts for polishing fluid is controlled at 0.05～25wt%.
The present invention polishes simultaneously in the polishing fluid of being mentioned in the cmp method of phase-change material and tungsten and to cross the iron content ionic species and select for use and contain the iron ion inorganic salts and/or contain iron ion organic salt.The material that contains iron ion is meant in polishing fluid, can ionization goes out the material of iron ion.The iron content ionic species is preferably ferric nitrate, iron chloride, ferric sulfate and/or ferric acetate etc., and optimal selection is a ferric nitrate.
According to a kind of preferred implementation of cmp method according to the invention, the material concentration that contains iron ion is controlled at the scope of 40ppm～3000ppm, and preferred concentrations is controlled at 50ppm～2000ppm scope.
The pH value that the present invention polishes the chemical mechanical polishing liquid of being mentioned in the cmp method of phase-change material and tungsten simultaneously is controlled at 0.5～4, and best pH value is 1.5.
In the process of above-mentioned chemical polishing, polishing condition is preferably: grinding pressure is set in 3～6psi, and the grinding table rotating speed is controlled at 60-120 rev/min, 80-200 rev/min of grinding head rotation rotating speed, polishing fluid rate of addition 80～200 ml/min.
Technical method provided by the invention solved routine to phase-change material and tungsten polishing process in the not high problem of polishing velocity; With respect to hydrogen peroxide as oxidant; The polishing speed that the present invention uses single persulfide to be significantly improved unexpectedly as oxidant; The feasible process that can accomplish polishing for the chip that with silicon is substrate fast and effectively; And the polished surface that obtains damage is low, do not have residual polishing fluid, can satisfy the requirement of chemical polishing technology in the preparation phase-change material memory.
Embodiment
Below describe the present invention through concrete embodiment so that better understand the present invention, but following embodiment does not limit the scope of the invention.
According to listed component in the following example, deionized water mixes the back and is transferred to required pH value with pH conditioning agent (nitric acid or sulfuric acid), can make chemical mechanical polishing liquid.
Embodiment 1
Grinding agent is selected silicon dioxide for use, and the mass percent that its consumption accounts for whole polishing fluid is 5%, and oxidant is selected 2KHSO for use
5KHSO
4K
2SO
4, the mass percent that its consumption accounts for whole polishing fluid is 1%, and the concentration of ferric nitrate is controlled at 1000ppm in the polishing fluid, and the pH value adjusts to 1.5 with nitric acid.
Need place the base material that phase-change material and tungsten polish simultaneously and carry out chemico-mechanical polishing on the polishing pad, polishing condition: polishing machine platform is Logitech (Britain) 1PM52 type, the polytex polishing pad; 4cm * 4cm square wafer (Wafer); Grinding pressure 4psi, 90 rev/mins of grinding table rotating speeds, 140 rev/mins of grinding head rotation rotating speeds; Polishing fluid rate of addition 140ml/ minute, and add components such as complexing agent, surfactant as required.
Embodiment 2
Grinding agent is selected silicon dioxide for use, and the mass percent that its consumption accounts for whole polishing fluid is 5%, and oxidant is selected 2KHSO for use
5KHSO
4K
2SO
4, the mass percent that its consumption accounts for whole polishing fluid is 2%, and the concentration of ferric nitrate is controlled at 3000ppm in the polishing fluid, and the pH value adjusts to 1.5 with nitric acid.
With reference to embodiment 1 said method phase-change material and tungsten are polished simultaneously.
Embodiment 3
Grinding agent is selected silicon dioxide for use, and the mass percent that its consumption accounts for whole polishing fluid is 5%, and oxidant is selected 2KHSO for use
5KHSO
4K
2SO
4, the mass percent that its consumption accounts for whole polishing fluid is 0.1%, and the concentration of ferric nitrate is controlled at 50ppm in the polishing fluid, and the pH value adjusts to 1.5 with nitric acid.
With reference to embodiment 1 said method phase-change material and tungsten are polished simultaneously.
Embodiment 4
Grinding agent is selected silicon dioxide for use, and the mass percent that its consumption accounts for whole polishing fluid is 5%, and oxidant is selected 2KHSO for use
5KHSO
4K
2SO
4, the mass percent that its consumption accounts for whole polishing fluid is 10%, and the concentration of ferric nitrate is controlled at 2000ppm in the polishing fluid, and the pH value adjusts to 1.5 with nitric acid.
Need place the base material that phase-change material and tungsten polish simultaneously and carry out chemico-mechanical polishing on the polishing pad, polishing condition: polishing machine platform is Logitech (Britain) 1PM52 type, the polytex polishing pad; 4cm * 4cm square wafer (Wafer); Grinding pressure 3psi, 60 rev/mins of grinding table rotating speeds, 80 rev/mins of grinding head rotation rotating speeds; Polishing fluid rate of addition 80ml/ minute, and add components such as complexing agent, surfactant as required.
Embodiment 5
Grinding agent is selected silicon dioxide for use, and the mass percent that its consumption accounts for whole polishing fluid is 10%, and oxidant is selected 2KHSO for use
5KHSO
4K
2SO
4, the mass percent that its consumption accounts for whole polishing fluid is 5%, and the concentration of ferric nitrate is controlled at 100ppm in the polishing fluid, and the pH value adjusts to 0.5 with nitric acid.
Need place the base material that phase-change material and tungsten polish simultaneously and carry out chemico-mechanical polishing on the polishing pad, polishing condition: polishing machine platform is Logitech (Britain) 1PM52 type, the polytex polishing pad; 4cm * 4cm square wafer (Wafer); Grinding pressure 6psi, 120 rev/mins of grinding table rotating speeds, 200 rev/mins of grinding head rotation rotating speeds; Polishing fluid rate of addition 200ml/ minute, and add components such as complexing agent, surfactant as required.
Embodiment 6
Grinding agent is selected silicon dioxide for use, and the mass percent that its consumption accounts for whole polishing fluid is 20%, and oxidant is selected 2KHSO for use
5KHSO
4K
2SO
4, the mass percent that its consumption accounts for whole polishing fluid is 1%, and the concentration of ferric nitrate is controlled at 40ppm in the polishing fluid, and the pH value adjusts to 4 with nitric acid.
With reference to embodiment 1 said method phase-change material and tungsten are polished simultaneously.
Embodiment 7
Grinding agent is selected silicon dioxide for use, and the mass percent that its consumption accounts for whole polishing fluid is 0.1%, and oxidant is selected 2KHSO for use
5KHSO
4K
2SO
4, the mass percent that its consumption accounts for whole polishing fluid is 2%, and the concentration of ferric nitrate is controlled at 1000ppm in the polishing fluid, and the pH value adjusts to 1.5 with sulfuric acid.
With reference to embodiment 1 said method phase-change material and tungsten are polished simultaneously.
Embodiment 8
Grinding agent is selected aluminium oxide for use, and the mass percent that its consumption accounts for whole polishing fluid is 5%, and oxidant is selected 2KHSO for use
5KHSO
4K
2SO
4, the mass percent that its consumption accounts for whole polishing fluid is 2%, and the concentration of ferric nitrate is controlled at 500ppm in the polishing fluid, and the pH value adjusts to 4 with sulfuric acid.
With reference to embodiment 1 said method phase-change material and tungsten are polished simultaneously.
Embodiment 9
Grinding agent is selected cerium oxide for use, and the mass percent that its consumption accounts for whole polishing fluid is 3%, and oxidant is selected 2KHSO for use
5KHSO
4K
2SO
4, the mass percent that its consumption accounts for whole polishing fluid is 2%, and the concentration of ferric nitrate is controlled at 500ppm in the polishing fluid, and the pH value adjusts to 1.5 with nitric acid.
With reference to embodiment 1 said method phase-change material and tungsten are polished simultaneously.
Embodiment 10
Grinding agent is selected iron oxide for use, and the mass percent that its consumption accounts for whole polishing fluid is 5%, and oxidant is selected 2KHSO for use
5KHSO
4K
2SO
4, the mass percent that its consumption accounts for whole polishing fluid is 2%, and the concentration of iron chloride is controlled at 500ppm in the polishing fluid, and the pH value adjusts to 1.5 with nitric acid.
With reference to embodiment 1 said method phase-change material and tungsten are polished simultaneously.
Embodiment 11
Grinding agent is selected silicon nitride for use, and the mass percent that its consumption accounts for whole polishing fluid is 7%, and oxidant is selected 2KHSO for use
5KHSO
4K
2SO
4, the mass percent that its consumption accounts for whole polishing fluid is 2%, and the concentration of ferric sulfate is controlled at 500ppm in the polishing fluid, and the pH value adjusts to 1.5 with nitric acid.
With reference to embodiment 1 said method phase-change material and tungsten are polished simultaneously.
Embodiment 12
Grinding agent is selected titanium oxide for use, and the mass percent that its consumption accounts for whole polishing fluid is 10%, and oxidant is selected 2KHSO for use
5KHSO
4K
2SO
4, the mass percent that its consumption accounts for whole polishing fluid is 2%, and the concentration of ferric acetate is controlled at 500ppm in the polishing fluid, and the pH value adjusts to 1.5 with nitric acid.
With reference to embodiment 1 said method phase-change material and tungsten are polished simultaneously.
Embodiment 13
Grinding agent is selected silicon dioxide for use, and the mass percent that its consumption accounts for whole polishing fluid is 5%, and oxidant is selected 4KHSO for use
52KHSO
43K
2SO
4, the mass percent that its consumption accounts for whole polishing fluid is 2%, and the concentration of ferric nitrate is controlled at 1000ppm in the polishing fluid, and the pH value adjusts to 1.5 with nitric acid.
With reference to embodiment 1 said method phase-change material and tungsten are polished simultaneously.
Embodiment 14
Grinding agent is selected silicon dioxide for use, and the mass percent that its consumption accounts for whole polishing fluid is 5%, and oxidant is selected 4KHSO for use
53KHSO
42K
2SO
4, the mass percent that its consumption accounts for whole polishing fluid is 2%, and the concentration of ferric nitrate is controlled at 1000ppm in the polishing fluid, and the pH value adjusts to 1.5 with nitric acid.
With reference to embodiment 1 said method phase-change material and tungsten are polished simultaneously.
Embodiment 15
Grinding agent is selected silicon dioxide for use, and the mass percent that its consumption accounts for whole polishing fluid is 5%, and oxidant is selected 2KHSO for use
52KHSO
4K
2SO
4, the mass percent that its consumption accounts for whole polishing fluid is 2%, and the concentration of ferric nitrate is controlled at 1000ppm in the polishing fluid, and the pH value adjusts to 1.5 with nitric acid.
With reference to embodiment 1 said method phase-change material and tungsten are polished simultaneously.
Embodiment 16
Grinding agent is selected silicon dioxide for use, and the mass percent that its consumption accounts for whole polishing fluid is 5%, and oxidant is selected KHSO for use
5KHSO
4K
2SO
4, the mass percent that its consumption accounts for whole polishing fluid is 2%, and the concentration of ferric nitrate is controlled at 2000ppm in the polishing fluid, and the pH value adjusts to 1.5 with nitric acid.
With reference to embodiment 1 said method phase-change material and tungsten are polished simultaneously.
Embodiment 17
Grinding agent is selected silicon dioxide for use, and the mass percent that its consumption accounts for whole polishing fluid is 5%, and oxidant is selected 5KHSO for use
53KHSO
43K
2SO
4, the mass percent that its consumption accounts for whole polishing fluid is 2%, and the concentration of ferric nitrate is controlled at 1000ppm in the polishing fluid, and the pH value adjusts to 1.5 with nitric acid.
With reference to embodiment 1 said method phase-change material and tungsten are polished simultaneously.
The comparative example 1
Grinding agent is selected silicon dioxide for use; The mass percent that its consumption accounts for whole polishing fluid is 5%, and oxidant is selected hydrogen peroxide solution for use, and the mass percent that its consumption accounts for whole polishing fluid is 1%; The concentration of ferric nitrate is controlled at 1000ppm in the polishing fluid, and the pH value adjusts to 1.5 with sulfuric acid.
With reference to embodiment 1 said method phase-change material and tungsten are polished simultaneously.
The comparative example 2
Grinding agent is selected silicon dioxide for use; The mass percent that its consumption accounts for whole polishing fluid is 5%, and oxidant is selected hydrogen peroxide solution for use, and the mass percent that its consumption accounts for whole polishing fluid is 1%; The concentration of ferric nitrate is controlled at 1000ppm in the polishing fluid, and the pH value adjusts to 1.5 with nitric acid.
With reference to embodiment 1 said method phase-change material and tungsten are polished simultaneously.
After having prepared above-mentioned polishing fluid, fix the chip of need polishing with grinding head, the front with chip is pressed on the polishing pad then.When carrying out chemico-mechanical polishing, grinding head linearity on polishing pad moves or rotates along the direction of motion the same with grinding table.Meanwhile, drip to the polishing fluid that contains grinding agent on the polishing pad, and because of centrifugal action is tiled on the polishing pad, thereby chip surface is realized overall planarization under machinery and chemical dual effect.
Effect embodiment
When the top polishing fluid of respectively organizing the preparation of embodiment component is applied to polish, writes down data necessary such as corresponding polishing velocity and polished surface situation, and be recorded in the table 1.
Table 1 the foregoing description polishing GST and tungsten effect
Show according to table 1 data, can draw following results:
Embodiment 1 compares with Comparative Examples 1, embodiment 2 compares with Comparative Examples 2, is illustrated in when the GST material polished, and the polishing fluid polishing velocity that contains oxidant and the ferric nitrate of single persulfide roughly is 5 times of polishing fluids that contain hydrogen peroxide solution; When tungsten was polished, the polishing fluid polishing velocity that contains oxidant and the ferric nitrate of single persulfide roughly was 6 times of polishing fluids that contain hydrogen peroxide solution.
Can find out by last table; The present invention adopts the complex salt of monopersulfate salt to polish phase-change material and tungsten simultaneously as oxidant; Compare with hydrogen peroxide; Have higher polishing speed unexpectedly, so the present invention obviously improved the polishing velocity to the polishing of phase-change material and tungsten, made and to accomplish the process that phase-change material and tungsten polish simultaneously fast and effectively; And the polished surface that obtains damage is low, do not have residual polishing fluid, can satisfy the requirement of chemical polishing technology in the preparation phase-change material memory.
More than specific embodiment of the present invention is described in detail, but it is just as example, the present invention is not restricted to the specific embodiment of above description.To those skilled in the art, any equivalent modifications that the present invention is carried out with substitute also all among category of the present invention.Therefore, not breaking away from impartial conversion and the modification of being done under the spirit and scope of the present invention, all should contain within the scope of the invention.
Claims (16)
1. cmp method that polishes phase-change material and tungsten simultaneously is characterized in that: comprise following sequential steps:
Step 1: preparation contains the polishing fluid of grinding agent, oxidant, iron content ionic species;
Step 2: need the base material that phase-change material and tungsten polish simultaneously be placed on the polishing pad, the polishing fluid of preparation in the step 1 is polished phase-change material and tungsten simultaneously;
Wherein said oxidant comprises the complex salt of monopersulfate salt.
2. cmp method as claimed in claim 1 is characterized in that: the mass percent that said grinding agent accounts for polishing fluid is 0.05～25wt%.
3. cmp method as claimed in claim 2 is characterized in that: said grinding agent is selected from one or more in silicon dioxide, aluminium oxide, cerium oxide, iron oxide, silicon nitride and the titanium oxide.
4. like above-mentioned any described cmp method of claim, it is characterized in that: said oxidant comprises the composition that monopersulfate salt, disulfate and sulfate are formed.
5. cmp method as claimed in claim 4 is characterized in that: said oxidant comprises the composition that Potassium Monopersulfate, potassium acid sulfate and potassium sulfate are formed.
6. cmp method as claimed in claim 5 is characterized in that: the mol ratio of Potassium Monopersulfate, potassium acid sulfate, potassium sulfate consumption is 2～5: 1～3 in the said polishing fluid: 1～3.
7. cmp method as claimed in claim 4 is characterized in that: the mass percent that the consumption of said oxidant accounts for polishing fluid is 0.05～15wt%.
8. cmp method as claimed in claim 7 is characterized in that: the mass percent that the consumption of said oxidant accounts for polishing fluid is 1～5wt%.
9. cmp method as claimed in claim 1 is characterized in that: said iron content ionic species is selected for use and is contained the iron ion inorganic salts and/or contain iron ion organic salt.
10. cmp method as claimed in claim 9 is characterized in that: said iron content ionic species is ferric nitrate, iron chloride, ferric sulfate and/or ferric acetate.
11. cmp method as claimed in claim 10 is characterized in that: the concentration of iron content ionic species is 40～3000ppm in the said polishing fluid.
12. cmp method as claimed in claim 11 is characterized in that: the concentration of iron content ionic species is 50～2000ppm in the said polishing fluid.
13. cmp method as claimed in claim 1 is characterized in that: the pH value of said polishing fluid is 0.5～4.
14. cmp method as claimed in claim 1 is characterized in that: in the said step 2, grinding pressure is controlled at 3～6psi.
15. cmp method as claimed in claim 14 is characterized in that: in the said step 2, the grinding table rotating speed is 60-120 rev/min, and grinding head rotation rotating speed is 80-200 rev/min.
16. cmp method as claimed in claim 15 is characterized in that: in the said step 2, the polishing fluid rate of addition is 80～200 ml/min.
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| CN 201110153101 CN102820223A (en) | 2011-06-08 | 2011-06-08 | Chemical-mechanical polishing method for simultaneously polishing phase-change material and tungsten |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104745084A (en) * | 2013-12-25 | 2015-07-01 | 安集微电子（上海）有限公司 | Chemical mechanical solution for aluminum, and use method thereof |
| TWI674339B (en) * | 2017-01-23 | 2019-10-11 | 美商慧盛材料美國責任有限公司 | Etching solution for tungsten and GST films |
| CN111423819A (en) * | 2020-04-17 | 2020-07-17 | 深圳市朗纳研磨材料有限公司 | Polishing solution and preparation method thereof |
| CN111662641A (en) * | 2020-06-30 | 2020-09-15 | 中国科学院上海微系统与信息技术研究所 | High-selectivity chemical mechanical polishing solution and application thereof |
| CN112809458A (en) * | 2021-01-15 | 2021-05-18 | 金华博蓝特电子材料有限公司 | Silicon carbide wafer and method for processing same |
-
2011
- 2011-06-08 CN CN 201110153101 patent/CN102820223A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104745084A (en) * | 2013-12-25 | 2015-07-01 | 安集微电子（上海）有限公司 | Chemical mechanical solution for aluminum, and use method thereof |
| WO2015096631A1 (en) * | 2013-12-25 | 2015-07-02 | 安集微电子（上海）有限公司 | Chemical mechanical polishing slurry for aluminum and use thereof |
| TWI674339B (en) * | 2017-01-23 | 2019-10-11 | 美商慧盛材料美國責任有限公司 | Etching solution for tungsten and GST films |
| US11035044B2 (en) | 2017-01-23 | 2021-06-15 | Versum Materials Us, Llc | Etching solution for tungsten and GST films |
| CN111423819A (en) * | 2020-04-17 | 2020-07-17 | 深圳市朗纳研磨材料有限公司 | Polishing solution and preparation method thereof |
| CN111662641A (en) * | 2020-06-30 | 2020-09-15 | 中国科学院上海微系统与信息技术研究所 | High-selectivity chemical mechanical polishing solution and application thereof |
| CN111662641B (en) * | 2020-06-30 | 2021-10-26 | 中国科学院上海微系统与信息技术研究所 | High-selectivity chemical mechanical polishing solution and application thereof |
| CN112809458A (en) * | 2021-01-15 | 2021-05-18 | 金华博蓝特电子材料有限公司 | Silicon carbide wafer and method for processing same |
| CN112809458B (en) * | 2021-01-15 | 2022-05-06 | 浙江富芯微电子科技有限公司 | Silicon carbide wafer and method for processing same |
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Application publication date: 20121212 |